JP2000315798A5 - - Google Patents
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- JP2000315798A5 JP2000315798A5 JP2000058493A JP2000058493A JP2000315798A5 JP 2000315798 A5 JP2000315798 A5 JP 2000315798A5 JP 2000058493 A JP2000058493 A JP 2000058493A JP 2000058493 A JP2000058493 A JP 2000058493A JP 2000315798 A5 JP2000315798 A5 JP 2000315798A5
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- JP
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000058493A JP4583540B2 (ja) | 1999-03-04 | 2000-03-03 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-57754 | 1999-03-04 | ||
| JP5775499 | 1999-03-04 | ||
| JP2000058493A JP4583540B2 (ja) | 1999-03-04 | 2000-03-03 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000315798A JP2000315798A (ja) | 2000-11-14 |
| JP2000315798A5 true JP2000315798A5 (ja) | 2007-04-26 |
| JP4583540B2 JP4583540B2 (ja) | 2010-11-17 |
Family
ID=26398826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000058493A Expired - Fee Related JP4583540B2 (ja) | 1999-03-04 | 2000-03-03 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4583540B2 (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7821065B2 (en) | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
| JP2001175198A (ja) | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US7525165B2 (en) | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| JP4739510B2 (ja) * | 2000-12-15 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP4798907B2 (ja) * | 2001-09-26 | 2011-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2003209041A (ja) * | 2002-01-15 | 2003-07-25 | Seiko Epson Corp | パターンの位置合わせ精度測定方法、パターンの形成方法、電気光学装置の製造方法、半導体装置の製造方法 |
| JP2003298069A (ja) * | 2002-01-30 | 2003-10-17 | Sanyo Electric Co Ltd | 半導体表示装置、その製造方法及びアクティブマトリクス型表示装置 |
| TWI288443B (en) | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
| TWI247180B (en) | 2004-08-06 | 2006-01-11 | Au Optronics Corp | Thin film transistor structure for flat panel display and method for fabricating the same |
| CN100459157C (zh) * | 2004-08-26 | 2009-02-04 | 友达光电股份有限公司 | 用于平面显示装置的薄膜晶体管结构及其制造方法 |
| KR100647691B1 (ko) | 2005-04-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 |
| JP2007188936A (ja) * | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | 表示装置 |
| KR102386147B1 (ko) | 2009-07-31 | 2022-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| KR101746198B1 (ko) | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
| JP5153921B2 (ja) * | 2011-06-27 | 2013-02-27 | 株式会社半導体エネルギー研究所 | 表示装置、及び携帯情報端末 |
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2000
- 2000-03-03 JP JP2000058493A patent/JP4583540B2/ja not_active Expired - Fee Related