JP2000058838A5 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- JP2000058838A5 JP2000058838A5 JP1998221985A JP22198598A JP2000058838A5 JP 2000058838 A5 JP2000058838 A5 JP 2000058838A5 JP 1998221985 A JP1998221985 A JP 1998221985A JP 22198598 A JP22198598 A JP 22198598A JP 2000058838 A5 JP2000058838 A5 JP 2000058838A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- region
- semiconductor film
- crystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims 95
- 238000004519 manufacturing process Methods 0.000 title claims 16
- 230000003197 catalytic effect Effects 0.000 claims 19
- 238000000034 method Methods 0.000 claims 16
- 238000002425 crystallisation Methods 0.000 claims 13
- 230000008025 crystallization Effects 0.000 claims 13
- 239000012535 impurity Substances 0.000 claims 13
- 230000001678 irradiating effect Effects 0.000 claims 13
- 230000001737 promoting effect Effects 0.000 claims 11
- 238000009413 insulation Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 6
- 229910052698 phosphorus Inorganic materials 0.000 claims 6
- 239000011574 phosphorus Substances 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- 239000003054 catalyst Substances 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
Claims (16)
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: forming an insulating film.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜をパターニングして、前記結晶性半導体膜の端面と前記第And patterning the insulating film to form an end face of the crystalline semiconductor film and the first 11 の絶縁膜の端面とを一致させ、Match the end face of the insulation film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: forming an insulating film.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜をパターニングして、前記結晶性半導体膜の端面と前記第And patterning the insulating film to form an end face of the crystalline semiconductor film and the first 11 の絶縁膜の端面とを一致させ、Match the end face of the insulation film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成し、An insulating film of
前記第２の絶縁膜上にゲート配線を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising forming a gate wiring over the second insulating film.
前記下地膜上に非晶質を有する半導体膜と第1の絶縁膜とを大気にさらすことなく形成し、
前記第1の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、
前記結晶性半導体膜及び前記第1の絶縁膜をパターニングして、前記結晶性半導体膜の端面と前記第1の絶縁膜の端面とを一致させ、
前記結晶性半導体膜及び前記第1の絶縁膜上に第2の絶縁膜を形成し、
前記第２の絶縁膜上にゲート配線を形成し、
前記第1の絶縁膜と前記第2の絶縁膜とを同じ形状にすることを特徴とする半導体装置の作製方法。 To contact a catalytic element which promotes crystallization to at least a portion of the base film having an insulating surface,
Forming the amorphous semiconductor film and the first insulating film on the base film without exposing to the atmosphere,
After crystallizing the amorphous semiconductor film by irradiating infrared light or ultraviolet light through the first insulating film to obtain a crystalline semiconductor film ,
Patterning the crystalline semiconductor film and the first insulating film, is matched with the end face of the an end surface of the crystalline semiconductor film a first insulating film,
A second insulating film formed on the crystalline semiconductor film and the first insulating film,
Forming a gate wiring on the second insulating film;
The method for manufacturing a semiconductor device, characterized by said first insulating film and the second insulating film and the same shape.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第２の絶縁膜を形成し、Forming a second insulating film on the insulating film;
前記結晶性半導体膜にソース領域とドレイン領域とを形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein a source region and a drain region are formed in the crystalline semiconductor film.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成し、An insulating film of
前記結晶性半導体膜の一部にリンのドーピングを行うことにより不純物領域を形成し、Impurity regions are formed by doping phosphorus into part of the crystalline semiconductor film,
加熱処理を施し、前記不純物領域に前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalyst element into the impurity region.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第２の絶縁膜を形成し、Forming a second insulating film on the insulating film;
前記結晶性半導体膜の一部にリンのドーピングを行うことによりソース領域とドレイン領域とを形成し、A source region and a drain region are formed by doping phosphorus into a part of the crystalline semiconductor film,
加熱処理を施し、前記ソース領域と前記ドレイン領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalytic element into the source region and the drain region.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成し、An insulating film of
前記結晶性半導体膜の一部にリンのドーピングを行うことにより不純物領域を形成し、Impurity regions are formed by doping phosphorus into part of the crystalline semiconductor film,
前記不純物領域にボロンのドーピングを行うことによりソース領域とドレイン領域とを形成し、A source region and a drain region are formed by doping boron in the impurity region,
加熱処理を施し、前記ソース領域と前記ドレイン領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalytic element into the source region and the drain region.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第１の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After crystallizing the amorphous semiconductor film by irradiating infrared light or ultraviolet light through the first insulating film to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成し、An insulating film of
前記第Said 11 の絶縁膜と前記第The insulating film and the first 22 の絶縁膜とを選択的に除去して、ソース領域となるべき領域とドレイン領域となるべき領域とを露呈させ、The insulating film is selectively removed to expose the region to be the source region and the region to be the drain region,
前記ソース領域となるべき領域と前記ドレイン領域となるべき領域とにリンのドーピングを行うことにより不純物領域を形成し、 Impurity regions are formed by doping phosphorus into the region to be the source region and the region to be the drain region,
加熱処理を施し、前記不純物領域に前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalyst element into the impurity region.
前記下地膜上に非晶質を有する半導体膜と第1の絶縁膜とを大気にさらすことなく形成し、
前記第1の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、
前記結晶性半導体膜及び前記第1の絶縁膜上に第２の絶縁膜を形成し、
前記第1の絶縁膜と前記第2の絶縁膜とを選択的に除去して、ソース領域となるべき領域とドレイン領域となるべき領域とを露呈させ、
前記ソース領域となるべき領域と前記ドレイン領域となるべき領域とにリンのドーピングを行うことによりソース領域とドレイン領域とを形成し、
加熱処理を施し、前記ソース領域と前記ドレイン領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。 To contact a catalytic element which promotes crystallization to at least a portion of the base film having an insulating surface,
Forming the amorphous semiconductor film and the first insulating film on the base film without exposing to the atmosphere,
After crystallizing the amorphous semiconductor film by irradiating infrared light or ultraviolet light through the first insulating film to obtain a crystalline semiconductor film ,
A second insulating film formed before Symbol crystalline semiconductor film and the first insulating film,
And it said before and Symbol first insulating film a second insulating film is selectively removed, to expose a region to become the region and the drain region to be a source region,
Said doped region Toniri down to the source region and becomes to region and serving as the drain region to form a source region and a drain region by a row Ukoto,
A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalytic element into the source region and the drain region .
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a crystalline semiconductor film,
前記結晶性半導体膜及び前記第The crystalline semiconductor film and the first 11 の絶縁膜上に第On the insulation film 22 の絶縁膜を形成し、An insulating film of
前記第Said 11 の絶縁膜と前記第The insulating film and the first 22 の絶縁膜とを選択的に除去して、ソース領域となるべき領域とドレイン領域となるべき領域とを露呈させ、The insulating film is selectively removed to expose the region to be the source region and the region to be the drain region,
前記ソース領域となるべき領域と前記ドレイン領域となるべき領域とにリンのドーピングを行うことにより不純物領域を形成し、Impurity regions are formed by doping phosphorus into the region to be the source region and the region to be the drain region,
前記不純物領域にボロンのドーピングを行うことによりソース領域とドレイン領域とを形成し、A source region and a drain region are formed by doping boron in the impurity region,
加熱処理を施し、前記ソース領域と前記ドレイン領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalytic element into the source region and the drain region.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して第１の結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a first crystalline semiconductor film,
前記第１の結晶性半導体膜と前記第１の絶縁膜とをパターニングすることにより第２の結晶性半導体膜、第２の絶縁膜、第３の結晶性半導体膜及び第３の絶縁膜を形成し、A second crystalline semiconductor film, a second insulating film, a third crystalline semiconductor film, and a third insulating film are formed by patterning the first crystalline semiconductor film and the first insulating film. And
前記第２の結晶性半導体膜、前記第２の絶縁膜、前記第３の結晶性半導体膜及び前記第３の絶縁膜上に第４の絶縁膜を形成し、Forming a fourth insulating film on the second crystalline semiconductor film, the second insulating film, the third crystalline semiconductor film, and the third insulating film;
前記第２の結晶性半導体膜及び前記第３の結晶性半導体膜のそれぞれ一部にリンのドーピングを行うことにより第１の不純物領域と第２の不純物領域とを形成し、Forming a first impurity region and a second impurity region by doping phosphorus into a part of each of the second crystalline semiconductor film and the third crystalline semiconductor film;
前記第２の結晶性半導体膜上及び前記第２の絶縁膜上にマスクを形成し、Forming a mask on the second crystalline semiconductor film and the second insulating film;
前記第２の不純物領域にボロンのドーピングを行い、Doping the second impurity region with boron;
加熱処理を施し、前記第１の不純物領域と前記第２の不純物領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein heat treatment is performed to getter the catalytic element into the first impurity region and the second impurity region.
前記下地膜上に非晶質を有する半導体膜と第A semiconductor film having an amorphous structure on the base film and a first film 11 の絶縁膜とを大気にさらすことなく形成し、Without exposing the insulating film to the atmosphere,
前記第Said 11 の絶縁膜を介して赤外光または紫外光を照射することにより前記非晶質を有する半導体膜を結晶化して第１の結晶性半導体膜を得た後、After irradiating infrared light or ultraviolet light through the insulating film, the amorphous semiconductor film is crystallized to obtain a first crystalline semiconductor film,
前記第１の結晶性半導体膜と前記第１の絶縁膜とを第２の結晶性半導体膜と第２の絶縁膜及び第３の結晶性半導体膜と第３の絶縁膜とにパターニングし、Patterning the first crystalline semiconductor film and the first insulating film into a second crystalline semiconductor film, a second insulating film, a third crystalline semiconductor film, and a third insulating film;
前記第２の結晶性半導体膜と前記第２の絶縁膜及び前記第３の結晶性半導体膜と前記第３の絶縁膜上に第４の絶縁膜を形成し、Forming a fourth insulating film on the second crystalline semiconductor film, the second insulating film, the third crystalline semiconductor film, and the third insulating film;
前記第２の絶縁膜と前記第３の絶縁膜と前記第４の絶縁膜とを選択的に除去して、前記第２の結晶性半導体膜の第１のソース領域となるべき領域と第１のドレイン領域となるべき領域と前記第３の結晶性半導体膜の第２のソース領域となるべき領域と第２のドレイン領域となるべき領域とを露呈させ、The second insulating film, the third insulating film, and the fourth insulating film are selectively removed to form a first source region of the second crystalline semiconductor film and a first Exposing a region to be a drain region, a region to be a second source region of the third crystalline semiconductor film, and a region to be a second drain region,
前記第１のソース領域となるべき領域と前記第１のドレイン領域となるべき領域と前記第２のソース領域となるべき領域と前記第２のドレイン領域となるべき領域とにリンのドーピングを行うことにより、前記第１のソース領域となるべき領域と前記第１のドレイン領域となるべき領域とに第１のソース領域と第１のドレイン領域とを形成し、Phosphorous doping is performed on the region to be the first source region, the region to be the first drain region, the region to be the second source region, and the region to be the second drain region. Thus, forming a first source region and a first drain region in a region to be the first source region and a region to be the first drain region,
前記第２の結晶性半導体膜上及び前記第２の絶縁膜上にマスクを形成し、Forming a mask on the second crystalline semiconductor film and the second insulating film;
前記第２のソース領域となるべき領域と前記第２のドレイン領域となるべき領域にボロンのドーピングを行うことにより第２のソース領域と第２のドレイン領域とを形成し、Forming a second source region and a second drain region by doping boron into the region to be the second source region and the region to be the second drain region;
加熱処理を施し、前記第１のソース領域と前記第１のドレイン領域と前記第２のソース領域と前記第２のドレイン領域とに前記触媒元素をゲッタリングさせることを特徴とする半導体装置の作製方法。Heat treatment is performed so that the catalytic element is gettered into the first source region, the first drain region, the second source region, and the second drain region. Method.
プラズマ酸化を用いることにより前記第１の絶縁膜を形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the first insulating film is formed by using plasma oxidation.
前記非晶質を有する半導体膜を溶融させることなく前記非晶質を有する半導体膜を結晶化させることにより、前記結晶性半導体膜を得ることを特徴とする半導体装置の作製方法。In any one of Claims 1 thru | or 14 ,
The method for manufacturing a semiconductor film by crystallizing, and obtaining said crystalline semiconductor film semiconductors devices having an amorphous without melting the semiconductor film having a front Symbol amorphous.
前記触媒元素は、Ｎｉ、Ｆｅ、Ｃｏ、Ｐｔ、Ｃｕ、Ａｕ、Ｇｅから選ばれた少なくとも一つの元素を用いることを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the catalyst element is at least one element selected from Ni, Fe, Co, Pt, Cu, Au, and Ge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10221985A JP2000058838A (en) | 1998-08-05 | 1998-08-05 | Semiconductor device provided with semiconductor circuit composed of semiconductor element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10221985A JP2000058838A (en) | 1998-08-05 | 1998-08-05 | Semiconductor device provided with semiconductor circuit composed of semiconductor element and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000058838A JP2000058838A (en) | 2000-02-25 |
| JP2000058838A5 true JP2000058838A5 (en) | 2005-10-27 |
Family
ID=16775278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10221985A Withdrawn JP2000058838A (en) | 1998-08-05 | 1998-08-05 | Semiconductor device provided with semiconductor circuit composed of semiconductor element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000058838A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4766758B2 (en) * | 2001-02-28 | 2011-09-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4831885B2 (en) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP6068767B2 (en) * | 2016-02-03 | 2017-01-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
1998
- 1998-08-05 JP JP10221985A patent/JP2000058838A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3717634B2 (en) | Method for manufacturing semiconductor device | |
| JP3844566B2 (en) | Method for manufacturing semiconductor device | |
| JP2000058839A5 (en) | Semiconductor devices and their manufacturing methods | |
| KR100513143B1 (en) | A method of manufacturing a transistor | |
| JPH05109737A (en) | Manufacture of thin film transistor | |
| KR19980032907A (en) | Crystalline Semiconductor Manufacturing Method | |
| JP2003163221A5 (en) | ||
| KR950021777A (en) | Semiconductor device and manufacturing method thereof | |
| JP2006054416A (en) | Thin film transistor and manufacturing method therefor | |
| JP2003017500A5 (en) | Semiconductor device, method for manufacturing the same, and electronic apparatus including the same | |
| JP2003124114A5 (en) | ||
| JP2000039628A5 (en) | Manufacturing method of semiconductor display device | |
| JP2000003875A5 (en) | ||
| JP2000058838A5 (en) | Manufacturing method of semiconductor device | |
| JP2000133594A5 (en) | ||
| JP2000208777A5 (en) | Semiconductor devices, their manufacturing methods, and electronic devices | |
| JP2000252474A5 (en) | ||
| JP2000183360A5 (en) | Manufacturing method of semiconductor device | |
| JP2001250777A5 (en) | ||
| JP2001319877A5 (en) | ||
| JP2000228526A5 (en) | Manufacturing method of semiconductor device | |
| JPH0974205A (en) | Thin film transistor and manufacture thereof | |
| JP2001352073A5 (en) | ||
| JP3587292B2 (en) | Method for manufacturing semiconductor device | |
| JP4115590B2 (en) | Method for manufacturing semiconductor device |