JP2000252081A - Organic el element - Google Patents
Organic el elementInfo
- Publication number
- JP2000252081A JP2000252081A JP11050902A JP5090299A JP2000252081A JP 2000252081 A JP2000252081 A JP 2000252081A JP 11050902 A JP11050902 A JP 11050902A JP 5090299 A JP5090299 A JP 5090299A JP 2000252081 A JP2000252081 A JP 2000252081A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- transparent
- light emitting
- organic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000003086 colorant Substances 0.000 claims abstract description 11
- 239000007772 electrode material Substances 0.000 claims abstract description 4
- 239000012212 insulator Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Electroluminescent Light Sources (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターン等の発光表示に用いら
れる有機ＥＬ素子に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an organic EL device used for light emission display of a flat light source, a display, and other predetermined patterns.
【０００２】[0002]
【従来の技術】従来、有機ＥＬ（エレクトルミネッセン
ス）素子は、透明な基板に透孔性のＩＴＯ膜を一面に形
成し、所定のストライプ状等の形状になるようにエッチ
ングして透明電極を形成し、さらにこの透明電極の表面
に発光層を形成している。この発光層は、有機ＥＬ材料
であり、トリフェニルジアミン誘導体（ＴＰＤ）等のホ
ール輸送材料を設け、その上に発光材料であるアルミキ
ノリール錯体（Ａｌｑ３）等の電子輸送材料、さらに各
種発光材料を積層したものや、これらの混合層からな
る。そしてこの発光層の表面で、透明電極と直交する方
向に、Ａｌ，Ｌｉ，Ａｇ，Ｍｇ，Ｉｎ等の金属からなる
ストライプ状の背面電極が透明電極と対向するように設
けられ、発光部を形成している。そして発光部におい
て、透明電極と背面電極間に電圧を印加し、これら各電
極が形成するストライプの交点で発光する、いわゆる単
純マトリックスタイプの発光装置が一般的であった。2. Description of the Related Art Conventionally, an organic EL (electroluminescence) element has a transparent electrode formed on a transparent substrate by forming a porous ITO film on one surface and etching it into a predetermined stripe shape or the like. Further, a light emitting layer is formed on the surface of the transparent electrode. This light emitting layer is an organic EL material, provided with a hole transporting material such as a triphenyldiamine derivative (TPD), on which an electron transporting material such as an aluminum quinolyl complex (Alq 3 ) as a light emitting material, and various light emitting materials. It is composed of laminated materials or a mixed layer of these materials. On the surface of the light-emitting layer, a stripe-shaped back electrode made of a metal such as Al, Li, Ag, Mg, or In is provided so as to face the transparent electrode in a direction orthogonal to the transparent electrode to form a light-emitting portion. are doing. In a light emitting portion, a so-called simple matrix type light emitting device in which a voltage is applied between a transparent electrode and a back electrode and light is emitted at intersections of stripes formed by these electrodes is generally used.
【０００３】このような有機ＥＬ素子の駆動方法は、Ｉ
ＴＯの抵抗値がＡｌ−Ｌｉよりも高いので、Ａｌ−Ｌｉ
の背面電極側を走査電極として、ＩＴＯの透明電極側で
は並列に信号を出すようにしていた。[0003] The driving method of such an organic EL element is as follows.
Since the resistance value of TO is higher than that of Al-Li, Al-Li
The back electrode side is used as a scanning electrode, and signals are output in parallel on the transparent electrode side of ITO.
【０００４】[0004]
【発明が解決しようとする課題】上記従来の技術の場
合、このドットマトリクス表示の場合、微細な表示を行
うためのものや大画面化した場合、ドット数を多くする
必要があるため各ストライプ数が多くなり、１ライン当
たりの発光時間が短くなってしまい画面が暗くなるもの
であった。ここで例えば、画面の周期を１／３０秒、走
査する背面電極の本数をｎとすると、透明電極は並列に
駆動されるので、背面電極との交点での点灯時間は１／
３０ｎ秒である。実験的には、人の目でちらつきなく画
面を見られるのは１／３０秒以下であり、この状態で、
走査する電極の本数が１２８を超えると、１発光素子あ
たりの発光時間が短く、画像が暗く質が悪くなってしま
うものであった。In the case of the above-mentioned prior art, in the case of this dot matrix display, it is necessary to increase the number of dots in order to perform a fine display or to increase the number of dots when the screen is enlarged. And the light emission time per line was shortened, resulting in a dark screen. Here, for example, assuming that the screen cycle is 1/30 second and the number of back electrodes to be scanned is n, the transparent electrodes are driven in parallel, and the lighting time at the intersection with the back electrodes is 1/30.
30 ns. Experimentally, humans can see the screen without flickering in less than 1/30 second. In this state,
If the number of electrodes to be scanned exceeds 128, the light emission time per light emitting element is short, resulting in dark images and poor quality.
【０００５】一方、画質を上げるために走査側電極の本
数を増やすと、画面面積が一定であれば、電極の太さが
細くなり、透明電極は比較的抵抗値が高いので画面の位
置により電流値が変わり、画面に明るさむらができてし
まうという問題もあった。On the other hand, if the number of scanning electrodes is increased in order to improve the image quality, the thickness of the electrodes becomes thinner if the screen area is constant, and the transparent electrode has a relatively high resistance value. There was also a problem that the value changed and brightness unevenness was generated on the screen.
【０００６】なお、ＴＦＴ（薄膜トランジスタ）を用い
た駆動回路を利用することにより上記問題点は解決され
得るが、ＴＦＴは高価であり、ＥＬ素子を利用した表示
装置の価格も高くなってしまうものであった。Although the above problem can be solved by using a driving circuit using a TFT (thin film transistor), the TFT is expensive and the price of a display device using an EL element becomes high. there were.
【０００７】この発明は上記従来の問題点に鑑みてなさ
れたものであり、明るく高品質な発光表示を可能にする
有機ＥＬ素子を提供することを目的とする。The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide an organic EL device which enables bright and high-quality light-emitting display.
【０００８】[0008]
【課題を解決するための手段】この発明の有機ＥＬ素子
は、ガラスや石英、樹脂等の透明基板の表面にＩＴＯや
ＳｎＯ２等の透明な電極材料により形成された透明電極
と、上記透明電極に積層された有機ＥＬ材料からなる発
光層と、この発光層に積層され、上記透明電極に対向し
て形成されたＡｌ，Ｌｉ，Ｃｓ等からなる背面電極とを
備える。そして、上記透明基板表面に埋め込まれ、上記
透明電極のパターンに沿って上記透明電極に接した導電
体による導体パターンを備えた有機ＥＬ素子である。The organic EL device of the SUMMARY OF THE INVENTION This invention includes a glass or quartz, transparent electrode formed of a transparent electrode material 2 such as ITO or SnO on the surface of a transparent substrate such as a resin, the transparent electrode And a back electrode made of Al, Li, Cs, or the like, which is formed on the light emitting layer and is opposed to the transparent electrode. The organic EL device is provided with a conductor pattern of a conductor embedded in the surface of the transparent substrate and in contact with the transparent electrode along the pattern of the transparent electrode.
【０００９】また、上記透明電極はストライプ状に形成
され、上記導体パターンは、上記透明電極に沿ってスト
ライプ状に設け、複数の組毎に外部の駆動回路に接続さ
れるものである。上記透明基板の表面に透明絶縁体層を
設け、この透明絶縁体層に、上記透明電極の各発光画素
に対応して開口部を設け、この開口部により上記導体パ
ターンと上記透明電極とを接続したものである。The transparent electrode is formed in a stripe shape, and the conductor pattern is provided in a stripe shape along the transparent electrode, and is connected to an external drive circuit for each of a plurality of sets. A transparent insulator layer is provided on the surface of the transparent substrate, an opening is provided in the transparent insulator layer corresponding to each luminescent pixel of the transparent electrode, and the opening connects the conductor pattern and the transparent electrode. It was done.
【００１０】上記発光層は光の３原色に対応した３発光
パターンを一組として上記透明電極に沿って複数本形成
され、上記導体パターンは上記発光層の発光パターンに
沿って複数形成されている。上記導体パターンは上記各
発光パターンの間の境界部に対応して位置している。さ
らに、光の３原色に対応した３発光パターンに対応した
上記複数の導体パターンの組は、各々１本の上記透明電
極に接続している。A plurality of the light emitting layers are formed along the transparent electrode as a set of three light emitting patterns corresponding to three primary colors of light, and a plurality of the conductor patterns are formed along the light emitting pattern of the light emitting layer. . The conductor pattern is located corresponding to a boundary between the light emitting patterns. Further, each of the sets of the plurality of conductor patterns corresponding to the three light emission patterns corresponding to the three primary colors of light is connected to one transparent electrode.
【００１１】また、光の３原色に対応した３発光パター
ンは、各々背面電極に接続し、各背面電極は、上記各３
発光パターン毎に背面導体に接続している。The three light emission patterns corresponding to the three primary colors of light are respectively connected to the back electrodes, and each back electrode is connected to the three
Each light emitting pattern is connected to the back conductor.
【００１２】上記複数の透明電極は、複数の組毎に外部
の駆動回路に接続され、上記透明電極の各組毎に、上記
背面電極は別々に上記外部の駆動回路に接続され、上記
透明電極側を走査電極として上記各組毎に上記透明電極
を走査して上記発光層に電圧をかけるものである。The plurality of transparent electrodes are connected to an external driving circuit for each of a plurality of sets, and the back electrodes are separately connected to the external driving circuit for each of the sets of the transparent electrodes. A voltage is applied to the light emitting layer by scanning the transparent electrode for each set with the side as a scanning electrode.
【００１３】[0013]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面に基づいて説明する。図１〜図４はこの発明の
有機ＥＬ素子の一実施形態を示すもので、この実施形態
のＥＬ素子は、ガラスや石英、樹脂等の透明基板１０の
一方の表面に、ＳｉＯ２等の透明絶縁体層１４を介し
て、所定のピッチでストライプ状の透明電極１２が設け
られている。透明電極１２はＩＴＯやＳｎＯ２等からな
り、図１、図２においては、紙面に直角方向に透明電極
１２が延びている。透明絶縁体層１４は、例えば、３３
０μｍピッチでストライプ状に形成され、その間は透明
基板１０が露出している。Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 to 4 show an embodiment of an organic EL device according to the present invention. The EL device according to this embodiment has a transparent substrate 10 made of glass, quartz, resin or the like on one surface of a transparent substrate such as SiO 2. Stripe-shaped transparent electrodes 12 are provided at a predetermined pitch via an insulator layer 14. The transparent electrode 12 is made of ITO or SnO 2 or the like, 1 and 2, the transparent electrode 12 in the direction perpendicular to the paper surface extends. The transparent insulator layer 14 is, for example, 33
The transparent substrate 10 is formed in a stripe pattern at a pitch of 0 μm, during which the transparent substrate 10 is exposed.
【００１４】透明基板１０の表面には、透明電極１２の
各々に対して、その両側縁部および透明電極１２の幅を
３等分する位置に２本の計４本の導体パターン１６が、
その表面に埋設されている。導体パターンは銅やアルミ
ニウム等の電気抵抗の小さい金属材料が良い。導体パタ
ーン１６は透明基板１０の周縁部で、外部に接続される
配線パターンとして用いられる。On the surface of the transparent substrate 10, a total of four conductor patterns 16 are provided at each side edge of the transparent electrode 12 and at a position where the width of the transparent electrode 12 is divided into three equal parts.
It is buried on its surface. The conductor pattern is preferably made of a metal material having low electric resistance, such as copper or aluminum. The conductor pattern 16 is used at the periphery of the transparent substrate 10 as a wiring pattern connected to the outside.
【００１５】ここで、透明基板が０．５ｍｍ厚で、３３
０μｍピッチの透明電極１２のストライプパターンと
し、この表示装置の画素ピッチも３３０μｍとすると、
これらの寸法は、例えば透明電極１２の幅が３００μ
ｍ、導体パターン１６の幅が２０μｍ、隣り合う透明電
極１２間の間隔が約３０μｍ、その下方の導体パターン
同士の間隔が１０μｍとなる。導体パターン１６の透明
基板１０表面からの深さは、適宜設定し得るが、例えば
４μｍ程度である。透明電極１２は、適宜５００Å程度
の厚さに形成されている。Here, when the transparent substrate is 0.5 mm thick,
Assuming that the transparent electrode 12 has a stripe pattern of 0 μm pitch and the pixel pitch of this display device is also 330 μm,
These dimensions are, for example, such that the width of the transparent electrode 12 is 300 μm.
m, the width of the conductor pattern 16 is 20 μm, the interval between the adjacent transparent electrodes 12 is about 30 μm, and the interval between the conductor patterns below it is 10 μm. The depth of the conductor pattern 16 from the surface of the transparent substrate 10 can be appropriately set, and is, for example, about 4 μm. The transparent electrode 12 is appropriately formed to a thickness of about 500 °.
【００１６】透明電極１２およびその間に露出した透明
絶縁体層１４には、銅フタロシアニン（ＣｕＰｃ）等の
バッファー層１５を介して発光層１８が積層されてい
る。発光層１８は、５００Å程度の厚さのホール輸送材
料２０、及び５００Å程度の厚さの電子輸送材料２２か
らなる。ホール輸送材料２０は、透明電極１２およびそ
の間に露出した透明絶縁体層１４の全面に積層されてい
る。A light emitting layer 18 is laminated on the transparent electrode 12 and the transparent insulator layer 14 exposed between the transparent electrodes 12 via a buffer layer 15 such as copper phthalocyanine (CuPc). The light emitting layer 18 is composed of a hole transporting material 20 having a thickness of about 500 ° and an electron transporting material 22 having a thickness of about 500 °. The hole transport material 20 is laminated on the entire surface of the transparent electrode 12 and the transparent insulator layer 14 exposed therebetween.
【００１７】また、電子輸送材料２２は、光の３原色に
対応した３発光パターンを一組として、透明電極１２に
沿って複数本形成されている。電子輸送材料２２は各透
明電極１２に対応して３本の発光パターン２２Ｒ，２２
Ｂ，２２Ｇが各々わずかに間隔を空けてストライプ状に
形成されている。A plurality of electron transporting materials 22 are formed along the transparent electrode 12 as a set of three light emitting patterns corresponding to the three primary colors of light. The electron transporting material 22 includes three light emitting patterns 22R and 22 corresponding to each transparent electrode 12.
B and 22G are each formed in a stripe shape at a slight interval.
【００１８】ここで、発光層１８は、母体材料のうちホ
ール輸送材料２０としては、α−ＮＰＤ、トリフェニル
ジアミン誘導体（ＴＰＤ）、ヒドラゾン誘導体、アリー
ルアミン誘導体等がある。また、電子輸送材料２２の赤
色発光パターン２２ＲとしてはＤＣＭ、青色発光パター
ン２２Ｂとしては、ジスチリルビフェニル誘導体（ＤＰ
ＶＢｉ）、緑色発光パターン２２Ｇとしてはアルミキノ
リール錯体（Ａｌｑ3）等の有機ＥＬ発光材料を使用す
る。さらに適宜の発光材料を混合しても良い。Here, the light emitting layer 18 includes α-NPD, triphenyldiamine derivative (TPD), hydrazone derivative, arylamine derivative and the like as the hole transporting material 20 in the base material. The red emission pattern 22R of the electron transport material 22 is DCM, and the blue emission pattern 22B is a distyrylbiphenyl derivative (DP
VBi), an organic EL light emitting material such as an aluminum quinolyl complex (Alq3) is used as the green light emitting pattern 22G. Further, an appropriate light emitting material may be mixed.
【００１９】光の３原色に対応した３発光パターン２２
Ｒ，２２Ｂ，２２Ｇには、各々背面電極２４が積層され
ている。背面電極２４は、図４に示すように、各３発光
パターン２２Ｒ，２２Ｂ，２２Ｇ毎に独立して積層され
ているとともに、透明電極１２の長手方向に沿った１画
素毎の区切りである、透明絶縁体層１４の区切り毎に独
立して設けられている。従って、背面電極２４は、３発
光パターン２２Ｒ，２２Ｂ，２２Ｇ毎の１発光画素毎に
独立に形成されている。背面電極２４は、Ａｌ，Ｌｉ，
Ａｇ，Ｍｇ，Ｉｎ，Ｃｓ等を含む金属薄膜からなる。Three light emission patterns 22 corresponding to three primary colors of light
A back electrode 24 is laminated on each of R, 22B and 22G. As shown in FIG. 4, the back electrode 24 is laminated independently for each of the three light emitting patterns 22R, 22B, and 22G, and is a transparent portion that is a partition for each pixel along the longitudinal direction of the transparent electrode 12. It is provided independently for each partition of the insulator layer 14. Therefore, the back electrode 24 is formed independently for each light-emitting pixel in each of the three light-emitting patterns 22R, 22B, and 22G. The back electrode 24 is made of Al, Li,
It is made of a metal thin film containing Ag, Mg, In, Cs and the like.
【００２０】背面電極２４およびその間の発光層１８に
は、ＳｉＯ等の絶縁層２６が全面に積層されている。絶
縁層２６には、各背面電極２４の独立した画素毎に透孔
２８が形成され、この透孔２８を介して、各３発光パタ
ーン２２Ｒ，２２Ｂ，２２Ｇに対して直交した背面導体
３０が背面電極２４に接続している。従って、背面導体
３０は透明絶縁体層１４毎に３本形成され、この各３本
の背面導体３０は各々光りの３原色の各発光パターン２
２Ｒ，２２Ｂ，２２Ｇの一素毎に各々透孔２８を介して
背面電極２４に接続している。An insulating layer 26 such as SiO is laminated on the entire surface of the back electrode 24 and the light emitting layer 18 therebetween. In the insulating layer 26, a through hole 28 is formed for each independent pixel of each back electrode 24. Through the through hole 28, a back conductor 30 orthogonal to each of the three light emitting patterns 22R, 22B, 22G is formed on the back surface. Connected to electrode 24. Accordingly, three back conductors 30 are formed for each transparent insulator layer 14, and each of the three back conductors 30 is provided with a respective light emitting pattern 2 of three primary colors of light.
Each element of 2R, 22B, 22G is connected to the back electrode 24 through the through hole 28.
【００２１】この実施形態の有機ＥＬ素子の製造方法
は、平滑な透明基板１０の表面にフォトレジストを塗布
し、図３（Ａ）等に示すストライプ状の導体パターン１
６に対応するパターンのマスクにより露光して、この導
体パターン１６に対応する部分および引出線部分が露出
するようにし、フッ化水素酸等によりエッチングを行っ
て、図１（Ａ）に示すストライプ状の溝３２を形成す
る。そして、基板１０を洗浄し、無電解銅メッキを０．
５μｍ程度溝３２内面に施し、フォトレジストを剥離
し、電気メッキにより４μｍの厚さに銅による導体パタ
ーン１６を形成する。In the method of manufacturing an organic EL device according to this embodiment, a photoresist is applied to the surface of a smooth transparent substrate 10 and a stripe-shaped conductive pattern 1 shown in FIG.
Exposure is performed using a mask having a pattern corresponding to pattern No. 6 so that a portion corresponding to the conductor pattern 16 and a lead line portion are exposed, and etching is performed using hydrofluoric acid or the like to form a stripe pattern shown in FIG. Is formed. Then, the substrate 10 is washed, and electroless copper plating is applied to the substrate 10.
The photoresist is peeled off by about 5 μm on the inner surface of the groove 32, and the conductive pattern 16 made of copper is formed to a thickness of 4 μm by electroplating.
【００２２】この後、透明基板１０を真空装置内にセッ
トし、図１（Ｂ）に示すように、透明絶縁体層１４を蒸
着する。このとき、直径３０μｍの単繊維ワイヤ等によ
りワイヤマスク３４を介して蒸着する。ワイヤマスク３
４は、例えば３３０μｍピッチにマスクフレームに配置
し、図３に示すように、透明絶縁体層１４の形成されて
いない開口部である境界部３６を透明基板１０上に形成
する。Thereafter, the transparent substrate 10 is set in a vacuum device, and a transparent insulator layer 14 is deposited as shown in FIG. At this time, vapor deposition is performed through a wire mask 34 using a single fiber wire or the like having a diameter of 30 μm. Wire mask 3
4 is disposed on a mask frame at a pitch of, for example, 330 μm, and forms a boundary portion 36 as an opening where the transparent insulator layer 14 is not formed on the transparent substrate 10 as shown in FIG.
【００２３】次に、図１（Ｃ）に示すように、ＩＴＯ等
の透明電極材料を蒸着等の真空薄膜形成技術により設け
る。このとき、透明電極１２は、３００μｍの幅で３０
μｍの間隔を空けて複数本形成されるように、ワイヤマ
スク３４と同様のワイヤマスク３６をワイヤマスク３４
と直交する方向に配置して蒸着する。ワイヤマスク３６
は、２本の近接した導体パターン１６の上方に位置する
ようにし、透明電極１２の両側縁部に対応して、導体パ
ターン１６が各々位置する。また、透明電極１２の幅方
向に３等分する２点に沿って、２本の導体パターン１６
が位置している。Next, as shown in FIG. 1C, a transparent electrode material such as ITO is provided by a vacuum thin film forming technique such as vapor deposition. At this time, the transparent electrode 12 has a width of 300 μm and a width of 30 μm.
A wire mask 36 similar to the wire mask 34 is formed so that a plurality of wires are formed at intervals of μm.
And vapor deposition is performed in a direction perpendicular to the above. Wire mask 36
Are positioned above two adjacent conductor patterns 16, and the conductor patterns 16 are respectively located corresponding to both side edges of the transparent electrode 12. Further, two conductor patterns 16 are formed along two points equally divided into three in the width direction of the transparent electrode 12.
Is located.
【００２４】次に、図１（Ｄ）に示すように、透明電極
１２の表面に、５００〜１０００Åの厚さのバッファー
層１５を全面に蒸着し、その後ホール輸送材料２０を２
５０〜５００Åの厚さに蒸着する。Next, as shown in FIG. 1 (D), a buffer layer 15 having a thickness of 500 to 1000.degree.
Deposit to a thickness of 50 to 500 °.
【００２５】この後、図２（Ａ）に示すように、電子輸
送材料２２を蒸着する。電子輸送材料２２の蒸着は、各
発光パターン２２Ｒ，２２Ｂ，２２Ｇを順に蒸着する。
蒸着方法は、図２（Ａ）に示すように、３００μｍの幅
内に所定の間隔を空けて３本の発光パターン２２Ｒ，２
２Ｂ，２２Ｇを形成するスリット３８を３３０μｍピッ
チで形成したマスク４０により各発光パターン２２Ｒ，
２２Ｂ，２２Ｇを順に蒸着する。発光パターン２２Ｒ，
２２Ｂ，２２Ｇの形成に際して，スリット３８の位置を
１００μｍづつ平行移動させて蒸着すれば良い。Thereafter, as shown in FIG. 2A, an electron transporting material 22 is deposited. When the electron transport material 22 is deposited, the light emitting patterns 22R, 22B, and 22G are sequentially deposited.
As shown in FIG. 2 (A), the three light emitting patterns 22R, 2R are formed at a predetermined interval within a width of 300 μm.
Each light emitting pattern 22R, 22R, 2G is formed by a mask 40 in which slits 38 for forming 2B, 22G are formed at a 330 μm pitch.
22B and 22G are sequentially deposited. Light emitting pattern 22R,
In forming the layers 22B and 22G, the positions of the slits 38 may be moved in parallel by 100 μm to perform vapor deposition.
【００２６】そして、図４に示すように、各画素毎に３
原色の発光画素が独立した状態で蒸着されるように開口
した孔を有するマスクを用いて、図２（Ｂ）に示すよう
に、背面電極２４を蒸着する。さらに、背面電極２４お
よび各背面電極２４間の発光層１８に、絶縁層２６を積
層する。このとき、図２（Ｃ）に示すように、例えば各
発光パターン２２Ｒ，２２Ｂ，２２Ｇに沿ったワイヤマ
スク４２を介して一回ＳｉＯを蒸着し、この後図２
（Ｃ）および図４に示すように、発光パターンに対して
４５度の方向で各画素を１回横切るピッチのワイヤマス
ク４４により、再びＳｉＯを蒸着する。すると、図４に
示すように、ワイヤマスク４２，４４の交点で、各発光
パターン２２Ｒ，２２Ｂ，２２Ｇの各画素毎に、各３原
色の画素毎の透孔２８が形成される。Then, as shown in FIG.
As shown in FIG. 2B, a back electrode 24 is deposited by using a mask having holes opened so that primary color light emitting pixels are deposited independently. Further, an insulating layer 26 is laminated on the back electrode 24 and the light emitting layer 18 between the back electrodes 24. At this time, as shown in FIG. 2C, for example, SiO is vapor-deposited once through a wire mask 42 along each of the light emitting patterns 22R, 22B, 22G, and thereafter, as shown in FIG.
As shown in FIG. 4C and FIG. 4, SiO is vapor-deposited again by a wire mask 44 having a pitch crossing each pixel once in a direction of 45 degrees with respect to the light emission pattern. Then, as shown in FIG. 4, at the intersections of the wire masks 42 and 44, the through holes 28 are formed for each pixel of each of the three primary colors for each pixel of each of the light emitting patterns 22R, 22B and 22G.
【００２７】この後、図２（Ｄ）および図４に示すよう
に、Ａｌ等の背面導体３０を７５０〜１０００Åの厚さ
に各々ストライプ状にマスク蒸着する。背面導体３０
は、１画素当たりＲＧＢの３本が各々独立に形成され、
透孔２８を介して、各色の画素毎に背面電極２４に接続
する。Thereafter, as shown in FIG. 2D and FIG. 4, a back conductor 30 of Al or the like is vapor-deposited in the form of a stripe by masking to a thickness of 750 to 1000 °. Back conductor 30
In each pixel, three RGB pixels are independently formed,
Each through-hole 28 is connected to the back electrode 24 for each pixel of each color.
【００２８】そして，この透明基板１０条の発光部部を
乾燥窒素雰囲気中で乾燥剤を入れて密封する。Then, the light emitting portion of the transparent substrate 10 is sealed with a desiccant in a dry nitrogen atmosphere.
【００２９】この実施形態のＥＬ素子の駆動方法は、表
面側の透明電極に導体パターン１６が接続しているの
で、導体パターン１６を走査電極として外部の駆動回路
に接続する。そして、例えば、２５６×２５６ドットの
カラー表示を行う場合、透明電極が２５６本であり、各
ドットの発光時間を長くするため２組に分けて１２８本
ずつの組にして各組毎に走査する。このとき、背面電極
２４では１２８本づつの透明電極１２に対応して、各々
背面導体３０を設ける。したがって、背面導体３０の本
数は、１２８本の透明電極の各組毎に各々２５６ドット
×３原色＝７６８本必要となる。背面導体３０は、表示
装置の背面側であるので、背面導体の本数が増えても処
理可能である。In the EL element driving method of this embodiment, since the conductor pattern 16 is connected to the transparent electrode on the front side, the conductor pattern 16 is connected to an external drive circuit as a scanning electrode. For example, when performing a color display of 256 × 256 dots, the number of transparent electrodes is 256, and each set is scanned in 128 sets in two sets in order to lengthen the emission time of each dot. . At this time, in the back electrode 24, a back conductor 30 is provided corresponding to each of the 128 transparent electrodes 12. Therefore, the number of back conductors 30 requires 256 dots × 3 primary colors = 768 for each set of 128 transparent electrodes. Since the back conductor 30 is on the back side of the display device, it can be processed even if the number of back conductors increases.
【００３０】背面導体３０と外部の駆動回路との接続
は、例えばフレキシブル基板の端子を、異方性導電体を
介して接続する。また、フレキシブル基板に駆動ＩＣ等
を予め取り付けておくことにより作業をより効率的に行
うことができる。The connection between the back conductor 30 and an external drive circuit is made, for example, by connecting terminals of a flexible substrate via an anisotropic conductor. Further, by attaching a drive IC or the like to the flexible substrate in advance, the work can be performed more efficiently.
【００３１】この実施形態のＥＬ素子によれば、透明電
極１２に沿って導体パターン１６が形成され、透明電極
１２の各部位までの抵抗値を低い値にすることができ
る。したがって、透明電極１２側を走査電極とし、背面
電極２４側には配線を多く設けることができ、画素数の
多い表示装置においても、分割走査等により発光時間の
長い表示装置を提供することができる。According to the EL element of this embodiment, the conductor pattern 16 is formed along the transparent electrode 12, and the resistance value of each part of the transparent electrode 12 can be reduced. Therefore, the transparent electrode 12 side can be used as a scanning electrode and the back electrode 24 side can be provided with a large number of wirings. Even in a display device having a large number of pixels, a display device having a long light emission time can be provided by divided scanning or the like. .
【００３２】なおこの発明の有機ＥＬ素子は、上記実施
形態に限定されるものではなく、透明電極に接した導体
パターンは１本でも良く、背面導体の形成も適宜の構造
が可能である。また背面導体と背面電極の接続構造は適
宜設定可能であり、マスク蒸着のマスクの配置や形状も
上記実施形態以外に、穴明きマスクや、格子状マスク等
により形成可能である。また、透明絶縁層は、ガラス等
の透明基板表面の汚染やその他の悪影響を避けるために
用いることが好ましいが、必ずしも設けなくても良く、
透明基板表面の状態が良い場合等においては設けないこ
ともある。The organic EL device of the present invention is not limited to the above embodiment, and the number of conductor patterns in contact with the transparent electrode may be one, and the back conductor may be formed in an appropriate structure. Further, the connection structure between the back conductor and the back electrode can be set as appropriate, and the arrangement and shape of the mask for mask evaporation can be formed by a perforated mask, a lattice mask, or the like in addition to the above embodiment. Further, the transparent insulating layer is preferably used to avoid contamination and other adverse effects on the surface of the transparent substrate such as glass, but may not necessarily be provided.
It may not be provided when the surface of the transparent substrate is in good condition.
【００３３】[0033]
【発明の効果】この発明の有機ＥＬ素子は、透明電極の
抵抗値をきわめて小さくすることができ、全体として均
一で明るい画面を形成することができる。さらに、透明
電極側で表示のための走査が可能であり、背面電極側に
複雑な配線を形成することができ、より大きく高精細
で、明るい画面を可能にする。According to the organic EL device of the present invention, the resistance value of the transparent electrode can be extremely reduced, and a uniform and bright screen can be formed as a whole. Further, scanning for display can be performed on the transparent electrode side, and complicated wiring can be formed on the back electrode side, thereby enabling a larger, higher definition, and bright screen.
【図１】この発明の第一実施形態の有機ＥＬ素子の製造
工程を示す部分縦断面図である。FIG. 1 is a partial longitudinal sectional view showing a manufacturing process of an organic EL device according to a first embodiment of the present invention.
【図２】この発明の第一実施形態の有機ＥＬ素子の次の
製造工程を示す部分縦断面図である。FIG. 2 is a partial longitudinal sectional view showing a next manufacturing step of the organic EL device according to the first embodiment of the present invention.
【図３】この発明の第一実施形態の有機ＥＬ素子の透明
絶縁体層と透明電極および導体パターンを示す部分平面
図（Ａ）とＢ−Ｂ線断面図（Ｂ）である。FIG. 3 is a partial plan view (A) showing a transparent insulator layer, a transparent electrode and a conductor pattern of the organic EL element of the first embodiment of the present invention, and a sectional view taken along the line BB (B).
【図４】この発明の第一実施形態の有機ＥＬ素子の発光
パターンと背面電極および背面導体を示す部分平面図で
ある。FIG. 4 is a partial plan view showing a light emitting pattern, a back electrode, and a back conductor of the organic EL element according to the first embodiment of the present invention.
１０ 透明基板 １２ 透明電極 １４ 透明絶縁体層 １５ バッファー層 １６ 導体パターン １８ 発光層 ２０ ホール輸送材料 ２２ 電子輸送材料 ２４ 背面電極 ２８ 透孔 ３０ 背面導体 DESCRIPTION OF SYMBOLS 10 Transparent substrate 12 Transparent electrode 14 Transparent insulator layer 15 Buffer layer 16 Conductive pattern 18 Light emitting layer 20 Hole transport material 22 Electron transport material 24 Back electrode 28 Through hole 30 Back conductor
───────────────────────────────────────────────────── フロントページの続き (72)発明者 福本 滋 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 佐藤 好雄 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 女川 博義 富山県富山市有沢77−２ Ｆターム(参考） 3K007 AB00 AB05 BA07 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA00 FA01 FA03 5G307 FA01 FA02 FB01 FC07 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Shigeru Fukumoto 3158 Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Inside Hokuriku Electric Industry Co., Ltd. Co., Ltd. (72) Inventor Hiroyoshi Onagawa 77-2 Arisawa, Toyama-shi, Toyama F-term (reference) 3K007 AB00 AB05 BA07 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA00 FA01 FA03 5G307 FA01 FA02 FB01 FC07
Claims (8)
り形成された透明電極と、上記透明電極に積層された有
機ＥＬ材料からなる発光層と、この発光層に積層され、
上記透明電極に対向して形成された背面電極とを有し、
上記透明基板表面に埋め込まれ、上記透明電極のパター
ンに沿って上記透明電極に接した導電体による導体パタ
ーンを備えたことを特徴とする有機ＥＬ素子。1. A transparent electrode formed of a transparent electrode material on a surface of a transparent substrate, a light emitting layer made of an organic EL material laminated on the transparent electrode, and a light emitting layer laminated on the light emitting layer.
A back electrode formed opposite to the transparent electrode,
An organic EL device comprising a conductor pattern of a conductor embedded in the surface of the transparent substrate and in contact with the transparent electrode along the pattern of the transparent electrode.
れ、上記導体パターンは上記透明電極に沿ってストライ
プ状に設けられ、上記透明電極は複数本の組毎に外部の
駆動回路に接続されるものであることを特徴とする請求
項１記載の有機ＥＬ素子。2. The transparent electrode is formed in a stripe shape, the conductor pattern is provided in a stripe shape along the transparent electrode, and the transparent electrodes are connected to an external drive circuit for each of a plurality of sets. The organic EL device according to claim 1, wherein
部の駆動回路に接続され、上記透明電極の各組毎に、上
記背面電極が別々に上記外部の駆動回路に接続され、上
記透明電極側を走査電極として上記各組毎に上記透明電
極を走査して上記発光層に電圧をかけることを特徴とす
る請求項２記載の有機ＥＬ素子。3. The plurality of transparent electrodes are connected to an external drive circuit for each of a plurality of sets, and the back electrodes are separately connected to the external drive circuit for each of the sets of transparent electrodes. 3. The organic EL device according to claim 2, wherein a voltage is applied to the light emitting layer by scanning the transparent electrodes for each set with the transparent electrode side as a scanning electrode.
け、この透明絶縁体層に、上記透明電極の各発光画素に
対応して開口部を設け、この開口部により上記導体パタ
ーンと上記透明電極とを接続したものであることを特徴
とする請求項１，２または３記載の有機ＥＬ素子。4. A transparent insulator layer is provided on a surface of the transparent substrate, and an opening is provided in the transparent insulator layer in correspondence with each light emitting pixel of the transparent electrode. 4. The organic EL device according to claim 1, wherein the device is connected to a transparent electrode.
光パターンを一組として上記透明電極に沿って複数本形
成され、上記導体パターンは上記発光層の発光パターン
に沿って複数形成されていることを特徴とする請求項
２，３または４記載の有機ＥＬ素子。5. A plurality of the light emitting layers are formed along the transparent electrode as a set of three light emitting patterns corresponding to three primary colors of light, and a plurality of the conductor patterns are formed along the light emitting pattern of the light emitting layer. 5. The organic EL device according to claim 2, wherein:
の間の境界部に対応して位置していることを特徴とする
請求項５記載の有機ＥＬ素子。6. The organic EL device according to claim 5, wherein the conductive pattern is located corresponding to a boundary between the light emitting patterns.
本の上記透明電極に接続していることを特徴とする請求
項５または６記載の有機ＥＬ素子。。7. A set of a plurality of conductor patterns each having one set
The organic EL device according to claim 5, wherein the organic EL device is connected to the transparent electrode of a book. .
ンは、各々背面電極に接続し、各背面電極は、上記各３
発光パターン毎に背面導体に接続していることを特徴と
する請求項５記載の有機ＥＬ素子。8. The three light-emitting patterns corresponding to the three primary colors of light are respectively connected to a back electrode, and each back electrode is connected to the three light-emitting patterns.
The organic EL device according to claim 5, wherein the organic EL device is connected to the back conductor for each light emitting pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11050902A JP2000252081A (en) | 1999-02-26 | 1999-02-26 | Organic el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11050902A JP2000252081A (en) | 1999-02-26 | 1999-02-26 | Organic el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000252081A true JP2000252081A (en) | 2000-09-14 |
Family
ID=12871695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11050902A Pending JP2000252081A (en) | 1999-02-26 | 1999-02-26 | Organic el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000252081A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001047322A1 (en) * | 1999-12-22 | 2001-06-28 | Sony Corporation | Organic electroluminescence display |
| JP2008277202A (en) * | 2007-05-03 | 2008-11-13 | Aitesu:Kk | Multilayer board and manufacturing method thereof |
| FR2924274A1 (en) * | 2007-11-22 | 2009-05-29 | Saint Gobain | SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND ITS MANUFACTURING |
-
1999
- 1999-02-26 JP JP11050902A patent/JP2000252081A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001047322A1 (en) * | 1999-12-22 | 2001-06-28 | Sony Corporation | Organic electroluminescence display |
| KR100845724B1 (en) * | 1999-12-22 | 2008-07-14 | 소니 가부시끼 가이샤 | Organic electroluminescence display |
| JP2008277202A (en) * | 2007-05-03 | 2008-11-13 | Aitesu:Kk | Multilayer board and manufacturing method thereof |
| WO2008139934A1 (en) * | 2007-05-03 | 2008-11-20 | International Test And Engineering Services Co., Ltd. | Multilayer board and method for manufacturing the same |
| FR2924274A1 (en) * | 2007-11-22 | 2009-05-29 | Saint Gobain | SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND ITS MANUFACTURING |
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