JP2000332259A5 - - Google Patents
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- Publication number
- JP2000332259A5 JP2000332259A5 JP2000076777A JP2000076777A JP2000332259A5 JP 2000332259 A5 JP2000332259 A5 JP 2000332259A5 JP 2000076777 A JP2000076777 A JP 2000076777A JP 2000076777 A JP2000076777 A JP 2000076777A JP 2000332259 A5 JP2000332259 A5 JP 2000332259A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000076777A JP5057605B2 (ja) | 1999-03-17 | 2000-03-17 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7281899 | 1999-03-17 | ||
| JP1999072818 | 1999-03-17 | ||
| JP11-72818 | 1999-03-17 | ||
| JP2000076777A JP5057605B2 (ja) | 1999-03-17 | 2000-03-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000332259A JP2000332259A (ja) | 2000-11-30 |
| JP2000332259A5 true JP2000332259A5 (sh) | 2007-05-24 |
| JP5057605B2 JP5057605B2 (ja) | 2012-10-24 |
Family
ID=26413955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000076777A Expired - Fee Related JP5057605B2 (ja) | 1999-03-17 | 2000-03-17 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5057605B2 (sh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6545656B1 (en) * | 1999-05-14 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame |
| WO2001059849A1 (fr) * | 2000-02-09 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | Transistor a film mince a gachette en alliage molybdene-tungstene |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| JP4737828B2 (ja) * | 2000-12-21 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57169248A (en) * | 1981-04-13 | 1982-10-18 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
| JPS60136259A (ja) * | 1983-12-24 | 1985-07-19 | Sony Corp | 電界効果型トランジスタの製造方法 |
| JPH0194664A (ja) * | 1987-10-05 | 1989-04-13 | Nec Corp | 電界効果トランジスタ |
| JPH03245533A (ja) * | 1990-02-23 | 1991-11-01 | Nec Corp | 被覆金属配線構造およびその形成方法 |
| JP3238437B2 (ja) * | 1991-09-26 | 2001-12-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH05326445A (ja) * | 1992-05-20 | 1993-12-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH0776771A (ja) * | 1993-09-08 | 1995-03-20 | Japan Energy Corp | タングステンスパッタリングターゲット |
| JP2865039B2 (ja) * | 1995-12-26 | 1999-03-08 | 日本電気株式会社 | 薄膜トランジスタ基板の製造方法 |
| JP3660474B2 (ja) * | 1997-08-04 | 2005-06-15 | 株式会社東芝 | 半導体装置の製造方法 |
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2000
- 2000-03-17 JP JP2000076777A patent/JP5057605B2/ja not_active Expired - Fee Related