JP2000260827A - Heating apparatus and method for mounting semiconductor chip - Google Patents
Heating apparatus and method for mounting semiconductor chipInfo
- Publication number
- JP2000260827A JP2000260827A JP11065908A JP6590899A JP2000260827A JP 2000260827 A JP2000260827 A JP 2000260827A JP 11065908 A JP11065908 A JP 11065908A JP 6590899 A JP6590899 A JP 6590899A JP 2000260827 A JP2000260827 A JP 2000260827A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- circuit board
- mounting
- heating
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＩＣ等の半導体チ
ップを回路基板に実装する際に使用される加熱装置であ
って、特に、半導体チップと回路基板との電極同士を対
向して接続する際に使用される加熱装置及び加熱方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating apparatus used for mounting a semiconductor chip such as an IC on a circuit board, and in particular, to connect electrodes of the semiconductor chip and the circuit board to face each other. The present invention relates to a heating device and a heating method used at the time.
【０００２】[0002]
【従来の技術】近年、製品の小型化という要請に対応す
るために、いわゆるフリップチップボンディングが使用
されている。フリップチップボンディングにおいては、
半導体チップの電極と回路基板の電極とが、対向して位
置合わせされた後に半田バンプをはさんで接している。
そして、加熱装置としてリフロー炉を使用して、リフロ
ー炉中において所定温度の雰囲気中を通過する際に、半
田バンプが溶融し、その後に冷却されて硬化することに
よって、回路基板と半導体チップとの電極同士が電気的
に接続される。2. Description of the Related Art In recent years, so-called flip-chip bonding has been used to meet the demand for miniaturization of products. In flip chip bonding,
After the electrodes of the semiconductor chip and the electrodes of the circuit board are opposed and aligned, they are in contact with each other with solder bumps interposed therebetween.
Then, using a reflow furnace as a heating device, when passing through an atmosphere at a predetermined temperature in the reflow furnace, the solder bumps are melted, and then cooled and hardened, so that the circuit board and the semiconductor chip The electrodes are electrically connected.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の加熱装置を使用する場合には、回路基板と半導体チ
ップとが、同じ温度の高温雰囲気中（例えば２００℃〜
２３０℃程度）を通過する。ここで、ガラスエポキシ基
板からなる回路基板とシリコンからなる半導体チップと
の熱膨張係数については、ガラスエポキシ基板の方が大
きい値を有する。したがって、熱膨張係数の差に起因し
て、回路基板と半導体チップとが一体となった製品にお
いて反りが発生する。そして、発生した反りによる応力
が半田バンプの根元に集中するので、回路基板と半導体
チップとの間における電気的接触不良の発生や、製品の
短寿命という信頼性の問題があった。However, when the above-described conventional heating device is used, the circuit board and the semiconductor chip are placed in a high-temperature atmosphere at the same temperature (for example, 200 ° C. to 200 ° C.).
230 ° C). Here, the glass epoxy substrate has a larger coefficient of thermal expansion between the circuit board made of the glass epoxy substrate and the semiconductor chip made of silicon. Therefore, warpage occurs in a product in which the circuit board and the semiconductor chip are integrated due to the difference in the coefficient of thermal expansion. Then, since the stress due to the generated warp is concentrated at the root of the solder bump, there is a problem of occurrence of electrical contact failure between the circuit board and the semiconductor chip and a short life of the product.
【０００４】本発明は、上述の課題を解決するためにな
されたものであり、回路基板と半導体チップとの電気的
な接続において、信頼性を確保できる半導体チップ実装
用加熱装置及び加熱方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and provides a heating device and a heating method for mounting a semiconductor chip, which can ensure reliability in electrical connection between a circuit board and a semiconductor chip. The purpose is to do.
【０００５】[0005]
【課題を解決するための手段】上述の技術的課題を解決
するために、本発明に係る半導体チップ実装用加熱装置
は、半導体チップの電極と回路基板の電極とを電気的に
接続する際に使用される半導体チップ実装用加熱装置で
あって、第１の温度を維持しながら回路基板を保持する
保持手段と、回路基板に半導体チップを圧接する圧接手
段と、第１の温度よりも高い第２の温度によって半導体
チップを加熱する加熱手段とを備えたことを特徴とする
ものである。SUMMARY OF THE INVENTION In order to solve the above-mentioned technical problems, a semiconductor chip mounting heating apparatus according to the present invention is used to electrically connect an electrode of a semiconductor chip to an electrode of a circuit board. A heating device for mounting a semiconductor chip, comprising: holding means for holding a circuit board while maintaining a first temperature; pressing means for pressing a semiconductor chip against the circuit board; And heating means for heating the semiconductor chip by the temperature of (2).
【０００６】また、本発明に係る半導体チップ実装用加
熱装置は、上述の加熱装置において保持手段は気体によ
って冷却されることを特徴とするものである。Further, a heating device for mounting a semiconductor chip according to the present invention is characterized in that the holding means in the above-mentioned heating device is cooled by gas.
【０００７】また、本発明に係る半導体チップ実装用加
熱装置は、上述の加熱装置において保持手段は液体によ
って冷却されることを特徴とするものである。Further, a heating device for mounting a semiconductor chip according to the present invention is characterized in that the holding means in the above-mentioned heating device is cooled by a liquid.
【０００８】また、本発明に係る半導体チップ実装用加
熱方法は、半導体チップの電極と回路基板の電極とを電
気的に接続するための半導体チップ実装用加熱方法であ
り、ステージによって回路基板を保持する工程と、半導
体チップと回路基板との電極同士を対向させた後に位置
合わせする工程と、半導体チップを所定の温度に加熱す
る工程と、保持された回路基板に半導体チップを圧接す
る工程と、ステージを冷却する工程とを備えたことを特
徴とするものである。A heating method for mounting a semiconductor chip according to the present invention is a heating method for mounting a semiconductor chip for electrically connecting an electrode of a semiconductor chip and an electrode of a circuit board, wherein the circuit board is held by a stage. A step of positioning the electrodes of the semiconductor chip and the circuit board after facing each other; a step of heating the semiconductor chip to a predetermined temperature; and a step of pressing the semiconductor chip against the held circuit board. And a step of cooling the stage.
【０００９】[0009]
【作用】本発明に係る半導体チップ実装用加熱装置によ
れば、半導体チップと回路基板との電極同士の電気的接
続を確保するために必要な温度を維持しつつ、回路基板
を、半導体チップを加熱する第２の温度よりも低い第１
の温度に維持することができる。これにより、半導体チ
ップと回路基板との熱膨張係数の差に起因する反りを抑
制することができる。また、回路基板を保持する保持手
段が気体又は液体によって強制的に冷却されるので、半
導体チップを加熱する際の熱が保持手段に伝導してきた
場合においても、保持手段の温度を確実に第１の温度に
維持することができる。また、本発明に係る半導体チッ
プ実装用加熱方法によれば、加熱された半導体チップか
ら回路基板を介して熱がステージに伝導した場合に、ス
テージを冷却することにより回路基板の温度上昇を抑制
する。これにより、半導体チップと回路基板との熱膨張
係数の差に起因する反りを抑制することができる。According to the semiconductor chip mounting heating apparatus of the present invention, the circuit board is connected to the semiconductor chip while maintaining the temperature required to secure the electrical connection between the electrodes of the semiconductor chip and the circuit board. A first temperature lower than the second temperature to be heated
Temperature can be maintained. Thereby, it is possible to suppress the warpage caused by the difference in the coefficient of thermal expansion between the semiconductor chip and the circuit board. Further, since the holding means for holding the circuit board is forcibly cooled by the gas or the liquid, even when the heat for heating the semiconductor chip is conducted to the holding means, the temperature of the holding means can be reliably reduced to the first temperature. Temperature can be maintained. Further, according to the heating method for mounting a semiconductor chip of the present invention, when heat is transferred from the heated semiconductor chip to the stage via the circuit board, the stage is cooled to suppress a rise in the temperature of the circuit board. . Thereby, it is possible to suppress the warpage caused by the difference in the coefficient of thermal expansion between the semiconductor chip and the circuit board.
【００１０】[0010]
【発明の実施の形態】（第１の実施形態）以下、本発明
の第１の実施形態について、図面を参照しながら説明す
る。図１は、本実施形態に係る半導体チップ実装用加熱
装置を使用したフリップチップボンディングの説明図で
ある。(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram of flip chip bonding using the heating device for mounting a semiconductor chip according to the present embodiment.
【００１１】図１において、ステージ１は、上面が水平
になるように設けられている。回路基板２は、例えばガ
ラスエポキシ基板であって、ステージ１の上面に吸着に
よって保持されている。回路基板２上には、電極３が設
けられている。圧接ツール４には、セラミックヒータ５
と真空チャック６とが固定されている。半導体チップ７
は、真空チャック６によって保持されながらセラミック
ヒータ５によって加熱され、更に圧接ツール４によって
回路基板２に対して圧接される。半導体チップ７の電極
（図示なし）上には、半田バンプ８が設けられている。
つまり、圧接ツール４により半導体チップ７が回路基板
２に圧接される際には、半田バンプ８が電極３に圧接さ
れることになる。冷却装置９は、エアブロー１０によっ
てステージ１を冷却するための冷却手段である。In FIG. 1, the stage 1 is provided so that the upper surface is horizontal. The circuit board 2 is, for example, a glass epoxy board, and is held on the upper surface of the stage 1 by suction. The electrodes 3 are provided on the circuit board 2. The pressing tool 4 includes a ceramic heater 5
And the vacuum chuck 6 are fixed. Semiconductor chip 7
Is heated by the ceramic heater 5 while being held by the vacuum chuck 6, and is pressed against the circuit board 2 by the pressing tool 4. Solder bumps 8 are provided on electrodes (not shown) of the semiconductor chip 7.
That is, when the semiconductor chip 7 is pressed against the circuit board 2 by the pressing tool 4, the solder bump 8 is pressed against the electrode 3. The cooling device 9 is a cooling unit for cooling the stage 1 by the air blow 10.
【００１２】本実施形態に係る半導体チップ実装用加熱
装置を使用する場合の動作を、説明する。まず、ステー
ジ１上に回路基板２を保持し、真空チャック６によって
半導体チップ７を保持する。次に、セラミックヒータ５
によって半導体チップ７を加熱するとともに、回路基板
２の電極３に対して半導体チップ７の半田バンプ８を位
置合わせする。次に、圧接ツール４によって回路基板２
に対して半導体チップ７を圧接するとともに、冷却装置
９によってエアブロー１０をステージ１に吹き付けてス
テージ１を冷却する。ここで、セラミックヒータ５か
ら、真空チャック６と半導体チップ７とを順次介して回
路基板２に伝導した熱は、冷却されたステージ１に速や
かに拡散される。したがって、回路基板２の温度が、加
熱された半導体チップ７の温度よりも低い温度に一定に
維持されながら、溶融した半田バンプ８が半導体チップ
７の電極（図示なし）と回路基板２の電極３とを電気的
に接続する。The operation when the heating device for mounting a semiconductor chip according to the present embodiment is used will be described. First, the circuit board 2 is held on the stage 1, and the semiconductor chip 7 is held by the vacuum chuck 6. Next, the ceramic heater 5
In addition to heating the semiconductor chip 7, the solder bumps 8 of the semiconductor chip 7 are aligned with the electrodes 3 of the circuit board 2. Next, the circuit board 2 is
The semiconductor chip 7 is pressed against the substrate 1 and an air blow 10 is blown against the stage 1 by the cooling device 9 to cool the stage 1. Here, heat conducted from the ceramic heater 5 to the circuit board 2 via the vacuum chuck 6 and the semiconductor chip 7 in order is quickly diffused to the cooled stage 1. Therefore, while the temperature of the circuit board 2 is kept constant at a lower temperature than the temperature of the heated semiconductor chip 7, the molten solder bumps 8 form the electrodes of the semiconductor chip 7 (not shown) and the electrodes 3 of the circuit board 2. And are electrically connected.
【００１３】本実施形態に係る半導体チップ実装用加熱
装置の特徴は、半導体チップ７の半田バンプ８が溶融し
て回路基板２の電極３に接続される際に、回路基板２の
温度が、半導体チップ７の温度よりも低い一定の温度に
保たれることである。このことにより、半導体チップ７
に比べて大きい熱膨張係数を有する回路基板２の熱膨張
が抑制されるので、回路基板２と半導体チップ７とが一
体となった製品における反りが抑制される。したがっ
て、反りによって発生し半田バンプ８の根元に集中する
応力が軽減されるので、回路基板２と半導体チップ７と
の間の電気的な接触不良を防止できるとともに製品の長
寿命化が可能になる。A feature of the heating device for mounting a semiconductor chip according to the present embodiment is that when the solder bumps 8 of the semiconductor chip 7 are melted and connected to the electrodes 3 of the circuit board 2, the temperature of the That is, a constant temperature lower than the temperature of the chip 7 is maintained. As a result, the semiconductor chip 7
Since the thermal expansion of the circuit board 2 having a larger thermal expansion coefficient than that of the above is suppressed, the warpage of a product in which the circuit board 2 and the semiconductor chip 7 are integrated is suppressed. Therefore, the stress generated by the warpage and concentrated on the root of the solder bump 8 is reduced, so that a poor electrical contact between the circuit board 2 and the semiconductor chip 7 can be prevented and the life of the product can be extended. .
【００１４】なお、エアブローによるステージの冷却に
ついて説明したが、冷却用のガスとしては、製造工程に
おいて容易に入手できる他の気体、例えばＮ2 ガスを使
用してもよい。更に、冷却用のガスに対して冷却器を使
用して、更に冷却効果を高めることもできる。Although the cooling of the stage by air blow has been described, other gases that can be easily obtained in the manufacturing process, such as N 2 gas, may be used as the cooling gas. Further, a cooling device can be used for the cooling gas to further enhance the cooling effect.
【００１５】（第２の実施形態）以下、本発明の第２の
実施形態について、図面を参照しながら説明する。図２
は、本実施形態に係る半導体チップ実装用加熱装置を使
用したフリップチップボンディングの説明図である。(Second Embodiment) A second embodiment of the present invention will be described below with reference to the drawings. FIG.
FIG. 4 is an explanatory diagram of flip chip bonding using the semiconductor chip mounting heating device according to the present embodiment.
【００１６】図２において、ステージ１の内部であって
回路基板２が保持される面の近傍には、冷却液用配管１
１が設けられている。冷却液用配管１１の内部には、例
えば水からなる冷却液１２が封入されている。そして、
加熱された半導体チップ７が回路基板２に対して圧接さ
れる際に、冷却液１２が冷却液用配管１１内を循環する
ことによって、ステージ１が冷却される。したがって、
回路基板２の温度が、加熱された半導体チップ７の温度
よりも低い温度に一定に維持されつつ、溶融した半田バ
ンプ８が、半導体チップ７の電極（図示なし）と回路基
板２の電極３とを電気的に接続する。In FIG. 2, a coolant pipe 1 is provided inside the stage 1 and near a surface on which the circuit board 2 is held.
1 is provided. A coolant 12 made of, for example, water is sealed in the coolant pipe 11. And
When the heated semiconductor chip 7 is pressed against the circuit board 2, the stage 1 is cooled by circulating the coolant 12 in the coolant pipe 11. Therefore,
While the temperature of the circuit board 2 is kept constant at a lower temperature than the temperature of the heated semiconductor chip 7, the molten solder bumps 8 form the electrodes of the semiconductor chip 7 (not shown) and the electrodes 3 of the circuit board 2. Are electrically connected.
【００１７】本実施形態によっても、半導体チップ７に
比べて大きい熱膨張係数を有する回路基板２の熱膨張が
抑制されるので、回路基板２と半導体チップ７とが一体
となった製品における反りが抑制される。したがって、
反りによって発生し半田バンプ８の根元に集中する応力
が軽減されるので、回路基板２と半導体チップ７との間
の電気的な接触不良を防止できるとともに製品の長寿命
化が可能になる。According to the present embodiment, since the thermal expansion of the circuit board 2 having a larger thermal expansion coefficient than that of the semiconductor chip 7 is suppressed, the warpage of a product in which the circuit board 2 and the semiconductor chip 7 are integrated is reduced. Is suppressed. Therefore,
Since the stress generated by the warpage and concentrated on the root of the solder bump 8 is reduced, a poor electrical contact between the circuit board 2 and the semiconductor chip 7 can be prevented and the life of the product can be extended.
【００１８】なお、以上説明した各実施形態において
は、ステージ１にヒータを内蔵させて温度制御し、冷却
と併用することもできる。この場合には、回路基板２と
半導体チップ７との熱膨張係数の差を考慮してステージ
１の温度を設定し、冷却とヒータによる温度制御との条
件を決定すればよい。In each of the above-described embodiments, the stage 1 may have a built-in heater to control the temperature and use it together with cooling. In this case, the temperature of the stage 1 may be set in consideration of the difference in the coefficient of thermal expansion between the circuit board 2 and the semiconductor chip 7, and the conditions for cooling and temperature control by the heater may be determined.
【００１９】また、セラミックヒータ５を温度制御し
て、半田バンプ８を溶融・硬化させる際の温度プロファ
イルを設定することもできる。この場合には、温度プロ
ファイルに応じて、冷却の条件を制御することが好まし
い。例えば、加熱前の半導体チップ７を回路基板２に圧
接した後に、温度プロファイルにおける高温の部分では
エアブローや冷却液の流量を増加させることによって、
良好な接続と高信頼性とを有する製品が得られる。Further, the temperature profile of the solder heater 8 can be set by melting and curing the solder bump 8 by controlling the temperature of the ceramic heater 5. In this case, it is preferable to control the cooling conditions according to the temperature profile. For example, after the semiconductor chip 7 before heating is pressed against the circuit board 2, the air flow or the flow rate of the cooling liquid is increased at a high temperature portion in the temperature profile,
A product having good connection and high reliability is obtained.
【００２０】また、回路基板２としてガラスエポキシ基
板を使用したが、これに限らず、シリコンよりも大きい
熱膨張係数を有する、例えばガラス、セラミック、金属
等をベース材とした回路基板を使用してもよい。Although a glass epoxy board is used as the circuit board 2, the present invention is not limited to this. For example, a circuit board having a larger thermal expansion coefficient than silicon, such as glass, ceramic, metal, or the like, may be used. Is also good.
【００２１】また、半導体チップ７の電極上に予め半田
バンプ８を設けた構成について説明したが、これに代え
て、導電性物質として例えばＡｇ−Ｐｄの微粒子を混入
した導電性樹脂を使用してもよく、更に、回路基板２の
電極３上に予め導電性物質を設けてもよい。Also, the configuration in which the solder bumps 8 are provided in advance on the electrodes of the semiconductor chip 7 has been described. Instead, a conductive resin mixed with, for example, Ag-Pd fine particles is used as the conductive material. Alternatively, a conductive material may be provided on the electrode 3 of the circuit board 2 in advance.
【００２２】更に、回路基板２と半導体チップ７との電
極同士に予めＡｕめっきを施し、電極同士を圧接した状
態で半導体チップ７の周囲に熱硬化性樹脂を塗布した後
に、本発明に係る半導体チップ実装用加熱装置を使用し
て熱硬化性樹脂を硬化させることもできる。この場合に
は、硬化した樹脂の応力によって、電極同士の電気的な
接続が確保される。Further, the electrodes of the circuit board 2 and the semiconductor chip 7 are preliminarily plated with Au, and a thermosetting resin is applied around the semiconductor chip 7 in a state where the electrodes are pressed against each other. The thermosetting resin can be cured using a chip mounting heating device. In this case, the electrical connection between the electrodes is secured by the stress of the cured resin.
【００２３】[0023]
【発明の効果】本発明によれば、半導体チップと回路基
板との電極同士を電気的に接続する際に、回路基板を、
半導体チップを加熱する第２の温度よりも低い第１の温
度に確実に維持することができる。これによって、半導
体チップと回路基板との熱膨張係数の差に起因する反り
を抑制することができるので、電極同士の接続部に印加
される応力が低減される。したがって、高信頼性を実現
する半導体チップ実装用加熱装置を提供できるという、
優れた実用的な効果を奏するものである。また、本発明
によれば、加熱された半導体チップから回路基板を介し
て熱がステージに伝導した場合に、ステージを冷却する
ことにより回路基板の温度上昇を抑制する。これによ
り、半導体チップと回路基板との熱膨張係数の差に起因
する反りを抑制することができるので、電極同士の接続
部に印加される応力が低減される。したがって、高信頼
性を実現する半導体チップ実装用加熱方法を提供できる
という、優れた実用的な効果を奏するものであるAccording to the present invention, when the electrodes of the semiconductor chip and the circuit board are electrically connected to each other, the circuit board is
It is possible to reliably maintain the first temperature lower than the second temperature for heating the semiconductor chip. Thereby, the warpage caused by the difference in the coefficient of thermal expansion between the semiconductor chip and the circuit board can be suppressed, so that the stress applied to the connection between the electrodes is reduced. Therefore, it is possible to provide a semiconductor chip mounting heating device that achieves high reliability.
It has excellent practical effects. Further, according to the present invention, when heat is transferred from the heated semiconductor chip to the stage via the circuit board, the stage is cooled to suppress an increase in the temperature of the circuit board. Thereby, the warpage due to the difference in the coefficient of thermal expansion between the semiconductor chip and the circuit board can be suppressed, so that the stress applied to the connection between the electrodes is reduced. Therefore, it is possible to provide a semiconductor chip mounting heating method that achieves high reliability, which is an excellent practical effect.
【図１】本発明の第１の実施形態に係る半導体チップ実
装用加熱装置を使用したフリップチップボンディングの
説明図である。FIG. 1 is an explanatory diagram of flip chip bonding using a semiconductor chip mounting heating device according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態に係る半導体チップ実
装用加熱装置を使用したフリップチップボンディングの
説明図である。FIG. 2 is an explanatory diagram of flip chip bonding using a semiconductor chip mounting heating device according to a second embodiment of the present invention.
１ ステージ（保持手段） ２ 回路基板 ３ 電極 ４ 圧接ツール（圧接手段） ５ セラミックヒータ（加熱手段） ６ 真空チャック ７ 半導体チップ ８ 半田バンプ ９ 冷却装置 １０ エアブロー １１ 冷却液用配管 １２ 冷却液 DESCRIPTION OF SYMBOLS 1 Stage (holding means) 2 Circuit board 3 Electrode 4 Pressure contact tool (pressure contact means) 5 Ceramic heater (heating means) 6 Vacuum chuck 7 Semiconductor chip 8 Solder bump 9 Cooling device 10 Air blow 11 Coolant piping 12 Coolant
Claims (4)
を電気的に接続する際に使用される半導体チップ実装用
加熱装置であって、 第１の温度を維持しながら前記回路基板を保持する保持
手段と、 前記回路基板に前記半導体チップを圧接する圧接手段
と、 前記第１の温度よりも高い第２の温度によって前記半導
体チップを加熱する加熱手段とを備えたことを特徴とす
る半導体チップ実装用加熱装置。1. A heating device for mounting a semiconductor chip used for electrically connecting an electrode of a semiconductor chip and an electrode of a circuit board, wherein the heating apparatus holds the circuit board while maintaining a first temperature. A semiconductor chip comprising: holding means; pressing means for pressing the semiconductor chip against the circuit board; and heating means for heating the semiconductor chip at a second temperature higher than the first temperature. Heating device for mounting.
装置において、 前記保持手段は気体によって冷却されることを特徴とす
る半導体チップ実装用加熱装置。2. The heating device for mounting a semiconductor chip according to claim 1, wherein the holding means is cooled by a gas.
装置において、 前記保持手段は液体によって冷却されることを特徴とす
る半導体チップ実装用加熱装置。3. The heating device for mounting a semiconductor chip according to claim 1, wherein said holding means is cooled by a liquid.
を電気的に接続するための半導体チップ実装用加熱方法
であって、 ステージによって前記回路基板を保持する工程と、 前記半導体チップと回路基板との電極同士を対向させた
後に位置合わせする工程と、 前記半導体チップを所定の温度に加熱する工程と、 前記保持された回路基板に前記半導体チップを圧接する
工程と、 前記ステージを冷却する工程とを備えたことを特徴とす
る半導体チップ実装用加熱方法。4. A semiconductor chip mounting heating method for electrically connecting an electrode of a semiconductor chip and an electrode of a circuit board, the method comprising: holding the circuit board by a stage; A step of positioning the electrodes after facing each other, a step of heating the semiconductor chip to a predetermined temperature, a step of pressing the semiconductor chip against the held circuit board, and a step of cooling the stage And a heating method for mounting a semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11065908A JP2000260827A (en) | 1999-03-12 | 1999-03-12 | Heating apparatus and method for mounting semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11065908A JP2000260827A (en) | 1999-03-12 | 1999-03-12 | Heating apparatus and method for mounting semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000260827A true JP2000260827A (en) | 2000-09-22 |
Family
ID=13300542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11065908A Pending JP2000260827A (en) | 1999-03-12 | 1999-03-12 | Heating apparatus and method for mounting semiconductor chip |
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| Country | Link |
|---|---|
| JP (1) | JP2000260827A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433246C (en) * | 2004-06-24 | 2008-11-12 | 夏普株式会社 | Bonding apparatus, bonding method, and method for manufacturing semiconductor device |
| US8067835B2 (en) | 2007-11-27 | 2011-11-29 | Renesas Electronics Corporation | Method and apparatus for manufacturing semiconductor module |
| JP2012104792A (en) * | 2010-11-11 | 2012-05-31 | Samsung Electro-Mechanics Co Ltd | Manufacturing method for semiconductor package substrate |
| US9606456B2 (en) | 2014-05-21 | 2017-03-28 | Canon Kabushiki Kaisha | Lithography apparatus, determination method, and method of manufacturing article |
| CN110654030A (en) * | 2018-06-28 | 2020-01-07 | 松下知识产权经营株式会社 | Component pressure-bonding device, sheet setting unit, and method for mounting sheet setting unit |
-
1999
- 1999-03-12 JP JP11065908A patent/JP2000260827A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100433246C (en) * | 2004-06-24 | 2008-11-12 | 夏普株式会社 | Bonding apparatus, bonding method, and method for manufacturing semiconductor device |
| US8067835B2 (en) | 2007-11-27 | 2011-11-29 | Renesas Electronics Corporation | Method and apparatus for manufacturing semiconductor module |
| JP2012104792A (en) * | 2010-11-11 | 2012-05-31 | Samsung Electro-Mechanics Co Ltd | Manufacturing method for semiconductor package substrate |
| US9606456B2 (en) | 2014-05-21 | 2017-03-28 | Canon Kabushiki Kaisha | Lithography apparatus, determination method, and method of manufacturing article |
| KR101751593B1 (en) * | 2014-05-21 | 2017-06-27 | 캐논 가부시끼가이샤 | Lithography apparatus, determination method, and method of manufacturing article |
| TWI637240B (en) * | 2014-05-21 | 2018-10-01 | 佳能股份有限公司 | Lithography apparatus which forms a pattern on a substrate,method of manufacturing an element, and determination method of determining an order of detecting sample shot regions by a detection unit |
| CN110654030A (en) * | 2018-06-28 | 2020-01-07 | 松下知识产权经营株式会社 | Component pressure-bonding device, sheet setting unit, and method for mounting sheet setting unit |
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