JP2000058886A - Solar cell modulate and fabrication thereof - Google Patents
Solar cell modulate and fabrication thereofInfo
- Publication number
- JP2000058886A JP2000058886A JP10229613A JP22961398A JP2000058886A JP 2000058886 A JP2000058886 A JP 2000058886A JP 10229613 A JP10229613 A JP 10229613A JP 22961398 A JP22961398 A JP 22961398A JP 2000058886 A JP2000058886 A JP 2000058886A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- groove
- amorphous silicon
- silicon layer
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池モジュール
及びその製造方法に関し、特に光電変換素子で形成した
発電部を直列に接続して高電圧を得る場合に適用して有
用なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell module and a method for manufacturing the same, and is particularly useful when applied to a case where a high voltage is obtained by connecting power generation units formed of photoelectric conversion elements in series.
【０００２】[0002]
【従来の技術】太陽電池で所望の電圧を得るためには、
太陽電池素子を直列に複数個接続すれば良い。そこで、
光電変換素子で形成した発電部（太陽電池素子）を複数
個直列に接続して所望の電圧を得るように構成した太陽
電池モジュールが提案されている。2. Description of the Related Art To obtain a desired voltage with a solar cell,
What is necessary is just to connect a plurality of solar cell elements in series. Therefore,
A solar cell module has been proposed in which a plurality of power generation units (solar cell elements) formed of photoelectric conversion elements are connected in series to obtain a desired voltage.
【０００３】図５は従来技術に係る太陽電池モジュール
をその製造方法とともに概念的に示す説明図である。同
図に基づき当該太陽電池モジュール製造方法を説明す
る。FIG. 5 is an explanatory view conceptually showing a conventional solar cell module together with a manufacturing method thereof. The method for manufacturing the solar cell module will be described with reference to FIG.
【０００４】 図５（ａ）に示すように、先ず透光性
基板、例えばガラス基板１の上面の全域に透光性導電膜
を真空蒸着法、プチズマＣＶＤ又はスプレー法により形
成し、その後ガラス基板１の上方からＹＡＧ加工機によ
りレーザ光を照射してレーザスクライブ法によりスクラ
イブライン用の開溝２を形成する。かくして透光性導電
膜で形成される各発電部Ｉ、ＩＩの第１の電極３を形成
する。As shown in FIG. 5A, first, a light-transmitting conductive film is formed on the entire upper surface of a light-transmitting substrate, for example, a glass substrate 1 by a vacuum deposition method, a petit plasma CVD method, or a spray method, and then the glass substrate is formed. A laser beam is irradiated from above Y1 by a YAG processing machine to form a groove 2 for a scribe line by a laser scribe method. Thus, the first electrode 3 of each of the power generation units I and II formed of the translucent conductive film is formed.
【０００５】 図５（ｂ）に示すように、第１の電極
３の上面にプラズマＣＶＤ又はＬＰＣＶＤ法によりＰＮ
又はＰＩＮ接合を有する非単結晶半導体層４を形成す
る。この非単結晶半導体層４は、例えばＰ形半導体−Ｉ
形アモルファス又はセミアモルファスのシリコン半導体
−Ｎ形の微結晶を有する半導体よりなる１つのＰＩＮ接
合を有する非単結晶半導体で好適に形成し得る。As shown in FIG. 5B, a PN is formed on the upper surface of the first electrode 3 by plasma CVD or LPCVD.
Alternatively, the non-single-crystal semiconductor layer 4 having a PIN junction is formed. The non-single-crystal semiconductor layer 4 is made of, for example, a P-type semiconductor-I
It can be suitably formed of a non-single-crystal semiconductor having one PIN junction made of a type amorphous or semi-amorphous silicon semiconductor and a semiconductor having N-type microcrystals.
【０００６】 図５（ｃ）に示すように、再度レーザ
スクライブ法により、開溝２に隣接する位置に非単結晶
半導体層４及び第１の電極３を貫通してガラス基板１迄
達する開溝５を形成する。この場合の開溝４は第１の電
極３の端面よりこの第１の電極３の中央側に位置してい
れば良い。As shown in FIG. 5C, the groove extending through the non-single-crystal semiconductor layer 4 and the first electrode 3 to the glass substrate 1 at a position adjacent to the groove 2 again by the laser scribe method. 5 is formed. In this case, the open groove 4 only needs to be located on the center side of the first electrode 3 from the end face of the first electrode 3.
【０００７】 図５（ｄ）に示すように、非単結晶半
導体層４の上面に第１の電極３と同様の方法で透光性導
電膜を形成するとともに、三回目のレーザスクライブ法
により、各発電部Ｉ、ＩＩの切断分離用の開溝６を形成
する。この結果、第２の電極７が形成される。As shown in FIG. 5D, a light-transmitting conductive film is formed on the upper surface of the non-single-crystal semiconductor layer 4 in the same manner as the first electrode 3, and a third laser scribe method is used. An open groove 6 for cutting and separating the power generating units I and II is formed. As a result, a second electrode 7 is formed.
【０００８】かくして、第１の電極３、非単結晶半導体
層４及び第２の電極７を１ユニットとする発電部Ｉ、Ｉ
Ｉが形成され、図中下方に伸びて隣接する第１の電極３
に電気的に接続される接続部７ａを介して各発電部Ｉ、
ＩＩが直列に接続された太陽電池モジュールが形成され
る。そして、かかる太陽電池モジュールの図中下方から
ガラス基板１及び第１の電極３を介して非単結晶半導体
層４に光が入射することによりこの非単結晶半導体層４
に電圧が発生する。すなわち、非単結晶半導体層４は光
電変換素子として機能し、この光電変換素子を第１の電
極３及び第２の電極７で順次直列に接続する構造となっ
ている。Thus, the power generation units I and I each including the first electrode 3, the non-single-crystal semiconductor layer 4, and the second electrode 7 as one unit.
I is formed, and the first electrode 3 extends downward in the figure and is adjacent to the first electrode 3.
Each power generation unit I, via a connection unit 7a electrically connected to
A solar cell module in which IIs are connected in series is formed. Then, light enters the non-single-crystal semiconductor layer 4 via the glass substrate 1 and the first electrode 3 from below in the figure of the solar cell module, so that the non-single-crystal semiconductor layer 4
Voltage is generated. That is, the non-single-crystal semiconductor layer 4 functions as a photoelectric conversion element, and has a structure in which the photoelectric conversion elements are sequentially connected in series by the first electrode 3 and the second electrode 7.
【０００９】[0009]
【発明が解決しようとする課題】上述の如き従来技術に
かかる太陽電池モジュールの製造方法によれば、開溝
２、５、６をそれぞれ形成するため、３回も個別にレー
ザスクライブを行う行う必要があり、工程数の増大に伴
う製造コストの高騰を招来するという問題を有してい
る。ちなみに、開溝２、５、６は発電部Ｉ、ＩＩを分離
するとともに、直列に接続するための必須の構成要件で
ある。According to the method of manufacturing a solar cell module according to the prior art as described above, it is necessary to perform laser scribe three times individually in order to form the grooves 2, 5, and 6, respectively. However, there is a problem that the production cost is increased due to the increase in the number of steps. Incidentally, the grooves 2, 5, and 6 are essential components for separating the power generation units I and II and connecting them in series.
【００１０】本願発明は、上記従来技術に鑑み、光電変
換素子からなる発電部を直列に接続した太陽電池モジュ
ールを製造するに際し、この製造工程の合理化を実現で
き、製造コストの低減化にも寄与し得る太陽電池モジュ
ール及びその製造方法を提供することを目的とする。[0010] In view of the above prior art, the present invention can realize a streamlining of the manufacturing process when manufacturing a solar cell module in which power generation units composed of photoelectric conversion elements are connected in series, and also contribute to a reduction in manufacturing cost. It is an object of the present invention to provide a solar cell module and a method of manufacturing the same.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成する本発
明の構成は次の点を特徴とする。The structure of the present invention that achieves the above object has the following features.
【００１２】１） 透光性の絶縁基板、透光性導電膜か
らなる第１の電極及び非晶質シリコン層をこの順序で積
層して形成した素材に、非晶質シリコン層及び第１の電
極を貫通して絶縁基板に達する第１の開溝と非晶質シリ
コン層を貫通して第１の電極に達する第２及び第３の開
溝とを１組とする複数組の開溝を形成し、さらに第１の
開溝及び第３の開溝に絶縁材を充填して絶縁部を形成す
るとともに、第１の開溝に充填された絶縁部の上面に接
触し、同時に第２の開溝を充填する接続部を有する電極
を形成し、隣接する第３の開溝で分割されるブロックを
１ユニットとする発電部を電極の接続部で複数個直列に
接続して構成したこと。1) A material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and an amorphous silicon layer in this order is provided with an amorphous silicon layer and a first electrode. A plurality of sets of grooves including a first groove reaching the insulating substrate through the electrode and second and third grooves reaching the first electrode through the amorphous silicon layer are formed. Forming an insulating material by filling the first groove and the third groove with an insulating material; and contacting the upper surface of the insulating portion filled in the first groove, and simultaneously forming the second groove. An electrode having a connection portion filling the groove is formed, and a plurality of power generation units each including a block divided by an adjacent third groove as one unit are connected in series at the electrode connection portion.
【００１３】本発明によれば、絶縁基板及び第１の電極
を介して非晶質シリコン層に光が入射した場合、各ユニ
ット毎の非晶質シリコン層に電圧を発生するが、隣接す
るユニット間は電極の接続部を介して接続してあるの
で、各ユニットが直列に接続される。According to the present invention, when light is incident on the amorphous silicon layer through the insulating substrate and the first electrode, a voltage is generated in the amorphous silicon layer of each unit. The units are connected via the connecting portions of the electrodes, so that the units are connected in series.
【００１４】２） 透光性の絶縁基板、透光性導電膜か
らなる第１の電極及び非晶質シリコン層をこの順序で積
層して形成した素材の非晶質シリコン層に向けて垂直に
３本のレーザ光を照射することにより、非晶質シリコン
層及び第１の電極を貫通して絶縁基板に達する第１の開
溝と、非晶質シリコン層を貫通して第１の電極に達する
第２の開溝及び第３の開溝との３個の開溝を同時に形成
するとともに、これら第１〜第３の開溝を１組とする複
数組の開溝を形成する工程と、第１の開溝及び第３の開
溝に絶縁材を充填して絶縁部を形成する工程と、隣接す
る第３の開溝に充填された絶縁部間で非晶質シリコン層
及び第１の開溝に充填された絶縁部の上面に導電部材を
塗布して第２の開溝を充填する接続部を有する電極を形
成する工程とを有することを特徴とする太陽電池モジュ
ールの製造方法。2) A light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and an amorphous silicon layer are stacked in this order, vertically toward a material amorphous silicon layer. By irradiating three laser beams, a first groove extending through the amorphous silicon layer and the first electrode to reach the insulating substrate and a first groove extending through the amorphous silicon layer to the first electrode are formed. Simultaneously forming three grooves, a second groove and a third groove, and forming a plurality of sets of grooves including the first to third grooves as a set; A step of filling the first groove and the third groove with an insulating material to form an insulating portion; and a step of forming an amorphous silicon layer and a first layer between the insulating portions filled in the adjacent third groove. Applying a conductive member to the upper surface of the insulating portion filled in the groove to form an electrode having a connection portion filling the second groove. A method for manufacturing a solar cell module.
【００１５】本発明によれば、隣接する第３の開溝間
に、これに充填する絶縁材で形成した絶縁部により区切
られるユニットを形成するとともに、それぞれ独立の発
電部となる各ユニットは電極の接続部で接続することが
でき、しかもこのようにユニットに分割するための３
個、１組の開口は同時に加工・形成する。According to the present invention, between adjacent third grooves, units separated by an insulating portion formed of an insulating material to be filled therein are formed, and each unit serving as an independent power generating unit is provided with an electrode. The connection part can be connected by the connecting part of
Individually, a set of openings are simultaneously processed and formed.
【００１６】３） 透光性の絶縁基板、透光性導電膜か
らなる第１の電極、非晶質シリコン層及び第２の電極を
この順序で積層して形成した素材に、第２の電極、非晶
質シリコン層及び第１の電極を貫通して絶縁基板に達す
る第１の開溝と第２の電極及び非晶質シリコン層を貫通
して第１の電極に達する第２及び第３の開溝とを１組と
する複数組の開溝を形成し、さらに第１の開溝及び第３
の開溝に絶縁材を充填して絶縁部を形成するとともに、
第２の電極及び第１の開溝に充填された絶縁部の上面に
接触し、同時に第２の開溝を充填する接続部を有する電
極を形成し、隣接する第３の開溝で分割されるブロック
を１ユニットとする発電部を電極の接続部で複数個直列
に接続して構成したこと。3) A second electrode is formed on a material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode in this order. A first groove reaching the insulating substrate through the amorphous silicon layer and the first electrode, and a second groove and a third groove reaching the first electrode through the second electrode and the amorphous silicon layer. And a plurality of sets of grooves including a first groove and a third groove.
Filling the groove with insulating material to form an insulating part,
An electrode having a connecting portion that contacts the second electrode and the insulating portion filled in the first groove and simultaneously fills the second groove is formed, and is divided by an adjacent third groove. And a plurality of power generating units each having one block as a unit are connected in series at the electrode connecting unit.
【００１７】本発明によれば、絶縁基板及び第１の電極
を介して非晶質シリコン層に光が入射した場合、各ユニ
ット毎の非晶質シリコン層に電圧を発生するが、隣接す
るユニット間は電極の接続部を介して接続してあるの
で、各ユニットが直列に接続される。ここで第２の電極
は、非晶質シリコン層と電極の境界面での透過光の乱反
射の防止と、電極で反射し非晶質シリコン層に再吸収さ
れる反射光の屈折率の調整を行う。According to the present invention, when light enters the amorphous silicon layer via the insulating substrate and the first electrode, a voltage is generated in the amorphous silicon layer of each unit, but the voltage is generated in the adjacent unit. The units are connected via the connecting portions of the electrodes, so that the units are connected in series. Here, the second electrode prevents irregular reflection of transmitted light at the interface between the amorphous silicon layer and the electrode, and adjusts the refractive index of reflected light reflected by the electrode and re-absorbed by the amorphous silicon layer. Do.
【００１８】４） 透光性の絶縁基板、透光性導電膜か
らなる第１の電極、非晶質シリコン層及び第２の電極を
この順序で積層して形成した素材の第２の電極に向けて
垂直に３本のレーザ光を照射することにより、第２の電
極、非晶質シリコン層及び第１の電極を貫通して絶縁基
板に達する第１の開溝と、第２の電極及び非晶質シリコ
ン層を貫通して第１の電極に達する第２の開溝及び第３
の開溝との３個の開溝を同時に形成するとともに、これ
ら第１〜第３の開溝を１組とする複数組の開溝を形成す
る工程と、第１の開溝及び第３の開溝に絶縁材を充填し
て絶縁部を形成する工程と、隣接する第３の開溝に充填
された絶縁部間で第２の電極及び第１の開溝に充填され
た絶縁部の上面に導電部材を塗布して第２の開溝を充填
する接続部を有する電極を形成する工程とを有するこ
と。4) A second electrode of a material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode in this order. By irradiating three laser beams vertically toward the first electrode, the first groove reaching the insulating substrate through the second electrode, the amorphous silicon layer, and the first electrode; A second groove extending through the amorphous silicon layer and reaching the first electrode;
Simultaneously forming three grooves with the first groove, forming a plurality of sets of grooves including the first to third grooves as one set, and forming a first groove and a third groove. A step of forming an insulating portion by filling the groove with an insulating material; and an upper surface of the second electrode and the insulating portion filled in the first groove between the adjacent third groove-filled insulating portions. Forming an electrode having a connection portion that fills the second groove by applying a conductive member to the substrate.
【００１９】本発明によれば、隣接する第３の開溝間
に、これに充填する絶縁材で形成した絶縁部により区切
られるユニットを形成するとともに、それぞれ独立の発
電部となる各ユニットは電極の接続部で接続することが
でき、しかもこのようにユニットに分割するための３
個、１組の開口は同時に加工・形成する。ここで第２の
電極は、非晶質シリコン層と電極の境界面での透過光の
乱反射の防止と、電極で反射し非晶質シリコン層に再吸
収される反射光の屈折率の調整を行う。According to the present invention, between adjacent third grooves, units separated by an insulating portion formed of an insulating material to be filled therein are formed, and each unit serving as an independent power generating unit is provided with an electrode. The connection part can be connected by the connecting part of
Individually, a set of openings are simultaneously processed and formed. Here, the second electrode prevents irregular reflection of transmitted light at the interface between the amorphous silicon layer and the electrode, and adjusts the refractive index of reflected light reflected by the electrode and re-absorbed by the amorphous silicon layer. Do.
【００２０】[0020]
【発明の実施の形態】以下本発明の実施の形態を図面に
基づき詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００２１】図１は本願発明の実施の形態に係る太陽電
池モジュールをその製造方法とともに概念的に示す説明
図である。同図に基づき当該太陽電池モジュール製造方
法を説明する。FIG. 1 is an explanatory view conceptually showing a solar cell module according to an embodiment of the present invention together with a method of manufacturing the solar cell module. The method for manufacturing the solar cell module will be described with reference to FIG.
【００２２】 図１（ａ）に示すように、ガラス又は
透明樹脂等からなる透光性の絶縁基板１１の表面に熱Ｃ
ＶＤ法又は蒸着法により透光性導電膜である第１の電極
（ＴＣＯ膜）１２を形成するとともに、この第１の電極
１２の表面にプラズマＣＶＤ法でＰ−Ｉ−Ｎ ａ−Ｓｉ
（アモルファスシリコン）膜である非晶質シリコン層１
３を形成し、さらにこの非晶質シリコン層１３の表面に
イオンプレーティング法又は蒸着法により透光性導電膜
である第２の電極（ＩＴＯ膜）１４を形成してこれを素
材とする。As shown in FIG. 1A, heat C is applied to the surface of a light-transmitting insulating substrate 11 made of glass, transparent resin, or the like.
A first electrode (TCO film) 12, which is a light-transmitting conductive film, is formed by a VD method or an evaporation method, and PINa-Si-Si is formed on the surface of the first electrode 12 by a plasma CVD method.
Amorphous silicon layer 1 as (amorphous silicon) film
3 is formed, and a second electrode (ITO film) 14 which is a light-transmitting conductive film is formed on the surface of the amorphous silicon layer 13 by an ion plating method or a vapor deposition method.
【００２３】 図１（ｂ）に示すように、ＹＡＧレー
ザ１５から水平に照射するレーザ光を３個の反射板１６
ａ、１６ｂ、１６ｃでそれぞれ垂直下方に反射して第２
の電極１４に向け照射することにより３個の開溝１７、
１８、１９を同時に形成する。すなわち、レーザースク
ライブ法により３個の開溝１７、１８、１９を形成す
る。このとき、開溝１７は第２の電極１４、非晶質シリ
コン層１３及び第１の電極１２を貫通して絶縁基板１１
に達する迄の深さ、開溝１８、１９は第２の電極１４、
及び非晶質シリコン層１３を貫通して第１の電極１２に
達する迄の深さとする。かかる第１〜第３の開溝１７〜
１９は、これを１組として複数組形成する。この組数で
後述する発電部Ｉ、ＩＩ・・・の数が決まる。As shown in FIG. 1B, a laser beam irradiated horizontally from a YAG laser 15 is applied to three reflecting plates 16.
a, 16b, and 16c, each of which reflects vertically downward and
Irradiation toward the electrodes 14 of the three grooves 17,
18 and 19 are formed simultaneously. That is, three grooves 17, 18, and 19 are formed by the laser scribe method. At this time, the groove 17 penetrates through the second electrode 14, the amorphous silicon layer 13 and the first electrode 12 to form the insulating substrate 11.
, The grooves 18 and 19 are the second electrodes 14 and
And a depth that penetrates the amorphous silicon layer 13 and reaches the first electrode 12. Such first to third grooves 17 to
19 forms a plurality of sets as one set. The number of power generation units I, II,...
【００２４】 図１（ｃ）に示すように、第２の電極
１４の上面に樹脂系の絶縁材を印刷により塗布して開溝
１７、１９にこの絶縁材を充填することにより、第２の
電極１４の表面に当接する鍔部２０ａ、２１ａを有する
絶縁部２０、２１を形成する。As shown in FIG. 1C, a resin-based insulating material is applied on the upper surface of the second electrode 14 by printing, and the grooves 17 and 19 are filled with the insulating material. The insulating portions 20 and 21 having the flange portions 20a and 21a that are in contact with the surface of the electrode 14 are formed.
【００２５】 図１（ｄ）に示すように、隣接する絶
縁部２１間で第２の電極１４及び絶縁部２０の上面にＡ
Ｉ（アルミ）膜を印刷により塗布して成膜し、開溝１８
を充填する接続部２２ａを有するＡＩ電極２２を形成す
る。As shown in FIG. 1D, the upper surface of the second electrode 14 and the insulating portion 20 is placed between adjacent insulating portions 21.
An I (aluminum) film is applied by printing to form a film.
An AI electrode 22 having a connection portion 22a for filling is formed.
【００２６】かくして、図中左側の絶縁部２１とこの絶
縁部２１の右側で隣接する絶縁部２０との間に、第１の
電極１２、非晶質シリコン層１３、第２の電極１４及び
ＡＩ電極２２を１ユニットとする発電部ＩＩＩ、ＩＶが
形成され、図中下方に伸びて隣接するユニットの第１の
電極１２に電気的に接続される接続部２２ａを介して各
発電部ＩＩＩ、ＩＶが直列に接続された太陽電池モジュ
ールが形成される。Thus, the first electrode 12, the amorphous silicon layer 13, the second electrode 14, and the AI are located between the insulating portion 21 on the left side of the drawing and the insulating portion 20 adjacent to the right side of the insulating portion 21. The power generating units III and IV each having the electrode 22 as one unit are formed, and each of the power generating units III and IV extends downward in the drawing and is electrically connected to the first electrode 12 of the adjacent unit. Are connected in series to form a solar cell module.
【００２７】かかる太陽電池モジュールの図中下方から
絶縁基板１１及び第１の電極１２を介して非晶質シリコ
ン層１３に光が入射することによりこの非晶質シリコン
層１３に電圧が発生する。すなわち、非晶質シリコン層
１３は光電変換素子として機能し、この光電変換素子を
ＡＩ電極２２の接続部２２ａを介して隣接するユニット
の第１の電極１２と順次直列に接続する構造となってい
る。ここで、絶縁部２０とこれに図中右側で隣接する絶
縁部２１との間の非晶質シリコン層１３はこの部分に接
触する第１の電極１２と第２の電極１４とが接続部２２
ａで短絡されているので、光電変換素子としては機能し
ない。光電変換素子として機能するのは絶縁部２１とこ
れに図中右側で隣接する絶縁部２０との間の非晶質シリ
コン層１３である。そこで、非晶質シリコン層１３中、
光電変換素子として機能する部分の面積を、そうでない
部分の面積に較べ可及的に大きく形成することが発電効
率を良好に確保する上で肝要である。ちなみに、図中の
幅ｔ1 、ｔ2 は、例えば１ｍｍで合計２ｍｍであるのに
対し、幅ｔ8 は５ｍｍ〜１１ｍｍとしてある。他の部分
の幅の一例を挙げると次の通りである。ｔ3 ＝４ｍｍ〜
１０ｍｍ、ｔ4 ＝６ｍｍ〜１２ｍｍ、ｔ5 ＝０．３ｍ
ｍ、ｔ6 ＝０．３ｍｍ、ｔ7 ＝０．７ｍｍである。Light is incident on the amorphous silicon layer 13 through the insulating substrate 11 and the first electrode 12 from below in the figure of the solar cell module, and a voltage is generated in the amorphous silicon layer 13. That is, the amorphous silicon layer 13 functions as a photoelectric conversion element, and has a structure in which this photoelectric conversion element is sequentially connected in series with the first electrode 12 of the adjacent unit via the connection portion 22a of the AI electrode 22. I have. Here, the amorphous silicon layer 13 between the insulating part 20 and the insulating part 21 adjacent to the insulating part 20 on the right side in the figure is formed by connecting the first electrode 12 and the second electrode 14 in contact with this part to the connecting part 22.
Since it is short-circuited at a, it does not function as a photoelectric conversion element. The function of the photoelectric conversion element is the amorphous silicon layer 13 between the insulating portion 21 and the insulating portion 20 adjacent to the insulating portion 21 on the right side in the drawing. Therefore, in the amorphous silicon layer 13,
It is important to ensure that the area that functions as a photoelectric conversion element is as large as possible in comparison with the area of the part that does not function in order to ensure good power generation efficiency. Incidentally, the widths t 1 and t 2 in the figure are, for example, 1 mm, which is 2 mm in total, while the width t 8 is 5 mm to 11 mm. An example of the width of the other portion is as follows. t 3 = 4mm ~
10 mm, t 4 = 6 mm to 12 mm, t 5 = 0.3 m
m, t 6 = 0.3 mm and t 7 = 0.7 mm.
【００２８】なお、上記実施の形態においては第２の電
極１４を設けたが、原理的には、ＡＩ電極２２があれば
第２の電極１４は必ずしも必要ではない。ただ、上記実
施の形態の如く第２の電極１４を設けた場合には次の作
用・効果を得ることができる。Although the second electrode 14 is provided in the above embodiment, the second electrode 14 is not necessarily required in principle if the AI electrode 22 is provided. However, when the second electrode 14 is provided as in the above embodiment, the following operation / effect can be obtained.
【００２９】 非晶質シリコン層１３とＡＩ電極２２
の境界面での透過光乱反射の防止とＡＩ電極２２で反射
し非晶質シリコン層（ｎ層）１３に再吸収される反射光
の屈折率の調整を行うことができる。 第２の電極１４がない場合、非晶質シリコン層（ｎ
層）１３とＡＩ電極２２の接触面の馴染みが悪くなる
が、第２の電極（ＩＴＯ膜）１４を設けることにより両
者の密着性を向上させることができる。 ＡＩ電極２２の非晶質シリコン層１３への拡散（溶
け込み）を防止することができる。The amorphous silicon layer 13 and the AI electrode 22
Can be prevented, and the refractive index of reflected light reflected by the AI electrode 22 and re-absorbed by the amorphous silicon layer (n-layer) 13 can be adjusted. When there is no second electrode 14, the amorphous silicon layer (n
Although the familiarity of the contact surface between the layer 13 and the AI electrode 22 becomes poor, the provision of the second electrode (ITO film) 14 can improve the adhesion between them. The diffusion (dissolution) of the AI electrode 22 into the amorphous silicon layer 13 can be prevented.
【００３０】ここで、レーザスクライブ法による第１〜
第３の開溝１７、１８、１９の形成方法に関する具体的
な実施例を説明しておく。第１の開溝１７は、非晶質シ
リコン層（ａ−Si）１３／第１の電極（ＴＣＯ）１２の
二層、又は第２の電極（ＩＴＯ）１４／非晶質シリコン
層（ａ−Si）１３／第１の電極（ＴＣＯ）１２の三層の
エッチングである。この場合、第２の電極（ＩＴＯ）１
４は０．０８μ以下と薄いため、ＹＡＧレーザ１５の加
工条件はどちらもほとんど同様でレーザパワー密度１．
０〜１．８×１０5 Ｗ／cm3 、加工溝幅２０〜５０μｍ
となるようなビームを使用する。本実施例ではレーザパ
ワー密度１．４×１０5 Ｗ／cm3 、加工溝幅４０μｍ、
平均パワー５Ｗで加工した。一方、第２及び第３の開溝
１８、１９は非晶質シリコン層（ａ−Si）１３の一層、
又は第２の電極（ＩＴＯ）１４／非晶質シリコン層（ａ
−Si）１３の二層のエッチングである。この場合も加工
条件はどちらもほとんど同様で、レーザパワー密度１．
０〜１．４×１０4 Ｗ／cm 3 ，加工溝幅５０〜１００μ
ｍとなるようなビームを使用する。本実施例ではレーザ
パワー密度１．２×１０4 Ｗ／cm3 ，加工溝幅６０μ
ｍ，平均パワー２Ｗで加工した。このような２種類のビ
ームを使用して開溝１７、１８、１９の３本で１組とし
て直列段数分の加工を行う。Here, the first to fourth laser scribe methods are used.
Specific about the method of forming the third grooves 17, 18, 19
Examples will be described. The first groove 17 has an amorphous silicon
Recon layer (a-Si) 13 / first electrode (TCO) 12
Double layer or second electrode (ITO) 14 / amorphous silicon
Layer (a-Si) 13 / first electrode (TCO) 12
Etching. In this case, the second electrode (ITO) 1
4 is as thin as 0.08 μm or less.
The processing conditions are almost the same for both, and the laser power density is 1.
0 to 1.8 × 10FiveW / cmThree, Processing groove width 20 ~ 50μm
Use a beam such that In this embodiment, the laser
Power density 1.4 × 10FiveW / cmThree, Processing groove width 40μm,
Processing was performed at an average power of 5 W. On the other hand, the second and third grooves
18 and 19 are layers of the amorphous silicon layer (a-Si) 13;
Alternatively, the second electrode (ITO) 14 / amorphous silicon layer (a
-Si) 13 two-layer etching. Processing in this case as well
The conditions were almost the same in both cases.
0 to 1.4 × 10FourW / cm Three, Processing groove width 50-100μ
m is used. In this embodiment, the laser
Power density 1.2 × 10FourW / cmThree, Machining groove width 60μ
m, average power 2W. Two types of such
Using grooves, three sets of grooves 17, 18, and 19 form one set.
To perform processing for the number of series stages.
【００３１】開溝１７、１８、１９の加工に際し、最も
技術的に簡単な方法は３つの開溝１７、１８、１９を同
時に加工するのではなく、ガラス基板上に非晶質シリコ
ン層（ａ−Si）１３／第１の電極（ＴＣＯ）１２の二
層、又は第２の電極（ＩＴＯ）１４／非晶質シリコン層
（ａ−Si）１３／第１の電極（ＴＣＯ）の三層を形成し
た後、第一のビームで開溝１７を加工後、次に第二のビ
ームで開溝１８を、続いて開溝１９を加工する方法であ
る。この場合でも従来のように、透明導電膜形成後に開
溝２を加工し、非結晶半導体膜形成後に開溝５を加工
後、第二の電極形成後に開溝６を加工する方法より加工
のための基板のハンドリングや位置合せの回数が１回で
すみ時間短縮が図れるという利点があるが、次の様な方
法によれば同時に３つの開溝１７、１８、１９を形成す
ることができる。In processing the grooves 17, 18, and 19, the most technically simple method is not to simultaneously process the three grooves 17, 18, and 19, but to form an amorphous silicon layer (a) on a glass substrate. (Si) 13 / first electrode (TCO) 12 or three layers of second electrode (ITO) 14 / amorphous silicon layer (a-Si) 13 / first electrode (TCO). After the formation, the groove 17 is processed by the first beam, then the groove 18 is processed by the second beam, and then the groove 19 is processed. Even in this case, as in the conventional method, the grooves 2 are formed after the formation of the transparent conductive film, the grooves 5 are formed after the formation of the amorphous semiconductor film, and the grooves 6 are formed after the formation of the second electrode. Although there is an advantage that the number of times of handling and positioning of the substrate can be reduced to one and the time can be reduced, three grooves 17, 18, and 19 can be simultaneously formed by the following method.
【００３２】上述の図１（ｂ）の反射膜１６ａ，１６
ｂ，１６ｃは概念的なものである。実際には例えば図２
に示すような光学系を用いる。同図に示すように、ＹＡ
Ｇレーザ１５の場合、１／２波長板２３と偏光ビームス
プリッタ２４を組み合わせることで偏光特性を利用した
光量の分配が可能であり、１／２波長板２３の回転角を
調整することで分配比を可変できる。１０ＷのＹＡＧレ
ーザ光を１／２波長板２３と偏光ビームスプリッタ２４
で２つのビームを分岐する。かくして開溝１７を加工す
るために第一のビームを加工対物レンズ３１に５Ｗ供給
し、残りの５Ｗをビームエキスパンダ２５に導入するこ
とでビーム径を大きくし、１／２波長板２６と偏光ビー
ムスプリッタ２７でビームをさらに２分岐する。必要光
量４Ｗを１／２波長板２８と偏光ビームスプリッタ２９
に導き、第二のビーム２Ｗを加工対物レンズ３２へ、第
三のビーム２Ｗを全反射ミラー３０を介して加工対物レ
ンズ３３に供給する。以上の方法で３分岐のビームが得
られるが、３つの加工対物レンズ３１、３２、３３を用
いるとレンズ径（数cm）の制約から相互のビーム間隔が
広くなってしまう。開溝１７，１８，１９の相互の間隔
ｔ1 ，ｔ2 は通常それぞれ６０〜２００μｍ程度である
ので、図３に示すようなレンズ配置で加工することにな
る。The reflection films 16a and 16 shown in FIG.
b and 16c are conceptual. Actually, for example, FIG.
The optical system shown in FIG. As shown in FIG.
In the case of the G laser 15, it is possible to distribute the amount of light using the polarization characteristics by combining the half-wave plate 23 and the polarization beam splitter 24, and to adjust the distribution ratio by adjusting the rotation angle of the half-wave plate 23. Can be changed. A 10 W YAG laser beam is supplied to a half-wave plate 23 and a polarizing beam splitter 24.
Splits the two beams. Thus, in order to process the groove 17, the first beam is supplied to the processing objective lens 5W, and the remaining 5W is introduced into the beam expander 25 to increase the beam diameter. The beam is further split into two beams by the beam splitter 27. The required amount of light of 4 W is converted into a half-wave plate 28 and a polarizing beam splitter 29.
The second beam 2W is supplied to the processing objective lens 32, and the third beam 2W is supplied to the processing objective lens 33 via the total reflection mirror 30. Although a three-branch beam can be obtained by the above method, if three processing objective lenses 31, 32, and 33 are used, the mutual beam interval becomes wide due to the restriction of the lens diameter (several cm). Since the mutual intervals t 1 and t 2 of the open grooves 17, 18 and 19 are usually about 60 to 200 μm, the processing is performed with the lens arrangement as shown in FIG.
【００３３】上述の図２に示すような光学系は３分岐ビ
ームの光軸調整がやや面倒になる他、加工位置が離れて
いるためＸＹステージが大型になってしまう。かかる問
題を解消すべく１つの加工対物レンズを使用した光学系
を図４に示す。同図に示すように、第一のビームは全反
射ミラー３４、３５を介して加工対物レンズ３６に導か
れる。第二，第三のビームも小さい光学部品を使用する
ことで同一の加工対物レンズ３６に導かれる。この加工
対物レンズ３６は凸レンズで集光し凹レンズで平行光線
にする機能を有し、３本のビーム間隔を開溝を開溝間隔
ｔ1 ，ｔ2 に一致させることができるようになってい
る。In the optical system shown in FIG. 2 described above, the adjustment of the optical axis of the three-branch beam becomes slightly troublesome, and the XY stage becomes large because the processing position is far away. FIG. 4 shows an optical system using one processing objective lens to solve such a problem. As shown in the figure, the first beam is guided to a processing objective lens 36 via total reflection mirrors 34 and 35. The second and third beams are also guided to the same processing objective lens 36 by using small optical components. The processing objective lens 36 has a function of condensing the light with a convex lens and converting the light into a parallel light beam with a concave lens, so that the gap between the three beams can be made to match the gaps t 1 and t 2 . .
【００３４】[0034]
【発明の効果】以上実施の形態とともに詳細に説明した
通り、〔請求項１〕に記載する発明は、透光性の絶縁基
板、透光性導電膜からなる第１の電極及び非晶質シリコ
ン層をこの順序で積層して形成した素材に、非晶質シリ
コン層及び第１の電極を貫通して絶縁基板に達する第１
の開溝と非晶質シリコン層を貫通して第１の電極に達す
る第２及び第３の開溝とを１組とする複数組の開溝を形
成し、さらに第１の開溝及び第３の開溝に絶縁材を充填
して絶縁部を形成するとともに、第１の開溝に充填され
た絶縁部の上面に接触し、同時に第２の開溝を充填する
接続部を有する電極を形成し、隣接する第３の開溝で分
割されるブロックを１ユニットとする発電部を電極の接
続部で複数個直列に接続して構成したので、絶縁基板及
び第１の電極を介して非晶質シリコン層に光が入射した
場合、各ユニット毎の非晶質シリコン層に電圧を発生す
るが、隣接するユニット間は電極の接続部を介して接続
してあるので、各ユニットが直列に接続される。As described in detail with the above embodiments, the invention described in [Claim 1] comprises a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and amorphous silicon. In a material formed by stacking layers in this order, a first material that reaches the insulating substrate through the amorphous silicon layer and the first electrode is provided.
And a plurality of sets of grooves including the first groove and the second and third grooves that penetrate the amorphous silicon layer and reach the first electrode, and further form the first groove and the first groove. An insulating material is formed by filling the groove of the third groove with an insulating material, and an electrode having a connecting portion that contacts the upper surface of the insulating portion filled with the first groove and simultaneously fills the second groove. Since a plurality of power generation units are formed and are connected in series by an electrode connection unit, a plurality of power generation units each including a block divided by an adjacent third groove are formed as a unit. When light is incident on the amorphous silicon layer, a voltage is generated in the amorphous silicon layer of each unit.However, since adjacent units are connected via the connection part of the electrode, each unit is connected in series. Connected.
【００３５】この結果、所望の高電圧を得ることができ
る。As a result, a desired high voltage can be obtained.
【００３６】〔請求項２〕に記載する発明は、透光性の
絶縁基板、透光性導電膜からなる第１の電極及び非晶質
シリコン層をこの順序で積層して形成した素材の非晶質
シリコン層に向けて垂直に３本のレーザ光を照射するこ
とにより、非晶質シリコン層及び第１の電極を貫通して
絶縁基板に達する第１の開溝と、非晶質シリコン層を貫
通して第１の電極に達する第２の開溝及び第３の開溝と
の３個の開溝を同時に形成するとともに、これら第１〜
第３の開溝を１組とする複数組の開溝を形成する工程
と、第１の開溝及び第３の開溝に絶縁材を充填して絶縁
部を形成する工程と、隣接する第３の開溝に充填された
絶縁部間で非晶質シリコン層及び第１の開溝に充填され
た絶縁部の上面に導電部材を塗布して第２の開溝を充填
する接続部を有する電極を形成する工程とを有するの
で、隣接する第３の開溝間に、これに充填する絶縁材で
形成した絶縁部により区切られるユニットを形成すると
ともに、それぞれ独立の発電部となる各ユニットは電極
の接続部で接続することができ、しかもこのようにユニ
ットに分割するための３個、１組の開口は同時に加工・
形成する。According to a second aspect of the present invention, a non-transparent material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and an amorphous silicon layer in this order. A first groove that penetrates the amorphous silicon layer and the first electrode to reach the insulating substrate by vertically irradiating three laser beams toward the amorphous silicon layer; Are formed simultaneously with a second groove and a third groove that penetrate through the first electrode and reach the first electrode.
A step of forming a plurality of sets of grooves including the third groove as one set, a step of filling the first groove and the third groove with an insulating material to form an insulating portion; A connecting portion for applying a conductive member to the upper surface of the amorphous silicon layer and the insulating portion filled in the first groove between the insulating portions filled in the third groove to fill the second groove; And forming a unit between adjacent third grooves by an insulating portion formed of an insulating material filling the third groove. Connections can be made at the electrode connections, and three sets of openings for dividing into units are processed and processed simultaneously.
Form.
【００３７】この結果、各ユニットを区切る３個の開溝
の形成に要する加工時間が従来に較べ格段に低減され、
低廉な製造コストで所望の電圧を発生する太陽電池モジ
ュールを得ることができる。As a result, the processing time required for forming the three grooves separating each unit is significantly reduced as compared with the conventional case.
A solar cell module that generates a desired voltage at a low manufacturing cost can be obtained.
【００３８】〔請求項３〕に記載する発明は、透光性の
絶縁基板、透光性導電膜からなる第１の電極、非晶質シ
リコン層及び第２の電極をこの順序で積層して形成した
素材に、第２の電極、非晶質シリコン層及び第１の電極
を貫通して絶縁基板に達する第１の開溝と第２の電極及
び非晶質シリコン層を貫通して第１の電極に達する第２
及び第３の開溝とを１組とする複数組の開溝を形成し、
さらに第１の開溝及び第３の開溝に絶縁材を充填して絶
縁部を形成するとともに、第２の電極及び第１の開溝に
充填された絶縁部の上面に接触し、同時に第２の開溝を
充填する接続部を有する電極を形成し、隣接する第３の
開溝で分割されるブロックを１ユニットとする発電部を
電極の接続部で複数個直列に接続して構成したので、絶
縁基板及び第１の電極を介して非晶質シリコン層に光が
入射した場合、各ユニット毎の非晶質シリコン層に電圧
を発生するが、隣接するユニット間が電極の接続部を介
して接続され、各ユニットが直列に接続される。According to a third aspect of the present invention, a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode are laminated in this order. In the formed material, a first groove extending through the second electrode, the amorphous silicon layer and the first electrode to reach the insulating substrate, and a first groove extending through the second electrode and the amorphous silicon layer are formed. The second reaches the electrode
And a third set of grooves and one set of grooves,
Further, the first groove and the third groove are filled with an insulating material to form an insulating portion, and the second electrode and the upper surface of the insulating portion filled in the first groove are simultaneously contacted. An electrode having a connecting portion filling the second groove is formed, and a plurality of power generating units each having a block divided by the adjacent third groove as one unit are connected in series at the electrode connecting portion. Therefore, when light is incident on the amorphous silicon layer through the insulating substrate and the first electrode, a voltage is generated in the amorphous silicon layer of each unit. And each unit is connected in series.
【００３９】この結果、所望の高電圧を得ることができ
る。また、本発明は第２の電極を有するので、この第２
の電極で非晶質シリコン層と電極の境界面での透過光の
乱反射の防止と、電極で反射し非晶質シリコン層に再吸
収される反射光の屈折率の調整を行うという効果も奏す
る。As a result, a desired high voltage can be obtained. Since the present invention has the second electrode, the second electrode
The electrode also prevents irregular reflection of transmitted light at the interface between the amorphous silicon layer and the electrode, and also adjusts the refractive index of reflected light reflected by the electrode and reabsorbed by the amorphous silicon layer. .
【００４０】〔請求項４〕に記載する発明は、透光性の
絶縁基板、透光性導電膜からなる第１の電極、非晶質シ
リコン層及び第２の電極をこの順序で積層して形成した
素材の第２の電極に向けて垂直に３本のレーザ光を照射
することにより、第２の電極、非晶質シリコン層及び第
１の電極を貫通して絶縁基板に達する第１の開溝と、第
２の電極及び非晶質シリコン層を貫通して第１の電極に
達する第２の開溝及び第３の開溝との３個の開溝を同時
に形成するとともに、これら第１〜第３の開溝を１組と
する複数組の開溝を形成する工程と、第１の開溝及び第
３の開溝に絶縁材を充填して絶縁部を形成する工程と、
隣接する第３の開溝に充填された絶縁部間で第２の電極
及び第１の開溝に充填された絶縁部の上面に導電部材を
塗布して第２の開溝を充填する接続部を有する電極を形
成する工程とを有するので、隣接する第３の開溝間に、
これに充填する絶縁材で形成した絶縁部により区切られ
るユニットを形成するとともに、それぞれ独立の発電部
となる各ユニットは電極の接続部で接続することがで
き、しかもこのようにユニットに分割するための３個、
１組の開口は同時に加工・形成する。According to a fourth aspect of the present invention, a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode are laminated in this order. By vertically irradiating three laser beams toward the second electrode of the formed material, the first laser reaching the insulating substrate through the second electrode, the amorphous silicon layer and the first electrode is reached. Three grooves, a second groove and a third groove that penetrate the second electrode and the amorphous silicon layer and reach the first electrode, are formed at the same time. A step of forming a plurality of sets of the first to third grooves, and a step of filling the first and third grooves with an insulating material to form an insulating portion;
A connecting part for filling a second groove by applying a conductive member to the upper surface of the second electrode and the insulating part filled in the first groove between adjacent insulating parts filled in the third groove. Forming an electrode having the following formula: between adjacent third grooves.
In addition to forming units separated by an insulating portion formed of an insulating material to be filled therein, each unit serving as an independent power generating unit can be connected at a connection portion of an electrode, and further divided into units like this. Three,
One set of openings is simultaneously processed and formed.
【００４１】この結果、各ユニットを区切る３個の開溝
の形成に要する加工時間が従来に較べ格段に低減され、
低廉な製造コストで所望の電圧を発生する太陽電池モジ
ュールを得ることができる。この場合第２の電極で非晶
質シリコン層と電極の境界面での透過光の乱反射の防止
と、電極で反射し非晶質シリコン層に再吸収される反射
光の屈折率の調整を行うという効果も奏する。As a result, the processing time required for forming the three grooves separating each unit is significantly reduced as compared with the conventional case.
A solar cell module that generates a desired voltage at a low manufacturing cost can be obtained. In this case, irregular reflection of transmitted light at the interface between the amorphous silicon layer and the electrode is prevented by the second electrode, and the refractive index of reflected light reflected by the electrode and re-absorbed by the amorphous silicon layer is adjusted. Also has the effect.
【図１】本発明の実施の形態に係る太陽電池モジュール
の製造工程及びこれにより製造される太陽電池モジュー
ルを概念的に示す説明図である。FIG. 1 is an explanatory view conceptually showing a manufacturing process of a solar cell module according to an embodiment of the present invention and a solar cell module manufactured by the manufacturing process.
【図２】本発明に係る太陽電池モジュールの製造工程に
おけるレーザスクライブ法による開溝の形成方法の第１
の例を示す説明図である。FIG. 2 shows a first method of forming a groove by a laser scribe method in a manufacturing process of a solar cell module according to the present invention.
It is explanatory drawing which shows the example of.
【図３】図２に示す場合のレンズ配置を概念的に示す説
明図である。FIG. 3 is an explanatory view conceptually showing a lens arrangement in the case shown in FIG. 2;
【図４】本発明に係る太陽電池モジュールの製造工程に
おけるレーザスクライブ法による開溝の形成方法の第３
の例を示す説明図である。FIG. 4 shows a third method of forming a groove by a laser scribing method in the manufacturing process of the solar cell module according to the present invention.
It is explanatory drawing which shows the example of.
【図５】従来技術に係る太陽電池モジュールの製造工程
及びこれにより製造される太陽電池モジュールを概念的
に示す説明図である。FIG. 5 is an explanatory view conceptually showing a manufacturing process of a solar cell module according to a conventional technique and a solar cell module manufactured by the same.
１１ 絶縁基板 １２ 第１の電極 １３ 非晶質シリコン層 １４ 第２の電極 １５ ＹＡＧレーザ １６ａ、１６ｂ、１６ｃ 反射板 １７、１８、１９ 開溝 ２０、２１ 絶縁部 ２２ ＡＩ電極 ２２ａ 接続部 DESCRIPTION OF SYMBOLS 11 Insulating substrate 12 1st electrode 13 Amorphous silicon layer 14 2nd electrode 15 YAG laser 16a, 16b, 16c Reflector 17, 18, 19 Groove 20, 21 Insulating part 22 AI electrode 22a Connection part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小川 和彦 長崎県長崎市飽の浦町１番１号 三菱重工 業株式会社長崎造船所内 Ｆターム(参考） 5F051 AA05 DA04 EA02 EA09 EA10 EA11 EA16 FA02 FA03 FA04 FA13 FA15 FA16 FA17 GA03 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazuhiko Ogawa 1-1, Akunouramachi, Nagasaki City, Nagasaki Prefecture Mitsubishi Heavy Industries, Ltd. Nagasaki Shipyard F-term (reference) 5F051 AA05 DA04 EA02 EA09 EA10 EA11 EA16 FA02 FA03 FA04 FA13 FA15 FA16 FA17 GA03
Claims (4)
る第１の電極及び非晶質シリコン層をこの順序で積層し
て形成した素材に、非晶質シリコン層及び第１の電極を
貫通して絶縁基板に達する第１の開溝と非晶質シリコン
層を貫通して第１の電極に達する第２及び第３の開溝と
を１組とする複数組の開溝を形成し、さらに第１の開溝
及び第３の開溝に絶縁材を充填して絶縁部を形成すると
ともに、第１の開溝に充填された絶縁部の上面に接触
し、同時に第２の開溝を充填する接続部を有する電極を
形成し、隣接する第３の開溝で分割されるブロックを１
ユニットとする発電部を電極の接続部で複数個直列に接
続して構成したことを特徴とする太陽電池モジュール。A material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and an amorphous silicon layer in this order is provided with an amorphous silicon layer and a first electrode. A plurality of sets of grooves including a first groove reaching the insulating substrate through the electrode and second and third grooves reaching the first electrode through the amorphous silicon layer are formed. Forming an insulating material by filling the first groove and the third groove with an insulating material; and contacting the upper surface of the insulating portion filled in the first groove, and simultaneously forming the second groove. An electrode having a connection portion filling the groove is formed, and a block divided by an adjacent third groove is formed as one electrode.
A solar cell module, wherein a plurality of power generation units as units are connected in series at electrode connection parts.
る第１の電極及び非晶質シリコン層をこの順序で積層し
て形成した素材の非晶質シリコン層に向けて垂直に３本
のレーザ光を照射することにより、非晶質シリコン層及
び第１の電極を貫通して絶縁基板に達する第１の開溝
と、非晶質シリコン層を貫通して第１の電極に達する第
２の開溝及び第３の開溝との３個の開溝を同時に形成す
るとともに、これら第１〜第３の開溝を１組とする複数
組の開溝を形成する工程と、 第１の開溝及び第３の開溝に絶縁材を充填して絶縁部を
形成する工程と、 隣接する第３の開溝に充填された絶縁部間で非晶質シリ
コン層及び第１の開溝に充填された絶縁部の上面に導電
部材を塗布して第２の開溝を充填する接続部を有する電
極を形成する工程とを有することを特徴とする太陽電池
モジュールの製造方法。2. A light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, and an amorphous silicon layer are stacked in this order, vertically toward the amorphous silicon layer of the material. By irradiating three laser beams, a first groove extending through the amorphous silicon layer and the first electrode to reach the insulating substrate and a first groove extending through the amorphous silicon layer to the first electrode are formed. Simultaneously forming three grooves, a second groove and a third groove, and forming a plurality of sets of grooves including the first to third grooves as a set; A step of filling the first groove and the third groove with an insulating material to form an insulating portion; and forming an amorphous silicon layer and a first layer between the insulating portions filled in the adjacent third groove. Applying a conductive member to the upper surface of the insulating portion filled in the groove to form an electrode having a connection portion filling the second groove. Method of manufacturing a solar cell module, wherein the door.
る第１の電極、非晶質シリコン層及び第２の電極をこの
順序で積層して形成した素材に、第２の電極、非晶質シ
リコン層及び第１の電極を貫通して絶縁基板に達する第
１の開溝と第２の電極及び非晶質シリコン層を貫通して
第１の電極に達する第２及び第３の開溝とを１組とする
複数組の開溝を形成し、さらに第１の開溝及び第３の開
溝に絶縁材を充填して絶縁部を形成するとともに、第２
の電極及び第１の開溝に充填された絶縁部の上面に接触
し、同時に第２の開溝を充填する接続部を有する電極を
形成し、隣接する第３の開溝で分割されるブロックを１
ユニットとする発電部を電極の接続部で複数個直列に接
続して構成したことを特徴とする太陽電池モジュール。3. A second electrode is formed on a material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode in this order. A first groove reaching the insulating substrate through the amorphous silicon layer and the first electrode, and a second groove and a third groove reaching the first electrode through the second electrode and the amorphous silicon layer. And a plurality of sets of grooves, one set of the first groove and the first groove and the third groove being filled with an insulating material to form an insulating portion.
A block which is in contact with the upper surface of the electrode and the insulating portion filled in the first groove, and at the same time has an electrode having a connection portion filling the second groove, and is divided by an adjacent third groove 1
A solar cell module, wherein a plurality of power generation units as units are connected in series at electrode connection parts.
る第１の電極、非晶質シリコン層及び第２の電極をこの
順序で積層して形成した素材の第２の電極に向けて垂直
に３本のレーザ光を照射することにより、第２の電極、
非晶質シリコン層及び第１の電極を貫通して絶縁基板に
達する第１の開溝と、第２の電極及び非晶質シリコン層
を貫通して第１の電極に達する第２の開溝及び第３の開
溝との３個の開溝を同時に形成するとともに、これら第
１〜第３の開溝を１組とする複数組の開溝を形成する工
程と、 第１の開溝及び第３の開溝に絶縁材を充填して絶縁部を
形成する工程と、 隣接する第３の開溝に充填された絶縁部間で第２の電極
及び第１の開溝に充填された絶縁部の上面に導電部材を
塗布して第２の開溝を充填する接続部を有する電極を形
成する工程とを有することを特徴とする太陽電池モジュ
ールの製造方法。4. A second electrode made of a material formed by laminating a light-transmitting insulating substrate, a first electrode made of a light-transmitting conductive film, an amorphous silicon layer, and a second electrode in this order. By irradiating three laser beams vertically toward the second electrode,
A first groove that penetrates the amorphous silicon layer and the first electrode and reaches the insulating substrate, and a second groove that penetrates the second electrode and the amorphous silicon layer and reaches the first electrode And simultaneously forming three grooves with the first and third grooves, and forming a plurality of sets of grooves with the first to third grooves as one set. A step of filling the third groove with an insulating material to form an insulating portion, and an insulating portion filled in the second electrode and the first groove between adjacent insulating portions filled in the third groove. Applying a conductive member to the upper surface of the part to form an electrode having a connection part filling the second groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10229613A JP2000058886A (en) | 1998-08-14 | 1998-08-14 | Solar cell modulate and fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10229613A JP2000058886A (en) | 1998-08-14 | 1998-08-14 | Solar cell modulate and fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000058886A true JP2000058886A (en) | 2000-02-25 |
Family
ID=16894934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10229613A Withdrawn JP2000058886A (en) | 1998-08-14 | 1998-08-14 | Solar cell modulate and fabrication thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000058886A (en) |
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