JP2000286366A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device where the side face of a board included in an IC package is restrained from exposing on the side face of a discrete IC package and glass fiber jutting out of the side of a board is restrained from protruding from the outline of the IC package. SOLUTION: Slits are provided beforehand around a region of a board before dividing into discrete pieces penetrating through the board and corresponding to the outline of an IC package 5 so as to cover the side of a board 20 comprises in the IC package 5 with molding resin 4. When resin sealing is carried out, molding resin 4 is filled into the slits, by which the cut surface or side face of the board is covered with the molding resin 4. When the plane outline of the molding resin 4 corresponds to the plane outline of the IC package 5 or the outline of the slits, the board is cut out along the outline of the slits after resin sealing so carried out, by which the board can be divided into discrete IC packages without cutting off the molding resin 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to a semiconductor device assembled by performing resin sealing on a glass epoxy substrate such as a ball grid array type, a polyimide substrate, or the like. Process)
The present invention relates to a semiconductor device capable of realizing an improvement in quality and an improvement in positioning accuracy in an electric test process and board mounting.

[0002]

2. Description of the Related Art In the prior art, as shown in FIG. 15, an IC chip 101 is mounted on a substrate 102 represented by glass epoxy and connected by wires 103.
IC package 105 sealed with mold resin 104
Thereafter, the semiconductor device is manufactured by being separated into a single unit, and the cut surface is exposed on the outer peripheral side surface of the substrate which is separated into the single unit. In the figure, reference numeral 10
Reference numeral 6 denotes a ball terminal arranged and formed on the back surface of the substrate 102.

FIG. 16 is a perspective view of the conventional semiconductor device shown in FIG. As shown in this figure, since the glass fibers 107 included in the substrate 102 are frayed from the exposed cut surface of the substrate 102 constituting the IC package 105, the operations such as 100% inspection and reworking are performed at the manufacturing site. In some cases, a load is imposed, which causes problems such as an increase in manufacturing cost and an increase in manufacturing period.

If the cut surface of the substrate 102 is not good due to abrasion of parts of the cutting mold, the edge of the substrate 102 may be partially dropped off or partially cut off. Problems such as an increase in dimensional variation have occurred. If the unevenness of the cut surface of the substrate 102 becomes large, the positioning accuracy may decrease in a test process for positioning based on the cut surface or a process for mounting components or the like on the substrate 102, and a positional deviation defect may occur. Was.

[0005] In addition, Japanese Patent Application Laid-Open No. 8-64 shows a conventional technique.
Japanese Patent No. 718 discloses that when a plurality of individualized semiconductor devices are obtained from a series of substrates, the substrate is preliminarily placed in a region of the series of substrates excluding the corners of the four sides constituting the outer periphery of the IC package. A technique is disclosed in which a penetrating slit is provided, and in a subsequent singulation step, one semiconductor device can be cut out from a continuous substrate by punching out only corner portions. Note that the outer peripheral side surface of the substrate constituting the singulated semiconductor device obtained by this technique is exposed. Therefore, when the substrate contains glass fiber, there is a concern that the glass fiber is frayed from the cut surface and pops out, which may cause inconvenience.

[0006]

SUMMARY OF THE INVENTION In view of the above background, the present invention is directed to a semiconductor device capable of preventing fraying of glass fibers from an outer peripheral side surface of an exposed substrate, and fluctuation and deterioration of a cut surface. Provide structural technology,
It eliminates the need for 100% inspection, rework, etc., and achieves stable operation of the manufacturing equipment by stabilizing the position accuracy in the process of positioning on the board end surface (corresponding to the outer periphery of the board). It is an object of the present invention to provide a technique relating to a method for manufacturing a semiconductor device capable of obtaining an inexpensive and high-quality semiconductor device by reducing the amount.

[0007]

A semiconductor device according to the present invention comprises a substrate, an IC chip mounted on the substrate and connected by wires, and a mold resin for resin-sealing the IC chip and the wires to the substrate. And a side surface of the substrate is covered with the mold resin.

Further, the semiconductor device according to the present invention has a structure as described above, wherein the mold resin surrounds the side surface of the substrate and is formed of a mold resin projecting outside the outer periphery of the substrate corresponding to the position of the side surface of the substrate. It has a brim section.

Further, in the semiconductor device according to the present invention, in the above-described configuration, a substrate suspending portion protruding from a substrate constituting an IC package is disposed on the collar portion, and the substrate suspending portion is provided on the substrate. And a series of members.

Further, in the semiconductor device according to the present invention, in the above-described configuration, a region of the side surface of the substrate which is not covered with the mold resin is processed by a laser beam.

Further, in the semiconductor device according to the present invention, in the above configuration, the outer side of the side surface of the IC package is surrounded by a width from the side surface of the substrate so as to be parallel to the side surface of the substrate. A first side surface, and a second side surface cut from the outer periphery of the upper end of the first surface toward the outer periphery of the upper surface of the IC package, the upper surface and the side surface of the IC package are formed by the surface of the mold resin. It is configured.

Further, in the semiconductor device according to the present invention, in the above configuration, the outline of the planar shape of the mold resin corresponds to the outline of the planar shape of the IC package.

Further, in the method of manufacturing a semiconductor device according to the present invention, the width of a continuous substrate is reduced from a position corresponding to at least the outline of a planar shape of an IC package to be obtained, except for a portion left as a substrate suspension. Forming a slit toward the center of the planar shape, placing an IC chip on the upper surface of the substrate used as the package and connecting with a wire, mounting the IC chip, The method includes a step of sealing the substrate to be processed in a manufacturing process with a resin, filling the slit with a mold resin, and covering a side surface of the substrate with the mold resin.

Further, in the method of manufacturing a semiconductor device according to the present invention, in the above-described manufacturing method, when the region surrounded by the outer contour of the slit corresponds to the planar shape of the IC package, the resin is sealed with the outer contour of the slit. Punching along the substrate, and cutting the substrate suspension at the same time.
This includes a step of separating the C package.

Further, in the method of manufacturing a semiconductor device according to the present invention, in the above-described manufacturing method, when the region surrounded by the outer contour of the slit corresponds to the planar shape of the IC package, the semiconductor device is processed by a laser beam after resin sealing. And cutting the substrate hanging portion along the outer contour of the slit to singulate the IC package.

Further, in the method of manufacturing a semiconductor device according to the present invention, in the above-described manufacturing method, when the region surrounded by the outer contour of the slit surrounds the planar outer contour of the IC package and is formed wider, While the side surface of the substrate constituting the package is kept covered with the mold resin, cutting is performed on the mold resin filled in the slit and positioned on the slit along the outer periphery of the IC package. At the same time, the IC package is divided into individual pieces by cutting the substrate hanging portions left unopened as the slits.

Further, in the method of manufacturing a semiconductor device according to the present invention, there is provided a step of forming a slit having a further expansion including the planar shape of the IC package on the substrate, wherein the IC chip mounted on the substrate is connected to the substrate by wires. A process in which a mold having a shape corresponding to the IC package abuts in the slit with the substrate to be processed connected to the substrate and performs resin sealing, and covers a side surface of the substrate with a mold resin; Is removed from the substrate to be processed, and while the side surface of the substrate is kept covered with the mold resin, the substrate hanging portion left without being opened as the slit is cut along the outer periphery of the mold resin. And a step of dividing the IC package into individual pieces.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 Next, Embodiment 1 of the present invention will be described. FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention. In this figure, reference numeral 1 denotes an IC chip, and this IC chip 1 is mounted on a glass epoxy substrate 2a, and both are connected by wires 3. Furthermore, the mold resin 4
The surfaces of the IC chip 1 and the wires 3 and the upper and side surfaces (cut surfaces) of the glass epoxy substrate 2a are covered with resin, and are sealed with a resin.
Is configured. A brim portion 4a made of a mold resin 4 is formed on the outer periphery of the IC package 5, and a ball terminal 6 is arranged and formed on the back surface of the glass epoxy substrate 2a.

FIG. 2 is a perspective view of an IC package 5 having a sectional structure as shown in FIG. In this figure, the collar 4
The portion indicated by reference numeral 2b is a substrate hanging portion which is continuous with the glass epoxy substrate 2a and is made of the same material, and should be discarded before the IC package 5 is divided into individual pieces. It is necessary for connection with other substrate regions. In addition, the same reference numerals as those already described indicate the same or corresponding parts.

As shown in FIGS. 1 and 2, when the IC package 5 is singulated, the cut surface of the glass epoxy substrate 2a is hardly exposed and is covered with the mold resin 4. Glass fiber does not protrude from the side of the substrate.

Next, a method for manufacturing the above semiconductor device will be described. First, a plan shape of a glass epoxy substrate used for manufacturing the semiconductor device will be described with reference to FIG. At a stage before the IC package 5 is separated into individual pieces, the continuous glass epoxy substrate 2 includes a region 2a used as a component of the IC package 5,
A region indicated by reference numeral 2c to be discarded and a substrate hanging portion 2b connecting the two are formed, and the outer periphery of the region indicated by 2a is surrounded by a slit 7 penetrating the glass epoxy substrate 2. .

The width of the opening of the slit 7 ranges from the end of the flange 4a of the mold resin 4 in the sectional view of FIG. 1 to the cut of the glass epoxy substrate 2a used as a component of the IC package 5. Is a dimension corresponding to the distance of The end face of the opening groove of the slit 7 on the side of the glass epoxy substrate 2c to be discarded corresponds to the outer periphery of the product outer shape of the semiconductor device.

The IC chip 2 is mounted on the upper surface of the continuous glass epoxy substrate 2 and connected to the glass epoxy substrate 2 using the wires 3 (not shown). Next, as shown in a plan view of FIG. 4, the IC chip 2 and the wires 3 and the upper surface and side surfaces of the glass epoxy substrate 2a are resin-sealed using a mold resin 4.

As shown in FIG. 5 which is an enlarged plan view of a corner portion of the IC package 5, a portion to be the flange portion 4a of the mold resin 4 can be formed by filling the slit 7 with the mold resin 4. FIG. 6 is an enlarged sectional view of a corner portion of the IC package 5 corresponding to FIG.

Next, as shown in FIGS. 7 and 8, an IC is cut from the continuous glass epoxy substrate 2 by a cut punch.
The packages 5 are punched out one by one and separated to perform individualization. First, as shown in FIG. 7, an IC package 5 to be separated into individual pieces by a substrate holder 8 and a die cut 9 is fixed.
The setting is performed so that the pressed portion of the cut punch 10 faces one surface of the glass epoxy substrate 2c to be thrown away.

Next, the cut punch 10 is moved along the cutting direction indicated by the reference numeral 10a, and the IC package 5 is punched out of the continuous glass epoxy substrate 2 and singulated.
Note that, by this punching, the side surface corresponding to the outer periphery of the product outer shape of the flange portion 4a that has been in contact with the opening groove of the slit 7 is exposed without cutting the mold resin 4.

The substrate suspending portion 2b is provided with a cut punch 10
Is cut at a position corresponding to the outer periphery of the outer shape of the product, but is required for connection with another substrate area.
It can be seen that the formation area is small, and even if the cut surface is exposed by punching, the adverse effect due to the projection of the glass fiber from the cut surface is extremely small as compared with the case where the entire side surface of the substrate is exposed.

Thereafter, by arranging and forming the ball terminals 6 on the back surface of the glass epoxy substrate 2a constituting the IC package 5, a semiconductor device having a sectional structure as shown in FIG. 1 can be obtained.

As described above, by forming a structure in which the side surface of the glass epoxy substrate 2a constituting the IC package 5 is covered with the mold resin 4, it is possible to suppress the projection of the glass fiber from the outer peripheral side surface of the obtained semiconductor device. It is possible, and the work load on the manufacturing site can be reduced.

Furthermore, since the outer shape of the product is determined by the opening groove of the slit 7, it is possible to suppress variations in the external dimensions of the product.
The ball terminals 6 positioned by the outer periphery of the product can be accurately arranged and formed. In addition, at the time of singulation, there is no need to cut the mold resin or glass epoxy substrate along the outline of the product's plane shape,
By punching out the IC package 5 from the continuous glass epoxy substrate 2 along the outline of the opening groove of the slit 7, it is possible to relatively easily separate the IC package 5 into individual pieces.

In the above example, the board suspension 2
Although b shows the case where eight IC packages 5 are provided and two ICs are provided on one side, one IC package 5 may be provided at each corner of the IC package 5 having a square planar shape. May be arranged and number. When the substrate hanging portion 2b is provided at the corner of the IC package 5, the shape of the cut punch 10 can be adjusted so that the corner of the product can be chamfered. Also, in the example shown in the drawings, since the corner of the IC package 5 reflects the outer shape of the slit 7, the slit is previously formed so that the product corner of the slit 7 is rounded. It is also possible to adjust when opening 7. Further, in the above-described example, the example in which the epoxy resin substrate 2a is used as the substrate constituting the IC package 5 has been described. However, a substrate made of another material, for example, a polyimide substrate may be used. The same can be said for the second and subsequent examples described below.

Second Embodiment Next, a second embodiment of the present invention will be described. In the first embodiment, the substrate hanging portion 2b serving as a connection portion between the glass epoxy substrate 2a used as a component of the product and the glass epoxy substrate 2c to be discarded is formed by a cut punch at the time of individualizing the product. The example performed by punching was shown. In the second embodiment, a case will be described in which the substrate hanging portion 2b is cut using a laser beam to singulate products.

FIG. 9 shows a state in which the IC package 5 before singulation is formed on a continuous glass epoxy substrate 2, and reference numeral 10 b attached to the drawing denotes the outer periphery of the IC package 5. 2 shows the direction of irradiation of the laser beam to be applied to the substrate suspension 2b located at the flange 4a. Along the laser beam irradiation direction 10b, a laser beam having a wavelength capable of cutting the glass epoxy substrate is applied to the substrate hanging portion 2, and separated from the glass epoxy substrate 2c to be discarded. by this,
As shown in FIG. 10, the portion where the substrate suspension portion 2b is formed becomes the laser cutting portion 2bb.

As described above, after the cutting process using the laser beam is performed on the substrate hanging portion 2b, the IC package 5 is still fitted in the slit 7, so that the suction head (not shown) Alternatively, by applying an external force using a mold or the like and removing the external force from the glass epoxy substrate 2, individualization can be performed.

As described above, when laser processing is performed locally, and when the resin portion is not processed, soot (carbon) generated at the time of processing is minimized. Can be suppressed, the laser energy can be minimized, and the running cost can be reduced.

Third Embodiment Next, FIG. 11 shows a sectional view of a semiconductor device according to a third embodiment. In the above-described first and second embodiments, the brim portion 4a made of the mold resin 4 is formed in the IC package 5, but the brim portion 4a is formed in the IC package 5a of the third embodiment. Not formed.

The IC package 5 is manufactured according to the manufacturing method described in the first or second embodiment.
Then, only the flange portion 4a is cut, and the ball terminals 6 are arranged and formed on the back surface of the glass epoxy substrate 2a to obtain the semiconductor device having the structure shown in FIG.

As described above, by obtaining the semiconductor device in which the flange portion 4a is not formed, the cut surface of the glass epoxy substrate 2a shown in the first and second embodiments is covered with the mold resin 4 so that the glass It is possible to suppress the fiber from jumping out, and furthermore, the brim portion 4a
It is possible to further reduce the external dimensions of the product as compared with the case where the device is provided.

Further, the cutting of the brim portion 4a may be performed in a step before the singulation or after the singulation. further,
The ball terminals 6 can be arranged and formed in any of the steps before and after the cutting of the flange portion 4a. Furthermore, regarding the cutting method, a method using a dicing saw,
There is a method of irradiating a laser beam or the like. When the collar portion 4a is cut by irradiating a laser beam, it is generated by spraying air during treatment or supplying a liquid such as water to the processing portion. Needless to say, it is possible to suppress soot and the like from adhering to the processing surface, and it is also possible to clean the processing surface by performing a chemical polishing process after the cutting process.

Embodiment 4 Next, Embodiment 4 of the present invention will be described. The semiconductor device manufactured according to the fourth embodiment has the same cross-sectional structure as that according to the third embodiment shown in FIG. 11, and is characterized by its manufacturing process. In the third embodiment, the method of cutting the brim portion 4a made of the mold resin 4 once formed has been described. In the fourth embodiment, a description will be given of a manufacturing method in which a portion corresponding to the flange portion 4a is not formed from the beginning.

First, a glass epoxy substrate 2 similar to that shown in FIG. 3 is prepared. Thereafter, resin sealing is performed using a mold. At this time, the mold used is from the upper end of the opening groove of the slit 7 in the boundary region of the glass epoxy substrate 2c to be discarded between the semiconductor devices arranged adjacent to the outer periphery of the upper surface of the IC package 5a. When the resin is sealed using this mold, the IC package 5a having no flange 4a can be obtained. FIG. 12A is a cross-sectional view of the structure after resin sealing.

FIG. 12A is a diagram showing a cross-sectional structure obtained when a mold and a substrate to be processed in a manufacturing process are in contact with each other without displacement. The structure is as shown in FIG. FIG.
2 (b) shows a case where the displacement width is x. Also in this case, when the shift width x is smaller than the opening width of the slit 7, the surface and the cross section of the glass epoxy substrate 2a are not exposed, and the glass fibers do not jump out of the cross section of the glass epoxy substrate 2a. Work load does not increase.

Fifth Embodiment Next, a fifth embodiment of the present invention will be described. In the first to fourth embodiments, when a plurality of IC packages are continuously arranged on the continuous glass epoxy substrate 2, a portion of the glass epoxy substrate 2c that is to be discarded between adjacent IC packages.
Although the example in which is provided is described, a case will be described in the method of manufacturing a semiconductor device according to the fifth embodiment where the substrate area to be discarded is suppressed to be smaller and the substrate can be effectively used.

FIG. 13 (a) shows a cross-sectional structure of a semiconductor device according to the fifth embodiment in a manufacturing process, which shows a stage before the individualization. As shown in FIG. 13A, a slit having a slit width S1 is provided between the glass epoxy substrates 2a constituting two adjacent semiconductor devices, and the center of the slit width S1 (indicated by a chain line). Is cut using a dicing saw or a laser beam, so that individualized IC packages 5a can be obtained. In this case, FIG.
As shown in (a), the manufacturing is performed using a molding die capable of forming a narrow groove in a region corresponding to the outline of the planar shape of the IC package 5a of the molding resin 4. By setting the slit width S1 to be smaller, the substrate area can be more effectively used.

In addition, as shown in FIG. 13 (b), a structure having a flange portion 4a using a different mold may be used. Also in this case, since the cutting is performed in the area indicated by the dashed line, the area where the substrate is thrown away can be minimized. Further, the smaller the thickness of the mold resin 4 at the portion to be cut, the easier it is to cut when individualizing.

In this case, the resin sealing is performed by centering on the position indicated by the dashed line in the area indicated by the slit width S2.
Manufacturing is performed using a mold that can form a groove having a bottom corresponding to twice the width of the flange portion 4a of the IC package 5a. By setting the width of the slit width S2 to be smaller and the width of the flange portion 4a to be smaller, it is possible to further effectively use the substrate area.

Embodiment 6 Next, Embodiment 6 of the present invention will be described. In the sixth embodiment,
An IC package 5a having a sectional structure shown in FIG.
An example in which the area of the glass epoxy substrate 2c to be discarded is made as small as possible and the substrate area is effectively used will be described.
The sixth embodiment is characterized in that resin sealing is performed in a state where the mold dies abut each other in a slit 7 opened in the glass epoxy substrate 2.

FIG. 14 (a) shows a case where the substrate 12 is placed on a mold 11b used for resin-sealing the substrate 12 in a manufacturing process before the resin sealing is performed. FIG. Thereafter, as shown in FIG. 14B, the mold die 11a is brought into contact with the upper surface of the mold die 11b in the opening groove of the slit 7, and the mold resin 4 is injected and resin-sealed to be separated. An IC package 5a with no state is obtained.

FIG. 14C shows a plan view after resin sealing is performed. There is no glass epoxy substrate 2c to be thrown away between adjacent IC packages 5a.
This is a state in which the mold resin 4 has been cut off in the area where the slit 7 is formed, and there is no need to cut the mold resin in a later step, and it is possible to singulate just by cutting the substrate hanging part 2b.

Further, as shown in FIG. 14D, the width of the slit 7 can be further reduced by minimizing the abutting area between the upper and lower mold dies 11a and 11b. The area of the glass epoxy substrate 2 can be used effectively. FIG. 14 (c)
In the above, an example is shown in which a plurality of IC packages 5a are arranged in one direction. However, as shown in FIG. 14D, a plurality of IC packages 5a can be arranged on the left, right, up and down from a reference position of the substrate. Needless to say.

However, in any case, the mold 11a has a groove formed in the area where the substrate suspension 2b is disposed so that the substrate suspension 2b is released.

[0052]

According to the present invention, since the side surface of the substrate constituting the semiconductor device has a structure covered with the mold resin, even if the glass fiber is frayed from the side surface of the substrate and pops out, the product of the product can be obtained. The glass fibers do not protrude from the surface, and do not adversely affect the workability at the manufacturing site.

Further, according to the present invention, a slit is formed on a continuous glass epoxy substrate in advance with a width opening from a position corresponding to the outline of the planar shape of the IC package toward the center of the IC package. Then, by filling the slit with a mold resin at the stage of performing resin sealing, the side surface of the glass epoxy substrate in an area used as an IC package is covered with the mold resin.
By punching along the outer contour of the slit corresponding to the outer contour of the planar shape of the C package, the IC package can be cut only by cutting the mold resin and cutting the remaining portion without opening the slit as a substrate hanging portion. Can be singulated.

Further, according to the present invention, the outline of the planar shape of the IC package matches the shape of the outline of the slit,
Since the outline of the mold resin filled in the slit matches the outline of the planar shape of the IC package, it is possible to suppress variations in the external shape of the obtained IC package, and it is possible to arrange and form the ball terminals with high precision.

Further, according to the present invention, the portion of the glass epoxy substrate which is left without opening a slit as a substrate suspension portion is cut by a laser beam at a position corresponding to the outline of the planar shape of the IC package. Thus, it is possible to prevent the glass fiber from flying out from the laser processing surface due to fraying.

Further, the brim portion made of the mold resin filled in the slit is cut while keeping the side surface of the glass epoxy substrate constituting the IC package covered with the mold resin, thereby cutting the IC package. It is possible to reduce the external dimensions of the device.

According to the present invention, the outline of the planar shape of the IC package is located in the slit formed in the continuous glass epoxy substrate, and the resin package is sealed.
By cutting the mold resin along the outline of the planar shape of the package, individualization of the IC package becomes possible. By reducing the opening width of the slit, the margin for discarding the glass epoxy substrate is reduced, and the substrate area can be effectively used.

Further, according to the present invention, a mold formed at the time of resin sealing is brought into abutment in a slit formed in a continuous glass epoxy substrate,
After removing the mold after resin encapsulation, simply cut the substrate hanging part and cut the IC without cutting the mold resin.
It becomes possible to singulate the package. By reducing the opening width of the slit, the margin for discarding the glass epoxy substrate is reduced, and the substrate area can be effectively used.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a perspective view of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a plan view showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 4 is a plan view showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 5 is a plan view showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 6 is a sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 7 is a sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 8 is a sectional view illustrating a manufacturing process of the semiconductor device according to the first embodiment of the present invention;

FIG. 9 is a sectional view illustrating a manufacturing process of the semiconductor device according to the second embodiment of the present invention;

FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor device according to the second embodiment of the present invention;

FIG. 11 is a diagram illustrating a cross section of a semiconductor device according to a third embodiment of the present invention;

FIG. 12 is a cross-sectional view showing a process of manufacturing the semiconductor device according to Embodiment 4 of the present invention;

FIG. 13 is a sectional view illustrating a manufacturing process of the semiconductor device according to the fifth embodiment of the present invention;

FIG. 14 is a view illustrating a process of manufacturing the semiconductor device according to the sixth embodiment of the present invention;

FIG. 15 is a diagram showing a cross section of a semiconductor device according to a conventional technique.

FIG. 16 is a perspective view of a semiconductor device according to a conventional technique.

[Explanation of symbols]

1. IC chip 2, 2a, 2c. Glass epoxy board 2b. Board hanging part 2bb. Laser cutting part 3. Wire 4. Mold resin 4a. Collar part, 4b. Package end part 5, 5a. IC package 6. Ball terminal , 7.
Slit 8. Substrate holder 9. Die cut 10. Cut punch, 10a. Cut direction 10b. Laser beam irradiation direction, 11a, 11b. Mold 12. Substrate to be processed.

Claims (11)

[Claims] 1. A substrate comprising: a substrate; an IC chip mounted on the substrate and connected by wires; and a mold resin for sealing the IC chip and the wires to the substrate.
A semiconductor device comprising a C package, wherein a side surface of the substrate is covered with the mold resin. 2. A flange portion surrounding a side surface of the substrate and formed of a mold resin projecting outside the outer periphery of the substrate corresponding to the position of the side surface of the substrate. 13. The semiconductor device according to claim 1. 3. A bridging portion is provided with a substrate suspending portion projecting from a substrate constituting the IC package, and the substrate suspending portion is constituted by a continuous member with the substrate. The semiconductor device according to claim 2. 4. The semiconductor device according to claim 1, wherein a region of the side surface of the substrate which is not covered with the mold resin is processed by a laser beam. 5. An outer periphery of a side surface of the IC package, the first side surface having a width from the side surface of the substrate so as to be parallel to the side surface of the substrate, and an outer periphery of an upper end of the first side surface. 2. The IC package according to claim 1, wherein the IC package includes a second side surface that is cut toward an outer periphery of an upper surface of the IC package, and the upper surface and the side surface of the IC package are configured by a surface of a mold resin. Semiconductor device. 6. The semiconductor device according to claim 1, wherein the outline of the planar shape of the mold resin corresponds to the outline of the planar shape of the IC package. 7. With respect to a series of substrates, a width extends toward a center of the planar shape from a position corresponding to at least an outline of a planar shape of an IC package to be obtained, except for a portion to be left as a substrate suspending portion. Forming an opening to form a slit, placing an IC chip on the upper surface of the substrate used as the package and connecting with a wire, and treating the IC chip in a manufacturing process in which the IC chip is mounted and becomes the IC package. A method of manufacturing a semiconductor device, comprising: sealing a substrate with a resin, filling the slit with a mold resin at the same time, and covering a side surface of the substrate with the mold resin. 8. When the area surrounded by the outer contour of the slit corresponds to the planar shape of the IC package, after sealing with a resin, punching is performed along the outer contour of the slit, and the substrate suspending portion is cut at the same time. 8. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of dividing the semiconductor device into individual pieces. 9. When the region surrounded by the outer contour of the slit corresponds to the planar shape of the IC package, the substrate suspension is cut by laser beam processing after resin sealing,
8. The method of manufacturing a semiconductor device according to claim 7, further comprising the step of separating the IC package into individual pieces by removing the package along the outer periphery of the slit. 10. A region surrounded by the outline of the slit surrounds the outline of the planar shape of the IC package, and when the region is formed wider, the side surface of the substrate constituting the IC package is kept covered with the mold resin. Along the outer periphery of the IC package, cutting is performed on the mold resin filled in the slit and located on the slit, and at the same time, the substrate suspending portion left without being opened as the slit is also cut. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the IC package is divided into individual pieces. 11. A step of forming a slit having a further expansion including the planar shape of the IC package on the substrate, wherein the IC chip mounted on the substrate is connected to the substrate to be processed connected to the substrate by wires. A step in which a mold having a shape corresponding to the IC package is abutted in the slit to perform resin sealing, and covering a side surface of the substrate with a mold resin; removing the mold from the substrate to be processed; Cutting the IC package into individual pieces by cutting along the outer periphery of the mold resin the substrate hanging portion left without being opened as the slit while keeping the side surface of the IC package covered with the mold resin. A method for manufacturing a semiconductor device, comprising: