JP2000311641A - 封止パネル装置及びその製造方法 - Google Patents
封止パネル装置及びその製造方法Info
- Publication number
- JP2000311641A JP2000311641A JP11121497A JP12149799A JP2000311641A JP 2000311641 A JP2000311641 A JP 2000311641A JP 11121497 A JP11121497 A JP 11121497A JP 12149799 A JP12149799 A JP 12149799A JP 2000311641 A JP2000311641 A JP 2000311641A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- panel
- metal material
- layer
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 165
- 238000002844 melting Methods 0.000 claims abstract description 257
- 239000007769 metal material Substances 0.000 claims abstract description 156
- 239000012790 adhesive layer Substances 0.000 claims description 601
- 230000008018 melting Effects 0.000 claims description 174
- 239000010410 layer Substances 0.000 claims description 168
- 238000007789 sealing Methods 0.000 claims description 142
- 238000000034 method Methods 0.000 claims description 112
- 239000011521 glass Substances 0.000 claims description 75
- 238000010438 heat treatment Methods 0.000 claims description 64
- 230000002093 peripheral effect Effects 0.000 claims description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 24
- 238000010304 firing Methods 0.000 claims description 17
- 238000007496 glass forming Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 42
- 230000008569 process Effects 0.000 description 32
- 230000015572 biosynthetic process Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 17
- 239000000470 constituent Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229930091051 Arenine Natural products 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 TiN Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11121497A JP2000311641A (ja) | 1999-04-28 | 1999-04-28 | 封止パネル装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11121497A JP2000311641A (ja) | 1999-04-28 | 1999-04-28 | 封止パネル装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000311641A true JP2000311641A (ja) | 2000-11-07 |
| JP2000311641A5 JP2000311641A5 (enrdf_load_stackoverflow) | 2006-03-23 |
Family
ID=14812651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11121497A Pending JP2000311641A (ja) | 1999-04-28 | 1999-04-28 | 封止パネル装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000311641A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001054161A1 (fr) * | 2000-01-24 | 2001-07-26 | Kabushiki Kaisha Toshiba | Dispositif d'affichage, procede de fabrication correspondant et appareil d'alimentation en materiau d'etancheite |
| JP3411020B2 (ja) | 2000-12-28 | 2003-05-26 | 株式会社東芝 | 画像表示装置の製造方法 |
| WO2004064102A1 (ja) * | 2003-01-10 | 2004-07-29 | Kabushiki Kaisha Toshiba | 画像表示装置およびその製造方法 |
| WO2004109740A1 (ja) * | 2003-06-04 | 2004-12-16 | Kabushiki Kaisha Toshiba | 画像表示装置およびその製造方法 |
| WO2005064638A1 (ja) * | 2003-12-25 | 2005-07-14 | Kabushiki Kaisha Toshiba | 平面型の画像表示装置 |
| CN1322529C (zh) * | 2003-09-10 | 2007-06-20 | 佳能株式会社 | 气密容器及图像显示装置 |
| WO2007111072A1 (ja) * | 2006-03-29 | 2007-10-04 | Hamamatsu Photonics K.K. | 光電変換デバイスの製造方法 |
| KR100846703B1 (ko) * | 2001-10-15 | 2008-07-16 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치, 평판 디스플레이장치용 사이드 바및 이의 제작방법 |
| JP2009032585A (ja) * | 2007-07-27 | 2009-02-12 | Futaba Corp | 集束型電界放出カソードと電界放出型表示装置 |
-
1999
- 1999-04-28 JP JP11121497A patent/JP2000311641A/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294034B2 (en) | 2000-01-24 | 2007-11-13 | Kabushiki Kaisha Toshiba | Image display apparatus, method of manufacturing the same, and sealing-material applying device |
| WO2001054161A1 (fr) * | 2000-01-24 | 2001-07-26 | Kabushiki Kaisha Toshiba | Dispositif d'affichage, procede de fabrication correspondant et appareil d'alimentation en materiau d'etancheite |
| JP3411020B2 (ja) | 2000-12-28 | 2003-05-26 | 株式会社東芝 | 画像表示装置の製造方法 |
| KR100846703B1 (ko) * | 2001-10-15 | 2008-07-16 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치, 평판 디스플레이장치용 사이드 바및 이의 제작방법 |
| WO2004064102A1 (ja) * | 2003-01-10 | 2004-07-29 | Kabushiki Kaisha Toshiba | 画像表示装置およびその製造方法 |
| KR100701112B1 (ko) * | 2003-01-10 | 2007-03-29 | 가부시끼가이샤 도시바 | 화상 표시 장치 및 그 제조 방법 |
| WO2004109740A1 (ja) * | 2003-06-04 | 2004-12-16 | Kabushiki Kaisha Toshiba | 画像表示装置およびその製造方法 |
| KR100759136B1 (ko) * | 2003-06-04 | 2007-09-14 | 가부시끼가이샤 도시바 | 화상 표시 장치 및 그 제조 방법 |
| CN1322529C (zh) * | 2003-09-10 | 2007-06-20 | 佳能株式会社 | 气密容器及图像显示装置 |
| WO2005064638A1 (ja) * | 2003-12-25 | 2005-07-14 | Kabushiki Kaisha Toshiba | 平面型の画像表示装置 |
| WO2007111072A1 (ja) * | 2006-03-29 | 2007-10-04 | Hamamatsu Photonics K.K. | 光電変換デバイスの製造方法 |
| US7867807B2 (en) | 2006-03-29 | 2011-01-11 | Hamamatsu Photonics K.K. | Method for manufacturing photoelectric converting device |
| EP2001037A4 (en) * | 2006-03-29 | 2012-05-09 | Hamamatsu Photonics Kk | METHOD OF MANUFACTURING A PHOTOELECTRIC CONVERSION DEVICE |
| JP4939530B2 (ja) * | 2006-03-29 | 2012-05-30 | 浜松ホトニクス株式会社 | 光電変換デバイスの製造方法 |
| JP2009032585A (ja) * | 2007-07-27 | 2009-02-12 | Futaba Corp | 集束型電界放出カソードと電界放出型表示装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060206 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060206 |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080422 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080812 |