JP2000216163A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable an SiN film formed at a low temperature to be modified by low-temperature annealing so as to simplify a manufacturing device system in structure, by a method wherein material gas is spouted out against a catalyst to be partially decomposed, and the SiN film is exposed to an atmosphere of active species generated by decomposition. SOLUTION: A gas feed pipe 18 with a nozzle and a tungsten catalyst 20 are arranged so as to confront a specimen 15, a shutter 23 is provided between them, an AC power is applied to the tungsten catalyst 20, and the tungsten catalyst 20 is kept at a temperature of 1800 to 1900 deg.C. Material gas 19 is spouted out against the tungsten catalyst 20 to come into contact with it, by which the material gas 19 is decomposed into active species such as radicals or the like, and the shutter 23 is opened to make the specimen 15 exposed to an atmosphere that contains the active species, by which a film is formed or subjected to an annealing treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device characterized by a heat treatment method for improving an interface state between a semiconductor substrate and a SiN film and a film quality of the SiN film. It relates to a manufacturing method.

[0002]

2. Description of the Related Art In recent years, higher integration of semiconductor integrated circuit devices,
With the advance of miniaturization, M which constitutes a semiconductor integrated circuit device
ISFETs (metal-insulator-semiconductor FETs) are also required to be miniaturized, and as the miniaturization requires a lower voltage, it is necessary to reduce the thickness of the gate insulating film. When a SiO ₂ film is used like the MISFET of the above, when the SiO ₂ film is thinned to about 4 nm,
In addition to the difficulty in maintaining the uniformity of the film thickness, a phenomenon such as an increase in leakage current and an impurity doped into the gate electrode penetrating into the channel region has become evident, which has seriously affected the characteristics of the MISFET. .

[0003] To solve such problems, as a gate insulating film, SiO ₂ film SiO ₂ film than the dielectric constant large silicon nitride film (SiN _x film in place of, the stoichiometric ratio basis Si ₃ N ₄ film), that is, application of a SiN film is being studied. That is, since the SiN film has a large relative dielectric constant,
This is because even if a SiN film having a thickness larger than that of the iO ₂ film is used, equivalent gate characteristics can be obtained.

As a conventional method for producing a SiN film, a direct nitridation method by thermal nitridation and a thermal CVD method are widely used. However, since all of these processes are high-temperature processes of 800 ° C. or more, these When a SiN film serving as a gate insulating film is formed by such a high-temperature process, impurities doped in a channel region for adjusting a threshold voltage _Vth are redistributed in a deposition process of the SiN film, so that a short channel The effect is deteriorated, that is, punch-through between the source and drain regions is induced. In addition, such a high-temperature process has a problem in that the wafer is warped against a recent increase in the diameter of the wafer, and the processing accuracy is reduced.

In view of such a problem of the high-temperature process, plasma CVD (PCVD), which is a low-temperature process, and JV
Attempts have been made to apply the D (Jet Vapor Deposition) method, for example, Yale University, Jet
Process Corp. Alternatively, Motorola has an EOT (Equivalent Oxide)
Thickness: equivalent oxide thickness), 2 to 5
Studies have been made on the formation of a SiN film having a thickness of nm by the JVD method. In particular, Motorola has conducted an application study on a 0.35 μm device and has shown good results. EOT (equivalent oxide film thickness) means relative permittivity of SOT.
This is the thickness of the insulating film calculated from the CV characteristics, assuming that it is 3.9, which is the same as the iO ₂ film.

However, the SiN film formed by the PCVD method or the JVD method does not have a very good film quality only by being deposited, and the J (current density) -corresponds to the I (current) -V (voltage) characteristic. In the E (electric field) characteristic, there is a problem that the current density J increases as the electric field E increases, that is, there is a problem that the leak current increases (for example, refer to the JE characteristic in FIG. 3 described later).

Therefore, in order to improve the film quality of such a low-temperature SiN film, N _{2 at} a high temperature of about 800 ° C.
Annealing needs to be performed in an atmosphere, resulting in a high-temperature process as a whole.

Further, in order to improve the quality of the low-temperature SiN film, introduction of nitrogen into the SiN film using a plasma process has been studied.
There is concern about damage to the film or damage to the silicon substrate.

On the other hand, as a method of forming an insulating film without causing such a high-temperature process or plasma damage, an insulating film is formed by a low-temperature process and then at a temperature of 400 to 700 ° C. in a gas atmosphere activated by a catalyst. Annealing has been proposed (for example, see Japanese Patent Application Laid-Open No. 8-78695).

In this proposal, a mesh catalyst is disposed in a reaction chamber for heat treatment or in a reaction chamber independent of the heat treatment, and the raw material gas is activated by permeating the mesh catalyst to activate the activated catalyst. Species, that is, radicals cause silicon—at the interface between the crystalline Si film and the silicon oxide film
A hydrogen bond (Si—H) is replaced with a silicon-nitrogen bond (Si≡
By replacing with N), the quality of the oxide film is to be improved, and the whole can be performed by a low-temperature process of 700 ° C. or less.

For example, in the above proposal, a thickness of 20 to 150 nm, for example, 1 to become a gate insulating film on a surface of a crystalline Si film constituting a TFT by a sputtering method.
After depositing a 00 nm silicon oxide film, 500-650 using N ₂ O activated by a platinum network serving as a catalyst.
By performing heat treatment at 1 ° C. for one hour, hydrogen in the silicon oxide film and at the interface between the silicon oxide film and the crystalline Si film is reduced by oxidation or nitridation to improve the film quality and interface characteristics of the silicon oxide film. Is disclosed.

In the above proposal, a 120-nm-thick silicon oxide film serving as a gate insulating film is deposited on the surface of a crystalline Si film constituting a TFT by ECR-CVD, and then Ti as a catalyst is adsorbed. The granulated or powdered silica gel activates NH ₃ diluted to 1 to 5% with Ar, anneals for 1 hour to nitride the silicon oxide film, and then activates N ₂ by the catalyst. It is disclosed that by performing heat treatment at 500 to 650 ° C. for 1 hour using O, the characteristics of the interface between the nitrided silicon oxide film and the crystalline Si film are improved.

[0013]

However, as described above,
When the PCVD method or the JVD method is used, low-temperature Si
In order to improve the film quality of the N film, it is necessary to perform annealing in a N ₂ atmosphere at a high temperature of about 800 ° C., and as a result, there is a problem that a high temperature process is required as a whole.

In the case of the above-mentioned low-temperature annealing method using a gas activated by a catalyst, a silicon oxide film having a considerably large thickness of about 100 nm is targeted. Extremely thin S of about 5 nm
It is unknown whether it can be applied for modifying the iN film, and
No specific requirements for that are disclosed.

Further, in this case, the PCVD method or the EC
The silicon oxide film deposited by the R-CVD method is subjected to a heat treatment at a temperature of 400 to 700 ° C. in another reaction chamber equipped with a catalyst, which complicates the configuration of a manufacturing apparatus system and is called a low-temperature process. However, there is a problem that a temperature of 400 ° C. or more is required.

Accordingly, the present invention provides an S
An object of the present invention is to modify an iN film by low-temperature annealing and to simplify the configuration of a manufacturing apparatus system.

[0017]

FIG. 1 is an explanatory view of the principle configuration of the present invention. Referring to FIG. 1, means for solving the problems in the present invention will be described. See FIG. 1 (1) In the method of manufacturing a semiconductor device according to the present invention, after depositing a SiN film 5 on a substrate 1, a source gas 2 is blown onto a catalyst 3 to contact the catalyst 3 with the source gas 2. At least a part of the source gas 2 is decomposed by the reaction, and the SiN film 5 is exposed to the atmosphere of the active species 4 generated by the decomposition.

Thus, the activated species 4 activated by the catalyst
Annealing can improve the interface of the base 1-SiN film 5 and improve the film quality of the SiN film 5 only by a low-temperature process, and particularly, the EOT is about 2 to 5 nm. This is effective in the case of the SiN film 5, and the characteristics of the MISFET using the extremely thin gate insulating film can be improved. In this case, the substrate 1 is a silicon substrate, a silicon deposition layer formed on the substrate,
Alternatively, it means a metal, and decomposing at least a part of the source gas may decompose a part of the source gas into N radicals, N ₂ radicals, or the like, or It means that all may be decomposed into N radicals and N ₂ radicals.

(2) The present invention is characterized in that in the above (1), NH ₃ is used as the source gas 2.

As described above, when annealing the SiN film 5, by using NH ₃ as the source gas 2,
Hydrogen in the iN film 5 or hydrogen at the interface between the substrate 1 and the SiN film 5 can be reduced, so that the film quality of the SiN film 5 can be improved and the interface state density can be reduced.

(3) The present invention is characterized in that, in the above (1) or (2), a resistance heating element is used as the catalyst 3.

As described above, by using a resistance heating element as the catalyst 3, the temperature of the catalyst 3 can be raised to a high temperature of about 1800 ° C.
_By bringing ₃ into contact, it is possible to increase the relative ratio of the active species of N, ie, the radical of a nitrogen atom, and the active species of N ₂ , ie, the radical of a nitrogen molecule. 5 and the substrate 1-Si
The effect of reducing the interface state density at the interface of the N film 5 can be obtained.

(4) The present invention is characterized in that in any one of the above (1) to (3), tungsten is used as the catalyst 3.

As the catalyst body 3 used for such a catalyst annealing, tungsten which withstands high temperatures, does not mix into the SiN film 5 due to decomposition of the catalyst body material, and whose surface is hardly deteriorated by reaction with the raw material gas 2 (W) is preferred.

(5) Further, according to the present invention, in any one of the above (1) to (4), the SiN film 5 is the SiN film 5 deposited by the catalytic chemical vapor deposition method. The method is characterized in that the SiN film 5 is exposed to the atmosphere of the active species 4 generated by the decomposition of the source gas 2 in the container.

As described above, the SiN film 5 is formed by catalytic chemical vapor deposition (Catalytic Chemical Vapor Deposition).
r Deposition method: catalytic CVD method), the deposition apparatus of the SiN film 5 and the catalyst annealing are performed as a series of steps in the same reaction vessel (that is, in-situ), whereby the manufacturing apparatus is manufactured. The configuration of the system can be simplified.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Here, an embodiment of the present invention will be described. Before describing a manufacturing process of the embodiment, FIG.
Referring to FIG. 3 and FIG. 3, the catalytic CVD apparatus used in the embodiment of the present invention and the JN of the SiN film formed by the catalytic CVD method are described.
The -E characteristic will be described. FIG. 2 is a conceptual configuration diagram of a catalytic CVD apparatus used in the embodiment of the present invention. An exhaust pipe 12 is connected to a vacuum vessel 11 serving as a reaction chamber. The reaction product or unreacted raw material gas 19 is exhausted by the diffusion pump 13.

A substrate holder 14 is provided at the upper center of the vacuum vessel 11.
A sample 15 held by a susceptor or the like is fixed on the substrate holder 14, and a heater 16 is provided in the recess of the substrate holder 14 for heating the sample. The temperature of the sample 15 is monitored by a thermocouple 17. You.

A gas supply pipe 18 having a nozzle for blowing out a source gas 19 is provided so as to face the sample 15.
And a tungsten catalyst body 20 are arranged, and a shutter 23 is provided between them. An AC power supply of about 700 W, for example, 680 W is supplied from the AC power supply 21 to the tungsten catalyst body 20 so that the tungsten catalyst body 20 The medium wire temperature becomes as high as about 1800 to 1900 ° C. The temperature of the catalyst body wire of the tungsten catalyst body 20 is first estimated from the temperature dependence of the electric resistance of the coil-shaped tungsten catalyst body 20, but the temperature is determined through the quartz window (not shown) provided in the vacuum vessel 11. It is estimated by an infrared radiation thermometer 22 of the formula.

The raw material gas 19 is blown onto the high-temperature tungsten catalyst body 20, and the raw material gas 19 and the tungsten catalyst body 20 come into contact with each other.
Is decomposed to form active species such as radicals, and the film is formed or annealed by opening the shutter 23 and exposing the sample 15 to an atmosphere containing the active species. In this case, there is a concern that the substrate temperature will increase due to the heat radiation from the tungsten catalyst body 20. However, when the distance between the sample 15 and the tungsten catalyst body 20 is about 5 cm, the temperature rise due to the heat radiation does not increase. Since it is within several tens of degrees Celsius, there is no problem from the viewpoint of lowering the temperature (if necessary, applied physics, Vol. 66, No. 10, pp. 10
94-1097, 1997).

Next, using this catalytic CVD apparatus,
The characteristics of the SiN film when the film is formed will be described. First,
In the state where the substrate temperature of a p-type silicon substrate having a hydrogen-terminated (100) plane as a main surface and serving as a sample 15 and having a specific resistance of 0.1 Ω · cm was set to about 200 ° C., SiH was used as a source gas 19.
_A 4.8 nm SiN film is formed using ₄ and NH ₃ ,
An electrode is formed by providing an Al film on the iN film. The substrate temperature in this case means the temperature detected by the thermocouple 17.

FIG. 3 is a graph showing the J (current density) -E (electric field) characteristics of the SiN film thus formed.
SiN film formed by VD method (Mukesh if necessary
Khale, Symp. on VLSI Tech.
Dig. pp. 51-52, June, 1997), and a SiN film formed by low pressure chemical vapor deposition (LPCVD) (HC Cheng, IEEE EL).
ECTRONDEVICE LETTERS, Vol.
16, No. 11, pp. 509-511, November
ber, 1995). In addition,
In measuring the JE characteristics, heat treatment after providing the Al film, that is, PMA (Post Metal Ann)
eal) The measurement was performed without performing the treatment.

As is clear from the figure, the SiN film formed by the catalytic CVD method has a lower current density, that is, a leak current, in the electric field intensity region of 3 MV / cm or more than the SiN film formed by another low-temperature film forming method. In addition, it has been confirmed that a high quality SiN film having a withstand voltage of 9 MV / cm or more was obtained, and application to a fine Si integrated circuit process is expected. The catalytic CVD method itself has been disclosed by Matsumura et al., One of the present inventors (see, for example,
-250438, JP-A-10-83988, or the aforementioned Applied Physics, Vol. 66, no. 1
0, pp. Further, a method of nitriding a substrate surface using a catalytic CVD apparatus has been disclosed by Izumi, one of the present inventors (Appl.
ied Physics Letters, Vol. 7
1, No. 10, pp. 1371-1372, Sept
ember, 1997).

On the premise of such matters, an embodiment of the present invention relating to low-temperature annealing for improving the film quality of a SiN film formed at a low temperature will be described with reference to FIGS. Referring to FIG. 4A, a manufacturing process according to the embodiment of the present invention will be described with reference to FIG. 4, but the surface of an n-type silicon substrate 31 having a (100) plane as a main surface is cleaned by RCA cleaning. After the conversion,
In the catalytic CVD apparatus shown in FIG. 2, the raw material gas 19 is kept at a temperature of the n-type silicon substrate 31 of 300 ° C.
1.1 sccm of SiH ₄ 33 and 5 of NH ₃ 32
By flowing 0 to 60 sccm, the gas pressure in the vacuum vessel 11 is set to 0.
01 Torr, and a tungsten catalyst 2 disposed so that the distance from the n-type silicon substrate 31 is 3.7 cm.
680 W of AC power is supplied from AC power supply 21 to 0
Was heated to 800 to 1,900 ° C., to decompose the NH ₃ 32 and SiH ₄ 33 to generate active species 34 and 35 by contacting the NH ₃ 32 and SiH ₄ 33 to the heated tungsten catalyst body 20, the The SiN film 36 is deposited by reacting the active species 34 and 35 on the surface of the n-type silicon substrate 31.

Subsequently, as shown in FIG. 4B, (in-site)
u), the supply of SiH ₄ 33 is stopped, NH ₃ 37 alone is supplied at 50-60 sccm, and the gas pressure is set to 0.013 Torr.
An active species 38 is generated under the same conditions as in the film forming step except that the SiN film 36 is formed in an atmosphere containing the active species 38.
Is heat-treated for one hour to form a modified SiN film 39. In this case, the active species 38
Is composed of various radicals and the like formed by decomposition of NH ₃ 37, and among them, N radical was the largest, followed by N ₂ radical.

Referring to FIG. 5A, FIG._ThreeDo not perform catalyst annealing
FIG. 14 is a diagram showing CV characteristics of the previous SiN film 36;
From the CV characteristics, the EOT of the SiN film 36 is 4.06 nm.
And the interface state density D_uIs 8.63 × 1
0¹¹cm^-2eV ^-1Met. Incidentally, in this case, the SiN film
The relative permittivity of 36 was determined by ellipsometry (ellipsometry).
The film thickness determined by the above-mentioned method matches the film thickness determined by the CV characteristic.
When the relative dielectric constant was determined as described above, it was about 4.4.

FIG. 5B is a view showing the CV characteristics of the SiN film 39 after the catalytic annealing treatment with NH ₃ .
EOT of the SiN film 39 from the -V characteristics was estimated to 3.80Nm, history characteristics are improved, also, the interface state density D _u and 3.53 × 10 ¹¹ cm ^-2 eV ^-1 processing It was reduced to less than half the previous value. Incidentally, the relative dielectric constant of the SiN film 39 in this case is about 6.5 when the relative dielectric constant is determined such that the film thickness determined by ellipsometry and the film thickness determined by the CV characteristics match. It was confirmed that the dielectric constant was increased by about 50% as compared with the relative dielectric constant before the treatment. In addition,
In measuring these CV characteristics, only an Al electrode was formed, but no PMA treatment was performed.

FIG. 6 (a) shows the JN of the SiN film according to the embodiment of the present invention.
FIG. 4 is a graph showing -E characteristics, wherein EOT before active annealing at a low temperature in active species generated by decomposition of NH ₃ is 2.97.
compared to the current density of the SiN film 36, ie, the leakage current, of the EOT after the low-temperature annealing process is 2.78 nm.
In the iN film 39, the current density is reduced by two digits or more, and the withstand voltage is also improved.

FIG. 6 (b) shows the JN of the SiN film according to the embodiment of the present invention.
-E characteristics are compared with those of an insulating film having substantially the same equivalent film thickness by another film forming method.
Compared to the O ₂ film, the current density and, therefore, the leakage current are improved by two orders of magnitude or more.

After deposition by the JVD method at room temperature, an annealing process is performed at a temperature of about 800 ° C. in an N ₂ atmosphere, and after the electrodes are formed, a PMA-processed EOT 2.9 nm SiN film is formed. Since the SiN film formed by the JVD method has been subjected to a high-temperature annealing treatment at about 800 ° C., the leakage current of the SiN film of the present invention is increased by almost one digit, but the equivalent film thickness is still substantially the same. A considerable improvement is seen in comparison with the SiO ₂ film, and it can be said that the film has sufficient JE characteristics.

FIG. 7 (a) FIG. 7 (a) is a graph of the interface state density shown in the description of the CV characteristics shown in FIG. It can be seen that the interface state density is reduced to about 40% by the treatment.

FIG. 7 (b) FIG. 7 (b) shows the state before the low-temperature annealing in the active species generated by the decomposition of NH ₃ (as-deposition).
ted) SiN film 36 and after low-temperature annealing (NH ₃ t)
X-ray Photoelectron Spectroscopy (XPS: X-ray Photoelectron)
N in the Spectroscopy spectrum
FIG. 5 is a diagram showing the intensity of _1s (electrons in the 1s orbit of a nitrogen atom). The low-temperature annealing treatment of the present invention has significantly reduced the intensity at around 400 eV in the binding energy considered to be caused by hydrogen. It is considered that H in the middle or at the interface with the n-type silicon substrate 31 was replaced by N.

To summarize the above, S in the SiN film is replaced by N by low-temperature annealing in active species generated by decomposition of NH ₃ by a catalyst.
The relative dielectric constant of the iN film is increased, thereby making it possible to further reduce the equivalent oxide thickness EOT. When the SiN film of the present invention is used as a gate insulating film having the same equivalent oxide thickness, its absolute film Since the thickness can be made thicker than that of the conventional SiO ₂ film, the thickness of the gate insulating film can be made uniform, thereby suppressing the variation in the characteristics of the MISFET.

In addition, H at the interface of the SiN film 39-n-type silicon substrate 31 can be replaced with N and dangling bonds can be terminated with N by the low-temperature annealing treatment of the present invention, so that the interface state density can be reduced. The MISFE having excellent characteristics can be greatly reduced because the leakage current is reduced and the withstand voltage is improved.
T can be manufactured.

Further, in the case of the present invention, such a catalyst annealing treatment can be performed at a low temperature, particularly at a low temperature of 300 ° C. or less, so that the impurity implanted into the channel region for controlling the threshold voltage is controlled. Can be suppressed, and deterioration of the short channel effect can be prevented.

The reason why the quality of the SiN film can be improved and the interface state can be improved by such an annealing treatment at a temperature of 300 ° C. or less is not necessarily clear, but it is not a simple mesh-like structure as in the conventional example. 1800, not a catalyst
One reason is that NH ₃ is efficiently decomposed and the N radical is increased as a relative ratio of generated radicals by using the tungsten catalyst body 20 of the resistance heating element which has been heated to a high temperature of １1900 ° C. It is considered to be.

Further, in a specific embodiment of the present invention, a SiN film for performing a catalyst annealing treatment is formed by a catalytic CVD method, and is successively formed in the same apparatus.
-Situ) Since the catalyst annealing treatment is performed, the film forming apparatus and the annealing apparatus can be used in common, whereby the configuration of the manufacturing apparatus system can be simplified.

Although the embodiments of the present invention have been described above, the present invention is not limited to the configurations and conditions described in the embodiments, and various modifications are possible. For example, in the description of the embodiment, an n-type silicon substrate is used. However, it is obvious that the present invention is also applied to a p-type silicon substrate, as is clear from the description of FIG. It is obvious that the present invention is not limited to a bulk silicon substrate, but is also applicable to a case where a SiN film is deposited on a silicon film epitaxially grown on a substrate such as a silicon substrate.

Further, since the present invention merely requires the modification of the SiN film as an essential requirement, the silicon film on which the SiN film is deposited is not limited to a pure single crystal silicon film, but may be a polycrystalline silicon film or an amorphous silicon film. It is obvious that the present invention can be applied to a crystalline silicon film obtained by crystallizing the film by laser annealing, and therefore to a step of forming a gate insulating film of a TFT. Further, as described above, since the present invention merely requires the modification of the SiN film as an essential requirement, it is obvious that the object on which the SiN film is deposited may be a metal.

In addition, the catalyst annealing treatment of the present invention
Since it can be performed at a temperature of 0 ° C. or less, it contributes to a low-temperature process, but is not necessarily limited to 300 ° C. or less. The catalyst annealing treatment may be performed at the above temperature.

Although the embodiment of the present invention is directed to an ultra-thin gate insulating film having an equivalent oxide thickness (EOT) of 5 nm or less, it is not necessarily limited to such an ultra-thin film. In addition, the present invention is not limited to the gate insulating film, and is applicable to the modification of the sidewall insulating film or the interlayer insulating film.
This is obvious from the description “indicating the possibility of application to ULSI in the future” in the compilation of HP (over head projector) manuscripts.

In the catalytic CVD apparatus shown in FIG. 2, the tungsten catalyst body 20 has a coil shape. However, the tungsten catalyst body 20 is not limited to a coil shape because it does not utilize inductance characteristics. In addition, it is theoretically obvious that the applied power is not limited to the AC power but may be the DC power.

[0053]

According to the present invention, SiN film formed at low temperature
Since the film quality and interface state are improved by performing low-temperature annealing in an atmosphere of active species generated by decomposing NH ₃ by a catalyst with a catalyst, redistribution of impurities can be suppressed. Excellent MISFET
Can be manufactured without variation, which greatly contributes to miniaturization and high performance of a highly integrated semiconductor integrated circuit device.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a basic configuration of the present invention.

FIG. 2 is a conceptual configuration diagram of a catalytic CVD apparatus used in the embodiment of the present invention.

FIG. 3 is an explanatory diagram of JE characteristics of a SiN film formed by a catalytic CVD method.

FIG. 4 is an explanatory diagram of a manufacturing process according to the embodiment of the present invention.

FIG. 5 is an explanatory diagram of CV characteristics of a SiN film according to the embodiment of the present invention.

FIG. 6 is an explanatory diagram of JE characteristics of the SiN film according to the embodiment of the present invention.

FIG. 7 is an explanatory diagram of an interface state density and an XPS spectrum of the SiN film according to the embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Source gas 3 Catalyst 4 Active species 5 SiN film 11 Vacuum container 12 Exhaust pipe 13 Diffusion pump 14 Substrate holder 15 Sample 16 Heater 17 Thermocouple 18 Gas supply pipe 19 Source gas 20 Tungsten catalyst 21 AC power supply 22 Infrared Radiation thermometer 23 shutter 31 n-type silicon substrate 32 NH ₃ 33 SiH ₄ 34 active species 35 active species 36 SiN film 37 NH ₃ 38 active species 39 SiN film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H01L 29/78 H01L 29/78 301P 21/336 617V 29/786 (72) Inventor Hideki Matsumura Kanazawa-shi, Ishikawa South 40,3-93 F-term (reference) AA08 AA17 FF03 FF29 FF36

Claims (5)

[Claims] After depositing a SiN film on a substrate, a raw material gas is sprayed on a catalyst body, and at least a part of the raw material gas is decomposed by a contact reaction between the catalyst body and the raw material gas. A method for manufacturing a semiconductor device, comprising exposing the SiN film to an atmosphere of active species. 2. The method for manufacturing a semiconductor device according to claim 1, wherein NH ₃ is used as said source gas. 3. The method for manufacturing a semiconductor device according to claim 1, wherein a resistance heating element is used as said catalyst. 4. The method for manufacturing a semiconductor device according to claim 1, wherein tungsten is used as said catalyst. 5. The SiN film is a SiN film deposited by a catalytic chemical vapor deposition method. Subsequently, in the same reaction vessel, an SiN film is formed in an atmosphere of active species generated by decomposition of the source gas. The method according to claim 1, wherein the semiconductor device is exposed.