JP2007324633A - Integrated tandem-type thin film solar cell module and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tandem-type thin film solar cell module having electric conductivity and high light conversion efficiency in which current leakage through an intermediate layer with light transmissivity and light reflectivity is prevented from occurring and an ineffective area not contributing to electricity generation is prevented from enlarging, and its manufacturing method. <P>SOLUTION: The module has a configuration in which a third separation groove is provided between the intermediate layer and a connection groove, the third separation groove and a first separation groove provided in a transparent electrode are arranged in a positional relationship so that parts or whole of their projections seen from the normal direction of the surface of a transparent substrate are overlapped, the third separation groove is buried with a crystalline silicon film, and a separation member of the intermediate layer is not present between the third separation groove and the connection groove. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a structure of an integrated tandem thin film solar cell module and a method for manufacturing the same. In particular, the present invention relates to an integrated tandem-type thin film silicon solar cell module having an intermediate layer having electrical conductivity and light transmissivity and light reflectivity, and a method for manufacturing the same.

A multi-junction photoelectric conversion element in which a plurality of semiconductor photoelectric conversion units having a photoelectric conversion function are stacked, for example, in a solar cell, combining a top cell and a bottom cell with different wavelength absorption bands is very effective in increasing power generation conversion efficiency. It is known that there is.
This is because the transparent intermediate layer has a function of spectral distribution of incident light energy to each junction unit, for example, a function of reflecting short wavelength light and transmitting long wavelength light. It is intended to improve efficiency.

Specifically, an integrated tandem-type thin film silicon solar cell reflects a transparent electrode layer, an amorphous silicon photoelectric conversion unit layer, short-wavelength light on a light-transmitting substrate (for example, glass), It is formed by sequentially laminating an intermediate layer having a function of transmitting light, a crystalline silicon photoelectric conversion unit layer, and a back electrode layer.
The amorphous silicon photoelectric conversion unit layer includes a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, and the like. The crystalline silicon photoelectric conversion unit layer includes a p-type microcrystalline semiconductor layer, an i-type microcrystalline semiconductor layer, an n-type microcrystalline semiconductor layer, and the like.
This integrated tandem type thin film solar cell, which is a combination of amorphous silicon and crystalline silicon, is expected to have a photoelectric conversion efficiency of 10 to 15% in the practical production line. Yes.

A typical example of an integrated tandem-type thin film solar cell module is disclosed in Patent Document 3, for example.
This includes a transparent electrode layer sequentially laminated on a transparent substrate, a first thin film photoelectric conversion unit including an amorphous photoelectric conversion layer, and has conductivity, light transmission and light reflection. Having an opening at the interface between the intermediate layer, the second thin film photoelectric conversion unit including the crystalline photoelectric conversion layer, the back electrode layer, the transparent electrode layer, and the first thin film photoelectric conversion unit, A first separation groove having a bottom surface at an interface between the transparent electrode layer and the transparent substrate; an opening at an interface between the back electrode layer and the second thin film photoelectric conversion unit; and the first thin film photoelectric conversion unit; A connection groove having a bottom surface at the interface of the transparent electrode layer and filled with a material constituting the back electrode layer, and an opening on the top surface of the back electrode layer at a position away from the connection groove. And at the interface between the first thin film photoelectric conversion unit and the transparent electrode layer. Tandem thin-film solar cell and a second separation groove having a surface is a plurality juxtaposed, and is an integrated tandem-type thin film solar cell modules are electrically connected in series to each other.
However, the above-described typical structure has a problem that an electrically conductive intermediate layer and a connection groove filled with a conductive material constituting the back electrode are in contact with each other, resulting in an electrical short circuit state. That is, there is a problem that the generated current leaks from the intermediate layer to the connection groove and it is extremely difficult to improve the photoelectric conversion efficiency.

  Recently, as an attempt to improve the above problem, an integrated tandem-type thin film silicon solar cell module having a new structure has been proposed in, for example, Patent Document 1 and Patent Document 2.

  Patent Document 1 includes a transparent substrate and a plurality of hybrid thin-film photoelectric conversion cells juxtaposed on one main surface of the transparent substrate and connected in series to each other. A transparent front electrode layer sequentially laminated on one main surface of a transparent substrate, a first thin film photoelectric conversion unit including an amorphous photoelectric conversion layer, both conductive and light transmissive and light reflective The transparent front surface between each adjacent two of the plurality of thin film photoelectric conversion cells, the intermediate reflection layer having a second photoelectric thin film conversion unit having a crystalline photoelectric conversion layer, and a back electrode layer The electrode layer is divided by a first separation groove, the first separation groove is embedded with a material constituting the first thin film photoelectric conversion unit, and the back electrode is disposed at a position away from the first separation groove. Opening on top of layer A second separation groove having a bottom surface constituted by an interface between the transparent front electrode layer and the first thin film photoelectric conversion unit, and the first separation groove and the second separation groove A connection groove having an opening at the interface between the second thin film photoelectric conversion cell and the back electrode layer, and a bottom surface formed by the interface between the transparent front electrode layer and the first thin film photoelectric conversion unit The connection groove is filled with a material constituting the back electrode layer to electrically connect one back electrode layer and the other transparent front electrode layer of the two adjacent thin film photoelectric conversion cells. A third separation having an opening at the interface between the intermediate reflection layer and the second thin film photoelectric conversion unit and the bottom surface being configured by the interface between the transparent front electrode layer and the first thin film photoelectric conversion unit Grooves are the first separation groove and the connection groove. The third separation groove is provided so that the third separation groove is located between the connection groove and the third separation groove. A thin film photoelectric conversion module embedded with a material constituting the second thin film photoelectric conversion unit is shown.

  Patent Document 1 includes a transparent substrate and a plurality of hybrid thin film photoelectric conversion cells juxtaposed on one main surface of the transparent substrate and connected in series to each other, and the plurality of thin film photoelectric conversion cells includes: , A transparent front electrode layer sequentially laminated on one main surface of the transparent substrate, a first thin film photoelectric conversion unit having an amorphous photoelectric conversion layer, having conductivity and light transmissive and light reflective properties Between the adjacent two of the plurality of thin film photoelectric conversion cells, the intermediate reflection layer having both, a second photoelectric thin film conversion unit having a crystalline photoelectric conversion layer, and a back electrode layer, The transparent front electrode layer is divided by first and fourth separation grooves spaced apart from each other, and the first and fourth separation grooves are embedded with a material constituting the first thin film photoelectric conversion unit, and the back electrode Top of layer A second separation groove having an opening and a bottom surface formed by an interface between the transparent front electrode layer and the first thin film photoelectric conversion unit is between the first separation groove and the second separation groove. The fourth separation groove is provided, and an opening is provided at an interface between the second thin film photoelectric conversion cell and the back electrode layer between the fourth separation groove and the second separation groove. And having a bottom surface formed by an interface between the transparent front electrode layer and the first thin film photoelectric conversion unit, and the connection groove is filled with a material constituting the back electrode layer. Electrically connecting one back electrode layer and the other transparent front electrode layer of the two adjacent thin film photoelectric conversion cells, the intermediate electrode between the first separation groove and the fourth separation groove; Having an opening at the interface between the reflective layer and the second thin film photoelectric conversion unit; A third separation groove having a surface formed by an interface between the transparent front electrode layer and the first thin film photoelectric conversion unit is provided, and the third separation groove constitutes the second thin film photoelectric conversion unit. A thin film photoelectric conversion module characterized by being embedded with a material is shown.

  Patent Document 1 includes a transparent substrate and a plurality of hybrid thin film photoelectric conversion cells juxtaposed on one main surface of the transparent substrate and connected in series to each other, and the plurality of thin film photoelectric conversion cells includes: , A transparent front electrode layer sequentially laminated on one main surface of the transparent substrate, a first thin film photoelectric conversion unit having an amorphous photoelectric conversion layer, having conductivity and light transmissive and light reflective properties Between the adjacent two of the plurality of thin film photoelectric conversion cells, the intermediate reflection layer having both, a second photoelectric thin film conversion unit having a crystalline photoelectric conversion layer, and a back electrode layer, The transparent front electrode layer is divided by a first separation groove, and the first separation groove is embedded with a material constituting the first thin film photoelectric conversion unit, and is located away from the first separation groove. Upper surface of back electrode layer A second separation groove having an opening and having a bottom surface formed by an interface between the transparent front electrode layer and the first thin film photoelectric conversion unit is provided, and the first separation groove and the second separation groove are provided. With an opening at the interface between the second thin film photoelectric conversion cell and the back electrode layer, and the bottom surface is formed by the interface between the transparent front electrode layer and the first thin film photoelectric conversion unit. A connection groove is provided, and the connection groove is filled with a material constituting the back electrode layer, thereby electrically connecting one back electrode layer and the other transparent front electrode layer of the two adjacent thin film photoelectric conversion cells. A third separation groove having an opening at an interface between the intermediate reflection layer and the second thin film photoelectric conversion unit and having a bottom surface formed by an interface between the transparent substrate and the transparent front electrode layer, Between the first separation groove and the connection groove, the first Is provided such that the first separation groove is located between the connection groove and the third separation groove, and the third separation groove is provided in the second thin film photoelectric sensor. A thin film photoelectric conversion module characterized by being embedded with a material constituting a conversion unit is shown.

  Further, in Patent Document 1, as problems of the prior art, residual stress (cause of film peeling) and electrical short circuit (crystalline) caused by the separation groove of the transparent electrode and the crystalline film formed therearound are disclosed. In some cases, it is pointed out that the conductivity is higher than in the case of being amorphous.

  Patent Document 2 includes a light-transmitting substrate and a plurality of solar cells formed on the light-transmitting substrate and connected in series with each other. A transparent conductive film formed on the light transmissive substrate, a first thin film light conversion unit formed on the transparent conductive film, an intermediate layer formed on the first thin film light conversion unit, A second thin film light conversion unit formed on the intermediate layer; a back electrode formed on the second thin film light conversion unit; a first separation groove for dividing the transparent conductive film; and the back electrode. A second separation groove that divides the first thin film light conversion unit, the intermediate layer, and the second thin film light conversion unit, and an interface between the back electrode and the second thin film light conversion unit The first thin film light conversion unit and the transparent member. A connection groove having a bottom surface at the interface with the conductive film and filled with a material constituting the back electrode, and an intermediate layer separating portion in which the intermediate layer is removed or altered to lose conductivity. A thin film solar cell module is shown.

Patent Document 2 shows that the width of the portion where the intermediate layer loses conductivity due to the intermediate layer separating portion is three times or more the width in the surface direction of the connection groove.
Further, Patent Document 2 shows that the intermediate layer separating portion is a portion where components constituting the intermediate layer are aggregated and become discontinuous.

JP-A-2002-261308 (FIGS. 2 to 4) JP-A-2006-313872 (FIGS. 1-4, 7-9) Japanese Patent No. 3755048 (FIG. 2)

The present inventor has found that the conventional integrated tandem-type thin film silicon solar cell has a module structure in addition to the problem of the leakage current pointed out in Patent Document 1 and Patent Document 2 as a problem related to power generation conversion efficiency improvement. I found a problem.
That is, the prior art described in Patent Document 1 and Patent Document 2 has a problem that a part of electric power generated in the photoelectric conversion unit layer of the integrated tandem thin film silicon solar cell leaks through the intermediate layer. Although a solution has been made, there is a problem related to the power generation function, that is, an area loss contributing to power generation as a solar cell module, that is, an increase in ineffective area.
Therefore, when applying the prior art to the production line, it is still difficult to improve the power generation efficiency as a module.

The prior art described in Patent Document 1 includes a first separation groove, a second separation groove, a third separation groove, and a junction portion between the first thin film photoelectric conversion unit and the second thin film photoelectric conversion unit. It has a structure in which four grooves called connection grooves are juxtaposed along the surface of the transparent substrate. Therefore, in the case of laser etching processing, the total distance in the width direction occupied by the first separation groove, the second separation groove, the third separation groove, and the connection groove needs to be at least 360 μm. .
However, the width of the first separation groove: 60 μm, the width of the second separation groove: 60 μm, the width of the third separation groove: 60 μm, the width of the connection groove: 60 μm, the first separation groove and the third separation groove This is a case where the distance between the centers is 100 μm, the distance between the centers of the third separation groove and the connection groove is 100 μm, and the center distance between the connection groove and the second separation groove is 100 μm.
This is 3.6% when the width of the band-shaped cell constituting the solar cell module is 10 mm. That is, the ineffective area that cannot contribute to power generation is very large compared to the case of a conventional amorphous silicon solar cell (processing width at the time of laser etching processing: about 240 μm, 2.4%).
If the production of the solar cell module is 40 MW per year, the loss due to the ineffective area that cannot contribute to power generation is as great as 1.44 MW.

In the prior art described in Patent Document 2, the first separation groove, the second separation groove, the intermediate layer separation section, and the connection are provided at the junction between the first thin film photoelectric conversion unit and the second thin film photoelectric conversion unit. Four grooves called grooves are arranged side by side along the surface of the transparent substrate. Therefore, during the laser etching process, the first separation groove, the second separation groove, and the intermediate layer separation portion (the width of the portion where the intermediate layer loses conductivity is in the plane direction of the connection groove). The distance in the width direction occupied by the connection groove is at least about 560 μm in total. When laser processing at the intermediate layer separation portion is performed, the deterioration of the intermediate layer material and the amorphous layer due to heat spreads over a wide range that is greater than or equal to the width of the laser beam. It is conceivable that the distance increases from the above numerical value.
However, the width of the first separation groove: 60 μm, the width of the second separation groove: 60 μm, the width of the separation groove of the intermediate layer: 180 μm, the width of the connection groove: 60 μm, the separation groove of the first separation groove and the intermediate layer This is a case where the distance between the centers is 200 μm, the distance between the centers of the third separation groove and the connection groove is 200 μm, and the center distance between the connection groove and the second separation groove is 100 μm.
This is because, when the width of the band-shaped cell constituting the solar cell module is 10 mm, the ratio of the ineffective area is 5.6% of the area of the entire module. In other words, the ineffective area that cannot contribute to power generation is very large compared to the case of a conventional amorphous silicon solar cell (processing width at the time of laser etching processing: about 240 μm).
If the width of the band-shaped cells constituting the solar cell module is 10 mm, the loss due to the invalid area that cannot contribute to power generation becomes as great as 2.24 MW at an annual output of 40 MW.

  The present invention has been made in view of the above problems, and relates to an integrated tandem-type thin film solar cell module having an intermediate layer, which prevents leakage current through the intermediate layer and does not contribute to power generation, that is, invalid. An object of the present invention is to provide a structure of an integrated tandem thin film solar cell module capable of effectively realizing a reduction in area and a manufacturing method thereof.

  In order to achieve the above object, an integrated tandem-type thin film solar cell module according to the present invention includes a transparent electrode layer sequentially laminated on a transparent substrate, and a first thin film photoelectric conversion comprising an amorphous photoelectric conversion layer. A second thin-film photoelectric conversion unit comprising a unit, a conductive intermediate layer having light transmission and light reflection, a crystalline photoelectric conversion layer, a back electrode layer, and the transparent electrode A first separation groove having an opening at the interface between the layer and the first thin film photoelectric conversion unit, and having a bottom surface at the interface between the transparent electrode layer and the transparent substrate; the back electrode layer; and the second thin film photoelectric conversion unit. A connection groove having an opening at the interface of the conversion unit, having a bottom surface at the interface between the first thin film photoelectric conversion unit and the transparent electrode layer, and filled with a material constituting the back electrode layer; At a position away from the connection groove, the back electrode layer A plurality of tandem thin-film solar cells each having an opening on the surface and a second separation groove having a bottom surface at the interface between the first thin-film photoelectric conversion unit and the transparent electrode layer are arranged side by side, and In an integrated tandem-type thin film solar cell module electrically connected in series, the second thin film photoelectric conversion unit and the intermediate between the end of the intermediate layer on the connection groove side and the connection groove A third separation groove having an opening at the interface of the layers, and having a bottom surface in an intermediate region between the intermediate layer and the transparent electrode layer, and the third separation groove and the first separation groove, A material that constitutes the second thin film photoelectric conversion unit is disposed in a positional relationship in which a part or all of the projections as viewed from the normal direction of the surface of the transparent substrate are overlapped, and the third separation groove is a material constituting the second thin film photoelectric conversion unit Embedded in the third separation groove It characterized by having a structure of separating members of the intermediate layer does not exist between the connecting groove.

  Similarly, in order to achieve the above object, an integrated tandem-type thin film solar cell module according to the present invention includes a first electrode including a transparent electrode layer and an amorphous photoelectric conversion layer sequentially stacked on a transparent substrate. A thin film photoelectric conversion unit, a second thin film photoelectric conversion unit having conductivity, a light-transmitting and light-reflective intermediate layer, a crystalline photoelectric conversion layer, a back electrode layer, A first separation groove having an opening at an interface between the transparent electrode layer and the first thin film photoelectric conversion unit, and having a bottom surface at an interface between the transparent electrode layer and the transparent substrate; the back electrode layer; A connection having an opening at the interface of the thin film photoelectric conversion unit, a bottom surface at the interface between the first thin film photoelectric conversion unit and the transparent electrode layer, and being filled with a material constituting the back electrode layer Groove and the back surface at a position away from the connection groove A plurality of tandem thin-film solar cells, each having an opening on the top surface of the polar layer and comprising a second separation groove having a bottom surface at the interface between the first thin-film photoelectric conversion unit and the transparent electrode layer, In addition, in the integrated tandem thin film solar cell module that is electrically connected to each other in series, the second thin film photoelectric conversion unit is provided between the connection groove and an end of the intermediate layer on the connection groove side. A third separation groove having an opening at the interface between the intermediate layer and the transparent electrode layer, and a third separation groove having a bottom surface in the intermediate region between the intermediate layer and the transparent electrode layer. It is embedded in the material constituting the photoelectric conversion unit, and has a structure in which no separation member of the intermediate layer exists between the third separation groove and the connection groove.

  Similarly, in order to achieve the above object, an integrated tandem-type thin film solar cell module according to the present invention has the intermediate layer composed of zinc oxide (ZnO), tin oxide (SnO2), indium tin oxide (ITO), oxidation It contains at least one selected from oxides of titanium (TiO2) and aluminum oxide (Al2O3).

  Similarly, in order to achieve the above object, an integrated tandem-type thin film solar cell module manufacturing method according to the present invention is a method for manufacturing an integrated tandem-type thin film solar cell module according to the present invention, comprising: Forming a transparent electrode layer, forming a first separation groove, forming a first thin film photoelectric conversion unit on the transparent electrode layer and in the first separation groove, A step of forming an intermediate layer on the first thin film photoelectric conversion unit; a step of forming the third separation groove; and a second thin film photoelectric conversion unit on the intermediate layer and the third separation groove. A step of forming, a step of forming the connection groove, a step of forming a back electrode on the upper portion of the second thin film photoelectric conversion unit and the connection groove, and a step of forming the second separation groove. The third minute Wherein one side of the side surface and the connection groove of the connecting groove side of the groove, characterized in that processing to share the same interface.

  Similarly, in order to achieve the above object, an integrated tandem-type thin film solar cell module manufacturing method according to the present invention is a method for manufacturing an integrated tandem-type thin film solar cell module according to the present invention, comprising: Forming a transparent electrode layer, forming a first separation groove, forming a first thin film photoelectric conversion unit on the transparent electrode layer and in the first separation groove, A step of forming an intermediate layer on the first thin film photoelectric conversion unit; a step of forming the third separation groove; and a second thin film photoelectric conversion unit on the intermediate layer and the third separation groove. A step of forming, a step of forming the connection groove, a step of forming a back electrode on the upper portion of the second thin film photoelectric conversion unit and the connection groove, and a step of forming the second separation groove. The third minute When laser machining grooves, the separation member of the intermediate layer between the connecting groove and the third separating groove, characterized in that to avoid remaining.

  According to the present invention, an integrated tandem-type thin film having a high-efficiency power generation function that suppresses a leakage current through an intermediate layer and suppresses an increase in an ineffective area at an electrical junction of adjacent tandem-type thin-film solar cells. A solar cell module and a manufacturing method thereof are provided.

  According to the present invention, it is possible to further increase the power generation efficiency of the integrated tandem-type thin film silicon solar cell. Therefore, the contribution to the improvement of productivity and the reduction of product cost in the thin film silicon solar cell industry is remarkably large.

  Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same member, and the overlapping description is abbreviate | omitted.

First, an integrated tandem-type thin film solar cell module according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2 (a) to 2 (g).
FIG. 1 is a structural view schematically showing a cross section of an integrated tandem thin film solar cell module according to a first embodiment of the present invention. FIG. 2A to FIG. 2G are diagrams showing manufacturing steps of the integrated tandem-type thin film solar cell module according to the first embodiment of the present invention.
1 and 2A to 2G, reference numeral 1 denotes an integrated tandem thin film solar cell module.
Reference numeral 12 denotes a tandem-type thin film solar cell, which is provided on a transparent substrate 2 described later, a first thin film photoelectric conversion unit 4 provided with a transparent electrode layer 3 described later, an amorphous photoelectric conversion layer described later, and an intermediate described later. It has a structure in which a layer 5, a second thin film photoelectric conversion unit 6 provided with a crystalline photoelectric conversion layer described later, and a back electrode layer 7 described later are sequentially stacked.
The tandem thin-film solar cells 12 are divided in a direction perpendicular to the paper surface by a second separation groove 9 described later, and a plurality of the tandem thin-film solar cells 12 are juxtaposed.
Reference numeral 2 denotes a transparent substrate, for example, a glass substrate.
Reference numeral 3 denotes a transparent electrode layer, which is made of a transparent and conductive material. The transparent electrode layer 3 is made of an oxide such as a SnO 2 film, a ZnO film, or an ITO (indium tin oxide) film, and can be formed by, for example, a thermal CVD method, a sputtering method, or a physical vapor deposition method. Here, a ZnO film doped with aluminum is formed by a sputtering method. The surface of the transparent electrode layer 3 preferably forms a texture structure including fine irregularities. In addition, the uneven structure of the transparent electrode layer 3 is the sun which injects into the 1st thin film photoelectric conversion unit provided with the below-mentioned amorphous photoelectric conversion layer, and the 2nd thin film photoelectric conversion unit provided with the crystalline photoelectric conversion layer. It is known that it has an effect of confining light and contributes to improvement of photoelectric conversion efficiency. The thickness of the transparent electrode 3 is generally 0.2 μm to 1.0 μm, and preferably 0.5 μm, for example.
Reference numeral 4 denotes a first thin film photoelectric conversion unit including an amorphous photoelectric conversion layer, which includes an amorphous photoelectric conversion layer, such as a p-type silicon-based semiconductor layer and an amorphous silicon-based photoelectric conversion layer. , And an n-type silicon-based semiconductor layer are sequentially stacked. The p-type silicon semiconductor layer, the amorphous silicon photoelectric conversion layer, and the n-type silicon semiconductor layer can all be formed by a plasma CVD method. The thickness of the first thin film photoelectric conversion unit 4 is generally 0.1 μm to 0.6 μm, and preferably 0.3 μm, for example.

Reference numeral 5 denotes an intermediate layer, which is made of a conductive material and has light transmissivity and light reflectivity. The intermediate layer 5 is made of an oxide such as a SnO 2 film, a ZnO film, or an ITO (indium tin oxide) film, and can be formed by, for example, a thermal CVD method, a sputtering method, or a physical vapor deposition method. Here, a ZnO film doped with aluminum is formed by a sputtering method. The surface of the intermediate layer 5 preferably forms a texture structure including fine irregularities. The uneven structure of the intermediate layer 5 is the sun incident on the first thin film photoelectric conversion unit 4 having an amorphous photoelectric conversion layer and the second thin film photoelectric conversion unit having a crystalline photoelectric conversion layer described later. It is known that it has an effect of confining light and contributes to improvement of photoelectric conversion efficiency. Generally the thickness of the intermediate | middle layer 5 is 20 nm-90 nm, for example, 40 nm-60 nm are preferable.
Reference numeral 6 denotes a second thin film photoelectric conversion unit including a crystalline photoelectric conversion layer, which includes a crystalline photoelectric conversion layer. For example, a p-type silicon-based semiconductor layer, a crystalline silicon-based photoelectric conversion layer, and n Type silicon-based semiconductor layers are sequentially stacked. Note that any of these p-type silicon-based semiconductor layers, crystalline silicon-based photoelectric conversion layers, and n-type silicon-based semiconductor layers can be formed by a plasma CVD method. Generally the thickness of the 2nd thin film photoelectric conversion unit 6 is 1.5 micrometers-6 micrometers, for example, 2 micrometers is preferable.
Reference numeral 7 denotes a back electrode layer, which is a thin film of a metal material such as silver and aluminum, and has a function as a light reflection layer as well as a function as an electrode. The back electrode layer 6 can be formed by physical vapor deposition or sputtering. The thickness is 100 nm to 400 nm, for example, 300 nm is preferable.
Reference numeral 8 denotes a first separation groove extending in a direction perpendicular to the paper surface. The first separation groove 8 divides the transparent electrode layer 3 in correspondence with the tandem thin-film solar battery 12. The first separation groove 8 has an opening at the interface between the transparent electrode layer 3 and the first thin film photoelectric conversion unit 4, and has a bottom surface on the surface of the transparent substrate 2. The first separation groove 8 is filled with an amorphous silicon film constituting the first thin film photoelectric conversion unit 4. Since the amorphous silicon film is a highly electrically insulating film, the transparent electrodes 3 constituting the adjacent tandem thin film solar cells 12 are electrically insulated by the first separation groove.
Reference numeral 8 a is one side surface of the first separation groove 8. The side surface 8a extends in a direction perpendicular to the paper surface.
Reference numeral 9 denotes a second separation groove, which is provided at a position away from the first separation groove 8, has an opening on the upper surface of the back electrode layer 7, and has the transparent electrode layer 3 and the first thin film photoelectric conversion. It has a bottom surface at the interface with the unit 4. The second separation groove has the first and second thin film photoelectric conversion units 4, 6, the intermediate layer 5, and the back electrode layer 7 perpendicular to the paper surface corresponding to the tandem thin film solar cell 12. It is divided in various directions.

Reference numeral 10 denotes a separation groove of the first intermediate layer, which is a region between a side surface 11a of a connection groove 11 described later and a surface extending from a side surface 8a of the first separation groove 8 in the normal direction of the upper surface of the transparent substrate. In this embodiment, the spatial layer has an opening at the interface between the intermediate layer 5 and the second thin film photoelectric conversion unit 6 and has a bottom surface in an intermediate region between the intermediate layer 5 and the transparent electrode layer 3. . One side surface 11a of the connection groove 11 and one end surface of the separation groove 10 of the first intermediate layer share the same interface.
The separation groove 10 is provided between the intermediate layer 5 and a connection groove 11 described later in a direction perpendicular to the paper surface.
That is, the separation groove 10 of the first intermediate layer is formed between the second thin-film photoelectric conversion unit 6 and the intermediate layer 5 between the connection groove 11 and the end of the intermediate layer 5 on the connection groove side. A separation groove having an opening at the interface between the intermediate layer 5 and the transparent electrode layer 3 and a bottom surface in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3, and the separation groove 10 of the first intermediate layer and the first separation groove 8 are arranged in a positional relationship in which a part or all of the projections seen from the normal direction of the surface of the transparent substrate 2 are superposed, and the separation groove 10 of the first intermediate layer is formed in the second intermediate layer. The thin film photoelectric conversion unit 6 is embedded in the material and has a structural feature that no separation member of the intermediate layer 5 exists between the separation groove 10 of the first intermediate layer and the connection groove 11. .
The separation groove 10 of the first intermediate layer is filled with a crystalline silicon-based film that constitutes the second thin film photoelectric conversion unit 6. Since this crystalline silicon film has high electrical insulation, the intermediate layer 5 and the connection groove 11 are electrically insulated.
Further, when forming the separation groove 10 of the intermediate layer, as will be described later, it is laser-etched so that no divided portion of the intermediate layer 5 remains between the intermediate layer 5 and the connection groove 11, When the intermediate layer 5 is laser-etched, a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is also deleted. Laser processing residue can be completely removed. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
In addition, since the above-mentioned matter has a division part of the intermediate layer 5 in the prior art, it is difficult to reliably maintain the electrical insulation between the intermediate layer 5 and the connection groove 11 due to the influence. On the other hand, the present invention means that there is no influence because the divided portion of the intermediate layer 5 does not remain.
Reference numeral 11 denotes a connection groove having an opening at the interface between the second thin film photoelectric conversion unit 6 and the back electrode layer 7, and a bottom surface at the interface between the transparent electrode layer 3 and the first thin film photoelectric conversion unit 4. Have. The connection groove 11 is embedded with a material constituting the back electrode layer 7 to electrically connect one back electrode layer 7 and the other transparent electrode layer 3 of two adjacent tandem thin-film solar cells 12.
Reference numeral 11 a is one side surface of the connection groove 11. One side surface 11a of the connection groove 11 extends in a direction perpendicular to the paper surface.

According to the first embodiment of the present invention, the above-described integrated tandem-type thin film solar cell module 1 can be manufactured by the following method.
First, a glass having a size of 110 cm × 140 cm × a thickness of 0.5 cm is prepared as the transparent substrate 2, and a SnO 2 film or a ZnO film, for example, an Al-doped ZnO film, for example, is used as the transparent electrode layer 3 on the transparent substrate 2. Alternatively, it is formed by a sputtering apparatus or the like, for example, by a sputtering apparatus (not shown).
Next, the first separation groove 8 shown in FIG. 2A is formed in the transparent electrode layer 3. In the same figure, a portion of reference numeral 8 is parallel to the 110 cm side of the transparent substrate 2 and its center interval, for example, 10 mm, groove width, for example, 40 μm, is not shown in the figure.
It is formed by laser etching using a laser.
For example, 1.06 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 25 KHz, and an average output of 10 W are used.

Next, as shown in FIG. 2B, the first thin film photoelectric conversion unit 4 is formed on the transparent electrode layer 3 by a plasma CVD apparatus (not shown).
By forming the first thin film photoelectric conversion unit 4, the first separation groove 8 formed in the transparent electrode layer 3 is filled with an amorphous silicon-based film constituting the first thin film photoelectric conversion unit 4. . Since this amorphous silicon film has high electrical insulation, the electrical resistance between the transparent electrode layers 3 adjacent to each other separated by the first separation groove 8 is very high.
Next, as shown in FIG. 2B, for example, an Al-doped ZnO film is formed on the first thin film photoelectric conversion unit 4 as an intermediate layer 5 by a sputtering apparatus (not shown). The intermediate layer 5 has a thickness in the range of 20 nm to 90 nm, for example, 50 nm.

Next, the separation groove 10 of the first intermediate layer 5 shown in FIG. 2C is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
Here, the laser etching processing conditions are selected so that a divided portion of the intermediate layer 5 does not remain between the intermediate layer 5 and the connection groove 11. That is, when the intermediate layer 5 is subjected to laser etching, a condition in which a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is laser etched, The conditions under which the laser processing residue of the intermediate layer 5 can be completely removed are selected. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
In addition, the laser processing conditions for the intermediate layer 5 are selected so that no laser processing residue of the intermediate layer 5 is generated, and the electrical resistance between the adjacent intermediate layers 5 is measured with a tester (not shown) across the separation groove 10. It is confirmed that the measured value is 100 KΩ or more, preferably 500 KΩ or more. This measured value is closely related to the shunt resistance, which is an important parameter of the power generation performance of the integrated tandem thin film solar cell module 1 to be manufactured, and has an important meaning in preventing leakage of the generated current. . In addition, when the laser processing residue generated at the time of laser processing is not removed, it is difficult to keep the measured value at 100 KΩ or more.
In FIG. 2C, from the film surface side of the intermediate layer 5, the laser beam of a laser etching apparatus (not shown) is centered at, for example, 40 μm from the center point of the first separation groove 8. The width is set to 80 μm, and the first separation groove 8 is operated in the direction along the groove. Then, as shown in FIG. 2C, the distance between the center positions of the first separation groove 8 and the separation groove 10 of the intermediate layer 5 is 40 μm, and the separation groove 10 of the belt-shaped intermediate layer 5 having a width of 80 μm is obtained. It is done.
In addition, when it is difficult to process the width 80 μm of the intermediate layer 5 by laser etching at once, it can be easily processed by performing laser etching with a width of 40 μm twice, for example.
Further, the distance between the centers of the first separation groove 8 and the separation groove 10 of the first intermediate layer 5 can be arbitrarily selected, and the width of the separation groove 10 of the first intermediate layer 5 can also be arbitrarily selected. .
Further, the irradiation direction of the laser beam can be processed not only from the film surface side of the intermediate layer 5 but also from the opposite direction.

Next, as shown in FIG. 2D, the second thin film photoelectric conversion unit 6 is formed on the intermediate layer 5 and in the separation groove 10 of the first intermediate layer 5.
Due to the film formation of the second thin film photoelectric conversion unit 6, the separation groove 10 of the first intermediate layer 5 is made of the material constituting the second thin film photoelectric conversion unit 6 (crystalline silicon film, from the material of the intermediate layer). (Embedded with very high electrical insulation).
The crystalline silicon film formed here is a film having high crystallinity even at the initial film stage of the deposition growth on the intermediate layer 5, but the separation groove of the first intermediate layer 5 is formed. Above 10, there is a tendency for the crystalline silicon film to be filled with an initial film of the deposition growth, that is, an amorphous curtain.

Next, as shown in FIG. 2E, the connection groove 11 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
The connection groove 11 has an opening on the upper surface of the second thin film photoelectric conversion unit 6, and has a bottom surface at the interface between the transparent electrode layer 3 and the first thin film photoelectric conversion unit 4. The groove width is 40 μm to 80 μm, for example, 60 μm.
The distance between the center of the first separation groove 8 and the center of the connection groove 11 is, for example, 110 μm.
Here, the processing conditions for the connection groove 11 are such that the separation member and residue of the intermediate layer 5 generated during laser processing do not remain between the intermediate layer 5 and the side surface 11a of the connection groove 11. Make sure. Further, the side surface 11a of the connection groove 11 is observed with an optical microscope, and it is confirmed that no separation member and residue of the intermediate layer 5 remain.
By confirming that the separation member and the residue of the intermediate layer 5 are not left, the state where the side surface of the separation groove 11 on the connection groove 11 side and one side surface of the connection groove 11 share the same interface is surely realized. it can.
Further, by confirming that the separation member and the residue of the intermediate layer 5 do not remain, it is possible to reliably realize the state where the separation member of the intermediate layer 5 does not remain between the separation groove 10 and the connection groove 11.

Next, as shown in FIG. 2 (f), Ag is formed as a back electrode layer 7 on the second thin film photoelectric conversion unit 6 and in the connection groove 11, for example, with a thickness of 300 nm using a sputtering apparatus (not shown). .
By forming the back electrode 7, the connection groove 11 is filled with a material constituting the back electrode layer 7. As a result, one back electrode layer 7 and the other transparent electrode layer 3 of two adjacent tandem thin film solar cells 12 are electrically connected.

Next, as shown in FIG. 2G, the second separation groove 9 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetition oscillation frequency of 10 KHz, and an average output of 20 W are used.
As shown in FIG. 2G, the second separation groove 9 is provided at a position away from the first separation groove 8, has an opening on the upper surface of the back electrode layer 7, and the transparent electrode A bottom surface is provided at the interface between the layer 3 and the first thin film photoelectric conversion unit 4. The second separation groove has the first and second thin film photoelectric conversion units 4, 6, the intermediate layer 5, and the back electrode layer 7 perpendicular to the paper surface corresponding to the tandem thin film solar cell 12. It is divided in various directions.
The groove width is 40 μm to 80 μm, for example, 60 μm. The distance between the center of the connection groove 11 and the center of the second separation groove 9 is, for example, 70 μm.
In FIG. 2G, the first and second thin film photoelectric conversion units 4 and 6, the intermediate layer 5, and the back electrode layer 7 are processed at the boundary between the connection groove 11 and the second separation groove 9. The rest is not shown. The presence or absence of the remaining processing portion depends on the processing accuracy of the laser etching apparatus. However, even if the remaining processing portion remains, the power generation performance of the integrated multi-junction thin film silicon solar cell module 1 is not affected.

Next, a peripheral groove (not shown) is formed around the transparent substrate 2 by a laser etching apparatus using a pulse oscillation type YAG laser (not shown) to determine a power generation region.
In this case, for example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.

Here, the ratio of the invalid area is as follows. That is, the width of the cell of the strip-shaped tandem-type thin film silicon solar cell constituting the module is, for example, 10 mm, the width of the first separation groove 8 is 40 μm, the width of the second separation groove 9 is 60 μm, Since the distance between the center of the separation groove 8 and the center of the connection groove 11 is 110 μm and the distance between the center of the connection groove 11 and the center of the second separation groove 9 is 70 μm, the total invalid width is 20 μm + 110 μm + 70 μm + 30 μm = 230 μm. Become.
Accordingly, the ineffective area is 2.3% of the area of the band-shaped cell having the width of 10 mm. That is, the invalid area in the case of the technique described in Patent Document 1 is 3.6%, and the invalid area in the case of the technique described in Patent Document 2 is 5.6%. .

In the integrated tandem-type thin film solar cell module 1 related to the first embodiment described above, the first separation groove 8 that separates the transparent electrode 3 and the separation groove 10 of the first intermediate layer 5 are the first separation groove. Since there are portions that are overlapped when viewed in the width direction of 8, that is, because a part or all of their projections as viewed from the normal direction of the surface of the transparent substrate is arranged in a positional relationship where they are superimposed, It is possible to minimize the area that does not contribute to power generation.
Further, the intermediate layer 5 is separated from the connection groove 11 by the separation groove 10 of the first intermediate layer 5, and the crystalline silicon constituting the second thin film photoelectric conversion unit 6 is placed in the separation groove. Since it is embedded, it is possible to prevent the occurrence of leakage current.
That is, according to the first embodiment, a high-efficiency power generation function that suppresses leakage current through the intermediate layer and suppresses an increase in the invalid area at the electrical junction of adjacent tandem thin-film solar cells. It is possible to provide an integrated tandem-type thin film solar cell module including
In addition, since it is possible to further improve the power generation efficiency of the integrated tandem thin film solar cell module, the contribution to the productivity improvement and the reduction of product cost in the thin film silicon solar cell industry is remarkably large.

Next, an integrated tandem-type thin film solar cell module according to a second embodiment of the present invention will be described with reference to FIGS. 3 and 4A to 4G.
FIG. 3 is a structural view schematically showing a cross section of an integrated tandem thin film solar cell module according to the second embodiment of the present invention. FIG. 4A to FIG. 4G are diagrams showing a manufacturing process of the integrated tandem thin film solar cell module according to the second embodiment of the present invention.

3 and 4A to 4G, reference numeral 13 denotes a separation groove of the second intermediate layer, and the side surface 11a of the connection groove 11 and the side surface 8a of the first separation groove 8 are connected to the transparent substrate 2. An opening is formed at the interface between the intermediate layer 5 and the second thin film photoelectric conversion unit 6 in the region outside the surface extending in the normal direction of the upper surface (the direction away from the side surface 11a of the connection groove 11). And a spatial structure having a bottom surface in an intermediate region between the intermediate layer 5 and the transparent electrode layer 3. One side surface 11a of the connection groove 11 and one end surface of the separation groove 13 of the second intermediate layer share the same interface.
The gap 13 in the second intermediate layer is provided between the intermediate layer 5 and the connection groove 11 in a direction perpendicular to the paper surface.
That is, the separation groove 13 of the second intermediate layer is formed between the second thin film photoelectric conversion unit 6 and the intermediate layer 5 between the connection groove 11 and the end of the intermediate layer 5 on the connection groove side. And a separation groove 13 having a bottom surface in an intermediate region between the intermediate layer 5 and the transparent electrode layer 3, and the separation groove 13 of the second intermediate layer and the first separation groove 8 are arranged in a positional relationship in which a part or all of the projections viewed from the normal direction of the surface of the transparent substrate 2 are superposed, and the separation groove 13 of the second intermediate layer is formed in the second intermediate layer. The thin film photoelectric conversion unit 6 is embedded with a material and has a structural feature that the separation member of the intermediate layer 5 does not exist between the separation groove 13 of the two intermediate layers and the connection groove 11.
The separation groove 13 of the second intermediate layer is filled with a crystalline silicon film that constitutes the second thin film photoelectric conversion unit 6. Since this crystalline silicon film has high electrical insulation, the intermediate layer 5 and the connection groove 11 are electrically insulated.
Further, when forming the separation groove 13 of the intermediate layer, as will be described later, it is laser-etched so that no divided portion of the intermediate layer 5 remains between the intermediate layer 5 and the connection groove 11, When the intermediate layer 5 is laser-etched, a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is also deleted. Laser processing residue can be completely removed. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
In addition, since the above-mentioned matter has a division part of the intermediate layer 5 in the prior art, it is difficult to reliably maintain the electrical insulation between the intermediate layer 5 and the connection groove 11 due to the influence. On the other hand, the present invention means that there is no influence because the divided portion of the intermediate layer 5 does not remain.
Reference numerals 2 to 12 are schematic cross-sectional views of the module of the integrated multi-junction thin film silicon solar cell according to the first embodiment of the present invention shown in FIGS. 1 and 2A to 2G. Since it is the same as that shown in FIGS. 1 and 2 (a) to 2 (g), the description is omitted here.

According to the second embodiment of the present invention, the integrated tandem thin-film solar cell module 1 can be manufactured by the following method.
First, a glass having a size of 110 cm × 140 cm × a thickness of 0.5 cm is prepared as the transparent substrate 2, and a SnO 2 film or a ZnO film, for example, an Al-doped ZnO film, for example, is used as the transparent electrode layer 3 on the transparent substrate 2. Alternatively, it is formed by a sputtering apparatus or the like, for example, by a sputtering apparatus (not shown).
Next, the first separation groove 8 shown in FIG. 4A is formed in the transparent electrode layer 3. In the same figure, a portion of reference numeral 8 is parallel to the 110 cm side of the transparent substrate 2 and its center interval, for example, 10 mm, groove width, for example, 40 μm, is not shown in the figure.
It is formed by laser etching using a laser.
For example, 1.06 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 25 KHz, and an average output of 10 W are used.

Next, as shown in FIG. 4B, the first thin film photoelectric conversion unit 4 is formed on the transparent electrode layer 3 by a plasma CVD apparatus (not shown).
By forming the first thin film photoelectric conversion unit 4, the first separation groove 8 formed in the transparent electrode layer 3 is filled with an amorphous silicon-based film constituting the first thin film photoelectric conversion unit 4. . Since this amorphous silicon film has high electrical insulation, the electrical resistance between the transparent electrode layers 3 adjacent to each other separated by the first separation groove 8 is very high.
Next, as shown in FIG. 4B, for example, an Al-doped ZnO film is formed on the first thin film photoelectric conversion unit 4 as a middle layer 5 by a sputtering apparatus (not shown). The intermediate layer 5 has a thickness in the range of 20 nm to 90 nm, for example, 50 nm.

Next, the second intermediate layer separation groove 13 shown in FIG. 4C is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
Here, the laser etching processing conditions are selected so that a divided portion of the intermediate layer 5 does not remain between the intermediate layer 5 and the connection groove 11. That is, when the intermediate layer 5 is laser-etched, a condition in which a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is laser-etched, Conditions are selected so that the laser processing residue of the intermediate layer 5 can be completely removed. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
In addition, the laser processing conditions of the intermediate layer 5 are selected so that no laser processing residue of the intermediate layer 5 is generated, and the electrical resistance between the adjacent intermediate layers 5 across the separation groove 13 is measured by a tester (not shown). It is confirmed that the measured value is 100 KΩ or more, preferably 500 KΩ or more. This measured value is closely related to the shunt resistance, which is an important parameter of the power generation performance of the integrated tandem thin film solar cell module 1 to be manufactured, and has an important meaning in preventing leakage of the generated current. . In addition, when the laser processing residue generated at the time of laser processing is not removed, it is difficult to keep the measured value at 100 KΩ or more.
4C, from the film surface side of the intermediate layer 5, the laser beam of a laser etching apparatus (not shown) is centered at the same position as the center point of the first separation groove 8, for example. The width is set to 80 μm, and the first separation groove 8 is operated in the direction along the groove. Then, as shown in FIG. 4C, a strip-shaped second intermediate layer separation groove 13 having a width of 80 μm and the same center position as the first separation groove 8 is obtained.
In addition, when it is difficult to process the width 80 μm of the intermediate layer 5 by laser etching at once, it can be easily processed by performing laser etching with a width of 40 μm twice, for example.
The distance between the centers of the first separation groove 8 and the separation groove 10 of the second intermediate layer 5 can be arbitrarily selected, and the width of the separation groove 13 of the second intermediate layer can also be arbitrarily selected.
Further, the irradiation direction of the laser beam can be processed not only from the film surface side of the intermediate layer 5 but also from the opposite direction.

Next, as shown in FIG. 4D, the second thin film photoelectric conversion unit 6 is formed on the intermediate layer 5 and in the separation groove 13 of the second intermediate layer.
Due to the film formation of the second thin film photoelectric conversion unit 6, the separation groove 13 of the second intermediate layer 5 is made of the material constituting the second thin film photoelectric conversion unit 6 (crystalline silicon film, from the material of the intermediate layer). (Embedded with very high electrical insulation).

Next, as shown in FIG. 4E, the connection groove 11 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
The connection groove 11 has an opening on the upper surface of the second thin film photoelectric conversion unit 6, and has a bottom surface at the interface between the transparent electrode layer 3 and the first thin film photoelectric conversion unit 4. The groove width is 40 μm to 80 μm, for example, 60 μm.
The distance between the center of the first separation groove 8 and the center of the connection groove 11 is, for example, 70 μm.
Here, the processing conditions for the connection groove 11 are such that the separation member and residue of the intermediate layer 5 generated during laser processing do not remain between the intermediate layer 5 and the side surface 11a of the connection groove 11. Make sure. Further, the side surface 11a of the connection groove 11 is observed with an optical microscope, and it is confirmed that no separation member and residue of the intermediate layer 5 remain.
By confirming that the separation member and the residue of the intermediate layer 5 are not left, the state where the side surface of the separation groove 11 on the connection groove 11 side and one side surface of the connection groove 11 share the same interface is surely realized. it can.
Further, by confirming that the separation member and the residue of the intermediate layer 5 do not remain, it is possible to reliably realize the state where the separation member of the intermediate layer 5 does not remain between the separation groove 10 and the connection groove 11.

Next, as shown in FIG. 4 (f), Ag is formed as a back electrode layer 7 on the second thin film photoelectric conversion unit 6 and in the connection groove 11 by using, for example, a sputtering apparatus (not shown) to a thickness of 300 nm. .
By forming the back electrode 7, the connection groove 11 is filled with a material constituting the back electrode layer 7. As a result, one back electrode layer 7 and the other transparent electrode layer 3 of two adjacent tandem thin film solar cells 12 are electrically connected.

Next, as shown in FIG. 4G, the second separation groove 9 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 20 W are used.
As shown in FIG. 4G, the second separation groove 9 is provided at a position away from the first separation groove 8, has an opening on the upper surface of the back electrode layer 7, and the transparent electrode A bottom surface is provided at the interface between the layer 3 and the first thin film photoelectric conversion unit 4. The second separation groove has the first and second thin film photoelectric conversion units 4, 6, the intermediate layer 5, and the back electrode layer 7 perpendicular to the paper surface corresponding to the tandem thin film solar cell 12. It is divided in various directions.
The groove width is 40 μm to 80 μm, for example, 60 μm. The distance between the center of the connection groove 11 and the center of the second separation groove 9 is, for example, 70 μm.
In FIG. 4G, the first and second thin film photoelectric conversion units 4 and 6, the intermediate layer 5, and the back electrode layer 7 are processed at the boundary between the connection groove 11 and the second separation groove 9. The rest is not shown. The presence or absence of the remaining processing portion depends on the processing accuracy of the laser etching apparatus. However, even if the remaining processing portion remains, the power generation performance of the integrated multi-junction thin film silicon solar cell module 1 is not affected.

Next, a peripheral groove (not shown) is formed around the transparent substrate 2 by a laser etching apparatus using a pulse oscillation type YAG laser (not shown) to determine a power generation region.
In this case, for example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.

Here, the ratio of the invalid area is as follows. That is, the width of the cell of the strip-shaped tandem-type thin film silicon solar battery constituting the module is, for example, 10 mm, the width of the first separation groove 8 is 40 μm, the width of the separation groove 13 of the second intermediate layer is 80 μm, The width of the second separation groove 9 is 60 μm, the distance between the center of the first separation groove 8 and the center of the connection groove 11 is 70 μm, and the distance between the center of the connection groove 11 and the center of the second separation groove 9 is 70 μm. Therefore, the total invalid width is 40 μm + 70 μm + 70 μm + 30 μm = 210 μm.
Therefore, the ineffective area is 2.1% of the area of the band-like cell having the width of 10 mm. That is, the invalid area in the case of the technique described in Patent Document 1 is 3.6%, and the invalid area in the case of the technique described in Patent Document 2 is 5.6%. .

In the integrated tandem-type thin film solar cell module 1 related to the second embodiment described above, the first separation groove 8 that separates the transparent electrode 3 and the separation groove 13 of the second intermediate layer are the first separation groove 8. In other words, they are arranged in a positional relationship in which a part or all of their projections viewed from the normal direction of the surface of the transparent substrate are superimposed, so that they do not contribute to power generation. It is possible to minimize the area.
Further, the intermediate layer 5 is separated from the connection groove 11 by a second intermediate layer separation groove 13, and crystalline silicon constituting the second thin film photoelectric conversion unit 6 is embedded in the separation groove. Therefore, it is possible to prevent the occurrence of leakage current.
That is, according to the second embodiment, a high-efficiency power generation function that suppresses the leakage current through the intermediate layer and suppresses an increase in the invalid area at the electrical junction of adjacent tandem thin-film solar cells. It is possible to provide an integrated tandem-type thin film solar cell module including
In addition, since it is possible to further improve the power generation efficiency of the integrated tandem thin film solar cell module, the contribution to the productivity improvement and the reduction of product cost in the thin film silicon solar cell industry is remarkably large.

Next, an integrated tandem thin film solar cell module according to a third embodiment of the present invention will be described with reference to FIG.
FIG. 5 is a structural diagram schematically showing a cross section of an integrated tandem-type thin film solar cell module according to the third embodiment of the present invention.

In FIG. 5, reference numeral 14 denotes a separation groove of the third intermediate layer, which has an opening at the interface between the intermediate layer 5 and the second thin film photoelectric conversion unit 6, and the intermediate layer 5 and the transparent electrode Spatial structure having a bottom surface in an intermediate region with the layer 3 and surrounding the two side surfaces 8a and 8b of the first separation groove 8 with a surface extending in the normal direction of the top surface of the transparent substrate 2 Have The side surface 11a of the connection groove 11 and one end surface of the gap 14 of the third intermediate layer share the same interface.
The separation groove 14 of the third intermediate layer is provided between the intermediate layer 5 and the connection groove 11 in a direction perpendicular to the paper surface.
That is, the separation groove 14 of the third intermediate layer is formed between the second thin film photoelectric conversion unit 6 and the intermediate layer 5 between the connection groove 11 and the end of the intermediate layer 5 on the connection groove side. And a separation groove 14 having a bottom surface in an intermediate region between the intermediate layer 5 and the transparent electrode layer 3, and the separation groove 14 of the third intermediate layer and the first separation groove 8 are arranged in a positional relationship in which a part or all of the projections seen from the normal direction of the surface of the transparent substrate 2 are overlapped, and the separation groove 14 of the third intermediate layer is formed in the second intermediate layer. It is embedded in the material constituting the thin film photoelectric conversion unit 6 and has a structural feature that no separation member of the intermediate layer 5 exists between the separation groove 14 of the third intermediate layer and the connection groove 11. .
The separation groove 14 of the third intermediate layer is filled with a crystalline silicon-based film constituting the second thin film photoelectric conversion unit 6. Since this crystalline silicon film has high electrical insulation, the intermediate layer 5 and the connection groove 11 are electrically insulated.
Further, when forming the separation groove 14 of the intermediate layer, as will be described later, laser etching is performed so that a divided portion of the intermediate layer 5 does not remain between the intermediate layer 5 and the connection groove 11, When the intermediate layer 5 is laser-etched, a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is also deleted. Laser processing residue can be completely removed. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
In addition, since the above-mentioned matter has a division part of the intermediate layer 5 in the prior art, it is difficult to reliably maintain the electrical insulation between the intermediate layer 5 and the connection groove 11 due to the influence. On the other hand, the present invention means that there is no influence because the divided portion of the intermediate layer 5 does not remain.
Further, as will be described later, the distance between one end face of the third intermediate layer separation groove 14 and one end face of the second separation groove is, for example, a width of 40 μm of the first separation groove 8 and a connection groove. Since the width can be set to 60 μm and the width of the second separation groove 9 can be set to 60 μm, the width of the ineffective area is 40 μm + 60 μm + 60 μm = 140 μm. It can be made shorter than in the case of a battery module.
Reference numerals 2 to 12 are schematic cross-sectional views of the module of the integrated multi-junction thin film silicon solar cell according to the first embodiment of the present invention shown in FIGS. 1 and 2A to 2G. Since it is the same as that shown in FIGS. 1 and 2 (a) to 2 (g), the description is omitted here.

According to the third embodiment of the present invention, the integrated tandem-type thin film solar cell module 1 can be manufactured by the following method.
First, a glass having a size of 110 cm × 140 cm × a thickness of 0.5 cm is prepared as the transparent substrate 2, and a SnO 2 film or a ZnO film, for example, an Al-doped ZnO film, for example, is used as the transparent electrode layer 3 on the transparent substrate 2. Alternatively, it is formed by a sputtering apparatus or the like, for example, by a sputtering apparatus (not shown).
Next, the first separation groove 8 shown in FIG. 5 is formed in the transparent electrode layer 3. In the figure, a portion denoted by reference numeral 8 is formed by laser etching using a pulse oscillation type YAG laser (not shown) at a center interval, for example, 10 mm and a groove width, for example, 40 μm, in parallel with the 110 cm side of the transparent substrate 2. .
For example, 1.06 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetition oscillation frequency of 25 KHz, and an average output of 10 W are used.

Next, the first thin film photoelectric conversion unit 4 shown in FIG. 5 is formed on the transparent electrode layer 3 by a plasma CVD apparatus (not shown).
By forming the first thin film photoelectric conversion unit 4, the first separation groove 8 formed in the transparent electrode layer 3 is filled with an amorphous silicon-based film constituting the first thin film photoelectric conversion unit 4. . Since this amorphous silicon film has high electrical insulation, the electrical resistance between the transparent electrode layers 3 adjacent to each other separated by the first separation groove 8 is very high.
Next, for example, an Al-doped ZnO film is formed on the first thin film photoelectric conversion unit 4 as the intermediate layer 5 shown in FIG. 5 by a sputtering apparatus (not shown). The intermediate layer 5 has a thickness in the range of 20 nm to 90 nm, for example, 50 nm.

Next, the third intermediate layer separation groove 14 shown in FIG. 5 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
Here, the laser etching processing conditions are selected so that a divided portion of the intermediate layer 5 does not remain between the intermediate layer 5 and the connection groove 14. That is, when the intermediate layer 5 is laser-etched, a part of the first thin film photoelectric conversion unit 4 in the intermediate region between the intermediate layer 5 and the transparent electrode layer 3 is also deleted, and the intermediate layer 5 Select the conditions that can completely remove the laser processing residue. As a result, electrical insulation between the intermediate layer 5 and the connection groove 11 can be reliably maintained.
Further, the laser processing conditions for the intermediate layer 5 are selected so that no laser processing residue of the intermediate layer 5 is generated, and the electrical resistance between the adjacent intermediate layers 5 is measured with a tester (not shown) across the separation groove 14. It is confirmed that the measured value is 100 KΩ or more, preferably 500 KΩ or more. This measured value is closely related to the shunt resistance, which is an important parameter of the power generation performance of the integrated tandem thin film solar cell module 1 to be manufactured, and has an important meaning in preventing leakage of the generated current. . In addition, when the laser processing residue generated at the time of laser processing is not removed, it is difficult to keep the measured value at 100 KΩ or more.
In FIG. 5, from the film surface side of the intermediate layer 5, the laser beam of a laser etching apparatus (not shown) is centered at the same position as, for example, the center point of the first separation groove 8, and the width of the laser beam is The first separation groove 8 is operated in the direction along the groove of the first separation groove 8 with the same width as in the case of the first separation groove 8, here 40 μm. Then, as shown in FIG. 5, a strip-shaped third intermediate layer separation groove 14 having a width of 40 μm and the same central position as the first separation groove 8 is obtained.
The laser beam can be processed not only from the film surface side of the intermediate layer 5 but also from the opposite direction.

Next, the second thin film photoelectric conversion unit 6 is formed on the intermediate layer 5 illustrated in FIG. 5 and in the separation groove 14 of the third intermediate layer.
Due to the film formation of the second thin film photoelectric conversion unit 6, the separation groove 14 of the third intermediate layer 5 is made of the material constituting the second thin film photoelectric conversion unit 6 (crystalline silicon film, from the material of the intermediate layer). (Embedded with very high electrical insulation).

Next, the connection groove 11 shown in FIG. 5 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.
The connection groove 11 has an opening on the upper surface of the second thin film photoelectric conversion unit 6, and has a bottom surface at the interface between the transparent electrode layer 3 and the first thin film photoelectric conversion unit 4.
The groove width is 40 μm to 80 μm in the previous period, for example, 60 μm.
The distance between the center of the first separation groove 8 and the center of the connection groove 11 is such that there is a gap between one end surface of the separation groove 14 of the third intermediate layer and one side surface 11a of the connection groove 11. For example, the thickness is set to 50 μm.

Next, as the back electrode layer 7 illustrated in FIG. 5, for example, Ag is formed on the second thin film photoelectric conversion unit 6 and the connection groove 11 with a thickness of 300 nm using, for example, a sputtering apparatus (not illustrated).
By forming the back electrode 7, the connection groove 11 is filled with a material constituting the back electrode layer 7. As a result, one back electrode layer 7 and the other transparent electrode layer 3 of two adjacent tandem thin film solar cells 12 are electrically connected.

Next, the second separation groove 9 shown in FIG. 5 is formed by a laser etching apparatus using a pulse oscillation type YAG laser (not shown).
For example, 0.532 μm is selected as the wavelength of the laser. For the laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 20 W are used.
As shown in FIG. 5, the second separation groove 9 is provided at a position away from the first separation groove 8, has an opening on the upper surface of the back electrode layer 7, and the transparent electrode layer 3. It has a bottom surface at the interface with the first thin film photoelectric conversion unit 4. The second separation groove has the first and second thin film photoelectric conversion units 4, 6, the intermediate layer 5, and the back electrode layer 7 perpendicular to the paper surface corresponding to the tandem thin film solar cell 12. It is divided in various directions.
The groove width is 40 μm to 80 μm, for example, 60 μm. The distance between the center of the connection groove 11 and the center of the second separation groove 9 is, for example, 70 μm.
In FIG. 5, the remaining processing portions of the first and second thin film photoelectric conversion units 4 and 6, the intermediate layer 5, and the back electrode layer 7 are present at the boundary between the connection groove 11 and the second separation groove 9. Not shown. The presence or absence of the remaining processing portion depends on the processing accuracy of the laser etching apparatus. However, even if the remaining processing portion remains, the power generation performance of the integrated multi-junction thin film silicon solar cell module 1 is not affected.

Next, a peripheral groove (not shown) is formed around the transparent substrate 2 by a laser etching apparatus using a pulse oscillation type YAG laser (not shown) to determine a power generation region.
In this case, for example, 0.532 μm is selected as the wavelength of the laser. For laser output, a processing test is performed in advance, and conditions selected by the data, for example, a pulse width of 35 ns, a repetitive oscillation frequency of 10 KHz, and an average output of 15 W are used.

Here, the ratio of the invalid area is as follows. That is, the width of the cell of the strip-shaped multi-junction thin film silicon solar cell constituting the module is, for example, 10 mm, the width of the first separation groove 8 is 40 μm, the width of the second separation groove 9 is 60 μm, Since the distance between the center of the separation groove 8 and the center of the connection groove 11 is 50 μm and the distance between the center of the connection groove 11 and the center of the second separation groove 9 is 70 μm, the total width of the ineffective region is 20 μm + 50 μm + 70 μm + 30 μm = 170 μm. It becomes.
Therefore, the invalid area is 1.7% of the area of the band-shaped cell having the width of 10 mm. That is, the invalid area in the case of the technique described in Patent Document 1 is 3.6%, and the invalid area in the case of the technique described in Patent Document 2 is 5.6%. .

In the integrated tandem-type thin film solar cell module 1 relating to the third embodiment described above, the first separation groove 8 for separating the transparent electrode 3 and the separation groove 14 for the third intermediate layer are formed by the first separation groove 8. In other words, they are arranged in a positional relationship in which a part or all of their projections viewed from the normal direction of the surface of the transparent substrate are superimposed, so that they do not contribute to power generation. It is possible to minimize the area.
Further, the intermediate layer 5 is separated from the connection groove 11 by the third intermediate layer separation groove 14, and the crystalline silicon constituting the second thin film photoelectric conversion unit 6 is embedded in the gap. Therefore, it is possible to prevent the occurrence of leakage current.
That is, according to the third embodiment, a high-efficiency power generation function that suppresses a leakage current through the intermediate layer and suppresses an increase in an invalid area at an electrical junction of adjacent tandem thin-film solar cells. It is possible to provide an integrated tandem-type thin film solar cell module including
In addition, since it is possible to further improve the power generation efficiency of the integrated tandem thin film solar cell module, the contribution to the productivity improvement and the reduction of product cost in the thin film silicon solar cell industry is remarkably large.

According to the first, second, and third embodiments of the present invention described above, the integrated tandem-type thin film solar cell module of the present invention has an intermediate layer separated between the intermediate layer and the connection groove constituting the integrated tandem thin film solar cell module. A groove is provided, and the separation groove provided in the intermediate layer and the separation groove provided in the transparent electrode are arranged so as to overlap each other in the normal direction of the transparent electrode surface, and the transparent The separation groove of the electrode is an amorphous silicon film, and the gap between the intermediate layers is filled with an initial film of the deposition growth of the crystalline silicon film.
As a result, an integrated tandem thin-film solar having a high-efficiency power generation function in which leakage current through the intermediate layer is suppressed and an increase in ineffective area at an electrical junction of adjacent tandem thin-film solar cells is suppressed The battery module and the manufacturing method thereof can be provided.

1 is a structural diagram schematically showing a cross section of an integrated tandem thin film solar cell module according to a first embodiment of the present invention. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of the 1st isolation | separation groove | channel. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of a 1st thin film photoelectric conversion unit, and formation of an intermediate film. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of the clearance gap between intermediate films. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of a 2nd thin film photoelectric conversion unit. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of a connection groove | channel. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of a back surface electrode. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 1st Embodiment of this invention: Formation of a 2nd isolation | separation groove | channel. FIG. 5 is a structural diagram schematically showing a cross section of an integrated tandem thin film solar cell module according to a second embodiment of the present invention. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of the 1st isolation | separation groove | channel. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of a 1st thin film photoelectric conversion unit, and formation of an intermediate film. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of the clearance gap between intermediate films. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of a 2nd thin film photoelectric conversion unit. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of a connection groove | channel. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of a back surface electrode. The figure which shows the manufacturing process of the integrated tandem-type thin film solar cell module concerning the 2nd Embodiment of this invention: Formation of a 2nd isolation | separation groove | channel. FIG. 6 is a structural diagram schematically showing a cross section of an integrated tandem thin film solar cell module according to a third embodiment of the present invention.

Explanation of symbols

1 Integrated tandem thin-film solar cell module,
2 Transparent substrate,
3 transparent electrode layers,
4 a first thin film photoelectric conversion unit comprising an amorphous photoelectric conversion layer,
5 middle class,
6 a second thin film photoelectric conversion unit comprising a crystalline photoelectric conversion layer,
7 Back electrode layer,
8 first separation groove,
9 Second separation groove,
10 Separation groove of the first intermediate layer,
11 Connection groove,
12 tandem thin film solar cells,
13 Separation groove 14 of second intermediate layer 14 Separation groove of third intermediate layer

Claims (5)

  A transparent electrode layer sequentially laminated on a transparent substrate, a first thin film photoelectric conversion unit including an amorphous photoelectric conversion layer, and an intermediate layer having conductivity and light transmission and light reflection And a second thin film photoelectric conversion unit having a crystalline photoelectric conversion layer, a back electrode layer, an opening at the interface between the transparent electrode layer and the first thin film photoelectric conversion unit, and the transparent electrode layer And a first separation groove having a bottom surface at the interface between the transparent substrate, an opening at the interface between the back electrode layer and the second thin film photoelectric conversion unit, and the first thin film photoelectric conversion unit and the transparent electrode. A connection groove having a bottom surface at the interface of the layer and filled with a material constituting the back electrode layer; and an opening on the upper surface of the back electrode layer at a position away from the connection groove; There is a bottom surface at the interface between the first thin film photoelectric conversion unit and the transparent electrode layer. In the integrated tandem thin film solar cell module, in which a plurality of tandem thin film solar cells composed of the second separation grooves are juxtaposed and electrically connected in series to each other, the connection of the intermediate layer Between the end on the groove side and the connection groove, there is an opening at the interface between the second thin film photoelectric conversion unit and the intermediate layer, and a bottom surface in the intermediate region between the intermediate layer and the transparent electrode layer. A positional relationship in which a third separation groove is provided, and the third separation groove and the first separation groove are superposed on a part or all of their projections as viewed from the normal direction of the surface of the transparent substrate. And the third separation groove is embedded with a material constituting the second thin film photoelectric conversion unit, and the intermediate layer separation member is interposed between the third separation groove and the connection groove. Characterized by having a structure that does not exist Integrated tandem-type thin film solar cell module that.   A transparent electrode layer sequentially laminated on a transparent substrate, a first thin film photoelectric conversion unit including an amorphous photoelectric conversion layer, and an intermediate layer having conductivity and light transmission and light reflection And a second thin film photoelectric conversion unit having a crystalline photoelectric conversion layer, a back electrode layer, an opening at the interface between the transparent electrode layer and the first thin film photoelectric conversion unit, and the transparent electrode layer And a first separation groove having a bottom surface at the interface between the transparent substrate, an opening at the interface between the back electrode layer and the second thin film photoelectric conversion unit, and the first thin film photoelectric conversion unit and the transparent electrode. A connection groove having a bottom surface at the interface of the layer and filled with a material constituting the back electrode layer; and an opening on the upper surface of the back electrode layer at a position away from the connection groove; There is a bottom surface at the interface between the first thin film photoelectric conversion unit and the transparent electrode layer. In the integrated tandem thin film solar cell module, in which a plurality of tandem thin film solar cells composed of the second separation grooves are juxtaposed and electrically connected in series to each other, the connection of the intermediate layer Between the end on the groove side and the connection groove, there is an opening at the interface between the second thin film photoelectric conversion unit and the intermediate layer, and a bottom surface in the intermediate region between the intermediate layer and the transparent electrode layer. A third separation groove is provided, and the third separation groove is embedded with a material constituting the second thin film photoelectric conversion unit, and the intermediate between the third separation groove and the connection groove. An integrated tandem-type thin film solar cell module having a structure in which no layer separation member is present.   The intermediate layer includes at least one selected from oxides of zinc oxide (ZnO), tin oxide (SnO 2), indium tin oxide (ITO), titanium oxide (TiO 2), and aluminum oxide (Al 2 O 3). Alternatively, the integrated tandem thin film solar cell module according to 2.   The method for producing an integrated tandem thin film solar cell module according to claim 1 or 2, wherein a step of forming a transparent electrode layer on the transparent substrate, a step of forming the first separation groove, Forming a first thin film photoelectric conversion unit on the transparent electrode layer and in the first separation groove; forming an intermediate layer on the first thin film photoelectric conversion unit; and the third separation groove. A step of forming a second thin film photoelectric conversion unit on the intermediate layer and the third separation groove, a step of forming the connection groove, and a second thin film photoelectric conversion unit. The method includes a step of forming a back electrode on the upper portion and the connection groove, and a step of forming the second separation groove, and a side surface of the third separation groove on the connection groove side and one side surface of the connection groove. To process to share the same interface Integrated tandem-type thin film solar cell module manufacturing method according to symptoms.   The method for producing an integrated tandem thin film solar cell module according to claim 1 or 2, wherein a step of forming a transparent electrode layer on the transparent substrate, a step of forming the first separation groove, Forming a first thin film photoelectric conversion unit on the transparent electrode layer and in the first separation groove; forming an intermediate layer on the first thin film photoelectric conversion unit; and the third separation groove. A step of forming a second thin film photoelectric conversion unit on the intermediate layer and the third separation groove, a step of forming the connection groove, and a second thin film photoelectric conversion unit. The method includes a step of forming a back electrode in the upper portion and the connection groove, and a step of forming the second separation groove. When laser processing the third separation groove, the third separation groove and the The intermediate layer separation member remains between the connection grooves. Integrated tandem-type thin film solar cell module manufacturing method which is characterized in that the odd.

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