JP2000150928A - Transparent electrode substrate, manufacture thereof and photovoltaic element - Google Patents
Transparent electrode substrate, manufacture thereof and photovoltaic elementInfo
- Publication number
- JP2000150928A JP2000150928A JP10316223A JP31622398A JP2000150928A JP 2000150928 A JP2000150928 A JP 2000150928A JP 10316223 A JP10316223 A JP 10316223A JP 31622398 A JP31622398 A JP 31622398A JP 2000150928 A JP2000150928 A JP 2000150928A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode substrate
- transparent electrode
- transparent conductive
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、透光性基板に透明
導電性膜を形成して構成される透明電極基板及びその作
製方法、並びに、そのような透明電極基板を用いる光起
電力素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent electrode substrate formed by forming a transparent conductive film on a light-transmitting substrate, a method for manufacturing the same, and a photovoltaic element using such a transparent electrode substrate. .
【０００２】[0002]
【従来の技術】基板側から光を入射させて電気エネルギ
を取り出す構成の光起電力素子では、ガラス板等の透光
性基板上に透明導電性膜を光入射側電極として積層して
なる透明電極基板が利用される。この透明導電性膜の材
料としては、酸化亜鉛（ＺｎＯ），酸化インジウム錫
（ＩＴＯ），酸化錫（ＳｎＯ2 ）が一般的であり、これ
以外に、高光透過率及び低抵抗率を実現するべく、酸化
アルミニウム（Ａｌ2 Ｏ3）を含む酸化亜鉛（特開平５
−２７５７２７号公報）も知られている。2. Description of the Related Art In a photovoltaic element having a structure in which light is incident from a substrate side to extract electric energy, a transparent electroconductive element is formed by laminating a transparent conductive film as a light incident side electrode on a transparent substrate such as a glass plate. An electrode substrate is used. As a material of the transparent conductive film, zinc oxide (ZnO), indium tin oxide (ITO), and tin oxide (SnO 2 ) are generally used. In addition, in order to realize high light transmittance and low resistivity. , Zinc oxide containing aluminum oxide (Al 2 O 3 )
-275727) is also known.
【０００３】そして、この透明電極基板の作製には、量
産性に優れていて低コストである点を考慮して、一般的
にスパッタリング法が検討されている。即ち、透光性基
板を陽極とし、上記のような透明導電性膜の材料（ター
ゲット）を陰極として、１０ -2Ｔｏｒｒ程度の不活性ガ
ス（例えばＡｒガス）中で陰極に負の高周波電圧を印加
することによってグロー放電を行い、放電で生じたイオ
ン（例えばＡｒ+ ）をターゲットに当てて、その際に起
こるスパッタリング作用を利用して透光性基板上にその
材料を成膜して透明導電性膜を形成する。[0003] The production of this transparent electrode substrate requires
Due to its high productivity and low cost,
A sputtering method is being studied. That is, a translucent group
The plate is used as the anode, and the material (tar
Get) as cathode and 10 -2Inert gas of about Torr
Negative high frequency voltage applied to the cathode in the cathode (for example, Ar gas)
Glow discharge and discharge
(Eg, Ar+) To the target,
By utilizing this sputtering action, the
A transparent conductive film is formed by depositing a material.
【０００４】ところで、光起電力素子にあっては、光入
射側電極（透明導電性膜）の表面が凹凸化している構造
（テクスチャ構造）を有していると大きな電流を出力で
きることが知られている。即ち、透光性基板側から入射
してきた光が凹凸形状を有する光入射側電極（透明導電
性膜）と光電変換層との界面で散乱された後に光電変換
層に入射するので、光電変換層に斜めに光が入射して光
路の実質的な距離が延びて光の吸収が増大し、この結
果、光起電力素子の光電変換特性が向上して出力電流が
増加する。Incidentally, it is known that a photovoltaic element can output a large current if it has a structure (texture structure) in which the surface of the light incident side electrode (transparent conductive film) is uneven. ing. That is, the light incident from the light-transmitting substrate side is scattered at the interface between the light incident side electrode (transparent conductive film) having the uneven shape and the photoelectric conversion layer and then enters the photoelectric conversion layer. Light obliquely enters the optical path, the substantial distance of the optical path increases, and the light absorption increases. As a result, the photoelectric conversion characteristics of the photovoltaic element improve, and the output current increases.
【０００５】[0005]
【発明が解決しようとする課題】スパッタリング法を用
いて透光性基板上に透明導電性膜を形成する方法は、処
理工程が簡便であるが、光起電力素子の光入射側電極に
期待されるような凹凸形状（テクスチャ構造）を実現す
ることはできない。よって、スパッタリング法を用いて
光入射側電極（透明導電性膜）を形成した光起電力素子
の光電変換特性の向上が妨げられているという問題があ
る。The method of forming a transparent conductive film on a light-transmitting substrate by using a sputtering method has a simple processing step, but is expected for a light incident side electrode of a photovoltaic element. Such irregularities (texture structures) cannot be realized. Therefore, there is a problem that the improvement of the photoelectric conversion characteristics of the photovoltaic element in which the light incident side electrode (transparent conductive film) is formed by the sputtering method is hindered.
【０００６】本発明は斯かる事情に鑑みてなされたもの
であり、スパッタリング法を用いて透明導電性膜を作製
する場合にあっても、その表面を凹凸形状にできる透明
電極基板及びその作製方法を提供することを目的とす
る。The present invention has been made in view of such circumstances, and even when a transparent conductive film is formed by using a sputtering method, a transparent electrode substrate and a method of manufacturing the same that can form an uneven surface. The purpose is to provide.
【０００７】本発明の他の目的は、スパッタリング法を
用いて光入射側電極を形成する場合において、その光電
変換特性の向上を図れる光起電力素子を提供することに
ある。Another object of the present invention is to provide a photovoltaic element capable of improving the photoelectric conversion characteristics when a light incident side electrode is formed by a sputtering method.
【０００８】[0008]
【課題を解決するための手段】請求項１に係る透明電極
基板は、スパッタリング法にて透明導電性膜を透光性基
板に形成してなる透明電極基板において、前記透光性基
板と前記透明導電性膜との間に、凹凸化したアルミニウ
ム化合物膜を備えることを特徴とする。According to a first aspect of the present invention, there is provided a transparent electrode substrate formed by forming a transparent conductive film on a light transmitting substrate by a sputtering method. An uneven aluminum compound film is provided between the conductive film and the conductive film.
【０００９】本発明の透明電極基板では、透光性基板と
透明導電性膜との間に表面を凹凸化したアルミニウム化
合物膜が設けられ、その上に透明導電性膜が形成されて
いるので、透明導電性膜の表面もアルミニウム化合物膜
の形状に応じて凹凸化している。In the transparent electrode substrate of the present invention, an aluminum compound film having a roughened surface is provided between the light-transmitting substrate and the transparent conductive film, and the transparent conductive film is formed thereon. The surface of the transparent conductive film is also uneven according to the shape of the aluminum compound film.
【００１０】請求項２に係る透明電極基板は、請求項１
において、前記アルミニウム化合物膜は、酸化アルミニ
ウム膜または窒化アルミニウム膜であることを特徴とす
る。[0010] The transparent electrode substrate according to the second aspect is the first aspect.
, Wherein the aluminum compound film is an aluminum oxide film or an aluminum nitride film.
【００１１】アルミニウム化合物膜として酸化アルミニ
ウム膜または窒化アルミニウム膜としても、それらの膜
は光の透過率が高く、光透過性に問題はない。[0011] Even if an aluminum oxide film or an aluminum nitride film is used as the aluminum compound film, those films have high light transmittance and have no problem in light transmittance.
【００１２】請求項３に係る光起電力素子は、請求項１
または２記載の透明電極基板を備えることを特徴とす
る。According to a third aspect of the present invention, a photovoltaic device is provided.
Or a transparent electrode substrate described in 2 above.
【００１３】本発明の光起電力素子では、光入射側電極
となる透明導電性膜が凹凸化するので、光を有効に利用
することができ、光電変換特性が向上する。In the photovoltaic device of the present invention, the transparent conductive film serving as the light incident side electrode has irregularities, so that light can be used effectively and the photoelectric conversion characteristics are improved.
【００１４】請求項４に係る透明電極基板の作製方法
は、スパッタリング法にて透明導電性膜を透光性基板に
形成してなる透明電極基板を作製する方法において、前
記透光性基板にアルミニウム膜を形成する工程と、形成
したアルミニウム膜をエッチングして凹凸化する工程
と、アルミニウム膜をアルミニウム化合物膜に変化させ
る工程と、アルミニウム化合物膜にスパッタリング法に
て透明導電性膜を形成する工程とを有することを特徴と
する。According to a fourth aspect of the present invention, there is provided a transparent electrode substrate formed by forming a transparent conductive film on a light transmitting substrate by a sputtering method. A step of forming a film, a step of etching the formed aluminum film to make it uneven, a step of changing the aluminum film to an aluminum compound film, and a step of forming a transparent conductive film by sputtering on the aluminum compound film. It is characterized by having.
【００１５】エッチング処理により凹凸化されたアルミ
ニウム化合物膜上にスパッタリング法にて透明導電性膜
を形成することにより、スパッタリング法を用いても、
アルミニウム化合物膜の凹凸形状に応じて透明導電性膜
が凹凸化する。By forming a transparent conductive film by a sputtering method on the aluminum compound film which has been made uneven by the etching treatment, the sputtering method can be used.
The transparent conductive film is made uneven according to the uneven shape of the aluminum compound film.
【００１６】[0016]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面を参照して具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments.
【００１７】図１は、本発明の透明電極基板の構成図で
ある。図１において、１はガラス製の透光性基板であ
る。透光性基板１上には、表面が凹凸形状をなす酸化ア
ルミニウム（Ａｌ2 Ｏ3 ）または窒化アルミニウム（Ａ
ｌＮ）からなるアルミニウム化合物膜２（厚さ：１００
０Å）が形成され、その上には、表面が凹凸形状をな
す、即ち表面にテクスチャ構造を有する酸化亜鉛（Ｚｎ
Ｏ）または酸化錫（ＳｎＯ 2 ）からなる透明導電性膜３
（厚さ：６０００Å）が形成されている。FIG. 1 is a structural view of the transparent electrode substrate of the present invention.
is there. In FIG. 1, reference numeral 1 denotes a transparent substrate made of glass.
You. On the translucent substrate 1, an oxide film having an uneven surface is formed.
Luminium (AlTwoOThree) Or aluminum nitride (A
1N) (thickness: 100)
0 °) is formed, on which the surface has an uneven shape.
That is, zinc oxide having a texture structure on its surface (Zn
O) or tin oxide (SnO) Two) Transparent conductive film 3
(Thickness: 6000 °).
【００１８】次に、このような構成を有する本発明の透
明電極基板の作製手順を、その工程を示す図２を参照し
て説明する。まず、ガラス製の透光性基板１上に、スパ
ッタリング法にて、厚さ１０００Åのアルミニウム（Ａ
ｌ）膜２１を形成する（図２（ａ））。次に、塩酸：水
＝１：１のエッチャントを用いてアルミニウム膜２１を
部分的にエッチング除去してその表面を凹凸化する（図
２（ｂ））。Next, the procedure for manufacturing the transparent electrode substrate of the present invention having such a configuration will be described with reference to FIGS. First, on a translucent substrate 1 made of glass, aluminum (A) having a thickness of 1000
1) A film 21 is formed (FIG. 2A). Next, the aluminum film 21 is partially etched away using an etchant of hydrochloric acid: water = 1: 1 to make the surface uneven (FIG. 2B).
【００１９】次に、大気中または窒素雰囲気中で５０℃
で加熱して、アルミニウム膜２１を酸化または窒化させ
て、結晶化された酸化アルミニウムまたは窒化アルミニ
ウムのアルミニウム化合物膜２を形成する（図２
（ｃ））。最後に、スパッタリング法にて、酸化亜鉛ま
たは酸化錫を厚さ６０００Åだけ成膜して、透明導電性
膜３を形成する（図２（ｄ））。この際、下地となるア
ルミニウム化合物膜２の表面が凹凸形状をなすので、そ
の上に形成される透明導電性膜３も凹凸化し、テクスチ
ャ構造を有することになる。Next, at 50 ° C. in the air or in a nitrogen atmosphere.
To oxidize or nitride the aluminum film 21 to form the crystallized aluminum oxide or aluminum nitride aluminum compound film 2 (FIG. 2).
(C)). Finally, a transparent conductive film 3 is formed by depositing zinc oxide or tin oxide to a thickness of 6000 ° by a sputtering method (FIG. 2D). At this time, since the surface of the aluminum compound film 2 serving as a base has an uneven shape, the transparent conductive film 3 formed thereon also has an uneven shape and has a texture structure.
【００２０】ところで、スパッタリング法にて透光性基
板１上に直接形成した酸化亜鉛または酸化錫の透明導電
性膜を直接エッチングしてその表面を凹凸化するような
手法も考えられるが、酸化亜鉛または酸化錫のエッチン
グ加工は容易でないという問題がある。これに対して、
アルミニウムは、これらの酸化亜鉛または酸化錫と比較
してエッチング加工が容易であるので、本発明は簡単に
テクスチャ構造の透明導電性膜を持った透明電極基板を
作製できる。By the way, a method of directly etching a transparent conductive film of zinc oxide or tin oxide formed directly on the translucent substrate 1 by a sputtering method to make the surface uneven is also conceivable. Alternatively, there is a problem that etching of tin oxide is not easy. On the contrary,
Aluminum is easier to etch than zinc oxide or tin oxide, and thus the present invention can easily produce a transparent electrode substrate having a textured transparent conductive film.
【００２１】図３は、上述したような透明電極基板を用
いた本発明の光起電力素子の構成図である。図３におい
て、１，２，３は、図１と同様のガラス製の透光性基
板，アルミニウム化合物膜，透明導電性膜（光入射側電
極）である。透明導電性膜３上には、ｐ型非晶質シリコ
ン層４（厚さ：２００Å）、ｉ型非晶質シリコン層５
（厚さ：７５０Å）、ｎ型微結晶シリコン層６（厚さ：
２５０Å）、ｐ型非晶質シリコン層７（厚さ：２００
Å）、ｉ型非晶質シリコン層８（厚さ：３０００Å）、
ｎ型非晶質シリコン層９（厚さ：３００Å）、ＺｎＯま
たはＩＴＯからなる拡散防止層１０（厚さ：１０００
Å）、Ａｇからなる裏面電極膜１１（厚さ：２０００
Å）がこの順に積層形成されている。FIG. 3 is a structural diagram of a photovoltaic device of the present invention using the above-mentioned transparent electrode substrate. 3, reference numerals 1, 2, and 3 denote a light-transmitting substrate made of glass, an aluminum compound film, and a transparent conductive film (light-incident side electrode) similar to those in FIG. On the transparent conductive film 3, a p-type amorphous silicon layer 4 (thickness: 200 °), an i-type amorphous silicon layer 5
(Thickness: 750 °), n-type microcrystalline silicon layer 6 (thickness:
250 °), p-type amorphous silicon layer 7 (thickness: 200)
Å), i-type amorphous silicon layer 8 (thickness: 3000 Å),
An n-type amorphous silicon layer 9 (thickness: 300 °), a diffusion prevention layer 10 made of ZnO or ITO (thickness: 1000).
Å), back electrode film 11 made of Ag (thickness: 2000)
Å) are laminated in this order.
【００２２】このようなアルミニウム化合物膜２は透光
性を有するので、透光性基板１と透明導電性膜３との間
のアルミニウム化合物膜２の存在が光電変換特性に悪影
響を及ぼすことはなく、例えば酸化アルミニウムの屈折
率（１．６２）が、ガラスの屈折率（１．５）とＺｎＯ
またはＩＴＯの屈折率（２．０）との間であるので、こ
のアルミニウム化合物膜２の存在によって反射防止効果
が得られる。Since such an aluminum compound film 2 has a light transmitting property, the presence of the aluminum compound film 2 between the light transmitting substrate 1 and the transparent conductive film 3 does not adversely affect the photoelectric conversion characteristics. For example, the refractive index (1.62) of aluminum oxide is the same as that of glass (1.5) and ZnO.
Alternatively, since the refractive index is between the refractive index (2.0) of ITO and the presence of this aluminum compound film 2, an antireflection effect can be obtained.
【００２３】このような構成の光起電力素子は、以下の
ようにして製造できる。まず、上述したような工程（図
２参照）にて透明電極基板を作製し、その透明電極基板
上に、プラズマＣＶＤ法にて各シリコン層４〜９を順次
形成し、その上に、スパッタリング法にて、拡散防止層
１０，裏面電極膜１１を形成する。The photovoltaic element having such a configuration can be manufactured as follows. First, a transparent electrode substrate is manufactured in the above-described process (see FIG. 2), and silicon layers 4 to 9 are sequentially formed on the transparent electrode substrate by a plasma CVD method, and a sputtering method is further formed thereon. Then, a diffusion prevention layer 10 and a back electrode film 11 are formed.
【００２４】次に、本発明による透明電極基板及び光起
電力素子の特性について説明する。 （実施例１）図１，図３におけるアルミニウム化合物膜
２として酸化アルミニウムを用いた透明電極基板，光起
電力素子を製造し、夫々の特性を測定した。また、比較
例として、酸化アルミニウムからなるアルミニウム化合
物膜を設けない透明電極基板，光起電力素子を製造し、
夫々の特性も測定した。これらの測定結果を表１（透明
電極基板の特性），表２（１ｃｍセルの光起電力素子の
特性）に示す。Next, the characteristics of the transparent electrode substrate and the photovoltaic element according to the present invention will be described. Example 1 A transparent electrode substrate and a photovoltaic element using aluminum oxide as the aluminum compound film 2 in FIGS. 1 and 3 were manufactured, and their characteristics were measured. Further, as a comparative example, a transparent electrode substrate and a photovoltaic element without an aluminum compound film made of aluminum oxide were manufactured.
Each property was also measured. These measurement results are shown in Table 1 (characteristics of the transparent electrode substrate) and Table 2 (characteristics of the photovoltaic element of the 1 cm cell).
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【表２】 [Table 2]
【００２７】比較例の透明電極基板にあっては、透明導
電性膜の表面が平坦であって充分なヘイズ率が得られて
いない。これに対して、表面が凹凸のアルミニウム化合
物膜（酸化アルミニウム膜）を設けた本発明の透明電極
基板では、透明導電性膜の表面が凹凸化して充分なヘイ
ズ率を達成できている。この結果、これを用いる本発明
の光起電力素子では、特に短絡電流（ＩSC）及び最大起
電力Ｐmax が大幅に向上している。In the transparent electrode substrate of the comparative example, the surface of the transparent conductive film was flat and a sufficient haze ratio was not obtained. On the other hand, in the transparent electrode substrate of the present invention provided with an aluminum compound film (aluminum oxide film) having an uneven surface, the surface of the transparent conductive film is made uneven to achieve a sufficient haze ratio. As a result, in the photovoltaic element of the present invention using the same, the short-circuit current (I SC ) and the maximum electromotive force P max have been significantly improved.
【００２８】（実施例２）図１，図３におけるアルミニ
ウム化合物膜２として窒化アルミニウムを用いた透明電
極基板，光起電力素子を製造し、夫々の特性を測定し
た。また、比較例として、窒化アルミニウムからなるア
ルミニウム化合物膜を設けない透明電極基板，光起電力
素子を製造し、夫々の特性も測定した。これらの測定結
果を表３（透明電極基板の特性），表４（１ｃｍセルの
光起電力素子の特性）に示す。Example 2 A transparent electrode substrate and a photovoltaic element using aluminum nitride as the aluminum compound film 2 in FIGS. 1 and 3 were manufactured, and their characteristics were measured. Further, as a comparative example, a transparent electrode substrate and a photovoltaic element without an aluminum compound film made of aluminum nitride were manufactured, and their respective characteristics were measured. The measurement results are shown in Table 3 (characteristics of the transparent electrode substrate) and Table 4 (characteristics of the photovoltaic element of the 1 cm cell).
【００２９】[0029]
【表３】 [Table 3]
【００３０】[0030]
【表４】 [Table 4]
【００３１】比較例の透明電極基板にあっては、透明導
電性膜の表面が平坦であって充分なヘイズ率が得られて
いない。これに対して、表面が凹凸のアルミニウム化合
物膜（窒化アルミニウム膜）を設けた本発明の透明電極
基板では、透明導電性膜の表面が凹凸化して充分なヘイ
ズ率を達成できている。この結果、これを用いる本発明
の光起電力素子では、特に短絡電流（ＩSC）及び最大起
電力（Ｐmax ）が大幅に向上している。In the transparent electrode substrate of the comparative example, the surface of the transparent conductive film was flat and a sufficient haze ratio was not obtained. On the other hand, in the transparent electrode substrate of the present invention provided with an aluminum compound film (aluminum nitride film) having an uneven surface, the surface of the transparent conductive film is made uneven to achieve a sufficient haze ratio. As a result, in the photovoltaic device of the present invention using the same, the short-circuit current (I SC ) and the maximum electromotive force (P max ) are particularly improved.
【００３２】なお、上述した例では、アルミニウム膜を
形成し、それをエッチングした後に酸化または窒化する
ようにしたが、酸化アルミニウムの粉末を使用すること
も可能である。この場合には、酸化アルミニウムの粉末
を溶媒に溶かしたペーストを透光性基板上に塗布し、そ
の塗布した膜にエッチング処理を施して表面を凹凸化す
れば、全く同様に、テクスチャ構造を有する透明導電性
膜を形成することができる。In the above-described example, the aluminum film is formed, and is oxidized or nitrided after etching the aluminum film. However, it is also possible to use aluminum oxide powder. In this case, a paste obtained by dissolving a powder of aluminum oxide in a solvent is applied on a light-transmitting substrate, and the applied film is subjected to an etching treatment to make the surface uneven, so that the textured structure is exactly the same. A transparent conductive film can be formed.
【００３３】[0033]
【発明の効果】以上のように本発明では、スパッタリン
グ法によって透明導電性膜を形成する場合にあっても、
表面が凹凸形状をなす透明導電性膜を有する透明電極基
板を得ることができ、高いヘイズ率を持つ透明電極基板
を提供できる。As described above, according to the present invention, even when a transparent conductive film is formed by a sputtering method,
A transparent electrode substrate having a transparent conductive film having an uneven surface can be obtained, and a transparent electrode substrate having a high haze ratio can be provided.
【００３４】また、このような透明電極基板を用いるよ
うにしたので、光の有効利用を図って優れた光電変換特
性を持つ光電変換素子を提供できる。Further, since such a transparent electrode substrate is used, a photoelectric conversion element having excellent photoelectric conversion characteristics can be provided by effectively utilizing light.
【図１】本発明の透明電極基板の構成図である。FIG. 1 is a configuration diagram of a transparent electrode substrate of the present invention.
【図２】本発明の透明電極基板の作製方法の工程を示す
図である。FIG. 2 is a diagram showing steps of a method for manufacturing a transparent electrode substrate of the present invention.
【図３】本発明の光起電力素子の構成図である。FIG. 3 is a configuration diagram of a photovoltaic element of the present invention.
１ 透光性基板 ２ アルミニウム化合物膜 ３ 透明導電性膜 ２１ アルミニウム膜 REFERENCE SIGNS LIST 1 translucent substrate 2 aluminum compound film 3 transparent conductive film 21 aluminum film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松見 伸 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 Ｆターム(参考） 5F051 CB15 CB27 DA04 DA17 FA02 FA03 FA04 FA18 FA19 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shin Matsumi 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term (reference) in Sanyo Electric Co., Ltd. 5F051 CB15 CB27 DA04 DA17 FA02 FA03 FA04 FA18 FA19
Claims (4)
光性基板に形成してなる透明電極基板において、前記透
光性基板と前記透明導電性膜との間に、凹凸化したアル
ミニウム化合物膜を備えることを特徴とする透明電極基
板。1. A transparent electrode substrate formed by forming a transparent conductive film on a light-transmitting substrate by a sputtering method, wherein an uneven aluminum compound film is formed between the light-transmitting substrate and the transparent conductive film. A transparent electrode substrate comprising:
ミニウム膜または窒化アルミニウム膜である請求項１記
載の透明電極基板。2. The transparent electrode substrate according to claim 1, wherein said aluminum compound film is an aluminum oxide film or an aluminum nitride film.
備えることを特徴とする光起電力素子。3. A photovoltaic device comprising the transparent electrode substrate according to claim 1.
光性基板に形成してなる透明電極基板を作製する方法に
おいて、前記透光性基板にアルミニウム膜を形成する工
程と、形成したアルミニウム膜をエッチングして凹凸化
する工程と、アルミニウム膜をアルミニウム化合物膜に
変化させる工程と、アルミニウム化合物膜にスパッタリ
ング法にて透明導電性膜を形成する工程とを有すること
を特徴とする透明電極基板の作製方法。4. A method for manufacturing a transparent electrode substrate comprising a transparent conductive film formed on a light-transmitting substrate by a sputtering method, wherein: a step of forming an aluminum film on the light-transmitting substrate; A step of forming a transparent conductive film by sputtering on the aluminum compound film, and a step of changing the aluminum film to an aluminum compound film, and a step of changing the aluminum film to an aluminum compound film. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31622398A JP3776606B2 (en) | 1998-11-06 | 1998-11-06 | Method for producing transparent electrode substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31622398A JP3776606B2 (en) | 1998-11-06 | 1998-11-06 | Method for producing transparent electrode substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000150928A true JP2000150928A (en) | 2000-05-30 |
| JP3776606B2 JP3776606B2 (en) | 2006-05-17 |
Family
ID=18074685
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31622398A Expired - Fee Related JP3776606B2 (en) | 1998-11-06 | 1998-11-06 | Method for producing transparent electrode substrate |
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| Country | Link |
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| JP (1) | JP3776606B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222975A (en) * | 2001-01-29 | 2002-08-09 | Kyocera Corp | THIN FILM CRYSTALLINE Si SOLAR BATTERY AND ITS MANUFACTURING METHOD |
| JP2006128478A (en) * | 2004-10-29 | 2006-05-18 | Mitsubishi Heavy Ind Ltd | Photoelectric converter |
| WO2009089201A3 (en) * | 2008-01-07 | 2009-10-22 | Rosestreet Labs Energy, Inc. | Group iii-nitride solar cell with graded compositions |
| JP2010526430A (en) * | 2007-05-04 | 2010-07-29 | サン−ゴバン グラス フランス | Transparent substrate with improved electrode layer |
| CN102044593A (en) * | 2009-10-19 | 2011-05-04 | 杜邦太阳能有限公司 | Process of manufacturing TCO substrate with light trapping feature and device thereof |
| FR2961954A1 (en) * | 2010-06-25 | 2011-12-30 | Saint Gobain | CELL COMPRISING A CADMIUM-BASED PHOTOVOLTAIC MATERIAL |
| US8129611B2 (en) | 2004-12-10 | 2012-03-06 | Mitsubishi Heavy Industries, Ltd. | Light-scattering film and optical device using the same |
-
1998
- 1998-11-06 JP JP31622398A patent/JP3776606B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222975A (en) * | 2001-01-29 | 2002-08-09 | Kyocera Corp | THIN FILM CRYSTALLINE Si SOLAR BATTERY AND ITS MANUFACTURING METHOD |
| JP2006128478A (en) * | 2004-10-29 | 2006-05-18 | Mitsubishi Heavy Ind Ltd | Photoelectric converter |
| US8129611B2 (en) | 2004-12-10 | 2012-03-06 | Mitsubishi Heavy Industries, Ltd. | Light-scattering film and optical device using the same |
| JP2010526430A (en) * | 2007-05-04 | 2010-07-29 | サン−ゴバン グラス フランス | Transparent substrate with improved electrode layer |
| WO2009089201A3 (en) * | 2008-01-07 | 2009-10-22 | Rosestreet Labs Energy, Inc. | Group iii-nitride solar cell with graded compositions |
| CN102044593A (en) * | 2009-10-19 | 2011-05-04 | 杜邦太阳能有限公司 | Process of manufacturing TCO substrate with light trapping feature and device thereof |
| FR2961954A1 (en) * | 2010-06-25 | 2011-12-30 | Saint Gobain | CELL COMPRISING A CADMIUM-BASED PHOTOVOLTAIC MATERIAL |
| EP2400556A3 (en) * | 2010-06-25 | 2012-06-27 | Saint-Gobain Glass France | Cell including a cadmium-based photovoltaic material |
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|---|---|
| JP3776606B2 (en) | 2006-05-17 |
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