JP2000049387A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2000049387A JP2000049387A JP10210605A JP21060598A JP2000049387A JP 2000049387 A JP2000049387 A JP 2000049387A JP 10210605 A JP10210605 A JP 10210605A JP 21060598 A JP21060598 A JP 21060598A JP 2000049387 A JP2000049387 A JP 2000049387A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- light
- refractive index
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光素子を樹脂に
よって封止した半導体発光装置に係り、特に発光素子か
ら樹脂を抜ける発光の透過性を向上させて高発光輝度を
得る半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device in which a light emitting element is sealed with a resin, and more particularly, to a semiconductor light emitting device which obtains high light emission luminance by improving the transmittance of light emitted from the light emitting element through the resin.
【０００２】[0002]
【従来の技術】結晶基板の上に成長させた半導体層によ
りｐ−ｎ接合を形成し、この接合域を発光層とするＬＥ
Ｄチップを備えた半導体発光装置が、各種の光学ディス
プレイに利用されている。この半導体発光装置の例とし
ては、たとえばＧａＮ，ＧａＡｌＮ，ＩｎＧａＮ及びＩ
ｎＡｌＧａＮ等の窒化ガリウム系化合物半導体を用いた
可視光発光デバイスや高温動作電子デバイスがあり、青
色発光ダイオードの分野での展開が進んでいる。2. Description of the Related Art A pn junction is formed by a semiconductor layer grown on a crystal substrate, and an LE is used as a light emitting layer in this junction region.
Semiconductor light emitting devices having a D chip are used for various optical displays. Examples of this semiconductor light emitting device include, for example, GaN, GaAlN, InGaN, and IGaN.
There are visible light emitting devices and high-temperature operating electronic devices using gallium nitride based compound semiconductors such as nAlGaN, and the development in the field of blue light emitting diodes is progressing.
【０００３】ＬＥＤチップを発光素子として備える半導
体発光装置は、リードフレームの発光面側にＬＥＤチッ
プを搭載して、ＬＥＤチップとリードフレームとをワイ
ヤボンディングにより電気的に接続し、更に、発光素子
の保護及びレンズ機能も兼ねた樹脂によって封止されて
いる。このような従来の半導体発光装置の基本構成につ
いて図面を用いて説明する。A semiconductor light emitting device having an LED chip as a light emitting element has an LED chip mounted on a light emitting surface side of a lead frame, electrically connects the LED chip and the lead frame by wire bonding, and further includes a light emitting element. It is sealed with a resin that also has protection and a lens function. The basic configuration of such a conventional semiconductor light emitting device will be described with reference to the drawings.
【０００４】図３は従来の半導体発光装置を示す要部断
面図である。図３において、窒化ガリウム系化合物半導
体による発光素子５１は、絶縁性の結晶基板５１ａ上に
化合物半導体５１ｄを積層して構成され、その結晶基板
５１ａが下方になるようにリードフレーム５２上端に在
るマウント部５２ａの上に搭載され、ペースト５３によ
って接着されている。また、発光素子５１の主面（化合
物半導体５１ｄの上端）にはｐ側電極５１ｂ及びｎ側電
極５１ｃが形成されており、ｎ側電極５１ｃはワイヤ５
４ｂによってリードフレーム５２に接続され、それと対
になったリードフレーム５５はワイヤ５４ａによってｐ
側電極５１ｂに接続される。そして、発光素子５１及び
マウント部５２ａを含んだ周辺がエポキシ樹脂５６によ
って封止されている。FIG. 3 is a sectional view of a main part showing a conventional semiconductor light emitting device. In FIG. 3, a light emitting element 51 made of a gallium nitride-based compound semiconductor is formed by laminating a compound semiconductor 51d on an insulating crystal substrate 51a, and is located at the upper end of a lead frame 52 such that the crystal substrate 51a is located below. It is mounted on the mount part 52a and is adhered by the paste 53. A p-side electrode 51b and an n-side electrode 51c are formed on the main surface (upper end of the compound semiconductor 51d) of the light emitting element 51, and the n-side electrode 51c is
4b is connected to the lead frame 52, and the paired lead frame 55 is connected to the lead frame 52 by a wire 54a.
It is connected to the side electrode 51b. The periphery including the light emitting element 51 and the mount part 52a is sealed with the epoxy resin 56.
【０００５】このような発光素子５１を含むＬＥＤラン
プでは、発光素子５１の窒化ガリウム系化合物半導体の
ｐ−ｎ接合域を発光層（図示せず）として、ｐ側電極５
１ｂを含む領域を占めるｐ型層の上面を光取出し面とし
て上向きの発光が得られる。そして、結晶基板５１ａと
して透明なサファイア基板を用いた場合には、発光層か
らの光は発光素子５１の上端面から光を取り出すだけで
なく、この結晶基板５１ａから下側に向けても出力され
ることになる。In an LED lamp including such a light emitting element 51, a p-n junction region of a gallium nitride compound semiconductor of the light emitting element 51 is used as a light emitting layer (not shown), and a p-side electrode 5 is formed.
Upward light emission can be obtained using the upper surface of the p-type layer occupying the region including 1b as a light extraction surface. When a transparent sapphire substrate is used as the crystal substrate 51a, the light from the light emitting layer is not only extracted from the upper end surface of the light emitting element 51, but also output downward from the crystal substrate 51a. Will be.
【０００６】[0006]
【発明が解決しようとする課題】上述の窒化ガリウム系
化合物半導体を積層して発光層を形成した発光素子５１
の場合には、発光層の光学的な屈折率は約２程度であ
る。そして、窒化ガリウム系以外の化合物半導体を使用
する発光素子の発光層については、屈折率が最も大きい
もので約５程度である。一方、発光素子５１を封止する
樹脂材料としては、現在のところエポキシ樹脂が最適と
されており、このエポキシ樹脂の屈折率は約１．５程度
である。A light emitting device 51 in which a light emitting layer is formed by laminating the above gallium nitride-based compound semiconductors
In this case, the optical refractive index of the light emitting layer is about 2. The light-emitting layer of a light-emitting element using a compound semiconductor other than gallium nitride has a refractive index of about 5 at the highest. On the other hand, as a resin material for sealing the light emitting element 51, an epoxy resin is currently optimal, and the refractive index of the epoxy resin is about 1.5.
【０００７】このように、窒化ガリウム系化合物半導体
の場合でもその他の化合物半導体の場合でも、発光層の
屈折率は発光素子５１を封止するエポキシ樹脂５６の屈
折率よりも大きい。このため、発光素子５１の発光は、
屈折率の大きい半導体層から屈折率の小さいエポキシ樹
脂５６に向けて入射するので、発光層での発光が或る臨
界角よりも小さい入射角となるとエポキシ樹脂５６との
界面で全反射する。そして、窒化ガリウム系化合物半導
体の発光素子の場合では、発光層の屈折率が約２程度で
あって、エポキシ樹脂５６の屈折率は１．５程度なの
で、屈折率の差がかなり大きくなり、全反射率も高くな
る。As described above, the refractive index of the light emitting layer is larger than the refractive index of the epoxy resin 56 for sealing the light emitting element 51 in the case of the gallium nitride compound semiconductor and other compound semiconductors. Therefore, the light emission of the light emitting element 51 is
Since the light is incident from the semiconductor layer having a large refractive index toward the epoxy resin 56 having a small refractive index, when the light emitted from the light emitting layer has an incident angle smaller than a certain critical angle, it is totally reflected at the interface with the epoxy resin 56. In the case of a gallium nitride-based compound semiconductor light emitting element, the refractive index of the light emitting layer is about 2 and the refractive index of the epoxy resin 56 is about 1.5, so that the difference in the refractive index becomes considerably large, The reflectivity also increases.
【０００８】このような全反射が生じると、発光素子５
１の発光層からの光の一部はエポキシ樹脂５６との境界
面から内部側に戻る向きに反射して、エポキシ樹脂５６
を透過する全体の光量が減少し、光の取出し効率が低下
する。その結果、発光素子５１の発光輝度が減衰してし
まうことになる。そして、窒化ガリウム系以外の化合物
半導体を用いる場合には、屈折率の差がより大きくなる
ため、発光輝度の低下はより顕著である。When such total reflection occurs, the light emitting element 5
Part of the light from the first light emitting layer is reflected in a direction returning from the boundary surface with the epoxy resin 56 to the inside, and the epoxy resin 56
, The total amount of light passing through is reduced, and the light extraction efficiency is reduced. As a result, the light emission luminance of the light emitting element 51 is attenuated. When a compound semiconductor other than a gallium nitride-based compound is used, the difference in refractive index becomes larger, so that the emission luminance is more significantly reduced.
【０００９】このように発光素子５１をエポキシ樹脂５
６で封止してしまうと、両者の間での屈折率の差によっ
て、発光素子５１に求められる高輝度の発光性能を達成
することができない。そして、前述したように、封止樹
脂としてはエポキシ樹脂が最適であって、現在のところ
これに代わるものがなく、発光輝度の低下を犠牲にして
製品化に甘んじているのが実情といえる。In this manner, the light emitting element 51 is
If the light-emitting element 51 is sealed, the high-luminance light-emitting performance required for the light-emitting element 51 cannot be achieved due to a difference in refractive index between the two. As described above, the epoxy resin is the most suitable as the sealing resin, and there is no alternative at present, and it can be said that the fact is that the epoxy resin is being commercialized at the expense of lowering the emission luminance.
【００１０】本発明の目的は、発光素子を樹脂封止する
に際して、発光素子からの発光が全反射する割合を小さ
くし、発光輝度を向上した半導体発光装置を提供するこ
とにある。It is an object of the present invention to provide a semiconductor light emitting device in which, when a light emitting element is sealed with a resin, the ratio of total reflection of light emitted from the light emitting element is reduced, and the light emission luminance is improved.
【００１１】[0011]
【課題を解決するための手段】本発明の半導体発光装置
は、搭載部材の上に搭載された発光素子と、少なくとも
前記発光素子及び前記搭載部材を被覆する前記発光素子
よりも小さな屈折率の封止樹脂とを含む半導体発光装置
であって、メタキシリレンジイソシアネートと４−メル
カプトメチル−３，６−ジチア−１，８−オクタンジチ
オールとを反応させて得られ発光素子の屈折率と封止樹
脂の屈折率との間の値の屈折率を有した高屈折率樹脂
を、少なくとも前記発光素子の光取出し面に被覆させて
封止樹脂に内在させてなるものである。According to the present invention, there is provided a semiconductor light emitting device, wherein a light emitting element mounted on a mounting member and a seal having a smaller refractive index than at least the light emitting element and the light emitting element covering the mounting member. What is claimed is: 1. A semiconductor light-emitting device comprising a stop resin, wherein a refractive index of a light-emitting element obtained by reacting meta-xylylene diisocyanate with 4-mercaptomethyl-3,6-dithia-1,8-octanedithiol and a sealing resin are obtained. A high-refractive-index resin having a refractive index between the above-mentioned refractive indices is applied to at least the light extraction surface of the light-emitting element and is included in the sealing resin.
【００１２】上記構成によれば、発光素子からの光は屈
折率緩衝用の高屈折率樹脂の層を一旦通過してから封止
樹脂に達するので、発光素子と高屈折率樹脂層の屈折率
の差、および高屈折率樹脂層と封止樹脂の屈折率の差が
小さくなり、発光素子から封止樹脂の外郭面までの光路
における各層の境界面での全反射率が低減される。According to the above structure, the light from the light emitting element passes through the high refractive index resin layer for buffering the refractive index and then reaches the sealing resin. And the difference between the refractive index of the high-refractive-index resin layer and the refractive index of the sealing resin are reduced, and the total reflectance at the boundary between the layers in the optical path from the light emitting element to the outer surface of the sealing resin is reduced.
【００１３】[0013]
【発明の実施の形態】請求項１に記載の発明は、搭載部
材の上に搭載された発光素子と、少なくとも前記発光素
子及び前記搭載部材を被覆する前記発光素子よりも小さ
な屈折率の封止樹脂とを含む半導体発光装置であって、
メタキシリレンジイソシアネートと４−メルカプトメチ
ル−３，６−ジチア−１，８−オクタンジチオールとを
反応させて得られ発光素子の屈折率と封止樹脂の屈折率
との間の値の屈折率を有した高屈折率樹脂を、少なくと
も前記発光素子の光取出し面に被覆させて封止樹脂に内
在させてなるものであり、発光素子から封止樹脂の外郭
面までの光路における各層の境界面での全反射率が低減
され、発光素子からの光の取出し効率が向上するという
作用を有する。DETAILED DESCRIPTION OF THE INVENTION According to the present invention, a light-emitting element mounted on a mounting member and a seal having a refractive index smaller than that of the light-emitting element covering at least the light-emitting element and the mounting member are provided. A semiconductor light emitting device comprising: a resin;
By reacting meta-xylylene diisocyanate with 4-mercaptomethyl-3,6-dithia-1,8-octanedithiol, the refractive index of a value between the refractive index of the light emitting element and the refractive index of the sealing resin is determined. The high-refractive-index resin having is formed by covering at least the light extraction surface of the light-emitting element and making it internal to the sealing resin, and at a boundary surface of each layer in an optical path from the light-emitting element to the outer surface of the sealing resin. Has the effect of reducing the total reflectance of light and improving the light extraction efficiency from the light emitting element.
【００１４】以下に、本発明の実施の形態の具体例を図
面を参照しながら説明する。図１は、本発明の一実施の
形態における半導体発光装置を示す要部断面図であり、
窒化ガリウム系化合物半導体によるＬＥＤチップを発光
素子として備えたＬＥＤランプの構成を示すものであ
る。A specific example of an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view illustrating a main part of a semiconductor light emitting device according to an embodiment of the present invention.
1 shows a configuration of an LED lamp including an LED chip made of a gallium nitride-based compound semiconductor as a light emitting element.
【００１５】図１において、一対のリードフレーム１，
２を発光素子の導電部材として備え、一方のリードフレ
ーム１の上端にはマウント部（搭載部材）３を有し、そ
のマウント部３の上に発光素子４を搭載し、ペースト８
によって接着している。そして、マウント部３はほぼす
り鉢状に凹ませた形状であり、その内周面の全体を鏡面
状に仕上げられている。発光素子４は、下端側に透明な
サファイアの結晶基板４ａを設け、その上に化合物半導
体４ｄを形成するとともに、化合物半導体４ｄの主面に
ｐ側電極４ｂ及びｎ側電極４ｃを形成している。そし
て、ｎ側電極４ｃはワイヤ５ｂによってリードフレーム
１の上端との間をワイヤボンディングされ、ｐ側電極４
ｂはワイヤ５ａによってリードフレーム２の上端との間
をワイヤボンディングされている。発光素子４は、その
上面であってｐ側電極４ｂを含むｐ型層を光取出し面と
するとともに、発光層の下側に位置している透明な結晶
基板４ａからもその側方及び下方に向けて光を放出す
る。外皮樹脂層６は、金型を用いてエポキシ樹脂を成形
し、マウント部３の内部を除いてリードフレーム１，２
の上端および発光素子４を内包するように封止し、ボン
ディングされたワイヤ５ａ，５ｂを保護するとともにレ
ンズとしても機能するものであり、この外皮樹脂層６が
本実施の形態における封止樹脂に相当する。In FIG. 1, a pair of lead frames 1 and
2 is provided as a conductive member of the light emitting element. One of the lead frames 1 has a mount portion (mounting member) 3 at the upper end. The light emitting element 4 is mounted on the mount portion 3 and a paste 8 is provided.
Glued by. The mount 3 has a substantially mortar-shaped concave shape, and the entire inner peripheral surface thereof is mirror-finished. The light emitting element 4 has a transparent sapphire crystal substrate 4a provided on the lower end side, a compound semiconductor 4d is formed thereon, and a p-side electrode 4b and an n-side electrode 4c are formed on the main surface of the compound semiconductor 4d. . Then, the n-side electrode 4c is wire-bonded between the upper end of the lead frame 1 and the p-side electrode 4c by a wire 5b.
b is wire-bonded to the upper end of the lead frame 2 by a wire 5a. The light-emitting element 4 has a p-type layer including a p-side electrode 4b on its upper surface as a light extraction surface, and also has a transparent crystal substrate 4a positioned below the light-emitting layer on its side and below. Emit light toward. The outer skin resin layer 6 is formed by molding an epoxy resin using a mold, and excluding the inside of the mount portion 3 except for the lead frames 1, 2.
Is sealed so as to enclose the upper end of the light-emitting element 4 and the light emitting element 4 to protect the bonded wires 5a and 5b and also function as a lens. The outer resin layer 6 serves as a sealing resin in the present embodiment. Equivalent to.
【００１６】外皮樹脂層６を形成するエポキシ樹脂の屈
折率は約１．５程度であって、外部の空気の屈折率は１
であるから空気との間の屈折率の差は小さく、したがっ
て外皮樹脂層６の表面での全反射率は小さい。The refractive index of the epoxy resin forming the outer resin layer 6 is about 1.5, and the refractive index of the outside air is 1
Therefore, the difference in the refractive index from air is small, and the total reflectance on the surface of the outer cover resin layer 6 is small.
【００１７】マウント部３の内部に屈折率緩衝用の内皮
樹脂層７を充填し、発光素子４の全体を被覆する。この
内皮樹脂層７は、マウント部３に発光素子４を搭載して
固定し更にワイヤ５ａ，５ｂをボンディングした後にコ
ーティングによって形成されるもので、このコーティン
グしたものを予め製作した後に、外皮樹脂層６によって
全体を封止することによって図示の発光装置が得られ
る。The inside of the mount 3 is filled with an endothelial resin layer 7 for buffering the refractive index, and covers the entire light emitting element 4. The endothelial resin layer 7 is formed by coating after mounting and fixing the light emitting element 4 on the mount portion 3 and bonding the wires 5a and 5b. By sealing the whole with 6, the illustrated light emitting device is obtained.
【００１８】マウント部３にコーティングする内皮樹脂
層７は、発光素子４の全ての表面との間に隙間がないよ
うに充填するものとし、その上端面は外皮樹脂層６の上
側の球面とぼほ同じ曲率のプロフィルを持たせる。そし
て、内皮樹脂層７と外皮樹脂層６との境界面にも微小な
隙間がなく完全に密着接合されるように処理する。The inner resin layer 7 coated on the mount portion 3 is filled so that there is no gap between the inner surface of the light emitting element 4 and the entire surface thereof. Have a profile with almost the same curvature. Then, the processing is performed so that the boundary surface between the endothelial resin layer 7 and the outer skin resin layer 6 is completely adhered and joined without any minute gap.
【００１９】ここで、図示の例における窒化ガリウム系
化合物半導体を用いた発光素子４では、そのｐ−ｎ接合
域の発光層からの発光に対する屈折率は約２程度であ
る。一方、エポキシ樹脂を素材とする外皮樹脂層６の屈
折率は、先に述べたように約１．５程度であるため、発
光素子４と外皮樹脂層６との間では屈折率の差が大き
い。Here, in the light emitting element 4 using the gallium nitride-based compound semiconductor in the illustrated example, the refractive index for light emission from the light emitting layer in the pn junction region is about 2. On the other hand, since the refractive index of the outer resin layer 6 made of epoxy resin is about 1.5 as described above, the difference in the refractive index between the light emitting element 4 and the outer resin layer 6 is large. .
【００２０】これに対し、本発明では、内皮樹脂層７の
屈折率を１．５〜２．０に設定し、例えば１．７程度と
することによって、発光素子４と内皮樹脂層７との間及
び内皮樹脂層７と外皮樹脂層６との間のそれぞれの屈折
率の差を小さくする。このような値の範囲の屈折率を持
つ合成樹脂として、メタキシリレンジイソシアネートと
４−メルカプトメチル−３，６−ジチア−１，８−オク
タンジチールとを反応させて得られる高屈折率樹脂が適
用できる。On the other hand, in the present invention, the refractive index of the endothelial resin layer 7 is set to 1.5 to 2.0, for example, about 1.7, so that the light emitting element 4 and the endothelial resin layer 7 The difference in the refractive index between the inner layer and between the inner resin layer 7 and the outer resin layer 6 is reduced. As a synthetic resin having a refractive index in the range of such a value, a high refractive index resin obtained by reacting meta-xylylene diisocyanate with 4-mercaptomethyl-3,6-dithia-1,8-octanedityl is available. Applicable.
【００２１】以上の構成において、発光素子４で発光さ
れた光は、内皮樹脂層７と外皮樹脂層６とを経由して外
部に放出される。一方、従来の構造は外皮樹脂層６のみ
で発光素子４を封止したものに相当するが、この構成で
は発光素子４の発光面での全反射率が高くなる。これに
対して、内皮樹脂層７を設けて内皮樹脂層７と発光素子
４との間での屈折率の差を小さくして、それらの界面で
の反射率を下げることができる。そして、内皮樹脂層７
と外皮樹脂層６との間の屈折率の差も、たとえば発光素
子４とエポキシ樹脂との間の差よりも小さくなるので、
同様にこれらの内皮樹脂層７と外皮樹脂層６との間の界
面における反射率を低下させ、発光出力経路の全反射率
を低下させる。In the above configuration, the light emitted from the light emitting element 4 is emitted to the outside via the inner resin layer 7 and the outer resin layer 6. On the other hand, the conventional structure corresponds to a structure in which the light emitting element 4 is sealed only by the outer resin layer 6, but in this configuration, the total reflectance on the light emitting surface of the light emitting element 4 is increased. On the other hand, by providing the endothelial resin layer 7, the difference in the refractive index between the endothelial resin layer 7 and the light emitting element 4 can be reduced, and the reflectance at the interface between them can be reduced. And the endothelial resin layer 7
The difference in the refractive index between the light emitting element 4 and the epoxy resin is also smaller than the difference between the light emitting element 4 and the epoxy resin, for example.
Similarly, the reflectance at the interface between the inner resin layer 7 and the outer resin layer 6 is reduced, and the total reflectance of the light emission output path is reduced.
【００２２】このように、発光素子４と従来から用いら
れているエポキシ樹脂を素材とした外皮樹脂層６との間
に、内皮樹脂層７を介在させることにより、発光素子４
からの発光が最終的に外皮樹脂層６から放出されるまで
の発光出力経路での全反射率を大幅に低減することがで
きる。この実施形態を採用することにより、従来構造の
半導体発光装置に比べて発光輝度を約２０％程度向上す
ることができる。As described above, by interposing the endothelial resin layer 7 between the light emitting element 4 and the conventionally used skin resin layer 6 made of epoxy resin, the light emitting element 4
It is possible to greatly reduce the total reflectance in the light emission output path until the light emitted from the substrate is finally emitted from the outer resin layer 6. By employing this embodiment, the light emission luminance can be improved by about 20% as compared with a semiconductor light emitting device having a conventional structure.
【００２３】図２は赤または緑の発光ダイオードによる
半導体発光装置の他の実施形態を示す要部断面図であ
る。FIG. 2 is a cross-sectional view of a principal part showing another embodiment of a semiconductor light emitting device using red or green light emitting diodes.
【００２４】この例でも、上端にマウント部（搭載部
材）３を形成したリードフレーム１と、これと対をなす
リードフレーム２とを導電部材として備え、化合物半導
体基板１０ａの下側にｎ側電極１０ｂ及び上側にｐ側電
極１０ｃをそれぞれ形成した発光素子１０がマウント部
３の上に搭載されている。そして、化合物半導体基板１
０ａはマウント部３上に搭載され導電性ペースト９によ
ってマウント部３に接着されるとともにｎ側電極１０ｂ
とリードフレーム１との導通が図られており、ｐ側電極
１０ｃとリードフレーム２との間にはワイヤ１２による
ボンディング接続がなされている。Also in this example, a lead frame 1 having a mount portion (mounting member) 3 formed at the upper end and a lead frame 2 forming a pair with the lead frame 1 are provided as conductive members, and an n-side electrode is provided below the compound semiconductor substrate 10a. A light emitting element 10 having a p-side electrode 10c formed on the upper side of the mounting portion 3 is mounted on the mount portion 3. And the compound semiconductor substrate 1
Reference numeral 0a denotes an n-side electrode 10b which is mounted on the mount 3 and is adhered to the mount 3 by the conductive paste 9.
The connection between the lead frame 1 and the p-side electrode 10c and the lead frame 2 is made by wire bonding.
【００２５】赤色または緑色の発光ダイオード用の発光
素子１０では、化合物半導体基板に形成された発光層の
屈折率は約３〜５程度であり、外皮樹脂層６として用い
るエポキシ樹脂の屈折率は先に述べたように１．５程度
である。したがって、図１の例と同様に、発光素子１０
と外皮樹脂層６との間に内皮樹脂層１１ができるよう
に、この内皮樹脂層１１をマウント部３の上にコーティ
ングによって充填し、発光素子１０から外皮樹脂層６の
表面までの境界面での全反射率を低下させる。In the light emitting element 10 for a red or green light emitting diode, the refractive index of the light emitting layer formed on the compound semiconductor substrate is about 3 to 5, and the refractive index of the epoxy resin used as the outer resin layer 6 is first. As described above, the value is about 1.5. Therefore, as in the example of FIG.
This endothelial resin layer 11 is filled on the mount portion 3 by coating so that an endothelial resin layer 11 is formed between the inner and outer skin resin layers 6, and at the boundary surface from the light emitting element 10 to the surface of the outer skin resin layer 6. Lowers the total reflectance.
【００２６】ここで、内皮樹脂層１１としてはメタキシ
リレンジイソシアネートと４−メルカプトメチル−３，
６−ジチア−１，８−オクタンジチオールとを反応させ
て得られる高屈折率樹脂を使用することができる。Here, as the endothelial resin layer 11, meta-xylylene diisocyanate and 4-mercaptomethyl-3,
A high refractive index resin obtained by reacting 6-dithia-1,8-octanedithiol can be used.
【００２７】図２の例においても、発光素子１０と内皮
樹脂層１１との間の屈折率の差は、発光素子１０が直に
エポキシ樹脂の外皮樹脂層６で封止されている場合より
も小さく、また内皮樹脂層１１と外皮樹脂層６との間の
屈折率の差も小さい。したがって、発光素子１０からの
発光が外皮樹脂層６の表面から放たれるまでの全反射率
を小さく抑えることができ、発光素子１０の発光輝度が
高く維持される。Also in the example shown in FIG. 2, the difference in the refractive index between the light emitting element 10 and the endothelial resin layer 11 is larger than when the light emitting element 10 is directly sealed with the epoxy resin outer resin layer 6. The difference in refractive index between the inner resin layer 11 and the outer resin layer 6 is also small. Therefore, the total reflectance until the light emitted from the light emitting element 10 is emitted from the surface of the outer resin layer 6 can be suppressed to be small, and the light emission luminance of the light emitting element 10 is maintained high.
【００２８】なお、上述した２つの実施形態では、発光
素子を搭載して電気的に導通させる搭載導通部材をリー
ドフレームとして説明したが、プリント基板、またはプ
リント基板上に設置された各種の成型品を用いて実施す
ることもできる。In the above-described two embodiments, the mounting conductive member on which the light emitting element is mounted and made electrically conductive is described as a lead frame. However, a printed board or various molded products installed on the printed board is used. Can also be carried out.
【００２９】[0029]
【発明の効果】本発明では、メタキシリレンジイソシア
ネートと４−メルカプトメチル−３，６−ジチア−１，
８−オクタンジチオールとを反応させて得られる高屈折
率樹脂からなる屈折率緩衝用樹脂層を封止樹脂に内在さ
せることで、発光素子から封止樹脂の外郭面までの光路
における各層の境界面での全反射率を低下させることが
でき、発光素子からの光取出し効率を上げて、発光出力
を高く保つことができる。According to the present invention, metaxylylene diisocyanate and 4-mercaptomethyl-3,6-dithia-1,
By incorporating a refractive index buffering resin layer made of a high refractive index resin obtained by reacting with 8-octanedithiol into the sealing resin, a boundary surface of each layer in an optical path from the light emitting element to the outer surface of the sealing resin. , The total reflectance of the light-emitting element can be reduced, the light extraction efficiency from the light-emitting element can be increased, and the light-emitting output can be kept high.
【図１】本発明の半導体発光装置の一実施の形態を示す
要部断面図FIG. 1 is a sectional view of a main part showing an embodiment of a semiconductor light emitting device of the present invention.
【図２】本発明の半導体発光装置のその他の実施形態を
示す要部縦断面図FIG. 2 is a vertical sectional view of a main part showing another embodiment of the semiconductor light emitting device of the present invention.
【図３】従来の半導体発光装置の封止構造を示す要部断
面図FIG. 3 is a sectional view of a main part showing a sealing structure of a conventional semiconductor light emitting device.
１ リードフレーム ２ リードフレーム ３ マウント部（搭載部材） ４ 発光素子 ４ａ 結晶基板 ４ｂ ｐ側電極 ４ｃ ｎ側電極 ５ａ，５ｂ ワイヤ ６ 外皮樹脂層（封止樹脂） ７ 内皮樹脂層（屈折率緩衝用樹脂層） ８ ペースト ９ 導電性ペースト １０ 発光素子 １０ａ 化合物半導体基板 １０ｂ ｎ側電極 １０ｃ ｐ側電極 １１ 内皮樹脂層 １２ ワイヤ DESCRIPTION OF SYMBOLS 1 Lead frame 2 Lead frame 3 Mount part (mounting member) 4 Light emitting element 4a Crystal substrate 4b P-side electrode 4c N-side electrode 5a, 5b Wire 6 Skin resin layer (sealing resin) 7 Endothelium resin layer (resin for refractive index buffering) Layer) 8 paste 9 conductive paste 10 light emitting element 10a compound semiconductor substrate 10b n-side electrode 10c p-side electrode 11 endothelial resin layer 12 wire
Claims (1)
少なくとも前記発光素子及び前記搭載部材を被覆する前
記発光素子よりも小さな屈折率の封止樹脂とを含む半導
体発光装置であって、メタキシリレンジイソシアネート
と４−メルカプトメチル−３，６−ジチア−１，８−オ
クタンジチオールとを反応させて得られ発光素子の屈折
率と封止樹脂の屈折率との間の値の屈折率を有した高屈
折率樹脂を、少なくとも前記発光素子の光取出し面に被
覆させて封止樹脂に内在させてなる半導体発光装置。1. A light emitting device mounted on a mounting member,
A semiconductor light emitting device comprising at least the light emitting element and a sealing resin having a smaller refractive index than the light emitting element for covering the mounting member, wherein metaxylylene diisocyanate and 4-mercaptomethyl-3,6-dithia-1 are used. , 8-octanedithiol, a high-refractive-index resin having a refractive index between the refractive index of the light-emitting element and the refractive index of the sealing resin is applied to at least the light extraction surface of the light-emitting element. A semiconductor light emitting device that is covered and embedded in a sealing resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10210605A JP2000049387A (en) | 1998-07-27 | 1998-07-27 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10210605A JP2000049387A (en) | 1998-07-27 | 1998-07-27 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000049387A true JP2000049387A (en) | 2000-02-18 |
Family
ID=16592102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10210605A Pending JP2000049387A (en) | 1998-07-27 | 1998-07-27 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000049387A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001053374A1 (en) * | 2000-01-24 | 2001-07-26 | Mitsui Chemicals, Incorporated | Urethane resin composition for sealing optoelectric conversion devices |
| JP2003031858A (en) * | 2001-05-15 | 2003-01-31 | Lumileds Lighting Us Llc | Semiconductor led flip chip with filler having low refractive index |
| KR20050054468A (en) * | 2003-12-04 | 2005-06-10 | 닛토덴코 가부시키가이샤 | Optical semiconductor device |
| EP1621563A1 (en) * | 2004-07-27 | 2006-02-01 | Nitto Denko Corporation | Resin for optical-semiconductor element encapsulation |
| KR20060125340A (en) * | 2005-06-02 | 2006-12-06 | 에이프로시스템즈 (주) | Light emitting diode comprising optical medium |
| JP2007516601A (en) * | 2003-09-08 | 2007-06-21 | ナノクリスタル・ライティング・コーポレーション | Efficient light packaging for LED lamps using high refractive index capsule materials |
| US7722965B2 (en) | 2003-12-26 | 2010-05-25 | Nitto Denko Corporation | Electroluminescence device, planar light source and display using the same |
| US7901785B2 (en) | 2006-12-28 | 2011-03-08 | Showa Denko K.K. | Resin composition for sealing light-emitting device and lamp |
| JP2011079894A (en) * | 2009-10-05 | 2011-04-21 | Hitachi Chem Co Ltd | Urethane resin composition, cured product and optical semiconductor device using the cured product |
| WO2013051292A1 (en) * | 2011-10-07 | 2013-04-11 | 三井化学株式会社 | Polymerizable composition and application for same |
| KR20150140039A (en) * | 2014-06-05 | 2015-12-15 | 엘지이노텍 주식회사 | Light emitting device |
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1998
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001053374A1 (en) * | 2000-01-24 | 2001-07-26 | Mitsui Chemicals, Incorporated | Urethane resin composition for sealing optoelectric conversion devices |
| US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
| JP2003031858A (en) * | 2001-05-15 | 2003-01-31 | Lumileds Lighting Us Llc | Semiconductor led flip chip with filler having low refractive index |
| JP2007516601A (en) * | 2003-09-08 | 2007-06-21 | ナノクリスタル・ライティング・コーポレーション | Efficient light packaging for LED lamps using high refractive index capsule materials |
| KR20050054468A (en) * | 2003-12-04 | 2005-06-10 | 닛토덴코 가부시키가이샤 | Optical semiconductor device |
| US7722965B2 (en) | 2003-12-26 | 2010-05-25 | Nitto Denko Corporation | Electroluminescence device, planar light source and display using the same |
| EP1621563A1 (en) * | 2004-07-27 | 2006-02-01 | Nitto Denko Corporation | Resin for optical-semiconductor element encapsulation |
| KR20060125340A (en) * | 2005-06-02 | 2006-12-06 | 에이프로시스템즈 (주) | Light emitting diode comprising optical medium |
| US7901785B2 (en) | 2006-12-28 | 2011-03-08 | Showa Denko K.K. | Resin composition for sealing light-emitting device and lamp |
| JP2011079894A (en) * | 2009-10-05 | 2011-04-21 | Hitachi Chem Co Ltd | Urethane resin composition, cured product and optical semiconductor device using the cured product |
| JPWO2013051292A1 (en) * | 2011-10-07 | 2015-03-30 | 三井化学株式会社 | Polymerizable composition and use thereof |
| KR101615050B1 (en) * | 2011-10-07 | 2016-04-22 | 미쓰이 가가쿠 가부시키가이샤 | Polymerizable composition and application for same |
| WO2013051292A1 (en) * | 2011-10-07 | 2013-04-11 | 三井化学株式会社 | Polymerizable composition and application for same |
| KR20150140039A (en) * | 2014-06-05 | 2015-12-15 | 엘지이노텍 주식회사 | Light emitting device |
| KR102224077B1 (en) * | 2014-06-05 | 2021-03-09 | 엘지이노텍 주식회사 | Light emitting device |
| JP2018137274A (en) * | 2017-02-20 | 2018-08-30 | 日亜化学工業株式会社 | Light emitting device |
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