JP2000260803A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法Info
- Publication number
- JP2000260803A JP2000260803A JP2000005026A JP2000005026A JP2000260803A JP 2000260803 A JP2000260803 A JP 2000260803A JP 2000005026 A JP2000005026 A JP 2000005026A JP 2000005026 A JP2000005026 A JP 2000005026A JP 2000260803 A JP2000260803 A JP 2000260803A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- photosensitive resin
- electrode
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000007747 plating Methods 0.000 claims abstract description 140
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052802 copper Inorganic materials 0.000 claims abstract description 67
- 239000010949 copper Substances 0.000 claims abstract description 67
- 229910000679 solder Inorganic materials 0.000 claims abstract description 63
- 229920005989 resin Polymers 0.000 claims description 72
- 239000011347 resin Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000756 V alloy Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000005026A JP2000260803A (ja) | 1999-01-05 | 2000-01-04 | 半導体装置とその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30999 | 1999-01-05 | ||
| JP11-309 | 1999-01-05 | ||
| JP2000005026A JP2000260803A (ja) | 1999-01-05 | 2000-01-04 | 半導体装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000260803A true JP2000260803A (ja) | 2000-09-22 |
| JP2000260803A5 JP2000260803A5 (enrdf_load_stackoverflow) | 2007-02-15 |
Family
ID=26333266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000005026A Pending JP2000260803A (ja) | 1999-01-05 | 2000-01-04 | 半導体装置とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000260803A (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7863739B2 (en) | 2001-03-05 | 2011-01-04 | Megica Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| KR101009192B1 (ko) * | 2008-12-10 | 2011-01-19 | 주식회사 네패스 | 반도체 장치의 범프 구조물 및 그 제조방법 |
| US7902679B2 (en) | 2001-03-05 | 2011-03-08 | Megica Corporation | Structure and manufacturing method of a chip scale package with low fabrication cost, fine pitch and high reliability solder bump |
| US7960270B2 (en) | 2002-01-07 | 2011-06-14 | Megica Corporation | Method for fabricating circuit component |
| US8021976B2 (en) | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US8021921B2 (en) | 2002-10-25 | 2011-09-20 | Megica Corporation | Method of joining chips utilizing copper pillar |
| US8067837B2 (en) | 2004-09-20 | 2011-11-29 | Megica Corporation | Metallization structure over passivation layer for IC chip |
| US8178967B2 (en) | 2001-09-17 | 2012-05-15 | Megica Corporation | Low fabrication cost, high performance, high reliability chip scale package |
| US8294279B2 (en) | 2005-01-25 | 2012-10-23 | Megica Corporation | Chip package with dam bar restricting flow of underfill |
| US8481418B2 (en) | 2002-05-01 | 2013-07-09 | Megica Corporation | Low fabrication cost, high performance, high reliability chip scale package |
| US8901733B2 (en) | 2001-02-15 | 2014-12-02 | Qualcomm Incorporated | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| JP2019161108A (ja) * | 2018-03-15 | 2019-09-19 | 日亜化学工業株式会社 | 発光装置、発光素子、及び、発光素子の製造方法 |
| CN113324202A (zh) * | 2021-06-07 | 2021-08-31 | 厦门天马微电子有限公司 | 灯条、包括灯条的背光模组及显示装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03248528A (ja) * | 1990-02-27 | 1991-11-06 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPH04217324A (ja) * | 1990-12-19 | 1992-08-07 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH06112213A (ja) * | 1992-08-31 | 1994-04-22 | Internatl Business Mach Corp <Ibm> | エッチング処理方法 |
| JPH09115912A (ja) * | 1995-10-20 | 1997-05-02 | Fujitsu Ltd | 半導体素子のバンプ形成方法と半導体素子 |
| JPH09205096A (ja) * | 1996-01-24 | 1997-08-05 | Toshiba Corp | 半導体素子およびその製造方法および半導体装置およびその製造方法 |
| JPH104098A (ja) * | 1996-06-14 | 1998-01-06 | Denso Corp | バンプ電極形成方法 |
-
2000
- 2000-01-04 JP JP2000005026A patent/JP2000260803A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03248528A (ja) * | 1990-02-27 | 1991-11-06 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPH04217324A (ja) * | 1990-12-19 | 1992-08-07 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JPH06112213A (ja) * | 1992-08-31 | 1994-04-22 | Internatl Business Mach Corp <Ibm> | エッチング処理方法 |
| JPH09115912A (ja) * | 1995-10-20 | 1997-05-02 | Fujitsu Ltd | 半導体素子のバンプ形成方法と半導体素子 |
| JPH09205096A (ja) * | 1996-01-24 | 1997-08-05 | Toshiba Corp | 半導体素子およびその製造方法および半導体装置およびその製造方法 |
| JPH104098A (ja) * | 1996-06-14 | 1998-01-06 | Denso Corp | バンプ電極形成方法 |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8138079B2 (en) | 1998-12-21 | 2012-03-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US8901733B2 (en) | 2001-02-15 | 2014-12-02 | Qualcomm Incorporated | Reliable metal bumps on top of I/O pads after removal of test probe marks |
| US8072070B2 (en) | 2001-03-05 | 2011-12-06 | Megica Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| US7902679B2 (en) | 2001-03-05 | 2011-03-08 | Megica Corporation | Structure and manufacturing method of a chip scale package with low fabrication cost, fine pitch and high reliability solder bump |
| US7863739B2 (en) | 2001-03-05 | 2011-01-04 | Megica Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| US8368213B2 (en) | 2001-03-05 | 2013-02-05 | Megica Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| US8158508B2 (en) | 2001-03-05 | 2012-04-17 | Megica Corporation | Structure and manufacturing method of a chip scale package |
| US9369175B2 (en) | 2001-09-17 | 2016-06-14 | Qualcomm Incorporated | Low fabrication cost, high performance, high reliability chip scale package |
| US8178967B2 (en) | 2001-09-17 | 2012-05-15 | Megica Corporation | Low fabrication cost, high performance, high reliability chip scale package |
| US8890336B2 (en) | 2002-01-07 | 2014-11-18 | Qualcomm Incorporated | Cylindrical bonding structure and method of manufacture |
| US7960270B2 (en) | 2002-01-07 | 2011-06-14 | Megica Corporation | Method for fabricating circuit component |
| US8461679B2 (en) | 2002-01-07 | 2013-06-11 | Megica Corporation | Method for fabricating circuit component |
| US8481418B2 (en) | 2002-05-01 | 2013-07-09 | Megica Corporation | Low fabrication cost, high performance, high reliability chip scale package |
| US9142527B2 (en) | 2002-10-15 | 2015-09-22 | Qualcomm Incorporated | Method of wire bonding over active area of a semiconductor circuit |
| US8026588B2 (en) | 2002-10-15 | 2011-09-27 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US9153555B2 (en) | 2002-10-15 | 2015-10-06 | Qualcomm Incorporated | Method of wire bonding over active area of a semiconductor circuit |
| US8021976B2 (en) | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US8742580B2 (en) | 2002-10-15 | 2014-06-03 | Megit Acquisition Corp. | Method of wire bonding over active area of a semiconductor circuit |
| US8421222B2 (en) | 2002-10-25 | 2013-04-16 | Megica Corporation | Chip package having a chip combined with a substrate via a copper pillar |
| US8021921B2 (en) | 2002-10-25 | 2011-09-20 | Megica Corporation | Method of joining chips utilizing copper pillar |
| US8742582B2 (en) | 2004-09-20 | 2014-06-03 | Megit Acquisition Corp. | Solder interconnect on IC chip |
| US8067837B2 (en) | 2004-09-20 | 2011-11-29 | Megica Corporation | Metallization structure over passivation layer for IC chip |
| US8294279B2 (en) | 2005-01-25 | 2012-10-23 | Megica Corporation | Chip package with dam bar restricting flow of underfill |
| KR101009192B1 (ko) * | 2008-12-10 | 2011-01-19 | 주식회사 네패스 | 반도체 장치의 범프 구조물 및 그 제조방법 |
| JP2019161108A (ja) * | 2018-03-15 | 2019-09-19 | 日亜化学工業株式会社 | 発光装置、発光素子、及び、発光素子の製造方法 |
| US10727385B2 (en) | 2018-03-15 | 2020-07-28 | Nichia Corporation | Light emitting device, light emitting element and method for manufacturing the light emitting element |
| CN113324202A (zh) * | 2021-06-07 | 2021-08-31 | 厦门天马微电子有限公司 | 灯条、包括灯条的背光模组及显示装置 |
| CN113324202B (zh) * | 2021-06-07 | 2022-05-17 | 厦门天马微电子有限公司 | 灯条、包括灯条的背光模组及显示装置 |
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Legal Events
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061224 |
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