JP2000090745A - Transparent conductive membrane - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transparent conductive membrane which shows an excellent conductivity and can transmit light whose wave length is shorter than 400 nm, and a material which can form the membrane, and moreover an electrode constructed of the transparent conductive membrane. SOLUTION: This transparent conductive membrane and an electrode composed of the membrane, shown by a formula of In2-xYxO3+αwt.%SnO2 Or In2-xYXO3+wt.%Sb2O5, where x is a real number in a range of 0.9-1.6 and αis a real number in a range of O-15, contain at least one of In2O3, Y2O3, SnO2 or Sb2O5, In2O3-Y2O3 solid solution, Y2O3-SnO2 solid solution or Y2O3-Sb2O5 solid solution, and In2O3-Y2O3-Sb2O5 solid solution to provide a composition as shown by the formula.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a transparent conductive thin film,
The present invention relates to an electrode comprising the thin film and a composition for a transparent conductive material used as a target for forming the thin film.

[0002] With the development of light sources, technology using ultraviolet light has been widely spread in society. For example, in photolithography, a key technology in semiconductor processes, i-line (wavelength 365 nm), KrF laser light (wavelength 298 nm), Ar
Fine patterning is performed using ultraviolet light such as F laser light (wavelength 196 nm). In the medical field, for example, it is recommended to analyze biological samples such as blood and DNA by ultraviolet fluorescence analysis. Further, for example, in the field of space technology, the power generation efficiency of a solar cell can be increased by using ultraviolet light which is often present in outer space.

The transparent conductive thin film of the present invention can be used as a transparent electrode material and an electrode, for example, as an antistatic film in a photolithographic process using ultraviolet light such as i-ray (wavelength 365 nm). Further, for example, it can be used as an antistatic film on a sample substrate or a transparent electrode for applying an electric field to a sample cell in ultraviolet fluorescence analysis of a biological sample or the like. Further, for example, it can be used as a transparent electrode for an ultraviolet solar cell.

[0004]

2. Description of the Related Art Indium tin oxide (ITO) is used as a transparent electrode material.
xide), ATO (Antimony doped TinOxide), AZO (Al
uminum doped Zinc Oxide), ITO is mainly used for flat panel displays, and AT is mainly used for solar cells.
O is used.

[0005] These transparent electrodes have high electric conductivity and high transparency in the visible region. For this reason, it is possible to radiate the color emitted from the flat panel display without disturbing the light, and it is possible to efficiently take in the visible-range sunlight containing most of the energy into the solar cell.

[0006]

The conventional transparent electrode material has a light absorption edge wavelength near 400 nm. 400 nm for this
Light with a longer wavelength, ie, visible light, can be transmitted efficiently, but light with a wavelength shorter than 400 nm, ie, ultraviolet light, could hardly be transmitted. In a recent study,
Although it has been shown that Ga ₂ O ₃ can be a transparent electrode material in the ultraviolet region, it has not reached practical use (N. Ueda et al., App.
l.Phys.Lett. 70 (26) 3561,1997 and N.Ueda et al., App
l.Phys. Lett. 71 (7) 933,1997). In this study, a Ga ₂ O ₃ single crystal was formed in a hydrogen atmosphere, and electrical conductivity was not confirmed in the shape of a film required for antistatic or as a transparent electrode. In addition, no transparent electrode material transparent in the ultraviolet region has been reported. Accordingly, an object of the present invention is to provide a transparent conductive thin film that exhibits good conductivity and can transmit light having a wavelength shorter than 400 nm, a material for forming such a thin film, and a transparent conductive thin film. An object of the present invention is to provide an electrode made of a thin film.

[0007]

SUMMARY OF THE INVENTION The present invention provides a compound of the general formula In _2-x Y
_x O ₃ + α wt% SnO ₂ (where x is a real number in the range of 0.9 to 1.6, and α is a real number in the range of 0 to 15) and a general formula In _{2− x} Y _x O ₃ + αwt%
Sb ₂ O ₅ (where x is a real number in the range of 0.9 to 1.6, α
Is a real number in the range of 0 to 15), and an electrode comprising these thin films. Furthermore, the present invention relates to In ₂ O ₃ , Y ₂ O ₃ , SnO ₂ , In ₂
At least one of an O ₃ —Y ₂ O ₃ solid solution, a Y ₂ O ₃ —SnO ₂ solid solution and an In ₂ O ₃ —Y ₂ O ₃ —SnO ₂ solid solution is represented by the general formula In _2-x Y _x O ₃ + α wt% SnO. ₂ (where x is 0.9
Is a real number in a range of from 1.6 to 1.6, and α is a real number in a range of from 0 to 15), and a composition for a transparent conductive material including a composition represented by the following formula: In ₂ O ₃ , Y ₂ O ₃ , Sb ₂ O
_{5, In 2 O 3 -Y 2} O 3 solid _solution, Y _{2 O 3} -Sb 2 _O
5 and at least one of the In ₂ O ₃ —Y ₂ O ₃ —Sb ₂ O ₅ solid solution is represented by the general formula In _2-x Y _x O ₃ + α wt% Sb ₂
O ₅ (where x is a real number in the range of 0.9 to 1.6 and α is 0
(A real number in the range of ~ 15).

[0008]

Next, the transparent conductive thin film of the present invention will be described. The transparent conductive thin film of the present invention has the general formula In
_2-x Y _x O ₃ + α wt% SnO ₂ or In _2-x Y _x O ₃ + α wt%
It is represented by Sb ₂ O ₅ . The value of x is selected in consideration of the light transmission characteristics and electric conductivity required for the thin film, and is a real number in the range of 0.9 to 1.6. The absorption edge wavelength shifts to the shorter wavelength side as the value of x increases, and the transparency from the blue region to the ultraviolet region increases. On the other hand, the electric conductivity tends to decrease as the value of x increases. When the value of x is less than 0.9, the transparency from the blue region to the ultraviolet region is not different from the conventional transparent electrode material. On the other hand, when x is larger than 1.6, the electric conductivity is low and cannot be used as a conductive material. Preferred x ranges from 0.9 to 1.2.

Further, the thin film of the present invention contains Sn or Sb as a dopant ion. Conventionally, Sn is In ₂ O ₃
Has been used as a dopant. In ₂ O ₃
The addition of Sn as a dopant to the so-called ITO
It is. In ITO, it is said that the added Sn forms a solid solution at the In site in the In ₂ O ₃ lattice, exists in the form of Sn ⁴⁺ , and generates one carrier electron per Sn ⁴⁺ ion. However, when ITO is in the amorphous phase, Sn ⁴⁺ ions exist in the form of SnO ₂ clusters and do not contribute to carrier generation. Also in the transparent conductive thin film of the present invention, if the thin film is a crystalline phase, Sn is a solid solution to the In site of In ₂ O ₃ lattice, in the form of Sn ^4+, contribute to carrier generation It is thought to be. However, when the thin film is in an amorphous phase, such an effect cannot be expected.

In the thin film of the present invention, Sn or Sb as a dopant ion is converted to SnO ₂ or Sb ₂ O ₅ and α
wt% (α is a real number in the range of 0 to 15).
If the content of SnO ₂ exceeds 15 wt%, SnO ₂ tends to segregate, and the electrical conductivity decreases. The preferred range of αwt% is 3 to 12. SnO ₂ content is 3wt%
Above, the effect of doping becomes remarkable, the carrier density increases, and high electric conductivity can be obtained. When the content of SnO ₂ is 12 wt% or less, scattering of carriers by the dopant ions hardly occurs, mobility and conductivity are hardly reduced, and high electric conductivity is obtained. A more preferable range of αwt% is 5 to 1
In this range, a sufficient carrier density can be obtained, the mobility does not become too low, and a sufficient conductivity can be obtained. When the dopant ion is Sb,
αwt% is the same as in the case of Sn.

The electrical conductivity of the thin film of the present invention is developed by carrier electrons supplied from oxygen defects existing in the material and Sn ions or Sb ions as dopants.

The transparent conductive oxide thin film of the present invention may have a crystalline phase or an amorphous phase, and can be appropriately determined according to the use. When the crystalline phase is used, the electric conductivity tends to be improved and the transparency tends to be improved as compared with the case where the amorphous phase is used. On the other hand, the etching property by an acid solution or the like tends to be reduced. The transparent conductive thin film of the present invention has ultraviolet transparency and can be used as a transparent electrode, an antistatic film, an infrared reflective film, and the like.

The transparent conductive thin film of the present invention can be prepared by a usual film forming method, for example, a sputtering method, a laser ablation method, a vapor deposition method, a CVD method, a spray pyrolysis method and the like. For example, when using a sputtering method, a sintered body of the composition for a transparent conductive material of the invention described below is used as a target, a mixed gas of Ar and O ₂ is introduced into a vacuum vessel, and a plasma is generated by applying an rf electric field. Let
The target may be hit with the plasma, and the hit substance may be deposited on the substrate surface. Ar / O ₂ mixing ratio, rf
The crystallinity, transparency, and electrical conductivity of the transparent conductive thin film of the present invention can be optimized by adjusting the current, the substrate temperature, the distance between the substrate and the target, and the like. Also,
Using a metal alloy of In, Y, and Sn as a target, the transparent conductive thin film of the present invention can be formed by reacting with O ₂ on the substrate surface. One of the advantages of using a metal target is that the impurity concentration in the target can be extremely reduced.

For example, when the laser ablation method is used, a sintered body of the composition for a transparent conductive material of the present invention described later is used as a target, O ₂ gas is introduced into a vacuum vessel, and laser light is applied. The target surface may be irradiated, and a substance emitted by the irradiation may be deposited on the substrate surface. By adjusting the O ₂ gas pressure, laser light output, substrate temperature, substrate-target distance, etc., the crystallinity, transparency and electric conductivity of the transparent conductive thin film of the present invention can be optimized. . In particular, when using a pulse laser to adjust the amount of material deposited on the substrate for each position pulse,
Crystals can be grown for each atomic layer. The state of growth can be monitored in situ by using, for example, RHEED. In this case, a film having high single crystallinity can be formed.

Next, the composition for a transparent conductive material of the present invention will be described.
Will be described. The composition for a transparent conductive material of the present invention comprises I
n₂O₃, Y₂O₃, SnO₂, In ₂O₃-Y₂O₃
Solid solution, Y₂O₃-SnO₂Solid solution and In₂O₃-Y₂
O₃-SnO₂At least one of the solid solutions is represented by the general formula In_2-x
Y_xO_Three+ Αwt% SnO₂So that the composition shown by
No. This composition is, for example, In₂O₃, Y₂O₃as well as
SnO₂Mixed system of In₂O₃-Y₂O₃Solid solution and Sn
O₂Mixed system with In ₂O₃, Y₂O₃, SnO₂, I
n₂O₃-Y₂O₃Solid solution, Y₂O₃-SnO ₂Solid solution
And In₂O₃-Y₂O₃-SnO₂In a mixed solution of solid solution, etc.
There can be.

Further, another transparent conductive material of the present invention
Composition for In₂O₃, Y₂O₃, Sb₂O₅, In
₂O₃-Y₂O₃Solid solution, Y₂O₃-Sb₂O₅Solid solution
And In₂O₃-Y₂O₃-Sb₂O₅At least a solid solution
One is also represented by the general formula In_2-xY_xO_Three+ Αwt% Sb₂O₅Indicated by
It is included so that it may become the composition to be performed. This composition, for example,
In₂O₃, Y₂O₃And Sb₂O₅Mixed system of In₂
O₃-Y₂O₃Solid solution and Sb₂O₅Mixed system with In₂
O₃, Y₂O₃, Sb₂O₅, In₂O₃-Y ₂O₃Solid
Solution, Y₂O₃-Sb₂O₅Solid solution and In₂O₃-Y₂
O₃-Sb₂O ₅It can be a solid solution mixed system, etc.
You.

Further, the composition may be a powder or a sintered body. The powder may be, for example, a powder of a solid solution crystal having the above composition, and In mixed mixed to have the above composition.
A mixed powder of ₂ O ₃ powder, Y ₂ O ₃ powder and SnO ₂ powder (or Sb ₂ O ₅ powder) may be used, or a solid solution crystal powder and In ₂ O ₃ powder and / or
Or Y ₂ O ₃ powder and / or SnO ₂ powder (or Sb ₂ O
₅ ). These powders can be used as raw materials for a sintered body target, a melt for thermal spraying, a strong acid solution, and the like. Further, the sintered body may have, for example, a solid solution crystal phase having the above composition, a mixed phase of an In ₂ O ₃ phase and a Y ₂ O ₃ phase mixed to have the above composition, or a solid solution It may be a mixed phase of a crystal phase and an In ₂ O ₃ phase and a Y ₂ O ₃ phase,
An amorphous phase may be used.

In the above general formula, x is in the range of 0.9 to 1.6
And preferably in the range of 0.9 to 1.2.
In the above general formula, αwt% is in the range of 0 to 15.
Is a real number. Incidentally, the composition of the present invention is represented by Y₂O₃-SnO
₂Solid solution and In₂O₃-Y₂O ₃-SnO₂Low solid solution
If at least one is included, the SnO₂The content is
Contained in solid solution₂And SnO₂And the total amount
is there. In addition, the composition of the present invention is represented by Y₂O₃-Sb₂O₅Solid
Solution and In₂O₃-Y₂O₃-Sb₂O₅Low solid solution
If at least one is included, the above Sb₂O₅The content is
Sb contained in solid solution₂O₅And Sb₂O₅Sum with
Quantity. The preferred range of αwt% is 3 to 12,
A more preferred range is from 5 to 10. X and x
Using as a target a material with a
Thus, the above-described thin film of the present invention can be formed.

The above composition can be used, for example, as a target for a sputtering method or a laser ablation method, and the transparent conductive thin film of the present invention can be formed on an appropriate substrate using this target. The target may be formed, for example, by using a powder of the composition of the present invention and performing an ordinary solid-phase ceramic process. That is, for example, the powder of the composition of the present invention is filled into a cylinder mold having an appropriate diameter, a push rod is inserted into the mold, and the mixture is pressed uniaxially to form a compact. The sintered body may be fired in the air at a temperature of 1000 ° C. or higher, and the surface of the obtained sintered body may be polished to expose a clean surface. Also,
The powder of the composition of the present invention is dispersed in an appropriate medium to form a slurry, formed by slip casting, molded, dried to obtain a dense molded body, and fired in the air at a temperature of 1000 ° C. or more, and the obtained fired The surface of the union may be polished to expose a clean surface. In general, it is preferable that a target of a sputtering method or a laser ablation method be dense, so that a process capable of densification may be selected.

[0020]

The present invention will be described below with reference to examples. Example 1 In ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.)
And Y ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.) were weighed at a molar ratio of 5: 5, and SnO ₂ (purity 99.99%, Furuuchi Chemical Co., Ltd.) was added to the mixed powder. 5)
weighed so as to be wt%, 200 g of YSZ beads 2 mm in diameter in a polyimide pot having a capacity of 500 ml and
After mixing with 80 ml of ethanol and stirring at 200 cps for 60 minutes using a Fritsch planetary ball mill, the ethanol was evaporated at 110 ° C in an oven, the beads were separated, placed in an alumina crucible, and placed in an electric furnace at 1000 ° C for 5 minutes. The mixture was calcined for a time, crushed again in a planetary ball mill, and further dried to obtain a powder. When the crystal structure of this powder was examined by powder X-ray diffraction, it was confirmed that the powder was a mixed phase composed of an In ₂ O ₃ -Y ₂ O ₃ solid solution, an In ₂ O ₃ phase, a Y ₂ O ₃ phase and a SnO ₂ phase. I understood. Furthermore, when the chemical composition of this powder was analyzed by the inductively coupled plasma (ICP) method, it almost matched the weighed composition.
It was confirmed that powder of the composition for a transparent conductive material of the present invention could be produced.

Example 2 2 g of the powder prepared in Example 1 was filled in a stainless steel mold having a diameter of 20 mmφ, a push rod was inserted, and a uniaxial pressing machine was used.
Molding was performed under a pressure of 100 kg / cm ² . Next, the molded body was placed in a plastic bag, the air in the plastic bag was evacuated and sealed by a vacuum packing device, and the compact was densified by applying a pressure of 2000 kg / cm 2 by a hydrostatic press made by Kobe Steel. The sintered body was fired in an air at 1500 ° C. for 20 hours in an electric furnace to obtain a sintered body. The sintered body was polished on a # 400 diamond polishing machine to obtain a target having a clean surface. Examination of the crystal structure of this target by powder X-ray diffraction revealed that In ₂ O ₃ -Y ₂ O ₃ -Sn
It became clear that the mixed phase was a mixture of the O ₂ solid solution phase and a small amount of the SnO ₂ phase. Furthermore, when the chemical composition of this sintered body was analyzed by the ICP method, the In ₂ O ₃ component was reduced by 5% compared to the weighed composition, but the target composed of the composition for a transparent conductive material of the present invention was used. It was confirmed that was formed.

Example 3 The target prepared in Example 2 was replaced with Nippon Vacuum Engineering Co., Ltd.
Laser ablation device. Next, a KrF excimer laser device manufactured by Lambda Physics
A laser beam of 0 mJ was emitted at a frequency of 5 Hz, and was irradiated on a target in a laser ablation apparatus, thereby depositing a thin film on the opposite glass substrate. The deposition time was 30 minutes, the substrate temperature was 400 ° C., and the oxygen pressure was 1 Pa. When the crystallinity of the obtained thin film was examined by a thin film X-ray diffraction method, In ₂ O ₃ -Y ₂ O
It was found to have an almost single phase of ₃ -SnO ₂ . Furthermore, when the chemical composition of this thin film was analyzed by ICP method, In:
Y = 5: 5 (x = 0.5), it is clear that the content (α) of SnO ₂ with respect to In ₂ O ₃ -Y ₂ O ₃ is 4 wt%, the transparent conductive thin film of the present invention It was confirmed that it was obtained. The thickness of the thin film was measured by a tactile step-type tally step and was found to be 220 nm. The electrical conductivity measured using a self-made Hall measuring instrument is
The light absorption edge wavelength measured at 40 S / cm by a Hitachi spectroscopic altimeter was 330 nm, and the light transmittance at a wavelength of 400 nm was 8
3%. That is, this thin film was an electrically conductive thin film that was transparent from the visible region to the ultraviolet region of 330 nm.

Example 4 In ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.)
And Y ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.) was prepared in the same manner as in Example 1, except that the molar ratio was 4: 6 or 3: 7. Furthermore, a target was formed in the same manner as in Example 2 using this powder, and further,
A thin film was formed using this target. The light absorption edge wavelength and electric conductivity of the obtained thin film were measured in the same manner as in Example 3. The results are shown in Table 1 together with the results of Example 3.

[0024]

[Table 1]

Example 5 The target (In: Y = 5: 5) prepared in Example 2 was set in a laser ablation device manufactured by Japan Vacuum Engineering Co., Ltd.
Next, a laser beam of 80 mJ was emitted from a lambda physics KrF excimer laser device at a frequency of 5 Hz,
Irradiate the target in the laser ablation device,
Thin films were deposited on opposing glass substrates. The deposition time is
The substrate temperature was room temperature and the oxygen pressure was 1 Pa for 30 minutes. When the crystallinity of the obtained thin film was examined by a thin film X-ray diffraction method, no crystalline peak was observed other than the halo peak of the glass substrate. Then, under the same film forming conditions, a film was formed on an Al metal substrate, cut in the thickness direction using a microtome, and the structure of the film cross section was examined by a transmission electron microscope as a thin piece. No diffraction electron beam showing crystallinity was obtained, indicating that an amorphous film was formed. Next, an EP made by Shimadzu Corporation
The composition distribution in the film was measured using MA C-1 (area resolution: 0.5 μm), and it was found that the film had In, Y, and Sn distributed uniformly. Furthermore, the chemical composition of this thin film was determined by ICP
Analysis, In: Y = 5: 5 (x = 0.5) and I:
The content (α) of SnO ₂ with respect to n ₂ O ₃ -Y ₂ O ₃ was found to be 5 wt%, confirming that the transparent conductive thin film of the present invention was obtained. The thickness of the thin film was measured with a palpable step-meter Taristep and found to be 250 nm. The electrical conductivity measured using a self-made Hall measuring instrument was 15 S / cm, the light absorption edge wavelength measured using a Hitachi spectrophotometer was 320 nm, and the wavelength was 4 nm.
The light transmittance at 00 nm was 80%. That is, this thin film was an electrically conductive thin film that was transparent from the visible region to the ultraviolet region of 320 nm.

Example 6 In ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.)
And Y ₂ O ₃ powder (purity 99.99%, manufactured by Furuuchi Chemical Co., Ltd.) were weighed at a molar ratio of 5: 5, and Sb ₂ O ₅ (purity 99.99%, Furuuchi Chemical 5)
wt%, and added to a polyimide pot having a capacity of 500 ml together with 200 g of YSZ beads having a diameter of 2 mm and 80 ml of ethanol, and stirred at 200 cps for 60 minutes using a Fritsch planetary ball mill. Evaporate the ethanol in an oven at 110 ° C to separate the beads,
It was placed in an alumina crucible, calcined in an electric furnace at 1000 ° C. for 5 hours, crushed again in a planetary ball mill, and further dried to obtain a powder. When the crystal structure of this powder was examined by powder X-ray diffraction method, it was found that a mixed phase composed of an In ₂ O ₃ -Y ₂ O ₃ solid solution, an In ₂ O ₃ phase, a Y ₂ O ₃ phase and a Sb ₂ O ₅ phase was obtained. I found it. Furthermore, when the chemical composition of this powder was analyzed by inductively coupled plasma (ICP) method, it was found that the composition was almost the same as the weighed composition, and it was confirmed that the powder of the composition for a transparent conductive material of the present invention could be produced. .

Example 7 2 g of the powder prepared in Example 6 was filled into a stainless steel mold having a diameter of 20 mmφ, a push rod was inserted, and a uniaxial press was used.
Molding was performed under a pressure of 100 kg / cm ² . Next, the molded body was placed in a plastic bag, the air in the plastic bag was evacuated and sealed with a vacuum packing device, and the compact was densified by applying a pressure of 2000 kg / cm ^{2 with} a hydrostatic press made by Kobe Steel. The sintered body was fired in an air at 1500 ° C. for 20 hours in an electric furnace to obtain a sintered body. The sintered body was polished on a # 400 diamond polishing machine to obtain a target having a clean surface. Examination of the crystal structure of this target by powder X-ray diffraction revealed that In ₂ O ₃ -Y ₂ O ₃ -S
It b ₂ O ₅ solid solution phase in a slight amount of Sb ₂ O ₅ phase is a mixed phase coexist revealed. Furthermore, the chemical composition of this sintered body is
When analyzed by the P method, the In ₂ O ₃
Although the components were reduced by 5%, it was confirmed that a target comprising the composition for a transparent conductive material of the present invention could be formed.

Example 8 The target prepared in Example 7 was used in combination with Japan Vacuum Engineering Co., Ltd.
Laser ablation device. Next, a KrF excimer laser device manufactured by Lambda Physics
A laser beam of 0 mJ was emitted at a frequency of 5 Hz, and was irradiated on a target in a laser ablation apparatus, thereby depositing a thin film on the opposite glass substrate. The deposition time was 30 minutes, the substrate temperature was 400 ° C., and the oxygen pressure was 1 Pa. When the crystallinity of the obtained thin film was examined by a thin film X-ray diffraction method, In ₂ O ₃ -Y ₂ O
It was revealed that ₃ -Sb ₂ O _{5 had} almost a single phase (c-rare earth type crystal structure). Further, when the chemical composition of this thin film was analyzed by ICP method, In: Y = 5: 5 (x = 0.5), and In ₂ O ₃ -Y
The content (α) of Sb ₂ O ₅ with respect to ₂ O ₃ was found to be 5 wt%, confirming that the transparent conductive thin film of the present invention was obtained. The thickness of the thin film was measured with a palpable step-meter Taristep and found to be 210 nm. The electric conductivity measured using a self-made Hall measuring instrument was 32 S / cm, the light absorption edge wavelength measured using a Hitachi spectroscopic altimeter was 330 nm, and the wavelength was 400 n.
The light transmittance at m was 81%. That is, this thin film was an electrically conductive thin film that was transparent from the visible region to the ultraviolet region of 320 nm.

[0029]

Industrial Applicability According to the present invention, a transparent conductive material having transparency over a wide range from the visible region to the ultraviolet region, in particular, capable of transmitting light having a wavelength shorter than 400 nm and exhibiting good conductivity. A thin film can be provided. Further, according to the present invention, a material for forming such a thin film, particularly, a target can be provided.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C23C 14/34 H01B 1/08 5G323 H01B 1/08 13/00 503B 13/00 503 C04B 35/00 ZF Terms (Reference) 4G030 AA12 AA34 AA39 AA42 BA02 BA15 CA01 4G048 AA03 AB02 AC04 AE05 4K029 AA09 BA50 BB07 BB10 BC09 CA01 DB05 DB20 EA01 5G301 CA02 CA22 CA23 CA26 CA30 CD03 CD10 5G307 FA01 FB01 FC09 FC10 5BB 323

Claims (7)

[Claims] 1. The general formula In _2-x Y _x O ₃ + α wt% SnO ₂ (where x is a real number in the range of 0.9 to 1.6, and α is 0 to 15)
Is a real number in the range of). 2. The formula In _2-x Y _x O ₃ + α wt% Sb ₂ O
₅ (where x is a real number in the range of 0.9 to 1.6, α is 0 to 1)
5 is a real number in the range of 5). 3. The thin film according to claim 1, which is crystalline or amorphous. 4. An electrode comprising the thin film according to claim 1. 5. In ₂ O ₃ , Y ₂ O ₃ , SnO ₂ , In
_{At least one of 2} O ₃ —Y ₂ O ₃ solid solution, Y ₂ O ₃ —SnO ₂ solid solution and In ₂ O ₃ —Y ₂ O ₃ —SnO ₂ solid solution
One of the general formulas In _2-x Y _x O ₃ + α wt% SnO ₂ (where x is
Is a real number in the range of 0.9 to 1.6, and α is a real number in the range of 0 to 15). 6. In ₂ O ₃ , Y ₂ O ₃ , Sb ₂ O ₅ , I
At least one of the n ₂ O ₃ —Y ₂ O ₃ solid solution, the Y ₂ O ₃ —Sb ₂ O ₅ solid solution and the In ₂ O ₃ —Y ₂ O ₃ —Sb ₂ O ₅ solid solution is represented by the general formula In _2-x Y _x O ₃ + α wt% Sb ₂ O ₅ (where x is a real number in the range of 0.9 to 1.6, α is 0 to 15)
Which is a real number within the range of). 7. The composition according to claim 5, which is a sintered body and is used as a thin film forming target.