JP2000202673A - レ―ザ―照射装置 - Google Patents

レ―ザ―照射装置

Info

Publication number
JP2000202673A
JP2000202673A JP2000033611A JP2000033611A JP2000202673A JP 2000202673 A JP2000202673 A JP 2000202673A JP 2000033611 A JP2000033611 A JP 2000033611A JP 2000033611 A JP2000033611 A JP 2000033611A JP 2000202673 A JP2000202673 A JP 2000202673A
Authority
JP
Japan
Prior art keywords
laser
point
cylindrical lenses
light
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000033611A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000202673A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Koichiro Tanaka
幸一郎 田中
Naoto Kusumoto
直人 楠本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000033611A priority Critical patent/JP2000202673A/ja
Publication of JP2000202673A publication Critical patent/JP2000202673A/ja
Publication of JP2000202673A5 publication Critical patent/JP2000202673A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Laser Beam Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Recrystallisation Techniques (AREA)
JP2000033611A 2000-01-01 2000-02-10 レ―ザ―照射装置 Withdrawn JP2000202673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000033611A JP2000202673A (ja) 2000-01-01 2000-02-10 レ―ザ―照射装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000033611A JP2000202673A (ja) 2000-01-01 2000-02-10 レ―ザ―照射装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9065531A Division JPH10244392A (ja) 1997-03-04 1997-03-04 レーザー照射装置

Publications (2)

Publication Number Publication Date
JP2000202673A true JP2000202673A (ja) 2000-07-25
JP2000202673A5 JP2000202673A5 (enExample) 2005-02-10

Family

ID=18558070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000033611A Withdrawn JP2000202673A (ja) 2000-01-01 2000-02-10 レ―ザ―照射装置

Country Status (1)

Country Link
JP (1) JP2000202673A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6679609B2 (en) * 2001-03-28 2004-01-20 Kabushiki Kaisha Topcon Laser beam irradiation device
KR100487085B1 (ko) * 2001-02-22 2005-05-03 이시카와지마-하리마 주고교 가부시키가이샤 조명광학계 및 이를 구비하는 레이저 처리장치
JP2011510820A (ja) * 2008-02-07 2011-04-07 カール ツァイス レーザー オプティックス ゲゼルシャフト ミット ベシュレンクテル ハフツング レーザ光源のエネルギを制御するための照射装置及び方法
KR101067658B1 (ko) * 2008-06-19 2011-09-27 한국과학기술원 레이저 박리를 이용한 미세 레이저 통합 가공장치 및 가공방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487085B1 (ko) * 2001-02-22 2005-05-03 이시카와지마-하리마 주고교 가부시키가이샤 조명광학계 및 이를 구비하는 레이저 처리장치
US6679609B2 (en) * 2001-03-28 2004-01-20 Kabushiki Kaisha Topcon Laser beam irradiation device
JP2011510820A (ja) * 2008-02-07 2011-04-07 カール ツァイス レーザー オプティックス ゲゼルシャフト ミット ベシュレンクテル ハフツング レーザ光源のエネルギを制御するための照射装置及び方法
KR101067658B1 (ko) * 2008-06-19 2011-09-27 한국과학기술원 레이저 박리를 이용한 미세 레이저 통합 가공장치 및 가공방법

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