JPH04304636A - Plate-like body processing apparatus - Google Patents

Abstract

PURPOSE:To realize the surface processing to a plate-like body such as wafer under the highly clean ambience containing extremely small amount of residual foreign materials. CONSTITUTION:Fluid supply ports 5 are opened to a rotary fluid supply part 4 provided opposed to a processing surface 2a of a wafer 2 for effectuating combination of a plurality kinds of processing fluids f to the processed surface 2a of the wafer 2 as rotary flow. Moreover, the clean air flow 26 which is forced to flow to the side of processed surface 2a from the non-processed surface 2b is always ensured during processing.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for processing plate-like objects, and in particular to a technique that is effective when applied to precision surface treatments such as precision etching and precision cleaning of semiconductor substrates, photomasks, magnetic disks, and the like.

0002

[Background Art] For example, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as wafers) and photomasks used in the manufacture of semiconductor devices, or magnetic disks, optical disks, etc. used as storage media in external storage devices of computers, etc. In the manufacturing process, precision etching using an etching solution and precision cleaning/drying treatment using chemicals such as organic solvents, methanol, and pure water are frequently used.

Regarding the above-mentioned precision surface treatment technology in the manufacture of semiconductor devices, for example, "Monthly Semiconductor World"
rld), March 1988 issue, pages 106 to 113.

[0004] In other words, the literature describes physical cleaning methods such as ■brush scrubbing cleaning method, ■high-pressure water jet cleaning method, ■ultrasonic irradiation cleaning method, and ■plasma sputter cleaning method.As for chemical cleaning methods, ■Etching treatment method using etching solution, ■Dissolution method using organic solvent, ■
It is stated that plasma etching processing methods and the like have been put into practical use.

By the way, with the miniaturization of semiconductor element structures formed on wafers, in recent years, in addition to the problem of foreign matter adhering to the front surface of the wafer on which semiconductor elements are formed, the problem of foreign matter adhering to the back surface of the wafer has become apparent. It is becoming more and more.

For example, foreign matter attached to the backside of the wafer can cause problems such as: (1) out of focus during exposure, (2) poor processing during dry etching, and (3) transfer of foreign matter to the wafer surface during batch cleaning of multiple wafers. Problems are known.

[0007] From this technical background, a single wafer cleaning apparatus that processes wafers one by one has been put into practical use by combining the various processing methods described above.

Further, US Pat. No. 4,350,562 discloses an etching processing apparatus that processes only one side of a wafer while rotating the wafer while being floated by a gas flow.

[0009]

[Problems to be Solved by the Invention] Currently, as techniques for cleaning the front and back surfaces of wafers, a batch processing method and a single wafer processing method coexist. In the former method, a cassette containing a plurality of wafers is immersed in a chemical treatment tank and subjected to chemical treatment. Specifically, (1) organic solvent cleaning ⇒ water washing ⇒
There are methods that combine various chemical solutions, such as (2) hydrofluoric acid treatment ⇒ water washing ⇒ drying, (3) alkaline oxidizing agent treatment ⇒ water washing ⇒ hydrofluoric acid treatment ⇒ water washing ⇒ acidic oxidizing agent treatment ⇒ water washing ⇒ drying, etc. .

[0010] This type of batch cleaning process has a problem in that foreign matter adhering to the front and back surfaces of the wafer is brought directly into the cleaning tank and contaminates the chemical solution in the cleaning tank. In particular, with current wafer processing equipment, 0.5μ
A problem arises in that adhered foreign particles of size m or larger are generated in the thousands (pieces/wafer), contaminate the chemical solution in the cleaning tank, and that the adhered foreign particles on the back surface of the wafer are transferred to the surface of the adjacent wafer.

On the other hand, the latter single wafer processing method
The mainstream method is to handle the wafers one by one, perform a cleaning process that combines brush cleaning with pure water, jet cleaning, shower cleaning, etc., and then dry the wafers by rotating them at high speed.

[0012] In such a single-wafer cleaning method, even if foreign matter adhering to the wafer surface is removed, the foreign matter present on the brush may re-adhere, and there is no flow of chemical solution, so ultrasonic energy cannot There are problems such as microscopic foreign matter once peeled off remaining on the wafer and not being completely removed.

[0013] Furthermore, there is another problem in that cleaning liquid and the like that are scattered and removed from the wafer surface during rotational drying are reflected on the wall surface of the processing chamber and re-adhered to the wafer surface together with foreign matter. In addition, in conventional single-wafer processing, when cleaning the back side of the wafer after processing the front side of the wafer, a mechanism for reversing the wafer is required, which increases the number of times the wafer is handled and causes foreign matter to adhere between handling operations. There is also the problem of causing an increase in

Furthermore, in the prior art disclosed in the US patent mentioned above, one surface of the wafer is etched with an etching solution, and precise surface treatment of the wafer, including drying treatment, is not considered. Furthermore, there is a problem in that the wafer, which floats and rotates due to the gas flow, may come into contact with the surrounding casing, causing chipping of the outer periphery of the wafer.

[0015] Accordingly, an object of the present invention is to provide a plate-shaped object processing apparatus that can perform surface treatment with extremely low residual foreign matter and high cleanliness.

Another object of the present invention is to provide a plate-like object processing apparatus that can reliably prevent the occurrence of contamination on the second main surface due to processing of the first main surface of the plate-like object. .

Still another object of the present invention is to provide a plate-like object processing apparatus capable of obtaining a highly clean treatment result without damaging the plate-like object.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[0019]

[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions will be as follows.
It is as follows.

That is, the plate-like object processing apparatus according to the present invention includes a processing fluid supply means for applying a processing fluid to the first main surface of the plate-like object while forming a predetermined streamline, and It is designed to process things.

In addition, in the plate-shaped object processing apparatus according to the present invention, the streamline of the processing fluid has a spiral shape extending from the central part to the peripheral part of the plate-shaped object, and the processing fluid becomes a rotational flow to form the plate-shaped object. It is designed to act on things.

Further, the plate-shaped object processing apparatus according to the present invention includes an ultrasonic wave applying means for applying ultrasonic energy to the processing fluid acting on the plate-shaped object, and performs the processing while applying the ultrasonic energy to the processing fluid. It was designed to be carried out.

Further, the plate-shaped object processing apparatus according to the present invention is provided with a heating means for applying thermal energy to the plate-shaped object, and is configured to carry out processing using the processing fluid while applying thermal energy to the plate-shaped object. It is something.

[0024] In addition, the plate-like object processing apparatus according to the present invention has an inert gas flowing from the second main surface toward the first main surface on the second main surface that is opposite to the first main surface of the plate-like object. The system is equipped with an inert gas supply means for supplying.

Further, the plate-like object processing apparatus according to the present invention uses a liquid as the processing fluid.

Further, the plate processing apparatus according to the present invention uses liquid vapor as the processing fluid.

Further, the plate-like object processing apparatus according to the present invention uses gas as the processing fluid.

Further, the plate processing apparatus according to the present invention uses a combination of liquid, liquid vapor, and gas as the processing fluid.

[0029]

[Function] According to the above-described plate-like object processing apparatus of the present invention, a chemical liquid that forms a rotational flow toward the first main surface of the plate-like object in a direction from the center of the first main surface toward the outer circumferential part. By applying a treatment fluid such as an inert gas, foreign matter on the first main surface is reliably removed to the outside together with the treatment fluid, and highly clean surface treatment with extremely few residual foreign matter can be performed.

[0030] Also, a second main surface forming the front and back sides of the first main surface during processing is
By acting on the main surface with an inert gas flowing from the second main surface side to the first main surface side, the used processing fluid and atmosphere containing foreign matter removed on the first main surface are transferred to the second main surface. There is no possibility of the second main surface getting stuck onto the surface, and contamination such as foreign matter adhering to the second main surface that is not related to the processing can be reliably prevented.

[0031] Furthermore, by appropriately controlling the type and combination of chemicals used as the treatment fluid depending on the type of plate-like object to be treated and the type of foreign matter expected, it is possible to All kinds of foreign substances can be reliably removed.

Furthermore, by using ultrasonic energy or thermal energy as necessary, it is possible to more effectively remove fine foreign matter of 0.5 μm or less, drying treatment, etc.

[0033] Furthermore, by using a processing fluid such as an inert gas having streamlines extending from the center of the first main surface of the plate to the peripheral part, drying can be achieved by removing droplets on the first main surface. Processing can be performed effectively, and contamination due to redeposition of droplets can be reliably prevented.

Furthermore, since there is no need to move the plate itself, highly clean processing results can be obtained without worrying about damage such as chipping.

[0035]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A plate-like material processing apparatus which is an embodiment of the present invention will be specifically described below with reference to the drawings. Figure 1 shows
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of the configuration of a plate-shaped material processing apparatus that is an embodiment of the present invention.

For example, a wafer 2 held by a wafer handler 3 is carried into and taken out of a cup-shaped processing chamber 1 through an opening 1a, and is also moved to a predetermined position inside the processing chamber 1. The structure is such that positioning of the wafer 2 is performed.

Inside the processing chamber 1, a processing surface 2a of the wafer 2 is positioned at a predetermined position by the wafer handler 3.
A rotating flow forming fluid supply unit 4 is disposed at a position facing the (first main surface) with a predetermined gap therebetween. A fluid pressurization adjustment chamber 14 is provided inside the rotating flow forming fluid supply section 4, and a plurality of fluid supply ports 5 communicating with the fluid pressurization adjustment chamber 14 are provided on the surface facing the wafer 2. It has been established.

[0038] The plurality of fluid supply ports 5 are connected to the fluid pressurization adjustment chamber 1.
4, and is connected to, for example, an organic solvent supply section 15, a methanol supply section 16, a pure water supply section 17, and a nitrogen gas supply section 18, and the processing fluid f includes an organic solvent, methanol, pure water, nitrogen gas, etc. The structure is such that it is supplied with Further, the flow rate of the processing fluid f such as organic solvent, methanol, pure water, nitrogen gas, etc. from the fluid supply port 5 and the presence or absence of supply are determined by the organic solvent supply section 15, the methanol supply section 16,
An organic solvent supply control valve 19 and a methanol supply control valve 20 provided in each of the pure water supply section 17 and the nitrogen gas supply section 18
, a pure water supply control valve 21, and a nitrogen gas supply control valve 22, respectively. The fluid pressurization adjustment chamber 14 functions to equalize the flow rate of the processing fluid f flowing out and being supplied through each fluid supply port 5 .

Furthermore, an exhaust port 25 is provided at the bottom of the processing chamber 1.
An exhaust waste liquid recovery unit 23 is connected through the exhaust liquid recovery unit 23, which performs an exhaust operation to draw in the atmosphere inside the processing chamber 1, and also collects processing fluid f supplied to the processing surface 2a of the wafer 2 as described below. The system is configured to collect That is, inside the processing chamber 1, there is an exhaust waste liquid recovery section 23.
Due to the evacuation operation, the flow flows from the outside through the opening 1a, and the non-processed surface 2b (second main surface) of the wafer 2
A clean air flow 26 is formed that flows along the wafer 2 and flows into the processing chamber 1 from the gap between the outer periphery of the wafer 2 and the opening 1a. Although not particularly illustrated, an inert gas supply source is provided outside the opening 1a of the processing chamber 1 to supply a clean inert gas that becomes the clean air flow 26.

Around the rotating flow forming fluid supply section 4, the clean air flow 26 that flows into the processing chamber 1 from the back side along the periphery of the wafer 2 is uniformly distributed over the entire circumference of the wafer 2. An airflow regulating plate 24 is provided. That is, the exhaust port 25 to which the exhaust waste liquid recovery section 23 is connected
Since the number of
It is unavoidable that the inflow state of the wafer 2 becomes non-uniform around the wafer 2. For this reason, for example, the airflow adjustment plate 24
By reducing the passage area of the clean air flow 26 in the region near the exhaust port 25 where a stronger exhaust action is performed, and increasing the passage area in the region far from the exhaust port 25, the inflow state of the clean air flow 26 can be made uniform. has been realized.

FIG. 2 is a plan view showing an example of the configuration of the plurality of fluid supply ports 5 in the rotating flow forming fluid supply section 4. As shown in FIG.

As shown in the figure, the plurality of fluid supply ports 5 are arranged on an involute curve obtained by dividing the involute base circle 7 set at the surface of the rotating flow forming fluid supply unit 4 facing the wafer 2 by 45 degrees. are arranged, and furthermore,
The opening direction 6 (outflow direction of the processing fluid f) of each fluid supply port 5 is tangential to the involute curve. As a result, the processing fluid f flowing out from the plurality of fluid supply ports 5 becomes a rotational flow forming a spiral streamline from the center of the wafer 2 to the periphery, and is supplied to the wafer 2. .

Next, an example of the operation of the plate-shaped object processing apparatus of this embodiment constructed as described above will be explained. In addition,
In the following description, a case will be described in which a cleaning process is performed on the back surface of the wafer 2 as an example of the process. That is, Figure 1
The processing surface 2a (first main surface) of the wafer 2 in is the back surface opposite to the front surface on which a predetermined semiconductor integrated circuit or the like is formed.

First, the exhaust waste liquid recovery section 23 is activated so that the clean air stream 26 constantly flows into the processing chamber 1 through the opening 1a.

In this state, the wafer 2 held by the wafer handler 3 is carried into the processing chamber 1 with the processing surface 2a to be processed facing the rotational flow forming fluid supply unit 4, and the rotational flow is applied to the wafer 2. It is positioned at a predetermined position parallel to and facing the forming fluid supply section 4 with a predetermined gap therebetween.

In this positioning state, the action of the airflow adjustment plate 24 forms a clean airflow 26 that uniformly flows into the processing chamber 1 over the entire circumference of the wafer 2 .

Thereafter, first, the organic solvent supply control valve 19 is opened, and an organic solvent such as acetone, methyl ethyl ketone, methyl isobutyl ketone, etc. is supplied to the wafer 2 as the processing fluid f from the organic solvent supply section 15 through the fluid supply port 5. supply

Due to the above-described arrangement and opening direction of the fluid supply ports 5, as illustrated in FIG. It becomes a rotating flow that flows away. Therefore, organic foreign matter adhering to the processing surface 2a of the wafer 2 is dissolved and peeled off by the processing fluid f made of an organic solvent, and is also carried to the outside of the wafer 2 by the processing fluid f forming the rotating flow. removed, ensuring that it is removed without any residue.

After continuing to supply the processing fluid f made of an organic solvent for a predetermined period of time to sufficiently remove foreign matter adhering to the processing surface 2a of the wafer 2, the organic solvent supply control valve 19 is closed and the organic solvent The supply of processing fluid f consisting of

Next, the methanol supply control valve 20 is opened, and methanol is supplied from the methanol supply section 16 as the processing fluid f.

[0051] As in the case of the organic solvent described above, the methanol supplied and discharged from the fluid supply port 5 acts on the processing surface 2a as a rotating flow from the center to the peripheral part of the wafer 2.

[0052] As a result, the entire droplets of organic solvent and the like existing on the processing surface 2a of the wafer 2 are replaced by the methanol.

After the methanol supply is maintained for a predetermined period of time to ensure replacement with methanol, the methanol supply control valve 20 is closed to stop the methanol supply.

Thereafter, similarly, the pure water supply control valve 21 is opened to start supplying pure water as the processing fluid f from the pure water supply section 17, and after supplying pure water for a predetermined time, the pure water The supply control valve 21 is closed to stop the supply of pure water as the processing fluid f.

After the processing surface 2a of the wafer 2 is thus sequentially processed with the processing fluid f consisting of organic solvent, methanol, and pure water, the nitrogen gas supply control valve 22 is opened to supply the processing fluid f from the nitrogen gas supply section 18. A predetermined amount of nitrogen gas is supplied in the form of a rotating flow through the fluid supply port 5 to the processing surface 2a of the wafer 2 for drying. Nitrogen gas is supplied as the processing fluid f for a predetermined period of time, and the processing surface 2a of the wafer 2 is
After reaching the desired dry state, the nitrogen gas supply control valve 22
Close and stop supply.

The wafer 2 thus processed is carried out of the processing chamber 1 by the transport operation of the wafer handler 3.

As described above, according to the plate processing apparatus of this embodiment, the organic solvent, methanol, pure water, and nitrogen gas as the processing fluid f are applied to the processing surface 2a of the wafer 2 to be processed.
The flow acts as a rotating flow forming a spiral streamline from the center to the periphery of the surface 2a. Foreign matter peeled off/removed from
It is reliably removed to the outside of the wafer 2 without stagnation,
The processing surface 2a of the wafer 2 can be highly cleaned.

Furthermore, a clean air flow 26 passes through the gap between the periphery of the wafer 2 and the opening 1a of the processing chamber 1 from the non-processed surface 2b (front surface) side, which is opposite to the processed surface 2a of the wafer 2. is forced to flow into the processing chamber 1 at all times, so
Splashes of the processing fluid f generated during the cleaning and drying process of the processing surface 2a performed inside the processing chamber 1, atmosphere containing foreign matter, etc. are prevented from going around to the non-processing surface 2b side, and the processing surface 2a is Non-processed surface 2 not related to processing for 2a
b. contamination can be reliably prevented.

Furthermore, since the wafer 2 being processed is stably supported by the wafer handler 3, there is no fear that the peripheral portion of the wafer 2 will collide with the inner wall surface of the processing chamber 1 and cause chipping.

[0060] In the above explanation, the organic solvent supply system,
The methanol supply system, pure water supply system, and nitrogen gas supply system are used on the same line downstream of the organic solvent supply control valve 19, methanol supply control valve 20, pure water supply control valve 21, and nitrogen gas supply control valve 22. However, the present invention is not limited to this, and the connection to the rotating flow forming fluid supply unit 4 may be made independent to eliminate the time required for replacing each processing fluid f in the piping system in the line, thereby increasing processing efficiency. You can do it like this.

FIG. 3 is a plan view showing the main parts of a plate-like object processing apparatus according to another embodiment of the present invention. In the case of the embodiment shown in FIG. 3, a plurality of rows of fluid supply ports 8 whose opening direction 9 is set in the tangential direction of the involute curve are provided in the rotating flow forming fluid supply section 4A, and the fluid supply ports 8 are provided in the center part. directly above,
That is, this differs from the plate-like object processing apparatus illustrated in FIG. 1 in that a fluid supply port 10 is provided which opens in a direction substantially perpendicular to the processing surface 2a of the wafer 2.

With this configuration of the rotating flow forming fluid supply section 4A, the same effects as in the embodiment of FIG. 1 can be obtained, and the flow rate of the processing fluid f supplied from the fluid supply ports 8 and 10 can be It can be made larger to improve processing efficiency. In addition, the processing fluid f ejected from the fluid supply port 10 that opens in the center can more reliably remove foreign matter and the like that tend to stay on the processing surface 2a of the wafer 2.

FIG. 4 is a plan view showing the main parts of a plate-shaped material processing apparatus according to still another embodiment of the present invention, and FIG. 5 is a sectional view of the portion indicated by line V-V in FIG. It is.

In the case of the embodiment shown in FIGS. 4 and 5,
A fluid supply port 11 having an involute curve and opening in the shape of a groove is formed in the rotating flow forming fluid supply section 4B.

The opening direction 12 of the cross section of the fluid supply port 11 in the radial direction of the rotating flow forming fluid supply section 4B is inclined in the direction from the center to the peripheral part of the processing surface 2a of the wafer 2 to be processed. is set.

As a result, as in the case of the embodiment shown in FIG. 3, the supply flow rate of the processing fluid f acting on the wafer 2 in the form of a rotational flow can be made sufficiently large, and the processing efficiency can be further improved. Can be done.

Next, referring to FIG. 6, a plate-like material processing apparatus which is still another embodiment of the present invention will be explained. In the case of the embodiment shown in FIG. 6, ultrasonic energy is used for cleaning the wafer 2.

That is, inside the processing chamber 27, a rotating flow forming fluid supply section 28 facing the processing surface 2a of the wafer 2 held by the wafer handler 3 is disposed, and a pure water supply section 31 and a nitrogen gas supply section 28 are provided. The supply unit 32 is configured to supply pure water and nitrogen gas as the processing fluid f via a pure water supply control valve 33 and a nitrogen gas supply control valve 34 . An ultrasonic vibrator 29 operated by energy given from an ultrasonic oscillation source 30 is arranged inside the rotating flow forming fluid supply section 28 .

An exhaust mechanism (not shown) is provided at the bottom of the processing chamber 27, and a clean airflow 37 is supplied from the outside through the gap between the outer periphery of the wafer 2 and the opening 27a of the processing chamber 27.
A forced exhaust flow 36 is formed by forcibly inflowing the air.

An example of the operation of the plate-shaped object processing apparatus of this embodiment will be explained below.

First, while the forced exhaust flow 36 is being formed, the unprocessed wafer 2 held in the wafer handler 3 is
is carried into the processing chamber 27 through the opening 27a and opposed to the rotating flow forming fluid supply section 28 with a predetermined gap therebetween.

[0072] Thereafter, first, the pure water supply control valve 33 is opened to supply pure water to the rotating flow forming fluid supply unit 28, and the pure water is applied to the processing surface 2a of the wafer 2 as a rotating flow through the fluid supply port 35. In this state, the ultrasonic vibrator 29 is operated to apply ultrasonic energy to the pure water serving as the processing fluid f that is acting on the wafer 2 from the rotating flow forming fluid supply unit 28 . This ultrasonic energy promotes the peeling and removal action of foreign matter etc. by the processing fluid f acting on the wafer 2 in the form of a rotational flow, and the peeled and removed foreign matter is retained by the processing fluid f forming the rotational flow. The wafer 2 is immediately expelled from the wafer 2.

After performing this cleaning process for a predetermined period of time, the application of ultrasonic energy is stopped, and the pure water supply control valve 33 is closed to stop the supply of pure water as the processing fluid f. Thereafter, the nitrogen gas supply control valve 34 is opened to start supplying nitrogen gas as the processing fluid f, and the fluid supply port 3
5, nitrogen gas is applied to the processing surface 2a of the wafer 2 to dry the processing surface 2a. After the wafer 2 is sufficiently dried by supplying nitrogen gas for a predetermined period of time, the nitrogen gas supply control valve 34 is closed to stop the supply of nitrogen gas, and the processed wafer 2 is carried outside.

As described above, in the case of this embodiment, finer foreign matter can be effectively removed by ultrasonic cleaning with pure water, and foreign matter once removed from the wafer 2 can be removed by the rotational flow. It is reliably removed to the outside of the wafer 2 without remaining together with the pure water (processing fluid f), and there is no fear of re-contamination. For this reason, the processing surface 2a of the wafer 2
can be highly purified. In addition, as in the case of each of the above-described embodiments, the clean air flow 37 forcibly flowing into the processing chamber 1 from the outside removes droplets of the processing fluid f and foreign matter generated inside the processing chamber 27 from the wafer 2.
It does not wrap around and adhere to the side of the non-processed surface 2b that is not related to the processing, and it is possible to reliably prevent the occurrence of contamination of the non-processed surface 2b during the cleaning process of the processed surface 2a.

FIG. 7 is a schematic cross-sectional view showing an example of the configuration of a plate-like object processing apparatus according to another embodiment of the present invention. In the case of this embodiment, the wafer 2 is configured to undergo vapor etching processing.

That is, inside the processing chamber 38, there is a processing surface 39a (
A rotating flow forming fluid supply section 4 is located at a position facing the first main surface).
1 is provided. This rotating flow forming fluid supply section 41 includes an etching liquid vapor control valve 45 and a water vapor supply control valve 4.
6. Via the nitrogen gas supply control valve 47, the etching liquid vapor generation section 42, the water vapor generation section 43, and the nitrogen gas supply section 44
are connected to each other, and the processing surface 39a of the wafer 39
It is possible to apply etching liquid vapor, water vapor, nitrogen gas, etc. as the processing fluid f to the processing surface 39a from the fluid supply port 5 opened opposite to the processing surface 39a.

Further, a quartz rectifying plate 50 and a quartz plate 51 having a large number of through holes 50a are arranged at a position facing the rotating flow forming fluid supply section 41 with the wafer 39 in between. An infrared lamp 52 is arranged on the back side of the quartz plate 51, and it illuminates the non-processed surface 39b (second
It is configured to irradiate infrared rays 52a to the main surface) side.

Furthermore, a quartz plate 51 and a rectifying plate 50
A nitrogen gas supply unit 49 is connected to the space between the two, and nitrogen gas 49a is uniformly supplied to the non-processed surface (non-processed surface 39b) of the wafer 39 through the numerous through holes 50a of the current plate 50. The structure is supplied. In addition, the processing chamber 38
An exhaust liquid waste recovery unit 48 is provided at the bottom of the wafer 39 to recover waste liquid generated in a series of processes as described below, and also to collect nitrogen gas 49a supplied to the back side of the wafer 39. The effect is to form a forced exhaust flow in the drawing direction through the gap between the outer peripheral portion of the processing chamber 38 and the processing chamber 38 .

An example of the operation of the plate-like material processing apparatus shown in FIG. 7 will be described below.

First, the processing chamber 38 is opened by activating the exhaust waste liquid recovery section 48 and supplying nitrogen gas 49a from the nitrogen gas supply section 49 to the non-processing side of the wafer 39.
A downward exhaust flow (nitrogen gas flow) is formed inside.

In this state, the wafer handler 40 is operated to position the wafer 39 at a position facing the rotating flow forming fluid supply section 41.

Thereafter, the nitrogen gas supply control valve 47 is opened to supply nitrogen gas from the nitrogen gas supply section 44, and at the same time,
The etching liquid vapor control valve 45 is opened to supply predetermined etching liquid vapor from the etching liquid vapor generating section 42 . As a result, the processing fluid f consisting of etching liquid vapor using nitrogen gas as a carrier acts on the processing surface 39a of the wafer 39 as a rotational flow through the fluid supply port 53 of the rotational flow forming fluid supply section 41, and etching the processing surface 39a. Perform processing.

After the etching process for a predetermined time, first, the etching liquid vapor control valve 45 is closed to stop the supply of etching liquid vapor, and at the same time, the water vapor supply control valve 46 is opened to stop the supply of water vapor from the water vapor generating section 43. Start. This water vapor is applied to the wafer 3 as a processing fluid f using the aforementioned nitrogen gas supplied from the nitrogen gas supply section 44 as a carrier.
9 acts as a rotational flow on the processing surface 39a, and the processing surface 39
A process is performed to wash away the etching solution remaining in a.

After the cleaning process using steam for a predetermined period of time, the steam supply control valve 46 is closed to stop the supply of steam, and only nitrogen gas is supplied as the processing fluid f.

Then, with only this nitrogen gas being supplied as the processing fluid f, the infrared lamp 52 is turned on, and the infrared ray 52a is irradiated onto the non-processing surface 39b of the wafer 39 through the quartz plate 51 and the rectifying plate 50. and wafer 39
promotes drying. After the drying process by irradiation with infrared rays 52a for a predetermined time, the infrared lamp 52 is turned off, the irradiation with infrared rays 52a is stopped, and the nitrogen gas supply control valve 4 is turned off.
7 to stop the supply of nitrogen gas.

As described above, in the case of this embodiment, the etching liquid vapor becomes a rotating flow and reaches the processing surface 39a of the wafer 39.
, so the etching affects the treated surface 39a.
Foreign matter that peels off from the wafer 39 is reliably removed to the outside of the wafer 39, and furthermore, even in the cleaning process using water vapor and the drying process using nitrogen gas, the processing fluid f becomes a rotating flow and acts on the processing surface 39a, so that no residual particles are removed. Reliably reduces foreign substances,
The treated surface 39a can be brought into a highly clean state.

Further, the wafer 39 is removed from the nitrogen gas supply section 49.
Since the nitrogen gas 49a supplied to the non-processing surface becomes a forced exhaust flow and moves toward the rotating flow forming fluid supply section 41, the processing fluid f generated on the processing surface 39a side during processing is removed. Splashes do not go around to the non-processed surface, and contamination of the non-processed surface can be prevented.

FIG. 8 is a cross-sectional view showing an example of the configuration of a plate-shaped object processing apparatus according to still another embodiment of the present invention.

The plate processing apparatus of this embodiment is configured as an organic cleaning apparatus.

Inside the processing chamber 54, a rotating flow forming fluid supply section 57 is arranged with the perforated surface of the plurality of fluid supply ports 58 facing upward, and an organic solvent supply control valve 61 and a nitrogen gas supply control valve 57 are arranged. Via the valve 62, the organic solvent supply section 5, which is a supply source of an organic solvent and nitrogen gas as the processing fluid f.
9 and a nitrogen gas supply section 60 are connected.

A wafer handler 55 is provided at a position penetrating the periphery of the rotating flow forming fluid supply section 57, and handles a wafer 56 to be processed in an attitude with the processing surface 56a (first principal surface) facing downward. It is configured to perform a positioning operation with respect to the rotating flow forming fluid supply section 57.

A waveguide 64 is provided at a position facing the rotating flow forming fluid supply section 57 with the wafer 56 in between. A microwave source (not shown) is connected to the waveguide 64, and is configured to irradiate a microwave electromagnetic field 66 of a desired wavelength onto the non-processed surface 56b (second principal surface) of the wafer 56.

The opening of the waveguide 64 has a large number of through holes 63.
A rectifying plate 63 with holes a is provided substantially parallel to the wafer 56, and a nitrogen gas supply section 65 is connected to the waveguide 64, and a large number of transparent plates in the rectifying plate 63 The structure is such that nitrogen gas 65a is evenly blown out toward the non-processed surface 56b of the wafer 56 through the hole 63a.

A shield mechanism 67 is provided at the penetrating portion of the wafer handler 55 in the rotating flow forming fluid supply section 57 to prevent leakage of the processing fluid f and the microwave electromagnetic field at the penetrating portion.

Although not particularly shown, an exhaust liquid waste circulation mechanism is provided at the bottom of the processing chamber 54 to recover waste liquid generated during processing, and also to collect waste liquid from the waveguide 64 described above. It functions to forcibly form an exhaust flow in the direction of drawing the nitrogen gas 65a flowing through the processing chamber 63 into the processing chamber 54.

[0096] The organic cleaning process performed by the plate-shaped material processing apparatus of the embodiment shown in FIG. 8 will be described below.

First, the nitrogen gas 65a supplied from the inside of the waveguide 64 through the rectifying plate 63 is forcibly drawn into the processing chamber 54 by an exhaust operation by an exhaust waste liquid recovery mechanism (not shown), thereby forcing it downward. Form an exhaust flow.

In this state, the wafer handler 55
The wafer 56 is carried in and positioned at a position where the processing surface 56a faces the rotating flow forming fluid supply section 57 with a predetermined gap therebetween.

Thereafter, the organic solvent supply control valve 61 is opened to start supplying the organic solvent as the processing fluid f, and the processing surface 56a of the wafer 56 is supplied as a rotational flow from the fluid supply port 58 of the rotational flow forming fluid supply section 57. to act on. Due to the action of this organic solvent, organic foreign substances present on the processing surface 56a of the wafer 56 are peeled off and removed by the dissolving action of the organic solvent, and are ejected to the outside of the wafer 56 together with the rotating organic solvent without being retained. be done. like this,
After performing the cleaning process using the organic solvent for a predetermined period of time, the organic solvent supply control valve 61 is closed to stop the supply of the organic solvent.

Next, open the nitrogen gas supply control valve 62,
The supply of nitrogen gas as the processing fluid f is started, and the processing surface 56 of the wafer 56 is supplied as a rotational flow through the fluid supply port 58.
At the same time, a microwave electromagnetic field 66 is applied from the non-processed surface 56b of the wafer 56 through the waveguide 64. This promotes evaporation of the organic solvent from the wafer 56, and the wafer 56 is quickly dried.

After the drying process for a predetermined time by irradiation with the microwave electromagnetic field 66, the application of the microwave electromagnetic field 66 is stopped, the nitrogen gas supply control valve 62 is closed, and the supply of nitrogen gas as the processing fluid f is stopped. Stop.

As described above, according to the plate processing apparatus of this embodiment, the organic solvent as the processing fluid f is applied to the processing surface 56a of the wafer 56 in a rotating flow, thereby removing residual foreign matter and the like. A high degree of cleaning can be achieved without causing any problems. In addition, nitrogen gas as the processing fluid f is applied to the processing surface 56a of the wafer 56 in a rotating flow, and the evaporation of the organic solvent is promoted by the heating by the microwave electromagnetic field 66, so that the The time required for drying treatment can be shortened. In addition, by setting the wavelength of the microwave electromagnetic field 66 with the highest heating efficiency according to the type of the processing fluid f,
Drying process can be made more efficient.

In addition, nitrogen gas 65a is forced to flow from the non-processed surface 56b side of the wafer 56 to the processed surface 56a side.
The exhaust flow reliably prevents organic solvent droplets generated on the treated surface 56a side, nitrogen gas atmosphere containing foreign substances, etc. from going around to the non-treated surface 56b side, and the It is possible to reliably prevent the occurrence of contamination on the non-processed surface 56b.

FIG. 9 is an external perspective view showing an example of the configuration of a plate-shaped object processing apparatus according to still another embodiment of the present invention.

In the case of the embodiment shown in FIG. 9, for example,
In the plate-shaped object processing apparatus illustrated in FIGS. 1 and 6 described above, the processing chamber 1 (processing chamber 27) is of a vertical type.

That is, each rotating flow forming fluid supply section 4
The (rotating flow forming fluid supply section 28) is installed in such a manner that the plane in which the fluid supply port 5 (fluid supply port 35) is opened is in the vertical direction.

[0107] This allows the orientation of the plurality of wafers 2, which are arranged and stored in the cassette 100 in a substantially vertical orientation, to be received or delivered, to be adjusted to the cassette 100.
It is now possible to handle the product while maintaining its vertical position. Therefore, the wafer handler 3 can omit complicated mechanisms such as turning the wafer 2 taken out from the cassette 100 in a vertical position and making it horizontal, or making the wafer 2 in a horizontal position vertical. 3 can be simplified.

Note that the wafer holding method is not limited to the wafer handler of each of the embodiments described above.

For example, as shown in FIG. 10, a ring-shaped handler 68 that holds the entire circumference of the wafer 2 may be used.
Alternatively, as shown in FIG. 11, an electrostatic chuck 69 that contacts and electrostatically attracts the peripheral portion of the wafer 2 may be used. Furthermore, as shown in FIG. 12, a stopper 72 is provided at the orientation flat portion 2c of the wafer 2, and the wafer 2 is held in a substantially non-contact position by utilizing the generation of negative pressure by the inert gas flow 71 blown out from the center. A Bernoulli chuck 70 with a stopper that is held in contact may also be used.

[0110] In the above embodiment, the processing fluid forming a predetermined streamline is supplied to only the first main surface of the plate-shaped object to process only the first main surface, but the present invention is not limited to this. Never. As shown in FIG. 13, the first main surface 2 of the wafer 200
01, a method in which a rotating flow forming fluid supply section is configured opposite to the second main surface 202 is considered.

Specifically, a first main surface rotational flow forming fluid supply section 210 and a first main surface fluid supply control section 211 are configured on the first main surface 201, and a first main surface rotational flow forming fluid supply section 212 is provided on the first main surface 201. supply and process. At the same time, a second main surface rotational flow forming fluid supply section 213 and a second main surface fluid supply control section 214 are configured on the second main surface 202 to supply and process the second main surface rotational flow formation supply fluid 215 .

The wafer handler 203 of this embodiment mechanically holds the wafer by utilizing the angle change of the chamfered portion around the wafer.

[0113] Although the invention made by the present inventor has been specifically explained based on examples, the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. Needless to say.

For example, the plate-shaped object to be processed is not limited to the wafers exemplified in the above embodiments, but can be widely applied to precision surface processing of magnetic disks, optical disks, photomasks, and the like.

[0115]

[Effects of the Invention] Among the inventions disclosed in this application, the effects obtained by the typical inventions are briefly explained as follows.
It is as follows.

(1). Processing fluids such as chemicals are applied to the processing surface of the plate-shaped object while forming predetermined streamlines, so the processing fluid does not stagnate on the processing surface, and the processing fluid is always fresh and clean. is supplied, reliably preventing stagnation and re-adhesion of the peeled foreign matter, making it possible to achieve high-level cleaning treatment of the plate-shaped object using the treatment fluid.

(2). Since the drying process is performed by applying a processing fluid such as an inert gas to the processing surface of the plate-shaped object while forming a predetermined streamline, it is ensured that the vapor and droplets of the evaporating chemical solution are removed together with the processing fluid. Along with being excluded from
There is no re-adhesion to the plate-like object, and highly clean and uniform drying processing can be achieved.

(3). Cleaning treatment for all types of plate-like objects and foreign objects can be performed by combining multiple chemical solutions as the processing fluid that acts on the processing surface of the plate-like object, depending on the type of the plate-like object and the expected foreign objects. can be realized.

(4). From the second main surface of the plate-like object,
Processing is performed on the first main surface while forming an airflow that forcibly flows in the direction reaching the first main surface, which is the front and back sides of the main surface. The atmosphere contained therein is reliably prevented from entering the second main surface, which is the non-processed surface, and the occurrence of contamination on the non-processed surface during processing can be reliably prevented.

(5). By applying ultrasonic energy to the action of the processing fluid, the chemical treatment reaction in the microscopic region of the processing surface of the plate-shaped object and the action of peeling off microscopic foreign matter are promoted, increasing the processing efficiency. .

(6). By using thermal energy to act on the treatment fluid, it is possible, for example, to reduce the time required in the drying process. For example, by using the energy of a microwave electromagnetic field to act on the processing fluid, the wavelength can be set depending on the properties such as the plate-shaped object to be dried and the dielectric constant of the processing fluid, for example. It becomes possible to perform a rapid drying process by accelerating the heating of moisture, and for example, it is possible to reliably prevent the occurrence of water marks (evaporation marks of liquid droplets).

(7). As a result of (1) to (6) above,
For example, highly clean surface treatment of wafers and the like in the process of manufacturing semiconductor devices becomes possible, and the quality and yield of semiconductor devices manufactured by the wafer process can be improved.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an example of the configuration of a plate-shaped object processing apparatus that is an embodiment of the present invention.

FIG. 2 is a plan view showing an example of the configuration of essential parts of a plate-like object processing apparatus according to another embodiment of the present invention.

FIG. 3 is a plan view showing the main parts of a plate-like object processing apparatus according to another embodiment of the present invention.

FIG. 4 is a plan view showing the main parts of a plate-like object processing apparatus according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view of the portion indicated by line V-V in FIG. 4;

FIG. 6 is a schematic cross-sectional view showing an example of the configuration of a plate-shaped object processing apparatus according to still another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing an example of the configuration of a plate-shaped object processing apparatus according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing an example of the configuration of a plate-like object processing apparatus that is still another embodiment of the present invention.

FIG. 9 is an external perspective view showing an example of the configuration of a plate-shaped object processing apparatus according to still another embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view showing an example of the configuration of a ring-shaped handler.

FIG. 11 is a cross-sectional view showing an example of the configuration of an electrostatic chuck.

FIG. 12 is a sectional view showing an example of a Bernoulli chuck with a stopper.

FIG. 13 is a schematic cross-sectional view showing an example of the configuration of a plate-shaped object processing apparatus that is still another embodiment of the present invention.

[Explanation of symbols]

f Processing fluid 1 Processing chamber 1a Opening 2 Wafer 2a Processing surface (first main surface) 2b Non-processing surface (second main surface) 2c Orientation flat section 3 Wafer handler 4 Rotating flow forming fluid supply section 4A Rotating flow forming fluid supply Part 4B Rotating flow forming fluid supply section 5 Fluid supply port 6 Opening direction 7 Involute base circle 8 Fluid supply port 9 Opening direction 10 Fluid supply port 11 Fluid supply port 12 Opening direction 14 Fluid pressurization adjustment chamber 15 Organic solvent supply section 16 Methanol Supply section 17 Pure water supply section 18 Nitrogen gas supply section 19 Organic solvent supply control valve 20 Methanol supply control valve 21 Pure water supply control valve 22 Nitrogen gas supply control valve 23 Exhaust waste liquid recovery section 24 Air flow adjustment plate 25 Exhaust port 26 Clean air flow 27 Processing chamber 27a Opening 28 Rotating flow forming fluid supply section 29 Ultrasonic vibrator 30 Ultrasonic oscillation source 31 Pure water supply section 32 Nitrogen gas supply section 33 Pure water supply control valve 34 Nitrogen gas supply control valve 35 Fluid supply port 36 Forced exhaust flow 37 Clean air flow 38 Processing chamber 39 Wafer 39a Processing surface (first main surface) 39b Non-processing surface (second main surface) 40 Wafer handler 41 Rotating flow forming fluid supply section 42 Etching liquid vapor generation section 43 Water vapor generation section 44 Nitrogen gas supply section 45 Etching liquid vapor control valve 46 Water vapor supply control valve 47 Nitrogen gas supply control valve 48 Exhaust liquid recovery section 49 Nitrogen gas supply section 49a Nitrogen gas 50 Rectifying plate 50a Through hole 51 Quartz plate 52 Infrared lamp 52a Infrared 53 Fluid supply port 54 Processing chamber 55 Wafer handler 56 Wafer 56a Processing surface (first main surface) 56b Non-processing surface (second main surface) 57 Rotating flow forming fluid supply section 58 Fluid supply port 59 Organic solvent supply section 60 Nitrogen gas supply Part 61 Organic solvent supply control valve 62 Nitrogen gas supply control valve 63 Rectifier plate 63a Through hole 64 Waveguide 65 Nitrogen gas supply part 65a Nitrogen gas 66 Microwave electromagnetic field 67 Shield mechanism 68 Ring-shaped handler 69 Electrostatic chuck 70 With stopper Bernoulli chuck 71 Inert gas flow 72 Stopper 100 Cassette 200 Wafer 201 Wafer first main surface 202 Wafer second main surface 203 Wafer handler 210 First main surface rotating flow forming fluid supply section 211 First main surface fluid supply control section 212 1 Main surface rotating flow forming supply fluid 213 2nd
Principal surface rotational flow forming fluid supply section 214 Second principal surface fluid supply control section

Claims (10)

[Claims] 1. A processing fluid supply means for applying a processing fluid to a processing surface of a plate-like object while forming a predetermined streamline, the processing of the plate-like object using the processing fluid. Plate processing equipment. 2. The streamline of the processing fluid has a spiral shape extending from the center of the plate-like object to the peripheral part, and the processing fluid acts on the plate-like object as a rotational flow. The plate-shaped object processing apparatus according to claim 1, characterized by: 3. The method is characterized by comprising an ultrasonic applying means for applying ultrasonic energy to the processing fluid acting on the plate-like object, and performing the processing while applying the ultrasonic energy to the processing fluid. The plate-shaped object processing apparatus according to claim 1 or 2. 4. A heating means for applying thermal energy to the plate-like object, while applying thermal energy to the plate-like object,
4. The plate-shaped material processing apparatus according to claim 1, wherein said processing is performed using said processing fluid. 5. An inert gas flowing from a side of the second main surface to a side of the first main surface during the processing on a second main surface that is opposite to the first main surface of the plate-like object. Claims 1, 2, and 3 further comprising an inert gas supply means for supplying
or 4. The plate-like object processing apparatus according to 4. 6. The plate-shaped object processing apparatus according to claim 1, wherein the processing fluid is a liquid. 7. The plate-like material processing apparatus according to claim 1, wherein the processing fluid is composed of liquid vapor. 8. The plate-shaped object processing apparatus according to claim 1, wherein the processing fluid is made of gas. 9. The plate processing apparatus according to claim 1, wherein the processing fluid is a combination of liquid, liquid vapor, and gas. 10. A processing fluid supply means for applying a processing fluid to a second main surface that is opposite to the first main surface of the plate while forming a predetermined streamline, the processing fluid supplying means for applying a processing fluid to a second main surface that is opposite to the first main surface of the plate-shaped object. 5. The plate-shaped material processing apparatus according to claim 1, wherein the processing is performed on the first main surface and the second main surface.