JP2000181072A - Liquid treating device for substrate - Google Patents

Liquid treating device for substrate

Info

Publication number
JP2000181072A
JP2000181072A JP10354675A JP35467598A JP2000181072A JP 2000181072 A JP2000181072 A JP 2000181072A JP 10354675 A JP10354675 A JP 10354675A JP 35467598 A JP35467598 A JP 35467598A JP 2000181072 A JP2000181072 A JP 2000181072A
Authority
JP
Japan
Prior art keywords
substrate
hot water
liquid
processing liquid
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10354675A
Other languages
Japanese (ja)
Other versions
JP3644281B2 (en
Inventor
Noriya Wada
憲也 和田
Isamu Akiba
勇 秋葉
Yoshiki Kikuchi
芳樹 菊池
Makoto Izaki
良 井崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP35467598A priority Critical patent/JP3644281B2/en
Priority to KR10-1999-0057222A priority patent/KR100383179B1/en
Publication of JP2000181072A publication Critical patent/JP2000181072A/en
Application granted granted Critical
Publication of JP3644281B2 publication Critical patent/JP3644281B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To keep a treating liquid so as not to lower the temp., while the treating liquid spreads on the whole surface of a substrate by supplying hot water to the back surface side of the substrate to heat to accurately control the temp. of the treating liquid supplied to the substrate in a wet process performed by supplying the treating liquid to the substrate as the substrate is rotated. SOLUTION: This treating liquid controlled to a prescribed temp. is supplied to the surface side 10a of the substrate 10 from a liquid supply nozzle and also the hot water is supplied to the back surface side 10b by forming a rotary shaft 12 for rotationally driving the substrate 10 into a hollow rotary shaft and arranging a substrate heating means 60 inside. The substrate heating means 60 is constituted of a hot water tank 61 provided with a heating means, a hot water pipe line 62 and a nozzle tip 63 provided at the tip of the hot water pipe line 62 and in the middle of the hot water pipe line 62, a temp. sensor 64, a pressure control valve 65 and a stop valve 66 are mounted successively from the tip side and plural hot water jetting ports 68 are opened on the conical surface of the nozzle tip 63.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば液晶パネル
のTFT基板やカラーフィルタ、半導体ウエハ等の基板
の表面に処理液を塗布する基板の液処理装置に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate liquid processing apparatus for applying a processing liquid to a surface of a substrate such as a TFT substrate of a liquid crystal panel, a color filter, and a semiconductor wafer.

【0002】[0002]

【従来の技術】例えば、液晶パネルのTFT基板を製造
する工程においては、現像液の塗布,エッチング液の塗
布,レジスト膜を剥離するための剥離液の供給等、所要
のウエットプロセス、つまり液処理が行われる。このよ
うな基板の液処理は、基板を回転駆動手段に装着して、
それを回転させながら、処理液をその表面に供給するこ
とにより行うようにしたものは、従来から広く用いられ
ている。
2. Description of the Related Art For example, in a process of manufacturing a TFT substrate of a liquid crystal panel, a required wet process such as application of a developing solution, application of an etching solution, and supply of a stripping solution for stripping a resist film is required. Is performed. In such a liquid processing of the substrate, the substrate is mounted on the rotation driving means,
What is performed by supplying the processing liquid to the surface while rotating it has been widely used conventionally.

【0003】前述したウエットプロセスにおいて、複数
の処理、例えば現像液を塗布した後に純水を用いた洗浄
乃至リンス処理とを単一の装置で行うようにしたもの
が、例えば特開平10−57877号公報に知られてい
る。この公知の基板の液処理装置は、カップ状のハウジ
ング内に基板回転手段を配置し、この基板回転手段はモ
ータにより回転駆動される回転軸の上端部に十字状にア
ームを連結して設け、このアームに複数の支持ピンや位
置決めピンを所定の位置に立設して、基板をこれらのピ
ン上に載置した状態で回転軸を回転駆動することにより
基板を水平状態に保持して回転させる。そして、基板の
上部位置に処理液の供給ノズルを対向配設させ、回転軸
で基板を高速回転させる間に、ノズルから処理液を基板
上に供給して遠心力の作用によって、回転による遠心力
の作用でスピンコートさせ、もって基板全体に処理液が
むらなく塗布するものである。
In the above-mentioned wet process, a plurality of processes, for example, a process of applying a developing solution and then performing a washing or rinsing process using pure water in a single apparatus are disclosed in, for example, JP-A-10-57877. It is known in the gazette. In this known substrate liquid processing apparatus, a substrate rotating unit is disposed in a cup-shaped housing, and the substrate rotating unit is provided by connecting an arm in a cross shape to an upper end of a rotating shaft that is rotationally driven by a motor, A plurality of support pins and positioning pins are erected at predetermined positions on the arm, and the substrate is placed on these pins and the rotary shaft is rotationally driven to hold and rotate the substrate in a horizontal state. . A processing liquid supply nozzle is disposed opposite to the upper position of the substrate, and the processing liquid is supplied from the nozzle onto the substrate while the substrate is rotated at a high speed by the rotation axis, and the centrifugal force due to the rotation is generated by the action of the centrifugal force. Is applied, and the processing liquid is applied evenly to the entire substrate.

【0004】基板に供給された処理液のうちの余剰分は
基板のエッジ部分から飛散するが、このように飛散した
処理液を回収するために、基板をハウジングにより囲繞
させて設けて、装置の周辺が汚損を防止されると共に処
理液が回収される。さらに、基板の裏面側に処理液が回
り込むのを防止するために、この基板の裏面に純水の液
膜を形成するようにしている。この液膜形成は、回転軸
を中空のものとなし、この回転軸の内部に純水供給管を
挿通させ、この純水供給管の先端から純水を噴出させ
て、基板の裏面側に供給するものである。また、供給管
を2重となし、内管側に窒素ガスを供給して、液処理を
行った後の基板をスピン乾燥する際に、回転周速が生じ
ない基板の回転中心位置に乾燥用のガスを供給するよう
に構成している。
A surplus of the processing liquid supplied to the substrate is scattered from an edge portion of the substrate. In order to collect such scattered processing liquid, the substrate is provided so as to be surrounded by a housing, and the apparatus is provided. The surrounding area is prevented from being stained, and the processing liquid is recovered. Furthermore, a liquid film of pure water is formed on the back surface of the substrate in order to prevent the treatment liquid from flowing around to the back surface side of the substrate. In this liquid film formation, the rotating shaft is made hollow, a pure water supply pipe is inserted through the inside of the rotating shaft, and pure water is jetted from the tip of the pure water supply pipe to supply the pure water to the back side of the substrate. Is what you do. In addition, when the supply pipe is doubled and a nitrogen gas is supplied to the inner pipe side to spin-dry the substrate after performing the liquid treatment, the substrate is dried at a rotation center position of the substrate where a rotation peripheral speed does not occur. The gas is supplied.

【0005】[0005]

【発明が解決しようとする課題】ところで、基板に対す
る処理液の塗布は、例えば現像液やレジスト膜の剥離液
を塗布する場合には、処理液を所定の温度となるように
加温した状態で供給ノズルから噴射させるのが、処理液
の粘度管理等の点で望ましい。処理を行うに当って、基
板の回転速度が一定であるとすれば、基板上に供給され
た処理液の粘度により塗布精度が変化する。即ち、処理
液の温度が設定値より低く、高粘度状態となっている
と、この処理液の基板上での広がりが阻害され、基板全
面にむらなく均一に塗り広めるのが困難になってしま
う。一方、処理液の温度が設定値より高く、粘度が低過
ぎると、遠心力の作用による処理液の周辺部に向けての
流れが速くなり過ぎ、処理液の基板との接触時間が短く
なり、液処理の効率性が失われる結果となる。例えば、
レジスト膜の剥離処理はフォトレジスト膜が成膜された
基板を現像した後に、剥離液により膜の一部を取り除く
ものであるが、レジスト膜の剥離を正確に行うには、剥
離液が基板全体に均一に広がるようにしなければなら
ず、しかも剥離液の使用量に無駄が発生しないようにす
る必要もある。処理液を加温するのは、以上の理由か
ら、粘度の一定化等を図るためである。
When a processing solution is applied to a substrate, for example, when a developing solution or a stripping solution for a resist film is applied, the processing solution is heated to a predetermined temperature. Spraying from the supply nozzle is desirable in terms of controlling the viscosity of the processing liquid. In performing the processing, if the rotation speed of the substrate is constant, the coating accuracy changes depending on the viscosity of the processing liquid supplied onto the substrate. That is, if the temperature of the processing liquid is lower than the set value and the state is high viscosity, the spreading of the processing liquid on the substrate is hindered, and it becomes difficult to spread the processing liquid uniformly over the entire surface of the substrate. . On the other hand, if the temperature of the processing liquid is higher than the set value and the viscosity is too low, the flow of the processing liquid toward the peripheral portion due to the action of the centrifugal force becomes too fast, and the contact time of the processing liquid with the substrate is shortened, This results in a loss of efficiency of the liquid treatment. For example,
The resist film stripping process is to remove a part of the film with a stripping solution after developing the substrate on which the photoresist film has been formed. In addition, it is necessary to prevent the use of the stripping solution from being wasted. The treatment liquid is heated for the purpose of stabilizing the viscosity and the like for the above-described reasons.

【0006】ところで、処理液の温度管理を厳格にし
て、一定温度の処理液を供給したとしても、基板に供給
されて周囲に広がっていく間に処理液の温度が低下しな
いように保持しなければ、基板全体にわたって均一な処
理が行われないことになる。特に、処理液に対して有効
に遠心力を働かせるために基板を高速回転させるが、基
板の回転速度が速くなれば速い程、基板及びそれに供給
された処理液の温度低下が激しくなる。しかも、基板の
回転時には、回転中心部より周辺部の方が回転周速が速
くなることから、処理液が周辺部に向かうに応じて急速
に冷却されるというように、基板上での処理液の温度に
大きな勾配が生じ、塗布むら等が発生して処理液の塗布
状態が安定しなくなるという問題点がある。
By the way, even if the temperature of the processing liquid is strictly controlled and the processing liquid at a constant temperature is supplied, it must be maintained so that the temperature of the processing liquid does not decrease while being supplied to the substrate and spreading around. In this case, uniform processing is not performed over the entire substrate. In particular, the substrate is rotated at a high speed in order to effectively apply a centrifugal force to the processing liquid. As the rotation speed of the substrate increases, the temperature of the substrate and the processing liquid supplied to the substrate decrease more rapidly. Moreover, when the substrate is rotated, the peripheral speed of the peripheral portion is higher than that of the central portion of the rotation, so that the processing solution is cooled rapidly as it goes to the peripheral portion. However, there is a problem that a large gradient is generated in the temperature of the coating liquid, and uneven coating or the like occurs, and the coating state of the processing liquid becomes unstable.

【0007】本発明は以上の点に鑑みてなされたもので
あって、その目的とするところは、ウエットプロセスに
おいて、基板に供給された処理液の温度を正確に管理で
きるようになし、この処理液が基板の全面に広がる間に
温度低下を来さないようにすることにある。
The present invention has been made in view of the above points, and an object of the present invention is to make it possible to accurately control the temperature of a processing liquid supplied to a substrate in a wet process. An object of the present invention is to prevent the temperature from decreasing while the liquid spreads over the entire surface of the substrate.

【0008】[0008]

【課題を解決するための手段】前述した目的を達成する
ために、本発明は、基板を水平状態に保持して回転駆動
する基板回転手段と、この基板回転手段により回転する
基板の表面に少なくとも1種類の処理液を所定の温度で
供給するノズル部材を、前記基板に対向配設する作動位
置と、この基板の上部を開放する退避位置とに変位可能
なアームに取り付けた処理液の供給手段と、前記基板を
前記処理液の温度と概略同じ温度となるようにするため
に、この基板の裏面側に向けて温水を噴射させる基板加
温手段とを備える構成としたことをその特徴とするもの
である。
In order to achieve the above-mentioned object, the present invention provides a substrate rotating means for holding a substrate in a horizontal state and driving it to rotate, and at least a surface of the substrate rotated by the substrate rotating means. A processing liquid supply means mounted on an arm that is displaceable between a working position for disposing one type of processing liquid at a predetermined temperature at an opposing position to the substrate and a retracted position for opening an upper portion of the substrate. And a substrate heating means for injecting hot water toward the back side of the substrate so that the substrate has a temperature substantially the same as the temperature of the processing liquid. Things.

【0009】ここで、基板加温手段は、温水配管の先端
に基板の裏面に対して、そのサイズに応じて所定の広が
りをもって温水を噴射させるノズルチップを着脱可能に
装着する構成となし、特にノズルチップにより基板裏面
に対して、そのほぼ全面に向けて温水を噴射可能な複数
の温水噴射口を形成するようにするのが望ましい。従っ
て、異なるサイズの基板を処理できるように構成した場
合には、この基板のサイズに応じて噴射角の異なるノズ
ルチップを交換して装着できるようにする。また、基板
に供給される処理液としては、現像液,エッチング液,
剥離液等があり、これらの処理液のうちの少なくとも1
種類のものであって、温度管理が必要な処理液での処理
を行う場合に適用される。
Here, the substrate heating means does not have a structure in which a nozzle tip for jetting hot water with a predetermined spread according to the size thereof is detachably attached to the front end of the hot water pipe on the back surface of the substrate. It is desirable to form a plurality of hot water jets capable of jetting hot water toward substantially the entire back surface of the substrate by the nozzle chips. Therefore, in the case where a substrate of a different size is configured to be processed, a nozzle chip having a different ejection angle according to the size of the substrate can be replaced and mounted. The processing liquid supplied to the substrate includes a developing liquid, an etching liquid,
There are stripping solutions and the like.
It is applied when performing processing with a processing liquid that needs to be temperature-controlled.

【0010】[0010]

【発明の実施の形態】まず、図1乃至図5に本発明の実
施の一形態における液処理装置の具体的構成を示す。こ
こで、以下においては、処理される基板の一例として
は、液晶パネルを構成するTFT基板であり、この基板
に現像液やレジスト膜の剥離液等を供給して行うウエッ
トプロセスを行うものとして説明する。ただし、液晶パ
ネルのカラーフィルタや、その他の基板である半導体ウ
エハ等の基板を製造する際に必要な種々の液処理を行う
ためにも応用することができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS First, FIGS. 1 to 5 show a specific configuration of a liquid processing apparatus according to an embodiment of the present invention. Here, in the following, an example of a substrate to be processed is a TFT substrate constituting a liquid crystal panel, and a description will be given assuming that a wet process is performed by supplying a developing solution or a stripping solution for a resist film to the substrate. I do. However, the present invention can also be applied to perform various liquid treatments required when manufacturing a color filter of a liquid crystal panel or a substrate such as a semiconductor wafer which is another substrate.

【0011】まず、図1及び図2において、10は基板
であって、この基板10は、図2に示したように、長方
形の薄いガラス基板から構成される。11は基板回転手
段であって、この基板回転手段11は回転軸12を有
し、この回転軸12は基台13に立設した保持筒14に
軸受15で回転自在に支持されている。回転軸12の上
端部には、4本のアーム16が水平方向に延在されてお
り、これら各アーム16には複数の支持杆17が立設さ
れており、これらの支持杆17の先端は球面形状となっ
ている。また、各アーム16の先端部分には、それぞれ
一対からなる位置決め杆18が立設されている。基板1
0は、複数の支持杆17上に点接触状態で載置されて平
面度を保持するようになし、かつ4つの角隅部は各一対
からなる位置決め杆18により水平方向に移動できない
ように規制されるようにして設置されるようになってい
る。
First, in FIGS. 1 and 2, reference numeral 10 denotes a substrate, and this substrate 10 is formed of a rectangular thin glass substrate as shown in FIG. Reference numeral 11 denotes a substrate rotating means. The substrate rotating means 11 has a rotating shaft 12, which is rotatably supported by a bearing 15 on a holding cylinder 14 erected on a base 13. At the upper end of the rotating shaft 12, four arms 16 extend in the horizontal direction. Each of the arms 16 has a plurality of support rods 17 standing upright. It has a spherical shape. Further, a pair of positioning rods 18 are provided upright at the distal end of each arm 16. Substrate 1
Numeral 0 is placed on a plurality of support rods 17 in a point contact state to maintain flatness, and the four corners are regulated by a pair of positioning rods 18 so that they cannot be moved in the horizontal direction. It is designed to be installed in such a way as to be done.

【0012】基板回転手段11の回転軸12は基台13
の下方位置に延在されて、その端部にプーリ19が連結
して設けられている。基台13の下部位置にはモータ2
0が設けられ、このモータ20の出力軸には駆動プーリ
21が連結されており、駆動プーリ21と回転軸12の
プーリ19との間には伝達ベルト22が巻回して設けら
れている。従って、モータ20により回転軸12を回転
駆動すると、アーム16に載置した基板10が回転する
ことになる。この基板10の回転中に、その表面10a
側には、例えばレジスト膜の剥離液等の処理液が塗布さ
れるようになっている。
The rotating shaft 12 of the substrate rotating means 11 is
, And a pulley 19 is provided at an end thereof so as to be connected thereto. The motor 2 is located at the lower position of the base 13.
A drive pulley 21 is connected to an output shaft of the motor 20, and a transmission belt 22 is wound between the drive pulley 21 and the pulley 19 of the rotary shaft 12. Therefore, when the rotation shaft 12 is driven to rotate by the motor 20, the substrate 10 placed on the arm 16 rotates. During rotation of the substrate 10, its surface 10a
On the side, for example, a processing liquid such as a resist film stripping liquid is applied.

【0013】以上の液処理は、基板10を回転駆動する
ことにより処理液に遠心力を作用させて、基板10の表
面10aに沿って処理液を拡散させる。そして、余剰の
処理液は基板10のエッジからほぼ水平な方向に飛散す
るが、この飛散液を回収するために、基板10は上端が
開口したハウジング23で囲繞されるようになってい
る。そして、ハウジング23の外側の位置には、基板1
0に対して処理液等を供給する供給手段が設けられてい
る。そこで、図3に処理液供給手段24の構成を示す。
処理液供給手段24は、水平方向に設けた支持アーム2
5を有し、この支持アーム25にその長手方向に複数の
液供給ノズル26が取り付けられている。支持アーム2
5の基端部には取付板28に連結されており、この取付
板28にはスプライン軸29の先端が連結され、このス
プライン軸29は、回動軸30に挿嵌されて、昇降可能
で、相対回動不能に連結されている。そして、回動軸3
0は基台13に装着した軸受部材31に回動自在に支持
されている。
In the liquid processing described above, the processing liquid is diffused along the surface 10a of the substrate 10 by applying a centrifugal force to the processing liquid by driving the substrate 10 to rotate. The surplus processing liquid scatters from the edge of the substrate 10 in a substantially horizontal direction. In order to collect the scattered liquid, the substrate 10 is surrounded by a housing 23 having an open upper end. The board 1 is located at a position outside the housing 23.
A supply means for supplying a processing liquid or the like to 0 is provided. FIG. 3 shows the configuration of the processing liquid supply unit 24.
The processing liquid supply means 24 includes a support arm 2 provided in a horizontal direction.
The support arm 25 is provided with a plurality of liquid supply nozzles 26 in its longitudinal direction. Support arm 2
5 is connected to a mounting plate 28 at the base end thereof, and a distal end of a spline shaft 29 is connected to the mounting plate 28. The spline shaft 29 is inserted into a rotating shaft 30 and can be moved up and down. , Are connected so that they cannot rotate relative to each other. And the rotating shaft 3
Numeral 0 is rotatably supported by a bearing member 31 mounted on the base 13.

【0014】回動軸30は基台13の下方に延在されて
おり、またスプライン軸29はこの回動軸30よりさら
に下方に延在されている。スプライン軸29の端部に昇
降駆動手段32が、回動軸30の端部には回動駆動手段
33がそれぞれ設けられている。昇降駆動手段32は、
シリンダ34を有し、このシリンダ34のロッドには連
結板35が連結されており、この連結板35は軸受36
を介してスプライン軸29に相対回動自在に連結されて
いる。従って、シリンダ34を作動させると、スプライ
ン軸29は実線で示した下降位置と、仮想線で示した上
昇位置とに昇降変位できるようになる。また、回動駆動
手段33は、回動軸30に固着して設けた作動レバー3
7を有し、この作動レバー37を水平方向に回動させる
ことによって、それに連結した回動軸30を回動させ
て、図2に実線で示したように、ハウジング23から外
れた位置と、同図に仮想線で示したように、ハウジング
23の上部の開口に臨む位置との間に往復回動する。
The rotating shaft 30 extends below the base 13, and the spline shaft 29 extends further below the rotating shaft 30. Elevating drive means 32 is provided at the end of the spline shaft 29, and rotation drive means 33 is provided at the end of the rotation shaft 30. The lifting drive means 32
A connecting plate 35 is connected to a rod of the cylinder 34, and the connecting plate 35 is connected to a bearing 36.
Are connected to the spline shaft 29 via the. Therefore, when the cylinder 34 is operated, the spline shaft 29 can be displaced up and down between a lower position shown by a solid line and an upper position shown by a virtual line. The rotation driving means 33 is provided with an operating lever 3 fixedly provided on the rotation shaft 30.
By rotating the operating lever 37 in the horizontal direction, the rotating shaft 30 connected to the operating lever 37 is rotated to a position separated from the housing 23 as shown by a solid line in FIG. As shown by the imaginary line in the same figure, it reciprocates between a position facing the opening at the top of the housing 23.

【0015】処理液供給手段24を以上のように構成す
ることによって、支持アーム25を上昇させて、ハウジ
ング23の外部に位置させると退避位置となり、また基
板回転手段11に載置した基板10と対面し、かつ所定
の高さ位置まで下降させることによって、液供給ノズル
26が基板10の表面10aに近接して処理液を供給で
きる作動位置となる。支持アーム25の退避位置では、
適宜のハンドリング手段で基板回転手段11に基板10
を載置したり、また基板回転手段11から基板10を取
り出したりできる。そして、液供給ノズル26は、噴射
された洗浄液が基板10の全面に円滑かつ確実に、しか
もむらなく広がるようにして複数箇所噴射されることに
なる。
By configuring the processing liquid supply means 24 as described above, the support arm 25 is raised and positioned outside the housing 23 to be in the retracted position, and the substrate 10 mounted on the substrate rotation means 11 By facing and lowering to a predetermined height position, the liquid supply nozzle 26 is brought into an operating position where the processing liquid can be supplied close to the surface 10a of the substrate 10. In the retracted position of the support arm 25,
The substrate 10 is transferred to the substrate rotating means 11 by appropriate handling means.
And the substrate 10 can be taken out from the substrate rotating means 11. Then, the liquid supply nozzle 26 is jetted at a plurality of locations so that the jetted cleaning liquid spreads smoothly, reliably, and evenly over the entire surface of the substrate 10.

【0016】処理液の塗布は、基板10の回転による遠
心力の作用を利用して行うことから、余剰の処理液が基
板10の外周におけるエッジ部分から飛散する。そこ
で、飛散処理液を有効に回収するために、液処理槽を構
成するハウジング23が設けられている。このハウジン
グ23は、底壁23aの周囲に、上端が内向きに曲成し
た外側周壁23bと内側周壁23cとが連設されてい
る。これによって、外側周壁23bと内側周壁23cと
の間に第1の液回収チャンバ40が形成され、また内側
周壁23cの内側は第2の液回収チャンバ41が形成さ
れる。このように構成すると、液処理装置で異なる2種
類の処理液塗布を行う際に、それぞれ別個の液回収チャ
ンバ40,41で回収できることになる。なお、単一の
処理液を塗布する場合には、第2の液回収チャンバを設
ける必要はない。
Since the application of the processing liquid is performed by utilizing the action of the centrifugal force due to the rotation of the substrate 10, excess processing liquid is scattered from the edge portion on the outer periphery of the substrate 10. Therefore, in order to effectively collect the scattered treatment liquid, a housing 23 constituting a liquid treatment tank is provided. In the housing 23, an outer peripheral wall 23b and an inner peripheral wall 23c whose upper ends are bent inward are continuously provided around a bottom wall 23a. Thus, a first liquid recovery chamber 40 is formed between the outer peripheral wall 23b and the inner peripheral wall 23c, and a second liquid recovery chamber 41 is formed inside the inner peripheral wall 23c. With this configuration, when two different types of processing liquids are applied by the liquid processing apparatus, they can be collected in separate liquid recovery chambers 40 and 41, respectively. When a single processing liquid is applied, it is not necessary to provide the second liquid recovery chamber.

【0017】ハウジング23における外側周壁23b及
び内側周壁23cの上端部は略水平方向に向いており、
それらの開口の直径は少なくとも基板10の対角線の長
さより大きくなし、これにより基板10の搬入及び搬出
が可能となっている。また、底壁23aは保持筒14の
周囲を囲繞しており、その中央の部位は円筒状に立ち上
がる円筒部23dとなっている。さらに、底壁23aは
外周側に向けて傾斜しており、また外側周壁23b及び
内側周壁23cは垂直壁と傾斜壁とを有するものとなっ
ている。従って、第1の液回収チャンバ40または第2
の液回収チャンバ41に向けて飛散した処理液はこれら
垂直壁及び傾斜壁を伝って流下することになる。そし
て、第1の液回収チャンバ40及び第2の液回収チャン
バ41の底面にはそれぞれ1または複数の吸引配管4
2,43が接続され、これら吸引配管42,43は負圧
ポンプ44,45に接続されると共に、回収タンク4
6,47に接続されている。
The upper ends of the outer peripheral wall 23b and the inner peripheral wall 23c of the housing 23 are oriented substantially horizontally.
The diameter of these openings is not greater than at least the length of the diagonal line of the substrate 10 so that the substrate 10 can be loaded and unloaded. Further, the bottom wall 23a surrounds the periphery of the holding cylinder 14, and a central portion thereof is a cylindrical portion 23d which rises in a cylindrical shape. Further, the bottom wall 23a is inclined toward the outer peripheral side, and the outer peripheral wall 23b and the inner peripheral wall 23c have a vertical wall and an inclined wall. Therefore, the first liquid recovery chamber 40 or the second
The processing liquid scattered toward the liquid recovery chamber 41 flows down these vertical walls and inclined walls. One or a plurality of suction pipes 4 are provided on the bottom surfaces of the first liquid collecting chamber 40 and the second liquid collecting chamber 41, respectively.
2 and 43 are connected. These suction pipes 42 and 43 are connected to negative pressure pumps 44 and 45, and
6, 47.

【0018】従って、一の処理液を基板10に塗布する
際には、基板10を外側周壁23bと内側周壁23cと
の間に位置させて、負圧ポンプ44を作動させて、基板
10の外周エッジから飛散する余剰の処理液を第1の液
回収チャンバ40内に取り込み、負圧ポンプ44による
負圧吸引力によって、第1の液回収チャンバ40内の処
理液を回収タンク46に回収する。他の処理液(洗浄液
を含む)を供給する際には、ハウジング23を上昇させ
て、内側周壁23cを基板10の位置より上方の位置に
までハウジング23を持ち上げて、負圧ポンプ45を作
動させる。これによって、基板10から飛散する他の処
理液は第2の液回収チャンバ41内に取り込まれ、吸引
配管43から回収タンク47に回収できるようになる。
Therefore, when applying one processing liquid to the substrate 10, the substrate 10 is positioned between the outer peripheral wall 23b and the inner peripheral wall 23c, and the negative pressure pump 44 is operated to activate the outer peripheral surface of the substrate 10. Excess processing liquid scattered from the edge is taken into the first liquid recovery chamber 40, and the processing liquid in the first liquid recovery chamber 40 is recovered in the recovery tank 46 by negative pressure suction by the negative pressure pump 44. When supplying another processing liquid (including a cleaning liquid), the housing 23 is raised to raise the inner peripheral wall 23 c to a position above the position of the substrate 10, and the negative pressure pump 45 is operated. . Thus, other processing liquid scattered from the substrate 10 is taken into the second liquid recovery chamber 41 and can be recovered from the suction pipe 43 to the recovery tank 47.

【0019】以上の理由から、ハウジング23は昇降可
能になっている。ハウジング23を昇降させるために、
図4に示したように、ハウジング23の両側にブラケッ
ト48を連結して設け、これら両ブラケット48に昇降
ロッド49を連結している。そして、この昇降ロッド4
9は、基台13に取り付けた軸受部材50を貫通して下
方に延び、これら2本の昇降ロッド49の下端部を掛け
渡すように昇降板51が取り付けられている。さらに、
この昇降板51には、両端を固定した固定板52,53
間に連結して設けたガイドロッド54にスライド部材5
5を介して連結されており、また固定板52,53間に
設けた送りねじ56を挿嵌したナット57が連結されて
いる。そして、送りねじ56には駆動モータ58が連結
されており、この駆動モータ58により送りねじ56を
回転させると、昇降板51が上下動して、この昇降板5
1から昇降ロッド53を介してハウジング23を上下動
させて、基板10のエッジの延長線上に第1の液回収チ
ャンバ40が臨む位置と、第2の液回収チャンバ41が
臨む位置とに昇降駆動されることになる。
For the above reasons, the housing 23 can be moved up and down. In order to raise and lower the housing 23,
As shown in FIG. 4, brackets 48 are connected to both sides of the housing 23, and a lifting rod 49 is connected to both brackets 48. And this lifting rod 4
Numeral 9 extends downward through a bearing member 50 attached to the base 13, and an elevating plate 51 is attached so as to bridge the lower ends of these two elevating rods 49. further,
Fixing plates 52, 53 having both ends fixed are provided on the lifting plate 51.
The slide member 5 is attached to the guide rod 54 connected between
5, and a nut 57 into which a feed screw 56 provided between the fixed plates 52 and 53 is inserted is connected. A drive motor 58 is connected to the feed screw 56. When the feed screw 56 is rotated by the drive motor 58, the elevating plate 51 moves up and down.
The housing 23 is moved up and down from 1 via a lifting rod 53 so as to move up and down to a position where the first liquid recovery chamber 40 faces the extension of the edge of the substrate 10 and a position where the second liquid recovery chamber 41 faces. Will be done.

【0020】ところで、処理液は、その種類や組成等に
より異なるが、粘度管理を行う等のために、所定の温度
にまで加温した状態で基板10に供給される。このよう
にして基板10に供給された処理液は、外周部における
エッジから飛散するまでの間は確実に一定の温度状態に
維持されていなければならない。このためには、基板1
0を実質的に処理液の温度と等しい温度となるように保
持する必要がある。そこで、本発明においては、まず基
板10の回転中に、この基板10を加温するために、そ
の裏面側に向けて温水を噴射させるように構成してい
る。ここで、温水は、不純物を含まない純水を所定の温
度にまで加温したものである。
The treatment liquid is supplied to the substrate 10 in a state where the treatment liquid is heated up to a predetermined temperature, for example, for viscosity control, though it varies depending on the kind and composition of the treatment liquid. The processing liquid supplied to the substrate 10 in this manner must be maintained at a constant temperature state until it is scattered from the edge in the outer peripheral portion. For this purpose, the substrate 1
It is necessary to keep 0 at a temperature substantially equal to the temperature of the processing liquid. Therefore, in the present invention, first, while the substrate 10 is rotating, in order to heat the substrate 10, hot water is sprayed toward the rear surface side. Here, the hot water is obtained by heating pure water containing no impurities to a predetermined temperature.

【0021】温水は基板10の裏面10b側に供給する
ようになっており、このために基板10を回転駆動する
回転軸12を中空回転軸となし、その内部に基板加温手
段60を配置している。この基板加温手段60は、温水
供給源として、ヒータ等からなる加温手段を備えた温水
タンク61と、温水配管62と、この温水配管62の先
端に設けたノズルチップ63とから構成され、温水配管
62の途中には、先端側から温度センサ64,圧力調整
弁65及び開閉弁66が装着されている。温水配管62
は中空となった回転軸12内に挿通されて、軸受67に
より相対回転自在に保持されている。この温水配管62
に先端に連結したノズルチップ63は、回転軸12に装
着した基板10の回転中心位置に所定の間隔を置いて対
面する状態に設けられている。そして、例えば温水タン
ク61を加圧する等により、この温水タンク61内の温
水を温水配管62内に圧送して、ノズルチップ63から
基板10の裏面に向けて噴出させるように構成してい
る。
The hot water is supplied to the back surface 10b side of the substrate 10. For this purpose, a rotating shaft 12 for rotating the substrate 10 is formed as a hollow rotating shaft, and a substrate heating means 60 is disposed therein. ing. The substrate heating means 60 includes a hot water tank 61 provided with a heating means such as a heater as a hot water supply source, a hot water pipe 62, and a nozzle tip 63 provided at a tip of the hot water pipe 62. In the middle of the hot water pipe 62, a temperature sensor 64, a pressure regulating valve 65, and an on-off valve 66 are mounted from the tip side. Hot water piping 62
Is inserted into the hollow rotary shaft 12 and held by a bearing 67 so as to be relatively rotatable. This hot water pipe 62
The nozzle tip 63 connected to the front end is provided in a state facing the rotation center position of the substrate 10 mounted on the rotation shaft 12 at a predetermined interval. Then, for example, by pressurizing the hot water tank 61, the hot water in the hot water tank 61 is pressure-fed into the hot water pipe 62 and ejected from the nozzle chip 63 toward the back surface of the substrate 10.

【0022】図5に示したように、ノズルチップ63の
外形は概略円錐形状乃至裁頭円錐形状の本体部63a
に、スカート部63bを連設したもので、スカート部6
3bは温水配管62の先端部分に所定の嵌合長をもって
連結されている。ノズルチップ63の本体部63aを構
成する円錐面には複数の温水噴出口68が開口してい
る。これらの温水噴射口68は、その中心部では鉛直方
向に向けられているが、周辺部に向かうに応じて傾斜し
ている。ここで、温水配管62の中心軸線に対する温水
噴射口68の傾斜角度を大きくすればするほど、ノズル
チップ63からの温水の噴射角度が広がることになる。
また、各々の温水噴射口68から噴射される温水は、そ
の圧力が高いほど温水噴射口68から出た後に広く拡散
することになり、従って、噴出圧によっても噴射温水の
広がり度合いが変化する。そこで、各温水噴射口68の
傾斜角度と、温水の供給圧力とによって、ノズルチップ
63からの温水の噴射角度が定まり、そしてノズルチッ
プ63と基板10との間隔によって、基板10の裏面1
0bに対する温水の噴射範囲を設定及び調整できる。こ
こで、ノズルチップ63と温水配管62との間の連結部
は、スカート部63bに設けた止めねじ69で固定され
ている。なお、ノズルチップ63と温水配管62の連結
部を固定する構造としては、止めねじ69以外にも、例
えば螺合等適宜の手段により行う構成とすることもでき
る。
As shown in FIG. 5, the outer shape of the nozzle tip 63 has a substantially conical or frustoconical main body 63a.
And a skirt portion 63b is continuously provided.
3b is connected to the distal end portion of the hot water pipe 62 with a predetermined fitting length. A plurality of hot water jets 68 are opened on the conical surface constituting the main body 63a of the nozzle tip 63. These hot water injection ports 68 are oriented vertically in the center, but are inclined toward the periphery. Here, the greater the angle of inclination of the hot water injection port 68 with respect to the central axis of the hot water pipe 62, the wider the injection angle of hot water from the nozzle tip 63.
In addition, the hot water injected from each hot water injection port 68 diffuses more widely after exiting from the hot water injection port 68 as the pressure is higher, and therefore, the degree of spread of the injected hot water changes depending on the injection pressure. The angle of the hot water jet from the nozzle tip 63 is determined by the inclination angle of each hot water jet 68 and the supply pressure of the hot water, and the distance between the nozzle tip 63 and the substrate 10 is determined by the distance between the nozzle tip 63 and the substrate 10.
The hot water injection range for 0b can be set and adjusted. Here, the connection between the nozzle tip 63 and the hot water pipe 62 is fixed by a set screw 69 provided on the skirt 63b. The structure for fixing the connecting portion between the nozzle tip 63 and the hot water pipe 62 may be configured by a suitable means such as screwing, for example, in addition to the set screw 69.

【0023】而して、ノズルチップ63は、そのスカー
ト部63bが温水配管62に対して螺合により取り付け
る構成としているから、異なる角度の温水噴射口を持っ
たノズルチップを交換して用いることができる。また、
ノズルチップ63の温水配管62に対する螺合長を調整
できるので、ノズルチップ63と基板10との間隔の調
整を行うことができる。さらに、温水配管62には圧力
調整弁65が設けられているから、この圧力調整弁65
によってノズルチップ63からの温水の噴出圧を調整で
きる。従って、これらの可変要素により基板10への温
水の噴射範囲を任意に設定できることになる。温水を基
板10に供給するのは、この基板10の全体をむらなく
加温するためであり、従って温水はできるだけ基板10
の全面に噴射できるようにするのが望ましい。ただし、
基板10の回転により、その裏面側に供給された温水は
遠心力の作用で、ある程度の広がり期待できる。このた
めに、実際には基板10のほぼ全面に温水が直接噴射さ
れるようになっておれば良い。ただし、基板10より広
い範囲で温水を噴射させるのは、温水の無駄が生じるだ
けでなく、基板10への処理液の塗布に邪魔になるので
好ましくはない。
Since the skirt portion 63b of the nozzle tip 63 is screwed to the hot water pipe 62, the nozzle tip 63 may be replaced with a nozzle tip having a hot water jet at a different angle. it can. Also,
Since the screw length of the nozzle tip 63 to the hot water pipe 62 can be adjusted, the distance between the nozzle tip 63 and the substrate 10 can be adjusted. Further, since the hot water pipe 62 is provided with a pressure regulating valve 65,
Thus, the pressure at which hot water is ejected from the nozzle tip 63 can be adjusted. Therefore, the range of hot water injection to the substrate 10 can be set arbitrarily by these variable elements. The reason why the hot water is supplied to the substrate 10 is to uniformly heat the entire substrate 10, so that the hot water is supplied to the substrate 10 as much as possible.
It is desirable to be able to spray over the entire surface. However,
Due to the rotation of the substrate 10, the hot water supplied to the back side thereof can be expected to spread to some extent by the action of the centrifugal force. For this reason, it is sufficient that warm water is directly sprayed on almost the entire surface of the substrate 10. However, spraying hot water over a wider range than the substrate 10 is not preferable because it not only wastes hot water but also hinders application of the processing liquid to the substrate 10.

【0024】以上のように構成することによって、基板
10を基板回転手段11における支持杆17及び位置決
め杆18を設けたアーム16上に設置すると共に、処理
液供給手段24の支持アーム25を回動させて、液供給
ノズル26を基板10に対面させた状態となし、回転軸
12を回転駆動すると共に、液供給ノズル26から処理
液を噴射させることによって、基板10の表面10aに
対して液処理を行うことができる。ここで、液供給ノズ
ル26から噴射される処理液は、例えば40℃〜50℃
等というように、その種類や粘度等に応じて基板10に
対して最適の塗布温度条件に保持した状態で供給する。
そして、この液処理を行っている間は、回転軸12の内
部に設けた基板加温手段60を構成する加温配管62に
所定の圧力で温水を供給することによって、基板10の
裏面10b側のほぼ全面に温水を噴出させる。これによ
って、基板10が処理液の温度とほぼ同じ温度に保持さ
れることになるので、この基板10に供給された処理液
が周囲に広まる間に、その温度が変化するのを防止でき
る。
With the above construction, the substrate 10 is set on the arm 16 provided with the support rod 17 and the positioning rod 18 in the substrate rotating means 11 and the support arm 25 of the processing liquid supply means 24 is rotated. In this state, the liquid supply nozzle 26 faces the substrate 10, the rotation shaft 12 is driven to rotate, and the processing liquid is ejected from the liquid supply nozzle 26 to perform the liquid processing on the surface 10 a of the substrate 10. It can be performed. Here, the processing liquid injected from the liquid supply nozzle 26 is, for example, 40 ° C. to 50 ° C.
For example, the substrate 10 is supplied to the substrate 10 in a state of maintaining the optimum application temperature condition according to the type, viscosity, and the like.
During this liquid processing, hot water is supplied at a predetermined pressure to a heating pipe 62 constituting a substrate heating means 60 provided inside the rotating shaft 12 so that the back surface 10b of the substrate 10 is Spray warm water almost all over the area. As a result, the temperature of the substrate 10 is maintained at substantially the same temperature as the temperature of the processing liquid, so that the temperature of the processing liquid supplied to the substrate 10 can be prevented from changing while it spreads around.

【0025】ここで、温水の温度としては、処理液の温
度と同じか、それよりはある程度高くなし、かつノズル
チップ63における温水噴射口68からは基板10の裏
面10bに対してほぼ全面に及ぶように温水が噴射され
ることになる。この結果、基板10の回転時に基板10
が部分的に冷却されるのを防止できる。ただし、基板1
0をあまり高速で回転させると、その分だけ空気の流れ
が激しくなり、温水を供給したとしても、温度低下が生
じる可能性がある。そこで、基板回転手段11による基
板10の回転数としては、基板10に供給された処理液
が基板10の全体に円滑に広がらせることができ、しか
もその回転中に空気流により部分的な冷却が生じない程
度の回転数を選択する。また、基板10の回転による空
気流の発生を抑制するには、図1に示したように、回転
軸12の近傍に噴射ノズル59を設けて、この噴射ノズ
ル59から、加温されたクリーンエア等を噴出させるよ
うにすれば良い。
Here, the temperature of the hot water is not higher than or equal to the temperature of the processing solution, and extends from the hot water injection port 68 of the nozzle chip 63 to almost the entire back surface 10b of the substrate 10. Hot water will be injected like this. As a result, when the substrate 10 rotates,
Can be prevented from being partially cooled. However, substrate 1
If 0 is rotated at too high a speed, the flow of air becomes intensified by that much, and even if hot water is supplied, the temperature may drop. Therefore, the number of rotations of the substrate 10 by the substrate rotation means 11 can be such that the processing liquid supplied to the substrate 10 can be smoothly spread over the entire substrate 10, and partial cooling is performed by the air flow during the rotation. Select a rotation speed that does not occur. In addition, in order to suppress the generation of the air flow due to the rotation of the substrate 10, as shown in FIG. 1, an injection nozzle 59 is provided near the rotation shaft 12, and the heated clean air is supplied from the injection nozzle 59. Etc. may be ejected.

【0026】なお、基板10が液処理工程に搬入される
前の段階では低い温度状態となっているものもあり、こ
の場合には、基板回転手段11に基板10が装着されて
回転が開始した直後に処理液供給手段24から処理液を
供給すると、基板加温手段60により基板10が十分加
温される前の段階では、この基板10に供給された処理
液の温度が低下することになる。このような事態が発生
しないようにするには、処理液供給手段24から処理液
が供給される前に、予め基板10の裏面に温水を噴射す
ることにより基板10を加温するのが望ましい。また、
基板10を基板回転手段11に装着する前の段階で、ヒ
ータ等で加温することもできる。
In some cases, the substrate 10 is in a low temperature state before the substrate 10 is carried into the liquid processing step. In this case, the substrate 10 is mounted on the substrate rotating means 11 and rotation starts. Immediately after the processing liquid is supplied from the processing liquid supply means 24, the temperature of the processing liquid supplied to the substrate 10 decreases before the substrate 10 is sufficiently heated by the substrate heating means 60. . In order to prevent such a situation from occurring, it is desirable that the substrate 10 be heated by injecting hot water onto the back surface of the substrate 10 before the processing liquid is supplied from the processing liquid supply unit 24. Also,
At the stage before the substrate 10 is mounted on the substrate rotating means 11, the substrate 10 can be heated by a heater or the like.

【0027】以上により、基板10の液処理を行ってい
る間に、基板10を供給される処理液の温度とほぼ同じ
温度状態に保持できる。この結果、処理液の塗布効率等
が極めて良好になり、例えばレジスト膜の剥離液を基板
10に供給する場合等にあっては、処理液が基板10の
表面におけるパターンの形成による凹凸に確実に馴染む
粘度状態を維持し、かつ遠心力の作用による所定の進行
速度で全周に円滑に塗り広められることになって、剥離
不良等が発生するおそれはない。しかも、温水は基板1
0の裏面10bのほぼ全面に供給されることから、裏面
10b側は温水の膜が形成された状態に保持されること
から、処理液の裏面側への回り込みの防止も図ることが
できる。
As described above, while the liquid processing of the substrate 10 is being performed, the substrate 10 can be maintained at a temperature substantially equal to the temperature of the processing liquid supplied. As a result, the coating efficiency of the processing liquid becomes extremely good. For example, in the case where the stripping liquid for the resist film is supplied to the substrate 10, the processing liquid surely becomes uneven due to pattern formation on the surface of the substrate 10. The viscous state is maintained, and the composition is smoothly spread over the entire circumference at a predetermined traveling speed by the action of the centrifugal force. In addition, the hot water is
0 is supplied to almost the entire back surface 10b, so that the back surface 10b side is maintained in a state where a film of warm water is formed, so that it is possible to prevent the processing liquid from flowing to the back surface side.

【0028】ここで、回転駆動手段11に装着されて、
液処理が行われる基板10のサイズとしては複数種類の
ものがあり、単一の回転駆動手段11で、これらサイズ
の異なる複数種類のものを装着できるように構成したも
のがある。このためには、アーム16及びその基台13
を回転軸12に着脱可能な構成とするか、またはアーム
16に装着した支持杆17及び位置決め杆18の位置を
変えたり、あるいはこれら支持杆17,位置決め杆18
を複数のサイズの基板をそのまま装着できるようにす
る。このように、異なるサイズの基板が装着された時に
も、基板のほぼ全面に温水を供給できるようにするため
には、温水配管62の先端に螺合したノズルチップ63
を交換すれば良い。従って、種々のサイズの基板に対し
て、その全面に及び、しかもエッジを越えない位置にま
で温水を噴射できる構造、つまり温水噴射口の数及びそ
れらの傾斜角度が異なる複数種類のノズルチップを用意
しておき、回転駆動手段11に装着される基板のサイズ
に応じた噴射角を有するノズルチップを温水配管62の
先端に装着するようになし、かつそのノズルチップの高
さ位置を適宜調整し、さらに圧力調整弁65により温水
の噴射圧を調整する。これによって、それぞれ異なるサ
イズの基板の裏面に対してほぼ全面に温水を噴射させる
ことができる。
Here, mounted on the rotation drive means 11,
There are a plurality of types of sizes of the substrate 10 on which the liquid processing is performed, and there is a configuration in which a plurality of types having different sizes can be mounted by a single rotation driving unit 11. For this purpose, the arm 16 and its base 13
Can be attached to and detached from the rotating shaft 12, or the positions of the support rod 17 and the positioning rod 18 mounted on the arm 16 can be changed, or the support rod 17 and the positioning rod 18 can be changed.
To allow a plurality of sizes of substrates to be mounted as they are. As described above, even when substrates of different sizes are mounted, in order to supply hot water to almost the entire surface of the substrate, the nozzle tip 63 screwed to the tip of the hot water pipe 62 is required.
Can be replaced. Therefore, a structure capable of injecting hot water over the entire surface of a substrate of various sizes and even to a position not exceeding the edge, that is, a plurality of types of nozzle tips having different numbers of hot water injection ports and their inclination angles is prepared. In addition, a nozzle tip having an ejection angle corresponding to the size of the substrate to be mounted on the rotation driving means 11 is mounted on the tip of the hot water pipe 62, and the height position of the nozzle tip is appropriately adjusted, Further, the injection pressure of the hot water is adjusted by the pressure adjusting valve 65. This makes it possible to spray hot water over substantially the entire back surface of substrates of different sizes.

【0029】[0029]

【発明の効果】以上説明したように、本発明は、基板を
回転させながら、この基板の表面に処理液を供給するこ
とにより行われるウエットプロセスにおいて、基板の裏
面側に温水を供給することによって、この基板を加温す
る構成としたので、基板に供給された処理液の温度を正
確に管理できるようになし、この処理液を基板の全面に
広がる間にその温度が低下するのを防止できる等の効果
を奏する。
As described above, according to the present invention, in a wet process performed by supplying a processing liquid to the front surface of a substrate while rotating the substrate, hot water is supplied to the back surface side of the substrate. Since the substrate is heated, the temperature of the processing liquid supplied to the substrate can be accurately controlled, and the temperature of the processing liquid can be prevented from lowering while spreading over the entire surface of the substrate. And so on.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の一形態を示す基板の液処理装置
の概略構成図である。
FIG. 1 is a schematic configuration diagram of a substrate liquid processing apparatus according to an embodiment of the present invention.

【図2】図1の平面図である。FIG. 2 is a plan view of FIG.

【図3】処理液供給手段の断面図である。FIG. 3 is a sectional view of a processing liquid supply unit.

【図4】図1の外観図である。FIG. 4 is an external view of FIG.

【図5】基板加温手段の構成を示す断面図である。FIG. 5 is a sectional view showing a configuration of a substrate heating unit.

【符号の説明】[Explanation of symbols]

10 基板 11 基板回転手段 12 回転軸 24 処理液供給手段 27 液供給ノズル 60 基板加温手段 61 温水タンク 62 温水配管 63 ノズルチップ 64 温度センサ 65 圧力調整弁 66 開閉弁 68 温水噴出口 DESCRIPTION OF SYMBOLS 10 Substrate 11 Substrate rotation means 12 Rotation axis 24 Processing liquid supply means 27 Liquid supply nozzle 60 Substrate heating means 61 Hot water tank 62 Hot water piping 63 Nozzle chip 64 Temperature sensor 65 Pressure control valve 66 Open / close valve 68 Hot water jet

───────────────────────────────────────────────────── フロントページの続き (72)発明者 菊池 芳樹 東京都渋谷区東3丁目16番3号 日立電子 エンジニアリング株式会社内 (72)発明者 井崎 良 東京都渋谷区東3丁目16番3号 日立電子 エンジニアリング株式会社内 Fターム(参考) 2H025 AB16 AB17 EA05 FA15 FA24 FA40 FA48 4F042 AA07 EB25 EB28 EB30  ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Yoshiki Kikuchi 3-16-3 Higashi, Shibuya-ku, Tokyo Inside Hitachi Electronics Engineering Co., Ltd. (72) Ryo Izaki 3-3-1-3 Higashi, Shibuya-ku, Tokyo Hitachi Electronic Engineering Co., Ltd. F-term (reference) 2H025 AB16 AB17 EA05 FA15 FA24 FA40 FA48 4F042 AA07 EB25 EB28 EB30

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板を水平状態に保持して回転駆動する
基板回転手段と、 この基板回転手段により回転する基板の表面に少なくと
も1種類の処理液を所定の温度で供給するノズル部材
を、前記基板に対向配設する作動位置と、この基板の上
部を開放する退避位置とに変位可能なアームに取り付け
た処理液の供給手段と、 前記基板を前記処理液の温度と概略同じ温度となるよう
にするために、この基板の裏面側に向けて温水を噴射さ
せる基板加温手段とを備えた基板の液処理装置。
A substrate rotating means for rotating the substrate while holding the substrate in a horizontal state; and a nozzle member for supplying at least one type of processing liquid at a predetermined temperature to a surface of the substrate rotated by the substrate rotating means, A processing liquid supply unit attached to an arm displaceable between an operating position disposed opposite to the substrate and a retracted position that opens an upper portion of the substrate, and the substrate is brought to a temperature substantially equal to the temperature of the processing liquid. A substrate heating means for injecting hot water toward the back side of the substrate.
【請求項2】 前記基板加温手段は、温水配管の先端に
前記基板の裏面に対して所定の広がりをもって温水を噴
射させる複数の温水噴射口を備えたノズルチップを着脱
可能に装着する構成としたことを特徴とする請求項1記
載の基板の液処理装置。
2. The apparatus according to claim 2, wherein the substrate heating means is configured to detachably mount a nozzle tip having a plurality of hot water jets for jetting hot water with a predetermined spread to a back surface of the substrate at a tip of a hot water pipe. The substrate liquid processing apparatus according to claim 1, wherein:
【請求項3】 前記ノズルチップの温水噴射口は、前記
基板の裏面に対して、そのほぼ全面に向けて温水を噴射
可能なものとなし、前記基板のサイズに応じて噴射角の
異なるノズルチップを交換して装着できる構成としたこ
とを特徴とする請求項2記載の基板の液処理装置。
3. A hot water jet port of the nozzle chip is capable of jetting hot water onto substantially the entire back surface of the substrate, and the nozzle tip having a different jet angle depending on the size of the substrate. 3. The liquid processing apparatus for a substrate according to claim 2, wherein said apparatus can be replaced and mounted.
JP35467598A 1998-12-14 1998-12-14 Substrate liquid processing apparatus and liquid processing method Expired - Fee Related JP3644281B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP35467598A JP3644281B2 (en) 1998-12-14 1998-12-14 Substrate liquid processing apparatus and liquid processing method
KR10-1999-0057222A KR100383179B1 (en) 1998-12-14 1999-12-13 Wet-processing apparatus for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35467598A JP3644281B2 (en) 1998-12-14 1998-12-14 Substrate liquid processing apparatus and liquid processing method

Publications (2)

Publication Number Publication Date
JP2000181072A true JP2000181072A (en) 2000-06-30
JP3644281B2 JP3644281B2 (en) 2005-04-27

Family

ID=18439152

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Country Link
JP (1) JP3644281B2 (en)
KR (1) KR100383179B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6945259B2 (en) * 2000-06-26 2005-09-20 Kabushiki Kaisha Toshiba Substrate cleaning method and substrate cleaning apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824306B1 (en) * 2006-12-22 2008-04-22 세메스 주식회사 Apparatus for treating substrate
KR100888654B1 (en) * 2007-10-10 2009-03-13 세메스 주식회사 Appartus for treating substrate and method for treating substrate using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119628A (en) * 1990-09-10 1992-04-21 Mitsubishi Electric Corp Resist heat treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6945259B2 (en) * 2000-06-26 2005-09-20 Kabushiki Kaisha Toshiba Substrate cleaning method and substrate cleaning apparatus

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Publication number Publication date
KR20000048104A (en) 2000-07-25
KR100383179B1 (en) 2003-05-09
JP3644281B2 (en) 2005-04-27

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