JP3962066B2 - レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 - Google Patents

レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 Download PDF

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Publication number
JP3962066B2
JP3962066B2 JP2005106122A JP2005106122A JP3962066B2 JP 3962066 B2 JP3962066 B2 JP 3962066B2 JP 2005106122 A JP2005106122 A JP 2005106122A JP 2005106122 A JP2005106122 A JP 2005106122A JP 3962066 B2 JP3962066 B2 JP 3962066B2
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Japan
Prior art keywords
laser
heat treatment
silicon film
width direction
linear beam
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Expired - Lifetime
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JP2005106122A
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Japanese (ja)
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JP2005252287A (ja
JP2005252287A5 (enExample
Inventor
哲也 小川
秀忠 時岡
行雄 佐藤
満夫 井上
智広 笹川
光敏 宮坂
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Seiko Epson Corp
Mitsubishi Electric Corp
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Seiko Epson Corp
Mitsubishi Electric Corp
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Priority to JP2005106122A priority Critical patent/JP3962066B2/ja
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Publication of JP2005252287A5 publication Critical patent/JP2005252287A5/ja
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  • Recrystallisation Techniques (AREA)
JP2005106122A 2005-04-01 2005-04-01 レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置 Expired - Lifetime JP3962066B2 (ja)

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JP2005106122A JP3962066B2 (ja) 2005-04-01 2005-04-01 レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005106122A JP3962066B2 (ja) 2005-04-01 2005-04-01 レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置

Related Parent Applications (1)

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JP09043999A Division JP3908405B2 (ja) 1999-03-10 1999-03-31 レーザ熱処理方法

Publications (3)

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JP2005252287A JP2005252287A (ja) 2005-09-15
JP2005252287A5 JP2005252287A5 (enExample) 2007-04-05
JP3962066B2 true JP3962066B2 (ja) 2007-08-22

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JP2005106122A Expired - Lifetime JP3962066B2 (ja) 2005-04-01 2005-04-01 レーザ熱処理方法を用いた半導体製造方法およびレーザ熱処理装置

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JP2005252287A (ja) 2005-09-15

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