JP2000183044A5 - - Google Patents
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- Publication number
- JP2000183044A5 JP2000183044A5 JP1998377836A JP37783698A JP2000183044A5 JP 2000183044 A5 JP2000183044 A5 JP 2000183044A5 JP 1998377836 A JP1998377836 A JP 1998377836A JP 37783698 A JP37783698 A JP 37783698A JP 2000183044 A5 JP2000183044 A5 JP 2000183044A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- nozzle
- electrode
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 description 44
- 238000005530 etching Methods 0.000 description 34
- 239000012495 reaction gas Substances 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10377836A JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10377836A JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000183044A JP2000183044A (ja) | 2000-06-30 |
| JP2000183044A5 true JP2000183044A5 (enrdf_load_stackoverflow) | 2006-03-23 |
Family
ID=18509187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10377836A Pending JP2000183044A (ja) | 1998-12-11 | 1998-12-11 | プラズマエッチング装置およびエッチングの方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000183044A (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002173779A (ja) * | 2000-12-05 | 2002-06-21 | Sekisui Chem Co Ltd | 常圧プラズマガスノズル体 |
| US7591957B2 (en) | 2001-01-30 | 2009-09-22 | Rapt Industries, Inc. | Method for atmospheric pressure reactive atom plasma processing for surface modification |
| US7510664B2 (en) * | 2001-01-30 | 2009-03-31 | Rapt Industries, Inc. | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces |
| US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
| KR100464856B1 (ko) * | 2002-11-07 | 2005-01-05 | 삼성전자주식회사 | 표면 식각 방법 및 실리콘 기판 이면 식각 방법. |
| US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
| JP2006331664A (ja) * | 2005-05-23 | 2006-12-07 | Sharp Corp | プラズマ処理装置 |
| JP4861675B2 (ja) * | 2005-10-19 | 2012-01-25 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP2007305309A (ja) * | 2006-05-08 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 大気圧プラズマ発生方法及び装置 |
| JP5288810B2 (ja) * | 2008-01-16 | 2013-09-11 | 株式会社ジャパンディスプレイ | 局所プラズマ処理装置及び処理方法 |
| WO2009146432A1 (en) * | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
| JP5295055B2 (ja) * | 2008-11-19 | 2013-09-18 | 株式会社三友製作所 | 吸引型プラズマエッチング装置およびプラズマエッチング方法 |
| JP5294816B2 (ja) * | 2008-12-02 | 2013-09-18 | 株式会社三友製作所 | 顕微鏡付吸引型局所マイクロプラズマエッチング装置及び局所マイクロプラズマエッチング方法 |
-
1998
- 1998-12-11 JP JP10377836A patent/JP2000183044A/ja active Pending
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