JP2000260731A - レーザ熱処理方法、レーザ熱処理装置および半導体デバイス - Google Patents

レーザ熱処理方法、レーザ熱処理装置および半導体デバイス

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Publication number
JP2000260731A
JP2000260731A JP11063107A JP6310799A JP2000260731A JP 2000260731 A JP2000260731 A JP 2000260731A JP 11063107 A JP11063107 A JP 11063107A JP 6310799 A JP6310799 A JP 6310799A JP 2000260731 A JP2000260731 A JP 2000260731A
Authority
JP
Japan
Prior art keywords
laser
heat treatment
harmonic
pulse
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11063107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000260731A5 (enExample
Inventor
Tetsuya Ogawa
哲也 小川
Hidetada Tokioka
秀忠 時岡
Yukio Sato
行雄 佐藤
Mitsuo Inoue
満夫 井上
Tomohiro Sasagawa
智広 笹川
Mitsutoshi Miyasaka
光敏 宮坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
Original Assignee
Seiko Epson Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Mitsubishi Electric Corp filed Critical Seiko Epson Corp
Priority to JP11063107A priority Critical patent/JP2000260731A/ja
Priority to TW089103934A priority patent/TW445545B/zh
Priority to EP00907924A priority patent/EP1087429B1/en
Priority to PCT/JP2000/001375 priority patent/WO2000054314A1/ja
Priority to EP06014726A priority patent/EP1748471B1/en
Priority to KR10-2000-7012341A priority patent/KR100407748B1/ko
Priority to DE60030517T priority patent/DE60030517T8/de
Priority to CNB008008256A priority patent/CN1179401C/zh
Publication of JP2000260731A publication Critical patent/JP2000260731A/ja
Priority to US09/708,608 priority patent/US6566683B1/en
Priority to US10/420,779 priority patent/US6753548B2/en
Publication of JP2000260731A5 publication Critical patent/JP2000260731A5/ja
Pending legal-status Critical Current

Links

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  • Recrystallisation Techniques (AREA)
JP11063107A 1999-03-10 1999-03-10 レーザ熱処理方法、レーザ熱処理装置および半導体デバイス Pending JP2000260731A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP11063107A JP2000260731A (ja) 1999-03-10 1999-03-10 レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
TW089103934A TW445545B (en) 1999-03-10 2000-03-06 Laser heat treatment method, laser heat treatment apparatus and semiconductor device
KR10-2000-7012341A KR100407748B1 (ko) 1999-03-10 2000-03-08 레이저 열처리 방법, 레이저 열처리 장치 및 반도체디바이스
PCT/JP2000/001375 WO2000054314A1 (en) 1999-03-10 2000-03-08 Method and apparatus for laser heat treatment, and semiconductor device
EP06014726A EP1748471B1 (en) 1999-03-10 2000-03-08 Laser heat treatment apparatus
EP00907924A EP1087429B1 (en) 1999-03-10 2000-03-08 Method for laser heat treatment, and semiconductor device
DE60030517T DE60030517T8 (de) 1999-03-10 2000-03-08 Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung
CNB008008256A CN1179401C (zh) 1999-03-10 2000-03-08 激光热处理方法,激光热处理装置以及半导体装置
US09/708,608 US6566683B1 (en) 1999-03-10 2000-11-09 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device
US10/420,779 US6753548B2 (en) 1999-03-10 2003-04-23 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11063107A JP2000260731A (ja) 1999-03-10 1999-03-10 レーザ熱処理方法、レーザ熱処理装置および半導体デバイス

Publications (2)

Publication Number Publication Date
JP2000260731A true JP2000260731A (ja) 2000-09-22
JP2000260731A5 JP2000260731A5 (enExample) 2005-04-07

Family

ID=13219750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11063107A Pending JP2000260731A (ja) 1999-03-10 1999-03-10 レーザ熱処理方法、レーザ熱処理装置および半導体デバイス

Country Status (1)

Country Link
JP (1) JP2000260731A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016015A (ja) * 2000-04-28 2002-01-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2002031871A1 (en) * 2000-10-06 2002-04-18 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
JP2002305146A (ja) * 2001-04-06 2002-10-18 Seiko Epson Corp 薄膜半導体装置の製造方法および製造装置
JP2005085817A (ja) * 2003-09-04 2005-03-31 Mitsubishi Electric Corp 薄膜半導体装置およびその製造方法
JP2007103957A (ja) * 2001-09-07 2007-04-19 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP2008135609A (ja) * 2006-11-29 2008-06-12 Mitsubishi Electric Corp 半導体膜及び薄膜トランジスタ
US7470602B2 (en) 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
JP2009231746A (ja) * 2008-03-25 2009-10-08 Yamaguchi Univ 多結晶シリコン結晶粒界改質方法及び装置
US7642605B2 (en) 2004-02-10 2010-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2016046308A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016015A (ja) * 2000-04-28 2002-01-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2002031871A1 (en) * 2000-10-06 2002-04-18 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for producing polysilicon film, semiconductor device, and method of manufacture thereof
CN100355026C (zh) * 2000-10-06 2007-12-12 三菱电机株式会社 多晶态硅膜的制造方法和制造装置
US6884699B1 (en) 2000-10-06 2005-04-26 Mitsubishi Denki Kabushiki Kaisha Process and unit for production of polycrystalline silicon film
JP2002158184A (ja) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp レーザ熱処理用のレーザ光学系
JP2002305146A (ja) * 2001-04-06 2002-10-18 Seiko Epson Corp 薄膜半導体装置の製造方法および製造装置
JP2007103957A (ja) * 2001-09-07 2007-04-19 Semiconductor Energy Lab Co Ltd レーザー照射装置
US7470602B2 (en) 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
JP2005085817A (ja) * 2003-09-04 2005-03-31 Mitsubishi Electric Corp 薄膜半導体装置およびその製造方法
US7642605B2 (en) 2004-02-10 2010-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2008135609A (ja) * 2006-11-29 2008-06-12 Mitsubishi Electric Corp 半導体膜及び薄膜トランジスタ
JP2009231746A (ja) * 2008-03-25 2009-10-08 Yamaguchi Univ 多結晶シリコン結晶粒界改質方法及び装置
JP2016046308A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置

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