JP2000235995A - Ball forming method at wire bonding - Google Patents
Ball forming method at wire bondingInfo
- Publication number
- JP2000235995A JP2000235995A JP11035284A JP3528499A JP2000235995A JP 2000235995 A JP2000235995 A JP 2000235995A JP 11035284 A JP11035284 A JP 11035284A JP 3528499 A JP3528499 A JP 3528499A JP 2000235995 A JP2000235995 A JP 2000235995A
- Authority
- JP
- Japan
- Prior art keywords
- ball
- wire
- length
- forming
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85095—Temperature settings
- H01L2224/85099—Ambient temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ワイヤボンディン
グにおけるボール形成方法に関する。The present invention relates to a ball forming method in wire bonding.
【０００２】[0002]
【従来の技術】ワイヤボンディングにおけるボール形成
は、キャピラリの下端より延在したワイヤの先端と放電
電極間に高電圧を印加して放電させ、ワイヤの先端にボ
ールを形成する。2. Description of the Related Art In ball formation in wire bonding, a high voltage is applied between a tip end of a wire extending from a lower end of a capillary and a discharge electrode to cause a discharge to form a ball at the tip end of the wire.
【０００３】従来、前記ボール形成は、一般にクリーン
ルーム内の大気中及び室温（２０〜２５℃前後）中で放
電して行っている。なお、この種のボール形成方法とし
て、例えば特開平１０−１２５７１４号公報があげられ
る。Conventionally, the ball formation is generally performed by discharging in the air in a clean room and at room temperature (around 20 to 25 ° C.). As a ball forming method of this type, for example, Japanese Patent Application Laid-Open No. H10-125714 is cited.
【０００４】また圧縮空気の雰囲気中でボールを形成
し、ボールを冷却して固めるものも提供されている。な
お、この種のボール形成方法として、例えば特開昭５９
−１７２５４号公報があげられる。[0004] Further, there has been provided an apparatus in which a ball is formed in an atmosphere of compressed air, and the ball is cooled and solidified. Incidentally, as a ball forming method of this kind, for example, Japanese Unexamined Patent Publication No.
No.-17254.
【０００５】[0005]
【発明が解決しようとする課題】室温のままのワイヤに
放電してボールを形成すると、溶けたボールの熱はワイ
ヤ側へ伝導して逃げる他に、ボールからの放射によって
失われる。その結果、ボールは外側から固化し始め、ボ
ール内部は相対的にゆっくり固化することになる。これ
により、ゆっくり固化した内部が軟らかく、周りにそれ
より硬い皮を被った状態となることは明らかである。こ
のようなボールをボンディングすると、ボンディング品
質が低下すると共に、図４に示すように、パッド９にボ
ンディングした圧着ボール３ｅが変形する。この変形し
た圧着ボール３ｅの径は、真円に近い圧着ボール径と比
較してボール径が大きくなり、かつバラツキが大きい。
このため、パッド間隔が約５０〜６０μｍというファイ
ンピッチのボンディングに対応するには非常に困難が伴
う。なお、図４において、２はワイヤを示す。When a ball is formed by discharging a wire kept at room temperature, the heat of the melted ball is lost due to radiation from the ball, in addition to conduction to the wire side to escape. As a result, the ball begins to solidify from the outside and the inside of the ball solidifies relatively slowly. This clearly shows that the slowly solidified interior is soft and has a harder skin around it. When such a ball is bonded, the bonding quality is degraded, and the press-bonded ball 3e bonded to the pad 9 is deformed as shown in FIG. The diameter of the deformed pressure-bonded ball 3e is larger than the diameter of the pressure-bonded ball close to a perfect circle, and the variation is large.
For this reason, it is very difficult to cope with the bonding at a fine pitch where the pad interval is about 50 to 60 μm. In FIG. 4, reference numeral 2 denotes a wire.
【０００６】ボールを圧縮空気で冷却する方法は、ボー
ル自体を冷やすので、速やかな固化は実現できる。しか
し、ボールが外周から速やかに固化するので、外周に硬
い皮ができた状態となり、ボンディング時は風船を板に
押し付けたようになり、接触面の円心方向の全スクラブ
が得られないためボンディングが困難となる。The method of cooling a ball with compressed air cools the ball itself, so that rapid solidification can be realized. However, since the ball solidifies quickly from the outer circumference, a hard skin is formed on the outer circumference, and the balloon is pressed against the plate at the time of bonding. Becomes difficult.
【０００７】本発明の課題は、ボンディング品質が向上
すると共に、ボンディング後の圧着ボールの外周形状を
より真円に近づけることができるワイヤボンディングに
おけるボール形成方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a ball forming method in wire bonding which can improve the bonding quality and make the outer peripheral shape of the pressure-bonded ball after bonding closer to a perfect circle.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
の本発明の第１の手段は、キャピラリの下端より延在し
たワイヤの先端と放電電極間に高電圧を印加して放電さ
せ、ワイヤの先端にボールを形成するワイヤボンディン
グにおけるボール形成方法において、前記キャピラリの
下端より延在したワイヤの長さを所定の大きさのボール
を形成する長さより長くし、該ワイヤからボール固化に
必要な熱を取るべく冷却し、ワイヤの先端と放電電極間
に高電圧を印加してボールを形成することを特徴とす
る。According to a first aspect of the present invention, a high voltage is applied between a tip of a wire extending from a lower end of a capillary and a discharge electrode to discharge the wire. In the ball forming method in wire bonding in which a ball is formed at the tip of the wire, the length of the wire extending from the lower end of the capillary is longer than the length of forming a ball of a predetermined size, and the wire required for solidifying the ball from the wire is formed. It is characterized by cooling to take heat, applying a high voltage between the tip of the wire and the discharge electrode to form a ball.
【０００９】上記課題を解決するための本発明の第２の
手段は、前記第１の手段において、前記ワイヤの冷却
は、ボール形成長さワイヤ部分より上方のワイヤ部分に
気体を送風して放熱を行うことを特徴とする。A second means of the present invention for solving the above-mentioned problems is that, in the first means, the cooling of the wire is performed by blowing gas to a wire portion above the ball forming length wire portion to radiate heat. Is performed.
【００１０】[0010]
【発明の実施の形態】本発明の一実施の形態を図１乃至
図３により説明する。図１に示すように、ボール形成に
おいて、キャピラリ１の下端から延在したワイヤ２のテ
ール長Ｌ１は、所定の大きさのボール３ｃを形成するボ
ール形成長さＬ２より長くなっている。この状態におい
ては、クランパ４は閉じている。放電電極５の上方に
は、キャピラリ１の下端から前記ボール形成長さＬ２の
上端までのワイヤ２の部分（長さＬ３の部分）に気体、
例えばエア６を吹き付けるエアパイプ７が配設されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 1, in ball formation, the tail length L1 of the wire 2 extending from the lower end of the capillary 1 is longer than the ball formation length L2 forming the ball 3c of a predetermined size. In this state, the clamper 4 is closed. Above the discharge electrode 5, gas is applied to a portion of the wire 2 (a portion having a length L3) from a lower end of the capillary 1 to an upper end of the ball forming length L2.
For example, an air pipe 7 for blowing air 6 is provided.
【００１１】そこで、図１に示すように、キャピラリ１
及びクランパ４が下降してワイヤ２の先端が放電電極５
の側方に位置すると、エアパイプ７からエア６がワイヤ
２の長さＬ３の部分に吹き付けられる。続いて放電電極
５による放電８が行われる。これにより、ワイヤ２は下
端部分から溶融してボール３ａ、３ｂを形成して所定の
大きさのボール３ｃとなる。Therefore, as shown in FIG.
And the clamper 4 descends so that the tip of the wire 2 is
, The air 6 is blown from the air pipe 7 to the length L3 of the wire 2. Subsequently, a discharge 8 by the discharge electrode 5 is performed. As a result, the wire 2 is melted from the lower end portion to form the balls 3a and 3b, and becomes the ball 3c of a predetermined size.
【００１２】このボール３ａ、３ｂ、３ｃの形成時にお
いては、ワイヤ２の長さＬ３の部分は、エア６によって
冷却されている。このため、この状態で放電８を発生さ
せてボール３ｃを形成させると、ボール３ａ、３ｂ、３
ｃが固化する際の熱をボール３ａ、３ｂ、３ｃより上方
のワイヤ２側に導く。これにより、ボール３ａ、３ｂ、
３ｃの上面より固化がスタートし、ボール３ａ、３ｂ、
３ｃの下面は上面に対して軟らかくなると共に、ボール
３ｃの上面に半球状の型が形成されることになる。即
ち、ワイヤ２を低温に保つことにより、熱は速やかにワ
イヤ２側に吸い取られ、ボール３ｃは内部が下端より先
に固化するので、皮を被った状態を防ぐことができる。When the balls 3a, 3b and 3c are formed, the length L3 of the wire 2 is cooled by the air 6. Therefore, when the discharge 8 is generated in this state to form the ball 3c, the balls 3a, 3b, 3
The heat at the time of solidification of c is conducted toward the wire 2 above the balls 3a, 3b and 3c. Thereby, the balls 3a, 3b,
Solidification starts from the upper surface of 3c, and balls 3a, 3b,
The lower surface of 3c becomes softer than the upper surface, and a hemispherical mold is formed on the upper surface of ball 3c. That is, by keeping the wire 2 at a low temperature, the heat is quickly absorbed by the wire 2 and the inside of the ball 3c is solidified before the lower end, so that the ball 3c can be prevented from being covered.
【００１３】ボール形成後にクランパ４が開き、図２
（ａ）に示すように、ワイヤ２に掛けられたバックテン
ションにより、ボール３ｃはキャピラリ１のチャンファ
部１ａで保持される。続いて図２（ｂ）に示すように、
キャピラリ１が下降して第１ボンド点であるパッド９に
ボール３ｃは接触する。次にキャピラリ１にボンディン
グ荷重が掛けられた状態で超音波が印加される。これに
より、ボール３ｃはパッド９にボンディングされ、圧着
ボール３ｄが得られる。After the ball is formed, the clamper 4 opens, and FIG.
As shown in (a), the ball 3c is held by the chamfer part 1a of the capillary 1 by the back tension applied to the wire 2. Subsequently, as shown in FIG.
The capillary 3 descends and the ball 3c contacts the pad 9 which is the first bond point. Next, an ultrasonic wave is applied while a bonding load is applied to the capillary 1. As a result, the ball 3c is bonded to the pad 9, and the press-bonded ball 3d is obtained.
【００１４】前記したように、ボール３ｃは下面より上
面が硬く、上面部分は半球状の型に形成されているの
で、パッド９へのボンディング中のボール３ｃのはみ出
しは周囲均等になり、図３に示すように、圧着ボール３
ｄは真円に近い小径のボールとなる。このように、真円
に近い小径の圧着ボール３ｄを安定して得ることができ
るので、ファインピッチボンディングにおいてより一層
の効果を発揮する。As described above, since the upper surface of the ball 3c is harder than the lower surface and the upper surface is formed in a hemispherical mold, the protrusion of the ball 3c during bonding to the pad 9 becomes uniform around the periphery. As shown in FIG.
d is a small diameter ball close to a perfect circle. As described above, a small diameter crimped ball 3d close to a perfect circle can be stably obtained, so that a further effect is exhibited in fine pitch bonding.
【００１５】[0015]
【発明の効果】本発明によれば、キャピラリの下端より
延在したワイヤの長さを所定の大きさのボールを形成す
る長さより長くし、該ワイヤからボール固化に必要な熱
を取るべく冷却し、ワイヤの先端と放電電極間に高電圧
を印加してボールを形成するので、ボンディング品質が
向上すると共に、ボンディング後の圧着ボールの外周形
状をより真円に近づけることができる。According to the present invention, the length of the wire extending from the lower end of the capillary is made longer than the length for forming a ball of a predetermined size, and the wire is cooled to remove the heat necessary for solidifying the ball. Since a ball is formed by applying a high voltage between the tip of the wire and the discharge electrode, the bonding quality is improved, and the outer peripheral shape of the press-bonded ball after bonding can be made closer to a perfect circle.
【図１】本発明のボール形成方法の一実施の形態を示す
説明図である。FIG. 1 is an explanatory view showing one embodiment of a ball forming method of the present invention.
【図２】（ａ）（ｂ）は図１の続きの工程を示す説明図
である。FIGS. 2 (a) and 2 (b) are explanatory diagrams showing steps subsequent to FIG.
【図３】本発明のボール形成方法による圧着ボールを上
方より見た説明図である。FIG. 3 is an explanatory view of a press-bonded ball according to the ball forming method of the present invention as viewed from above.
【図４】従来のボール形成方法による圧着ボールを上方
より見た説明図である。FIG. 4 is an explanatory view of a press-bonded ball according to a conventional ball forming method as viewed from above.
１ キャピラリ ２ ワイヤ ３ｃ ボール ３ｄ 圧着ボール ５ 放電電極 ６ エア ７ エアパイプ ８ 放電 ９ パッド Ｌ１ テール長 Ｌ２ ボール形成長さ DESCRIPTION OF SYMBOLS 1 Capillary 2 Wire 3c Ball 3d Crimp ball 5 Discharge electrode 6 Air 7 Air pipe 8 Discharge 9 Pad L1 Tail length L2 Ball formation length
Claims (2)
先端と放電電極間に高電圧を印加して放電させ、ワイヤ
の先端にボールを形成するワイヤボンディングにおける
ボール形成方法において、前記キャピラリの下端より延
在したワイヤの長さを所定の大きさのボールを形成する
長さより長くし、該ワイヤからボール固化に必要な熱を
取るべく冷却し、ワイヤの先端と放電電極間に高電圧を
印加してボールを形成することを特徴とするワイヤボン
ディングにおけるボール形成方法。1. A ball forming method in wire bonding in which a high voltage is applied between a tip end of a wire extending from a lower end of a capillary and a discharge electrode to cause a discharge and form a ball at the tip end of the wire, wherein the lower end of the capillary is The length of the extended wire is made longer than the length for forming a ball of a predetermined size, the wire is cooled to take heat necessary for solidifying the ball, and a high voltage is applied between the tip of the wire and the discharge electrode. And forming a ball by wire bonding.
イヤ部分より上方のワイヤ部分に気体を送風して放熱を
行うことを特徴とするワイヤボンディングにおけるボー
ル形成方法。2. The method of forming a ball in wire bonding, wherein the wire is cooled by blowing gas to a wire portion above a wire portion having a ball forming length to radiate heat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11035284A JP2000235995A (en) | 1999-02-15 | 1999-02-15 | Ball forming method at wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11035284A JP2000235995A (en) | 1999-02-15 | 1999-02-15 | Ball forming method at wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000235995A true JP2000235995A (en) | 2000-08-29 |
Family
ID=12437486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11035284A Withdrawn JP2000235995A (en) | 1999-02-15 | 1999-02-15 | Ball forming method at wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000235995A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008140865A (en) * | 2006-11-30 | 2008-06-19 | Kaijo Corp | Method for forming free air ball, and wire bonding device |
| EP3158962A1 (en) | 2015-10-19 | 2017-04-26 | Biosense Webster (Israel) Ltd. | Preparation of micro-electrodes |
| US12108983B2 (en) | 2019-05-03 | 2024-10-08 | Biosense Webster (Israel) Ltd. | Device, system and method to ablate cardiac tissue |
-
1999
- 1999-02-15 JP JP11035284A patent/JP2000235995A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008140865A (en) * | 2006-11-30 | 2008-06-19 | Kaijo Corp | Method for forming free air ball, and wire bonding device |
| EP3158962A1 (en) | 2015-10-19 | 2017-04-26 | Biosense Webster (Israel) Ltd. | Preparation of micro-electrodes |
| CN106963366A (en) * | 2015-10-19 | 2017-07-21 | 韦伯斯特生物官能(以色列)有限公司 | The preparation of microelectrode |
| US10213856B2 (en) | 2015-10-19 | 2019-02-26 | Biosense Webster (Israel) Ltd. | Preparation of micro-electrodes |
| US11890690B2 (en) | 2015-10-19 | 2024-02-06 | Biosense Webster (Israel) Ltd. | Preparation of micro-electrodes |
| US12108983B2 (en) | 2019-05-03 | 2024-10-08 | Biosense Webster (Israel) Ltd. | Device, system and method to ablate cardiac tissue |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4976393A (en) | Semiconductor device and production process thereof, as well as wire bonding device used therefor | |
| JP2004221257A (en) | Wire bonding method and device thereof | |
| JPH08191114A (en) | Resin sealed semiconductor and manufacturing method thereof | |
| JP3349886B2 (en) | Method for forming two-stage protrusion-shaped bump of semiconductor device | |
| US5314842A (en) | Resin-sealed type semiconductor device and method for manufacturing the same | |
| JP2000235995A (en) | Ball forming method at wire bonding | |
| JP3129169B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3455126B2 (en) | Wire bonding method | |
| JP2006332152A (en) | Method of packaging semiconductor device | |
| JPH0794556A (en) | Wire bonding method | |
| JP3322642B2 (en) | Method for manufacturing semiconductor device | |
| JPH0530058B2 (en) | ||
| JPS63181455A (en) | Method for sealing ic package | |
| JPH0745735A (en) | Semiconductor device | |
| JP3391234B2 (en) | Bump forming capillary, bump forming apparatus and bump forming method | |
| JP3269398B2 (en) | Soldering method for work with bump | |
| JP3282932B2 (en) | Semiconductor device package and method of manufacturing the same | |
| JPH06196522A (en) | Formation of ball in metal wire | |
| JP2506152B2 (en) | Wire bonding method for coated wire | |
| JP2007027498A (en) | Method for manufacturing a semiconductor device and manufacturing equipment | |
| JP2000188303A (en) | Ball bonding method | |
| JP2822997B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH07283221A (en) | Bump forming method | |
| JPS6049641A (en) | Wire bonding device | |
| JPH01251628A (en) | Bonding equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20060509 |