JP2000101089A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000101089A5 JP2000101089A5 JP1998271737A JP27173798A JP2000101089A5 JP 2000101089 A5 JP2000101089 A5 JP 2000101089A5 JP 1998271737 A JP1998271737 A JP 1998271737A JP 27173798 A JP27173798 A JP 27173798A JP 2000101089 A5 JP2000101089 A5 JP 2000101089A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- substrate
- semiconductor
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27173798A JP4228248B2 (ja) | 1998-09-25 | 1998-09-25 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
| US09/798,852 US6696309B2 (en) | 1998-09-25 | 2001-03-02 | Methods for making electrooptical device and driving substrate therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27173798A JP4228248B2 (ja) | 1998-09-25 | 1998-09-25 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000101089A JP2000101089A (ja) | 2000-04-07 |
| JP2000101089A5 true JP2000101089A5 (enrdf_load_stackoverflow) | 2005-11-04 |
| JP4228248B2 JP4228248B2 (ja) | 2009-02-25 |
Family
ID=17504139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27173798A Expired - Fee Related JP4228248B2 (ja) | 1998-09-25 | 1998-09-25 | 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4228248B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2356372B1 (de) * | 2008-12-11 | 2016-08-10 | OSRAM OLED GmbH | Organische leuchtdiode und beleuchtungsmittel |
| CN108803172B (zh) * | 2018-06-29 | 2021-08-10 | 上海中航光电子有限公司 | 一种阵列基板、显示面板及显示装置 |
-
1998
- 1998-09-25 JP JP27173798A patent/JP4228248B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000111943A5 (enrdf_load_stackoverflow) | ||
| EP0969505A3 (en) | SOI substrate | |
| JP2000150905A5 (enrdf_load_stackoverflow) | ||
| EP0993048A3 (en) | Nitride semiconductor device and its manufacturing method | |
| BR9509944A (pt) | Processo de fabricação de estrutura semicondutora de múltiplas camadas para célula de multijunção estrutura e dispositivo de semicondutor | |
| JP2003324188A (ja) | 大面積単結晶シリコン基板の製造方法 | |
| US8139175B2 (en) | Thin film transistor, thin film transistor substrate, and methods for manufacturing the same | |
| JPS58132975A (ja) | 半導体装置およびその製法 | |
| EP0866493A3 (en) | Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate | |
| JPH08148430A (ja) | 多結晶半導体薄膜の作成方法 | |
| JP2560765B2 (ja) | 大面積半導体基板の製造方法 | |
| JP2000101089A5 (enrdf_load_stackoverflow) | ||
| JPH03100516A (ja) | 液晶表示装置の製造方法 | |
| JP2004214400A5 (enrdf_load_stackoverflow) | ||
| US6951585B2 (en) | Liquid-phase growth method and liquid-phase growth apparatus | |
| RU2102817C1 (ru) | Способ изготовления полупроводниковых структур | |
| JPS602789B2 (ja) | ＧａＰ単結晶ウェハ−の判別方法 | |
| JP4162749B2 (ja) | 多結晶シリコン膜の成長方法 | |
| JPS59121823A (ja) | 単結晶シリコン膜形成法 | |
| JP2001176796A (ja) | 半導体膜の形成方法および半導体装置 | |
| JPS60164316A (ja) | 半導体薄膜の形成方法 | |
| JP2003197524A (ja) | 半導体膜の形成方法及び半導体膜、半導体装置、並びにディスプレイ装置 | |
| KR20070096865A (ko) | 반도체 소자, 반도체 장치 및 그들의 제조 방법 | |
| JPH01222432A (ja) | 半導体装置の製造方法 | |
| JP2001223161A (ja) | 結晶性半導体膜の製造方法、基板及び半導体装置 |