JP2000133762A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability, reduce a cost, and simplify a manufacturing process for a semiconductor device. SOLUTION: This device comprises a plurality of inner leads 4 which are electrically connected to a pad 1a of a semiconductor chip 1, white provided around the semiconductor chip 1, a metal plate 3 which is jointed to an end part 4a of the inner lead 4, while supporting the semiconductor chip 1 to allow heat radiation of it, an insulating bonding agent 7 coated on a chip-supporting surface 3a of the metal plate 3, a plurality of outer leads 5 which are connected to the inner lead 4, while being connected in electrical manner, and a mold part 2 formed by resin sealing the semiconductor chip 1. Here, the semiconductor chip 1 and the end part 4a of the inner lead 4 are jointed on the chip-supporting surface 3a of the metal plate 3 via insulating bonding agent 7 coated on it, with fixing of the semiconductor chip 1 and the inner lead 4 than by the insulating bonding agent 7 of a joint material of a single layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a technique effective when applied to improvement in reliability and simplification of a manufacturing process of a low thermal resistance type semiconductor device.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

With the increase in power consumption of semiconductor chips (semiconductor elements), adoption of a copper lead frame, installation of a heat spreader (heat spreader) in a package body, and the like, thereby taking measures to reduce thermal resistance. Is planned.

In a semiconductor device with low thermal resistance, in order to prevent deformation of the inner leads and contact between adjacent inner leads, the inner leads are previously bonded (bonded) to a metal plate coated with an insulating adhesive made of resin. Further, a die-bonding material for fixing the chip, which is different from the insulating adhesive, is applied to the chip mounting portion of the metal plate, and this is cured to mount the semiconductor chip, that is, die bonding (also referred to as bonding). )It is carried out.

The low thermal resistance type semiconductor device is described in, for example, Nikkei BP, issued May 31, 1993.
Susumu Kayama and Kunihiko Naruse (supervisors), "Practical Course VLSI Packaging Technology (2)", pp. 200-205.

[0006]

However, in the low thermal resistance type semiconductor device of the above-mentioned technique, in the manufacturing process, first, the inner lead of the lead frame is previously attached to an insulating adhesive applied to a metal plate. Further, a step of applying / curing a die bonding material for fixing the chip is added.

As a result, there is a problem that the manufacturing process becomes complicated.

In addition, since two types of joining materials are used for fixing the inner lead and for fixing the chip, there is a problem that the reliability of the two joining materials is reduced due to the mutual influence of the materials.

On the other hand, in consideration of the above-mentioned reduction in reliability, there arises a problem that the selection range of both materials is limited.

An object of the present invention is to provide a semiconductor device and a method for manufacturing the same, which improve reliability, reduce costs and simplify the manufacturing process.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a semiconductor device according to the present invention comprises: a plurality of inner leads electrically connected to a surface electrode of a semiconductor chip and arranged so as to extend around the semiconductor chip; A metal plate that joins and supports the semiconductor chip and radiates heat generated by the semiconductor chip; an insulating bonding material disposed on a chip supporting surface of the metal plate; and an electrical connection with the inner lead. A plurality of outer leads provided, wherein the semiconductor chip and the inner leads are joined to the chip supporting surface of the metal plate by the insulating joining material.

Thus, it is possible to unify the bonding material for fixing the inner lead and for fixing the chip.

Therefore, since only one type of insulating bonding material is used as the bonding material, it is possible to prevent a decrease in reliability due to the mutual influence of materials when two types of bonding materials are used.

As a result, the reliability of the semiconductor device can be improved.

Further, according to the method of manufacturing a semiconductor device of the present invention, there is provided a step of preparing a metal plate on which an insulating bonding material is previously arranged on a chip supporting surface; Bonding the semiconductor chip and the metal plate with the insulating bonding material to support the semiconductor chip with the metal plate; and a surface electrode of the semiconductor chip and Electrically connecting the inner lead of the lead frame corresponding to the above, sealing the semiconductor chip, and separating the outer lead of the lead frame and the frame portion of the lead frame supporting the outer lead. And a process.

[0018]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of the structure of the semiconductor device according to the present invention, FIG. 2 is a plan view showing the structure of the semiconductor device shown in FIG.
(A), (b), (c), (d) is sectional drawing which shows an example of the manufacturing procedure of the semiconductor device shown in FIG.

The semiconductor device of the present embodiment has a semiconductor chip 1 having a semiconductor integrated circuit formed on a circuit forming surface 1b as a main surface, and a resin in which the semiconductor chip 1 is sealed with a resin. It is a sealed type.

Further, the semiconductor chip 1 is of a high power consumption type, and therefore has a low thermal resistance type multi-pin structure.

In this embodiment, a QFP (Quad Flat Package) shown in FIGS. 1 and 2 will be described as an example of the low thermal resistance type multi-pin semiconductor device.

The structure of the QFP includes a plurality of inner leads 4 which are electrically connected to the pads 1a which are surface electrodes of the semiconductor chip 1 and are arranged so as to extend around the semiconductor chip 1. A metal plate 3 which is joined to the end 4a of the metal plate 3 and supports the semiconductor chip 1 to radiate heat generated by the semiconductor chip 1; and an insulating adhesive 7 applied (disposed) on the chip supporting surface 3a of the metal plate 3. (Insulating bonding material), a plurality of outer leads 5 connected to the inner leads 4 and electrically connected to the inner leads 4, and a mold portion 2 formed by resin sealing the semiconductor chip 1. The semiconductor chip 1 and the end 4a of the inner lead 4 are joined to the chip supporting surface 3a of the metal plate 3 by an insulating adhesive 7.

That is, the QFP according to the present embodiment is configured such that the end portions of the semiconductor chip 1 and the inner leads 4 are provided on the chip supporting surface 3a of the metal plate 3 via the insulating adhesive 7 applied to the chip supporting surface 3a. 4a are joined to each other,
The fixing of the semiconductor chip 1 and the fixing of the inner leads 4 are also performed by the insulating adhesive 7 as a one-layer bonding material.

Therefore, the semiconductor chip 1 is supported by the metal plate 3 via the insulating adhesive 7, and a plurality of inner leads 4 are attached to the metal plate 3 via the same insulating adhesive 7. They are joined at the portion 4a.

In this QFP, since each end 4a of the plurality of inner leads 4 is fixed on the metal plate 3 by the insulating adhesive 7, the inner leads 4 are deformed after fixing, or The inner lead 4 is configured to prevent the adjacent inner leads 4 from contacting each other.

Here, in the present embodiment, the case where the insulating adhesive 7 having both thermosetting properties and thermoplastic properties is used as the insulating adhesive 7 as the insulating bonding material will be described. I do.

For example, as an example of an insulating adhesive material forming the insulating adhesive 7, a mixture of a thermoplastic polyimide resin and a thermosetting epoxy resin in a semi-cured (B stage) state is used. .

As a result, the insulating adhesive 7 can have both thermosetting and thermoplastic properties.

That is, heating is performed once, thereby fixing the metal plate 3 and the inner lead 4 using thermosetting properties.
Further, the semiconductor chip 1 is heated again in a subsequent step, so that the semiconductor chip 1 can be fixed to the metal plate 3 using thermoplasticity.

Alternatively, it is also possible to fix the semiconductor chip 1 and then fix the inner leads 4.

Further, the insulating adhesive 7 of the present embodiment
Is an organic material containing an insulating filler.

The filler is a particle having a diameter of about several μm to several hundred μm, for example, silica particles.

Therefore, since the insulating adhesive 7 contains a filler such as silica, the filler serves as a spacer, and as a result, it is possible to prevent an electrical short between the inner lead 4 and the metal plate 3. Can be.

That is, the insulating property of the insulating adhesive 7 can be further enhanced.

The insulating adhesive 7 does not necessarily need to contain a filler or the like, and an inorganic material may be used as the insulating adhesive 7.

The metal plate 3 in the QFP according to the present embodiment is a heat spreader that enhances the heat dissipation effect of the semiconductor chip 1 and supports the semiconductor chip 1 and, as shown in FIG. It has a chip support surface 3a large enough to be able to join the end 4a of the inner lead 4, and is formed of a copper plate or the like.

This is to enhance the heat radiation effect of the metal plate 3 to promote heat radiation in the semiconductor chip 1.

However, the metal plate 3 is not limited to a copper plate, and may be a plate material other than a copper plate as long as it is formed of a material having high heat dissipation.

The lead frame 8 having the inner leads 4 and the outer leads 5 (see FIG. 3A) is preferably made of copper, like the metal plate 3.

That is, since the end 4 a of the inner lead 4 is joined to the metal plate 3, heat from the semiconductor chip 1 can be released to the outside through the metal plate 3 and through the inner lead 4 and the outer lead 5. For this reason, it is preferable to be formed of copper, which is a material having high heat dissipation.

However, as long as the semiconductor device does not require heat radiation, the lead frame 8 including the inner lead 4 and the outer lead 5 may be formed of an alloy of iron and nickel.

The pads 1a of the semiconductor chip 1 are electrically connected to the corresponding inner leads 4 by bonding wires 6.

That is, the pads 1a of the semiconductor chip 1 and the corresponding inner leads 4 are electrically connected by wire bonding.

The bonding wire 6 used in the wire bonding is, for example, a gold wire.

The molded part 2 is formed by resin-sealing the semiconductor chip 1, the inner leads 4, and the bonding wires 6 using a sealing resin. For example, a thermosetting epoxy resin or the like is used.

It should be noted that the semiconductor device of the present embodiment has a QF
P, the outer lead 5 is, as shown in FIG.
Projecting from the mold part 2 toward the four directions, and
As shown in FIG. 1, each outer lead 5 is bent and formed in a gull wing shape.

Next, the semiconductor device (QF
The manufacturing method of P) will be described.

First, an insulating adhesive 7 (insulating bonding material) is applied (arranged) on the chip supporting surface 3a of the metal plate 3 capable of supporting the semiconductor chip 1, and the inner leads 4 are formed by the insulating adhesive 7. A lead frame 8 shown in FIG. 3 (a) in which the end 4a of FIG.

That is, a lead frame 8 in which the metal plate 3 is supported by the ends 4a of the inner leads 4 via the insulating adhesive 7 is prepared.

The lead frame 8 at this time is a multiple lead frame capable of manufacturing a plurality of QFPs from one lead frame 8, and therefore, a plurality of QFP regions are provided in one lead frame 8. Is formed.

The insulating adhesive 7 applied to the metal plate 3 is a mixture of a thermoplastic polyimide resin and a thermosetting epoxy resin in a semi-cured (B stage) state, and a filler such as silica. Is contained.

After that, as shown in FIG. 3B, the semiconductor chip 1 and the metal plate 3 are bonded (joined) with an insulating adhesive 7 and the semiconductor chip 1 is supported by the metal plate 3.

That is, die bonding (also referred to as pellet bonding) for mounting the semiconductor chip 1 on the chip supporting surface 3a of the metal plate 3 with the insulating adhesive 7 is performed.

At this time, the semiconductor chip 1 is fixed (bonded) to the metal plate 3 by thermocompression. However, the load applied to the semiconductor chip 1 during thermocompression bonding is as small as about several hundred grams.

In the QFP of the present embodiment, the bonding between the inner lead 4 and the metal plate 3 by the insulating adhesive 7 and the bonding between the semiconductor chip 1 and the metal plate 3 by the insulating adhesive 7 are separately performed. And assembling it.

Therefore, first, the lead frame 8 shown in FIG. 3A is one in which the inner lead 4 and the metal plate 3 are joined in advance, and when the inner lead 4 and the metal plate 3 are joined, In addition, the insulating adhesive 7 is once heated.

That is, when the inner lead 4 and the metal plate 3 are joined together, they are heated once, so that the insulating adhesive 7
Plate 3 and inner lead 4 utilizing the thermosetting property of
And fix.

Thereafter, in the die bonding step, the insulating adhesive 7 is heated again, whereby the semiconductor chip 1 is fixed to the metal plate 3 by utilizing the thermoplasticity of the insulating adhesive 7.

That is, the insulating adhesive 7 of the present embodiment
Is capable of exhibiting adhesiveness to two times of heating, so that even after the step of fixing the metal plate 3 to the inner leads 4 of the lead frame 8,
The semiconductor chip 1 can be fixed to the metal plate 3 by heating the insulating adhesive 7.

Thereafter, as shown in FIG. 3C, the pads 1a (surface electrodes) of the semiconductor chip 1 and the corresponding inner leads 4 of the lead frame 8 are electrically connected.

That is, by performing wire bonding,
The pads 1a of the semiconductor chip 1 and the inner leads 4 are connected by bonding wires 6.

Thereafter, as shown in FIG. 3D, the semiconductor chip 1 is formed using an epoxy-based thermosetting sealing resin.
Then, the bonding wire 6 is resin-sealed with a mold, thereby forming the mold portion 2.

After completion of the molding, in a cutting / forming step, the plurality of outer leads 5 protruding from the mold section 2 and the frame of the lead frame 8 supporting the outer leads 5 are separated, and the outer leads 5 are bent and formed into a desired shape. .

That is, a predetermined portion of the lead frame 8 is cut using a cutting die, thereby separating the outer lead 5 from the frame portion of the lead frame 8 and forming the separated outer lead 5 into a desired shape (this embodiment). In the form (1), it is bent into a gull wing shape as shown in FIG.

Thus, the QFP shown in FIG. 1 can be assembled.

According to the semiconductor device (QFP) and the method of manufacturing the same according to the present embodiment, the following operational effects can be obtained.

That is, the insulating adhesive 7 which is an insulating bonding material is arranged (applied) on the metal plate 3 and the insulating adhesive 7
By performing both the fixing of the inner lead 4 and the fixing of the semiconductor chip 1, the bonding material can be unified for fixing the inner lead and for fixing the chip.

Accordingly, since only one kind of the insulating adhesive 7 is used as the bonding material, it is possible to prevent a decrease in reliability due to mutual influence of materials when two types of bonding materials are used.

Thus, the reliability of the QFP (semiconductor device) can be improved.

Further, since the insulating adhesive 7 is unified for the inner lead fixing and the chip fixing, the range of material selection of the insulating adhesive 7 can be expanded.

Further, since the insulating adhesive 7 is unified for fixing the inner lead and for fixing the chip, the number of times of disposing (applying) the insulating adhesive 7 to the metal plate 3 can be reduced to one. As a result, the manufacturing process of the QFP, that is, the assembly process can be simplified.

Further, since the insulating adhesive 7 is unified for fixing the inner lead and for fixing the chip, the number of types of bonding materials is reduced, and therefore, the cost of the QFP can be reduced.

By using an insulating adhesive 7 having both thermosetting and thermoplastic properties as an insulating bonding material, the bonding (fixing) of the inner leads 4 and the bonding (fixing) of the semiconductor chip 1 can be improved. Can be carried out in separate steps, ie, twice.

Thus, when the joining step of the inner leads 4 and the joining step of the semiconductor chip 1 must be performed separately (for example, when a semiconductor manufacturing apparatus that cannot perform an integrated process is used, or when the respective steps are separated). For example, in a place where it is performed).

When the semiconductor chip 1 is mounted via the insulating adhesive 7, the mounting area of the semiconductor chip 1 on the metal plate 3 is not limited. The semiconductor chip 1) is replaced with a metal plate 3
It can be mounted on

Furthermore, since the reliability of the QFP can be improved, the lead frame 8 having the metal plate 3 can be used as a standardized lead frame, and as a result, a low thermal resistance type QFP can be used. Without limiting to a (semiconductor device), it is possible to standardize a QFP using this standardized lead frame.

Further, since the insulating adhesive 7 contains an insulating filler such as silica, the filler has a role of a spacer, whereby the insulating property of the insulating adhesive 7 can be further improved. .

As a result, the reliability of the QFP can be further improved.

Further, since the metal plate 3 is a copper plate,
Since copper has high heat dissipation, the heat dissipation effect of the semiconductor chip 1 can be further improved.

As a result, the reliability of the QFP can be further improved.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above-described embodiment, in the method of manufacturing a QFP (semiconductor device), a lead frame 8 in which the end 4a of the inner lead 4 and the metal plate 3 are joined in advance by the insulating adhesive 7 is prepared. , This lead frame 8
The manufacturing procedure in the case of manufacturing a QFP using the above is described, but the lead frame 8 to which the metal plate 3 is not joined,
The QFP may be manufactured by preparing the metal plate 3 having the insulating adhesive 7 applied to the chip supporting surface 3a.

That is, as shown in the manufacturing procedure of the semiconductor device according to the other embodiment of FIG. 4, first, the metal plate 3 on which the insulating adhesive 7 is applied (arranged) in advance on the chip supporting surface 3a;
A lead frame 8 to which the metal plate 3 is not bonded is prepared (see FIG. 4A), and then, as shown in FIG. 4B, the end 4a of the inner lead 4 and the metal plate 3 are bonded by thermocompression.
Is bonded (adhered) to the chip supporting surface 3a by thermocompression bonding.

Further, as shown in FIG. 4C, the semiconductor chip 1 and the metal plate 3 are joined (adhered) to each other by the insulating adhesive 7 in the same manner as in the above embodiment. A QFP similar to the QFP of the embodiment can be manufactured.

As shown in the manufacturing procedure of the semiconductor device according to another embodiment of FIG. 5, the order of fixing the inner leads and fixing the chips may be interchanged.

That is, as shown in FIG. 5A, the metal plate 3 on which the insulating adhesive 7 is applied (arranged) in advance on the chip supporting surface 3a, and the lead frame 8 to which the metal plate 3 is not bonded are formed. And then, as shown in FIG.
The semiconductor chip 1 and the metal plate 3 are joined (adhered) via the insulating adhesive 7 by thermocompression bonding. Further, as shown in FIG. 5C, the end 4a of the inner lead 4 and the metal plate 3 are joined together. The chip support surface 3a is joined (bonded) by thermocompression bonding.

Also, by using one kind of thermosetting or thermoplastic insulating adhesive 7 as the insulating bonding material, the fixing of the inner lead 4 and the fixing of the semiconductor chip 1 can be performed simultaneously. Become.

That is, as shown in the manufacturing method of the semiconductor device according to another embodiment of FIG. 6, a metal plate 3 having an insulating adhesive 7 previously applied (arranged) on a chip supporting surface 3a; 6A is prepared (see FIG. 6A). Then, as shown in FIG. 6B, the semiconductor chip 1 and the metal plate via the insulating adhesive 7 by thermocompression bonding are prepared. 3 and bonding (adhesion) between the end 4a of the inner lead 4 and the chip supporting surface 3a of the metal plate 3.
And at the same time.

At this time, in actuality, it is conceivable that a slight difference in timing may occur at the time of joining the two, but this case is also regarded as simultaneous.

Therefore, by using one kind of thermosetting or thermoplastic insulating adhesive 7, the bonding of the inner leads 4 and the bonding of the semiconductor chip 1 can be performed at the same time. The process can be further simplified.

The above embodiment and FIGS. 4 to 6
In the other embodiments shown in the above, the case where the insulating adhesive 7 is applied in advance to the chip supporting surface 3a of the metal plate 3 has been described, but in each embodiment, the insulating adhesive 7 is The metal plate 3 to which the metal plate 3 is not applied (disposed), the lead frame 8 to which the metal plate 3 is not fixed, and the insulating adhesive 7 are individually prepared, and the chip supporting surface 3 of the metal plate 3 is prepared.
The production of the QFP may be started from the point where the insulating adhesive 7 is applied to a.

In the above embodiment, as an example of the insulating adhesive material forming the insulating adhesive 7, a thermoplastic polyimide resin and a thermosetting epoxy resin in a semi-cured (B stage) state are used. Although the case of a mixture with the above has been described, the adhesive material is not limited to a polyimide resin or an epoxy resin, and may be another adhesive material.

When the inner lead 4 or the semiconductor chip 1 is joined (adhered) with the insulating adhesive 7,
It is not limited to thermocompression bonding, and only heating or only pressing may be selected depending on the insulating adhesive 7 to be used.

Further, in the above embodiment, the metal plate 3 is fixed to the inner lead 4 of the lead frame 8, and then the metal plate 3 is fixed when the semiconductor chip 1 is fixed to the metal plate 3.
(Adhesion) between the inner lead 4 and the metal plate 3 in the subsequent assembling process, so long as the inner lead 4 and the metal plate 3 are not separated.

In the above embodiment and the other embodiments, the case where the semiconductor device is of a low thermal resistance type has been described. However, the semiconductor device uses the standard lead frame described in the above embodiment. If
It is not limited to the low heat resistance type, but may be other than the low heat resistance type.

Further, in the above-described embodiments and the other embodiments, the case where the semiconductor device is a QFP has been described. However, the semiconductor device is not limited to the QFP, and may be, for example, an SOP (Small Outline). Packag
e), etc., or something else.

[0098]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). Placing an insulating bonding material on a metal plate,
By performing both the fixing of the inner lead and the fixing of the semiconductor chip with this insulating bonding material, it is possible to unify the bonding material for fixing the inner lead and for fixing the chip. Therefore, since only one type of insulating bonding material is used as the bonding material, it is possible to prevent a decrease in reliability due to the influence of materials when two types of bonding materials are used. Thereby, the reliability of the semiconductor device can be improved.

(2). Since the insulating bonding material is unified for the inner lead fixing and the chip fixing, the range of material selection of the insulating bonding material can be expanded.

(3). In order to unify the insulating bonding material for the inner lead fixing and the chip fixing, the number of times of disposing (applying) the insulating bonding material to the metal plate can be reduced to one, and the semiconductor device manufacturing process, ie, assembly The process can be simplified.

(4). Since the insulating bonding material is unified for the inner lead fixing and the chip fixing, the types of bonding materials are reduced, and as a result, the cost of the semiconductor device can be reduced.

(5). When mounting a semiconductor chip via an insulating bonding material, the mounting area of the semiconductor chip on the metal plate is not limited, so that semiconductor chips of various sizes (general-purpose semiconductor chips) must be mounted on the metal plate. Becomes possible. Therefore, it is possible to apply the lead frame having the metal plate as a standardized lead frame. As a result, standardization of a semiconductor device using this standardized lead frame is not limited to a low thermal resistance type semiconductor device. It becomes possible to plan.

(6). Since the insulating bonding material contains an insulating filler, the filler serves as a spacer, thereby further improving the insulating property of the insulating bonding material. As a result, the reliability of the semiconductor device can be further improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of an embodiment of a structure of a semiconductor device according to the present invention.

FIG. 2 is a plan view showing a structure of the semiconductor device shown in FIG. 1 through a mold part.

FIGS. 3A, 3B, 3C, and 3D are cross-sectional views illustrating an example of a manufacturing procedure of the semiconductor device illustrated in FIGS.

FIGS. 4A, 4B, and 4C are cross-sectional views illustrating a procedure for manufacturing a semiconductor device according to another embodiment of the present invention.

FIGS. 5A, 5B, and 5C are cross-sectional views illustrating a procedure for manufacturing a semiconductor device according to another embodiment of the present invention.

FIGS. 6A and 6B are cross-sectional views illustrating a procedure for manufacturing a semiconductor device according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Pad (surface electrode) 1b Circuit formation surface 2 Mold part 3 Metal plate 3a Chip support surface 4 Inner lead 4a End part 5 Outer lead 6 Bonding wire 7 Insulating adhesive (insulating joining material) 8 Lead frame

Continuing on the front page (72) Inventor Kazunari Suzuki 5-2-2-1, Josuihoncho, Kodaira-shi, Tokyo Inside Hitachi Super-LSI Systems Co., Ltd. (72) Inventor Hiroaki Tanaka Kodaira-shi, Tokyo 5-22-1, Kamimizu Honcho F-term (reference) 5F067 AA03 AA11 AA18 AB03 BE10 CA03 CC02 CC09 DA05

Claims (8)

[Claims] A plurality of inner leads electrically connected to a surface electrode of the semiconductor chip and arranged so as to extend around the semiconductor chip, and joined to an end of the inner lead to form the semiconductor chip; A metal plate that supports and radiates heat generated by the semiconductor chip; an insulating bonding material disposed on a chip supporting surface of the metal plate; and a plurality of outer leads that are electrically connected to the inner leads. Wherein the semiconductor chip and the inner lead are joined to the chip supporting surface of the metal plate by the insulating joining material. 2. The semiconductor device according to claim 1, wherein said insulating bonding material is an insulating adhesive having both thermosetting properties and thermoplastic properties. 3. The semiconductor device according to claim 1, wherein the insulating bonding material contains an insulating filler. 4. The semiconductor device according to claim 1, wherein said metal plate is a copper plate. 5. A step of preparing a metal plate on which an insulating bonding material is disposed in advance on a chip supporting surface; and a step of bonding an end of an inner lead of a lead frame to the metal plate with the insulating bonding material. Bonding the semiconductor chip and the metal plate with the insulating bonding material and supporting the semiconductor chip with the metal plate; surface electrodes of the semiconductor chip and the corresponding inner leads of the lead frame A step of electrically connecting the semiconductor chip, a step of sealing the semiconductor chip, and a step of separating an outer lead of the lead frame and a frame portion of the lead frame supporting the outer lead. Device manufacturing method. 6. A step of preparing a lead frame in which an end of an inner lead and the metal plate are bonded in advance by an insulating bonding material disposed on a chip supporting surface of a metal plate capable of supporting a semiconductor chip; Bonding the semiconductor chip and the metal plate with an insulating bonding material to support the semiconductor chip with the metal plate; and forming a surface electrode of the semiconductor chip and the corresponding inner lead of the lead frame. Electrically connecting, sealing the semiconductor chip, and separating the outer lead of the lead frame and the frame portion of the lead frame supporting the outer lead. Production method. 7. The method of manufacturing a semiconductor device according to claim 5, wherein a thermosetting or thermoplastic insulating adhesive is used as the insulating bonding material, and the inner lead is formed by the insulating adhesive. And bonding the semiconductor chip and the metal plate by the insulating adhesive at the same time. 8. The method for manufacturing a semiconductor device according to claim 5, wherein an insulating adhesive having both thermosetting properties and thermoplastic properties is used as the insulating bonding material.
Manufacturing the semiconductor device, wherein the joining of the inner lead and the metal plate by the insulating adhesive and the joining of the semiconductor chip and the metal plate by the insulating adhesive are performed in separate steps. Method.