JP2000269512A5 - - Google Patents
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- JP2000269512A5 JP2000269512A5 JP2000002622A JP2000002622A JP2000269512A5 JP 2000269512 A5 JP2000269512 A5 JP 2000269512A5 JP 2000002622 A JP2000002622 A JP 2000002622A JP 2000002622 A JP2000002622 A JP 2000002622A JP 2000269512 A5 JP2000269512 A5 JP 2000269512A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002622A JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999004761 | 1999-01-11 | ||
| JP476199 | 1999-01-11 | ||
| JP11-4761 | 1999-01-11 | ||
| JP2000002622A JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000269512A JP2000269512A (ja) | 2000-09-29 |
| JP2000269512A5 true JP2000269512A5 (enrdf_load_stackoverflow) | 2007-03-01 |
| JP4860021B2 JP4860021B2 (ja) | 2012-01-25 |
Family
ID=26338594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000002622A Expired - Fee Related JP4860021B2 (ja) | 1999-01-11 | 2000-01-11 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4860021B2 (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| JP3961240B2 (ja) | 2001-06-28 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7285459B2 (en) | 2001-08-06 | 2007-10-23 | Samsung Sdi Co., Ltd. | Flat panel display with high capacitance and method of manufacturing the same |
| KR100699987B1 (ko) * | 2001-08-06 | 2007-03-26 | 삼성에스디아이 주식회사 | 높은 캐패시턴스를 갖는 평판표시소자 및 그의 제조방법 |
| US6756608B2 (en) * | 2001-08-27 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| KR100929666B1 (ko) * | 2002-01-03 | 2009-12-03 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
| JP5105690B2 (ja) * | 2002-03-26 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6853052B2 (en) | 2002-03-26 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a buffer layer against stress |
| US8030643B2 (en) * | 2005-03-28 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| US7994000B2 (en) | 2007-02-27 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP5477303B2 (ja) * | 2011-01-12 | 2014-04-23 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| JP5613717B2 (ja) * | 2012-04-25 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール及び電子機器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06130413A (ja) * | 1992-10-14 | 1994-05-13 | Seiko Epson Corp | 液晶表示装置の製造方法 |
| JPH09191111A (ja) * | 1995-11-07 | 1997-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH09289165A (ja) * | 1996-02-23 | 1997-11-04 | Semiconductor Energy Lab Co Ltd | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
| JPH09298304A (ja) * | 1996-05-08 | 1997-11-18 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の製造方法および半導体装置の製造方法 |
| JP4024341B2 (ja) * | 1997-04-25 | 2007-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2000
- 2000-01-11 JP JP2000002622A patent/JP4860021B2/ja not_active Expired - Fee Related