JP2000332014A5 - - Google Patents

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Publication number
JP2000332014A5
JP2000332014A5 JP1999142616A JP14261699A JP2000332014A5 JP 2000332014 A5 JP2000332014 A5 JP 2000332014A5 JP 1999142616 A JP1999142616 A JP 1999142616A JP 14261699 A JP14261699 A JP 14261699A JP 2000332014 A5 JP2000332014 A5 JP 2000332014A5
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JP
Japan
Prior art keywords
substrate
nitrogen
insulating film
gas
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999142616A
Other languages
English (en)
Japanese (ja)
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JP2000332014A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11142616A priority Critical patent/JP2000332014A/ja
Priority claimed from JP11142616A external-priority patent/JP2000332014A/ja
Publication of JP2000332014A publication Critical patent/JP2000332014A/ja
Publication of JP2000332014A5 publication Critical patent/JP2000332014A5/ja
Pending legal-status Critical Current

Links

JP11142616A 1999-05-24 1999-05-24 絶縁膜 Pending JP2000332014A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11142616A JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11142616A JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Publications (2)

Publication Number Publication Date
JP2000332014A JP2000332014A (ja) 2000-11-30
JP2000332014A5 true JP2000332014A5 (2) 2004-12-09

Family

ID=15319483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11142616A Pending JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Country Status (1)

Country Link
JP (1) JP2000332014A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111538A (ja) * 2002-09-17 2004-04-08 Fujitsu Ltd 半導体装置、半導体装置の製造方法と評価方法、及びプロセス条件評価方法
KR100567530B1 (ko) * 2003-12-30 2006-04-03 주식회사 하이닉스반도체 반도체 소자의 산화막 형성 방법

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