JP2005252287A5 - - Google Patents
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- Publication number
- JP2005252287A5 JP2005252287A5 JP2005106122A JP2005106122A JP2005252287A5 JP 2005252287 A5 JP2005252287 A5 JP 2005252287A5 JP 2005106122 A JP2005106122 A JP 2005106122A JP 2005106122 A JP2005106122 A JP 2005106122A JP 2005252287 A5 JP2005252287 A5 JP 2005252287A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- heat treatment
- silicon film
- width direction
- linear beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims description 64
- 238000009826 distribution Methods 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000010355 oscillation Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004587 chromatography analysis Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 98
- 239000013078 crystal Substances 0.000 description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 239000010409 thin film Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 238000001953 recrystallisation Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 241001270131 Agaricus moelleri Species 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005106122A JP3962066B2 (ja) | 2005-04-01 | 2005-04-01 | レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005106122A JP3962066B2 (ja) | 2005-04-01 | 2005-04-01 | レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09043999A Division JP3908405B2 (ja) | 1999-03-10 | 1999-03-31 | レーザ熱処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005252287A JP2005252287A (ja) | 2005-09-15 |
| JP2005252287A5 true JP2005252287A5 (enExample) | 2007-04-05 |
| JP3962066B2 JP3962066B2 (ja) | 2007-08-22 |
Family
ID=35032417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005106122A Expired - Lifetime JP3962066B2 (ja) | 2005-04-01 | 2005-04-01 | レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3962066B2 (enExample) |
-
2005
- 2005-04-01 JP JP2005106122A patent/JP3962066B2/ja not_active Expired - Lifetime
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