KR20090080171A - Photoelectric Conversion Module Structure for Increasing the Effective Area of Lihgt Electromotive Force in Intergrated Thin Solar Cell and Manufacturing Method Thereof - Google Patents

Abstract

A photoelectric conversion module structure for increasing an effective area of photoelectro-motive force in an integrated thin solar cell and a manufacturing method thereof are provided to reduce a manufacturing time and an inspection time by reducing a process number of a cutting unit. A photoelectric conversion module structure for increasing an effective area of photoelectro-motive force in an integrated thin solar cell includes a transparent substrate(10), a first transparent electrode layer(20), a first photovoltaic conversion layer(30), an intermediate reflecting layer(50), and a first cutting unit. The first transparent electrode layer is laminated on the transparent substrate. The first transparent electrode layer is formed with a conductor in order to transfer an electrical signal. The first photovoltaic conversion layer is laminated on the first transparent electrode layer. The first photovoltaic conversion layer is formed to generate the photoelectro-motive force. The intermediate reflecting layer is laminated on the first photovoltaic conversion layer. The intermediate reflecting layer is formed to generate the first photoelectro-motive force. The first cutting unit forms a cutting groove.

Description

Photoelectric Conversion Module Structure for Increasing the Effective Area of Lihgt Electromotive Force in Intergrated Thin Solar Cell and Manufacturing Method Thereof}

In accordance with the modularization of the integrated thin film solar cell, the present invention increases the effective area of generation of photovoltaic power around the limited area range as much as possible and reduces the area constituting the circuit of the cell to the minimum area to generate improved photovoltaic power and uses an intermediate reflective layer. The present invention relates to a photoelectric conversion module structure and a related manufacturing method for increasing high conversion efficiency by multilayering.

Generally, a thin film photoelectric conversion module has the structure which connected several thin film photoelectric conversion cells in series with each other on the glass substrate. Each thin film photoelectric conversion cell is formed by stacking a transparent electrode layer, a thin film photoelectric conversion unit and a back electrode layer on a front surface of a glass substrate and sequentially assembling by patterning.

In such a thin film photoelectric conversion module, a technology for improving the photoelectric conversion efficiency has been developed. A tandem structure includes a plurality of thin film photoelectric conversion units having different absorption wavelength bands between the front transparent electrode layer and the back electrode layer. It is laminated and is known to have a structure which makes incident light more effective.

In the hybrid structure, which is a kind of tandem structure, the crystallinity of the photoelectric conversion layer, which is the main part of the thin film photoelectric conversion unit, is different between the thin film photoelectric conversion units.

For example, in the thin film photoelectric conversion module having a hybrid structure, a polysilicon layer having a narrower band gap is used as the photoelectric conversion layer of the thin film photoelectric conversion unit on the light incident side (or the front side), and the thin film photoelectric on the back side is used. As the photoelectric conversion layer of the conversion unit, amorphous silicon having a wider band gap is used in layers.

As a tandem type thin film photoelectric conversion module, there are both a light transmissive and a light reflective property between a plurality of stacked thin film photoelectric conversion units and interpose a conductive intermediate reflective layer.

In the case where the intermediate reflective layer is provided, since the light incident on the photoelectric conversion layer on the front side can be reflected by the intermediate reflective layer, the effective film thickness of the photoelectric conversion layer on the front side is increased. It is possible to increase the output current density of the thin film photoelectric conversion unit.

Therefore, when the intermediate reflective layer is used as the hybrid thin film photoelectric conversion module described above, the thin film photoelectric conversion unit having the amorphous silicon layer and the polysilicon layer are formed while the amorphous silicon layer is sufficiently thin formed with the increase in the film thickness and the light deterioration becomes significant. It is possible to balance the output current density with the thin film photoelectric conversion unit having a layer. That is, it is possible to improve the output characteristic of a module.

Hereinafter, a description will be given of a conventional technology that proposes a technology of such a hybrid thin film photoelectric conversion module.

As can be seen from Japanese Patent Laid-Open Publication No. 2006-313872 (shown in Fig. 1) and Japanese Patent Laid-Open Publication No. 2002-261308 (shown in Figure 2), a photovoltaic conversion module of a module of a thin film solar cell that is commonly used Has a structure of serial connection, and a film is sequentially formed on the transparent (glass) substrate in the order of a transparent electrode layer, a first photoelectric conversion layer, an intermediate reflective layer, a second photoelectric conversion layer, and a back electrode layer.

In FIG. 1, the width of the 50 integrated thin film solar cell is generally about 10 mm, and the widths of 10, 40, 20, and 30 are about 370 μm to 400 μm.

Also, between 10 and 30, photovoltaic power due to light conversion does not occur.

Similarly, in FIG. 2, the widths of 21, 24, 23, and 22 are about 370 μm to about 400 μm, and photovoltaic power due to light conversion does not occur.

Therefore, in FIG. 1, only portions other than 10 to 30 in the area of the 50 integrated thin film solar cell and 10 corresponding to 10 in FIG. 2 generate photovoltaic power.

40 in FIG. 1 and 24 in FIG. 2 are generally referred to as intermediate reflecting layers, and technical differences are described in detail together with various types of drawings in Japanese Patent Laid-Open No. 2006-313872 and Japanese Patent Laid-Open No. 2002-261308.

3 to 11 below, the prior art will be described. In the reference numerals, the front end records reference numerals related to the first embodiment (FIG. 1), and the numbers in parentheses refer to the second embodiment (FIG. 2). The reference numerals related to the description will be recorded.

2 of FIG. 1, a transparent electrode layer is formed on the transparent (glass) substrate as shown in FIG. 2 (FIG. 3 and FIG. 3). TCO forming the transparent electrode layer is transparent and conductive (TCO: Transparent Conductive Oxide).

After the transparent electrode layer is formed, the transparent electrode layer is uniformly cut to have a width of 10 mm and a width of 50 μm as shown in FIG. 4 (10 in FIG. 1 and 21 in FIG. 2).

After cutting between the first cut portions, that is, the transparent electrode layers, the first photovoltaic conversion layer is formed at about 300 nm ± 10% as shown in FIG. 5 (4 in FIG. 1 and 4a in FIG. 2). In this case, a-Si is introduced between the transparent electrode layer cutting paths in which a-Si of the first photovoltaic conversion layer is cut at regular intervals (10 in FIG. 1 and 21 in FIG. 2), and a-Si (Amorphous) between the transparent electrode layer cuttings. Silicon) is formed, and a-Si is an N-layer i-layer P-layer, and three layers are sequentially formed inside the Plasma CVD equipment.

After the formation of the first photovoltaic conversion layer, an intermediate reflective layer film is formed on the first photovoltaic conversion layer as shown in FIG. 6 (5 of FIG. 1 and 5 of FIG. 2). The intermediate reflective layer formed is selected from a material suitable for the role of the intermediate reflective layer as the conductive material (generally, a large amount of conductive material of ZnO is used).

The intermediate reflective layer formed as shown in FIG. 6 cuts the intermediate reflective layer closest to the cut portion of the transparent electrode layer as shown in FIG. 7. It runs between micrometers.

In the prior art, the intermediate reflective layer is 40 of FIG. 1 and 24 of FIG. 2, and the transparent electrode layer is cut of 10 of FIG. 1 and 21 of FIG. 2.

Prior Art As shown in FIGS. 1 and 2, the cutting method of the intermediate reflective layer is different.

In FIG. 1, only the intermediate reflective layer was cut, and in FIG. 2, 24 was cut to the transparent electrode layer.

After cutting the intermediate reflective layer as shown in FIG. 7, the second photovoltaic conversion layer is formed to have a thickness of about 2 μm as shown in FIG. 8 (6 in FIG. 1 and 4B in FIG. 2). In this case, the microcrystalline silicon of the lower cell flows between the second cut portions, so that the inside of the second cut portion is filled with microcrystalline silicon. The microcrystalline silicon is transformed into micro-crystal silicon (uc-si) at the instant when three layers are sequentially formed inside the Plasma CVD apparatus with an N-layer i-layer P-layer (40 in FIG. 1 and 24 in FIG. 2).

The second photovoltaic conversion layer formed in FIG. 8 is cut from the portion closest to the middle reflective layer portion when forming the third cut portion as shown in FIG. 9, and the cut width is 50 μm and the cut interval is the center of the second cut and the third cut. It is about 100 micrometers centering on (20 of FIG. 1, 23 of FIG. 2). Then, the back electrode layer is formed as shown in FIG. 10 (7 in FIG. 1 and 6 in FIG. 2).

In the manufacturing process, after forming the second photovoltaic conversion layer before forming the back electrode layer, a transparent electrode layer is formed between the back electrode layer and the second photovoltaic conversion layer because the first photovoltaic conversion layer uses a short wavelength based on the intermediate reflective layer. The primary photovoltaic power is generated, and the secondary photovoltaic power is generated using the long wavelength in the second photovoltaic conversion layer based on the intermediate reflective layer.

That is, the first transparent electrode layer, the first photovoltaic conversion layer, the intermediate reflective layer, the second photovoltaic conversion layer, and the second transparent electrode layer are formed, and photovoltaic power is generated above and below each layer based on the intermediate reflective layer.

In the process of forming the back electrode layer, a conductive conductor reaches between the third cutting section cutting paths to the transparent electrode layer, thereby forming a connection line connecting the back electrode layer and the transparent electrode layer, and the connection line is short circuited due to the conductive material of the back electrode. The connecting line of is formed (20 of FIG. 1, 23 of FIG. 2).

As shown in FIG. 10, a short-circuit cell formed by a back electrode layer formed as shown in FIG. 10 is formed. As shown in FIG. 11, an independent cell is formed by cutting the fourth cutout portion, and the fourth cut is connected to the connection path made of the third cutout. The cutting width is 50 µm and the cutting interval is about 100 µm with respect to the center of the third and fourth cutting portions. Finally, in order to completely remove impurities and the like between the fourth cutout portions, the fifth cutout is performed by laser processing or other methods (30 in FIG. 1 and 22 in FIG. 2).

FIG. 11 is a cell in which an integrated thin film forming process is completed, and a thin film solar cell capable of generating photovoltaic power by a series connection on a transparent substrate may be modularized to generate photovoltaic power.

However, there is a problem that the light generation efficiency is lowered because the width of the portion where the photovoltaic power is not generated in the photovoltaic device is widened to 370 μm to 400 μm because the interval of each cut portion is separated by a constant width.

As described above, the structure of the related art has been described in the related art, and the inspection, cleaning, cutting part spacing, and width, etc. occurring in the manufacturing process can be more specifically understood by referring to the literature information of the related art. have.

The object of the present invention is to reduce the width (370 μm to 400 μm) of the portion of the photovoltaic device where no photovoltaic power is generated to 150 μm to 170 μm through the present invention, and to cut the transparent electrode. By simultaneously cutting the intermediate reflective layer and the intermediate reflective layer for the multi-layer structure to generate an improved photovoltaic to provide a manufacturing method for a structure that increased the conversion efficiency.

As a means for achieving the above object,

The present invention is a transparent substrate; A first transparent electrode layer laminated on the transparent substrate and made of a conductor to transmit an electrical signal; A first photovoltaic conversion layer stacked on the first transparent electrode layer and generating photovoltaic power; An intermediate reflective layer stacked on top of the first photovoltaic conversion layer and generating a first photovoltaic power by repeating a process of reflecting the short wavelength provided from the sun to the first photovoltaic conversion layer and reflecting back from the first transparent electrode layer; ; The intermediate reflective layer, the first photovoltaic conversion layer and the first transparent electrode layer are cut at a predetermined interval to form a cutting groove to include a first cutting portion to allow various inspection progress of each layer entered through the cutting groove. This is a feature.

In addition, a transparent substrate; A first transparent electrode layer laminated on the transparent substrate and made of a conductor to transmit an electrical signal; A first photovoltaic conversion layer stacked on the first transparent electrode layer and generating photovoltaic power; An intermediate reflection layer stacked on the first photovoltaic conversion layer and generating a first photovoltaic power by repeating a process of reflecting the short wavelength provided from the sun to the first photovoltaic conversion layer and reflecting back from the first transparent electrode layer; A first cutting part which cuts the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove to allow various inspections of each layer entered through the cutting groove; A second photovoltaic conversion layer stacked on the intermediate reflection layer and filling the first cutout portion, and repeating a reflection process to generate a second photovoltaic power when the long wavelength supplied from the sun is reflected through the intermediate reflection layer; Cutting the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cutting the side of the second photovoltaic conversion layer filled next to the first cut portion to check the connection state of the second photovoltaic conversion layer. A second cut portion formed by forming a square groove; The second photovoltaic layer is stacked on top of the second photovoltaic conversion layer and fills the second cutout, and the conductor reaches the first transparent electrode layer to form a connection line to which the first transparent electrode layer is connected so as to be electrically connected. A back electrode layer comprising; Connection of the conductive object forming the back electrode layer introduced into the second cut part by cutting the back electrode layer, the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cutting immediately next to the back electrode layer filled in the second cut part. It is characterized in that it comprises a third cut in the form of a square groove to distinguish the cell and the cell to check the state.

In addition, the bottom surface of the transparent substrate is characterized by further forming a mark (Mark).

In addition, the material of the intermediate reflective layer is characterized by using GZO (ZnO + Ga).

In addition, the material of the second transparent electrode layer is characterized by using GZO (ZnO + Ga).

In addition, as a manufacturing method, preparing a transparent substrate; Stacking a first transparent electrode layer on the transparent substrate; Stacking a first photovoltaic conversion layer on top of the first transparent electrode layer; Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer; And forming a first cutout to cut the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove.

In addition, preparing a transparent substrate; Stacking a first transparent electrode layer on the transparent substrate; Stacking a first photovoltaic conversion layer on top of the first transparent electrode layer; Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer; Forming a first cutout to cut the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove; Stacking a second photovoltaic conversion layer on the intermediate reflective layer while filling the first cutout; Cutting the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cutting a second side of the photovoltaic conversion layer immediately next to the second photovoltaic conversion layer filled in the first cut portion to form a second cut portion having a rectangular groove shape; Stacking a back electrode layer on the second photovoltaic conversion layer and filling the second cutout; A third cut portion having a rectangular groove shape to cut the back electrode layer, the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cut immediately next to the back electrode layer filled in the second cut portion to distinguish between the cells. Characterized in that comprises the step of forming a.

In addition, the cutting region of the second cut portion starts from the central axis of the first cut portion.

In addition, the cutting width of the second cutting part is widened to widen the connection between the first transparent electrode layer and the back electrode layer, and when the third cutting part is formed, the cutting width of the third cutting part is changed to be long or short so that the transparent electrode layer and the back electrode layer are cut. It is characterized by the fact that the width of the connection path can be adjusted.

According to the present invention, it is possible to provide a method for manufacturing an integrated thin film solar cell structure, which reduces manufacturing and inspection time by increasing 0.2% conversion efficiency and reducing cutting times by increasing the photovoltaic generation effective area in the same area.

In addition, although the invention has been described in connection with the preferred embodiments mentioned, other various modifications and variations may be made without departing from the spirit and scope of the invention. Accordingly, it is intended that the appended claims cover such modifications and variations as fall within the true scope of the invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are used as much as possible even if displayed on different drawings. In addition, in the following description of the present invention, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

Fig. 12 is a state in which a mark is formed on the bottom of the transparent substrate in the present invention.

FIG. 13 is a state diagram in which a first transparent electrode layer, a first photovoltaic generation layer, and an intermediate reflection layer are sequentially formed on a transparent substrate in the present invention. FIG.

14 is a state diagram in which a first cut portion is formed in the present invention.

Fig. 15 is a state diagram in which a second photovoltaic generation layer is formed in the present invention.

Fig. 16 is a state diagram in which a second cutout portion is formed in the present invention.

Fig. 17 is a state diagram in which a back electrode layer is formed in the present invention.

18 is a state diagram in which the third cut portion is formed and completed in the present invention;

19 is a first embodiment of the present invention.

20 is a second embodiment of the present invention.

The same position can be always identified in any process by using an ultra-precise tracking device that can always track the same position through the marked mark 130 that tracks the position on the bottom surface of the substrate which forms the transparent electrode layer on the transparent (glass) substrate. In order to be able to do this, the laser processing device and the tracking device should be used.

As shown in FIG. 13, the transparent electrode layer 20, the first photovoltaic conversion layer 30, and the intermediate reflection layer 50 are sequentially formed on the transparent substrate 10. The transparent substrate 10 is selected from a transparent (glass) substrate having a wavelength of 600 nm and a light transmittance of 92% and a wavelength of 900 nm of about 90%. ZnO) 70nm ± 10%, the specific resistance of ZnO is 4-7.5Ω X 10 ^-4 Ωcm and the transmittance of the transparent electrode is formed to be more than 85% 380-800nm. When removing impurities on the surfaces of the transparent substrate 10 and the transparent electrode layer 20, various impurities are removed using a roll brush and high pressure water (0.6 to 0.7 Mpa) using water of 10 MΩ cm or more of ultrapure water.

The first photovoltaic conversion layer 30 is deposited by depositing a-Si into the N-layer i-layer P layer through plasma CVD, in which case the wavelength applied to the first photovoltaic conversion layer 30 is in the range of 350 nm to 800 nm. Photovoltaic power should be generated at the wavelength of. The first photovoltaic conversion layer 60 has a thickness of 300 nm ± 10, and a-Si is an N-layer i-layer P-layer, in which three layers are sequentially formed inside the Plasma CVD equipment.

The intermediate reflective layer 50 is formed with GZO (ZnO + Ga) 70 nm ± 10%, refractive index of 2.0 or less, resistivity of 0.003 to 0.1 Ωcm, transmittance of 400 to 800 nm and 85% or more. For reference, in the prior art, ZnO was used as the material of the intermediate reflective layer. The intermediate reflective layer 50 plays a very important role in the integrated thin film solar cell, and since the short wavelength is reflected by the intermediate reflective layer 50 and the reflected short wavelength is repeated by the first transparent electrode layer 20, the reflection process is repeated. The primary photoconversion electromotive force may be obtained from the primary photovoltaic conversion layer 30.

The long wavelength passes through the intermediate reflective layer 50 and is reflected by the second transparent electrode layer (included in the back electrode layer 70) and then reflected by the intermediate reflective layer 50, the second wavelength being between the intermediate reflective layer 50 and the second transparent electrode layer. Since the reflection process is repeated around the photovoltaic conversion layer, the second photovoltaic conversion layer 60 may obtain the secondary photoconversion electromotive force. The photovoltaic power, which is the sum of the primary photovoltaic electromotive force and the secondary photoelectric electromotive force, is called power (watt), and the photoelectric conversion efficiency (%) is determined by calculating the power and area generated therein.

The first cut 40 is cut from the intermediate reflective layer 50 to the first transparent electrode layer 20 as shown in 40 of FIG. 14. The cut width is 50 μm and the cut has three layers (the transparent electrode layer 20 and the first cut). The photovoltaic conversion layer 30 and the intermediate reflection layer 50 are simultaneously formed. The interval constituting the initial cell is an important process. The cutting interval is 50 µm and the cell interval is 10 mm. After cutting, various inspections of the transparent electrode layer, the first photovoltaic conversion layer, and the intermediate reflection layer can be performed (to obtain a changed current or voltage in the same area, the current and voltage can be adjusted by changing the cell spacing).

After the first cutting as in 40 of FIG. 14, 60 (second photovoltaic conversion layer) in FIG. 15 is formed. At this time, the microcrystalline silicon (Micro Crystal layer) is pushed between the first cut portions 40, a film is formed as shown in 40 of FIG. 15, and all of them are formed of microcrystalline silicon within a cut width of 50 mu m.

The second photovoltaic conversion layer 60 of FIG. 15 deposits microcrystalline silicon into an N-layer i-layer P layer through plasma CVD. In this case, photovoltaic power is applied at a wavelength ranging from 550 nm to 1150 nm. The thickness of the second photovoltaic generation layer 60 should be about 2.0 μm ± 10.

The thickness of the first photovoltaic conversion layer 30 and the second photovoltaic conversion layer 60 is closely related to the light conversion efficiency, and indicates the change in power generation efficiency according to the change of the thickness, in particular the second photovoltaic conversion It is very closely related to the thickness of the layer 60, the power generation conversion efficiency was very high up to a certain thickness.

The second cut portion 80 (the transparent electrode layer and the back electrode layer connection path) in FIG. 16 is cut. The cutting width of the connection path is 50 µm and cuts to the first transparent electrode layer 20. The cutting position is continuously cut within the error range of the laser equipment on the side of the first cut portion 30. When the second cut is performed, the inflow state of the microcrystalline silicon introduced into the first cut part 30 may be confirmed. The cutting widths required for the first cut and the second cut are 50 m, respectively, and the distance between the center point of the first cut part 40 and the center point of the second cut part 80 is 50 m.

After the second cutting, the back electrode layer 70 is formed on the second photovoltaic conversion layer 60 by using GZO + Ag + Ti. The thickness of the film is 235 nm ± 10%, and ZnO (30 nm), Ag (200 nm), and Ti are formed. (5 nm), the GZO + Ag + Ti object flowing from the back electrode layer 70 through the second cutting path is connected to the transparent electrode layer 20 so that the back electrode layer 70 and the transparent electrode layer 20 are connected to each other. . Here, GZO is formed of the second transparent electrode layer, and before forming the back electrode layer, first, the second transparent electrode layer GZO, and the back electrode layers Ag and Ti are sequentially formed (see FIG. 17). It acts as a back electrode. Usually, the manufacturing process of the second transparent electrode layer is included in the manufacturing process of the back electrode layer 70.

In FIG. 18, the integrated thin film solar cell is formed by separating the cell from the third cut part 90 formed through the third cut, and the cutting position is continuously within the equipment error range in terms of the second cut part 80. Make a cut at. In this case, the cutting width is 50 μm, and the distance between the second cut portion 80 and the third cut portion 90 is 100 μm and 100 μm based on the center of each cut portion and the center of the cut portion. Therefore, when the interval widths of the three cut portions 40, 80, and 90 are added together, it is 150 m (error range ± 20 m).

When the third cut is made, the connection state of the conductive object introduced into the second cut part 80 can be confirmed, and the inspection and abnormality of the cut part can be checked from the first cut to the third cut. You can find out.

Finally, in order to completely remove impurities and the like between the third cut portions 90, the fourth cut is performed by laser processing or other methods.

In the prior art, the number of laser processing was 5 times and the cutting area was 370 μm to 400 μm, but the process was reduced to 4 times through the present invention and the cutting area from the first cutting to the third cutting was processed in the range of 150 μm to 170 μm. Therefore, the area of about 200 μm or more than the conventional technology may be used as the photovoltaic effective area as 100 of FIG. 19, and 110 is a completed integrated thin film solar cell. 120 is a section constituting the circuit of the cell was minimized to 150㎛ ~ 170㎛ range in the present invention.

Therefore, the photovoltaic effective area was increased to 200 μm in the cutting process from the first cutting to the fourth cutting. For example, if 1.54Watt output is obtained from an integrated thin film solar cell having a light conversion efficiency of 10%, the overall size can be changed through the present invention, but the light conversion efficiency of 0.2% can be increased, that is, the photonicity of the solar cell. The effective area of power generation increased by 0.2%. In other words, in an integrated thin film solar cell having 100% (154Watt) cells connected in series with a power efficiency of 10% and a power output of 1.54Watt per unit, the present invention can generate 102 cells in the same area. Power is generated and power generation efficiency increases to 10.2%.

19 and 20 are slightly different in shape from the structure of FIG. 18, but the manufacturing process is consistent with the above description, except that the positions of the cut portions are different, and the conversion efficiency is more improved than the structure of FIG. 19 within a limited area range. It is a structure that can be obtained.

That is, in FIG. 19, the cutting width of the first cutting part 40 is 50 μm by starting the cutting of the second cutting part 80 at the center of the first cutting part 40, but the second cutting part reaches the first cutting width 25 μm. By starting the second cutting at the point, the overall cutting interval can be reduced to between 125 μm and 150 μm to obtain improved photoelectric conversion efficiency.

20 is a result obtained by cutting with respect to the center between each cut portion and the cut portion based on the width of the second cut portion 80 to 50㎛ ~ 75㎛ by adjusting the connection width of the connection path between the transparent electrode layer and the back electrode layer. . That is, when forming the third cut portion 90, the connection width of the connection path can be effectively adjusted appropriately, and the improved photoelectric conversion efficiency can be obtained by adjusting the overall cutting interval to 125 μm to 170 μm.

21 is a step by step description of the process up to forming the first cutout, preparing a transparent substrate (S10); Stacking a first transparent electrode layer on the transparent substrate (S20); Stacking a first photovoltaic conversion layer on the first transparent electrode layer (S30); Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer (S40); And forming a first cutout to cut the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove (S50).

Figure 22 summarizes all the processes of the present invention, preparing a transparent substrate (S10); Stacking a first transparent electrode layer on the transparent substrate (S20); Stacking a first photovoltaic conversion layer on the first transparent electrode layer (S30); Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer (S40); Forming a first cutout for cutting the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove (S50); Stacking a second photovoltaic conversion layer on the intermediate reflective layer while filling the first cutout (S60); Cutting the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cutting a second side of the photovoltaic conversion layer immediately next to the second photovoltaic conversion layer filled in the first cutout to form a second cutout having a rectangular groove shape (S70). ); Stacking a back electrode layer on the second photovoltaic conversion layer and filling the second cutout (S80); A third cut portion having a rectangular groove shape to cut the back electrode layer, the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cut right next to the back electrode layer filled in the second cut portion to distinguish between the cells. Forming a step (S90).

1 is a first embodiment of the prior art.

Figure 2 is a second embodiment of the prior art.

3 is a state in which a transparent electrode is laminated on a substrate in the prior art.

Figure 4 is a state in which the first cut portion is formed by cutting the transparent electrode in the prior art.

5 is a state diagram in which the first photovoltaic generator is laminated in the prior art;

6 is a state diagram in which an intermediate reflective layer is laminated in the prior art;

Figure 7 is a state in which the second cut portion is formed by cutting the intermediate reflection layer in the prior art.

8 is a state diagram in which a second electromotive force generation unit is stacked in the prior art;

9 is a state in which a third cut portion is formed by cutting the second electromotive force generating portion in the prior art;

10 is a state diagram in which a back electrode layer is formed in the prior art;

FIG. 11 is a state diagram showing a fourth cutout for dividing a cell from a cell in the prior art; FIG.

Fig. 12 is a state in which a mark is formed on the bottom of the transparent substrate in the present invention.

FIG. 13 is a state diagram in which a first transparent electrode layer, a first electromotive force generating layer, and an intermediate reflection layer are sequentially formed on a transparent substrate in the present invention. FIG.

14 is a state diagram in which a first cut portion is formed in the present invention.

Fig. 15 is a state diagram in which a second electromotive force generating layer is formed in the present invention.

Fig. 16 is a working diagram of the second electromotive force generating layer using the semiconductor laser beam in the present invention.

Fig. 17 is a state diagram in which a second cutout portion is formed in the present invention.

Fig. 18 is a state diagram in which a back electrode layer is formed in the present invention.

Fig. 19 is a state diagram in which a third cutout is formed and completed in the present invention.

20 is a diagram showing a first embodiment of the present invention.

Figure 21 is a second embodiment of the present invention.

22 is a flowchart illustrating the operation of the first manufacturing method of the present invention.

23 is a flowchart illustrating the operation of the second manufacturing method of the present invention.

Explanation of symbols on the main parts of the drawings

The following reference numerals are used to describe the present invention.

10: transparent substrate

20: transparent electrode layer

30: first photovoltaic conversion layer

40: first cut portion (transparent electrode separation and intermediate reflective layer separation)

50: middle reflective layer

60: second photovoltaic conversion layer

70: back electrode layer (including secondary transparent electrode layer)

80: second cut portion (connection path between the transparent electrode and the back electrode)

90: third cut part (cutting cell and cell)

100: photovoltaic generation section (effective area section where photovoltaic power is generated)

110: integrated thin film solar cell

120: section constituting the circuit of the cell (section in which photovoltaic power does not occur)

Claims (9)

Transparent substrate 10; A first transparent electrode layer 20 laminated on the transparent substrate 10 and made of a conductor to transmit an electrical signal; A first photovoltaic conversion layer 30 stacked on the first transparent electrode layer 20 and generating photovoltaic power; The first photovoltaic power is stacked on the first photovoltaic conversion layer 30, and the short wavelength provided from the sun is reflected by the first photovoltaic conversion layer to be reflected back from the first transparent electrode layer 20. An intermediate reflective layer 50 for generating a; The intermediate reflective layer 50, the first photovoltaic conversion layer 30, and the first transparent electrode layer 20 are cut at once at a predetermined interval to form a cutting groove, and thus each layer 20, 30, A photoelectric conversion module structure for increasing the photovoltaic generation area of the integrated thin film solar cell, characterized in that it comprises a first cut portion 40 to allow the various inspection progress of 50). Transparent substrate 10; A first transparent electrode layer 20 laminated on the transparent substrate 10 and made of a conductor to transmit an electrical signal; A first photovoltaic conversion layer 30 stacked on the first transparent electrode layer 20 and generating photovoltaic power; Stacked on top of the first photovoltaic conversion layer 30, the short wavelength provided by the sun is reflected to the first photovoltaic conversion layer to repeat the process reflected back from the first transparent electrode layer to generate the first photovoltaic power. Intermediate reflective layer 50; The intermediate reflective layer 50, the first photovoltaic conversion layer 30, and the first transparent electrode layer 20 were cut at a predetermined interval to form rectangular grooves, and various inspection proceeds of each layer entered through the cut grooves. The first cut portion 40 to enable this; The second photovoltaic conversion layer stacked on the intermediate reflective layer 50 but filling the first cutout 40, and repeating the reflection process when the long wavelength supplied from the sun is reflected through the intermediate reflective layer to generate the second photovoltaic power. 60; The second photovoltaic conversion layer 60, the intermediate reflection layer 50, and the first photovoltaic conversion layer 30 may be cut, but immediately adjacent to the second photovoltaic conversion layer 60 filled in the first cut portion 40. A second cutting part 80 formed by cutting a groove so as to check the connection state of the second photovoltaic conversion layer 60 by cutting; The second photovoltaic conversion layer 60 is stacked on top of the second cutout 80, and the conductor reaches the first transparent electrode layer 20 so that the first transparent electrode layer 20 is connected to the connection line is formed. A back electrode layer 70 to be connected to each other and including a conductive second transparent electrode layer; The back electrode layer 70, the second photovoltaic conversion layer 60, the intermediate reflection layer 50, and the first photovoltaic conversion layer 30 are cut, but the back electrode layer 70 is filled in the second cutout 80. To cut the side to check the connection state of the conductive object constituting the back electrode layer introduced into the second cut portion 80, and comprises a third cut portion 90 of the rectangular groove shape to distinguish the cell and the cell. Photoelectric conversion module structure for increasing the photovoltaic generation area of the integrated thin film solar cell. The method according to claim 1 or 2, A photoelectric conversion module structure for increasing the photovoltaic generation area of the integrated thin film solar cell, characterized in that the display substrate (Mark, 130) is further formed on the bottom of the transparent substrate (10). The method according to claim 1 or 2, The photoelectric conversion module structure for increasing the photovoltaic generation area of the integrated thin film solar cell, characterized in that the material of the intermediate reflective layer 50 using GZO (ZnO + Ga). The method according to claim 1 or 2, The photoelectric conversion module structure for increasing the photovoltaic generation area of the integrated thin film solar cell, characterized in that the material of the second transparent electrode layer using GZO (ZnO + Ga). Preparing a transparent substrate (S10); Stacking a first transparent electrode layer on the transparent substrate (S20); Stacking a first photovoltaic conversion layer on the first transparent electrode layer (S30); Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer (S40); And forming a first cutout to cut the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove (S50). Method of manufacturing a photoelectric conversion module for increasing the photovoltaic generation area of the. Preparing a transparent substrate (S10); Stacking a first transparent electrode layer on the transparent substrate (S20); Stacking a first photovoltaic conversion layer on the first transparent electrode layer (S30); Stacking an intermediate reflective layer on top of the first photovoltaic conversion layer (S40); Forming a first cutout for cutting the intermediate reflective layer, the first photovoltaic conversion layer, and the first transparent electrode layer at a predetermined interval to form a square groove (S50); Stacking a second photovoltaic conversion layer on the intermediate reflective layer while filling the first cutout (S60); Cutting the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cutting a second side of the photovoltaic conversion layer immediately next to the second photovoltaic conversion layer filled in the first cutout to form a second cutout having a rectangular groove shape (S70). ); Stacking a back electrode layer on the second photovoltaic conversion layer and filling the second cutout (S80); A third cut portion having a rectangular groove shape to cut the back electrode layer, the second photovoltaic conversion layer, the intermediate reflection layer, and the first photovoltaic conversion layer, and cut right next to the back electrode layer filled in the second cut portion to distinguish between the cells. Method of manufacturing a photoelectric conversion module for increasing the photovoltaic generation area of the integrated thin film solar cell, characterized in that comprising the step (S90) forming. The method of claim 7, wherein In the forming of the second cutout (S70), the cutout region of the second cutout portion is started from the central axis of the first cutout portion. The method of manufacturing a photoelectric conversion module for increasing the photovoltaic generation area of the integrated thin film solar cell. . The method of claim 7, wherein The cutting width of the second cut portion is widened to widen the connection between the first transparent electrode layer and the back electrode layer, and when the third cut portion is formed, the cutting width of the third cut portion is changed to be long or short so as to connect the transparent electrode layer and the back electrode layer. A method of manufacturing a photoelectric conversion module for increasing the photovoltaic generation area of an integrated thin film solar cell, characterized in that the width is adjustable.

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