JP2000269476A5 - - Google Patents

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Publication number
JP2000269476A5
JP2000269476A5 JP2000003347A JP2000003347A JP2000269476A5 JP 2000269476 A5 JP2000269476 A5 JP 2000269476A5 JP 2000003347 A JP2000003347 A JP 2000003347A JP 2000003347 A JP2000003347 A JP 2000003347A JP 2000269476 A5 JP2000269476 A5 JP 2000269476A5
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JP
Japan
Prior art keywords
layer
semiconductor
semiconductor crystal
concentration
laminate
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Application number
JP2000003347A
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English (en)
Japanese (ja)
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JP3516623B2 (ja
JP2000269476A (ja
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Priority to JP2000003347A priority Critical patent/JP3516623B2/ja
Priority claimed from JP2000003347A external-priority patent/JP3516623B2/ja
Publication of JP2000269476A publication Critical patent/JP2000269476A/ja
Application granted granted Critical
Publication of JP3516623B2 publication Critical patent/JP3516623B2/ja
Publication of JP2000269476A5 publication Critical patent/JP2000269476A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000003347A 1999-01-14 2000-01-12 半導体結晶の製造方法 Expired - Fee Related JP3516623B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000003347A JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP764299 1999-01-14
JP11-7642 1999-01-14
JP2000003347A JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2000269476A JP2000269476A (ja) 2000-09-29
JP3516623B2 JP3516623B2 (ja) 2004-04-05
JP2000269476A5 true JP2000269476A5 (cg-RX-API-DMAC10.html) 2004-08-26

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ID=26341977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000003347A Expired - Fee Related JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Country Status (1)

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JP (1) JP3516623B2 (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60128647T2 (de) 2000-03-27 2007-09-20 Matsushita Electric Industrial Co., Ltd., Kadoma Sigec halbleiterkristall und seine herstellung
JP3451325B2 (ja) 2001-03-26 2003-09-29 名古屋大学長 シリコン・ゲルマニウム・カーボン三元混晶膜の作製方法及びシリコン・ゲルマニウム・カーボン三元混晶膜
JP3461819B2 (ja) * 2001-06-14 2003-10-27 松下電器産業株式会社 半導体結晶膜の製造方法
KR100425579B1 (ko) * 2001-07-21 2004-04-03 한국전자통신연구원 게르마늄 조성비에 따라 다른 종류의 소스를 사용하는실리콘 게르마늄 박막 형성 방법
JP3719998B2 (ja) * 2002-04-01 2005-11-24 松下電器産業株式会社 半導体装置の製造方法
US8029620B2 (en) * 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
EP1933384B1 (en) * 2006-12-15 2013-02-13 Soitec Semiconductor heterostructure
CN118412373B (zh) * 2024-06-28 2024-09-27 合肥欧益睿芯科技有限公司 含超晶格外延插入的外延片及其制备方法、晶体管

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