JP2000258271A - Semiconductor pressure sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a surface mounting semiconductor pressure sensor having small mounting area. SOLUTION: A ceramic sensor case 2 comprises a first case part 9 having a fluid introduction hole 5, and second and third annular case parts 10, 11 wherein a plurality of surface mounting electrodes 14Da-14Df, 14Ua-14Uf for external connection with respective conductive lead-out patterns are formed on the lower surface of the first case part 9 and the upper surface of the third case part 11. Electrodes 12a-12f for case side connection formed on the inner wall face of the circumferential wall part 2b are led to the outer circumferential surface thereof through conductive lead-out patterns 13a-13f passing between the second and third annular case parts 10, 11 (inside of the circumferential wall part 2b). The conductive lead-out patterns 13a-13f and corresponding electrodes 14Da-14Df, 14Ua-14Uf for external connection are connected with a plurality of conductive patterns 16a-16f for connection provided on the outer circumferential surface of the circumferential wall part 2b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor device which detects a fluid pressure by a semiconductor pressure sensor and outputs the detected signal as an electric signal.

[0002]

2. Description of the Related Art FIG. 5 is a longitudinal sectional view of a conventional semiconductor pressure sensor device of this kind. This semiconductor pressure sensor device includes a semiconductor pressure sensor 1 made of a Si semiconductor for detecting a fluid pressure, a resin sensor case 2 supporting the semiconductor pressure sensor 1, and a metal sensor for guiding the fluid pressure to the semiconductor pressure sensor 1. A fluid introduction cylinder 3 and a plurality of terminal fittings 4 for extracting an output from the semiconductor pressure sensor 1 are provided.

The semiconductor pressure sensor 1 has a diaphragm 1a on which a resistance bridge circuit (not shown) is formed, and a plurality of connection electrodes (FIG. 1) which support the periphery of the diaphragm 1a and are connected to the resistance bridge circuit. (Not shown) is formed integrally with the diaphragm supporting portion 1b.

The sensor case 2 has a fluid introduction hole 5 for guiding a fluid to be subjected to pressure measurement to a diaphragm 1a of the semiconductor pressure sensor 1, and a diaphragm support 1b of the semiconductor pressure sensor 1 has a fluid introduction hole on the upper surface. 5 and a peripheral wall 2b surrounding the semiconductor pressure sensor 1 and integrated with the wall 2a. The inside of the peripheral wall 2b is an element housing recess 2c.

[0005] The fluid introduction cylinder 3 is provided with an element mounting seat 3a in the form of a flange at the upper end thereof.
When the sensor case 2 is formed, the fluid introducing cylinder 3 is integrated as an insert so that a coincides with the surface of the wall 2a and surrounds the fluid introducing hole 5. On the element mounting seat 3a, with the semiconductor pressure sensor 1 with the pressure receiving surface 1aa of the diaphragm portion 1a facing the fluid introduction hole 5, the diaphragm support portion 1b is bonded so that the fluid to be measured does not leak. It is fixed at.

A plurality of terminal fittings 4 are integrally attached to the sensor case 2 through its peripheral wall 2b. In this case, each terminal fitting 4 is connected to the connection electrode 4 at one end.
a protrudes into the element accommodating recess 2c, and the connection electrode portion 4b at the other end is guided outside the sensor case 2 below the bottom surface of the wall portion 2a and provided in a direction parallel to the bottom surface of the wall portion 2a. ing. The plurality of connection electrodes (not shown) of the diaphragm portion 1a and the connection electrode portions 4a of the respective terminal fittings 4 are mutually connected to the bonding wires 6.

In such a semiconductor pressure sensor device, when a fluid to be measured is supplied to the fluid introduction hole 5 and the pressure of the fluid acts on the diaphragm 1a of the semiconductor pressure sensor 1, the diaphragm is caused by a difference from the atmospheric pressure. Physical distortion occurs in the portion 1a, and the diaphragm portion 1a
The resistance value of the resistance bridge circuit provided in
The change in the resistance value is extracted as an output.

[0008]

However, in the conventional semiconductor pressure sensor device having such a structure, for example, the end of the fluid introduction cylinder 3 is set at the same level as the bottom surface of the wall 2a, and the connection electrode 4b is connected. If the surface is mounted on the same level as the bottom of the wall 2a, the sensor case 2
There is a problem that the size of the terminal fittings 4... Protruding out of the circuit board increases and the mounting area on the circuit board increases.

An object of the present invention is to provide a surface-mount type semiconductor pressure sensor device having a small mounting area.

Another object of the present invention is to provide a semiconductor pressure sensor device in which each electrode can be easily formed.

Another object of the present invention is to provide a semiconductor pressure sensor device which can be mounted even when the sensor case is turned upside down.

Another object of the present invention is to provide a semiconductor pressure sensor device in which case-side connection electrodes and external connection electrodes are formed at different levels so that electrical connection between both electrodes can be easily performed. It is in.

Another object of the present invention is to provide a semiconductor pressure sensor device which makes it possible to make the corner portions of the sensor case made of ceramic less likely to be chipped and to effectively use the corner portions.

Another object of the present invention is to provide a semiconductor pressure sensor device which can secure a required interval between electrodes even when the number of external connection electrodes increases.

[0015]

According to the present invention, there is provided a semiconductor pressure sensor device comprising a diaphragm formed with a resistance bridge circuit and a diaphragm support for supporting an outer periphery of the diaphragm. When,
A ceramic sensor case having a wall having a surface on which a diaphragm support portion of a semiconductor pressure sensor is joined and a fluid introduction hole for guiding a fluid to be pressure-measured to the diaphragm portion of the semiconductor pressure sensor. Basic configuration. A plurality of external connection electrodes for surface mounting are provided on the outer surface of the sensor case. The plurality of external connection electrodes are
The fluid introduction hole provided in the wall may be provided on another outer surface opposite to one outer surface of the sensor case in which the fluid introduction hole is open, or may be provided on both one outer surface and the other outer surface. . In this way, the sensor case can be surface-mounted upside down depending on the application.

According to the present invention, there is provided a semiconductor pressure sensor in which a diaphragm in which a resistance bridge circuit is formed and a diaphragm support for supporting an outer peripheral portion of the diaphragm are integrally formed, and a diaphragm support of the semiconductor pressure sensor on a surface thereof. And a ceramic sensor case having a wall portion formed with a fluid introduction hole for guiding a fluid to be subjected to pressure measurement to a diaphragm portion of the semiconductor pressure sensor. As an example of the case, the sensor case is provided with a circular soldered portion having a predetermined width dimension capable of being soldered so as to surround the periphery of the opening end of the fluid introduction hole on the back surface of the sensor case wall. Then, a metal cylinder is connected to the soldered portion by soldering. The metal cylinder is provided to guide the fluid to be subjected to pressure measurement to the diaphragm through the fluid introduction hole. The end face of the annular end (soldering end) of the metal cylinder is connected to the annular soldered portion by soldering, but the soldered portion is not provided with a flange. You may. When the flange is not provided on the portion to be soldered, the width dimension of the metal thin film forming the annular portion to be soldered is determined within a range where the soldering strength is not significantly reduced. Note that, in the specification of the present application, the term “solder” refers to a bonding material that has a function of melting when heated and bonding metals when cooled naturally.

In a specific sensor case used in the present invention, a plurality of case-side connection electrodes are formed on the inner wall surface of the peripheral wall of the sensor case, and a plurality of connection electrodes are provided on the upper and lower surfaces of the peripheral wall of the sensor case, respectively. Are formed on the outer peripheral surface of the peripheral wall portion, and a plurality of connection conductive patterns for mutually connecting the corresponding electrodes of the plurality of external connection electrodes formed on the upper surface and the lower surface of the peripheral wall portion, respectively. Form. The plurality of case-side connection electrodes extend to the outer peripheral surface of the peripheral wall portion through the inside of the peripheral wall portion and are connected to the corresponding plurality of connection conductive patterns by a plurality of conductive extraction patterns extending to the outer peripheral surface.

When the above-described sensor case is used, a first case component including a wall portion and an annular second portion that forms a part of a peripheral wall portion by joining a lower surface to an upper surface of the first case component portion. And the lower surface of the second case component is joined to the upper surface of the second case component to form the remaining portion of the peripheral wall portion and to partially expose the upper surface of the second case component to the inside in a ring shape. And a third annular case component. In this case, a plurality of case-side connection electrodes are formed on the upper surface of the second case component that is exposed inside the third case component, and the second case-position connection electrode is located below the third case component. A plurality of conductive extraction patterns connected to the plurality of case-side connection electrodes and extending to the outer peripheral surface of the sensor case wall are formed on the upper surface of the case component, and the lower surface of the first case component is formed. A plurality of external connection electrodes respectively connected to the plurality of conductive extraction patterns can be formed on the upper surface of the third case component. Then, the plurality of conductive extraction patterns and the corresponding plurality of external connection electrodes on the lower surface of the first case component and the upper surface of the third case component corresponding to the plurality of connection patterns are provided on the side surface of the sensor case. Each is connected to a conductive pattern. Thus, on the lower surface of the first case component and the upper surface of the third case component,
When a plurality of external connection electrodes connected by a plurality of conductive extraction patterns are formed, the external connection electrodes are present on the upper surface and the lower surface of the sensor case, so that the size can be reduced and the mounting area can be reduced. Type semiconductor pressure sensor device. Further, since each electrode is provided on the surface of the sensor case, it can be formed collectively and easily using a thin film forming technique, a thick film forming technique, or the like. Also, since the external connection electrodes are provided on the lower surface of the first case component and the upper surface of the third case component, the sensor case can be mounted upside down depending on the application. Further, the external connection electrodes on the lower surface of the first case component and the upper surface of the third case component are formed on the upper surface of the second case component exposed inside the third case component. The connection with the case-side connection electrode is performed by connecting a plurality of conductive leads extending to the outer peripheral surface of the peripheral wall of the sensor case at the upper surface of the second case component located below the third case component. Since the pattern and the plurality of connection conductive patterns provided on the side surface of the sensor case are connected to each other, even when the case-side connection electrode and the external connection electrode are formed at different levels, both electrodes are connected. Electrical connection between them can be easily made.

The first outer peripheral surface of the peripheral wall of the sensor case is
A plurality of conductive portions are formed by forming a plurality of grooves extending in the stacking direction in which the third case components are stacked, opening on both sides in the stacking direction, and opening in a direction perpendicular to the stacking direction and away from the outer peripheral surface. A plurality of external connection electrodes belonging to a first group formed on the lower surface of the first case component among the plurality of external connection electrodes, by exposing outer end portions of the sex extraction pattern in the corresponding plurality of grooves; And the third
Forming a plurality of external connection electrodes belonging to a second group formed on the upper surface of the case component portion adjacent to openings on both sides in the stacking direction of the plurality of grooves, respectively; A plurality of connection conductive patterns for electrically connecting the outer end of the conductive extraction pattern exposed to the outside and the pair of external connection electrodes located on both sides in the stacking direction of the groove are formed. With such a structure, there is an advantage that when the case-side connection electrode and the external connection electrode are formed at different levels, electrical connection between both electrodes can be reliably performed.

The number of grooves provided on the outer peripheral surface of the peripheral wall of the sensor case may be four or more. When the contour of the peripheral wall of the sensor case has a substantially rectangular shape having four corners, Four of these grooves are formed at four corners of the peripheral wall. Since the corners of the ceramic sensor case are easily chipped, chipping can be prevented by forming a groove in each corner as described above. In addition, by using the groove at the corner for the purpose of electrical connection, even if the number of external connection electrodes increases, the distance between adjacent grooves can be increased, so that a short circuit due to solder connection can be prevented. .

The plurality of case-side connection electrodes, the plurality of external connection electrodes, and the plurality of connection conductive patterns provided on the sensor case are formed on a base layer of tungsten formed by vapor deposition or sputtering, and on the base layer. Ni plating layer and A formed on the Ni plating layer
It is preferable to use an alloy of g and Ag or a plating layer of Au. This is performed because it is difficult to directly form a highly conductive plating on the surface of the ceramic constituting the sensor case. First, an underlayer is formed by sputtering or the like, which is familiar with ceramics, and a Ni plating layer having a strong bonding strength to tungsten is formed on the tungsten underlayer. Then, an alloy of Ag, Ag or Au is formed on the Ni plating layer. Is formed. Thus, it is possible to reliably provide the electrode and the conductive pattern made of the plating layer having good conductivity on the surface of the ceramic of the sensor case.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings. 1 to 3 are diagrams for explaining a first embodiment of the present invention.
(A) is a plan view of the semiconductor pressure sensor of the present invention, FIG.
(B) is a longitudinal sectional view of the semiconductor pressure sensor device. FIG. 2 is a view showing the back surface of the sensor case before soldering connection when a tubular body to be described later is connected by soldering. FIG. 3 is an electric circuit diagram of a resistance bridge circuit and the like formed on the semiconductor pressure sensor of the semiconductor pressure sensor device of the present example.

The semiconductor pressure sensor device of this embodiment is a semiconductor pressure sensor 1 comprising a Si semiconductor substrate for detecting a fluid pressure.
And a sensor case 2 made of ceramics for supporting the semiconductor pressure sensor 1 as basic components. The semiconductor pressure sensor 1 has a resistance r as shown in FIG.
A diaphragm section 1a in which a resistance bridge circuit 7 composed of 1, r2, r3 and r4 and a resistance circuit composed only of the resistor R4 are formed, and an outer peripheral portion of the diaphragm section 1a is supported and connected to the resistance bridge circuit 7. It has a structure in which a diaphragm support 1b on which a plurality of connection electrodes 8a to 8f and the like are formed is integrally formed. The resistances r1 and r4 of the resistance bridge circuit 7 are connected to the terminal 7b, and the resistance r
4, r3 are connected to the terminal 7c, resistors r3, r2 are connected to the terminal 7d, and resistors r2, r1 are connected to the terminal 7e. Both ends of the resistor R4 are connected to the terminals 7a and 7f. These terminal portions 7a to 7f are connected to corresponding connection electrodes 8a to 8f. The diaphragm 1a of the semiconductor pressure sensor 1 is a silicon diaphragm formed by etching a rectangular silicon wafer, and a diaphragm support 1b is formed by forming the diaphragm 1a. Diaphragm part 1
The surface of a is covered with a protective insulating film 1c after the resistors r1 to r4 and R4 are formed.

The sensor case 2 has a wall 2a and a peripheral wall 2b on the surface of which the annular diaphragm support 1b of the semiconductor pressure sensor 1 is joined. A fluid introduction hole 5 for guiding a fluid to be subjected to pressure measurement to the diaphragm 1a of the semiconductor pressure sensor 1 is formed in the wall 2a.
The annular diaphragm support 1b is joined to the surface of the wall 2a so as to surround one open end of the fluid introduction hole 5. The peripheral wall 2b has a shape surrounding the periphery of the semiconductor pressure sensor 1, and the inside of the peripheral wall 2b has an element accommodation recess 2c.
It has become. The annular diaphragm support portion 1b of the semiconductor pressure sensor 1 is hardened so that even if there is a large difference between the linear expansion coefficient of the diaphragm support portion 1b and the linear expansion coefficient of the wall portion 2a, no separation occurs between the two. It is also fixed on the wall 2b using a flexible gel adhesive. The contour shape of the peripheral wall 2b of the sensor case 2 is shown in FIG.
As shown in (A), it has a substantially rectangular shape having four corners.

Such a sensor case 2 has a first case component 9 including a wall 2a, and an annular shape in which the lower surface is joined to the upper surface of the first case component 9 to form a part of the peripheral wall 2b. And the lower surface of the second case component 10 is joined to the upper surface of the second case component 10 to form the remainder of the peripheral wall portion 2b, and a part of the upper surface of the second case component 10 is annularly formed inside. And an annular third case component 11 formed so as to be exposed to the outside. The case constituent parts 9 to 11 are integrally formed by being stacked in a state of a green body and then fired.

In the sensor case 2, bonding wires 6a to 6f are connected to required connection electrodes among a plurality of connection electrodes 8a to 8f provided in the semiconductor pressure sensor 1.
Case-side connection electrodes 12a to 12a connected by
2f exposed inside the third case component 11
Is formed on the upper surface of the case component 10 (on the inner wall surface of the peripheral wall 2b). A plurality of case-side connection electrodes 12a to 12f are provided on the upper surface of the second case component 10 located below the third case component 11, respectively.
And a plurality of conductive lead patterns 13a to 13f extending to the outer peripheral surface of the peripheral wall 2b of the sensor case 2 through the inside of the peripheral wall 2b. The plurality of conductive extraction patterns 13a to 13f are connected to the case-side connection electrode 12a.
-12f are formed by extending a tungsten underlayer described later.

The lower surface of the first case component 9 corresponding to the outer surface of the sensor case 2 in which the fluid introduction hole 5 provided in the wall 2a is open, and the third surface corresponding to the other outer surface of the outer surface of the sensor case 2 described above. On the upper surface of the case component 11,
A plurality of external connection electrodes 14Da to 14Df and a plurality of external connection electrodes 14Ua to 14Uf respectively connected to the plurality of conductive extraction patterns 13a to 13f are formed. The outer peripheral surface of the peripheral wall portion 2b of the sensor case 2 extends in the stacking direction in which the first to third case components 9 to 11 are stacked, opens on both sides in the stacking direction, and is orthogonal to the stacking direction and has an outer periphery. A plurality of grooves 15a to 15f that open in a direction away from the surface are provided. In particular, the grooves 15a, 15c, 15d and 15f are
Are provided at four corners of the peripheral wall 2b having a substantially rectangular shape. Plurality of conductive extraction patterns 13a-
13f has a plurality of grooves 15 corresponding to the outer ends.
It is exposed in a to 15f.

A plurality of external connection electrodes 14Da to 14D
f, 14Ua to 14Uf, a plurality of external connection electrodes 14Da to 14Df belonging to a first group formed on the lower surface of the first case component 9, and formed on the upper surface of the third case component 11. The plurality of external connection electrodes 14Ua to 14Uf belonging to the second group are formed adjacent to the openings on both sides in the stacking direction of the plurality of grooves 15a to 15f, respectively. Outer ends of the conductive extraction patterns 13a to 13f exposed in the grooves 15a to 15f and a plurality of pairs of external connection electrodes 14Da to 14Df located on both sides in the stacking direction of the grooves 15a to 15f.
And 14Ua to 14Uf are a plurality of connection conductive patterns 16a to 1 provided along the grooves 15a to 15f.
6f are electrically connected.

On the back surface of the first case component 9 forming the wall portion 2a, a circular soldered portion having a predetermined width so as to surround the fluid introduction hole 5 as shown in FIG. 17 are formed. The soldered portion 17 is electrically connected via a connection pattern 18 to an external connection electrode 14Dc serving as a ground electrode among the plurality of external connection electrodes 14Da to 14Df. In the soldered portion 17,
A metal cylindrical body 19 for guiding a fluid to be subjected to pressure measurement to the diaphragm 1a of the semiconductor pressure sensor 1 through the fluid introduction hole 5 is connected by soldering as necessary. I have. FIG. 1B shows an example in which the cylindrical body 19 is connected by soldering to the soldered portion 17. The width dimension of the metal thin film forming the annular soldered portion 17 shown in FIG. 2 is an example in the case where a flange portion is provided. A fluid introduction passage 19 a communicating with the fluid introduction hole 5 is formed inside the cylindrical body 19. The plurality of case-side connection electrodes 12a to 12f, the plurality of external connection electrodes 14Da to 14Df, 14Ua to 14Uf, the plurality of connection conductive patterns 16a to 16f, and the soldered portion 17 are formed by vapor deposition or sputtering. An underlayer made of tungsten, a Ni plating layer formed on the underlayer, and an Ag, Ag alloy or Au plating layer formed on the Ni plating layer.

As described above, on the lower surface of the first case component 9 and the upper surface of the third case component 11, a plurality of external connection electrodes 14Da to 14Df connected to the plurality of conductive extraction patterns 13a to 13f, respectively. 14Ua-14U
When f is formed, since each electrode is present on the surface of the sensor case 2, the size of the device can be reduced, and the mounting area for surface mounting can be reduced. Further, since the external connection electrodes 14Da to 14Df and 14Ua to 14Uf are provided on the upper surface and the lower surface of the sensor case 2, the electrodes can be formed collectively and easily using a thick film forming technology or a thin film forming technology. . Further, the external connection electrode 14
Since Da to 14Df and 14Ua to 14Uf are separately provided in two groups on the lower surface of the first case component 9 and the upper surface of the third case component 11, the upper and lower portions of the sensor case 2 can be arranged depending on the application. Can be implemented in reverse.

Further, each external connection electrode 1 on the lower surface of the first case component 9 and the upper surface of the third case component 11
The connection between 4Da to 14Df and 14Ua to 14Uf and the case-side connection electrodes 12a to 12f formed on the upper surface of the second case component 10 exposed inside the third case component 11 is as follows. Third case component 11
And a plurality of conductive lead patterns 13a to 13f extending to the outer peripheral surface of the peripheral wall portion 2b of the sensor case 2 at the upper surface of the second case component 10 located below Conductive pattern 16a for connection
16f, the case-side connection electrodes 12a to 12f and the external connection electrodes 14Da to 14D
Even when f and 14Ua to 14Uf are formed at different levels, electrical connection between both electrodes can be easily performed.

In particular, on the outer peripheral surface of the peripheral wall portion 2b of the sensor case 2, the first to third case components 9 to 11 extend in the stacking direction in which they are stacked, and are opened on both sides in the stacking direction. A plurality of grooves 15a to 15f that are orthogonal and open in a direction away from the outer peripheral surface are formed, and outer ends of the plurality of conductive extraction patterns 13a to 13f are exposed in the corresponding plurality of grooves 15a to 15f, respectively. Of the external connection electrodes 14Da to 14Df and 14Ua to 14Uf formed on the lower surface of the first case component 9.
A plurality of external connection electrodes 14Da to 14 belonging to a group
Df and a plurality of external connection electrodes 14Ua to 14C belonging to a second group formed on the upper surface of the third case component 11.
14Uf are formed adjacent to the openings on both sides in the stacking direction of the plurality of grooves 15a to 15f, respectively, and the plurality of grooves 15a are formed.
-15f, a pair of external connection electrodes 14Da-14Df, located on both sides in the stacking direction of the outer ends of the conductive extraction patterns 13a-13f exposed inside the grooves and the grooves.
When a plurality of connection conductive patterns 16a to 16f for electrically connecting 14Ua to 14Uf are formed, case-side connection electrodes 12a to 12f and external connection electrodes 14Da to 1 are formed.
When 4Df and 14Ua to 14Uf are formed at different levels, electrical connection between both electrodes can be reliably performed.

The contour of the peripheral wall 2b of the sensor case 2 is substantially rectangular with four corners, and the four grooves 15a, 15c of the plurality of grooves 15a to 15f of the peripheral wall 2b of the sensor case 2 are formed. , 15d, and 16f are provided at the four corners of the peripheral wall 2b, respectively, so that the grooves 15a, 15c, 15d, and 16f are formed at each corner in the ceramic sensor case 2 in which the corners are easily chipped. Chipping can be prevented. These corners 15a, 15c, 15d and 16f are used for electrical connection applications.
By using the groove portions, even when the number of the external connection electrodes increases, the distance between adjacent groove portions can be increased, and short-circuiting due to solder can be prevented.

Further, a plurality of case-side connection electrodes 12a
To 12f, a plurality of external connection electrodes 14Da to 14Df,
14Ua to 14Uf and a plurality of connection conductive patterns 16
a to 16f are formed by depositing an underlayer of tungsten formed by vapor deposition or sputtering, a Ni plating layer formed on the underlayer, and a plating of Ag, an Ag alloy or Au formed on the Ni plating layer. And layers. Therefore, a plating layer of Ag, an alloy of Ag or Au can be easily formed on the surface of the ceramic constituting the sensor case 2 with a required bonding strength.

Next, another embodiment of the present invention will be described. FIG. 4 is a diagram for explaining a second embodiment as a modification of the embodiment described with reference to FIGS. In this example, FIG. 4 shows only a vertical sectional view of the same semiconductor pressure sensor device as FIG.
The same components as those described with reference to FIG. 3 are denoted by the same reference numerals, and description thereof will be omitted. The difference between the semiconductor pressure sensor device of the present embodiment and FIGS. 1 to 3 is that the surface mounting external connection electrodes 14Da to 14D formed on the lower surface of the first case component 9 forming the sensor case 2. 14Df is not formed. Even in such a semiconductor pressure sensor device in which only the external connection electrodes 14Ua to 14Uf for surface mounting are formed on the upper surface of the sensor case 2 (the upper surface of the third case component 11), the upper and lower sides of the sensor case 2 are not covered. Inversely, it can be surface mounted.

[0036]

According to the present invention, there is an advantage that a semiconductor pressure sensor device that can be surface-mounted can be provided with a simple structure.

In the semiconductor pressure sensor device of the present invention, the first
A plurality of external connection electrodes respectively connected to the plurality of conductive extraction patterns are formed on the lower surface of the case component and the upper surface of the third case component, so that each electrode exists on the outer surface of the sensor case. Therefore, there is an advantage that the semiconductor pressure sensor device can be reduced in size and the mounting area when performing surface mounting can be reduced.

Since the external connection electrodes are provided on the lower surface of the first case component and the upper surface of the third case component, the semiconductor case is turned upside down depending on the application. There is an advantage that can be implemented. Further, an external connection electrode may be provided only on the upper surface of the third case component of the sensor case. In this case, the sensor case can be mounted upside down, and the mounting area when performing surface mounting is reduced. There is an advantage that it can be made smaller.

Further, the lower surface of the first case component and the third case
The connection between each external connection electrode on the upper surface of the case component and the case-side connection electrode formed on the upper surface of the second case component exposed inside the third case component is as follows: A plurality of conductive extraction patterns extending to an outer peripheral surface of a peripheral wall portion of the sensor case at a portion on an upper surface of the second case component located below the third case component; and a plurality of conductive extraction patterns provided on a side surface of the sensor case. Since the connection conductive pattern is used, even if the case-side connection electrode and the external connection electrode are formed at different levels, the electrical connection between the case-side connection electrode and the external connection electrode Can be easily performed.

Further, even in the case of a semiconductor pressure sensor device in which an external connection electrode is provided only on the upper surface of the third case component of the sensor case, the sensor case can be mounted upside down. There is an advantage that the mounting area when performing the operation can be reduced.

[Brief description of the drawings]

FIG. 1A is a plan view showing an example of an embodiment of a semiconductor pressure sensor device of the present invention, and FIG. 1B is a longitudinal sectional view of the semiconductor pressure sensor device of the present example.

FIG. 2 is a diagram showing the back surface of a sensor case before soldering connection when a cylindrical body is connected by soldering to the semiconductor pressure sensor device of the present embodiment.

FIG. 3 is an electric circuit diagram of a resistance bridge circuit and the like formed on the semiconductor pressure sensor of the semiconductor pressure sensor device of the present embodiment.

FIG. 4 is a diagram for explaining a second embodiment as a modification of the embodiment described with reference to FIGS.

FIG. 5 is a vertical sectional end view of a conventional semiconductor pressure sensor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor pressure sensor 1a Diaphragm part 1b Diaphragm support part 2 Sensor case 2a Wall part 2b Peripheral wall part 5 Fluid introduction hole 6a-6f Bonding wire 7 Resistance bridge circuit 8a-8f Connection electrode 9 First case constituent part 10 Second Case constituent part 11 Third case constituent part 12a to 12f Case-side connection electrode 13a to 13f Conductive lead-out pattern 14Da to 14Df, 14Ua to 14Uf External connection electrode 15a to 15f Groove 16a to 16f Connection conductive pattern 17 Solder Attachment part 18 Connection pattern 19 Cylindrical body 20 Solder

Claims (8)

[Claims] 1. A semiconductor pressure sensor in which a diaphragm portion on which a resistance bridge circuit is formed and a diaphragm support portion supporting an outer peripheral portion of the diaphragm portion are integrally formed, and the diaphragm support of the semiconductor pressure sensor on a surface. A ceramic sensor case having a wall portion formed with a fluid introduction hole for guiding a fluid to be subjected to pressure measurement to the diaphragm portion of the semiconductor pressure sensor, and an outer surface of the sensor case. And a plurality of external connection electrodes for surface mounting provided in the semiconductor pressure sensor device. 2. The external connection electrode according to claim 1, wherein the plurality of external connection electrodes are provided on another outer surface or one outer surface of the sensor case opposite to one outer surface of the sensor case where the fluid introduction hole provided in the wall portion is opened. The semiconductor pressure sensor device according to claim 1, wherein the semiconductor pressure sensor device is formed on both the first and second outer surfaces. 3. A semiconductor pressure sensor in which a diaphragm portion on which a resistance bridge circuit is formed, and a diaphragm support portion for supporting an outer peripheral portion of the diaphragm portion are integrally formed, and the diaphragm support of the semiconductor pressure sensor on a surface. And a ceramic sensor case having a wall formed with a fluid introduction hole for guiding a fluid to be subjected to pressure measurement to the diaphragm of the semiconductor pressure sensor. A circular soldered portion having a predetermined width dimension that can be soldered so as to surround a periphery of an opening end of the fluid introduction hole is formed on a back surface of a wall portion of the sensor case. A semiconductor pressure sensor device in which a metal cylinder is connected to the soldered portion by soldering. 4. A semiconductor pressure sensor in which a diaphragm portion on which a resistance bridge circuit is formed and a diaphragm support portion for supporting an outer peripheral portion of the diaphragm portion are integrally formed, and the diaphragm support of the semiconductor pressure sensor on a surface. And a peripheral wall surrounding the periphery of the semiconductor pressure sensor and a wall formed with a fluid introduction hole for guiding a fluid to be subjected to pressure measurement to the diaphragm of the semiconductor pressure sensor. Pressure sensor device comprising: a plurality of case-side connection electrodes formed on an inner wall surface of the peripheral wall portion of the sensor case; and an upper surface of the peripheral wall portion of the sensor case. A plurality of external connection electrodes are formed on the lower surface, respectively, and the outer peripheral surface of the peripheral wall is formed on the upper and lower surfaces of the peripheral wall, respectively. A plurality of connection conductive patterns for connecting the corresponding electrodes of the plurality of external connection electrodes to each other, wherein the plurality of case-side connection electrodes pass through the inside of the peripheral wall and an outer periphery of the peripheral wall A semiconductor pressure sensor device, wherein the semiconductor pressure sensor device is connected to a corresponding plurality of connection conductive patterns by a plurality of conductive extraction patterns extending to a surface and extending to the outer peripheral surface. 5. A semiconductor pressure sensor in which a diaphragm portion on which a resistance bridge circuit is formed and a diaphragm support portion for supporting an outer peripheral portion of the diaphragm portion are integrally formed, and the diaphragm support of the semiconductor pressure sensor on a surface. And a peripheral wall surrounding the semiconductor pressure sensor and a wall formed with a fluid introduction hole for guiding a fluid to be subjected to pressure measurement to the diaphragm of the semiconductor pressure sensor. A semiconductor pressure sensor device comprising: a sensor case; wherein the sensor case has a first case component including the wall, and a lower surface joined to an upper surface of the first case component to form the peripheral wall. An annular second case component that forms a part thereof, and a lower surface joined to an upper surface of the second case component to form a remaining portion of the peripheral wall portion And the inside second
An annular third case component formed to expose a part of the upper surface of the case component in an annular manner, and the second case component is exposed inside the third case component. A plurality of case-side connection electrodes are formed on the upper surface of the case component, and a plurality of case-side connections are respectively formed on the upper surface of the second case component located below the third case component. A plurality of conductive extraction patterns connected to the electrodes for use and extending to the outer peripheral surface of the wall portion of the sensor case, on the lower surface of the first case component and the upper surface of the third case component. A plurality of external connection electrodes respectively connected to the plurality of conductive extraction patterns; and the plurality of conductive extraction patterns and the lower surface of the first case component corresponding thereto. A semiconductor pressure sensor device connected to the plurality of external connection electrodes on the upper surface of the third case component by a plurality of connection conductive patterns provided on a side surface of the sensor case; 6. An outer peripheral surface of the peripheral wall portion of the sensor case extends in a laminating direction in which the first to third case components are laminated, and is opened on both sides in the laminating direction. A plurality of grooves that are orthogonal and open in a direction away from the outer peripheral surface are formed, and outer end portions of the plurality of conductive extraction patterns are exposed in the corresponding plurality of grooves, respectively, Among the external connection electrodes, the plurality of external connection electrodes belonging to a first group formed on the lower surface of the first case component and a second group formed on the upper surface of the third case component. Wherein the plurality of external connection electrodes are formed adjacent to openings on both sides in the stacking direction of the plurality of grooves, respectively, and the conductive lead exposed inside the grooves in the plurality of grooves. The plurality of connection conductive patterns for electrically connecting the outer end portion of the pattern and the pair of external connection electrodes located on both sides of the groove in the stacking direction are formed, respectively. Semiconductor pressure sensor device. 7. The sensor device according to claim 7, wherein the number of the plurality of grooves is four or more, and the contour of the peripheral wall of the sensor case has a substantially rectangular shape having four corners; and four of the plurality of grooves are the groove. 7. The semiconductor pressure sensor device according to claim 6, wherein are formed at each of the four corners of the peripheral wall. 8. The plurality of case-side connection electrodes, the plurality of external connection electrodes, and the plurality of connection conductive patterns are formed on a base layer made of tungsten formed by vapor deposition or sputtering, and on the base layer. Ni formed
Ag, Ag formed on the plating layer and the Ni plating layer
The semiconductor pressure sensor device according to claim 7, wherein the semiconductor pressure sensor device is made of an alloy of Au or a plating layer of Au.