JP2000040681A - Method of processing semiconductor material, etc. - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing method which enables many sheets of semiconductor materials to be processed at the same time, including one sheet of semiconductor material, by performing processing effect equivalent to conventional scrubber processing. SOLUTION: This processing method is one which removes fine particles adhering to the surface, while physically bringing particles X into contact with the surface W of many sheets of semiconductor wafers W soaked and stored in immersed form in treatment liquid M, making use of high-speed shower and bubbles arising in the treatment liquid M while sending gas into the treatment liquid M where the particles X are mixed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor material such as a semiconductor silicon wafer or a glass substrate for a liquid crystal, which adheres to a surface of the semiconductor material after a particle processing called a slurry processing. The present invention relates to a processing method for removing fine particles.

[0002]

2. Description of the Related Art Conventionally, as a method of removing fine particles remaining on the surface of a semiconductor material during a manufacturing process thereof, a brush roller or a sponge roller is rotated and physically rubbed against the surface of the semiconductor material. It has been the mainstream to perform so-called scrubber cleaning for removing fine particles. Incidentally, it is said that the fine particles are attached to the surface by the adsorption effect generated on the surface during the powder processing of the semiconductor material.

[0003]

However, in the conventional cleaning process, the process of removing fine particles is not performed unless the brush roll or the sponge roll is rubbed while rotating on the surface of the semiconductor material. It has to be work. Therefore, such a conventional processing method is troublesome, and has a problem that the production yield of the semiconductor material is very poor and wasteful.

The present invention has been made in view of such a conventional situation, and its object is to process one semiconductor material with the same processing effect as the conventional scrubber processing.
An object of the present invention is to provide a processing method capable of simultaneously processing a large number of semiconductor materials.

[0005]

In order to achieve the object, the present invention utilizes a high-speed shower and bubbles generated in the processing liquid while sending gas into the processing liquid mixed with particles. Fine particles adhering to the surface are removed while physically bringing the particles into contact with the surface of a large number of semiconductor materials immersed and stored in the processing liquid.

In addition, while forcibly circulating the processing liquid mixed with particles, each processing liquid flows along the surface of a large number of semiconductor materials immersed and stored in the processing liquid. Fine particles adhering to the surface of the semiconductor material are removed while the particles are in physical contact with the surface of the semiconductor material.

[0007] Further, the processing liquid mixed with particles is boiled in the air or a reduced-pressure atmosphere, and is immersed in the processing liquid by utilizing bubbles generated in the processing liquid due to the boiling. This is to remove the fine particles attached to the surface while physically contacting the particles with the surface of each semiconductor material.

In a state in which a large number of semiconductor materials are accommodated and supported in an appropriate container, the containers are immersed and immersed in a processing solution containing the particles, and the particles are physically applied to the surface of each semiconductor material. The fine particles adhering to the surface are removed while contacting

[0009]

Embodiments of the present invention will be described with reference to the drawings. FIGS. 1 and 2 are schematic views showing an example of a processing apparatus A for carrying out the processing method of the present invention according to claim 1. The processing apparatus A uses a processing liquid M mixed with innumerable particles X. A gas supply path 2 for feeding gas into the processing tank 1 to be stored is provided with piping toward an inner bottom of the processing tank 1. As the gas include N _2, and the like.

The processing tank 1 is used to store a large number of semiconductor materials W in FIG.
As shown in the figure, the bottom of an upper opening having a substantially rectangular shape in a plane having a size capable of being accommodated in a vertical parallel shape with an appropriate interval and having a depth capable of immersing the semiconductor material W immersed therein It is formed in a box shape.

The gas supply path 2 accommodates the gas discharge holes 3 in a path part 2-1 provided at the bottom of the processing tank 1 in a vertically parallel state while being immersed in the processing liquid M. A large number of openings are formed so that gas is blown out toward all the semiconductor materials W to be formed. As shown, it is optional to equip the control / open / close valve 4 and the like in the gas supply path 2 as needed.

Thus, the processing apparatus A configured as described above
According to the processing method described in the above, the processing liquid M mixed with innumerable particles X is stored in the processing tank 1, and a large number of semiconductor materials W are immersed and immersed in a vertical parallel manner. A gas is sent into the processing tank 1. Then, the gas is blown out from each of the gas discharge holes 3 at the bottom of the tank so as to uniformly spread toward the surface of all the semiconductor materials W contained and immersed. As a result, high-speed showers and bubbles are generated by jetting the gas into the processing liquid M, and the particles X are physically contacted and rubbed against the surface of the semiconductor material W under the buoyancy of the shower and the bubbles, and Remove the attached fine particles.

Incidentally, the material and particle size of the particles X are appropriately set depending on the material of the semiconductor material W to be processed and the properties of the fine particles to be removed.

FIGS. 3 to 5 are schematic views showing an example of a processing apparatus A-1 for carrying out the processing method of the present invention according to claim 2, in which a processing liquid M mixed with innumerable particles X is forcibly applied. Utilizing the flow of the processing liquid M generated in the processing tank 1-1 by circulating, each semiconductor material W immersed and stored in a vertical parallel state.
While the particles X are in physical contact with the surface, fine particles adhering to the surface are removed.

However, the processing apparatus A-1 of such a processing method
Is on the upper opening side of the processing tank 1-1 described in detail in the above-described embodiment,
A receiving gutter 5 is provided so as to surround the side surface, and both the bottom of the receiving gutter 5 and the bottom of the processing tank 1-1 are connected by a circulation path 6, and a circulation pump 7 is provided in the circulation path 6. It becomes.

The processing apparatus A-
According to the processing method according to 1, the processing tank is set at a water level at which each semiconductor material W accommodated in a vertical parallel arrangement can be immersed.
By forcibly circulating the processing liquid M stored in the processing tank 1-1 by the circulation pump 7, the flow of the processing liquid M generated in the processing tank 1-1, and in FIG. The particles X are separated from the semiconductor material W under the flow of the processing liquid M from the bottom of the processing tank 1 to the upper opening side thereof, and in FIG. 5, the flow of the processing liquid M from the upper opening of the processing tank 1-1 to the bottom side thereof. The particles adhering to the surface are removed while physically contacting and rubbing the surface.

FIG. 6 is a schematic view showing an example of a processing apparatus A-2 for carrying out the processing method of the present invention according to claim 3, wherein the processing liquid M mixed with innumerable particles X is boiled. Utilizing bubbles generated in the processing liquid M by the boiling, the particles X are physically brought into contact with and rubbed against the surfaces of all the semiconductor materials W immersed in the processing bath 1 while immersing the particles. It is configured to remove adhering fine particles.

However, the processing apparatus A-2 of this embodiment is
A heater 8 composed of a heater or the like is provided at the bottom of the processing tank 1 described in detail in the above embodiment, and the processing liquid M in the processing tank 1 is heated from the bottom to boil.

Thus, the processing apparatus A-
According to the processing method 2, the heater 8 is used by the heater 8 to a temperature at which the processing liquid M stored in the processing tank 1 boils at a water level at which the respective semiconductor materials W accommodated in the vertical parallel are immersed. Heat. Then, bubbles are generated in the processing liquid M,
While the particles X are physically in contact with and rub against the surface of the semiconductor material W under the floating force of the bubbles, the fine particles adhering to the surface are removed.

FIG. 7 is a schematic diagram showing another example of the processing apparatus A-3 using the above-described processing liquid boiling method. In this embodiment, the processing tank 1 having the above-described structure is replaced with the inner tank 1-3. age,
An outer tank 1-4 is provided so as to surround the inner tank 1-3, and an opening / closing lid 9 is provided at an upper opening of the outer tank 1-4. A suction path 11 having a vacuum pump 10 for reducing the pressure to an appropriate reduced pressure atmosphere is connected and equipped.

Thus, the processing apparatus A-
According to the processing method of 3, a large number of semiconductor materials W are accommodated in the inner tank 1-3 in a vertically parallel state, and the upper opening of the outer tank 1-4 is closed with the opening / closing lid 9, and then the suction pump The pressure is reduced by 10 and the inside of the tank is maintained at an appropriate reduced pressure atmosphere. Then, the inner tank 1-
3 Heat the processing liquid M to a temperature at which the processing liquid M boils by the heater 8 at the bottom. At this time, the processing liquid M is boiled before reaching the original boiling point, and bubbles are generated in the processing liquid M, and the particles X are physically deposited on the surface of the semiconductor material W under the floating force of the bubbles. The fine particles adhering to the surface are removed while contacting and rubbing the surface. In other words, in the processing method using the processing liquid boiling method in such an embodiment, the processing liquid M is heated and boiled in a reduced pressure atmosphere, so that it is not necessary to heat the processing liquid M to the original boiling point in the atmosphere. That much
The heat energy can be reduced, and the semiconductor material W can be processed with energy saving.

FIG. 8 is a schematic view showing an example of a processing apparatus A-4 for carrying out the processing method of the present invention according to claim 5, in a state where a semiconductor material W is housed and supported in an appropriate container 12. ,
While being immersed and immersed in the processing liquid M mixed with the particles X,
The structure is such that the particles X are physically brought into contact with the surface of the semiconductor material W while removing the fine particles adhering to the surface.

However, in the processing apparatus A-4 of the processing method, the processing tank 1 described in detail in the above embodiment is formed to be slightly larger than two turns, and a large number of semiconductor materials W are vertically arranged in parallel at appropriate intervals. In a state in which a container 12 having, for example, a cassette (also referred to as a carrier) having a bottom portion and a window on a peripheral surface, which is supported and held in a shape, is immersed and immersed in the processing liquid M in the processing tank 1, By moving or shaking,
It is configured to remove particles adhering to the surface of the semiconductor material W in the container 12 while physically contacting and rubbing the surface with the particle X.

In the above-mentioned detailed description of the embodiment, the housing form of the semiconductor material W in the processing tank 1 has been described as a vertical form with an appropriate interval, but the present invention is not limited to such a storage form.
For example, a horizontal form or an inclined form inclined at an appropriate angle such as 45 ° may be used.

[0025]

The method for processing a semiconductor material according to the present invention has the following functions and effects because it is configured as described above. Since particles adhering to the surface of the semiconductor material are removed while physically contacting the particles mixed in the processing liquid with the surface of the semiconductor material, the same effect as that of the conventional scrubber treatment can be obtained. Simultaneous processing of a large number of semiconductor materials as well as a plurality of semiconductor materials becomes possible. Therefore, the processing efficiency is overwhelmingly faster than in the past, and an improvement in the production yield of semiconductor materials can be expected, which is beneficial. In addition, a mechanism and structure for rotating and rubbing the brush roll or sponge roll on the surface of the semiconductor material as in the conventional device is not required, so that the device itself can be simplified and downsized, and the device itself can be accordingly reduced. Can be expected at a low cost.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an example of a processing apparatus that performs the processing method of the present invention according to claim 1.

FIG. 2 is a schematic longitudinal sectional view of the same.

FIG. 3 is a schematic diagram showing an example of a processing apparatus for performing the processing method of the present invention according to claim 2;

FIG. 4 is a schematic vertical sectional view of the same.

FIG. 5 is a schematic diagram showing another example of a processing apparatus for performing the processing method of the present invention according to claim 2;

FIG. 6 is a schematic diagram showing an example of a processing apparatus for performing the processing method of the present invention according to claim 3;

FIG. 7 is a schematic diagram showing an example of a processing apparatus that performs the processing method of the present invention according to claim 4.

FIG. 8 is a schematic diagram showing an example of a processing apparatus for performing the processing method of the present invention according to claim 5.

[Explanation of symbols]

 A-1, A-2, 1, 1-1, 1-2, A-3, A-4 ... processing equipment 1-3, 1-4 ... processing tank 2 ... gas supply path 3 ... gas discharge hole 6 ... Circulation path 7 Circulation pump 8 Heater 9 Opening / closing lid 10 Vacuum pump 11 Suction path 12 Container X Particles M

Claims (5)

[Claims] 1. A method in which a gas is sent into a processing liquid mixed with particles and the particles are physically brought into contact with the surface of each semiconductor material in which the particles are immersed by utilizing bubbles generated in the processing liquid. A method for treating a semiconductor material or the like, wherein fine particles adhering to the surface are removed. 2. A process liquid containing particles is forcibly circulated, and particles are applied to the surface of each semiconductor material by using a flow of the processing liquid flowing along the surface of each immersed semiconductor material while being forcedly circulated. A method for treating a semiconductor material or the like, wherein fine particles adhering to the surface are removed while making physical contact. 3. A process solution in which particles are mixed is boiled, and particles are physically brought into contact with the surface of each semiconductor material in which the particles are immersed by utilizing bubbles generated in the process solution due to the boiling. A method of treating a semiconductor material or the like, wherein fine particles adhering to the surface are removed while performing the treatment. 4. The method according to claim 3, wherein the processing solution is boiled in a reduced pressure atmosphere. 5. In a state where the semiconductor material is housed and supported in an appropriate container, the semiconductor material is immersed and immersed in a treatment liquid mixed with the particles, and the particles are brought into physical contact with the surface of the semiconductor material. A method for treating a semiconductor material or the like, wherein fine particles adhering to a substrate are removed.