JP2000277852A - 表面発光型半導体レーザ、及びその製造方法 - Google Patents
表面発光型半導体レーザ、及びその製造方法Info
- Publication number
- JP2000277852A JP2000277852A JP11079670A JP7967099A JP2000277852A JP 2000277852 A JP2000277852 A JP 2000277852A JP 11079670 A JP11079670 A JP 11079670A JP 7967099 A JP7967099 A JP 7967099A JP 2000277852 A JP2000277852 A JP 2000277852A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- mirror
- surface emitting
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims description 28
- 238000002310 reflectometry Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 21
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 19
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical group [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical group [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 239000012071 phase Substances 0.000 description 46
- 230000000903 blocking effect Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 21
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011701 zinc Substances 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079670A JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079670A JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000277852A true JP2000277852A (ja) | 2000-10-06 |
| JP2000277852A5 JP2000277852A5 (enrdf_load_stackoverflow) | 2004-09-09 |
Family
ID=13696628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11079670A Pending JP2000277852A (ja) | 1999-03-24 | 1999-03-24 | 表面発光型半導体レーザ、及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000277852A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004529487A (ja) * | 2000-11-28 | 2004-09-24 | ハネウェル・インターナショナル・インコーポレーテッド | 単一モードｖｃｓｅｌ用の多機能方法およびシステム |
| JP2006114915A (ja) * | 2004-10-14 | 2006-04-27 | Samsung Electronics Co Ltd | ファンネル構造のｖｅｃｓｅｌ |
| JP2007201398A (ja) * | 2005-07-04 | 2007-08-09 | Sony Corp | 面発光型半導体レーザ |
| JP2010040605A (ja) * | 2008-07-31 | 2010-02-18 | Canon Inc | 面発光レーザおよびその製造方法、面発光レーザアレイ、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| WO2011034194A1 (en) * | 2009-09-18 | 2011-03-24 | Ricoh Company, Ltd. | Surface-emitting laser, surface-emitting laser array, optical scanning apparatus, and image forming apparatus |
| JP2014086565A (ja) * | 2012-10-24 | 2014-05-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| JP2017163140A (ja) * | 2016-03-07 | 2017-09-14 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | 発光素子 |
| EP3244497A1 (en) | 2016-04-18 | 2017-11-15 | Stanley Electric Co., Ltd. | Vertical cavity light-emitting element and method for manufacturing the same |
| JP7103552B1 (ja) * | 2022-01-27 | 2022-07-20 | 三菱電機株式会社 | 光半導体装置 |
-
1999
- 1999-03-24 JP JP11079670A patent/JP2000277852A/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004529487A (ja) * | 2000-11-28 | 2004-09-24 | ハネウェル・インターナショナル・インコーポレーテッド | 単一モードｖｃｓｅｌ用の多機能方法およびシステム |
| JP2006114915A (ja) * | 2004-10-14 | 2006-04-27 | Samsung Electronics Co Ltd | ファンネル構造のｖｅｃｓｅｌ |
| US8385381B2 (en) | 2005-07-04 | 2013-02-26 | Sony Corporation | Vertical cavity surface emitting laser |
| JP2007201398A (ja) * | 2005-07-04 | 2007-08-09 | Sony Corp | 面発光型半導体レーザ |
| JP2010040605A (ja) * | 2008-07-31 | 2010-02-18 | Canon Inc | 面発光レーザおよびその製造方法、面発光レーザアレイ、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| US8624950B2 (en) | 2009-09-18 | 2014-01-07 | Ricoh Company, Ltd. | Surface-emitting laser comprising emission region having peripheral portion with anisotropy in two perpendicular directions, and surface-emitting laser array, optical scanning apparatus and image forming apparatus including the same |
| WO2011034194A1 (en) * | 2009-09-18 | 2011-03-24 | Ricoh Company, Ltd. | Surface-emitting laser, surface-emitting laser array, optical scanning apparatus, and image forming apparatus |
| JP2014086565A (ja) * | 2012-10-24 | 2014-05-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| JP2017163140A (ja) * | 2016-03-07 | 2017-09-14 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | 発光素子 |
| JP7068772B2 (ja) | 2016-03-07 | 2022-05-17 | 晶元光電股▲ふん▼有限公司 | 発光素子 |
| JP2022093631A (ja) * | 2016-03-07 | 2022-06-23 | 晶元光電股▲ふん▼有限公司 | 発光素子 |
| EP3244497A1 (en) | 2016-04-18 | 2017-11-15 | Stanley Electric Co., Ltd. | Vertical cavity light-emitting element and method for manufacturing the same |
| US9935427B2 (en) | 2016-04-18 | 2018-04-03 | Stanley Electric Co., Ltd. | Vertical cavity light-emitting element and method for manufacturing the same |
| JP7103552B1 (ja) * | 2022-01-27 | 2022-07-20 | 三菱電機株式会社 | 光半導体装置 |
| WO2023144960A1 (ja) * | 2022-01-27 | 2023-08-03 | 三菱電機株式会社 | 光半導体装置 |
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Legal Events
| Date | Code | Title | Description |
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| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
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