JP2000031378A - Power semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily dissipate heat generated from a power semiconductor module at the time of operation. SOLUTION: This semiconductor module consists of a metal base 3, a CBC substrate 2 which is soldered to the metal base 3 and constituted of a ceramics plate 3 for insulation, a copper plate 4 stuck on one surface of the ceramics plate, and a copper circuit 5 stuck on the other surface, and output terminals 7b for leading-out to the outside which are directly soldered to the upper part of the power semiconductor chip and bottom parts 7b1 of which are soldered to the CBC substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module.

[0002]

2. Description of the Related Art FIG.
There is something like that shown in In FIG. 2, 1 is IGB
It is a power semiconductor chip such as T, MOSFET, bipolar transistor, thyristor, diode and the like. 2 is C
On a BC substrate, a copper plate 4 is attached to one surface of an insulating ceramic plate 3 in a state of being molecularly bonded.
On the other surface, a copper circuit 5 is attached in a state of being molecularly bonded to the ceramic plate 3. One output terminal plate 6a is soldered to a required portion on the copper circuit 5, and the power semiconductor chip 1 is further soldered on the output terminal plate 6a. The other output terminal plate 6b is soldered on the power semiconductor chip. The CBC substrate on which the power semiconductor chip 1 is mounted is soldered to a metal base 8 such as copper or iron. Thereafter, a resin case 9 is bonded onto the metal base 8, and the resin 1 is placed in the case.
0 is injected for sealing.

When the power semiconductor module is mounted and used by passing a current, the power semiconductor chip 1 generates heat. The generated heat of the power semiconductor chip 1 is converted into CBC
The electric current is transmitted to the metal base 8 via the substrate 2 and is emitted from the radiator to which the metal base 8 is fixed.

[0004]

However, in this power semiconductor module, heat is radiated from one direction of the power semiconductor chip through the metal base 8 and the radiator, so that it is necessary to take a sufficiently large thermal design.

[0005]

According to a first aspect of the present invention, there is provided a power semiconductor module, comprising: a metal base; a ceramic plate for soldering to the metal base; an insulating ceramic plate; and a copper plate attached to one surface of the ceramic plate. And a CBC substrate composed of a copper circuit adhered to the other surface, a power semiconductor chip soldered on the copper circuit, and a bottom part directly soldered to the top of the power semiconductor chip. And an output terminal board soldered to the CBC board.

That is, a power semiconductor chip is soldered on a copper circuit, and a CBC substrate to which the copper circuit is attached is soldered to a metal base. On the other hand, an output terminal plate for external drawing is directly soldered to the upper part of the power semiconductor chip, and the output terminal plate is further soldered to the CBC substrate at the bottom partway.

Accordingly, the heat of the power semiconductor chip generated when the power semiconductor module is used is released on one surface of the power semiconductor chip to the metal base via the CBC substrate, and the heat of the power semiconductor chip is reduced. The other surface is emitted from the output terminal plate for external drawing through the CBC substrate and the metal base.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIG. In FIG. 1, those having the same reference numerals as those in FIG. 2 indicate those having the same functions. FIG. 1 differs from FIG.
In FIG. 1, the plate-like output terminal plates 6a and 6b are provided directly on the power semiconductor chip 1 or on a copper circuit, and are drawn out of the resin case. The output terminals are once drawn out of the resin case after being soldered to the copper circuit of the CBC board.

That is, 1 is an IGBT, MOSFET,
It is a power semiconductor chip such as a bipolar transistor and a thyristor. Reference numeral 2 denotes a CBC substrate, which is attached to one surface of an insulating ceramic plate 3 in a state of being molecularly bonded, and a copper circuit 5 is bonded to the other surface in a state of being molecularly bonded to the ceramic plate 3. It is attached. Reference numeral 8 denotes a metal base on which a solder foil is mounted or cream solder is applied, and the CBC substrate 2 is mounted on the solder. A solder foil is mounted on a predetermined portion of the CBC substrate, or cream solder is applied, and a first output terminal plate 7a to be drawn out is mounted on the solder. This output terminal plate 7
a, a solder foil or cream solder is applied, and the power semiconductor chip 1 is mounted on the solder.
Further, a solder foil is mounted on the power semiconductor chip 1 or cream solder is applied thereon, and a second
Is mounted.

The above-mentioned second output terminal plate 7b is once bent downward, and the bottom 7b1 is in contact with the CBC substrate 2. The bottom 7b1 of the output terminal 7b and the CBC substrate 2
Is provided between them. Then, this is put into a reflow furnace, and the metal base 8, the CBC substrate 2, the first
The output terminal plate 7a, the power semiconductor chip 1 and the second output terminal 7b are soldered and the second output terminal plate 7
b and the CBC board 2 are also soldered. Thereafter, a resin case 9 is adhered onto the metal base 8, and a resin 10 is injected into the case, whereby the power semiconductor chip 1 is sealed.

When the power semiconductor module is mounted and used by passing a current, the power semiconductor chip 1 generates heat. The generated heat of the power semiconductor chip 1 is conducted to the metal base 8 via the output terminal plate 7a and the CBC substrate 2, and the heat of the power semiconductor chip 1 is transferred to the second output terminal plate 7b and the bottom thereof. 7b1 and the metal base 8 via the CBC substrate 2. Then, heat is efficiently released from the metal base 8 via a radiator (not shown).

That is, the heat of the power semiconductor chip 1 is released from both sides through the gold CBC substrate 2 and the metal base 6. Therefore, the size of the radiator to which the metal base 6 can be attached can be reduced.

In the above embodiment, one power semiconductor chip is described, but the present invention can be applied to two or more power semiconductor chips.

[0014]

According to the power semiconductor module of the present invention, heat generated from the power semiconductor chip during use is efficiently radiated from the metal base from both sides of the power semiconductor chip via the CBC substrate.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a power semiconductor module of the present invention.

FIG. 2 is a sectional view of a conventional power semiconductor module.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 power semiconductor chip 2 CBC board 3 ceramic plate 4 copper plate 5 copper circuit 7 a first output terminal plate 7 b second output terminal plate 7 b 1 bottom 8 metal base 9 resin case

Claims (1)

[Claims] 1. A semiconductor device comprising: a metal base; a ceramic plate for insulation, which is soldered to the metal base; a copper plate bonded to one surface of the ceramic plate; and a copper circuit bonded to the other surface. A CBC substrate, a power semiconductor chip soldered on the copper circuit, and soldering directly on top of the power semiconductor chip, and
A power semiconductor module comprising an external lead-out output terminal plate soldered to a BC substrate.