JP2000133829A5 - - Google Patents
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- Publication number
- JP2000133829A5 JP2000133829A5 JP1998305206A JP30520698A JP2000133829A5 JP 2000133829 A5 JP2000133829 A5 JP 2000133829A5 JP 1998305206 A JP1998305206 A JP 1998305206A JP 30520698 A JP30520698 A JP 30520698A JP 2000133829 A5 JP2000133829 A5 JP 2000133829A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor layer
- semiconductor device
- metal oxide
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10305206A JP2000133829A (ja) | 1998-10-27 | 1998-10-27 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10305206A JP2000133829A (ja) | 1998-10-27 | 1998-10-27 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000133829A JP2000133829A (ja) | 2000-05-12 |
| JP2000133829A5 true JP2000133829A5 (zh) | 2007-04-12 |
Family
ID=17942337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10305206A Abandoned JP2000133829A (ja) | 1998-10-27 | 1998-10-27 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000133829A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101995082B1 (ko) | 2010-12-03 | 2019-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| JP2013161910A (ja) * | 2012-02-03 | 2013-08-19 | Osaka Prefecture Univ | 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ |
| KR20150007401A (ko) * | 2013-07-10 | 2015-01-21 | 안상정 | 광기전력 소자 |
| KR20200101886A (ko) * | 2020-08-18 | 2020-08-28 | 웨이브로드 주식회사 | 광기전력 소자 |
-
1998
- 1998-10-27 JP JP10305206A patent/JP2000133829A/ja not_active Abandoned
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