KR101433261B1 - Light Emitting Device - Google Patents

Light Emitting Device Download PDF

Info

Publication number
KR101433261B1
KR101433261B1 KR1020130004368A KR20130004368A KR101433261B1 KR 101433261 B1 KR101433261 B1 KR 101433261B1 KR 1020130004368 A KR1020130004368 A KR 1020130004368A KR 20130004368 A KR20130004368 A KR 20130004368A KR 101433261 B1 KR101433261 B1 KR 101433261B1
Authority
KR
South Korea
Prior art keywords
led chip
lead frame
cover layer
housing
light
Prior art date
Application number
KR1020130004368A
Other languages
Korean (ko)
Other versions
KR20140092075A (en
Inventor
지병주
Original Assignee
루미마이크로 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 루미마이크로 주식회사 filed Critical 루미마이크로 주식회사
Priority to KR1020130004368A priority Critical patent/KR101433261B1/en
Publication of KR20140092075A publication Critical patent/KR20140092075A/en
Application granted granted Critical
Publication of KR101433261B1 publication Critical patent/KR101433261B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A first lead frame and a second lead frame partially exposed to a cavity of the housing; a first lead frame and a second lead frame spaced apart from each other; an LED chip mounted on the first lead frame; And a second cover layer covering the LED chip and the first cover layer can be provided.

Description

[0001] Light Emitting Device [0002]

The present invention relates to a light emitting device, and more particularly, to an LED package using a light emitting diode (LED).

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. GaN series blue LEDs have been developed starting from the commercialization of red LEDs using GaAsP compound semiconductors. With the development of the technology of the LED field, it is used not only as a display device but also as a light source replacing a transmission module of an optical communication means, a backlight of an LCD display device, a fluorescent lamp or an incandescent lamp. The light emitting diode is manufactured in the form of a package in order to be used as various light sources as described above, and the phosphor emitted from the actual LED chip can be converted into the color required by the user by using the phosphor in the package form.

1 is a cross-sectional view of a commonly used LED package.

Referring to FIG. 1, a typical LED package 100 includes lead frames 120 and 130 mounted on a housing 110 having a cavity, and the LED chip 140 may be mounted on the lead frame. The molding material 160 including the fluorescent material may be filled in the cavity of the housing to cover the LED chip 140. The LED chip 140 may be a GaN-based blue light emitting chip, and the phosphor may be a yellow-based phosphor, and the color of the light output from the LED package may be white.

The LED chip 140 may be a vertical chip, and one side may be directly connected to the first lead frame 120, and may be electrically connected to the second lead frame 130 through a wire.

The light emitted from the side of the LED chip can be efficiently reflected to the front surface of the housing because the light is emitted to the top surface as well as the top surface of the LED chip. In general, the reflectivity of the inner wall surface and the lower portion of the cavity formed in the housing 110 is improved, so that light can be emitted to the outside as much as possible. In addition, some of the light emitted from the LED chip may be irregularly reflected by the fluorescent material in the molding material 160 and may be absorbed into the side surface of the LED chip 140 again. Reducing the light reabsorbed into the LED chip within the package can also be a way to increase the output of the LED package. In order to improve the light output at the LED package end, the inner structure of the LED package that emits the light emitted from the LED chip 140 to the outside is being studied.
BACKGROUND ART [0002] Techniques that serve as the background of the present invention are disclosed in Korean Patent Laid-Open Publication No. 2011-0106445, Japanese Laid-Open Patent Publication No. 2005-026401, and the like.

In order to improve the light output at the LED package end, the present invention prevents the light emitted from the LED chip from being reabsorbed into the side surface of the LED chip inside the LED package, To a light emitting diode (LED) package.

According to an aspect of the present invention, there is provided an LED package comprising: a housing formed with a cavity; a first lead frame and a second lead frame partially exposed in a cavity of the housing; A first cover layer covering a side surface of the LED chip, and a second cover layer covering the LED chip and the first cover layer.

According to the present invention, among the light emitted from the LED chip, it is prevented from being reabsorbed into the side surface of the LED chip inside the LED package, thereby increasing the light efficiency of the LED package.

1 is a cross-sectional view of a conventional LED package.
2 is a cross-sectional view of the LED package according to the first embodiment of the present invention.
3 is a cross-sectional view of an LED package according to a second embodiment of the present invention.
4 is an experimental example in which the optical simulation results of the LED package according to the second embodiment of the present invention and the LED package according to the prior art are compared.

Hereinafter, the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view of a light emitting device according to a first embodiment of the present invention.

2, the light emitting device 200 according to the present embodiment includes a housing 210, lead frames 220 and 230, an LED chip 240, a first cover layer 250, and a second cover layer 260 ).

The housing 210 may be manufactured using a PC-based resin. In the present embodiment, a cavity is formed on the front surface of the housing 210 so that the cavity can be used as a place for mounting the LED chip. The housing 210 may serve to fix the lead frame. Generally, the housing is made of a white resin, but a transparent resin using an epoxy molding compound (EMC) may be used depending on the use.

The lead frames 220 and 230 may be divided into a first lead frame 220 and a second lead frame 230. The first lead frame 220 and the second lead frame 230 may be partially exposed to the cavities formed in the housing. The first lead frame exposed in the cavity may be a mounting region of the LED chip. The second lead frame exposed in the cavity may be an area for electrically connecting with the LED chip. The first lead frame 220 and the second lead frame 230 may extend to the outside of the housing 210 to electrically connect the light emitting device 200 to the substrate. Although the external terminals of the first lead frame and the second lead frame are extended along the lower surface of the housing in the present embodiment, the terminal of the lead frame may protrude from the housing depending on the shape of the LED package . The lead frames 220 and 230 may be formed of a conductive material having a high reflectivity. For example, an aluminum alloy may be used.

The LED chip 240 may be mounted on the first lead frame 220. In the present embodiment, the LED chip 240 may be a vertical type LED chip. That is, both sides of the LED chip may be a p-electrode and an n-electrode, respectively. The LED chip 240 in this embodiment is electrically connected to the first lead frame in one side directly contacting with the first lead frame 220 and electrically connected to the second lead frame 230 by wire bonding And can be electrically connected.

The first cover layer 250 may be formed to cover the side surface of the LED chip 240. In the present embodiment, the first cover layer 250 may be a thermoplastic resin containing a reflective material or a thermosetting resin. The reflective material may use a material having a high reflectance characteristic. Also, a reflective material having high heat resistance characteristics can be used. As the reflective material, it is preferable to use a material having high reflectance characteristics such as Al 2 O 3 , SiO 2 , MgO, TiO 2 , CaCO 3, MgCO 3 , BaSO 4 and CaSO 4 and having high heat resistance.

The reflective material included in the first cover layer 250 may prevent light emitted from the LED chip 240 from being reflected from the molding region 260 of the LED package and absorbed again to the side of the LED chip. When the LED chip 240 is directly covered with the second cover layer 260 without the first cover layer 250 in the present embodiment, the light emitted from the LED chip is transmitted to the second cover layer 260 It can be reflected by the contained phosphor particles. In this case, some of the reflected light may be absorbed toward the side of the LED chip. In the present embodiment, when the LED chip is a vertical chip, light absorption may occur at a side surface of the reflector located under the LED chip. In this embodiment, the first cover layer 250 is formed on the side of the LED chip 240 in order to reduce the re-absorption of light into the side of the LED chip 240 inside the LED package. The first cover layer 250 includes a reflective material so that the light directed toward the LED chip can be reflected from the LED package to the outside of the LED package. Therefore, the light output of the entire LED package can be increased.

The first cover layer 250 is formed to be uniformly formed at the same height as the side height of the LED chip 240. The shape of the first cover layer 250 is not limited to that of the LED chip 240, It can be variously implemented as long as it covers the side surface. For example, the first cover layer may be formed to have a constant inclination from the side of the LED chip to the side wall of the cavity.

The second cover layer 260 may be filled in the cavity of the housing 210 to cover the LED chip 240 and the first cover layer 250. The second cover layer 260 may be a light-transmissive resin containing a phosphor. The second cover layer 260 may receive the light output from the upper portion of the LED chip 240 and the light reflected by the first cover layer 250 and output the light converted by the phosphor . In the present embodiment, the LED chip 240 emits blue light, and the phosphor may be a yellow phosphor, so that the output light of the light emitting device may be white. The phosphor may be selected from among YAG, silicate, and nitride-based phosphors.

3 is a cross-sectional view of a light emitting device according to a second embodiment of the present invention.

3, the light emitting device 300 according to the present embodiment includes a housing 310, lead frames 320 and 330, an LED chip 340, a first cover layer 350 and a second cover layer 360 ).

The housing 310 may be manufactured using a PC-based resin. In the present embodiment, a cavity is formed on the front surface of the housing 310 so that the cavity can be used as a place for mounting the LED chip. Further, in the present embodiment, it may be in the form of opening downward in accordance with the shape of the lead frame mounted in the cavity. The housing 310 may serve to fix the lead frame. Generally, the housing is made of a white resin, but a transparent resin using an epoxy molding compound (EMC) may be used depending on the use.

The lead frames 320 and 330 may be divided into a first lead frame 320 and a second lead frame 330. The first lead frame 320 and the second lead frame 330 may be partially exposed to the cavities formed in the housing. The first lead frame exposed in the cavity may be a mounting region of the LED chip. In the present embodiment, the first lead frame 320 may have a recess formed in a mounting region of the LED chip. That is, it may be recessed to a depth corresponding to the height of the LED chip to be mounted. By forming such a recess in the lead frame on which the LED chip is mounted, it may be advantageous to reflect the light emitted from the LED chip in the upward direction.

In this embodiment, the lower surface of the recessed portion of the first lead frame 320 in which the recess is formed may be exposed on the lower surface of the housing 310. [ The lead frame having the LED chip mounted thereon is directly exposed to the outside of the housing, thereby enhancing the heat radiating effect. The lower surface of the recessed portion may be flush with the lower surface of the housing or may be formed to have a step with the lower surface of the housing.

The second lead frame 330 exposed in the cavity may be an area for electrically connecting with the LED chip. The first lead frame 320 and the second lead frame 330 may each have a terminal extending outside the housing 310 to electrically connect the light emitting device 300 to the substrate. In the present embodiment, the external terminals of the first lead frame and the second lead frame are protruded from the housing, but they may extend along the lower surface of the housing. The lead frames 320 and 330 may be formed of a conductive material with good reflectivity. For example, an aluminum alloy may be used.

The LED chip 340 may be mounted on the first lead frame 320. In the present embodiment, it can be mounted in the recessed region of the first lead frame 320. [ In the present embodiment, the LED chip 340 may be a vertical type LED chip. That is, a p-electrode and an n-electrode may be formed on both sides of the LED chip. The LED chip 340 in this embodiment may be electrically connected to one side of the LED chip 340 directly contacting the first lead frame and electrically connected to the second lead frame by wire bonding.

The first cover layer 350 may be formed to cover the side surface of the LED chip 340. In this embodiment, the first cover layer 350 may be formed in the recessed region of the first lead frame 320 on which the LED chip 340 is mounted. In the present embodiment, the first cover layer 350 may be a thermoplastic resin containing a reflective material or a thermosetting resin. The reflective material may be a material having a high reflectance. Also, a reflective material having high heat resistance characteristics can be used. As the reflective material, it is preferable to use a material having high reflectance characteristics such as Al 2 O 3 , SiO 2 , MgO, TiO 2 , CaCO 3, MgCO 3 , BaSO 4 and CaSO 4 and having high heat resistance.

The reflective material contained in the first cover layer 350 may prevent light emitted from the LED chip 340 from being reflected by the molding region 360 of the LED package and absorbed again to the side of the LED chip. When the LED chip 340 is directly covered with the second cover layer 360 without the first cover layer 350 in the present embodiment, the light emitted from the LED chip is transmitted to the second cover layer 360 It can be reflected by the contained phosphor particles. In this case, some of the reflected light may be absorbed toward the side of the LED chip. In the present embodiment, when the LED chip is a vertical chip, the light absorption may occur at the side of the reflection plate positioned under the chip. In this embodiment, the first cover layer 350 is formed on the side of the LED chip 340 in order to reduce the reabsorption of light from the inside of the LED package to the side of the LED chip 340. The first cover layer 350 may include a reflective material so that light directed toward the LED chip may be reflected from the LED package to the outside of the LED package. Therefore, the light output of the entire LED package can be increased.

The first cover layer 350 may be formed to have the same height as the height of the side surface of the LED chip 340, It can be variously implemented as long as it covers the side surface. For example, the first cover layer may be formed to have a constant inclination from the side surface of the LED chip to the side wall of the recessed area.

The second cover layer 360 may be filled in the cavity of the housing 310 to cover the LED chip 340 and the first cover layer 350. The second cover layer 360 may be a light-transmitting resin containing a phosphor. The second cover layer 360 may receive the light output from the upper portion of the LED chip 340 and the light reflected by the first cover layer 350 and may output the light converted by the phosphor . In the present embodiment, the LED chip 340 emits blue light, and the phosphor may be a yellow phosphor, so that output light of the light emitting device may be white. The phosphor may be selected from among YAG, silicate, and nitride-based phosphors.

4 is a comparative example in which optical simulation results of an LED package according to the related art and the LED package according to the second embodiment of the present invention are compared.

In this comparative example, the housing 410, the first lead frame 420 and the second lead frame 430 of the LED package according to the prior art and the LED package according to the second embodiment of the present invention are all implemented in the same form Respectively. In the LED package according to the second embodiment of the present invention, the first cover layer is formed in the recess region formed in the first lead frame while the first cover layer is not formed in the LED package according to the prior art. As a result of optical simulation for this comparative example, it can be seen that the light output increases when the first cover layer is formed as compared with the case where the first cover layer is not formed. Therefore, it can be seen that the light output of the LED package can be increased depending on the presence or absence of the first cover layer and its components.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the present invention.

210: housing 220: first lead frame
230: second lead frame 240: LED chip
250: first cover layer 260: second cover layer

Claims (7)

A housing formed with a cavity;
A first lead frame and a second lead frame partially exposed in a cavity of the housing, the first lead frame and the second lead frame being spaced apart from each other;
An LED chip mounted on the first lead frame;
A first cover layer covering an entire side surface of the LED chip;
A second cover layer covering the LED chip and the first cover layer;
.
The method according to claim 1,
The first lead frame includes:
Wherein a recess portion in which the LED chip is mounted is formed.
3. The method of claim 2,
The first lead frame includes:
And the recessed portion is exposed to the lower portion of the housing.
3. The method of claim 2,
Wherein the first cover layer comprises:
And the light emitting element is formed in the recess portion.
The method according to claim 1,
Wherein the first cover layer comprises:
And a reflective material.
The method according to claim 1,
Wherein the second cover layer comprises:
And a phosphor is included.
The method according to claim 1,
Wherein the LED chip is a vertical chip.
KR1020130004368A 2013-01-15 2013-01-15 Light Emitting Device KR101433261B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130004368A KR101433261B1 (en) 2013-01-15 2013-01-15 Light Emitting Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130004368A KR101433261B1 (en) 2013-01-15 2013-01-15 Light Emitting Device

Publications (2)

Publication Number Publication Date
KR20140092075A KR20140092075A (en) 2014-07-23
KR101433261B1 true KR101433261B1 (en) 2014-08-27

Family

ID=51738926

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130004368A KR101433261B1 (en) 2013-01-15 2013-01-15 Light Emitting Device

Country Status (1)

Country Link
KR (1) KR101433261B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101888608B1 (en) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 Light emitting device package and lighting apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026401A (en) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd Light emitting diode
JP2007180069A (en) 2005-12-26 2007-07-12 Toshiba Corp Lens-equipped light-emitting diode device and manufacturing method thereof
JP2008251573A (en) 2007-03-29 2008-10-16 Toshiba Corp Semiconductor light-emitting device
KR20110109221A (en) * 2010-03-30 2011-10-06 엘지이노텍 주식회사 Light emitting package and light emitting apparatus having the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026401A (en) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd Light emitting diode
JP2007180069A (en) 2005-12-26 2007-07-12 Toshiba Corp Lens-equipped light-emitting diode device and manufacturing method thereof
JP2008251573A (en) 2007-03-29 2008-10-16 Toshiba Corp Semiconductor light-emitting device
KR20110109221A (en) * 2010-03-30 2011-10-06 엘지이노텍 주식회사 Light emitting package and light emitting apparatus having the same

Also Published As

Publication number Publication date
KR20140092075A (en) 2014-07-23

Similar Documents

Publication Publication Date Title
KR100809210B1 (en) High power light emitting diode package and method of producing the same
KR101088910B1 (en) LED package and method of manufacturing the same
TWI606616B (en) Light emitting device package
US10032754B2 (en) Light-emitting apparatus and illumination apparatus
KR20120096216A (en) Light emitting device package
KR20090044306A (en) Light emitting diode package
US20160056143A1 (en) Light emitting device package
TW201425820A (en) Light source and LED automobile lamp with the light source
EP3018720B1 (en) Light emitting device package
KR101653395B1 (en) Multi-chip led package
JP2008072043A (en) Optical semiconductor device
US8461609B2 (en) Light emitting device package
KR20140004351A (en) Light emitting diode package
JP4679917B2 (en) Semiconductor light emitting device
KR20100036892A (en) Light emitting diode package
KR101433261B1 (en) Light Emitting Device
JP2005347467A (en) Light emitting device and lighting system
TW201426966A (en) Light emitting diode light bar
US20140319562A1 (en) Light-emitting diode package structure
US9865571B2 (en) Light emitting diode lighting module
KR100839122B1 (en) Side view type led lamp and its fabricating method and light emittid apparatus comprising the same
KR20120030475A (en) Light emitting diode package
KR20130014755A (en) Light emitting device package and lighting system
KR101655464B1 (en) Light emitting device package, method for fabricating the same and lighting system including the same
KR20120056164A (en) Light Emitting Device Package

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170818

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20180802

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20190820

Year of fee payment: 6