JP2000269476A5 - - Google Patents
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- Publication number
- JP2000269476A5 JP2000269476A5 JP2000003347A JP2000003347A JP2000269476A5 JP 2000269476 A5 JP2000269476 A5 JP 2000269476A5 JP 2000003347 A JP2000003347 A JP 2000003347A JP 2000003347 A JP2000003347 A JP 2000003347A JP 2000269476 A5 JP2000269476 A5 JP 2000269476A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- semiconductor crystal
- concentration
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 12
- 229910003811 SiGeC Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000013139 quantization Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 1
- 229910005742 Ge—C Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000003347A JP3516623B2 (ja) | 1999-01-14 | 2000-01-12 | 半導体結晶の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP764299 | 1999-01-14 | ||
| JP11-7642 | 1999-01-14 | ||
| JP2000003347A JP3516623B2 (ja) | 1999-01-14 | 2000-01-12 | 半導体結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000269476A JP2000269476A (ja) | 2000-09-29 |
| JP3516623B2 JP3516623B2 (ja) | 2004-04-05 |
| JP2000269476A5 true JP2000269476A5 (https=) | 2004-08-26 |
Family
ID=26341977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000003347A Expired - Fee Related JP3516623B2 (ja) | 1999-01-14 | 2000-01-12 | 半導体結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3516623B2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60128647T2 (de) * | 2000-03-27 | 2007-09-20 | Matsushita Electric Industrial Co., Ltd., Kadoma | Sigec halbleiterkristall und seine herstellung |
| JP3451325B2 (ja) | 2001-03-26 | 2003-09-29 | 名古屋大学長 | シリコン・ゲルマニウム・カーボン三元混晶膜の作製方法及びシリコン・ゲルマニウム・カーボン三元混晶膜 |
| JP3461819B2 (ja) * | 2001-06-14 | 2003-10-27 | 松下電器産業株式会社 | 半導体結晶膜の製造方法 |
| KR100425579B1 (ko) * | 2001-07-21 | 2004-04-03 | 한국전자통신연구원 | 게르마늄 조성비에 따라 다른 종류의 소스를 사용하는실리콘 게르마늄 박막 형성 방법 |
| JP3719998B2 (ja) * | 2002-04-01 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP5090451B2 (ja) * | 2006-07-31 | 2012-12-05 | アプライド マテリアルズ インコーポレイテッド | 炭素含有シリコンエピタキシャル層の形成方法 |
| EP1933384B1 (en) * | 2006-12-15 | 2013-02-13 | Soitec | Semiconductor heterostructure |
| CN118412373B (zh) * | 2024-06-28 | 2024-09-27 | 合肥欧益睿芯科技有限公司 | 含超晶格外延插入的外延片及其制备方法、晶体管 |
-
2000
- 2000-01-12 JP JP2000003347A patent/JP3516623B2/ja not_active Expired - Fee Related
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