JP2000010122A - Liquid crystal panel, projection type liquid crystal display device using the same as well as electronic appliance and production of liquid crystal panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To embody a liquid crystal panel capable of making bright display even if the leakage of light from the boundary regions of pixel electrodes is prevented, a projection type liquid crystal display panel using the same as well as an electronic appliance and a process for producing this liquid crystal panel. SOLUTION: The TFTs 30, light shielding films 11a and pixel electrodes 9a of the liquid crystal panel 100 formed with the light shielding films 11a along the boundary regions of the pixel electrodes 9a arranged in a matrix form with each other are formed in this order on a TFT array substrate 10 by interposing second interlayer insulating films 7a and third interlayer insulating films 7b therebetween. Reflection surfaces 111 which reflect part of the light entering from the side of a counter substrate 20 toward the pixel electrodes 9a and this light incident thereon are formed on the light shielding films 11a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal panel, a projection type liquid crystal display device using the same, an electronic apparatus, and a method for manufacturing a liquid crystal panel. More specifically, the present invention relates to a light-shielding technique for a boundary region between pixel electrodes arranged in a matrix.

[0002]

2. Description of the Related Art Among a pair of substrates sandwiching a liquid crystal, pixels each having a pixel electrode and a pixel switching thin film transistor (hereinafter referred to as TFT) for driving the pixel electrode are arranged in a matrix on one of the substrates. The liquid crystal panel is used as a display device of various devices or as a light valve of a projection type liquid crystal display device.

In this type of liquid crystal panel, the substrate on which the pixel electrodes 9a and the pixel switching TFTs 30 are formed in the layout shown in FIG. 2 is called a TFT array substrate 10 or the like. The data line 6a, the scanning line 3a, and the capacitance line 3b
Are formed. As described above, the data line 6a, the scanning line 3a, and the capacitor line 3b are located in the boundary region between the pixel electrodes 9a.
However, if light passes through these wirings or leaks through the gap between these wirings and the pixel electrode 9a, the display quality is degraded. Therefore, conventionally, the light shielding film 11a is formed along the boundary region between the pixel electrodes 9a.
Are often formed.

In forming the light-shielding film 11a, as shown in FIGS. 27 and 28, a TFT 30, a light-shielding film 11a and a pixel electrode 9a are interposed between a lower-layer interlayer insulating film 7a and an upper-layer interlayer insulating film, respectively. 7b are often formed on the TFT array substrate 10 in this order. Here, since the light-shielding film 11a is formed so as to overlap the data line 6a and the like, it is formed in a relatively flat region on the upper surface of the lower interlayer insulating film 7a. The light-shielding film 11a is formed by forming a chromium film or the like on the upper surface of the lower interlayer insulating film 7a, forming a resist mask, and then performing wet etching or the like, thereby forming a substantially uniform film. It is formed thick. Therefore, the upper and lower surfaces of the light shielding film 11a are parallel to the TFT array substrate 10, that is, the liquid crystal panel 100
Is perpendicular to the incident light L1 (or the incident light L2). Therefore, for example, when light (incident light L1) enters from the side of the counter substrate 20 that sandwiches the liquid crystal 50 with the TFT array substrate 10, the light applied to the boundary region of each pixel electrode 9a is reflected. As shown as light L1 ″, the light is reflected toward the opposing substrate 20 on the upper surface of the light-shielding film 11a, so that the light does not leak to the TFT array substrate 10 through the boundary region between the pixel electrodes 9a. When light (incident light L2) is incident from the side of the array substrate 10, the light applied to the boundary region of each pixel electrode 9a is reflected light L2 ″.
Since the light is reflected toward the TFT array substrate 10 on the lower surface of the light-shielding film 11a, it does not leak from the counter substrate 20 side through the boundary region between the pixel electrodes 9a.

[0005]

However, in the liquid crystal panel 100, the incident light can be transmitted to the liquid crystal 5 with high efficiency.
0 and the more the light is emitted through the pixel electrode 9a, the brighter the display can be. However, as in the conventional case, all of the light applied to the boundary region of the pixel electrode 9a is blocked by the light shielding film 11a.
In the configuration where the light is reflected toward the counter substrate 20 or the insulating substrate 10, the light applied to the boundary region of the pixel electrode 9a is reflected as reflected light L1 ″ and L2 ″ and does not contribute to display at all. Become. Therefore, the conventional liquid crystal panel 1
No. 00 has a problem that, when trying to prevent light leakage, the utilization efficiency of incident light is reduced and a bright display cannot be performed. In particular, in order to more reliably prevent light from leaking from the boundary region of each pixel electrode 9a, the wider the light-shielding film 11a is formed, the lower the utilization efficiency of incident light is, and the darker the display becomes. I will.

[0006] In view of the above problems, an object of the present invention is to provide:
An object of the present invention is to realize a liquid crystal panel capable of performing bright display even when light is prevented from leaking from a boundary region between pixel electrodes, and a method for manufacturing the same.

Another object of the present invention is to realize a projection type liquid crystal display device and an electronic apparatus capable of performing bright and high-quality display by using such a liquid crystal panel.

[0008]

In order to solve the above problems, according to the present invention, a pixel electrode is provided on a first one of a first substrate and a second substrate which sandwich a liquid crystal. And thin film transistors for driving the pixel electrodes are arranged in a matrix, and at least one of the first and second substrates is shielded from light along a region corresponding to a boundary between adjacent pixel electrodes. In a liquid crystal panel having a film formed thereon, the light-shielding film has a reflection surface that reflects a part of light incident from one of the first and second substrates. .

In the invention according to a second aspect, in the first aspect, the reflection surface of the light shielding film reflects a part of light incident from one of the first and second substrates. And is formed so as to be incident on each of the pixel electrodes located on both sides of the light shielding film.

In the liquid crystal panel configured as described above, since a light-shielding film is formed in a boundary region between the pixel electrodes, light applied to the boundary region is reflected by the light-shielding film. Therefore, since there is no light leakage from the boundary region between the pixel electrodes, high-quality display can be performed. In addition, even if the light applied to the boundary area of the pixel electrode is reflected by the light shielding film, the light shielding film has a reflection surface that allows the light applied to the pixel electrode to enter the pixel electrode. The reflected light will contribute to the display. Therefore, light can be prevented from leaking from the boundary region between the pixel electrodes, and the utilization efficiency of the incident light can be increased, so that a bright display can be performed. Further, in order to more reliably prevent light from leaking from the boundary region of the pixel electrode, the light-shielding film may be formed wide. Even in this case, since the utilization efficiency of incident light does not decrease, high quality and bright display can be performed.

The present invention can be applied to a light-shielding film formed on either the first substrate side or the second substrate side. Therefore, the invention according to claims 3 to 15 described below is an embodiment in which the present invention is applied to a light shielding film formed on the first substrate side, and the invention according to claims 16 to 22 corresponds to the second substrate. This is an embodiment in which the present invention is applied to a light shielding film formed on the side.

According to a third aspect of the present invention, in the first or second aspect, the thin film transistor, the light shielding film, and the pixel electrode are provided with a lower interlayer insulating film and an upper interlayer insulating film interposed therebetween. It is characterized by being formed on the first substrate in order. That is, when the light shielding film is formed on the first substrate side, a thin film transistor, a lower interlayer insulating film, the light shielding film, an upper interlayer insulating film, and a pixel electrode are formed in this order.

According to a fourth aspect of the present invention, in the third aspect, the light shielding film reflects a part of light incident from a second substrate side of the first and second substrates to form the pixel. It is characterized in that the reflection surface for entering the electrode is provided as an inclined surface or a curved surface on the upper surface of the light shielding film.
With this configuration, in addition to the light reflected on the reflection surface of the light-shielding film being directly incident on the pixel electrode, the light reflected on the opposite substrate is reflected on the opposite substrate side and incident on the pixel electrode, and is displayed on the display. Will contribute.

According to a fifth aspect of the present invention, in the fourth aspect, the light-shielding film has a thickness that continuously changes in a region corresponding to the reflection surface. The surface is formed.

According to a sixth aspect of the present invention, in the fifth aspect, the light-shielding film includes a plurality of the reflecting surfaces each formed of an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode. It is characterized in that it is provided at a location.

In the invention according to claim 7, in claim 5, the light-shielding film is continuously thinned from the center in the width direction to both sides, so that both ends of the upper surface of the light-shielding surface are provided. Wherein the reflection surface is formed.

In the invention according to claim 8, in claim 4, in the light shielding film, a region corresponding to the reflection surface is formed on an inclined surface or a curved surface of the lower interlayer insulating film. The reflection surface is formed on the upper surface of the light shielding surface.

According to a ninth aspect of the present invention, in the light emitting device according to the eighth aspect, the light-shielding film includes a plurality of the reflecting surfaces each formed of an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode. It is characterized in that it is provided at a location.

In the invention according to claim 10, in claim 8, the light-shielding film is formed such that both end portions in the width direction are formed on an inclined surface or a curved surface of the lower interlayer insulating film. The reflection surface is formed at both end portions of the upper surface of the light shielding surface.

According to an eleventh aspect of the present invention, in the third aspect, the light shielding film reflects a part of light incident from a second substrate side of the first and second substrates to form the pixel. It is characterized in that the reflection surface to be incident on the electrode is provided as a fine uneven surface on the upper surface of the light shielding film. With this configuration, the light irregularly reflected on the reflection surface of the light-shielding film is directly incident on the pixel electrode, and the light irregularly reflected on the counter substrate is reflected on the counter substrate side and is incident on the pixel electrode, which is used for display. Will contribute.

According to a twelfth aspect of the present invention, in the third aspect, the light shielding film reflects a part of light incident from the first substrate side of the first and second substrates to form the light shielding film. It is characterized in that the reflection surface for entering the pixel electrode is provided as an inclined surface or a curved surface on the lower surface of the light shielding film.

According to a thirteenth aspect of the present invention, in the twelfth aspect, in the light shielding film, a region corresponding to the reflection surface is formed on an inclined surface or a curved surface of the lower interlayer insulating film. The reflection surface is formed on the lower surface of the light shielding film.

According to a fourteenth aspect of the present invention, in the thirteenth aspect, the light-shielding film includes a plurality of the reflecting surfaces each formed of an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode. It is characterized in that it is provided at a location.

According to a fifteenth aspect, in the thirteenth aspect, the light-shielding film is formed such that both end portions in the width direction are formed on an inclined surface or a curved surface of the lower interlayer insulating film. The reflection surface is formed at both end portions of the lower surface of the light shielding surface.

According to a sixteenth aspect, in the first or second aspect, the light-shielding film is formed on the side of the second substrate. The light shielding film in this case is
Light incident from the first substrate side or light incident from the second substrate side and reflected by the first substrate is reflected and incident toward the pixel electrode.

According to a seventeenth aspect of the present invention, in the sixteenth aspect, the light-shielding film is provided on the second substrate so that light emitted from the first substrate side of the first and second substrates is not irradiated. The light-reflecting film is characterized in that the reflection surface for reflecting a part of the light and entering the pixel electrode is provided on the upper surface of the light-shielding film as an inclined surface or a curved surface.

[0027] In the invention according to claim 18, in claim 17, the light-shielding film has a film thickness continuously changing in a region corresponding to the reflection surface, so that the light-shielding film is formed on the upper surface of the light-shielding surface. The surface is formed.

According to a nineteenth aspect, in the eighteenth aspect, the light-shielding film includes a plurality of the reflecting surfaces each formed of an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode. It is characterized in that it is provided at a location.

According to the twentieth aspect, in the eighteenth aspect, the thickness of the light shielding film is continuously reduced from the center in the width direction to both sides, so that both ends of the upper surface of the light shielding surface are provided. Wherein the reflection surface is formed.

According to a twenty-first aspect of the present invention, in the sixteenth aspect, the light-shielding film reflects a part of light emitted from the first substrate side of the first and second substrates to form the light-shielding film. It is characterized in that the reflection surface for entering the pixel electrode is provided on the upper surface of the light shielding film as a fine uneven surface.

In the invention according to claim 22, in any one of claims 1 to 21, the light-shielding film is made of titanium, chromium, tungsten, tantalum, molybdenum, palladium, aluminum, an alloy of these metals, and silicon. Characterized by being formed by any one of the above.

The invention according to claim 23 is characterized in that a projection type liquid crystal display device is constituted by using the liquid crystal panel defined in any one of claims 1 to 22 as a light valve.

According to a twenty-fourth aspect of the present invention, an electronic apparatus is configured by using the liquid crystal panel defined in any one of the first to twenty-second aspects as a display device.

In the invention according to claim 25, claim 5
In the method of manufacturing a liquid crystal panel defined in 7, 17, or 19, when forming the light-shielding film, after forming a thin film for forming the light-shielding film, a region substantially overlapping with a region where the light-shielding film is to be formed is formed. When forming a covering resist mask on the upper surface of the thin film, the side edge of the resist mask is positioned in a region where the reflection surface is to be formed, and thereafter, the dry etching is performed on the thin film with an etching gas containing oxygen. Is performed.

In this manufacturing method, when a thin film is etched using an etching gas containing oxygen, not only the thin film is etched, but also the resist mask is etched (ashed) by oxygen from the upper surface and the side surfaces with time. . As a result, even in the portion of the thin film covered with the resist mask, the portion corresponding to the edge of the resist mask is etched, and the portion corresponding to the side edge of the resist mask is etched more. Therefore, in the light-shielding film patterned and formed from the thin film, the film thickness continuously changes in the portion located at the side edge of the resist mask. That is, the portion located on the side edge of the resist mask on the upper surface of the light-shielding film is etched into an inclined shape or a curved shape. Therefore, a reflection surface formed of an inclined surface or a curved surface is easily formed on the upper surface of the light shielding film.

According to a twenty-sixth aspect of the present invention, in the method for manufacturing a liquid crystal panel according to the eighth or tenth aspect, in forming the light-shielding film, after forming the lower-layer interlayer insulating film, When forming a resist mask covering an area substantially overlapping with a formation scheduled area on the upper surface of the lower interlayer insulating film, a side edge of the resist mask is located in an area where the reflection surface is to be formed, and then Forming an inclined or curved surface on the upper surface of the lower interlayer insulating film by performing dry etching on the upper surface of the lower interlayer insulating film with an etching gas containing oxygen, and then forming the inclined surface or the curved surface on the upper surface of the lower interlayer insulating film. A thin film for forming a light shielding film is formed, and thereafter, the thin film is patterned to form the light shielding film.

Also in the present invention, when the upper surface of the lower interlayer insulating film is etched using an etching gas containing oxygen, the resist mask is also etched (ashed) from the upper surface and the side surfaces. As a result, even the portion covered with the resist mask in the lower interlayer insulating film, the portion corresponding to the end of the resist mask is etched,
Further, the portion corresponding to the side edge of the resist mask is etched more. Therefore, the thickness of the lower interlayer insulating film changes continuously in the portion located at the side edge of the resist mask. Therefore, on the upper surface of the lower interlayer insulating film, the portion located at the side edge of the resist mask is etched into an inclined shape or a curved shape. Since an inclined surface or a curved surface is formed on the upper surface of the lower interlayer insulating film in this manner, if a light shielding film is formed on the upper surface of the lower interlayer insulating film, the inclined surface or the curved surface of the lower interlayer insulating film is formed. Is reflected on the upper surface of the light shielding film. As a result, a reflection surface composed of an inclined surface or a curved surface is formed on the upper surface of the light shielding film.

According to a twenty-seventh aspect of the present invention, in the method for manufacturing a liquid crystal panel as defined in the thirteenth or fifteenth aspect, in forming the light-shielding film, after forming the lower interlayer insulating film, When forming a resist mask having a window opened in a region substantially overlapping with a formation scheduled region on the upper surface of the lower interlayer insulating film, a side edge of the resist mask is located in a region where the reflection surface is to be formed, Next, dry etching is performed on the upper surface of the lower interlayer insulating film with an etching gas containing oxygen to form an inclined surface or a curved surface on the upper surface of the lower interlayer insulating film, and then the upper surface of the lower interlayer insulating film is formed. Forming a thin film for forming the light shielding film, and thereafter patterning the thin film to form the light shielding film.

In the present invention as well, when the insulating film is etched using an etching gas containing oxygen, the resist mask is also etched (ashed) from the upper surface and the side surfaces. As a result, even in the portion covered with the resist mask in the lower interlayer insulating film,
The portion corresponding to the end of the resist mask is etched, and the portion corresponding to the side edge of the resist mask is etched more. Therefore, an inclined surface or a curved surface is formed on the upper surface of the lower interlayer insulating film. If a light shielding film is formed on the upper surface of the lower interlayer insulating film, it corresponds to the inclined surface or the curved surface of the lower interlayer insulating film. In this portion, a reflection surface formed of an inclined surface or a curved surface is formed on the lower surface of the light shielding film.

According to a twenty-eighth aspect of the present invention, in any one of the twenty-fifth to twenty-fifth aspects, the resist mask is formed as a plurality of resist masks arranged in parallel in a width direction of a region where the light shielding film is to be formed. The present invention is characterized in that a side edge of a resist mask is located in a region where the reflection surface is to be formed. According to this structure, claims 6, 9, 1
A light-shielding film having a structure defined in 4 or 18 can be formed. That is, an inclined surface or a curved surface is formed in the light-shielding film or the lower interlayer insulating film at each side edge of a plurality of resist masks arranged in parallel in the width direction of the region where the light-shielding film is to be formed. It is possible to easily form a plurality of reflection surfaces formed of inclined surfaces or curved surfaces on the light shielding film.

According to a twenty-ninth aspect of the present invention, in the method for manufacturing a liquid crystal panel according to the eleventh or twenty-first aspect, when forming the light-shielding film, it is preferable that a metal film for forming the light-shielding film is formed. Forming the irregularities by roughening the upper surface of the metal film by the heat treatment, and then patterning the metal film to form the light-shielding film.

[0042]

Embodiments of the present invention will be described with reference to the drawings.

Embodiment 1 (Overall Configuration of Liquid Crystal Panel) The configuration and operation of a liquid crystal panel to which the present invention is applied will be described with reference to FIGS. FIG. 1 is an equivalent circuit diagram of various elements, wiring, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal panel. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, light shielding films, and the like are formed. 3 and 4 are a cross-sectional view at a position corresponding to line AA 'in FIG. 2 and a cross-sectional view at a position corresponding to line BB' in FIG. 2, respectively. FIG. 5 is a plan view showing a two-dimensional wiring layout of the TFT array substrate. In these figures, the scale of each layer and each member is made different in order to make each layer and each member a size recognizable in the drawings.

In FIG. 1, in a screen display area of a liquid crystal panel, a plurality of pixels formed in a matrix form each have a pixel switching TFT 30 for controlling a pixel electrode 9a. Is electrically connected to the source of the TFT 30. Pixel signals S1 and S to be written to the data line 6a
2... Sn may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Also, the TFT 30
The scanning line 3a is electrically connected to the gate of the scanning line 3a, and the scanning signal G is pulsed to the scanning line 3a at a predetermined timing.
1, G2... Gm are applied in this order in a line-sequential manner. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and when the TFT 30 serving as a switching element is turned on for a certain period, the pixel signals S1 and S2 supplied from the data line 6a are turned on.
... Sn is written into each pixel at a predetermined timing. The pixel signals S1, S2,... Sn of a predetermined level written in the liquid crystal via the pixel electrodes 9a in this manner are held for a certain period between the electrodes and a counter electrode formed on a counter substrate described later. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the case of the normally white mode, incident light is not allowed to pass through this liquid crystal portion according to the applied voltage, and in the case of the normally black mode,
The incident light can pass through the liquid crystal portion according to the applied voltage. As a result, light having a contrast corresponding to the pixel signal is emitted from the liquid crystal panel as a whole.

Here, in order to prevent the held pixel signal from leaking, a storage capacitor 70 may be added in parallel with a liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time during which the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal panel 100 having a high contrast ratio can be realized. The method of forming the storage capacitor 70 may be either the case where the storage capacitor 70 is formed between the capacitor line 3b which is a wiring for forming a capacitor or the case where the storage capacitor 70 is formed between the storage line 70 and the preceding scanning line 3a. Is also good.

In FIG. 2, a plurality of transparent pixel electrodes 9a are arranged in a matrix on a TFT array substrate of a liquid crystal panel.
(A contour is shown by a dotted line portion 9a ') is formed for each pixel, and a data line 6a, a scanning line 3a, and a capacitance line 3b are formed along a vertical and horizontal boundary region of the pixel electrode 9a. The data line 6a is electrically connected to a source region to be described later in the semiconductor layer 1a made of a polysilicon film via the contact hole 5, and the pixel electrode 9a is connected to the source layer in the semiconductor layer 1a via the contact hole 8. It is electrically connected to a drain region described later. In addition, the scanning line 3a (gate electrode) passes through the semiconductor layer 1a so as to face a channel formation region described later (a hatched region inclined downward to the right in the figure).

As shown in FIGS. 3 and 4, the liquid crystal panel 100 includes a TFT array substrate 10 (first substrate) and an opposing substrate 20 (second substrate) disposed opposite to the TFT array substrate 10. . The TFT array substrate 10 is made of, for example, a quartz substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate. A pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film (not shown) on which a predetermined alignment process such as a rubbing process has been performed is formed above the pixel electrode 9a. The pixel electrode 9a is made of, for example, a transparent conductive thin film such as an ITO film (indium tin oxide film). The alignment film is made of, for example, an organic thin film such as a polyimide thin film.

Each pixel electrode 9 is provided on the TFT array substrate 10.
A pixel switching TFT 30 for controlling switching of each pixel electrode 9a is formed at a position adjacent to a. This TFT 30 is an LDD (Lightly Doped Drai).
n) The channel forming region 1 of the semiconductor film 1a having a structure, in which a channel is formed by a scanning line 3a (gate electrode) and an electric field of a scanning signal supplied from the scanning line 3a.
a ', a gate insulating film 2 for insulating the scanning line 3a from the semiconductor layer 1a, a data line 6a (source electrode), a lightly doped source region (source side LDD region) 1b and a lightly doped drain region (drain side) of the semiconductor layer 1a. LDD region) 1c, and a high concentration source region 1d and a high concentration drain region 1e of the semiconductor layer 1a. High concentration drain region 1e
, A corresponding one of the plurality of pixel electrodes 9a is electrically connected. As described later, the source regions 1b and 1d and the drain regions 1c and 1e have a predetermined concentration for the n-type depending on whether an n-type channel or a p-type channel is formed in the semiconductor layer 1a. Alternatively, it is formed by doping a p-type dopant. An n-type channel TFT has the advantage of a high operating speed, and is often used as a TFT for pixel switching.

In this embodiment, the data line 6a (source electrode) is formed of a metal film such as aluminum or an alloy film such as metal silicide. In addition, a contact hole 5 leading to the high-concentration source region 1d is formed on the scanning line 3a (gate electrode), the gate insulating film 2, and the underlying protective film 12.
And a first interlayer insulating film 4 in which a contact hole 8 leading to the high-concentration drain region 1e is formed. The data line 6a (source electrode) is connected to the high-concentration source region 1 through the contact hole 5 to the source region 1d.
d. Further, the data line 6a
On the (source electrode) and the first interlayer insulating film 4, a second interlayer insulating film 7a (lower interlayer insulating film) is formed. On the second interlayer insulating film 7a, a third interlayer insulating film 7b ( An upper-layer interlayer insulating film) is formed. Here, the pixel electrode 9a
Is formed on the third interlayer insulating film 7b, the contact holes 8 are formed in the second interlayer insulating film 7a and the third interlayer insulating film 7b so as to communicate with the high-concentration drain region 1e. Therefore, the pixel electrode 9a is electrically connected to the high-concentration drain region 1e through the contact hole 8 to the high-concentration drain region 1e. The pixel electrode 9a
The high concentration drain region 1e may be electrically connected to the aluminum electrode formed simultaneously with the data line 6a or the polysilicon electrode formed simultaneously with the scanning line 3b.

Here, the TFT 30 preferably has the LDD structure as described above, but has an offset structure in which impurity ions are not implanted into regions corresponding to the low-concentration source region 1b and the low-concentration drain region 1c. You may. Further, the TFT 30 may be a self-aligned TFT in which high concentration source and drain regions are formed in a self-aligned manner by implanting impurity ions at a high concentration using the gate electrode 3a as a mask. In the present embodiment, TF
Although only one gate electrode (data line 3a) of T30 is arranged between the source-drain regions 1b and 1e, two or more gate electrodes may be arranged between them. At this time, the same signal is applied to each gate electrode. In this way, the TF is required for dual gate (double gate) or triple gate or more.
With the configuration of T, leakage current at the junction between the channel and the source-drain region can be prevented, and the off-state current can be reduced. At least one of these gate electrodes is L
With a DD structure or an offset structure, the off-state current can be further reduced, and a stable switching element can be obtained.

In this embodiment, the gate insulating film 2 of the TFT 30
Is extended from a position facing the gate electrode 3a to be used as a dielectric film, a semiconductor 1a is extended to be a first electrode 1f, and a part of the capacitance line 3b opposed to these is a second electrode. Thus, the storage capacitor 70 is configured. More specifically, a high-concentration drain region 1e of the semiconductor 1a is extended below the data line 6a and the scanning line 3a, and a gate insulating film is formed on the capacitance line 3b also extending along the data line 6a and the scanning line 3a. The first electrode (semiconductor layer) 1f is opposed to the first electrode (semiconductor layer) 2 via a dielectric film 2 (dielectric film). Here, the insulating film 2 as a dielectric of the storage capacitor 70
Is a TF formed on a polysilicon film by high-temperature oxidation.
Since it is nothing but the gate insulating film 2 of T30, it can be a thin and high withstand voltage insulating film. Therefore, the storage capacitor 70 can be configured as a large-capacity storage capacitor with a relatively small area. As a result, the region below the data line 6a and the scanning line 3
The storage capacitance for the pixel electrode 9a can be increased by effectively utilizing the space outside the opening region, that is, the region parallel to a (i.e., the region where the capacitance line 3b is formed).

On the other hand, a counter electrode (common electrode) 21 is provided on the entire surface of the counter substrate 20, and an alignment film (a predetermined alignment process such as rubbing process) is provided below the counter electrode (common electrode). (Not shown)). Counter electrode 21
Is also made of a transparent conductive thin film such as an ITO film. The alignment film of the counter substrate 20 is also made of an organic thin film such as a polyimide thin film. The opposing substrate 20 may have opposing substrate-side light-shielding films 23 formed in a matrix in a region other than the opening region of each pixel. For this reason, the incident light L1 from the side of the counter substrate 20 is applied to the channel forming region 1a 'of the semiconductor layer 1a of the TFT 30 or the LDD (Lightly Doped Drain
) It does not reach the areas 1b and 1c. Further, the opposing substrate-side light-shielding film 23 has functions such as improvement of contrast and prevention of color mixture of color materials.

The TFT array substrate 10 thus configured
And the opposing substrate 20 are arranged so that the pixel electrode 9a and the opposing electrode 21 face each other, and between these substrates,
The liquid crystal 50 is sealed and held in a space surrounded by a sealing material described later. The liquid crystal 50 assumes a predetermined alignment state by the alignment film in a state where no electric field is applied from the pixel electrode 9a. The liquid crystal 50 is composed of, for example, one or a mixture of several types of nematic liquid crystals. Note that the sealing material is an adhesive made of a photocurable resin or a thermosetting resin for bonding the TFT array substrate 10 and the opposing substrate 20 around the periphery thereof, and the distance between the two substrates is a predetermined value. The gap material is mixed with a spacer such as glass fiber or glass beads for the purpose.

In the liquid crystal panel 100 thus configured, the TFT array substrate 10 is configured as shown in FIG. That is, the data line driving circuit 101 and the scanning line driving circuit 104 are also formed on the TFT array substrate 10, and the data line driving circuit 101 and the scanning line driving circuit 104 are provided with a plurality of data lines 6a and scanning lines 3 respectively.
a and the capacitor line 3b. The TFT array substrate 10 includes a sampling circuit 105.
The sampling circuit 105 is supplied with an image signal converted from a control circuit (not shown) into a format that can be immediately displayed via an image signal line 106. Therefore, in accordance with the scanning line driving circuit 104 sequentially sending the scanning signals to the scanning lines 3a in a pulsed manner, the data line driving circuit 1
01 drives the sampling circuit 105 and sends a signal voltage corresponding to the image signal to the data line 6a.

As a result, in each pixel, in FIGS. 1, 3 and 4, the pixel signals S1, S2,... Sn are held for a certain period between the pixel electrode 9a and the counter electrode 21 of the counter substrate 20. In the liquid crystal 50, the orientation and order of the molecular assembly change depending on the voltage level applied to each pixel. Therefore, for example, light incident from the side of the counter substrate 20 (incident light L
In 1), only the light incident on the liquid crystal portion that can pass through is emitted from the TFT array substrate 10 side, so that a predetermined display can be performed.

(Configuration of Light-Shielding Film) In the liquid crystal panel 100 thus configured, as shown in FIG. 2, a data line 6a, a scanning line 3a and a capacitor line 3b pass through a boundary region between adjacent pixel electrodes 9a. However, if light leaks through these wirings or through a gap between these wirings and the pixel electrode 9a, the display quality will be degraded.
Therefore, in the present embodiment, the light-shielding film 11a is formed along the vertical and horizontal boundary regions of each pixel electrode 9a. This light shielding film 11
a is a plane in which the TFT 30 is formed including the channel forming region of the semiconductor layer 1 a, the data line 6 a, and the scanning line 3.
a and the capacitance line 3b are formed at positions overlapping with each other when viewed from the TFT array substrate 10 side.

In forming the light-shielding film 11a, as shown in FIGS. 3 and 4, the TFT 30, the light-shielding film 11a and the pixel electrode 9a are provided between the second interlayer insulating film 7a (the lower interlayer insulating film). ) And the third interlayer insulating film 7b (upper-layer interlayer insulating film).
It is formed on the array substrate 10. That is, the TFT 30
The data line 6a which is the source electrode of the second
And a light shielding film 11a is formed on the second interlayer insulating film 7a. The light-shielding film 11a is covered with a third interlayer insulating film 7b, and the pixel electrode 9 is formed on the third interlayer insulating film 7b.
a is formed.

In the liquid crystal panel 100 configured as described above, when light (incident light L1) enters from the side of the counter substrate 20, the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a. Therefore, there is no leakage from the TFT array substrate 10 side through the boundary region of each pixel electrode 9a. Therefore, since light does not leak from the boundary region of the pixel electrode 9a, high-quality display can be performed.

Here, of the light (incident light L1) from the opposite substrate 20 side, the light applied to the boundary region of each pixel electrode 9a is formed on both sides of the upper surface of the light shielding film 11a. Reflected light L1 ′ toward the pixel electrode 9a
Reflecting surface 111 made of an inclined surface or a curved surface for incidence
Are formed. That is, since the light-shielding film 11a has a continuously decreasing thickness from the center in the width direction to both sides, the reflection surfaces 111 are formed at both ends of the upper surface of the light-shielding surface 11a. For this reason, even if the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a, the light applied to the reflection surface 111 of the light shielding film 11a is reflected and incident toward the pixel electrode 9a. Therefore, the light shielding film 11
The light reflected by the reflection surface 111a is emitted toward the TFT array substrate 10 and contributes to display. Further, the light reflected by the reflection surface 111 of the light-shielding film 11a toward the counter substrate 20 is reflected by the counter substrate-side light-shielding film 23 and enters the pixel electrode 9a as reflected light LL1 ', which contributes to display. become. Therefore, light can be prevented from leaking from the boundary region of the pixel electrode 9a, and the utilization efficiency of incident light can be increased, so that bright display can be performed. Further, in order to more reliably prevent light from leaking from the boundary region of the pixel electrode 9a, the light shielding film 11 is used.
a may be formed wide. Even in this case, since the utilization efficiency of the incident light does not decrease, a bright display can be performed. Therefore, high-quality and bright display can be performed.

(Method of Manufacturing Liquid Crystal Panel) A method of manufacturing the TFT array substrate 10 in the liquid crystal panel 100 thus configured will be described with reference to FIGS.

FIG. 6 to FIG. 10 show the T
FIG. 7 is a process cross-sectional view illustrating the method of manufacturing the FT array substrate 10. 6 to 10 show cross sections at a position corresponding to the line AA ′ in FIG. 2 and a cross section of a half of the cross section at a position corresponding to the line BB ′ in FIG. It is shown.

As shown in FIG. 6A, a TFT array substrate 10 such as a quartz substrate or hard glass is prepared. TFT
The array substrate 10 is annealed in an inert gas atmosphere such as N ₂ (nitrogen) and at a high temperature of about 900 ° C. to about 1300 ° C., and is pre-processed to reduce distortion in a high-temperature process performed later. Is preferred. That is, TF is set in advance according to the maximum temperature in the manufacturing process.
The T array substrate 10 is heat-treated at the same temperature or higher.

Next, on the TFT array substrate 10, for example, TEOS (tetra-
Ethyl ortho silicate gas, TEB
NSG using Ethyl (Portrait) gas, TMOP (Tetra methyl oxy phosphate) gas, etc.
(Non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG
A silicate glass film such as (boron phosphorus silicate glass), a base protective film 12 made of a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the underlayer protective film 12 is
For example, the range is about 5000 Å to about 20,000 Å.

Next, a temperature of about 450 ° C.
Flow rate of about 400 cc / min to about 600 cc / mi in a relatively low temperature environment of about 550 ° C., preferably about 500 ° C.
n reduced pressure CV using monosilane gas, disilane gas, etc.
D (for example, CVD at a pressure of about 20 to 40 Pa)
An amorphous silicon film is formed. Then, in a nitrogen atmosphere at about 600 ° C. to about 700 ° C. for about 1 hour to about 10 hours.
The polysilicon film 1 is solid-phase grown to a thickness of about 500 angstroms to about 2000 angstroms, preferably about 1000 angstroms, by performing an annealing process for about 4 hours to about 6 hours. Let it.

At this time, the pixel switching TFT 30
May be doped with a group V element such as Sb (antimony), As (arsenic), or P (phosphorus) by ion implantation or the like. The pixel switching TFT 30
Is a p-channel type, B (boron), Ga
A dopant of a group III element such as (gallium) or In (indium) may be slightly doped by ion implantation or the like. In addition, without passing through the amorphous silicon film,
The polysilicon film 1 may be directly formed by a VD method or the like. Alternatively, the polysilicon film 1 may be formed by implanting silicon ions into a polysilicon layer deposited by a low-pressure CVD method or the like to make the polysilicon film amorphous once (amorphization), and then recrystallize by annealing or the like.

Next, as shown in FIG. 6B, a semiconductor layer 1a having the pattern shown in FIG. 2 is formed by a photolithography process, an etching process, and the like. That is, the region where the capacitance line 3b is formed below the data line 6a and the scanning line 3
The area where the capacitance line 3b is formed along
First, a first electrode (semiconductor layer) 1f extending from the semiconductor layer 1a constituting 0 is formed.

Next, as shown in FIG.
0 together with the semiconductor layer 1a constituting the first electrode (semiconductor layer)
By thermally oxidizing 1f at a temperature of about 900 ° C. to about 1300 ° C., preferably about 1000 ° C., about 30 ° C.
A relatively thin thermal oxide film of 0 Å is formed, and a high-temperature silicon oxide film (HTO film) or a silicon nitride film is deposited by a low pressure CVD method or the like to a relatively thin thickness of about 500 Å to have a multilayer structure. A gate insulating film 2 and a dielectric film for forming a storage capacitor are formed. As a result, the first electrode 1f (semiconductor layer 1a) has a thickness of about 300 Å to about 1500 Å, preferably about 350 Å.
The thickness is about 500 angstroms, and the thickness of the dielectric film (gate insulating film 2) for forming the capacitor is about 200 angstroms to about 1500 angstroms, preferably about 300 angstroms to about 1000 angstroms. . By shortening the high-temperature thermal oxidation time in this way, it is possible to prevent warpage due to heat when using a large wafer of about 8 inches. However, the gate insulating film 2 having a single-layer structure may be formed only by thermal oxidation of the polysilicon layer 1. In this step, for example, the semiconductor layer portion serving as the first electrode
P ions are doped at a dose of about 3 × 10 ¹² / cm ² to lower the resistance.

Next, as shown in FIG.
After the polysilicon layer 3 is deposited by the D method or the like, phosphorus (P) is thermally diffused to make the polysilicon film 3 conductive. Alternatively, a doped silicon film in which P ions are introduced simultaneously with the formation of the polysilicon film 3 may be used.

Next, as shown in FIG. 7A, a scanning line 3a (gate electrode) and a capacitor line 3b having the pattern shown in FIG. 2 are formed by a photolithography process using a resist mask, an etching process and the like. I do. The layer thickness of these capacitance lines 3b and scanning lines 3a is, for example, about 3500 angstroms.

Next, as shown in FIG. 7B, the TFT 30 shown in FIG. 3 is replaced with an n-channel type TF having an LDD structure.
In the case of T, in order to first form the low concentration source region 1b and the low concentration drain region 1c in the semiconductor layer 1a,
Using the scanning line 3a (gate electrode) as a diffusion mask, a dopant 200 of a group V element such as P is used at a low concentration (for example, P
The ions are doped (at a dose of 1 × 10 ¹³ / cm ^{2 to} 3 × 10 ¹³ / cm ² ). As a result, the semiconductor layer 1a below the scanning line 3a (gate electrode) is
a '. The resistance of the capacitance line 3b and the scanning line 3a is also reduced by the impurity doping.

Subsequently, as shown in FIG.
In order to form 30 high-concentration source regions 1d and high-concentration drain regions 1e, a resist mask 202 is formed using a mask wider than the scanning lines 3a (gate electrodes).
After being formed on the (gate electrode), a dopant 201 of a group V element such as P is also doped at a high concentration (for example, P ions at a dose of 1 to 3 × 10 ¹⁵ / cm ² ).
In the case where the TFT 30 is of a p-channel type, in order to form a low-concentration source region 1b and a low-concentration drain region 1c and a high-concentration source region 1d and a high-concentration drain region 1e in the semiconductor layer 1a, a group III such as B is used. Doping using elemental dopant. Note that a TFT having an offset structure may be used without performing low-concentration doping, and a self-aligned TFT may be formed by an ion implantation technique using P ions, B ions, or the like using the scanning line 3a (gate electrode) as a mask. good. The resistance of the capacitance line 3b and the scanning line 3a is further reduced by the doping of the impurity.

Simultaneously with these steps, peripheral circuits such as a data line driving circuit 101 and a scanning line driving circuit 104 having a complementary structure composed of an n-channel TFT and a p-channel TFT (see FIG. 5). Is formed in a peripheral portion on the TFT array substrate 10. As described above, since the pixel switching TFT 30 is a polysilicon TFT in the present embodiment, peripheral circuits such as the data line driving circuit 101 and the scanning line driving circuit 104 are formed in substantially the same process when the pixel switching TFT 30 is formed. It is advantageous in manufacturing.

Next, as shown in FIG.
0 to cover the scanning line 3a (gate electrode), the capacitance line 3b, and the scanning line 3a, for example, normal pressure or reduced pressure CV.
NSG, PSG, BS using D method or TEOS gas
A first interlayer insulating film 4 made of a silicate glass film such as G or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the first interlayer insulating film 4 is preferably about 5,000 Å to about 15,000 Å.

Next, an annealing process at about 1000 ° C. is performed for about 20 minutes to activate the high-concentration source region 1 d and the high-concentration drain region 1 e, and then, as shown in FIG. The contact hole 5 for the (source electrode) is formed by dry etching such as reactive edging or reactive ion beam edging, or by wet etching.

Next, as shown in FIG. 8A, a metal film 6 such as a low-resistance metal such as A1 or a metal silicide is formed on the first interlayer insulating layer 4 by sputtering or the like to a thickness of about 1,000 angstroms. ~ 5000 angstroms thick,
Preferably, it deposits at about 3000 angstroms.

Next, as shown in FIG. 8B, the data lines 6 are formed by a photolithography process, an etching process, and the like.
a (source electrode) is formed.

Next, as shown in FIG. 8C, the NSG, PS, or the like is applied to cover the data line 6a (source electrode) using, for example, normal pressure or low pressure CVD, TEOS gas, or the like.
A second interlayer insulating film 7a (lower interlayer insulating film) made of a silicate glass film such as G, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The layer thickness of the second interlayer insulating film 7a is about 5,000 Å to about 150 Å.
00 Å is preferred.

Next, as shown in FIG. 9A, titanium, chromium, tungsten, tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon is formed on the third interlayer insulating film 7a. The thin film 11 made of a material having a light-shielding property such as
About 1000 angstroms to about 500
A layer thickness of about 0 angstroms, preferably about 2000
Angstrom layer thickness.

Next, as shown in FIG.
A resist mask 203 corresponding to the pattern of the light shielding film 11a (see FIG. 2) is formed thereon by photolithography. Here, the resist mask 203 is a light shielding film 11a.
Is formed so as to cover a region substantially overlapping with a region to be formed,
The side edge of the resist mask 203 is located in a region where the reflection surface 111 (see FIG. 4) of the light shielding film 11a is to be formed.

Next, dry etching is performed on the thin film 11 through a resist mask 203 using an etching gas containing oxygen. As described above, when the thin film 11 is etched using an etching gas containing oxygen, FIG.
In (b), the resist mask 203 is also etched from the top and side surfaces, as indicated by the dash-dot line in the resist mask 203 being etched (ashed) by oxygen in the etching gas. As a result, the thin film 1
1, the portion corresponding to the side edge of the resist mask 203 is more etched.

As a result, as shown in FIG. 9C, in the light-shielding film 11a patterned and formed from the thin film 11, the film thickness changes continuously at the portion located at the side edge of the resist mask 203. . That is, the light shielding film 11a
Has a continuously decreasing thickness from the center in the width direction toward both sides. Therefore, the reflection surface 111 formed of an inclined surface or a curved surface is formed at both ends of the upper surface of the light shielding film 11a.

As described above, the light-shielding film 11a having the reflection surface 111 can be easily formed only by adjusting the kind of the etching gas when the thin film 11 is patterned to form the light-shielding film 11a.

Next, as shown in FIG. 10A, an NSG film is formed on the light-shielding film 11a and the second interlayer insulating film 7a by using, for example, a normal pressure or low pressure CVD method or a TEOS gas.
Silicate glass films such as PSG, BSG, and BPSG;
A third interlayer insulating film 7b (upper interlayer insulating film) made of a silicon nitride film, a silicon oxide film, or the like is formed. The layer thickness of the third interlayer insulating film 7b is about 5,000 angstroms to about 1.
5000 Å is preferred.

Next, as shown in FIG.
At 30, the pixel electrode 9a and the high concentration drain region 1e
Are formed by dry etching such as reactive edging and reactive ion beam edging.

Next, as shown in FIG. 10C, a transparent conductive thin film 9 such as an ITO film is formed on the third interlayer insulating film 7b by sputtering or the like to a thickness of about 500 Å.
Deposit to a thickness of about 2000 angstroms.

Next, the transparent conductive thin film 9 is patterned by a photolithography process, an etching process, and the like.
As shown in FIG. 10D, a pixel electrode 9a is formed.
Subsequently, a coating liquid for a polyimide-based alignment film is applied on the pixel electrode 9a, and rubbing is performed in a predetermined direction so as to have a predetermined pretilt angle, thereby forming an alignment film.

(Manufacturing Method of Opposing Substrate) On the other hand, as for the opposing substrate 20 shown in FIGS. 3 and 4, a glass substrate or the like is first prepared, and the opposing substrate-side light-shielding film 23 and the display area and the non-display area are separated. Peripheral parting 53 for separation (FIG. 28
See Is formed through a photolithography process and an edging process after sputtering metal chromium, for example. The opposing substrate-side light-shielding film 23 and the periphery 53 of the display screen (see FIG. 28) are made of a metal material such as Cr, Ni, or Al, or a material such as resin black in which carbon or Ti is dispersed in a photoresist. May form.

Next, an opposing electrode 21 is formed by depositing a transparent conductive thin film such as ITO on the entire surface of the opposing substrate 20 to a thickness of about 500 angstroms to about 2000 angstroms. Further, an alignment film is formed by applying a coating liquid of a polyimide-based alignment film to the entire surface of the counter electrode 21 and then performing a rubbing treatment in a predetermined direction so as to have a predetermined pretilt angle.

(Method of Enclosing Liquid Crystal) As shown in FIGS. 3 and 4, the TFT array substrate 10 and the counter substrate 20 manufactured as described above are sealed with a sealing material (not shown) so that the alignment film faces each other. ), The liquid crystal formed by mixing a plurality of types of nematic liquid crystals is sucked into the space between the two substrates by vacuum suction or the like, and a layer of the liquid crystal 50 having a predetermined thickness is formed.

[Second Embodiment] FIG. 11 is a cross-sectional view of the liquid crystal panel of this embodiment at a position corresponding to line BB 'in FIG. In this embodiment and any of the embodiments described later, the basic configuration is common to the liquid crystal panel according to the first embodiment, and the planar structure and the cross-sectional structure at a position corresponding to line BB ′ in FIG. 2 and 3 used in the description of the first embodiment. Therefore, corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

As shown in FIGS. 3 and 11, also in the liquid crystal panel 100 of this example, a light-shielding film 11a is formed in the boundary region between the adjacent pixel electrodes 9a, as in the first embodiment. In forming the light shielding film 11a, a TFT
The light-shielding film 11, the light-shielding film 11a, and the pixel electrode 9a are arranged in this order with a second interlayer insulating film 7a (lower interlayer insulating film) and a third interlayer insulating film 7b (upper interlayer insulating film) interposed therebetween. It is formed on a substrate 10. That is, the data line 6a, which is the source electrode of the TFT 30, is connected to the second
Covered with an interlayer insulating film 7a, a light shielding film 11a is formed on the second interlayer insulating film 7a. The light-shielding film 11a is covered with a third interlayer insulating film 7b.
The pixel electrode 9a is formed thereon. Also in the liquid crystal panel 100 configured as described above, when light (incident light L1) is incident from the counter substrate 20 side, the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a. There is no leakage from the TFT array substrate 10 side through the boundary region of the pixel electrode 9a. Therefore, high-quality display can be performed.

Here, of the light (incident light L1) from the opposite substrate 20 side, the light applied to the boundary region of each pixel electrode 9a is formed on both sides of the upper surface of the light shielding film 11a. Reflected light L1 ′ toward the pixel electrode 9a
Reflecting surface 111 made of an inclined surface or a curved surface for incidence
Are formed. That is, the light-shielding film 11a has
Thick portions and thin portions are alternately formed in the width direction, and a plurality of irregularities are formed on the upper surface of the light shielding surface 11a. For this reason, even if the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a, the light applied to each of the reflection surfaces 111 of the light shielding film 11a is reflected and incident toward the pixel electrode 9a. . Also, the reflection surface 11 of the light shielding film 11a
1 is reflected by the opposing substrate side light-shielding film 23, and is reflected as the reflected light LL1 'by the pixel electrode 9
Since it is incident on a, it contributes to display. Therefore, the light reflected by the reflection surface 111 of the light shielding film 11a is TF
The light is emitted toward the T array substrate 10 and contributes to display. Accordingly, it is possible to prevent light from leaking from the boundary region of the pixel electrode 9a and to use the incident light with high efficiency, so that a bright display can be performed.

The T of the liquid crystal panel 100 thus configured is
The method of manufacturing FT array substrate 10 substantially includes the steps described with reference to FIGS. 6, 7 and 8 and the steps described with reference to FIG. 10 among the manufacturing steps described in the first embodiment. And only the steps described with reference to FIG. 9 are changed. Therefore, referring to FIG.
In the manufacturing process of the FT array substrate 10, only characteristic portions will be described, and other description will be omitted.

As shown in FIG. 12A, after forming a second interlayer insulating film 7a (lower interlayer insulating film), titanium, chromium, tungsten, tantalum, molybdenum is formed on the second interlayer insulating film 7a. A thin film 11 made of a material having a light-shielding property such as palladium, aluminum, an alloy of these metals, or doped silicon is formed by sputtering or CVD to a thickness of about 1,000 angstroms to about 5000 angstroms.
It is formed with a layer thickness of about Angstroms, preferably about 2,000 Angstroms.

Next, as shown in FIG.
A resist mask 204 is formed on the substrate 1 by photolithography in a region substantially overlapping with a region where the light-shielding film 11a is to be formed. Here, the resist mask 204 is used as the light shielding film 11a.
Resist masks 204a, 204b, 204c, 204d, 204 arranged in parallel in the width direction of the region to be formed
e, and the resist masks 204a, 20
The side edges of 4b, 204c, 204d, and 204e are located in regions where the respective reflection surfaces 111 (see FIG. 11) of the light shielding film 11a are to be formed.

Next, the resist mask 204 (resist masks 204a, 204b, 204c, 204d, 204
Through e), the thin film 11 is subjected to dry etching using an etching gas containing oxygen. As described above, when the thin film 11 is etched using an etching gas containing oxygen, the resist masks 204a, 204b, 204
c, 204d and 204e are also etched from the top and side surfaces. Therefore, in the thin film 11, a portion corresponding to the side edge of each of the resist masks 204a, 204b, 204c, 204d, and 204e is etched more.

As a result, as shown in FIG. 12C, the resist masks 204a, 204b, 204c,
The film thickness changes continuously at portions corresponding to the side edges of 04d and 204e. That is, thick portions and thin portions are alternately formed in the light-shielding film 11a in the width direction. As a result, a plurality of irregularities are formed on the upper surface of the light-shielding surface 11a, and each of the inclined surface or the curved surface of each irregularity becomes the reflection surface 111.

In the subsequent steps, a third interlayer insulating film 7b (upper interlayer insulating film) and a third interlayer insulating film 7b are formed on the light shielding film 11a and the second interlayer insulating film 7a, as described with reference to FIG. The pixel electrodes 9a are sequentially formed.

[Embodiment 3] FIG. 13 is a cross-sectional view of a liquid crystal panel of this embodiment at a position corresponding to line BB 'in FIG.

In the liquid crystal panel 100 of this embodiment, as shown in FIGS. 3 and 13, a light-shielding film 11a is formed in a boundary region between adjacent pixel electrodes 9a. In forming the light-shielding film 11a, the TFT 30, the light-shielding film 11a, and the pixel electrode 9a are located between the second interlayer insulating film 7a and the pixel electrode 9a.
The lower interlayer insulating film and the third interlayer insulating film 7b (upper interlayer insulating film) are formed on the TFT array substrate 10 in this order. The liquid crystal panel 1 thus configured
Even when the light is incident from the opposite substrate 20 side (incident light L1), the light applied to the boundary area of each pixel electrode 9a is reflected by the light shielding film 11a. It does not leak from the TFT array substrate 10 side through. Therefore, since light does not leak from the boundary region of the pixel electrode 9a, high-quality display can be performed.

Here, of the light (incident light L1) from the side of the counter substrate 20, the light applied to the boundary region of each pixel electrode 9a is formed on both sides of the upper surface of the light shielding film 11a. Reflected light L1 ′ toward the pixel electrode 9a
Reflecting surface 111 made of an inclined surface or a curved surface for incidence
Are formed. That is, the light-shielding film 11a has substantially the same layer thickness as a whole, but both end portions in the width direction of the light-shielding film 11a are formed on the inclined surface 711 (or on the curved surface) of the second interlayer insulating film 7a. Accordingly, a reflection surface 111 formed of an inclined surface or a curved surface is formed at both ends of the upper surface of the light shielding surface 11a.

In the liquid crystal panel 100 configured as described above, even though the light applied to the boundary area between the pixel electrodes 9a is reflected by the light shielding film 11a, the light applied to the reflection surface 111 of the light shielding film 11a is The light is reflected and incident toward 9a.
The light reflected on the reflection surface 111 of the light shielding film 11a toward the counter substrate 20 is reflected on the counter substrate side light shielding film 23,
Since the reflected light LL1 'is incident on the pixel electrode 9a, it contributes to display. Therefore, the light reflected on the reflection surface 111 of the light shielding film 11a is emitted toward the TFT array substrate 10 and contributes to display. Therefore, light can be prevented from leaking from the boundary region of the pixel electrode 9a, and the efficiency of using the incident light is high, so that a bright display can be performed.

The T of the liquid crystal panel 100 thus configured is
The method of manufacturing FT array substrate 10 substantially includes the steps described with reference to FIGS. 6, 7 and 8 and the steps described with reference to FIG. 10 among the manufacturing steps described in the first embodiment. And only the steps described with reference to FIG. 9 are changed. Therefore, referring to FIG.
In the manufacturing process of the FT array substrate 10, only characteristic portions will be described, and other description will be omitted.

As shown in FIG. 14A, after the second interlayer insulating film 7a (lower interlayer insulating film) is formed to be slightly thicker,
A resist mask 205 is formed on the upper surface of the second interlayer insulating film 7a in a region substantially overlapping with a region where the light-shielding film 11a is to be formed. Here, the side edge of the resist mask 205 is positioned in a region where the reflection surface 111 (see FIG. 13) of the light shielding film 11a is to be formed.

Next, dry etching is performed on the upper surface of the second interlayer insulating film 7a with an etching gas containing oxygen through the resist mask 205. As described above, when the upper surface of the second interlayer insulating film 7a is etched using the etching gas containing oxygen, the resist mask 205 is also etched from the upper surface and the side surfaces. Therefore, the portion of the upper surface of the second interlayer insulating film 7a corresponding to the side edge of the resist mask 205 is more etched. Therefore, a region corresponding to the side edge of the resist mask 205 becomes the inclined surface 71 on the upper surface of the second interlayer insulating film 7a.

Next, as shown in FIG. 14C, on the second interlayer insulating film 7a, titanium, chromium, tungsten,
A thin film 11 made of a light-shielding material such as tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon is formed by sputtering or CV.
About 1000 Angstroms to about 50 by D method
A layer thickness on the order of 00 angstroms, preferably about 200
It is formed with a layer thickness of 0 Å.

Next, as shown in FIG.
1 is patterned by photolithography to form a light-shielding film 11a. As a result, on the upper surface of the light-shielding film 11a, a reflection surface 111 formed of an inclined surface or a curved surface is formed in a region corresponding to the inclined surface 71 of the second interlayer insulating film 7a.

In the subsequent steps, as described with reference to FIG. 10, a third interlayer insulating film 7b (upper interlayer insulating film), a light-shielding film 11a and a second interlayer insulating film 7a, The pixel electrodes 9a are sequentially formed.

[Embodiment 4] FIG. 15 is a cross-sectional view of a liquid crystal panel of this embodiment at a position corresponding to line BB 'in FIG. The liquid crystal panel of the present embodiment is of a type in which light is incident from the TFT array substrate 10, but has a basic configuration common to the liquid crystal panel according to the first embodiment, and has a planar structure and a B- The cross-sectional structure at the position corresponding to the line B ′ is represented as shown in FIGS. 2 and 3 used in the description of the first embodiment. Therefore, corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

In the liquid crystal panel 100 of this embodiment, as shown in FIGS. 3 and 15, a light-shielding film 11a is formed in a boundary region between adjacent pixel electrodes 9a. Also, the light shielding film 11a
In plan view, along the boundary area of each pixel electrode 9a,
The formation region of the TFT 30 including the channel formation region of the semiconductor layer 1a, the data line 6a, the scanning line 3a, and the capacitance line 3b
Are formed at overlapping positions when viewed from the TFT array substrate side.

In forming the light shielding film 11a, the TFT 30, the light shielding film 11a and the pixel electrode 9a are
They are formed on the TFT array substrate 10 in this order with a second interlayer insulating film 7a (lower interlayer insulating film) and a third interlayer insulating film 7b (upper interlayer insulating film) interposed therebetween.

In the liquid crystal panel 100 thus configured, light (incident light L2) is emitted from the TFT array substrate 10 side.
Is incident on the boundary region between the pixel electrodes 9a, the light is reflected by the light shielding film 11a.
Does not leak from the side of the counter substrate 20 through the boundary region. Therefore, since light does not leak from the boundary region of the pixel electrode 9a, high-quality display can be performed.

Here, a TFT is provided on the lower surface of the light shielding film 11a.
Among the light (incident light L2) from the side of the array substrate 10, the light applied to the boundary region of each pixel electrode 9a is reflected as reflected light L2 'toward the pixel electrodes 9a formed on both sides thereof. A reflecting surface 111 made of an inclined surface or a curved surface for incidence is formed. That is, the light-shielding film 11a has substantially the same layer thickness as a whole, but both end portions in the width direction of the light-shielding film 11a are
By being formed on the surface 11 (or on the curved surface), a reflection surface 111 formed of an inclined surface or a curved surface is formed at both lower end portions of the light shielding surface 11a.

In the liquid crystal panel 100 configured as described above, even though the light applied to the boundary area of each pixel electrode 9a is reflected by the light shielding film 11a, the light applied to the reflection surface 111 of the light shielding film 11a is not reflected by the pixel electrode 9a. The light is reflected and incident toward 9a.
Therefore, the light reflected by the light-shielding film 11a also
And contributes to the display. Therefore,
Since light can be prevented from leaking from the boundary region of the pixel electrode 9a and the utilization efficiency of incident light is high, bright display can be performed.

The T of the liquid crystal panel 100 thus configured is
The method of manufacturing FT array substrate 10 substantially includes the steps described with reference to FIGS. 6, 7 and 8 and the steps described with reference to FIG. 10 among the manufacturing steps described in the first embodiment. And only the steps described with reference to FIG. 9 are changed. Therefore, referring to FIG.
In the manufacturing process of the FT array substrate 10, only characteristic portions will be described, and other description will be omitted.

As shown in FIG. 16A, after the second interlayer insulating film 7a (lower interlayer insulating film) is formed to be slightly thicker,
A resist mask 2 having a window opened in a region of the upper surface of the second interlayer insulating film 7a substantially overlapping with a region where the light-shielding film 11a is to be formed.
06 is formed. Here, as for the resist mask 206, the inner edge of the window opening portion is positioned in a region where the reflection surface 111 (see FIG. 15) of the light shielding film 11a is to be formed.

Next, dry etching is performed on the upper surface of the second interlayer insulating film 7a through the resist mask 206 using an etching gas containing oxygen. As described above, when the thin film 11 is etched using the etching gas containing oxygen, the resist mask 206 is also etched from the upper surface and the side surfaces. Therefore, as shown in FIG.
In the upper surface of the second interlayer insulating film 7a, the resist mask 20
The portion corresponding to the side edge of No. 6 is etched more.
As a result, the light shielding film 11 is formed on the upper surface of the second interlayer insulating film 7a.
The region where the reflection surface 111 of “a” is to be formed is the inclined surface 71.

Next, as shown in FIG. 16C, on the second interlayer insulating film 7a, titanium, chromium, tungsten,
A thin film 11 made of a light-shielding material such as tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon is formed by sputtering or CV.
About 1000 Angstroms to about 50 by D method
A layer thickness on the order of 00 angstroms, preferably about 200
It is formed with a layer thickness of 0 Å.

Next, as shown in FIG.
1 is patterned using photolithography technology on
The light shielding film 11a is formed. As a result, on the lower surface of the light-shielding film 11a, a region corresponding to the inclined surface 71 of the second interlayer insulating film 7a is formed as a reflective surface 111 formed of an inclined surface or a curved surface.

In the subsequent steps, a third interlayer insulating film 7b (upper interlayer insulating film) and a third interlayer insulating film 7b are formed on the light shielding film 11a and the second interlayer insulating film 7a, as described with reference to FIG. The pixel electrodes 9a are sequentially formed.

[Embodiment 5] FIG. 17 is a cross-sectional view of the liquid crystal panel of this embodiment at a position corresponding to line BB 'in FIG. The liquid crystal panel of this embodiment can cope with both the case where light enters from the counter substrate 20 and the case where light enters from the TFT array substrate 10. 2 and the cross-sectional structure at a position corresponding to the line BB ′ in FIG. 2 is shown in FIGS. 2 and 3 used in the description of the first embodiment. Is done. Therefore, corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

In the liquid crystal panel 100 of this embodiment, as shown in FIGS. 3 and 17, a light-shielding film 11a is formed in a boundary region between adjacent pixel electrodes 9a. In forming the light-shielding film 11a, the TFT 30, the light-shielding film 11a, and the pixel electrode 9a are provided between the TFT 30, the light-shielding film 11a, and the second interlayer insulating film 7a.
The lower interlayer insulating film and the third interlayer insulating film 7b (upper interlayer insulating film) are formed on the TFT array substrate 10 in this order. The liquid crystal panel 1 configured as described above
In the case of 00, when light (incident light L1) enters from the side of the counter substrate 20, the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a. It does not leak from the TFT array substrate 10 side through. Therefore, since light does not leak from the boundary region of the pixel electrode 9a, high-quality display can be performed.

Here, of the light (incident light L1) from the opposite substrate 20 side, the light applied to the boundary region of each pixel electrode 9a is formed on both sides of the upper surface of the light shielding film 11a. Reflected light L1 ′ toward the pixel electrode 9a
Reflecting surface 111 made of an inclined surface or a curved surface for incidence
Are formed. That is, although the light-shielding film 11a has a constant layer thickness as a whole, the unevenness is repeated in the width direction on the upper surface of the second interlayer insulating film 7a.
A plurality of irregularities are formed on the upper surface of the light shielding film 11a. Therefore, the large number of inclined surfaces 71 (or curved surfaces) formed by the unevenness of the second interlayer insulating film 7a are not changed to the light shielding film 1 as they are.
Reflected on the upper surface of 1a, a plurality of reflection surfaces 111 are formed. Therefore, even if the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a, the light applied to each reflection surface 111 of the light shielding film 11a is reflected and incident toward the pixel electrode 9a. Therefore, the light reflected by the light shielding film 11a is also emitted toward the TFT array substrate 10 and contributes to display. Therefore, light can be prevented from leaking from the boundary region of the pixel electrode 9a, and the efficiency of using incident light is high, so that a bright display can be performed.

The light-shielding film 11a thus formed is the same as that of FIG.
As shown in FIG. 8, it can be considered that a plurality of irregularities are formed on the lower surface. That is, light (incident light L) from the side of the TFT array substrate 10 is provided on the lower surface of the light shielding film 11a.
In 2), the light irradiated to the boundary region of each pixel electrode 9a is reflected as a reflected light L2 'toward the pixel electrodes 9a formed on both sides of the light, and the light is reflected from the inclined surface or curved surface. It can be said that a plurality of 111s are formed in the width direction. Therefore, even if the light applied to the boundary region of each pixel electrode 9a is reflected by the light shielding film 11a, the light applied to the reflection surface 111 of the light shielding film 11a is reflected and incident toward the pixel electrode 9a. Therefore, the light reflected by the light-shielding film 11a is also emitted toward the counter substrate 20 and contributes to display. Therefore, it is possible to prevent light from leaking from the boundary region of the pixel electrode 9a and to use the incident light with high efficiency, so that a bright display can be performed.

The T of the liquid crystal panel 100 thus configured is
The method of manufacturing FT array substrate 10 substantially includes the steps described with reference to FIGS. 6, 7 and 8 and the steps described with reference to FIG. 10 among the manufacturing steps described in the first embodiment. And only the steps described with reference to FIG. 9 are changed. Therefore, referring to FIG.
In the manufacturing process of the FT array substrate 10, only characteristic portions will be described, and other description will be omitted.

As shown in FIG. 19A, after the second interlayer insulating film 7a (lower interlayer insulating film) is formed to be slightly thicker,
A resist mask 207 is formed on the upper surface of the second interlayer insulating film 7a in a region substantially overlapping the region where the light-shielding film 11a is to be formed. Here, the resist mask 207 is formed as a plurality of resist masks 207a, 207b, and 207c arranged in parallel in the width direction of the region where the light-shielding film 11a is to be formed. The reflection surface 111 (see FIGS. 17 and 18) is located in a region where the reflection surface 111 is to be formed.

Next, dry etching using an etching gas containing oxygen is performed on the upper surface of the second interlayer insulating film 7a through the resist mask 207 (resist masks 207a, 207b, 207c). As described above, when the upper surface of the second interlayer insulating film 7a is etched using the etching gas containing oxygen, the resist masks 207a, 207
b and 207c are also etched from the top and side surfaces.
Therefore, as shown in FIG. 19B, the second interlayer insulating film 7
A portion of the upper surface a corresponding to the side edge of the resist mask 205 is etched more. As a result, in the second interlayer insulating film 7a, thick portions and thin portions are alternately formed in the width direction. As a result, a plurality of irregularities are formed on the upper surface of the second interlayer insulating film 7a, and side surfaces of the irregularities become the inclined surfaces 71 (or curved surfaces).

Next, as shown in FIG. 19C, on the second interlayer insulating film 7a, titanium, chromium, tungsten,
A thin film 11 made of a light-shielding material such as tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon is formed by sputtering or CV.
About 1000 Angstroms to about 50 by D method
A layer thickness on the order of 00 angstroms, preferably about 200
It is formed with a layer thickness of 0 Å.

Next, as shown in FIG.
1 is patterned using photolithography technology on
The light shielding film 11a is formed. As a result, on the upper surface (or lower surface) of the light-shielding film 11a, a region corresponding to the inclined surface 71 of the second interlayer insulating film 7a is formed as the reflecting surface 111 formed of an inclined surface or a curved surface.

In the subsequent steps, a third interlayer insulating film 7b (upper interlayer insulating film) and a third interlayer insulating film 7b are formed on the light shielding film 11a and the second interlayer insulating film 7a, as described with reference to FIG. The pixel electrodes 9a are sequentially formed.

[Embodiment 6] In each of Embodiments 1 to 5, a light-shielding film which reflects light incident on the boundary region between adjacent pixel electrodes 9a toward the pixel electrode 9a and makes the light incident on the pixel electrode 9a is formed by a TFT.
Although this example is formed on the array substrate 10, the adjacent pixel electrode 9 a is formed on the counter substrate 20 side as in this embodiment.
Light applied to a region corresponding to the boundary region of the pixel electrode 9
The function of reflecting and entering toward a
May be provided.

FIG. 20 is a cross-sectional view of the liquid crystal panel of this embodiment shown in FIG.
It is sectional drawing in the position corresponding to the -B 'line. The liquid crystal panel of the present embodiment is of a type in which light (incident light L1) is incident from the counter substrate 20. The basic configuration of the TFT array substrate 10 is the same as that of the liquid crystal panel according to the first embodiment. Have in common. Therefore, also in the liquid crystal panel of the present embodiment, the cross-sectional structure at a position corresponding to the line BB 'in FIG. 2 is expressed as shown in FIG. Therefore, corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

In the liquid crystal panel 100 of the present embodiment, as shown in FIG. 20, a counter substrate-side light-shielding film 23 is formed on the side of the counter substrate 20 in a region facing the boundary region of the pixel electrode 9a of the TFT array substrate 10. ing. The opposing substrate-side light-shielding film 23 has a layout similar to that of the light-shielding film (see FIG. 2) on the TFT array substrate 10 described in the first to fifth embodiments in plan view. Therefore, this liquid crystal panel 1
At 00, light (incident light L1) from the opposite substrate 20 side
Is incident on the boundary region of the pixel electrode 9a and is blocked by the opposing substrate-side light shielding film 23. Also, the incident light L1
Are the data lines 6a of the TFT array substrate 10, the light-shielding film 11a formed on the TFT array substrate 10 of the conventional liquid crystal panel 100 described with reference to FIG. 28, or the liquid crystal described in the first, second, third, and fifth embodiments. When reflected by the light shielding film 11 formed on the TFT array substrate 10 of the panel 100, T
Light is irradiated from the side of the FT array substrate 10 to the opposing substrate side light shielding film 23. Even in such a case, since the reflection surface 231 formed of an inclined surface or a curved surface is formed on both ends in the width direction on the upper surface of the opposing substrate-side light-shielding film 23, the reflection surface 231 is irradiated. Light is reflected light LL
As 2 ', the light is reflected and incident toward the pixel electrode 9a. Therefore, the light reflected on the reflection surface 231 of the opposing substrate-side light-shielding film 23 is emitted toward the TFT array substrate 10 and contributes to display. Therefore, light can be prevented from leaking from the boundary region of the pixel electrode 9a, and the utilization efficiency of incident light can be increased, so that bright display can be performed.

In order to form the opposing substrate-side light-shielding film 23 having such a structure, the method used in forming the light-shielding film 11a in the first embodiment can be used. Therefore, although detailed description is omitted, titanium,
A thin film made of a light-shielding material such as chromium, tungsten, tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon has a layer thickness of about 1,000 Å to about 5000 Å, preferably about 2,000 Å. After forming the resist mask, a side edge of the resist mask is positioned in a region where the reflection surface 231 of the opposing substrate side light shielding film 23 is to be formed when forming a resist mask for patterning the thin film. Then, dry etching is performed on the thin film using an etching gas containing oxygen. As a result, even in the portion of the thin film covered with the resist mask, the portion corresponding to the edge of the resist mask is etched, and the portion corresponding to the side edge of the resist mask is etched more. Accordingly, in the opposing substrate-side light-shielding film 23 formed by patterning from a thin film, the film thickness changes continuously at the portion located at the side edge of the resist mask. As a result, a reflection surface 231 formed of an inclined surface or a curved surface is formed in a portion where the side edge of the resist mask was located.

[Embodiment 7] This embodiment is also applicable to Embodiment 6
Similarly, on the counter substrate 20 side, the adjacent pixel electrode 9
The function of reflecting and irradiating the light applied to the area corresponding to the boundary area a to the pixel electrode 9a is described in
3.

FIG. 21 is a sectional view of the liquid crystal panel of this embodiment shown in FIG.
It is sectional drawing in the position corresponding to the -B 'line. The liquid crystal panel of this embodiment is of a type in which light (incident light L1) is incident from the counter substrate 20. The basic configuration of the TFT array substrate 10 is the same as that of the liquid crystal panel according to the sixth embodiment. Have in common.

That is, in the liquid crystal panel 100 of this example,
As shown in FIG. 21, the TF
An opposing substrate-side light-shielding film 23 is formed in a region of the T-array substrate 10 facing the boundary region of the pixel electrode 9a. The opposing substrate-side light-shielding film 23 is flat in the first to fifth embodiments.
The layout is similar to that of the light-shielding film (see FIG. 2) on the side of the TFT array substrate 10 described above. Therefore, in the liquid crystal panel 100, when light (incident light L1) is incident from the side of the counter substrate 20, it is
0 data line 6a, the light-shielding film 11a formed on the TFT array substrate 10 of the conventional liquid crystal panel 100 described with reference to FIG. 28, or the TFT of the liquid crystal panel 100 described in the first, second, third, and fifth embodiments. When the light is reflected by the light-shielding film 11 formed on the array substrate 10, light is emitted from the TFT array substrate 10 to the opposing substrate-side light-shielding film 23. In such a case, on the upper surface of the opposing substrate-side light-shielding film 23, a reflection surface 231 formed of an inclined surface or a curved surface is formed at both ends in the width direction. , As reflected light LL2 'toward the pixel electrode 9a. Therefore, the opposing substrate side light shielding film 23
The light reflected by the reflection surface 231 of the TFT array substrate 1
The light is emitted to the 0 side and contributes to display. Therefore, light can be prevented from leaking from the boundary region of the pixel electrode 9a, and the utilization efficiency of incident light can be increased, so that bright display can be performed.

Here, a plurality of reflection surfaces 231 are formed on the upper surface of the opposing-electrode-side light-shielding film 23. In order to form the opposing-substrate-side light-shielding film 23 having such a structure, the first embodiment is used. 2, the method used when forming the light shielding film 11a can be used. Therefore, although detailed description is omitted, a light-shielding material such as titanium, chromium, tungsten, tantalum, molybdenum, palladium, aluminum, an alloy of these metals, or doped silicon is formed on the counter substrate 20. A thin film having a thickness of about 1000 Å to about 5000 Å,
After forming the resist mask for patterning this thin film, preferably after forming it with a layer thickness of about 2000 angstroms, the side edge of the resist mask is formed in a region where the reflection surface 231 of the opposing substrate side light shielding film 23 is to be formed. Position. Then, dry etching is performed on the thin film using an etching gas containing oxygen. As a result, even in the portion of the thin film covered with the resist mask, the portion corresponding to the edge of the resist mask is etched, and the portion corresponding to the side edge of the resist mask is etched more. Accordingly, in the opposing substrate-side light-shielding film 23 formed by patterning from a thin film, the film thickness changes continuously at the portion located at the side edge of the resist mask.
As a result, a reflection surface 231 formed of an inclined surface or a curved surface is formed in a portion where the side edge of the resist mask was located. Here, the resist mask should be formed as a plurality of resist masks arranged in parallel in the width direction in the region where the counter electrode-side light shielding film 23 is to be formed, and the reflection surface 231 should be formed on the side edges of the resist masks in each row. Locate in the area. With such a configuration, an inclined surface or a curved surface is formed for each side edge of the plurality of resist masks. A plurality of reflection surfaces 231 can be easily formed.

Eighth Embodiment In the first to seventh embodiments, the reflection surfaces 111 and 231 are formed on the light-shielding film 11 of the TFT array substrate 10 or the opposing substrate-side light-shielding film 23 of the opposing substrate 20. In this case, as shown in FIG. 22, the upper surface of the light-shielding film 11 or the counter substrate 20 may be formed as a surface on which fine irregularities are formed (reflection surfaces 111 and 231). Such a reflective surface 111, 231
Then, the light irradiated there is irregularly reflected, and the reflected light L
The light enters the pixel electrode 9a as 1 'and LL2'. Therefore, the light reflected on the reflection surface 111 of the light-shielding film 11 or the reflection surface 231 of the opposing substrate-side light-shielding film 23 contributes to the display, so that the utilization efficiency of the incident light can be increased and the bright display can be achieved. It can be carried out.

The reflection surface 11 having such fine irregularities
In order to form 1, 231, the upper surface of this metal film is roughened by heat treatment when forming a metal film for forming the light-shielding film 11 a or the opposing substrate-side light-shielding film 23. Later, the metal film is patterned to form the light shielding film 1.
1a or the opposing substrate side light shielding film 23 is formed. For example, when the aluminum is formed by sputtering or immediately after the formation, the heat treatment temperature is usually set to about 100 ° C.
Increase the temperature to around 00 ° C to 250 ° C. As a result, the surface of the sputtered aluminum film becomes rough, and fine irregularities are formed. Therefore, if the irregularities are used, the reflection surfaces 111 and 231 that cause irregular reflection can be formed.

[Other Embodiments] In any of the above-described embodiments, the light-shielding film 11a has a configuration in which the reflected lights L1 'and L2' are incident on the respective pixel electrodes 9a located on both sides thereof. Are the pixel electrodes 9 located on both sides
The configuration may be such that the reflected lights L1 'and L2' are made incident on only one of the a. Also in this case, since the light shielding films 11a are formed so as to correspond to any of the pixel electrodes 9a, the reflected lights L1 'and L2' enter the pixel electrodes 9a from the reflection surface 111 of the light shielding film 11a. Configuration.

The surface shape of the light-shielding film 11a has been described as an example having a mountain-shaped cross-sectional shape, but may be formed to have a semicircular cross-sectional shape.

Further, the first to fifth embodiments have been described with respect to the example in which the opposing substrate-side light-shielding film 23 is formed on the opposing substrate 20, but a microlens is arranged so as to oppose each pixel electrode 9a. The opposing substrate-side light-shielding film 23 of the opposing substrate 20 may be omitted. Further, in the TFT array substrate 10, in addition to the light-shielding film 11a having the reflection surface 111, a light-shielding film is formed on the lower layer side of the TFT 30, and the incident light L2 from the TFT array substrate 10 side is used for forming the channel of the TFT 30. It may be combined with a mode of preventing the TFT 30 from being deteriorated by the photoelectric conversion effect when the light enters the region 1a.

[Laminated Structure of Liquid Crystal Display Panel] The overall configuration of each embodiment of the liquid crystal device configured as described above will be described with reference to FIGS. 23 and 24. FIG. Note that FIG. 23 is a plan view of the liquid crystal panel 100 together with the components formed thereon as viewed from the counter substrate 20 side, and FIG. FIG.

In FIG. 23, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof, and a peripheral partition 53 made of a light-shielding material is formed in an inner region thereof. . The data line driving circuit 101 and the mounting terminals 102
The scanning line driving circuit 104 is provided along one side of the FT array substrate 10, and is formed along two sides adjacent to the one side. If the delay of the scanning signal supplied to the scanning line does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines supply image signals from a data line driving circuit disposed along one side of the image display area, and the even-numbered data lines extend along the opposite side of the image display area. An image signal may be supplied from the provided data line driving circuit. By driving the data lines in a comb-tooth shape in this manner, the data line driving circuit 1
01 can be expanded, so that a complicated circuit can be formed. Further, on one remaining side of the TFT array substrate 10, a plurality of wirings 10 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided.
5 is provided, and a precharge circuit or an inspection circuit may be further provided by utilizing a portion under the peripheral parting 53 or the like. In at least one of the corners of the opposing substrate 20, a vertical conductive material 106 for establishing electric conduction between the TFT array substrate 10 and the opposing substrate 20.
Are formed. Then, as shown in FIG.
The counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 3 is fixed to the TFT array substrate 10 by the sealing material 52.

Note that, instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TA on which a driving LSI is mounted is mounted.
A B (tape automated, bonding) substrate may be electrically and mechanically connected to a terminal group formed on the periphery of the TFT array substrate 10 via an anisotropic conductive film. In addition, the counter substrate 20 and the TFT
On the light incident side or light exit side of the array substrate 10,
The type of the liquid crystal 50 to be used, that is, an operation mode such as a TN (twisted nematic) mode, an STN (super TN) mode, a D-STN (double-STN) mode, and a normally white mode / normal black mode. Then, a polarizing film, a retardation film, a polarizing plate and the like are arranged in a predetermined direction.

The liquid crystal panel thus formed is
For example, it is used in a projection type liquid crystal display device (liquid crystal projector). In this case, three liquid crystal panels 100
Are used as light valves for RGB, and light of each color separated through a dichroic mirror for RGB color separation is incident on each of the liquid crystal panels 100 as projection light. Therefore, no color filter is formed on the liquid crystal panel 100 of each of the above embodiments. However, in addition to the projection type liquid crystal display, a color liquid crystal display device such as a color liquid crystal television is formed by forming an RGB color filter together with a protective film in a region facing each pixel electrode 9a on the counter substrate 20. Can be. Further, by forming microlenses on the counter substrate 20 so as to correspond to each pixel, the efficiency of condensing incident light on the pixel electrode 9a can be increased, so that bright display can be performed. Furthermore, by stacking a number of interference layers having different refractive indices on the opposing substrate 20, the RG is utilized by utilizing the interference effect of light.
A dichroic filter for producing the B color may be formed. According to the counter substrate with the dichroic filter, a brighter color display can be performed.

The pixel switching TFT formed in each pixel is described as an example in which a normal stagger type or coplanar type polysilicon TFT is used. May be used for pixel switching.

[Application of Liquid Crystal Panel to Electronic Equipment]
An example of an electronic device including a liquid crystal panel will be described with reference to FIGS.

First, FIG. 25 is a block diagram showing a configuration of an electronic apparatus having a liquid crystal panel 100 configured similarly to the liquid crystal panel according to each of the above embodiments.

In FIG. 25, the electronic equipment includes a display information output source 1000, a display information processing circuit 1002, and a drive circuit 1.
004, liquid crystal panel 100, clock generation circuit 100
8 and a power supply circuit 1010. The display information output source 1000 includes a ROM (Read Only Memory),
It includes a RAM (Random Access Memory), a memory such as an optical disk, a tuning circuit for tuning and outputting an image signal of a television signal, and processes an image signal of a predetermined format based on a clock from a clock generation circuit 1008. And outputs it to the display information processing circuit 1002. The display information output circuit 1002 includes various known processing circuits such as an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and is input based on a clock signal. A digital signal is sequentially generated from display information, and a clock signal CL is generated.
Output to the drive circuit 1004 together with K. Drive circuit 10
04 drives the liquid crystal panel 100. Power supply circuit 101
0 supplies a predetermined power to each of the circuits described above. Note that the driver circuit 1004 may be formed over a TFT array substrate included in the liquid crystal panel 100. In addition, the display information processing circuit 1002 may be formed over the TFT array substrate.

As an electronic apparatus having such a configuration, FIG.
6, a projection type liquid crystal display device (liquid crystal projector), a multimedia-compatible personal computer (PC), and an engineering workstation (EWS), a pager, or a mobile phone, a word processor, a television, a viewfinder type, or Examples include a monitor direct-view video tape recorder, an electronic organizer, an electronic desk calculator, a car navigation device, a POS terminal, and a touch panel.

A projection type liquid crystal display device 1100 shown in FIG.
Prepares three liquid crystal modules each including the liquid crystal panel 100 in which the driving circuit 1004 is mounted on a TFT array substrate, and respectively prepares light valves 100R, 100R for RGB.
It is configured as a projector used as G, 100B. In this liquid crystal projector 1100, a lamp unit 1102 of a white light source such as a metal halide lamp is used.
When light is emitted from the three mirrors 1106 and 2
With the dichroic mirrors 1108, R, G,
The light components are separated into light components R, G, and B corresponding to the three primary colors B (light separating means), and the corresponding light valves 100R, 100R
G, 100B (liquid crystal panel 100 / liquid crystal light valve)
Respectively. At this time, since the light component B has a long optical path, the light component B is guided through a relay lens system 1121 including an input lens 1122, a relay lens 1123, and an output lens 1124 in order to prevent light loss. The light components R, G, and B corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B respectively enter the dichroic prism 1112 (light combining means) from three directions, are combined again, and then are projected. The image is projected as a color image on a screen 1120 or the like via 1114.

[0154]

As described above, in the liquid crystal panel according to the present invention, since the light-shielding film is formed in the boundary region between the respective pixel electrodes, light applied to this boundary region is reflected by the light-shielding film. Therefore, since there is no light leakage from the boundary region between the pixel electrodes, high-quality display can be performed. Further, even though the light shielding film reflects the light applied to the boundary region of the pixel electrode, the light shielding film has a reflection surface for reflecting and entering the light applied to the pixel electrode toward the pixel electrode. Light reflected by the film contributes to display. Therefore, it is possible to prevent light from leaking from the boundary region between the pixel electrodes and to use the incident light with high efficiency, so that a bright display can be performed. Also, in order to more reliably prevent light from leaking from the boundary region of the pixel electrode, even if the light-shielding film is formed wide, the use efficiency of incident light is high, and the quality is high.
Bright display can be performed.

[Brief description of the drawings]

FIG. 1 shows various elements formed in a plurality of pixels arranged in a matrix in a liquid crystal panel to which the present invention is applied.
It is an equivalent circuit diagram, such as wiring.

FIG. 2 is a plan view showing a configuration of each pixel formed on a TFT array substrate in the liquid crystal panel shown in FIG.

FIG. 3 is a cross-sectional view of the liquid crystal panel according to the first embodiment of the present invention at a position corresponding to line AA ′ in FIG. 2;

FIG. 4 is a cross-sectional view of the liquid crystal panel according to Embodiment 1 of the present invention at a position corresponding to line BB ′ of FIG. 2;

FIG. 5 is an equivalent circuit diagram showing a configuration of a TFT array substrate used for the liquid crystal panel shown in FIG.

FIGS. 6A to 6D are process cross-sectional views illustrating a method for manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 1 of the present invention.

FIGS. 7A to 7E show a method of manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 1 of the present invention;
FIG. 7 is a process cross-sectional view of each process performed after the process illustrated in FIG. 6.

FIGS. 8A to 8C show a method for manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 1 of the present invention;
FIG. 8 is a process cross-sectional view of each process performed after the process illustrated in FIG. 7.

FIGS. 9A to 9C show a method of manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 1 of the present invention;
FIG. 9 is a process cross-sectional view of each process performed after the process illustrated in FIG. 8.

FIGS. 10A to 10D are process cross-sectional views of respective processes performed after the process shown in FIG. 9 in the method for manufacturing a TFT array substrate of a liquid crystal panel according to the first embodiment of the present invention. .

FIG. 11 is a cross-sectional view of the liquid crystal panel according to Embodiment 2 of the present invention at a position corresponding to line BB ′ in FIG. 2;

12 (a) to 12 (c) are cross-sectional views of respective steps performed after the step shown in FIG. 8 in the method for manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 2 of the present invention. .

FIG. 13 is a cross-sectional view of the liquid crystal panel according to Embodiment 3 of the present invention at a position corresponding to line BB ′ in FIG.

14 (a) to (c) are cross-sectional views of respective steps performed after the step shown in FIG. 8 in the method for manufacturing a TFT array substrate of a liquid crystal panel according to Embodiment 3 of the present invention. .

FIG. 15 is a cross-sectional view of the liquid crystal panel according to Embodiment 4 of the present invention at a position corresponding to line BB ′ in FIG.

FIGS. 16A to 16D are process cross-sectional views of respective processes performed after the process shown in FIG. 8 in the method for manufacturing a TFT array substrate of a liquid crystal panel according to the fourth embodiment of the present invention. .

FIG. 17 is a cross-sectional view of the liquid crystal panel according to Embodiment 5 of the present invention at a position corresponding to line BB ′ in FIG.

18 is an explanatory diagram for explaining an effect of the liquid crystal panel shown in FIG. 17 on light incident from different directions.

19 (a) to (d) are cross-sectional views of respective steps performed after the step shown in FIG. 8 in the method of manufacturing the TFT array substrate of the liquid crystal panel according to the fifth embodiment of the present invention. .

FIG. 20 is a cross-sectional view of the liquid crystal panel according to the sixth embodiment of the present invention at a position corresponding to line BB ′ in FIG.

FIG. 21 is a cross-sectional view of the liquid crystal panel according to Embodiment 7 of the present invention at a position corresponding to line BB ′ in FIG.

FIG. 22 is a cross-sectional view of the liquid crystal panel according to Embodiment 8 of the present invention at a position corresponding to line BB ′ in FIG.

FIG. 23 is a plan view when the liquid crystal panel is viewed from a counter substrate side.

FIG. 24 is a sectional view taken along line HH ′ of FIG. 23;

FIG. 25 is a block diagram showing a circuit configuration of an electronic device using the liquid crystal panel according to the present invention as a display device.

FIG. 26 is a sectional view showing a configuration of an optical system of a projection type liquid crystal panel as an example of an electronic apparatus using the liquid crystal panel according to the present invention.

FIG. 27 is a cross-sectional view of a conventional liquid crystal panel at a position corresponding to line AA ′ in FIG.

FIG. 28 is a cross-sectional view of a conventional liquid crystal panel at a position corresponding to line BB 'in FIG.

[Explanation of symbols]

Reference Signs List 1a Semiconductor layer 1a 'Channel forming region 1b Low-concentration source region 1c Low-concentration drain region 1d High-concentration source region 1e High-concentration drain region 2 Gate insulating film 3a Scanning line 5, 8 Contact hole 6a Data line 7a Second interlayer insulating film (Lower interlayer insulating film) 7b Third interlayer insulating film (upper interlayer insulating film) 9a Pixel electrode 10 TFT array substrate 10 11a Light shielding film 11 Thin film for forming light shielding film 12 Underlying protective film 20 Counter substrate 23 Counter substrate Side light shielding film 30 Pixel switching TFT 50 Liquid crystal 53 Peripheral parting 70 Storage capacitance 71 Slant surface of second interlayer insulating film 100 Liquid crystal panel 101 Data line driving circuit 104 Scanning line driving circuit 105 Sampling circuit 106 Image signal line 111 TFT array substrate Reflective surfaces 203, 204 of the light shielding film formed on 05, 206, 207 Resist mask 231 Reflective surface of opposing substrate-side light-shielding film G1, G2... Gm Scan signal L1, L2 Incident light L1 ', L2', LL1 ', LL2' Reflected light S1, S2. Pixel signal

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H091 FA14Y FB12 FC26 FD04 GA07 GA13 LA16 2H092 GA59 JA25 JA35 JA36 JA39 JB07 JB51 JB56 JB64 JB69 KA04 KA05 KA10 KB04 KB05 KB25 MA05 MA07 MA15 MA18 MA19 MA25 MA41 NA37 MA06 PA09 PA12 RA05 5G435 AA00 AA03 BB12 BB17 CC09 CC12 DD02 EE33 EE37 FF03 FF13 GG01 GG03 GG04 GG28 KK05

Claims (29)

[Claims] 1. A pixel electrode and a thin film transistor for driving the pixel electrode are arranged in a matrix on a first one of first and second substrates sandwiching a liquid crystal. A liquid crystal panel in which a light-shielding film is formed on at least one of a second substrate and a region corresponding to a boundary between adjacent pixel electrodes, wherein the light-shielding film comprises the first and second substrates. A liquid crystal panel comprising a reflection surface for reflecting a part of light incident from one of the substrates. 2. The light-shielding film according to claim 1, wherein the reflection surface of the light-shielding film reflects a part of light incident from one of the first and second substrates and is on both sides of the light-shielding film. The liquid crystal panel is formed so as to be incident on each of the pixel electrodes located at the same position. 3. The first substrate according to claim 1, wherein the thin film transistor, the light-shielding film, and the pixel electrode have a lower interlayer insulating film and an upper interlayer insulating film interposed therebetween, respectively, in this order. A liquid crystal panel characterized by being formed thereon. 4. The reflection film according to claim 3, wherein the light-shielding film reflects a part of light incident from a second substrate side of the first and second substrates and causes the light to enter the pixel electrode. A liquid crystal panel having a surface provided as an inclined surface or a curved surface on an upper surface of the light shielding film. 5. The light-shielding film according to claim 4, wherein the thickness of the light-shielding film changes continuously in a region corresponding to the reflection surface, so that the reflection surface is formed on the upper surface of the light-shielding surface. A liquid crystal panel characterized by the above-mentioned. 6. The light-shielding film according to claim 5, wherein the light-shielding film includes a plurality of reflection surfaces formed of an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode in a width direction. A liquid crystal panel characterized by the following. 7. The light-shielding film according to claim 5, wherein the thickness of the light-shielding film is continuously reduced from the center in the width direction to both sides, so that the reflection surfaces are formed at both ends of the upper surface of the light-shielding surface. A liquid crystal panel characterized by being made. 8. The light-shielding film according to claim 4, wherein a region corresponding to the reflection surface is formed on an inclined surface or a curved surface of the lower interlayer insulating film. A liquid crystal panel, wherein the reflection surface is formed on the liquid crystal panel. 9. The light-shielding film according to claim 8, wherein the light-reflection film includes a plurality of reflection surfaces each including an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode in a width direction. A liquid crystal panel characterized by the following. 10. The light-shielding film according to claim 8, wherein both end portions in the width direction are formed on an inclined surface or a curved surface of the lower interlayer insulating film, so that both end portions of an upper surface of the light-shielding surface are provided. A liquid crystal panel, wherein the reflection surface is formed on the liquid crystal panel. 11. The reflection light according to claim 3, wherein the light-shielding film reflects part of light incident from a second substrate side of the first and second substrates and causes the light to enter the pixel electrode. A liquid crystal panel comprising a surface having fine irregularities formed on an upper surface of the light-shielding film. 12. The light-shielding film according to claim 3, wherein the light-shielding film reflects part of light incident from the first substrate side of the first and second substrates and causes the light to enter the pixel electrode. A liquid crystal panel having a reflection surface as an inclined surface or a curved surface on a lower surface of the light shielding film. 13. The light shielding film according to claim 12, wherein:
By forming a region corresponding to the reflection surface on an inclined surface or a curved surface of the lower interlayer insulating film,
A liquid crystal panel, wherein the reflection surface is formed on a lower surface of the light shielding film. 14. The light shielding film according to claim 13, wherein:
A liquid crystal panel comprising: a plurality of reflection surfaces each including an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode in a width direction. 15. The light shielding film according to claim 13, wherein:
A liquid crystal, wherein both end portions in the width direction are formed on an inclined surface or a curved surface of the lower interlayer insulating film, so that the reflection surfaces are formed at both end portions on the lower surface of the light shielding surface. panel. 16. The liquid crystal panel according to claim 1, wherein the light shielding film is formed on a side of the second substrate. 17. The light shielding film according to claim 16, wherein
An upper surface of the light-shielding film, wherein the reflection surface reflects a part of light emitted from the first substrate side of the first and second substrates and makes the light incident on the pixel electrode on the second substrate. A liquid crystal panel, wherein the liquid crystal panel is provided as an inclined surface or a curved surface. 18. The light-shielding film according to claim 17, wherein:
A liquid crystal panel, wherein the reflective surface is formed on the upper surface of the light-shielding surface by continuously changing the film thickness in a region corresponding to the reflective surface. 19. The light shielding film according to claim 18, wherein:
A liquid crystal panel comprising: a plurality of reflection surfaces each including an inclined surface or a curved surface for reflecting and entering light toward the same pixel electrode in a width direction. 20. The light-shielding film according to claim 18,
A liquid crystal panel, wherein the reflection surface is formed at both end portions of the upper surface of the light-shielding surface by the film thickness being continuously reduced from the center to both sides in the width direction. 21. The light-shielding film according to claim 16,
Fine irregularities are formed on the upper surface of the light-shielding film so that the reflection surface that reflects a part of light emitted from the first substrate side of the first and second substrates and makes the light incident on the pixel electrode is formed. A liquid crystal panel, characterized in that it is provided as a flat surface. 22. The light-shielding film according to claim 1, wherein the light-shielding film is formed of any one of titanium, chromium, tungsten, tantalum, molybdenum, palladium, aluminum, an alloy of these metals, and silicon. A liquid crystal panel characterized by the following. 23. A projection type liquid crystal display device using the liquid crystal panel defined in any one of claims 1 to 22 as a light valve. 24. An electronic apparatus using the liquid crystal panel defined in claim 1 as a display device. 25. The method for manufacturing a liquid crystal panel according to claim 5, wherein in forming the light shielding film, a thin film for forming the light shielding film is formed, and then the light shielding film is formed. When a resist mask covering an area substantially overlapping with the area to be formed is formed on the upper surface of the thin film, the side edge of the resist mask is located in an area where the reflection surface is to be formed, and then oxygen is removed. A method for manufacturing a liquid crystal panel, wherein dry etching is performed on the thin film with an etching gas containing the gas. 26. The method for manufacturing a liquid crystal panel according to claim 8, wherein, when forming the light-shielding film, the lower-layer-side interlayer insulating film is formed, and then substantially overlaps a region where the light-shielding film is to be formed. When forming a resist mask covering the region on the upper surface of the lower interlayer insulating film, the side edge of the resist mask is located in a region where the reflection surface is to be formed, and then an etching gas containing oxygen Dry-etching the upper surface of the lower interlayer insulating film to form an inclined surface or a curved surface on the upper surface of the lower interlayer insulating film, and then forming the light-shielding film on the upper surface of the lower interlayer insulating film. Forming a thin film, and thereafter patterning the thin film to form the light-shielding film. 27. The method for manufacturing a liquid crystal panel according to claim 13, wherein, when forming the light-shielding film, the lower-layer-side interlayer insulating film is formed, and then substantially overlaps a region where the light-shielding film is to be formed. When forming a resist mask having a window opened on the upper surface of the lower interlayer insulating film, a side edge of the resist mask is located in a region where the reflection surface is to be formed, and then contains oxygen. After forming an inclined surface or a curved surface on the upper surface of the lower interlayer insulating film by performing dry etching on the upper surface of the lower interlayer insulating film with an etching gas, the light shielding film is formed on the upper surface of the lower interlayer insulating film. A method for manufacturing a liquid crystal panel, comprising: forming a thin film for forming a light-shielding film; and then patterning the thin film to form the light-shielding film. 28. The resist mask according to claim 25, wherein the resist mask is formed as a plurality of resist masks arranged in parallel in a width direction of a region where the light-shielding film is to be formed, and side edges of the resist masks in each row. A method for manufacturing a liquid crystal panel, wherein an edge is located in a region where the reflection surface is to be formed. 29. In the method of manufacturing a liquid crystal panel according to claim 11, wherein the light shielding film is formed by performing a heat treatment when forming a metal film for forming the light shielding film. Forming the irregularities by roughening the upper surface of the liquid crystal panel, and then patterning the metal film to form the light-shielding film.