JP2000106404A - Manufacture of electronic device - Google Patents

Manufacture of electronic device

Info

Publication number
JP2000106404A
JP2000106404A JP27403798A JP27403798A JP2000106404A JP 2000106404 A JP2000106404 A JP 2000106404A JP 27403798 A JP27403798 A JP 27403798A JP 27403798 A JP27403798 A JP 27403798A JP 2000106404 A JP2000106404 A JP 2000106404A
Authority
JP
Japan
Prior art keywords
metal layer
metal
metallized
electronic component
insulating base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27403798A
Other languages
Japanese (ja)
Other versions
JP3232051B2 (en
Inventor
Maki Suzuki
真樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP27403798A priority Critical patent/JP3232051B2/en
Publication of JP2000106404A publication Critical patent/JP2000106404A/en
Application granted granted Critical
Publication of JP3232051B2 publication Critical patent/JP3232051B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device in which cracks are not generated on an insulating substrate when a metal cover is electron-beam welded to the metallized metal layer of the insulating substrate, having an electronic component with a container of excellent airtightness and the electronic component housed in the device can be operated normally and stably for a long period. SOLUTION: An electronic component 1, an insulating substrate 2, having the mounting part 2a of the electronic component 1 on the upper surface and a frame-like metallized metal layer 5 surrounding the mounting part 2b, and a metal cover 3, in which the electronic component 1 is housed, are prepared. Then, the electronic component 1 is mounted on the mounting part 2a, and the metal cover 3 is mounted on the metallized metal layer pinching a soldering material 6 between them. Then, after the insulating substrate 2 has been preliminary heated up by irradiating the electron beam 7a having the output with which the soldering material 6 is not fused, on the upper surface of the metal cover 3, the metal cover 3 is junctioned to the metallized metal layer 5 by the soldering material 6 by irradiating an electron beam 7b of the output with which the soldering material is fused. The thermal impulse to the insulating substrate 2 is alleviated, and the generation of cracks can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はセラミックス等の絶
縁基体と金属製蓋体とから成る容器の内部に圧電振動子
や半導体素子等の電子部品を気密に収容する電子装置の
製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electronic device in which electronic components such as a piezoelectric vibrator and a semiconductor element are hermetically accommodated in a container comprising an insulating base such as ceramics and a metal lid. is there.

【0002】[0002]

【従来の技術】圧電振動子や半導体素子等の電子部品
は、この電子部品を収容するための容器内に気密に収容
されることによって製品としての電子装置となる。
2. Description of the Related Art Electronic components such as a piezoelectric vibrator and a semiconductor element are air-tightly accommodated in a container for accommodating the electronic components to become an electronic device as a product.

【0003】かかる電子装置において最も信頼性が高い
とされるものは、酸化アルミニウム質焼結体等のセラミ
ックスから成り、上面中央部に電子部品が搭載される搭
載部を有する絶縁基体と、この絶縁基体の上面に搭載部
を取り囲むようにして取着された鉄−ニッケル合金や鉄
−ニッケル−コバルト合金から成る金属枠体と、この金
属枠体にシーム溶接により接合される鉄−ニッケル合金
や鉄−ニッケル−コバルト合金から成る金属製蓋体とか
ら成る容器の内部に電子部品を気密に封止したタイプの
ものである。このタイプの電子装置は、絶縁基体の搭載
部に電子部品を搭載した後、絶縁基体に取着された金属
枠体に金属製蓋体を載置して、この金属製蓋体の外周縁
にシーム溶接機の一対のローラー電極を接触させながら
転動させるとともにこのローラー電極間に溶接のための
大電流を流し、金属枠体に金属製蓋体をシーム溶接する
ことによって製作される。
[0003] Among such electronic devices, the most reliable one is an insulating base made of ceramics such as an aluminum oxide sintered body and having a mounting portion for mounting electronic components at the center of the upper surface, and an insulating substrate having the same. A metal frame made of an iron-nickel alloy or an iron-nickel-cobalt alloy attached to the upper surface of the base so as to surround the mounting portion; and an iron-nickel alloy or iron joined to the metal frame by seam welding. A type in which an electronic component is hermetically sealed inside a container made of a metal lid made of a nickel-cobalt alloy. In this type of electronic device, an electronic component is mounted on a mounting portion of an insulating base, and then a metal lid is mounted on a metal frame attached to the insulating base. It is manufactured by rolling while a pair of roller electrodes of a seam welding machine are in contact with each other, flowing a large current for welding between the roller electrodes, and seam-welding a metal lid to a metal frame.

【0004】なお、このタイプの電子装置において、絶
縁基体に取着された金属枠体は、絶縁基体の上面に搭載
部を取り囲むようにして枠状のメタライズ金属層を被着
させておくとともにこのメタライズ金属層にニッケルメ
ッキ層を被着させた後、これに銀ろう等のろう材を介し
てろう付けすることによって取着されている。
In this type of electronic device, the metal frame attached to the insulating base is provided with a frame-shaped metallized metal layer on the upper surface of the insulating base so as to surround the mounting portion. After a nickel plating layer is applied to the metallized metal layer, it is attached by brazing to this with a brazing material such as silver brazing.

【0005】しかしながら、このタイプの電子装置は、
絶縁基体に取着された金属枠体に金属製蓋体をシーム溶
接する際のシーム溶接装置のローラー電極の移動速度が
精々3mm/秒程度と遅いため、例えば3mm角の金属
製蓋体を金属枠体にシーム溶接するのに数秒程度の長時
間を要し、生産性が低いという欠点があった。
However, this type of electronic device is
When the metal lid is seam-welded to the metal frame attached to the insulating base, the moving speed of the roller electrode of the seam welding apparatus is as slow as at most 3 mm / sec. Seam welding to the frame takes a long time of about several seconds, and has the disadvantage of low productivity.

【0006】さらに、絶縁基体に金属製蓋体をシーム溶
接するための下地金属として金属枠体が必要であるた
め、金属枠体の分だけ電子装置の高さが高いものとなっ
てしまうとともに高価なものとなってしまうという欠点
も有していた。
Furthermore, since a metal frame is required as a base metal for seam welding a metal lid to an insulating base, the height of the electronic device is increased by the metal frame, and the cost is high. There was also a disadvantage that it would be difficult.

【0007】そこで、上面中央部に電子部品を搭載する
搭載部を、および上面外周部に搭載部を取り囲む枠状で
厚みが10〜20μm程度のメタライズ金属層を有する酸化
アルミニウム質焼結体等のセラミックスから成る絶縁基
体と、鉄−ニッケル合金や鉄−ニッケル−コバルト合金
から成る金属製蓋体とから成る容器を準備して、絶縁基
体の搭載部に電子部品を搭載した後、絶縁基体のメタラ
イズ金属層に金属製蓋体をろう材を介してエレクトロン
ビーム溶接することにより絶縁基体と金属製蓋体とから
成る容器の内部に電子部品を気密に封止したタイプの電
子装置が提案されている。
In view of the above, there is provided a mounting portion for mounting an electronic component at the center of the upper surface and an aluminum oxide sintered body having a metallized metal layer having a thickness of about 10 to 20 μm surrounding the mounting portion at the outer peripheral portion of the upper surface. After preparing a container including an insulating base made of ceramics and a metal lid made of an iron-nickel alloy or an iron-nickel-cobalt alloy, mounting electronic components on a mounting portion of the insulating base, and then metalizing the insulating base. There has been proposed an electronic device in which an electronic component is hermetically sealed inside a container formed of an insulating base and a metal lid by electron beam welding a metal lid to a metal layer via a brazing material. .

【0008】このタイプの電子装置では、絶縁基体のメ
タライズ金属層にニッケルメッキを2〜5μmの厚みに
被着させておくとともに、このニッケルメッキが被着さ
れたメタライズ金属層上に金属製蓋体を間にろう材を挟
んで載置し、しかる後、エレクトロンビームを磁界によ
って枠状のメタライズ金属層に沿って移動させながら金
属製蓋体の上面に照射し、この照射したエレクトロンビ
ームによる熱エネルギーでエレクトロンビームが照射さ
れた部分に対応するろう材を溶融させることによって、
金属製蓋体と絶縁基体とが接合される。
In this type of electronic device, the metallized metal layer of the insulating base is coated with nickel plating to a thickness of 2 to 5 μm, and a metal cover is formed on the nickel-plated metallized metal layer. Is then placed with a brazing material in between, and then the electron beam is irradiated on the upper surface of the metal lid while moving along the frame-shaped metallized metal layer by a magnetic field. By melting the brazing material corresponding to the part irradiated with the electron beam in
The metal lid and the insulating base are joined.

【0009】このような電子装置によれば、エレクトロ
ンビームは磁界によつて移動させながら照射されること
から約300 mm/秒以上の高速で移動させることがで
き、例えば3mm角の金属製蓋体を0.1 秒以下の極めて
短時間のうちに絶縁基体のメタライズ金属層に溶接する
ことができるため、生産性に極めて優れる。
According to such an electronic device, since the electron beam is irradiated while being moved by the magnetic field, it can be moved at a high speed of about 300 mm / sec or more. Can be welded to the metallized metal layer of the insulating substrate in a very short time of 0.1 second or less, so that the productivity is extremely excellent.

【0010】さらに、溶接のための下地金属として金属
枠体を必要としないことから、その分、高さを低くする
ことができ、かつ安価である。
Furthermore, since a metal frame is not required as a base metal for welding, the height can be reduced accordingly and the cost is low.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、このタ
イプの金属製蓋体をエレクトロンビーム溶接により接合
した容器の内部に電子部品を気密に収容した電子装置で
は、金属製蓋体を絶縁基体のメタライズ金属層にエレク
トロンビーム溶接する際に絶縁基体のエレクトロンビー
ムが照射された部分に対応する部位にエレクトロンビー
ムによる熱が伝わり、この部位が極めて短時間のうちに
局部的に高温となる熱衝撃を受け、このため絶縁基体の
エレクトロンビームが照射された部分に対応する部位に
クラックが入ることがあった。そして、そのようにクラ
ックが入るとこれが外部環境の温度変化を長期間にわた
って繰り返し受けることにより絶縁基体の外部にまで進
行し、その結果、容器の気密性が破れて内部に収容する
電子部品を長期間にわたり正常かつ安定に作動させるこ
とができなくなってしまうという問題点を有していた。
However, in an electronic device in which electronic components are hermetically accommodated in a container in which this type of metal lid is joined by electron beam welding, the metal lid is formed of a metallized metal of an insulating base. When an electron beam is welded to a layer, heat generated by the electron beam is transmitted to a portion of the insulating substrate corresponding to the portion irradiated with the electron beam, and this portion receives a thermal shock that locally becomes high in a very short time, For this reason, a crack may be formed in a portion of the insulating substrate corresponding to the portion irradiated with the electron beam. When such cracks are formed, the cracks are repeatedly subjected to temperature changes in the external environment for a long period of time, and thus progress to the outside of the insulating base. There has been a problem that normal and stable operation cannot be performed over a period.

【0012】本発明は、かかる問題点に鑑み案出された
ものであり、その目的は、金属製蓋体を絶縁基体のメタ
ライズ金属層にエレクトロンビーム溶接する際に絶縁基
体にクラックが入ることがなく、電子部品を収容する容
器を気密性が極めて優れたものとして、内部に収容する
電子部品を長期間にわたり正常かつ安定に作動させるこ
とができる電子装置の製造方法を提供することにある。
The present invention has been devised in view of such a problem, and an object of the present invention is to prevent a crack from being formed in an insulating substrate when an electron beam welding is performed on a metal lid to a metallized metal layer of the insulating substrate. Another object of the present invention is to provide a method of manufacturing an electronic device that can operate a normal and stable electronic component housed therein for a long period of time by making a container for housing the electronic component extremely airtight.

【0013】[0013]

【課題を解決するための手段】本発明の電子装置の製造
方法は、電子部品と、上面に前記電子部品が搭載される
搭載部およびこの搭載部を取り囲むようにして被着され
た枠状のメタライズ金属層を有する絶縁基体と、この絶
縁基体の前記メタライズ金属層に接合され、前記絶縁基
体との間の空間に前記電子部品を収容する金属製蓋体と
を準備する工程と、前記絶縁基体の前記搭載部に前記電
子部品を搭載する工程と、前記絶縁基体の前記メタライ
ズ金属層上に前記金属製蓋体を間にろう材を挟んで載置
する工程と、前記金属製蓋体の上面に前記ろう材が溶融
しない出力のエレクトロンビームを前記枠状のメタライ
ズ金属層に沿って少なくとも1周照射することによって
前記絶縁基体を予備加熱する工程と、前記金属製蓋体の
上面に前記ろう材が溶融する出力のエレクトロンビーム
を前記枠状のメタライズ金属層に沿って少なくとも1周
照射することによって前記金属製蓋体を前記メタライズ
金属層に前記ろう材を介して接合する工程とを具備する
ことを特徴とするものである。
According to the present invention, there is provided a method of manufacturing an electronic device, comprising: an electronic component; a mounting portion on which the electronic component is mounted on a top surface; and a frame-like shape attached to surround the mounting portion. Preparing an insulating base having a metallized metal layer, and a metal lid joined to the metallized metal layer of the insulating base and accommodating the electronic component in a space between the insulating base and the insulating base; Mounting the electronic component on the mounting portion, mounting the metal lid on the metallized metal layer of the insulating base with a brazing material interposed therebetween, and an upper surface of the metal lid. Preheating the insulating base by irradiating at least one round of an electron beam along the frame-shaped metallized metal layer with an output electron beam that does not melt the brazing material, and forming the brazing material on the upper surface of the metal lid. Bonding the metal cover to the metallized metal layer via the brazing material by irradiating the molten metal beam at least one round along the frame-shaped metallized metal layer. It is a feature.

【0014】本発明の電子装置の製造方法によれば、金
属製蓋体の上面にろう材が溶融する出力のエレクトロン
ビームを照射して金属製蓋体をメタライズ金属層にろう
材を介して接合する前に、ろう材が溶融しない出力のエ
レクトロンビームを金属製蓋体の上面に照射して絶縁基
体を予備加熱しておくことから、金属製蓋体をメタライ
ズ金属層にろう材を介して接合する際に予備加熱により
絶縁基体が予めある程度温まっているので、これにより
絶縁基体に印加される熱衝撃を緩和することができ、絶
縁基体にクラックが発生することを有効に防止すること
ができる。
According to the method of manufacturing an electronic device of the present invention, the metal lid is joined to the metallized metal layer via the brazing material by irradiating the upper surface of the metal lid with an electron beam of an output that melts the brazing material. Before performing the heating, the upper surface of the metal lid is irradiated with an electron beam that does not melt the brazing material to preheat the insulating base, so that the metal lid is joined to the metallized metal layer via the brazing material. Since the insulating base is preliminarily warmed to some extent by the preliminary heating, the thermal shock applied to the insulating base can be reduced, thereby effectively preventing the occurrence of cracks in the insulating base.

【0015】[0015]

【発明の実施の形態】次に、本発明を添付の図面を基に
説明する。
Next, the present invention will be described with reference to the accompanying drawings.

【0016】図2は本発明の製造方法により製造される
電子装置の実施の形態の一例を示した断面図であり、同
図において1は電子部品、2は絶縁基体、3は金属製蓋
体である。そして、絶縁基体2と金属製蓋体3とから成
る容器の内部に例えば圧電振動子や半導体素子等の電子
部品1を気密に収容することによって電子装置が構成さ
れている。
FIG. 2 is a cross-sectional view showing an example of an embodiment of an electronic device manufactured by the manufacturing method of the present invention. In FIG. 2, 1 is an electronic component, 2 is an insulating base, and 3 is a metal lid. It is. An electronic device is configured by hermetically housing the electronic component 1 such as a piezoelectric vibrator or a semiconductor element in a container including the insulating base 2 and the metal lid 3.

【0017】電子部品1は、例えば圧電振動子や半導体
素子等であり、この例ではその下面に図示しない複数の
電極を有している。
The electronic component 1 is, for example, a piezoelectric vibrator or a semiconductor element. In this example, the electronic component 1 has a plurality of electrodes (not shown) on its lower surface.

【0018】絶縁基体2は、電子部品1を支持する支持
体であり、酸化アルミニウム質焼結体や窒化アルミニウ
ム質焼結体等のセラミックスから成り、その上面中央部
に電子部品1を収容するための凹部Aを有している。そ
して、凹部Aの底面は電子部品1を搭載するための搭載
部2aを形成しており、搭載部2aに電子部品1が搭載
されている。
The insulating substrate 2 is a support for supporting the electronic component 1 and is made of a ceramic such as an aluminum oxide sintered body or an aluminum nitride sintered body. Of the recess A. The bottom surface of the concave portion A forms a mounting portion 2a for mounting the electronic component 1, and the electronic component 1 is mounted on the mounting portion 2a.

【0019】また、絶縁基体2には、搭載部2aの上面
から絶縁基体2の下面にかけて導出するタングステンや
モリブデン等の金属粉末焼結体から成るメタライズ配線
層4が被着形成されている。
A metallized wiring layer 4 made of a sintered metal powder of tungsten, molybdenum, or the like, which extends from the upper surface of the mounting portion 2a to the lower surface of the insulating substrate 2, is formed on the insulating substrate 2.

【0020】メタライズ配線層4は、電子部品1の各電
極を外部に電気的に導出するための導電路として機能
し、その搭載部2aの上面の部位には電子部品1の電極
が例えば導電性接着剤を介して電気的に接続されてい
る。そして、メタライズ配線層4の絶縁基体2の下面に
導出した部位は外部電気回路基板(図示せず)の配線導
体に例えば半田を介して電気的に接続される。
The metallized wiring layer 4 functions as a conductive path for electrically leading each electrode of the electronic component 1 to the outside, and the electrode of the electronic component 1 is formed on the upper surface of the mounting portion 2a. They are electrically connected via an adhesive. The portion of the metallized wiring layer 4 extending to the lower surface of the insulating base 2 is electrically connected to a wiring conductor of an external electric circuit board (not shown) via, for example, solder.

【0021】さらに、絶縁基体2の上面外周部には、タ
ングステンやモリブデン等の金属粉末焼結体から成る幅
が0.4 mm程度の枠状のメタライズ金属層5が搭載部2
aを取り囲むようにして被着形成されている。このメタ
ライズ金属層5には金属製蓋体3が間にろう材6を介し
てエレクトロンビーム溶接により接合されている。
Further, on the outer peripheral portion of the upper surface of the insulating base 2, a frame-shaped metallized metal layer 5 having a width of about 0.4 mm made of a sintered metal powder such as tungsten or molybdenum is mounted.
is formed so as to surround a. A metal lid 3 is joined to the metallized metal layer 5 by electron beam welding with a brazing material 6 interposed therebetween.

【0022】金属製蓋体3は、例えば鉄−ニッケル合金
や鉄−ニッケル−コバルト合金等から成り、絶縁基体2
のメタライズ金属層5に間にろう材6を介してエレクト
ロンビーム溶接により接合されることにより、絶縁基体
2との間で電子部品1を収容して気密に封止している。
The metal lid 3 is made of, for example, an iron-nickel alloy, an iron-nickel-cobalt alloy, or the like.
The electronic component 1 is housed and hermetically sealed between the metallized metal layer 5 and the insulating substrate 2 by electron beam welding with a brazing material 6 interposed therebetween.

【0023】ろう材6は、銀−銅合金や鉛−錫合金・金
−錫合金・アルミニウム−シリコン合金・銅−亜鉛合金
・銀−銅−リン合金あるいは銀−インジウム−錫合金等
から成り、金属製蓋体3をメタライズ金属層5に接合さ
せる接合材として機能する。
The brazing material 6 is made of a silver-copper alloy, a lead-tin alloy, a gold-tin alloy, an aluminum-silicon alloy, a copper-zinc alloy, a silver-copper-phosphorus alloy, a silver-indium-tin alloy, or the like. It functions as a joining material for joining the metal lid 3 to the metallized metal layer 5.

【0024】なお、絶縁基体2として100 ℃における熱
伝導率が15W/m・K以下のものを用いると、このよう
な絶縁基体2は熱を伝えにくいことから、金属製蓋体3
を予備加熱された絶縁基体2のメタライズ金属層5にエ
レクトロンビーム溶接により接合する際に、金属製蓋体
3の上面にエレクトロンビームを照射してもこのエレク
トロンビームによる熱が絶縁基体2に伝わりにくいた
め、絶縁基体2がクラックが発生するような高温となる
ことはない。その結果、エレクトロンビームの熱衝撃に
よる絶縁基体2のクラックが発生することを有効に防止
することができ、絶縁基体2と金属製蓋体3とから成る
容器を気密性が極めて優れたものとして、内部に収容す
る電子部品1を長期間にわたり正常かつ安定に作動させ
ることが可能となる。
If the insulating substrate 2 has a thermal conductivity of 15 W / m · K or less at 100 ° C., it is difficult for such an insulating substrate 2 to conduct heat.
Is bonded to the preheated metallized metal layer 5 of the insulating substrate 2 by electron beam welding, even if the upper surface of the metal lid 3 is irradiated with an electron beam, heat generated by the electron beam is not easily transmitted to the insulating substrate 2. Therefore, the insulating substrate 2 does not reach a high temperature at which cracks occur. As a result, the occurrence of cracks in the insulating substrate 2 due to the thermal shock of the electron beam can be effectively prevented, and the container including the insulating substrate 2 and the metal lid 3 has extremely excellent airtightness. It becomes possible to operate the electronic component 1 housed therein normally and stably for a long period of time.

【0025】さらに、絶縁基体2に熱が伝わりにくいた
めエレクトロンビームによる熱エネルギーが絶縁基体2
側に多量に逃げないことから、ろう材6を溶融させるた
めのエレクトロンビームのエネルギーを少なくして溶接
することができる。
Further, since heat is hardly transmitted to the insulating base 2, heat energy by the electron beam is reduced.
Since a large amount does not escape to the side, welding can be performed while reducing the energy of the electron beam for melting the brazing material 6.

【0026】また、金属製蓋体3が非磁性金属から成る
場合は、金属製蓋体3が外部の磁場の影響を受けたり外
部部材と擦れたりすることによって磁化されることがな
いため、エレクトロンビーム溶接により接合する際に金
属製蓋体3の有する磁力によりエレクトロンビームの照
射位置がずれるようなことがなく、金属製蓋体3の上面
にエレクトロンビームを正確に照射して強固に接合させ
ることができる。
When the metal cover 3 is made of a non-magnetic metal, the metal cover 3 is not magnetized by being affected by an external magnetic field or rubbing against an external member. When joining by beam welding, the irradiation position of the electron beam does not shift due to the magnetic force of the metal lid 3, and the upper surface of the metal lid 3 is accurately irradiated with the electron beam and firmly joined. Can be.

【0027】次に、上述の電子装置を製造するための製
造方法について、添付の図1(a)〜(c)を基に説明
する。図1(a)〜(c)は本発明の製造方法を説明す
るための工程毎の断面図であるまず、図1(a)に示す
ように、電子部品1と絶縁基体2と金属製蓋体3とを準
備する。
Next, a method for manufacturing the above-described electronic device will be described with reference to FIGS. 1 (a) to 1 (c). 1 (a) to 1 (c) are cross-sectional views for each step for explaining a manufacturing method of the present invention. First, as shown in FIG. 1 (a), an electronic component 1, an insulating substrate 2, and a metal lid Prepare body 3.

【0028】電子部品1は、例えば圧電振動子や半導体
素子であり、この例ではその下面に図示しない複数の電
極を有している。
The electronic component 1 is, for example, a piezoelectric vibrator or a semiconductor element, and has a plurality of electrodes (not shown) on its lower surface in this example.

【0029】絶縁基体2は、上述したようにその上面中
央部に電子部品1が搭載される搭載部2aを有してい
る。また、その上面外周部に搭載部2aを取り囲むよう
にして被着された枠状のメタライズ金属層5を有してい
る。
As described above, the insulating base 2 has the mounting portion 2a on which the electronic component 1 is mounted at the center of the upper surface. Further, a frame-shaped metallized metal layer 5 is provided on the outer peripheral portion of the upper surface so as to surround the mounting portion 2a.

【0030】この絶縁基体2は、例えば酸化アルミニウ
ム質焼結体から成る場合であれば、酸化アルミニウムお
よび酸化珪素・酸化マグネシウム・酸化カルシウム等の
原料粉末に適当な有機バインダおよび溶剤を添加混合し
て泥漿状となしたセラミックスラリーを従来周知のドク
ターブレード法やカレンダーロール法を採用してシート
状となすことによって複数枚のセラミックグリーンシー
トを得るとともに、これらに適当な打ち抜き加工を施
し、しかる後、これらのセラミックグリーンシートにメ
タライズ配線導体4やメタライズ金属層5となる金属ペ
ーストを所定のパターンに印刷塗布して上下に積層し、
最後にこれを還元雰囲気中約1600℃の高温で焼成するこ
とによって製作される。
If the insulating substrate 2 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and a solvent are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide and the like. A plurality of ceramic green sheets are obtained by forming the ceramic slurry in the form of a slurry into a sheet by employing a conventionally known doctor blade method or calender roll method, and these are subjected to an appropriate punching process. A metal paste to be a metallized wiring conductor 4 or a metallized metal layer 5 is printed and applied on these ceramic green sheets in a predetermined pattern, and is laminated vertically.
Finally, it is manufactured by firing at a high temperature of about 1600 ° C. in a reducing atmosphere.

【0031】なお、メタライズ配線導体4やメタライズ
金属層5となる金属ペーストは、例えばタングステン等
の金属粉末に適当な有機バインダおよび溶剤を添加混合
することによって得られ、従来周知のスクリーン印刷法
を採用することによってセラミックグリーンシートに所
定のパターン印刷塗布される。
The metal paste for forming the metallized wiring conductor 4 and the metallized metal layer 5 is obtained by adding an appropriate organic binder and a solvent to a metal powder such as tungsten, for example, and adopts a conventionally known screen printing method. As a result, a predetermined pattern is printed and applied to the ceramic green sheet.

【0032】また、絶縁基体2に被着されたメタライズ
配線層4およびメタライズ金属層5は、その露出する表
面にニッケル・金等の耐食性に優れ、かつ半田との濡れ
性に優れる金属をメッキ法により1〜20μmの厚みに被
着させておくと、メタライズ配線層4およびメタライズ
金属層5の酸化腐食を有効に防止することができるとと
もにメタライズ配線層4と電子部品1の電極や外部電気
回路基板の配線導体との接続、およびメタライズ金属層
5と金属製蓋体3とのろう材6を介したエレクトロンビ
ーム溶接による接合を強固なものとなすことができる。
従って、メタライズ配線層4およびメタライズ金属層5
の表面には、ニッケル・金等の耐食性に優れ、かつ半田
等との濡れ性に優れる金属をメッキ法により1〜20μm
の厚みに被着させておくことが好ましい。
The metallized wiring layer 4 and the metallized metal layer 5 adhered to the insulating base 2 are plated with a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with solder on the exposed surface. , The metallized wiring layer 4 and the metallized metal layer 5 can be effectively prevented from being oxidized and corroded, and the metallized wiring layer 4 and the electrodes of the electronic component 1 and the external electric circuit board can be effectively prevented. Of the metallized metal layer 5 and the metal lid 3 via the brazing material 6 by electron beam welding can be made strong.
Therefore, the metallized wiring layer 4 and the metallized metal layer 5
1μm to 20μm of metal with excellent corrosion resistance such as nickel and gold and excellent wettability with solder etc.
It is preferable to adhere to a thickness of.

【0033】金属製蓋体3は、例えば鉄−ニッケル合金
や鉄−ニッケル−コバルト合金等から成る略平板の部材
であり、その下面の全面にろう材6が予め被着されてい
る。
The metal cover 3 is a substantially flat member made of, for example, an iron-nickel alloy or an iron-nickel-cobalt alloy, and a brazing material 6 is previously applied to the entire lower surface thereof.

【0034】このような金属製蓋体3は、鉄−ニッケル
合金や鉄−ニッケル−コバルト合金等から成る広面積の
板状の母材の下面に銀−銅合金や鉛−錫合金等から成る
ろう材を従来周知の圧延法やメッキ法等により所定の厚
みにクラッドさせておくとともに、これを従来周知の打
ち抜き法により所定の形状に打ち抜くことによって、下
面の全面にろう材6を有するように製作される。
Such a metal lid 3 is made of a silver-copper alloy, a lead-tin alloy or the like on the lower surface of a large-area plate-shaped base material made of an iron-nickel alloy or an iron-nickel-cobalt alloy. The brazing material is clad to a predetermined thickness by a conventionally known rolling method, plating method, or the like, and is punched into a predetermined shape by a conventionally known punching method so that the brazing material 6 is provided on the entire lower surface. Be produced.

【0035】次に、図1(b)に示すように、絶縁基体
2の搭載部2aに電子部品1を搭載するとともに、金属
製蓋体3を絶縁基体2のメタライズ金属層5に間にろう
材6を挟んで載置する。
Next, as shown in FIG. 1B, the electronic component 1 is mounted on the mounting portion 2a of the insulating base 2 and the metal cover 3 is interposed between the metallized metal layers 5 of the insulating base 2. It is placed with the material 6 interposed.

【0036】絶縁基体2の搭載部2aに電子部品1を搭
載するには、例えば銀−エポキシ樹脂等の導電性接着剤
を介して電子部品1の電極と絶縁基体1の配線導体4と
を接着固定する方法が採用される。
In order to mount the electronic component 1 on the mounting portion 2a of the insulating base 2, the electrodes of the electronic component 1 and the wiring conductors 4 of the insulating base 1 are bonded via a conductive adhesive such as silver-epoxy resin. The fixing method is adopted.

【0037】そして次に、図1(c)に示すように、金
属製蓋体3の上面にろう材6が溶融しない出力のエレク
トロンビーム7aを枠状のメタライズ金属層5に沿って
少なくとも1周照射して、絶縁基体2を予備加熱する。
Then, as shown in FIG. 1 (c), an electron beam 7a having an output in which the brazing material 6 does not melt is applied to the upper surface of the metal cover 3 at least once along the frame-shaped metallized metal layer 5. Irradiation preheats the insulating substrate 2.

【0038】なお、この予備加熱は、例えば金属製蓋体
3が厚み0.1 mmの鉄−コバルト−ニッケル合金から成
る場合であれば、金属製蓋体3の上面に1〜3mA・30
〜90Wの出力で直径0.1 〜0.2 mm程度のエレクトロン
ビームを300 mm/秒程度の速度でメタライズ金属層5
に沿って移動させながら少なくとも1周照射すればよ
い。この時、絶縁基体2のメタライズ金属層5の直下に
おける温度が約50〜200℃程度となる。
The preheating is performed, for example, when the metal lid 3 is made of an iron-cobalt-nickel alloy having a thickness of 0.1 mm, the upper surface of the metal lid 3 has a thickness of 1 to 3 mA · 30.
An electron beam having a diameter of about 0.1 to 0.2 mm at a power of about 90 W and a metallized metal layer 5 at a speed of about 300 mm / sec.
It is sufficient to irradiate at least one round while moving along. At this time, the temperature immediately below the metallized metal layer 5 of the insulating base 2 is about 50 to 200 ° C.

【0039】そして最後に、図1(d)に示すように、
金属製蓋体3の上面にろう材6が溶融する出力のエレク
トロンビーム7bを枠状のメタライズ金属層5に沿って
少なくとも1周照射して金属製蓋体2をメタライズ金属
層5にろう材6を介して接合することによって、電子装
置が完成する。
Finally, as shown in FIG.
The upper surface of the metal cover 3 is irradiated with an output electron beam 7b at which the brazing material 6 melts along the frame-shaped metallized metal layer 5 at least one round, and the metal cover 2 is applied to the metallized metal layer 5 by the brazing material 6. Thus, the electronic device is completed.

【0040】このとき、絶縁基体2は予備加熱により予
め温まっているので、金属製蓋体3の上面にろう材6が
溶融する出力のエレクトロンビーム7bを照射してもこ
のエレクトロンビーム7bの熱による絶縁基体2の温度
上昇幅を小さいものとすることができる。その結果、エ
レクトロンビーム7bの熱による熱衝撃が緩和されて絶
縁基体2にクラックが発生することが有効に防止され、
電子部品を収容する容器を気密性が極めて優れたものと
して内部に収容する電子部品を長期間にわたり正常かつ
安定に作動させることができる電子装置を提供すること
ができる。
At this time, since the insulating base 2 is preheated by the preliminary heating, even if the upper surface of the metal lid 3 is irradiated with an electron beam 7b of an output in which the brazing material 6 melts, the heat of the electron beam 7b causes The temperature rise of the insulating base 2 can be reduced. As a result, the thermal shock due to the heat of the electron beam 7b is reduced, and the occurrence of cracks in the insulating substrate 2 is effectively prevented,
It is possible to provide an electronic device in which a container for housing electronic components has extremely excellent airtightness and can operate the electronic components housed therein in a normal and stable manner for a long period of time.

【0041】かくして本発明の電子装置の製造方法によ
れば、絶縁基体2と金属製蓋体3とから成る容器の内部
に電子部品1が高い気密信頼性で収容された電子装置が
得られる。
Thus, according to the method for manufacturing an electronic device of the present invention, an electronic device in which the electronic component 1 is housed with high airtight reliability inside a container including the insulating base 2 and the metal lid 3 can be obtained.

【0042】[0042]

【実施例】〔例1〕上面中央部に長さが2.2 mmで幅が
0.2 mm、深さが0.25mmの略直方体状の凹部を有する
とともに、上面外周部にこの凹部を取り囲む幅が0.4 m
mで厚みが20μmの枠状のタングステンから成るメタラ
イズ金属層を有する、長さが3mmで幅が2mm、厚み
が0.5 mmの略四角平板状の酸化アルミニウム質焼結体
から成る絶縁基体を準備した。そして、メタライズ金属
層表面には厚みが5μmのニッケルメッキ層を電解メッ
キ法により被着させた。
[Example] [Example 1] At the center of the upper surface, the length is 2.2 mm and the width is
It has a substantially rectangular parallelepiped recess with a depth of 0.2 mm and a depth of 0.25 mm.
An insulating substrate made of a substantially square plate-shaped aluminum oxide sintered body having a length of 3 mm, a width of 2 mm, and a thickness of 0.5 mm having a metallized metal layer made of frame-shaped tungsten having a thickness of 20 μm and a thickness of 20 μm was prepared. . Then, a nickel plating layer having a thickness of 5 μm was applied to the surface of the metallized metal layer by an electrolytic plating method.

【0043】また、下面の全面に銀72重量%−銅28重量
%から成る厚みが10μmのろう材をクラッド法により被
着させた、長さが3mmで幅が2mm、厚みが0.1 mm
の鉄−ニッケル−コバルト合金板からなる平板状の金属
製蓋体を準備した。
A 10 μm thick brazing material consisting of 72% by weight of silver and 28% by weight of copper was applied to the entire lower surface by a cladding method. The length was 3 mm, the width was 2 mm, and the thickness was 0.1 mm.
A flat metal lid made of an iron-nickel-cobalt alloy plate was prepared.

【0044】そして、絶縁基体のメタライズ金属層上に
金属製蓋体をろう材を挟んで載置して、金属製蓋体の上
面に2mA・60Wの出力で直径が0.2 mmのエレクトロ
ンビームをメタライズ金属層に沿って300 mm/秒の速
度で移動させながら2周照射して予備加熱を行なった。
その後、これに引き続いて金属製蓋体の上面に4mA・
120 Wの出力で直径0.2 mmのエレクトロンビームをメ
タライズ金属層に沿って300 mm/秒の速度で移動させ
ながら1周照射してろう材を溶融させることにより、メ
タライズ金属層と金属製蓋体とをろう材を介して接合
し、本発明の電子装置の試料とした。
Then, a metal lid is placed on the metallized metal layer of the insulating substrate with a brazing material interposed therebetween, and an electron beam having a diameter of 0.2 mm and a power of 2 mA / 60 W is metallized on the upper surface of the metal lid. Preliminary heating was performed by irradiating two rounds while moving at a speed of 300 mm / sec along the metal layer.
Then, following this, 4 mA
The metallized metal layer and the metal lid are formed by irradiating an electron beam having a diameter of 0.2 mm with an output of 120 W along the metallized metal layer at a speed of 300 mm / sec. Were joined via a brazing material to obtain a sample of the electronic device of the present invention.

【0045】また、比較のために上述と同じ寸法・材質
の絶縁基体および金属製蓋体を用い、絶縁基体のメタラ
イズ金属層に金属製蓋体を載置した後、予備加熱を行な
わずに絶縁基体の上面に4mA・120 Wの出力で直径0.
2 mmのエレクトロンビームをメタライズ金属層に沿っ
て300 mm/秒の速度で移動させながら1周照射してろ
う材を溶融させることにより、メタライズ金属層と金属
製蓋体とをろう材を介して接合し、比較例の電子装置の
試料とした。
For comparison, an insulating base and a metal lid having the same dimensions and materials as described above were used, and after placing the metal lid on the metallized metal layer of the insulating base, the insulation was performed without preheating. With a power of 4 mA and 120 W on the upper surface of the base, the diameter is 0.2 mm.
The metallized metal layer and the metal lid are melted by irradiating one round with a 2 mm electron beam moving along the metallized metal layer at a speed of 300 mm / sec to melt the brazed material. This was joined to obtain a sample of an electronic device of a comparative example.

【0046】なお、本発明の試料と比較例の試料はそれ
ぞれ25個ずつ作製した。
Incidentally, 25 samples of the present invention and 25 samples of the comparative example were produced.

【0047】その後、各試料について接合された金属製
蓋体を硝酸で溶解除去し、絶縁基体におけるクラックの
有無を目視により調べた。その結果、比較例の電子装置
では全ての試料にクラックが確認されたのに対して本発
明の電子装置の試料ではクラックの発生は皆無であっ
た。
Thereafter, the metal lid joined to each sample was dissolved and removed with nitric acid, and the presence or absence of cracks in the insulating substrate was visually inspected. As a result, cracks were confirmed in all the samples in the electronic device of the comparative example, whereas no cracks occurred in the sample of the electronic device of the present invention.

【0048】〔例2〕〔例1〕と同様の絶縁基体を準備
するとともに、金属製蓋体として、下面の全面に鉛90重
量%−錫10重量%から成る厚みが20μmのろう材をクラ
ッド法により被着させた、長さが3mmで幅が2mm、
厚みが0.1 mmの鉄−ニッケル−コバルト合金板からな
る平板状のものを準備した。
Example 2 The same insulating substrate as in Example 1 was prepared, and a brazing filler metal of 90% by weight of lead and 10% by weight of tin and having a thickness of 20 μm was clad on the entire lower surface as a metal lid. 3 mm in length and 2 mm in width,
A flat plate made of an iron-nickel-cobalt alloy plate having a thickness of 0.1 mm was prepared.

【0049】そして、絶縁基体のメタライズ金属層上に
金属製蓋体をろう材を挟んで載置して、金属製蓋体の上
面に1.5 mA・45Wの出力で直径が0.2 mmのエレクト
ロンビームをメタライズ金属層に沿って300 mm/秒の
速度で移動させながら2周照射して予備加熱を行なっ
た。その後、これに引き続いて金属製蓋体の上面に2.5
mA・75Wの出力で直径0.2 mmのエレクトロンビーム
をメタライズ金属層に沿って300 mm/秒の速度で移動
させながら1周照射してろう材を溶融させることによ
り、メタライズ金属層と金属製蓋体とをろう材を介して
接合し、本発明の電子装置の試料とした。
Then, a metal lid is placed on the metallized metal layer of the insulating base with a brazing material interposed therebetween, and an electron beam having a diameter of 0.2 mm and a power of 1.5 mA / 45 W is applied to the upper surface of the metal lid. Preheating was performed by irradiating two rounds while moving at a speed of 300 mm / sec along the metallized metal layer. Then, follow this with 2.5 mm on the top of the metal lid.
The metallized metal layer and the metal lid are formed by irradiating an electron beam having a diameter of 0.2 mm with a power of mA · 75 W along the metallized metal layer at a speed of 300 mm / sec. Were joined via a brazing material to obtain a sample of the electronic device of the present invention.

【0050】この本発明の試料を25個作製して、各試料
について接合された金属製蓋体を硝酸で溶解除去し、絶
縁基体におけるクラックの有無を目視により調べた。そ
の結果、これらの本発明の電子装置の試料でもクラック
の発生は皆無であった。
Twenty-five samples of the present invention were prepared, and the metal lids bonded to each sample were dissolved and removed with nitric acid, and the presence or absence of cracks in the insulating substrate was visually inspected. As a result, no cracks occurred in these electronic device samples of the present invention.

【0051】また、ろう材として金80重量%−錫20重量
%から成るろう材を用いて同様の条件により本発明の電
子装置の試料を作製し、この本発明の試料25個について
も同様にしてクラックの有無を調べたところ、これらの
本発明の電子装置の試料でもクラックの発生は皆無であ
った。
A sample of the electronic device of the present invention was manufactured under the same conditions using a brazing material consisting of 80% by weight of gold and 20% by weight of tin as the brazing material. When the presence or absence of cracks was examined, no cracks occurred in these electronic device samples of the present invention.

【0052】上記の鉛90重量%−錫10重量%から成るろ
う材および金80重量%−錫20重量%から成るろう材は比
較的融点が低いものであるが、本発明の製造方法によっ
て予備加熱を行なうことにより、ろう材の流れが良好と
なって絶縁基体と金属製蓋体との間に隙間なく良好なメ
ニスカスが形成され、絶縁基体と金属製蓋体とを強固に
接合させることができた。また、良好なメニスカスが形
成されたことから、絶縁基体と金属製蓋体との隙間から
水分等が侵入するようなこともなく、内部の腐食等の不
具合が良好に防止された。
The above brazing material consisting of 90% by weight of lead and 10% by weight of tin and the brazing material consisting of 80% by weight of gold and 20% by weight of tin have relatively low melting points. By performing the heating, the flow of the brazing material becomes good, a good meniscus is formed without a gap between the insulating base and the metal lid, and the insulating base and the metal lid can be firmly joined. did it. In addition, since a good meniscus was formed, moisture and the like did not enter through the gap between the insulating base and the metal lid, and problems such as internal corrosion were successfully prevented.

【0053】なお、本発明は上述の実施の形態の一例に
限定されるものではなく、本発明の要旨を逸脱しない範
囲であれば種々の変更・改良が可能であることは言うま
でもない。
Note that the present invention is not limited to the above-described embodiment, and it is needless to say that various changes and improvements can be made without departing from the scope of the present invention.

【0054】[0054]

【発明の効果】本発明の電子装置の製造方法によれば、
金属製蓋体の上面にろう材が溶融する出力のエレクトロ
ンビームを照射して金属製蓋体をメタライズ金属層にろ
う材を介して接合する前に、ろう材が溶融しない出力の
エレクトロンビームを金属製蓋体の上面に照射して絶縁
基体を予備加熱しておくことから、金属製蓋体をメタラ
イズ金属層にろう材を介して接合する際に予備加熱によ
り絶縁基体が予め温まっているので、これにより絶縁基
体に印加される熱衝撃を緩和することができる。
According to the electronic device manufacturing method of the present invention,
Before the metal lid is joined to the metallized metal layer via the brazing material by irradiating the upper surface of the metal lid with an electron beam that melts the brazing material, an electron beam with a power that does not melt the brazing metal is used. Since the insulating base is preheated by irradiating the upper surface of the lid body, since the insulating base is previously heated by the preheating when joining the metal lid to the metallized metal layer via the brazing material, Thereby, the thermal shock applied to the insulating base can be reduced.

【0055】その結果、絶縁基体にクラックが発生する
ことが有効に防止され、また、ろう材による良好なメニ
スカスを形成することができ、電子部品を収容する容器
を気密性が極めて優れたものとして、内部に収容する電
子部品を長期間にわたり正常かつ安定に作動させること
ができる電子装置を提供することができる。
As a result, the occurrence of cracks in the insulating base is effectively prevented, a good meniscus can be formed by the brazing material, and the container for housing the electronic components is made to have extremely excellent airtightness. In addition, it is possible to provide an electronic device that can normally and stably operate electronic components housed therein for a long period of time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)〜(d)は、それぞれ本発明の電子装置
の製造方法を説明するための工程毎の断面図である。
FIGS. 1A to 1D are cross-sectional views for explaining steps of a method for manufacturing an electronic device according to the present invention.

【図2】本発明の製造方法により製造される電子装置の
実施の形態の一例を示す断面図である。
FIG. 2 is a sectional view showing an example of an embodiment of an electronic device manufactured by the manufacturing method of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・電子部品 2・・・・・絶縁基体 2a・・・・搭載部 3・・・・・金属製蓋体 5・・・・・メタライズ金属層 6・・・・・ろう材 7a・・・・ろう材6が溶融しない出力のエレクトロン
ビーム 7b・・・・ろう材6が溶融する出力のエレクトロンビ
ーム
DESCRIPTION OF SYMBOLS 1 ... Electronic component 2 ... Insulating base 2a ... Mounting part 3 ... Metal cover 5 Metallized metal layer 6 Brazing filler metal 7a... An electron beam with an output in which the brazing material 6 does not melt 7b... An electron beam with an output in which the brazing material 6 melts

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】電子部品と、上面に前記電子部品が搭載さ
れる搭載部および該搭載部を取り囲むようにして被着さ
れた枠状のメタライズ金属層を有する絶縁基体と、該絶
縁基体の前記メタライズ金属層に接合され、前記絶縁基
体との間の空間に前記電子部品を収容する金属製蓋体と
を準備する工程と、 前記絶縁基体の前記搭載部に前記電子部品を搭載する工
程と、 前記絶縁基体の前記メタライズ金属層上に前記金属製蓋
体を間にろう材を挟んで載置する工程と、 前記金属製蓋体の上面に前記ろう材が溶融しない出力の
エレクトロンビームを前記枠状のメタライズ金属層に沿
って少なくとも1周照射することによって前記絶縁基体
を予備加熱する工程と、 前記金属製蓋体の上面に前記ろう材が溶融する出力のエ
レクトロンビームを前記枠状のメタライズ金属層に沿っ
て少なくとも1周照射することによって前記金属製蓋体
を前記メタライズ金属層に前記ろう材を介して接合する
工程とを具備することを特徴とする電子装置の製造方
法。
An insulating base having an electronic component, a mounting portion on which the electronic component is mounted, and a frame-shaped metallized metal layer attached so as to surround the mounting portion; A step of preparing a metal lid joined to the metallized metal layer and accommodating the electronic component in a space between the insulating base and a step of mounting the electronic component on the mounting portion of the insulating base; Placing the metal lid on the metallized metal layer of the insulating base with a brazing material interposed therebetween; and applying an electron beam having an output such that the brazing material does not melt on the upper surface of the metal lid. Preheating the insulating substrate by irradiating at least one round along the metallized metal layer in the shape of a metal, and applying an electron beam of an output that melts the brazing material on the upper surface of the metal lid to the frame-shaped metal. Bonding the metal cover to the metallized metal layer via the brazing material by irradiating the metalized metal layer at least one time along the metallized metal layer.
JP27403798A 1998-09-28 1998-09-28 Electronic device manufacturing method Expired - Fee Related JP3232051B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27403798A JP3232051B2 (en) 1998-09-28 1998-09-28 Electronic device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27403798A JP3232051B2 (en) 1998-09-28 1998-09-28 Electronic device manufacturing method

Publications (2)

Publication Number Publication Date
JP2000106404A true JP2000106404A (en) 2000-04-11
JP3232051B2 JP3232051B2 (en) 2001-11-26

Family

ID=17536094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27403798A Expired - Fee Related JP3232051B2 (en) 1998-09-28 1998-09-28 Electronic device manufacturing method

Country Status (1)

Country Link
JP (1) JP3232051B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106630A (en) * 2013-11-29 2015-06-08 日立金属株式会社 Base material with brazing filler metal and method for manufacturing base material with brazing filler metal
US20150319865A1 (en) * 2012-10-05 2015-11-05 Tyco Electronics Corporation Electrical components and methods and systems of manufacturing electrical components
KR102567546B1 (en) * 2022-10-17 2023-08-17 주식회사 윌인스트루먼트 Bonding Picker, Bonding Apparatus, Bonding Method and Repair Method Including The Same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150319865A1 (en) * 2012-10-05 2015-11-05 Tyco Electronics Corporation Electrical components and methods and systems of manufacturing electrical components
US10154595B2 (en) * 2012-10-05 2018-12-11 Te Connectivity Corporation Electrical components and methods and systems of manufacturing electrical components
JP2015106630A (en) * 2013-11-29 2015-06-08 日立金属株式会社 Base material with brazing filler metal and method for manufacturing base material with brazing filler metal
KR102567546B1 (en) * 2022-10-17 2023-08-17 주식회사 윌인스트루먼트 Bonding Picker, Bonding Apparatus, Bonding Method and Repair Method Including The Same

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