JP2000232090A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000232090A5 JP2000232090A5 JP1999032279A JP3227999A JP2000232090A5 JP 2000232090 A5 JP2000232090 A5 JP 2000232090A5 JP 1999032279 A JP1999032279 A JP 1999032279A JP 3227999 A JP3227999 A JP 3227999A JP 2000232090 A5 JP2000232090 A5 JP 2000232090A5
- Authority
- JP
- Japan
- Prior art keywords
- zno
- passivation film
- based glass
- etching
- glass passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000011521 glass Substances 0.000 description 61
- 238000002161 passivation Methods 0.000 description 42
- 238000005530 etching Methods 0.000 description 38
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 238000004070 electrodeposition Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11032279A JP2000232090A (ja) | 1999-02-10 | 1999-02-10 | ガラスパッシベーション膜の除去方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11032279A JP2000232090A (ja) | 1999-02-10 | 1999-02-10 | ガラスパッシベーション膜の除去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000232090A JP2000232090A (ja) | 2000-08-22 |
| JP2000232090A5 true JP2000232090A5 (enExample) | 2005-06-09 |
Family
ID=12354549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11032279A Abandoned JP2000232090A (ja) | 1999-02-10 | 1999-02-10 | ガラスパッシベーション膜の除去方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000232090A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4816250B2 (ja) * | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
| JP2008047645A (ja) * | 2006-08-11 | 2008-02-28 | Tosoh Corp | 透明電極のエッチング液及びエッチング方法 |
| JP2008159814A (ja) * | 2006-12-22 | 2008-07-10 | Mitsui Mining & Smelting Co Ltd | 酸化亜鉛系薄膜用エッチャント及び酸化亜鉛系薄膜のパターニング方法 |
| JP5004885B2 (ja) * | 2008-07-15 | 2012-08-22 | スタンレー電気株式会社 | 半導体構造の加工方法 |
| CN112103197B (zh) * | 2020-11-09 | 2021-02-09 | 浙江里阳半导体有限公司 | 半导体分立器件的制造方法及其钝化装置 |
-
1999
- 1999-02-10 JP JP11032279A patent/JP2000232090A/ja not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4841021B2 (ja) | メサ構造を持つ半導体チップの製造方法 | |
| CN101124657B (zh) | 贴合晶圆的制造方法及贴合晶圆 | |
| US4179794A (en) | Process of manufacturing semiconductor devices | |
| US4965173A (en) | Metallizing process and structure for semiconductor devices | |
| JP2000232090A5 (enExample) | ||
| US4663820A (en) | Metallizing process for semiconductor devices | |
| JP2000232090A (ja) | ガラスパッシベーション膜の除去方法 | |
| JPH0130295B2 (enExample) | ||
| JPH0864557A (ja) | メサ型半導体素子の製造方法 | |
| JPS5950095B2 (ja) | 半導体装置の製造方法 | |
| US4214953A (en) | Process for making semiconductor devices passivated by an integrated heat sink | |
| JPS6113375B2 (enExample) | ||
| JPS6292340A (ja) | 半導体装置の製造方法 | |
| JPS6156617B2 (enExample) | ||
| JPH0427703B2 (enExample) | ||
| JPS5887817A (ja) | ガラス被覆半導体装置およびその製造方法 | |
| JPS618918A (ja) | 半導体電極の形成方法 | |
| JPH0228252B2 (enExample) | ||
| JPS6226574B2 (enExample) | ||
| JPS6384141A (ja) | 半導体装置の製造方法 | |
| JPH01108726A (ja) | 半導体装置の製造方法 | |
| JPS60257182A (ja) | 半導体装置の製造方法 | |
| JPS6367736A (ja) | 半導体基板の製造方法 | |
| JPS6279625A (ja) | 半導体装置の製造方法 | |
| JPS6051263B2 (ja) | 半導体装置の製造方法 |