JPS5999725A - Treating device for wafer - Google Patents
Treating device for waferInfo
- Publication number
- JPS5999725A JPS5999725A JP21026182A JP21026182A JPS5999725A JP S5999725 A JPS5999725 A JP S5999725A JP 21026182 A JP21026182 A JP 21026182A JP 21026182 A JP21026182 A JP 21026182A JP S5999725 A JPS5999725 A JP S5999725A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- processing
- treating
- stage
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims description 57
- 235000012431 wafers Nutrition 0.000 abstract description 73
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 20
- 238000005530 etching Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 9
- 239000003570 air Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000012993 chemical processing Methods 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 241000234435 Lilium Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
軽）発明の技術分野
本発明はウェーハ処理装置に係り、特に半導体ウェーハ
の表面処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a wafer processing apparatus, and more particularly to a surface processing apparatus for semiconductor wafers.
（１）） 技術の背景
半導体装置など、のｉｌ！！！造における半導体ウェー
ハの拡散などのウェーハ処理プロセスにおいては、あら
かじめウェーハに付着している不純物、基液々どを除去
するエツチング洗浄工程、いわゆる前処理が一般に行わ
れている。(1)) Technical background: Semiconductor devices, etc. ! ! In wafer processing processes such as diffusion of semiconductor wafers in manufacturing, an etching cleaning process, so-called pre-treatment, is generally performed to remove impurities, base liquid, etc. that have adhered to the wafer in advance.
（Ｃ）従来技術と問題点
従来ウェーハをエツチング洗浄するｔｉｉＪ処理装置と
しては第」図に示すごとく複数の処理槽、たとえば薬品
処理＋・ａｌにウェーハ薬品処理液を所定量収容ｉ〜、
該粋品処理（″凹１４と並列に水内楯２力祐己設され、
前記ウェーハ３が所定間隙に複数載置されたホルダー治
共４を該薬品処理４１１凸１内に所定時間浸漬して表、
面処理全行い、上下左右に運動する機構により１．自ｉ
Ｊ記デχルグー治具、Φを該共晶処理糟１より引き上げ
、並、Ｊ＋１に配設された水洗体２内に移動しホｌレダ
ー治具Φに載置された前記ウェーハ３を水洗洗浄し、Ｆ
ｉ１１処理されるようＩｃ Ａ’ｊｉｊ成さ八ている。(C) Prior art and problems Conventional tIIJ processing equipment for etching and cleaning wafers has a plurality of processing tanks, for example, chemical processing +/al, containing a predetermined amount of wafer chemical processing solution, as shown in Fig.
This process (2 Mizuuchi shields are installed in parallel with the concave 14,
A holder holder 4 on which a plurality of the wafers 3 are placed at a predetermined interval is immersed in the convex 1 of the chemical treatment 411 for a predetermined time, and then
Complete surface processing is performed, and the mechanism that moves vertically and horizontally allows 1. self i
The wafer 3 placed on the holder jig Φ is lifted up from the eutectic treatment chamber 1 and moved into the water washing body 2 disposed at J+1, and the wafer 3 placed on the holder jig Φ is washed with water. Wash and F
Ic A'jij is formed to be processed i11.
しかしながら上記ウェーハ前控理方法においては、薬品
処坤楯、１内においてエツチング粋埋さハたウェーハ３
−次段の水洗槽２に搬送される途中において共晶処理液
がウェーハ３表面に付ＩＭした状態で空気中にさらされ
ることになり、このウェーハ３が空気中にさらされるこ
とによってゴミや不純物がウェーハ８表面に付ｊ＆して
ウェーハ汚染の原因となりウェーハ３上に形成される素
子の特性に悪い影響をあたえる。又かかるバッチ処理即
ちホルダー治具４にウェーハ３を多数（例えば２５枚）
一度に処理する方法においてはウェーハ３の収納位置に
より、又処理櫓１における処理液のどよみなどのためウ
ェーハ内、ウェーハ間のエツチング洗浄処理が不均一に
なる欠点があり、更に自動化のためのインデックス（ｉ
ｎへｅｘ）による１枚処理のインライン（ｉｎ ７３−
ｎｅ）化には不適当な処理方法であった。However, in the above-mentioned wafer pre-preparation method, the wafer 3 is etched in the chemical treatment plate 1.
- On the way to the next washing tank 2, the eutectic treatment liquid is attached to the surface of the wafer 3 and exposed to the air, and as the wafer 3 is exposed to the air, dust and impurities are generated. is attached to the surface of the wafer 8, causing wafer contamination and adversely affecting the characteristics of elements formed on the wafer 3. In addition, in such batch processing, a large number of wafers 3 (for example, 25 wafers) are placed in the holder jig 4.
In the method of processing all at once, there is a drawback that the etching cleaning process within the wafer and between wafers becomes uneven due to the storage position of the wafers 3 and stagnation of the processing solution in the processing tower 1. (i
Inline processing of one sheet (in 73-
This treatment method was inappropriate for
（４）発明の目的
本発明の目的はかかる問題点に鑑みなをれたもので、ウ
ェーハｉ１枚づつ新群な処理液中に回転しながら処理す
ることによってエツチング洗浄の不均一性を改謔し、か
つ処理液がウェーハ表面に付着した状態で空気中にさら
すことなく純水中で洗浄しながら搬送し、次段の処理容
器にウェーハを収容しうるウェーハ処理装置の提供にあ
る。(4) Purpose of the Invention The purpose of the present invention was made in view of the above-mentioned problems.The purpose of the present invention is to correct the non-uniformity of etching cleaning by rotating and processing each wafer i in a new group of processing liquid. An object of the present invention is to provide a wafer processing apparatus that can transport the wafer while cleaning it in pure water without exposing the wafer surface to the air while the wafer surface is adhered to the processing liquid, and can accommodate the wafer in a processing container at the next stage.
（ｅ） 発明のＩＮ成
その目的を達成するため本発明のウェーハ処理装置は、
処理液の流出口とウェーハ載置ステージを有するウェー
ハ処理容器と、これに嵌合する処理液の流入口を有する
上蓋とからＩＡ′〜成され、ウェーへ′ｆｆ、低置した
ヌテーシ上へ処理液を供給して処理可能とし、処理後に
、該処理容器側面に設けた傾斜を有する搬送溝中を液と
共に送出して次段の処理容器にウェーハを収容する機１
４ｉｌＶ ｆ有すること全特徴とする。(e) IN formation of the invention In order to achieve the object, the wafer processing apparatus of the present invention comprises:
The wafer processing container has a processing liquid outlet and a wafer mounting stage, and an upper lid that fits into the wafer processing container has a processing liquid inlet. A machine 1 that supplies a liquid to enable processing, and after processing, sends the wafer along with the liquid through an inclined conveying groove provided on the side surface of the processing container to accommodate the wafer in the next processing container.
All features include 4ilV f.
（ｆ） 発明の実施例
以下木究明の実施例について図面全参照して具体的に説
明する。第２図は本発明による一実施例のウェーハ処理
装置の模式的（苫成図である、同図において所定の間隙
をへだてて上下に配設はれたウェーハ処理容器ｌＯ及び
１１ｉ＋−１：ウェーハ３がボし水の中音移動する搬送
ｍｌ ３によって連結され該搬送溝１８は所定の傾斜を
有し前記処理容器■０側面の一端に純水供給口１４及び
処理容器１１側面の他端に開閉ドＶイン弁１５を具備し
てなる排水口１６が設けられている。第３図はウェーハ
処理容器１０の拡大分解図を示し、同図において耐桑品
性の拐質よりなる容器２０の中央部に中空なる流出口２
］を有し、該流出口２１内に上下傾斜可動なウェーハ３
を載置するステージ兼ドレインバルブ２２が設けられ、
該ステージ２２と容器２０はシリコンゴムバッキング２
８を介して該ステージの上下運動によって前記流出口２
１が開閉されるように構成され該ステージの周囲側方の
所定位置にガス噴出孔２Φが付設されている、又前記容
器２０に嵌合する上蓋２５ｉｄ薬品処理液流入口２６と
純水流入口２７が配設され所定位置ＶＣ図示したように
ガス噴出孔２８が設けられている。前記上蓋２５は駆動
装置２９によって上下に駆動し該上蓋２５と容器２０は
シリコンゴムバッキング２８′を介して密閉刺止されウ
ェーハ処理空間を形成する構造になっている。第４図は
ウェーハ処理容器１１の要部拡大分解図を示すが同図に
おいて前述したと同様に容器８０の中央部に流出口３１
を有Ｉ−該流出ロ３１内に上下可動なステージ兼ドレイ
ンバルブ３２が設けられ、該ステージ３１には純水ｉ′
−７１ｃ水を排出するリング状の１″ｉ゛通孔８３が榎
数個付設さへ前記谷器３０の上面の所定位置に図示した
ようにウユー−ハのストッパガイド３４が設けられてい
るう父上倫３５にはガス流入口（図示していない）が設
けられ、該上蓋３５．答器３０．及びステー７３２とは
それぞれウェーハ処理容器ｌＯと同様に密閉お１止され
る構造になっている。上述したように１４゛４成された
ウェーハ処理装置を用いてたとえば半尋体ウェーハケエ
ツチング洗浄する場合においてはステージ２２上にウェ
ーハを載置したる後、駆動装置面２９によって上蓋２５
を容器２０に嵌合し、ユリ品処理液流入口２６より処理
液たとえば柘弗酸（ＨＦ ）溶液を処理空間内に供給す
ると同時にカス噴出孔２４・２８より窒素ガスなどのガ
スを該処理空間内に収容された処理液中に噴出してバブ
ルし載置台上のウェーハを浮遊口伝させながら該ウェー
ハの両面を均一にエツチング洗浄する。所定時間エツチ
ング洗浄後、処理電流出口２１を閉じているステージ２
２を上方に可動して開にすると同時に純水流入口２７よ
り純水を注入して処理液と置換を行い、完全に置換が完
了した後、窒素ガスの供給に止めて、上蓋２５を駆動装
置によって上方に移動して開蓋し、ステージ２２上のウ
ェーハを該ステージを搬送溝１３方向へ傾けながら純水
流入口２７からの純水流によって杭理容器ｌＯの側面に
設けられた搬送溝１３へ流ｌｉ１′する。搬送Ｎ１３へ
移行したウェーハは純水供給ロー４より供給される水流
によって傾斜を有する −搬送溝１３内を空気中にさら
されることなく水洗洗浄されながら搬送移動し、該搬送
溝１３に連結された次段のウェーハ処理容器１１内のス
トッパーガイド２４によってステージ３２上に停止し前
述した搬送溝の他端に付設された開閉ドレイン弁１５を
開くことによって純水流水を排水口１６より排水すれば
ステージ３２上のウェーハは該ステージ３２上にソフト
ローデングされる。更にウニ１．１１：１
一ハが載置されたステージ３２が所定位置まで下がり、
と蓋８５の降下によって密閉府止され、熱風乾燥などの
次工程処理が行われ、以下同様の方法のくりかえしによ
って順次ウェーハが処理される。尚次工程の処理の用途
によって流入口を別に設けてもよい。(f) Embodiments of the invention Hereinafter, embodiments of the tree investigation will be specifically described with reference to all the drawings. FIG. 2 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present invention. 3 are connected by a conveyor ml 3 that moves inside the boiling water, and the conveyor groove 18 has a predetermined inclination. A drain port 16 is provided with an opening/closing V-in valve 15. FIG. Hollow outlet 2 in the center
], and a wafer 3 that is movable up and down in the outlet 21 is provided.
A stage/drain valve 22 on which the
The stage 22 and the container 20 are covered with a silicone rubber backing 2.
The outlet 2 is opened by vertical movement of the stage via 8.
1 is configured to be opened and closed, and gas ejection holes 2Φ are provided at predetermined positions on the sides around the stage, and an upper lid 25id that fits into the container 20; a chemical processing liquid inlet 26 and a pure water inlet 27; A gas ejection hole 28 is provided at a predetermined position VC as shown in the figure. The upper lid 25 is driven up and down by a driving device 29, and the upper lid 25 and the container 20 are hermetically sealed through a silicone rubber backing 28' to form a wafer processing space. FIG. 4 shows an enlarged exploded view of the main parts of the wafer processing container 11. In the same figure, there is an outlet 31 in the center of the container 80, as described above.
A vertically movable stage/drain valve 32 is provided in the outflow chamber 31, and the stage 31 is equipped with pure water i'.
-71c Several ring-shaped 1"i" through holes 83 are provided for discharging water, and a stopper guide 34 is provided at a predetermined position on the upper surface of the valley device 30 as shown in the figure. A gas inlet (not shown) is provided in the wafer processing container 35, and the upper lid 35, the reactor 30, and the stay 732 are each constructed to be hermetically sealed in the same way as the wafer processing container IO. For example, when cleaning a semicircular wafer by etching using the wafer processing apparatus constructed as described above, after placing the wafer on the stage 22, the upper lid 25 is moved by the driving device surface 29.
is fitted into the container 20, and at the same time a processing liquid such as a citric acid (HF) solution is supplied into the processing space from the lily product processing liquid inlet 26, a gas such as nitrogen gas is injected from the waste ejection holes 24 and 28 into the processing space. The wafer is ejected and bubbled into the processing liquid contained in the wafer, causing the wafer on the mounting table to float thereon, thereby uniformly etching and cleaning both surfaces of the wafer. Stage 2 in which the processing current outlet 21 is closed after etching cleaning for a predetermined period of time.
2 is moved upward to open it, and at the same time pure water is injected from the pure water inlet 27 to replace the processing liquid. After the replacement is completely completed, the supply of nitrogen gas is stopped and the upper lid 25 is moved to the driving device. The wafer on the stage 22 is tilted toward the conveyance groove 13 while the wafer on the stage 22 is flowed into the conveyance groove 13 provided on the side surface of the pile processing container 10 by the pure water flow from the pure water inlet 27. Do li1'. The wafer transferred to the transfer N13 has an inclination due to the water flow supplied from the pure water supply row 4. - The wafer is transferred while being washed with water without being exposed to the air in the transfer groove 13, and is connected to the transfer groove 13. When the wafer processing container 11 in the next stage is stopped on the stage 32 by the stopper guide 24 and the on-off drain valve 15 attached to the other end of the transport groove described above is opened, the pure water is drained from the drain port 16 and the stage The wafer on stage 32 is soft loaded onto the stage 32. Furthermore, the stage 32 on which the sea urchin 1.11:1 sea urchin was placed was lowered to a predetermined position.
Then, the lid 85 is lowered to seal the wafer, and the next process such as hot air drying is performed, and the wafers are sequentially processed by repeating the same process. Note that an inlet may be provided separately depending on the purpose of processing in the next step.
リ 発明の効果
□ 以上脱晶したように本発明の一実施例によればウェ
ーハを１．枚つつ新しい処理液中に回転しながら処理す
ることによ？てエツチング洗浄の不均一性をなくし、か
つ空畿中にウェーハをさらすことなく純水中で洗浄しな
がら搬送することが可能とケリウェーハ上に形成される
素子の特性の劣化を防止して品質向上に大きな効果があ
る。尚本実施例は本発明の一例としてあげたものであり
本発明の範囲を制限するものではない、Effects of the Invention □ As described above, according to an embodiment of the present invention, the wafer is 1. By processing the sheets while rotating them in new processing solution? This eliminates non-uniformity in etching cleaning and allows the wafer to be transported while being cleaned in pure water without exposing it to the air, thereby improving quality by preventing deterioration of the characteristics of the elements formed on the wafer. has a big effect. Note that this example is given as an example of the present invention and is not intended to limit the scope of the present invention.
第１図は従来のウェーハ処理装置、第２図は本発明によ
る一実施例のウェーハ処理装置の模式的構成図、第３図
はウェーハ処理容器の拡大分解図、′ −膳・
第４図は次段のウェーハ容器の要部拡大分解図である。
図におやて、３はウェーハ、１０・１１はウェーハ処理
容器、１８は搬送溝、２０・３０は容器、２１・３１は
流出口、２２・３２はステージ、２４＋・２８はガス噴
出孔、２５・８５は上蓋、２６は薬品処理液流入口、２
７は純水流入口金示す。
第１図FIG. 1 is a conventional wafer processing apparatus, FIG. 2 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present invention, FIG. 3 is an enlarged exploded view of a wafer processing container, and FIG. FIG. 7 is an enlarged exploded view of the main parts of the next stage wafer container. In the figure, 3 is a wafer, 10 and 11 are wafer processing containers, 18 is a conveyance groove, 20 and 30 are containers, 21 and 31 are outlet ports, 22 and 32 are stages, 24+ and 28 are gas injection holes, 25 and 85 are upper lids, 26 are chemical processing liquid inlets, 2
7 shows the pure water inlet. Figure 1
Claims (1)
ーハ処理容器と、これに嵌合する処理液の流入口を有す
る上蓋とから構成され、ウェーハを載置したステージ上
へ処理液を供給して処理可能とし、処理後に該処理容器
側面に設けた傾斜を有する搬送溝中を液と共に送出して
、次段の処理容器にウェーハを収容する機構を有するこ
とを特徴とするウェーハ処理装置。It is composed of a wafer processing container having a processing liquid outlet and a wafer mounting stage, and an upper lid that fits into the wafer processing container and having a processing liquid inlet, and supplies the processing liquid onto the stage on which the wafer is placed. A wafer processing apparatus that is capable of processing a wafer, and has a mechanism for sending the wafer along with a liquid through an inclined conveying groove provided on the side surface of the processing container after processing, and storing the wafer in the next processing container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21026182A JPS5999725A (en) | 1982-11-29 | 1982-11-29 | Treating device for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21026182A JPS5999725A (en) | 1982-11-29 | 1982-11-29 | Treating device for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5999725A true JPS5999725A (en) | 1984-06-08 |
Family
ID=16586449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21026182A Pending JPS5999725A (en) | 1982-11-29 | 1982-11-29 | Treating device for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5999725A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192637U (en) * | 1986-05-28 | 1987-12-08 | ||
| JP2010074140A (en) * | 2008-08-22 | 2010-04-02 | Toshiba Corp | Substrate treatment apparatus, and substrate treatment method |
-
1982
- 1982-11-29 JP JP21026182A patent/JPS5999725A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192637U (en) * | 1986-05-28 | 1987-12-08 | ||
| JP2010074140A (en) * | 2008-08-22 | 2010-04-02 | Toshiba Corp | Substrate treatment apparatus, and substrate treatment method |
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