JP2000143334A - Sintered i.t.o, its production and i.t.o thin film - Google Patents
Sintered i.t.o, its production and i.t.o thin filmInfo
- Publication number
- JP2000143334A JP2000143334A JP10317298A JP31729898A JP2000143334A JP 2000143334 A JP2000143334 A JP 2000143334A JP 10317298 A JP10317298 A JP 10317298A JP 31729898 A JP31729898 A JP 31729898A JP 2000143334 A JP2000143334 A JP 2000143334A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide
- sintered body
- sno
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は透明導電膜形成のた
めの真空成膜用のＩ．Ｔ．Ｏ焼結体とその製造方法及び
Ｉ．Ｔ．Ｏ薄膜に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an I.V. T. O sintered body, its manufacturing method and I. T. It relates to an O thin film.
【０００２】[0002]
【従来の技術】酸化インジウム（Ｉｎ2 Ｏ3 ）及び酸化
錫（ＳｎＯ2 ）からなるＩ．Ｔ．Ｏ焼結体は、真空成膜
法の真空蒸着用ペレットまたはスパッタリング用ターゲ
ットとして使用する事で、透明電極、帯電防止、電磁波
遮断、面発熱体、熱線遮断、光電変換素子等の透明導電
膜として幅広く用いられている。 2. Description of the Related Art An I.O.I. made of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ). T. The O sintered body is used as a transparent electrode, antistatic, electromagnetic wave shielding, surface heating element, heat ray shielding, transparent conductive film for photoelectric conversion elements, etc. by using it as a pellet for vacuum evaporation or a target for sputtering in a vacuum film forming method. Widely used.
【０００３】その中でも、ＬＣＤ（液晶ディスプレイ）
の大型化、高精細、高画質化により、透明電極として用
いられるＩ．Ｔ．Ｏ膜への特性要求も厳しくなつてい
る。特に低抵抗化は大きな課題である。[0003] Among them, LCD (liquid crystal display)
Is used as a transparent electrode because of its large size, high definition, and high image quality. T. Demands on the characteristics of the O film are also becoming severe. In particular, reducing the resistance is a major issue.
【０００４】真空成膜法にてＩ．Ｔ．Ｏ焼結体から良質
の透明導電膜を得る方法として次の様な報告がなされて
いる。まず、特開平３−１２６６５５号公報には、凝集
性のない平均粒径０．ｌμｍ以下の酸化インジウム−酸
化錫粉末にバインダーを添加して混合成形した後、１５
００℃以上の酸素雰囲気中で焼結する方法が開示されて
いる。特開平３−１５０２５３号公報には、１２００℃
〜１３００℃の酸素雰囲気中で一旦焼結し、次いで５０
０〜１３００℃の減圧または不活性ガス雰囲気中で熱処
理する方法が開示されている。In a vacuum film forming method, I.P. T. The following report has been made as a method for obtaining a high-quality transparent conductive film from an O sintered compact. First, Japanese Patent Application Laid-Open No. 3-126655 discloses an average particle size of 0.3 with no cohesiveness. After adding a binder to indium oxide-tin oxide powder of 1 μm or less and mixing and molding,
A method of sintering in an oxygen atmosphere of 00 ° C. or higher is disclosed. JP-A-3-150253 discloses that the temperature is 1200 ° C.
Once sintered in an oxygen atmosphere at ~ 1300 ° C, then
A method of performing heat treatment in a reduced pressure of 0 to 1300 ° C. or in an inert gas atmosphere is disclosed.
【０００５】特開平６−３１６７６０号公報において
は、酸化錫−酸化インジウム粉末を大気中にて仮焼き
し、仮焼き後の粉末を混合・造粒・成形し９００℃〜１
１００℃の焼結温度で焼結とする方法が開示されてい
る。また、「機能材料」Ｖｏｌ．１１，Ｎｏ．３（１９
９１）の中で密度６３％のＩ．Ｔ．ＯターゲットのＩ．
Ｔ．Ｏ膜の比抵抗は、スパッタ・パワーにより膜中のＳ
ｎＯ2 量の差が大きく起因し、使用するスパッタ装置や
条件に最適のＳｎＯ 2 量を考慮したターゲットを使用す
ることは、非常に重要であることが記載されている。In Japanese Patent Application Laid-Open No. 6-316760,
Calcinates tin oxide-indium oxide powder in air
The calcined powder is mixed, granulated and molded to 900 ° C-1
A method for sintering at a sintering temperature of 100 ° C. is disclosed.
You. In addition, “Functional Materials” Vol. 11, No. 3 (19
91) having a density of 63%. T. I of the O target
T. The specific resistance of the O film is determined by the sputtering power
nOTwo Due to the large difference in the amount, the sputtering equipment used and
Optimal SnO for conditions Two Use volume-aware targets
Is described as being very important.
【０００６】さらに、「ニューガラス」Ｖｏｌ．７，Ｎ
ｏ．２（１９９２）でも、装置によって多少の違いがあ
るものの真空蒸着でのＩ．Ｔ．ＯペレットのＳｎＯ2 添
加の最適量は５ｗｔ％前後の添加量に比抵抗は最も近い
値を示すことが記載されている。Further, "New Glass" Vol. 7, N
o. 2 (1992), although there are some differences depending on the device, I.V. T. It is described that the optimum amount of SnO 2 added to the O pellets shows a value closest to the specific resistance when the added amount is around 5 wt%.
【０００７】[0007]
【発明が解決しようとする課題】前述したように、従来
の真空成膜法にてＩ．Ｔ．Ｏ焼結体から良質の透明導電
膜を得るには、真空成膜法の真空蒸着用Ｉ．Ｔ．Ｏペレ
ットまたはスパッタリング用Ｉ．Ｔ．Ｏターゲットの密
度及び厳密なＳｎＯ2 含有量の最適化や真空蒸着装置条
件の精密な管理を行わなければならず、再現よく安定し
た比抵抗を持つ透明導電Ｉ．Ｔ．Ｏ薄膜を得るのは困難
である。As described above, the I.V. T. In order to obtain a high-quality transparent conductive film from an O sintered body, it is necessary to use a vacuum deposition method for vacuum deposition I.I. T. O pellets or I. T. It is necessary to optimize the density of the O target and the strict SnO 2 content and to precisely control the conditions of the vacuum deposition apparatus. T. It is difficult to obtain an O thin film.
【０００８】本発明は、この様な従来技術の問題点を解
決するためになされたものであり、焼結体中のＳｎＯ2
のばらつき（Ｉ．Ｔ．Ｏ薄膜中のＳｎＯ2 量の差）に影
響されにくく、高透過率を持ち再現よく安定した比抵抗
を持つＩ．Ｔ．Ｏ焼結体および透明導電Ｉ．Ｔ．Ｏ薄膜
を提供することを目的とするものである。The present invention has been made to solve such problems of the prior art, and is intended to solve the problem of SnO 2 in a sintered body.
(A difference in the amount of SnO 2 in the ITO thin film), and has a high transmittance, a reproducible and stable specific resistance. T. O sintered body and transparent conductive T. It is intended to provide an O thin film.
【０００９】さらに、本発明は、高透過率を持つ透明導
電Ｉ．Ｔ．Ｏ薄膜を提供出来る為、透明導電膜としての
透過率（８０％以上）を失しない範囲で膜厚を増やす事
ができ、膜全体の抵抗を低くできるＩ．Ｔ．Ｏ薄膜を提
供することを目的とするものである。Further, the present invention provides a transparent conductive material having a high transmittance. T. Since an O thin film can be provided, the thickness can be increased within a range that does not lose the transmittance (80% or more) as a transparent conductive film, and the resistance of the entire film can be reduced. T. It is intended to provide an O thin film.
【００１０】[0010]
【課題を解決するための手段】即ち、本発明は、主成分
として酸化インジウム（以下、Ｉｎ2 Ｏ3 と記す）、酸
化錫（以下、ＳｎＯ2 と記す）及び酸化スカンジウム
（以下、Ｓｃ2 Ｏ3 と記す）を含有する事を特徴とする
Ｉ．Ｔ．Ｏ焼結体に係るものである。That is, the present invention provides, as main components, indium oxide (hereinafter referred to as In 2 O 3 ), tin oxide (hereinafter referred to as SnO 2 ), and scandium oxide (hereinafter referred to as Sc 2 O). 3 and referred to as) I. which is characterized in that it contains the T. It relates to an O sintered compact.
【００１１】また、本発明は、主成分としてＩｎ2 Ｏ3
及びＳｎＯ2 及びＳｃ2 Ｏ3 の粉末を混合、成形し、加
熱して焼結する事を特徴とするＩ．Ｔ．Ｏ焼結体の製造
方法である。[0011] The present invention also relates to the present invention, wherein In 2 O 3
I. and SnO 2 and Sc 2 O 3 powders are mixed, molded, heated and sintered. T. This is a method for producing an O sintered body.
【００１２】本発明において、上記のＩｎ2 Ｏ3 及びＳ
ｃ2 Ｏ3 とＳｎＯ2 の割合が重量比で（Ｉｎ2 Ｏ3 ＋Ｓ
ｃ2 Ｏ3 ）：ＳｎＯ2 ＝９９〜９３：１〜７であるのが
好ましい。Ｓｃ2 Ｏ3 の含有量がＩｎ2 Ｏ3 との重量比
でＩｎ2 Ｏ3 ：Ｓｃ2 Ｏ3 ＝９９．８〜６０：０．２〜
４０であるのが好ましい。In the present invention, the above In 2 O 3 and S
The ratio of c 2 O 3 and SnO 2 is (In 2 O 3 + S
c 2 O 3): SnO 2 = 99~93: it is preferably 1-7. Sc 2 O content of 3 an In 2 O 3 an In in a weight ratio of between 2 O 3: Sc 2 O 3 = 99.8~60: 0.2~
Preferably it is 40.
【００１３】さらに、本発明は、上記のＩ．Ｔ．Ｏ焼結
体を蒸着してなることを特徴とするＩ．Ｔ．Ｏ薄膜であ
る。上記の薄膜の表面から基板との間にスカンジウム
（Ｓｃ）が均一に分散し、同量含有するのが好ましい。
薄膜中の錫（Ｓｎ）の含有量の相違にかかわらず同じ体
積抵抗率が得られるのが好ましい。Furthermore, the present invention relates to the above-mentioned I.D. T. I. An O. sintered body is deposited. T. O thin film. It is preferable that scandium (Sc) be uniformly dispersed between the surface of the thin film and the substrate and be contained in the same amount.
It is preferable that the same volume resistivity can be obtained irrespective of the difference in the content of tin (Sn) in the thin film.
【００１４】[0014]
【発明の実施の形態】上記目的を達成する為、本発明
は、主成分としてＩｎ2 Ｏ3 及びＳｎＯ2 からなるＩ．
Ｔ．Ｏ粉末にＳｃ2 Ｏ3 を添加する事を特徴とする。DETAILED DESCRIPTION OF THE INVENTION To achieve the above object, the present invention consists of In 2 O 3 and SnO 2 as a main component I.
T. It is characterized by adding Sc 2 O 3 to O powder.
【００１５】上記のＩｎ2 Ｏ3 及びＳｃ2 Ｏ3 とＳｎＯ
2 の割合が重量比で（Ｉｎ2 Ｏ3 ＋Ｓｃ2 Ｏ3 ）：Ｓｎ
Ｏ2 ＝９９〜９４：１〜７、さらに好ましくは９８〜９
４：２〜６であるのが望ましい。上記のＩｎ2 Ｏ3 、Ｓ
ｃ2 Ｏ3 およびＳｎＯ2 の割合とすることにより、真空
成膜により、スプラッシュが全く発生せず透過率９１％
以上、体積抵抗率３．３×ｌ０-4Ω・ｃｍ以下を示す様
に動作する。The above In 2 O 3, Sc 2 O 3 and SnO
2 is a weight ratio of (In 2 O 3 + Sc 2 O 3 ): Sn
O 2 = 99 to 94: 1 to 7, more preferably 98 to 9
4: 2-6 is desirable. The above In 2 O 3 , S
By setting the ratio of c 2 O 3 and SnO 2 , no splash is generated and the transmittance is 91% due to vacuum film formation.
As described above, the device operates so as to exhibit a volume resistivity of 3.3 × 10 −4 Ω · cm or less.
【００１６】また、Ｓｃ2 Ｏ3 の含有量がＩｎ2 Ｏ3 と
の重量比でＩｎ2 Ｏ3 ：Ｓｃ2 Ｏ3＝９９．８〜６０：
０．２〜４０、好ましくは９９．７〜６２：０．３〜３
８であるのが望ましい。上記のＩｎ2 Ｏ3 およびＳｃ2
Ｏ3 の割合とすることにより、真空成膜によりスプラッ
シュが全く発生せず透過率９１％以上、体積抵抗率７×
ｌ０-4Ω・ｃｍ以下を示す様に動作する。Further, Sc 2 O 3 content is an In 2 an In in a weight ratio of O 3 2 O 3: Sc 2 O 3 = 99.8~60:
0.2-40, preferably 99.7-62: 0.3-3
8 is desirable. The above In 2 O 3 and Sc 2
By setting the proportion of O 3 , no splash occurs due to vacuum film formation, the transmittance is 91% or more, and the volume resistivity is 7 ×.
It operates so as to show 10-4 Ω · cm or less.
【００１７】本発明のＩ．Ｔ．Ｏ焼結体の製造方法は、
主成分としてＩｎ2 Ｏ3 、ＳｎＯ2及びＳｃ2 Ｏ3 の粉
末を混合、成形し、加熱して焼結することにより行な
う。成形および加熱焼結の方法は、特に制限することな
く、通常の方法で行なうことができ、例えば成形方法と
しては一軸加圧成形法が、加熱焼結方法としては大気中
にて加熱、焼成する事が挙げられる。In the present invention, I.I. T. The manufacturing method of the O sintered body
This is performed by mixing, molding, heating and sintering powders of In 2 O 3 , SnO 2 and Sc 2 O 3 as main components. The method of molding and heat sintering can be performed by a usual method without any particular limitation. Things are mentioned.
【００１８】本発明のＩ．Ｔ．Ｏ薄膜は、上記のＩ．
Ｔ．Ｏ焼結体を蒸着して成膜することにより得られる。
成膜方法は、特に制限することなく、通常の方法で行な
うことができる。Ｉ．Ｔ．Ｏ焼結体を蒸着してなる薄膜
は、薄膜の表面から基板との間にＳｃが均一に分散し、
同量含有する。また、Ｉ．Ｔ．Ｏ焼結体を蒸着してなる
薄膜は、薄膜中のＳｎ含有量の相違にかかわらず、同じ
体積抵抗率が得られる。ＬＣＤ用Ｉ．Ｔ．Ｏ薄膜の体積
抵抗率は１．０×１０-4〜３．５×１０-4Ω・ｃｍの範
囲で同じ値が好ましい。I. of the present invention. T. The O thin film is obtained from the above I.O.
T. It is obtained by depositing an O sintered body to form a film.
The film formation method can be performed by a usual method without any particular limitation. I. T. In the thin film formed by depositing the O sintered body, Sc is uniformly dispersed between the surface of the thin film and the substrate,
Contains the same amount. In addition, I. T. A thin film obtained by depositing an O sintered body can obtain the same volume resistivity regardless of the difference in the Sn content in the thin film. I. for LCD T. The same value is preferable for the volume resistivity of the O thin film in the range of 1.0 × 10 −4 to 3.5 × 10 −4 Ω · cm.
【００１９】[0019]
【実施例】以下に、実施例を用いて本発明を説明する。The present invention will be described below with reference to examples.
【００２０】実施例１ Ｉｎ2 Ｏ3 及びＳｃ2 Ｏ3 とＳｎＯ2 の割合が重量比で
（Ｉｎ2 Ｏ3 ＋Ｓｃ2Ｏ3 ）：ＳｎＯ2 ＝９９〜９４：
ｌ〜７（ＳｎＯ2 １〜７％）となるようにする。好まし
くはＳｎＯ2 を２〜６％加える。本実施例においては、
ＳｎＯ2 を２％加えた。Example 1 In 2 O 3 and the ratio of Sc 2 O 3 to SnO 2 are expressed by weight ratio (In 2 O 3 + Sc 2 O 3 ): SnO 2 = 99 to 94:
1 to 7 (SnO 2 1 to 7%). Preferably, 2 to 6% of SnO2 is added. In this embodiment,
2% of SnO 2 was added.
【００２１】次いで、Ｉｎ2 Ｏ3 とＳｃ2 Ｏ3 （純度９
９．９％、ＩＣＰ発光分析による不純物分析結果（ｐｐ
ｍ）：Ｃａ ２５、Ｙ １８０、Ｄｙ ５２、Ｈｏ ３
０、Ｅｒ ３０、Ｔｍ １５、Ｙｂ ９０、Ｌｕ ２
５）の割合が重量比でＩｎ2 Ｏ 3 ：Ｓｃ2 Ｏ3 ＝９９．
５：０．５となるようにそれぞれ加える。この混合物を
ボールミルを使って十分に細かい粒状形状にしながら混
ぜ合わせる。Next, InTwo OThree And ScTwo OThree (Purity 9
9.9%, impurity analysis result by ICP emission analysis (pp
m): Ca 25, Y 180, Dy 52, Ho 3
0, Er 30, Tm 15, Yb 90, Lu 2
5) The ratio by weight is InTwo O Three : ScTwo OThree = 99.
Add 5: 0.5 each. This mixture
Use a ball mill to make a sufficiently fine granular
Combine.
【００２２】その後、プレス圧力１３００ｋｇｆ／ｃｍ
2 で大きさが１７角ｍｍ×２０t ｍｍのペレット形状に
成形する。プレス後大気中にて温度１３５０℃で加熱
し、Ｉ．Ｔ．Ｏ焼結体を得る。Thereafter, a pressing pressure of 1300 kgf / cm
2. Form into a pellet shape of 17 square mm x 20 t mm in size. After pressing, it was heated at a temperature of 1350 ° C. in the atmosphere, and I.P. T. Obtain an O sintered body.
【００２３】通常の真空蒸着装置の電子ビーム蒸発源部
に、このＩ．Ｔ．Ｏ焼結体を設置し酸素ガス圧５×ｌ０
-4ｔｏｒｒ、基板温度３００℃の雰囲気で成膜速度３．
０Å／ｓｅｃで合成石英基板上に膜厚１２００ÅのＩ．
Ｔ．Ｏ膜を作製した。得られたＩ．Ｔ．Ｏ膜の透過率は
波長５５０ｎｍで９５％、四端子法により測定した体積
抵抗率は３．２×ｌ０-4Ω・ｃｍであった。[0023] The I.V. T. O sintered body is installed and oxygen gas pressure is 5 × 10
2. Deposition rate in an atmosphere of -4 torr and a substrate temperature of 300 ° C.
0 ° / sec, I.P.
T. An O film was produced. The obtained I. T. The transmittance of the O film was 95% at a wavelength of 550 nm, and the volume resistivity measured by a four probe method was 3.2 × 10 −4 Ω · cm.
【００２４】また、２次イオン質量分析（以下、ＳＩＭ
Ｓ分析と略す）にてＩ．Ｔ．Ｏ膜中のＳｎ、Ｓｃの分散
状態を測定したところ、120 Ｓｎ+ の強度は２×１０3
（ｃｏｕｎｔｓ）、45Ｓｃ+ の強度は２×ｌ０4 （ｃｏ
ｕｎｔｓ）であり、膜中で均一に分散している事を確認
した。Further, secondary ion mass spectrometry (hereinafter, SIM)
S analysis). T. When the dispersion state of Sn and Sc in the O film was measured, the intensity of 120 Sn + was 2 × 10 3
(Counts), the intensity of 45 Sc + is 2 × 10 4 (co
unts), and it was confirmed that the particles were uniformly dispersed in the film.
【００２５】実施例２ ＳｎＯ2 の成分が６％である事以外は、実施例１と同様
にＩ．Ｔ．Ｏ焼結体を作製し、蒸着を行った。得られた
薄膜の波長５５０ｎｍでの透過率は９６％、体積抵抗率
は３．０×ｌ０-4Ω・ｃｍであった。ＳＩＭＳ分析によ
るＩ．Ｔ．Ｏ膜中のＳｎ、Ｓｃの分散状態を測定したと
ころ、120 Ｓｎ+ の強度は４．５×１０3 （ｃｏｕｎｔ
ｓ）、 45Ｓｃ+ の強度は２×ｌ０4 （ｃｏｕｎｔｓ）で
あり、膜中で均一に分散している事を確認した。Example 2 SnOTwo Same as Example 1 except that the component was 6%
I. T. An O-sintered body was prepared and vapor-deposited. Got
96% transmittance at 550nm wavelength, volume resistivity
Is 3.0 × 10-FourΩ · cm. By SIMS analysis
I. T. When the dispersion state of Sn and Sc in the O film was measured.
By the time,120 Sn+ Has a strength of 4.5 × 10Three (Count
s), 45Sc+ Is 2 × 10Four (Counts)
Yes, it was confirmed that they were uniformly dispersed in the film.
【００２６】さらにＳＩＭＳ分析によるＩ．Ｔ．Ｏ膜中
の113 Ｉｎ+ の測定を行ったところ、実施例１及び２と
も強度は１．２×１０5 （ｃｏｕｎｔｓ）であった。実
施例１及び２からのＳＩＭＳ分析によれば、Ｉ．Ｔ．Ｏ
膜中にＳｃが同量含有していればＳｎの含有量が３倍程
度の差があっても、高透過率で同じ体積抵抗率を持つ
Ｉ．Ｔ．Ｏ薄膜が得られる事が解る。Further, I.V. T. When 113 In + in the O film was measured, the strength was 1.2 × 10 5 (counts) in both Examples 1 and 2. According to the SIMS analysis from Examples 1 and 2, I.V. T. O
If the same amount of Sc is contained in the film, even if the Sn content has a difference of about three times, the I.V. T. It can be seen that an O thin film is obtained.
【００２７】尚、ＳｎＯ2 の成分が１〜７％の範囲であ
り、かつＳｃ2 Ｏ3 の含有量がＩｎ 2 Ｏ3 との重量比で
０．２〜１．５％である場合、波長５５０ｎｍでの透過
率は９１％以上、体積抵抗率で２．７〜３．３×ｌ０-4
Ω・ｃｍの範囲にあり、ＳＩＭＳ分析においては本実施
例と同じ結果を得た。It should be noted that SnOTwo Is in the range of 1 to 7%
And ScTwo OThree Content of In Two OThree In weight ratio with
Transmission at a wavelength of 550 nm when 0.2-1.5%
The ratio is 91% or more, and the volume resistivity is 2.7 to 3.3 × 10.-Four
It is in the range of Ω · cm.
The same result as the example was obtained.
【００２８】比較例１ ＳｎＯ2 の成分が１％未満である０．５％である事以外
は、実施例１と同様にＩ．Ｔ．Ｏ焼結体を作製し、蒸着
を行った。得られた薄膜の波長５５０ｎｍでの透過率は
８２％、体積抵抗率は３．５×ｌ０-4Ω・ｃｍであっ
た。Comparative Example 1 The same procedure as in Example 1 was repeated except that the content of SnO 2 was less than 1% and 0.5%. T. An O-sintered body was prepared and vapor-deposited. The transmittance of the obtained thin film at a wavelength of 550 nm was 82%, and the volume resistivity was 3.5 × 10 −4 Ω · cm.
【００２９】比較例２ ＳｎＯ2 の成分が７％を越える１０％である事以外は、
実施例１と同様にＩ．Ｔ．Ｏ焼結体を作製し、蒸着を行
った。得られた薄膜の波長５５０ｎｍでの透過率は５４
％であった。COMPARATIVE EXAMPLE 2 Except that the content of SnO 2 was 10% exceeding 7%,
As in Example 1, I. T. An O-sintered body was prepared and vapor-deposited. The transmittance of the obtained thin film at a wavelength of 550 nm is 54.
%Met.
【００３０】実施例３ Ｉｎ2 Ｏ3 及びＳｃ2 Ｏ3 とＳｎＯ2 の割合が重量比で
（Ｉｎ2 Ｏ3 ＋Ｓｃ2Ｏ3 ）：ＳｎＯ2 ＝９５：５とな
るようにする。ついでＩｎ2 Ｏ3 とＳｃ2 Ｏ3の割合が
重量比でＩｎ2 Ｏ3 ：Ｓｃ2 Ｏ3 ＝９９．８〜６０．
０：０．２〜４０（Ｓｃ2 Ｏ3 ０．２〜４０％）となる
ようにそれぞれ加える。好ましくはＳｃ2Ｏ3 を０．３
〜３８％加える。本実施例においては、Ｓｃ2 Ｏ3 を５
％加えた。この混合物をボールミルを使って十分に細か
い粒状形状にしながら混ぜ合わせる。Example 3 The proportions of In 2 O 3, Sc 2 O 3 and SnO 2 are adjusted so that the weight ratio is (In 2 O 3 + Sc 2 O 3 ): SnO 2 = 95: 5. Then In 2 O 3 and Sc 2 an In at a ratio of O 3 weight ratio 2 O 3: Sc 2 O 3 = 99.8~60.
0: 0.2 to 40 (Sc 2 O 3 0.2 to 40%). Preferably, Sc 2 O 3 is 0.3
Add ~ 38%. In this embodiment, Sc 2 O 3 is 5
%added. The mixture is mixed using a ball mill while making it into a sufficiently fine granular form.
【００３１】その後プレス圧力１３００ｋｇｆ／ｃｍ2
で大きさが１７角ｍｍ×２０t ｍｍのペレット形状に成
形する。プレス後大気中にて侃度１３５０℃で加熱し、
Ｉ．Ｔ．Ｏ焼結体を得る。Thereafter, the pressing pressure was 1300 kgf / cm 2
To form a pellet having a size of 17 square mm × 20 t mm. After pressing, heat at 1350 ° C in the air,
I. T. Obtain an O sintered body.
【００３２】次に、実施例１と同様に蒸着を行った。得
られた薄膜の波長５５０ｎｍでの透過率は９４％、体積
抵抗率は３．８×ｌ０-4Ω・ｃｍであった。Next, vapor deposition was performed in the same manner as in Example 1. The transmittance of the obtained thin film at a wavelength of 550 nm was 94%, and the volume resistivity was 3.8 × 10 −4 Ω · cm.
【００３３】実施例４ Ｓｃ2 Ｏ3 の成分が３５．０％である事以外は、実施例
５と同様にＩ．Ｔ．Ｏ焼結体を作製し、蒸着を行った。
得られた薄膜の波長５５０ｎｍでの透過率は９２％、体
積抵抗率は６．２×ｌ０-4Ω・ｃｍであった。Example 4 The same procedure as in Example 5 was repeated except that the content of Sc 2 O 3 was 35.0%. T. An O-sintered body was prepared and vapor-deposited.
The transmittance of the obtained thin film at a wavelength of 550 nm was 92%, and the volume resistivity was 6.2 × 10 −4 Ω · cm.
【００３４】尚、Ｓｃ2 Ｏ3 の成分が０．２〜４０％の
範囲である場合、得られた薄膜の波長５５０ｎｍでの透
過率は９１％以上、体積抵抗率で２．７〜７．０×ｌ０
-4Ω・ｃｍの範囲にある事を確認した。When the content of Sc 2 O 3 is in the range of 0.2 to 40%, the transmittance of the obtained thin film at a wavelength of 550 nm is 91% or more, and the volume resistivity is 2.7 to 7.0. 0 × 10
It was confirmed that it was in the range of -4 Ω · cm.
【００３５】比較例３ Ｓｃ2 Ｏ3 が０．２％未満である０．１％である事以外
は、実施例５と同様にＩ．Ｔ．Ｏ焼結体を作製し、蒸着
を行った。得られた薄膜の波長５５０ｎｍでの透過率は
８４％、体積抵抗率は９．７×ｌ０-4Ω・ｃｍであっ
た。COMPARATIVE EXAMPLE 3 Except that the content of Sc 2 O 3 is less than 0.2%, ie, 0.1%, I.I. T. An O-sintered body was prepared and vapor-deposited. The transmittance of the obtained thin film at a wavelength of 550 nm was 84%, and the volume resistivity was 9.7 × 10 −4 Ω · cm.
【００３６】比較例４ Ｓｃ2 Ｏ3 の成分が４０％を越える５０％である事以外
は、実施例５と同様にＩ．Ｔ．Ｏ焼結体を作製し、蒸着
を行った。得られた薄膜の波長５５０ｎｍでの透過率は
９４％、体積抵抗率は７．８×ｌ０-3Ω・ｍであった。Comparative Example 4 The same procedure as in Example 5 was repeated except that the content of Sc 2 O 3 was more than 40% and 50%. T. An O-sintered body was prepared and vapor-deposited. The transmittance of the obtained thin film at a wavelength of 550 nm was 94%, and the volume resistivity was 7.8 × 10 −3 Ω · m.
【００３７】[0037]
【発明の効果】以上説明した様に、本発明によれば、
Ｉ．Ｔ．Ｏ焼結体中のＳｎＯ2 のばらつき（Ｉ．Ｔ．Ｏ
薄膜中のＳｎＯ2 量の差）に影響されにくく、高透過率
を持ち再現よく安定した比抵抗を持つ透明導電Ｉ．Ｔ．
Ｏ薄膜が作製でき、ＬＣＤ等の大型化、高精細、高画質
化に大いに役立つものである。As described above, according to the present invention,
I. T. Variation of SnO 2 in O sintered compact (ITO
(A difference in the amount of SnO 2 in the thin film), a transparent conductive material having high transmittance, high reproducibility and stable specific resistance. T.
An O thin film can be produced, which is very useful for increasing the size, definition, and image quality of LCDs and the like.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G030 AA11 AA12 AA34 AA39 BA02 BA15 GA22 4K029 AA08 BA50 BC09 CA01 CA05 DA08 DB01 DB05 DB08 DB21 DC05 DC09 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G030 AA11 AA12 AA34 AA39 BA02 BA15 GA22 4K029 AA08 BA50 BC09 CA01 CA05 DA08 DB01 DB05 DB08 DB21 DC05 DC09
Claims (9)
3 ）、酸化錫（ＳｎＯ2 ）及び酸化スカンジウム（Ｓｃ
2 Ｏ3 ）を含有する事を特徴とするＩ．Ｔ．Ｏ焼結体。1. Indium oxide (In 2 O) as a main component
3 ), tin oxide (SnO 2 ) and scandium oxide (Sc
I.2 O 3 ). T. O sintered body.
酸化錫の割合が重量比で（Ｉｎ2 Ｏ3 ＋Ｓｃ2 Ｏ3 ）：
ＳｎＯ2 ＝９９〜９３：１〜７である請求項１記載の
Ｉ．Ｔ．Ｏ焼結体。2. The weight ratio of indium oxide, scandium oxide and tin oxide is (In 2 O 3 + Sc 2 O 3 ):
2. The method according to claim 1, wherein SnO 2 = 99 to 93: 1 to 7. T. O sintered body.
ウムとの重量比でＩｎ2 Ｏ3 ：Ｓｃ2 Ｏ3 ＝９９．８〜
６０：０．２〜４０である請求項１記載のＩ．Ｔ．Ｏ焼
結体。3. The content of scandium oxide in terms of weight ratio with respect to indium oxide is In 2 O 3 : Sc 2 O 3 = 99.8-
60: 0.2 to 40. T. O sintered body.
3 ）及び酸化錫（ＳｎＯ2 ）及び酸化スカンジウム（Ｓ
ｃ2 Ｏ3 ）の粉末を混合、成形し、加熱して焼結する事
を特徴とするＩ．Ｔ．Ｏ焼結体の製造方法。4. Indium oxide (In 2 O) as a main component
3 ) and tin oxide (SnO 2 ) and scandium oxide (S
mixing powders of c 2 O 3), molded, heated, characterized in that sintering I. T. A method for producing an O sintered body.
酸化錫の割合が重量比で（Ｉｎ2 Ｏ3 ＋Ｓｃ2 Ｏ3 ）：
ＳｎＯ2 ＝９９〜９３：１〜７である請求項４記載の
Ｉ．Ｔ．Ｏ焼結体の製造方法。5. The weight ratio of indium oxide, scandium oxide and tin oxide is (In 2 O 3 + Sc 2 O 3 ):
5. The method according to claim 4, wherein SnO 2 = 99 to 93: 1 to 7. T. A method for producing an O sintered body.
ウムとの重量比でＩｎ2 Ｏ3 ：Ｓｃ2 Ｏ3 ＝９９．８〜
６０：０．２〜４０である請求項４記載のＩ．Ｔ．Ｏ焼
結体の製造方法。6. The content of scandium oxide in terms of weight ratio with respect to indium oxide is In 2 O 3 : Sc 2 O 3 = 99.8-
60: 0.2 to 40. T. A method for producing an O sintered body.
Ｔ．Ｏ焼結体を蒸着してなることを特徴とするＩ．Ｔ．
Ｏ薄膜。7. The method according to claim 1, wherein the I.V.
T. I. An O. sintered body is deposited. T.
O thin film.
ム（Ｓｃ）が均一に分散し、同量含有する請求項７記載
のＩ．Ｔ．Ｏ薄膜。8. The method according to claim 7, wherein scandium (Sc) is uniformly dispersed between the surface of the thin film and the substrate and contained in the same amount. T. O thin film.
かわらず同じ体積抵抗率が得られる請求項７記載のＩ．
Ｔ．Ｏ薄膜。9. The method according to claim 7, wherein the same volume resistivity is obtained irrespective of the difference in tin (Sn) content in the thin film.
T. O thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31729898A JP3781398B2 (en) | 1998-11-09 | 1998-11-09 | I. T.A. O sintered body, production method thereof, and I.I. T.A. O thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31729898A JP3781398B2 (en) | 1998-11-09 | 1998-11-09 | I. T.A. O sintered body, production method thereof, and I.I. T.A. O thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000143334A true JP2000143334A (en) | 2000-05-23 |
| JP3781398B2 JP3781398B2 (en) | 2006-05-31 |
Family
ID=18086672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31729898A Expired - Lifetime JP3781398B2 (en) | 1998-11-09 | 1998-11-09 | I. T.A. O sintered body, production method thereof, and I.I. T.A. O thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3781398B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100538480C (en) * | 2002-03-01 | 2009-09-09 | 株式会社半导体能源研究所 | Liquid crystal disply device and its preparation method |
| US8664136B2 (en) | 2008-12-15 | 2014-03-04 | Idemitsu Kosan Co., Ltd. | Indium oxide sintered compact and sputtering target |
-
1998
- 1998-11-09 JP JP31729898A patent/JP3781398B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100538480C (en) * | 2002-03-01 | 2009-09-09 | 株式会社半导体能源研究所 | Liquid crystal disply device and its preparation method |
| US8664136B2 (en) | 2008-12-15 | 2014-03-04 | Idemitsu Kosan Co., Ltd. | Indium oxide sintered compact and sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3781398B2 (en) | 2006-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3746094B2 (en) | Target and manufacturing method thereof | |
| JPH06158308A (en) | Target for sputtering for indium-tin oxide film and its production | |
| US20090121199A1 (en) | In sm oxide sputtering target | |
| JP5082928B2 (en) | ZnO vapor deposition material, method for producing the same, and ZnO film formed thereby | |
| CN102906050A (en) | Sintered zinc oxide tablet and process for producing same | |
| JP3780932B2 (en) | Sintered target for producing transparent conductive thin film and method for producing the same | |
| JPH0570943A (en) | High density sintered target material for forming electric conductive transparent thin film by sputtering | |
| JP2002275623A (en) | Sintered compact target for depositing transparent electrically conductive thin film, production method therefor and transparent electrically conductive thin film obtained therefrom | |
| KR20020079422A (en) | ITO sputtering target and the method for manufacturing thereof | |
| JP2000143334A (en) | Sintered i.t.o, its production and i.t.o thin film | |
| JP3501614B2 (en) | ITO sintered body, method of manufacturing the same, and method of forming ITO film using the ITO sintered body | |
| JP5018553B2 (en) | ZnO vapor deposition material, method for producing the same, and ZnO film formed thereby | |
| JPH07243036A (en) | Ito sputtering target | |
| JPH0570942A (en) | High density sintered target material for forming electric conductive transparent thin film by sputtering | |
| JP2904358B2 (en) | Manufacturing method of ITO sintered body | |
| JP2002275624A (en) | Sintered compact target for depositing transparent electrically conductive thin film, production method therefor and transparent electrically conductive thin film obtained therefrom | |
| JP2012197216A (en) | Oxide sintered compact, method for manufacturing the same and target using the same | |
| JP3355610B2 (en) | Method for increasing resistance of tin-doped indium oxide film | |
| JP5018552B2 (en) | ZnO vapor deposition material, method for producing the same, and ZnO film formed thereby | |
| JPH06247765A (en) | Ito sintered compact, ito target and ito film | |
| JP3591610B2 (en) | ITO sintered body for forming transparent conductive film | |
| JP3184977B2 (en) | Method for producing ITO sputtering target material | |
| JPH04293769A (en) | Ito sputtering target for forming film at low temperature | |
| JPH08277112A (en) | Transparent conductive oxide material | |
| JP2003002749A (en) | Indium oxide powder and method for manufacturing ito sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050930 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051012 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051027 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060301 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060306 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090317 Year of fee payment: 3 |
|
| S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090317 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100317 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100317 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110317 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120317 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130317 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140317 Year of fee payment: 8 |
|
| EXPY | Cancellation because of completion of term |