JP2000010116A - Production of liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the failure by static electricity during the course of production and to enable the execution of inspection before cutting of terminal wiring by cutting transparent substrates in the portions of impurity resistors formed on the outer side of a display region of the transparent substrates. SOLUTION: The plural impurity resistors R1 to RN, GR1 to GRN, DR1 to DRN consisting of impurity introduced silicon are formed on the outer side of the display region 24. Signal electrodes (data bus lines) 17, scanning electrodes (gate bus lines) 15 and terminal wiring 15a, 17a are connected via these impurity resistors. As a result, the impurity resistors exist between the signal electrodes 17 and the scanning electrodes 15 even if voltage is impressed to the signal electrodes 17 and the scanning electrodes 15 and, therefore, a shorting state does not occur and the inspection in the state of connecting the terminal wiring 15a, 17a connected may be executed. In such a case, the resistance value of the impurity resistors is preferably 50 kΩ to 1 MΩ. Since the substrate is cut in the portions of the impurity resistors consisting of the polysilicon, the shorting by the peeling of metallic films is averted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device in which a terminal wiring is formed in order to prevent breakage due to static electricity during manufacturing, and is particularly suitable for manufacturing a liquid crystal display device having a built-in drive circuit. The present invention relates to a method for manufacturing a liquid crystal display device.

[0002]

2. Description of the Related Art An active matrix type liquid crystal display device is provided with a switch which is turned off when not selected and cuts off a signal in each pixel to prevent crosstalk. It shows excellent display characteristics as compared with. In particular, T as a switch
A liquid crystal display device using an FT (Thin Film Transistor) has a high TFT driving capability.
It has excellent display characteristics comparable to a CRT (Cathode-Ray Tube).

Generally, a liquid crystal display device has a structure in which liquid crystal is sealed between two transparent substrates. Of the two surfaces (opposing surfaces) of the transparent substrate facing each other, a counter electrode, a color filter, an alignment film, and the like are formed on one surface side, and a TFT, a pixel electrode, and an alignment film are formed on the other surface side. A film or the like is formed. Further, a polarizing plate is attached to a surface of each transparent substrate opposite to the facing surface. These two polarizing plates are arranged, for example, such that the polarization axes of the polarizing plates are orthogonal to each other. According to this, a mode in which light is transmitted when no electric field is applied and light is blocked when an electric field is applied, That is, a normally white mode is set. On the contrary, when the polarization axes of the two polarizing plates are parallel, a normally black mode is set. Hereinafter, the transparent substrate on which the TFT and the pixel electrode are formed is referred to as a TFT substrate, and the transparent substrate on which the counter electrode and the like are formed is referred to as a counter substrate.

In recent years, TFTs using thin-film polysilicon formed by a low-temperature process have been developed and used in liquid crystal display devices. When a TFT is formed by a low-temperature process, there is an advantage that an inexpensive glass substrate can be used as a transparent substrate. Further, since the polysilicon TFT has a higher driving capability and can be miniaturized as compared with the amorphous silicon TFT, there is an advantage that the aperture ratio is improved and a bright image can be obtained. Further, in the case of the amorphous silicon TFT, since the driving speed is slow, it was necessary to separately prepare a driving IC and connect it to the liquid crystal display device.
Since the driving speed of the polysilicon TFT is high, a driving (driver) circuit can be formed on a glass substrate. This has the advantage that the number of input terminals of the liquid crystal display device can be reduced to about 40 and the product cost can be reduced.

FIG. 9 is an enlarged plan view showing a part of a TFT substrate of a liquid crystal display device which is being manufactured by a conventional method.
FIG. 2 is a schematic view showing the entire TFT substrate of the liquid crystal display device. The manufacturing method of the liquid crystal display device will be described with reference to these drawings. First, a polysilicon film 52a is formed on a glass substrate 50, and a gate insulating film (not shown) is formed thereon. Thereafter, a plurality of gate bus lines 55 passing over the polysilicon film 52a are formed. And
An impurity is introduced into the polysilicon film 52a to form a source / drain. The source / drain and the gate bus line 55 constitute a TFT 70.

Next, after forming an interlayer insulating film (not shown) on the glass substrate 50, a data bus line 57 is formed so as to intersect the gate bus line 55 at right angles. This data bus line 57 is electrically connected to the drain of the TFT 70 via a contact hole 53a formed in the interlayer insulating film. Then, after forming an interlayer insulating film (not shown) on the entire surface of the substrate, ITO is formed on the interlayer insulating film.
A pixel electrode 59 made of (indium tin oxide) is formed. This pixel electrode 59 is electrically connected to the source of the TFT 70 via a contact hole 53b provided in the interlayer insulating film. As shown in FIG. 9, the TFT 70 and the pixel electrode 59 are formed for each rectangular area defined by the gate bus line 55 and the data bus line 57. One rectangular area is one pixel, and the display area 6 shown in FIG.
Reference numeral 3 denotes an area where these pixels are gathered.

In order to prevent damage due to static electricity generated at various places in the manufacturing process of the liquid crystal display device, one end of each gate bus line 55 and each data bus line 57 is extended to outside the display area 63, and termination wiring ( GND line) 55
a, 57a, and the potential of each gate bus line 55 and each data bus line 57 are set to be the same. Further, on the other end side of the gate bus line 55 and the data bus line 57, a TFT formed simultaneously with the TFT 70 in the display area 63 is formed.
The gate driver circuit 61 and the data driver circuit 62 are formed by FT. These gate driver circuits 61
The data driver circuit 62 is connected to an input terminal 71 for connecting to an external circuit via a flexible cable. In this case, the input terminal 71 is also connected to the terminal wiring 55a in order to avoid damage to the driver circuits 61 and 62 due to generation of static electricity in the manufacturing process. Thus, a TFT substrate is manufactured. In FIG. 10,
G _{1 to} G _N and D _{1 to DN} indicate gate bus lines and data bus lines extending outward from the display area 63.

On the other hand, a counter substrate having a counter electrode, a color filter and the like formed on a glass substrate is prepared. Then, as shown in FIG.
(57) The surface on which the TFT 70 and the like are formed and the surface of the counter substrate 82 on which the counter electrode (ITO film) 82a is formed are arranged so as to face each other, and a liquid crystal 83 is filled between the two to seal the sealant. Seal at 84.

Thereafter, the TFT substrate 81 and the opposing substrate 82 are cut at a portion inside the terminal wirings 55a and 57a to have a predetermined size. Thereby, the liquid crystal display device is completed.

[0010]

However, in the above-mentioned conventional method of manufacturing a liquid crystal display device, the input terminals 21 and
Since each gate bus line 55 and each data bus line 57 are connected to each other via the terminal wirings 55a and 55b, inspection (substrate inspection) cannot be performed during manufacturing.

In general, the bus lines 55 and 57 are formed of a metal thin film such as aluminum. In a polysilicon TFT liquid crystal display device, the film thickness of the thin film wiring (bus line) is generally smaller than that of an amorphous silicon TFT. Because of the thickness, the gate bus line 55 and the data bus line 57 tend to peel off when cutting the substrate. For this reason, when cutting the glass substrate, a part of the metal thin film is peeled off, and as shown in FIG.
(TO film) 82a, and an operation failure may occur.

In order to avoid such a problem, it is conceivable to remove the counter electrode (ITO film) 82a outside the sealant 84. However, in this case, a patterning step of the ITO film is required, which causes an increase in manufacturing cost. In addition, as shown in FIG. 13, the wiring fragments 85 peeled off from the glass substrate may short-circuit the adjacent bus lines 55 (57). Further, the gate bus line 55 and the data bus line 57 made of a metal thin film may be corroded from the cut surface, and the corrosion may progress toward the inside.

It is also conceivable to form an ITO film on the scribe line portion and connect the bus line and the terminal wiring through the ITO film. In this case, since the formation of the ITO film is a final step, Until the anti-static measures cannot be taken.
The present invention provides a liquid crystal display that can prevent damage due to static electricity generated during manufacturing, can execute an inspection before cutting a terminal wiring, and can avoid an operation failure caused by peeling of the wiring at the time of cutting. It is an object to provide a method for manufacturing a display device.

[0014]

SUMMARY OF THE INVENTION The object of the present invention is to form a plurality of impurity resistors made of impurity-doped polysilicon outside a display region on a transparent substrate, and to form the display region on the transparent substrate. Forming a plurality of signal electrodes and scanning electrodes respectively connected to one end of the plurality of impurity resistors, and forming a terminating wire commonly connecting the other ends of the impurity resistors; And a step of cutting the transparent substrate at a portion.

The above-mentioned problem is solved by forming a plurality of signal electrodes and scanning electrodes passing through a display region of a transparent substrate to define pixels, forming a polysilicon thin film transistor and a pixel electrode for each pixel, and forming a pixel electrode. Forming, on the outside, a plurality of impurity resistors made of impurity-doped polysilicon connected to the signal electrode and the scan electrode, respectively; and a terminating wire commonly connecting the plurality of impurity resistors. And a step of cutting the transparent substrate.

An object of the present invention is to form a plurality of signal electrodes and scanning electrodes passing through a display area of a transparent substrate to define pixels, form a polysilicon thin film transistor and a pixel electrode for each pixel, and A plurality of first impurity resistors formed of impurity-doped polysilicon connected to the signal electrode and the scan electrode on the outside, a test circuit connected to the plurality of impurity resistors, a termination line, the test circuit and the termination A step of forming a second impurity resistor made of impurity-doped polysilicon for connection with a wiring, a step of driving the test circuit to perform a test, and a step of driving the test circuit to perform the test on the transparent substrate. And a step of cutting the liquid crystal display device.

Hereinafter, the operation will be described. In the present invention, a plurality of impurity resistors made of impurity-doped polysilicon are formed outside the display region, and a signal electrode (data bus line), a scanning electrode (gate bus line), and a terminal line are connected via the impurity resistors. Connecting. Thus, even when a voltage is applied to the signal electrode and the scanning electrode, a short circuit state does not occur because the impurity resistance is interposed between the signal electrode and the scanning electrode, and the terminal wiring remains connected. Inspection can be performed.

In this case, the resistance value of the impurity resistor is 50 kΩ.
It is preferable to set it to 1 MΩ. If the resistance value of the impurity resistor is too small, the inspection cannot be performed with the terminal wiring still connected. On the other hand, if the resistance value of the impurity resistor is too large, the effect of preventing damage due to static electricity during the production becomes small. Although the resistance value of the impurity resistor can be adjusted by the amount of impurities introduced into the polysilicon, it is easy to obtain a resistance value of 50 kΩ to 1 MΩ with a length of several mm. Further, since the polysilicon film serving as the impurity resistance can be formed simultaneously with the polysilicon film serving as the active region of the polysilicon thin film transistor in the display region, an increase in the number of manufacturing steps can be suppressed.

In the case of a liquid crystal display device using a polysilicon thin film transistor, since the polysilicon film is formed at an early stage of the manufacturing process, the impurity resistance is formed at a relatively fast stage. Therefore, at the same time as the formation of the signal electrode and the scanning electrode, the signal electrode and the scanning electrode can be connected to the terminal wiring via the impurity resistance. Thus, the effect of preventing damage due to static electricity can be obtained from a relatively early stage of manufacturing.

Further, in the present invention, since the transparent substrate is cut at the portion of the impurity resistance made of polysilicon, unlike the case of a metal thin film, a short circuit caused by peeling of the metal thin film is avoided. In the case of an active matrix type liquid crystal display device, a polysilicon thin film transistor is formed outside the display region, and a driving circuit can be formed by these thin film transistors. Further, by forming the inspection circuit on the glass substrate, a special inspection device becomes unnecessary. Therefore, when the polysilicon thin film transistor is formed in the display area on the transparent substrate, the polysilicon thin film transistor is also formed outside the display area, and a driving circuit or an inspection circuit is formed by the polysilicon thin film transistor outside these display areas. Is preferred.

[0021]

Embodiments of the present invention will be described below with reference to the accompanying drawings. (First Embodiment) FIGS. 1 to 4 are cross-sectional views showing a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention, and FIG. 5 is an enlarged view of a part of a TFT substrate being manufactured. Plan view, FIG. 6
FIG. 2 is a schematic view showing the whole of the TFT substrate. 1 and 2 are sectional views taken along line AA of FIG. 5, and FIGS. 3 and 4 are sectional views taken along line BB of FIG. In the following description, the manufacture of the TFT in the display area 24 is described. However, the TFT in the gate driver circuit 22 and the TFT in the data driver circuit 23 also have the TF in the display area 24.
The wirings in the driver circuits 22 and 23 can be formed at the same time as the gate bus line 15 and the data bus line 17.

First, as shown in FIGS. 1A and 3A, a base protective film 1 made of SiO _{2 is formed} on a glass substrate 10.
1 is formed to a thickness of about 200 nm, and an amorphous silicon film 12
It is formed to a thickness of 0 nm. At this time, for example, monosilane and hydrogen gas are used for forming the amorphous silicon film 12.

Next, the amorphous silicon film 12 is irradiated with an excimer laser to convert the amorphous silicon into polysilicon. Thereafter, the polysilicon film is selectively etched by dry etching using a chlorine gas, and as shown in FIGS. 1B, 3B, 5 and 6, the TFT 20 and the impurity resistors R ₁ to R _{1 are formed} . R _N , GR ₁ -G
R _N, DR ₁ ~DR _N polysilicon only in the region for the formation film 12a, 12b, leaving the 12c.

Thereafter, the substrate is formed by using a plasma CVD method.
An insulating film 14 is formed on the entire upper surface of the plate 10.
4 covers the polysilicon films 12a, 12b and 12c.
U. The insulating film 14 is made of, for example, SiO_TwoThe thickness of 150nm
It is formed by depositing on the surface. Next, FIG.
3 (c), as shown in FIG.
An aluminum film is formed to a thickness of about 300 nm on the
By patterning the aluminum film, multiple
Gate bus line (scanning electrode) 15 and terminal wiring 1
5a are formed at the same time. Gate bus line 15
The portion located above the polysilicon film 12a is TF
The gate of T20. In FIG. 6, G₁~ G
_NIs a gate bus line extending outward from the display area 24.
15 is shown.

Thereafter, portions of the insulating film 14 not covered with the gate bus line 15 and the terminal wiring 15a are removed by etching with CHF ₃ gas. Then, the polysilicon films 12a exposed on both sides of the gate bus line 15 are formed.
Then, for example, boron (B) is ion-implanted to form a source / drain of the TFT 20. At this time, impurities are simultaneously added to the polysilicon films 12b and 12c, for example, at 5 × 10 ¹⁴ /
is ion implanted at a concentration of cm ^2, a polysilicon film 12
The resistance values of b and 12c are set to about 50 kΩ to 1 MΩ. Thereby, the impurity resistances R _{1 to} R _N and GR ₁ to GR ₁ shown in FIG.
GR _N , DR _{1 to} DR _N are formed. Conditions for the ion implantation are, for example, an acceleration voltage of 30 kV when boron (B) is used as an impurity, and an acceleration voltage of 10 kV when phosphorus (P) is used as an impurity.

Next, as shown in FIGS. 2A and 4A, an interlayer insulating film 16 is formed on the entire surface of the substrate 10 by, for example, a plasma CVD method. The line 15, the end point wiring 15a, and the polysilicon films 12a, 12b, and 12c are covered. Next, FIG.
4 (b) and FIG. 4 (b), the interlayer insulating film 16 is selectively etched to form a contact hole 16a reaching the source / drain (polysilicon film 12a) of the TFT 20, a polysilicon film 12b, A contact hole 16b exposing both ends of the gate bus line 15c;
In addition, a contact hole 16c in which a portion of the termination wiring 15a on the polysilicon film 12b side is exposed, and a contact hole (not shown) in which both ends of the termination wiring 15a are exposed. Thereafter, an aluminum film is formed on the entire upper surface of the substrate 10 by, for example, a sputtering method to cover the interlayer insulating film 16,
The aluminum film is etched to form a data bus line (signal electrode) 17, terminal wiring 17a, intermediate electrode 17c, and connection wirings 17d and 17e. In this case, the data bus line 17 is connected to the T via the contact hole 16a.
The intermediate electrode 17c is connected to the drain of the FT 20, and the intermediate electrode 17c is connected to the source of the TFT 20 via another contact hole 16a. The gate bus line 15 is electrically connected to the polysilicon film 12b through the contact holes 16b and 16c and the connection wirings 17d and 17e. The data bus line 17 through a contact hole (not shown) polysilicon film 12c (impurity resistor DR ₁ ~
DR _N ), and further electrically connected to the termination wiring 17a via the polysilicon film 12c. Furthermore, the terminal wiring 15a and the terminal wiring 17a are connected via a contact hole (not shown). In FIG. 6, D
_{1 to DN} indicate the data bus lines 17 extending outward from the display area 24.

Next, as shown in FIGS. 2C and 4C, an interlayer insulating film 18 is formed on the entire surface of the substrate 10 to a thickness of about 300 nm.
And covers the data bus line 17, the terminating wiring 17a, the intermediate electrode 17c, and the connecting wirings 17d and 17e with the interlayer insulating film 18. Then, the interlayer insulating film 18 is selectively etched to form a contact hole reaching the intermediate electrode 17c. At this time, in the region where the input terminal 21 (see FIG. 6) is formed, an opening is formed so that the wiring is exposed.

Next, after an ITO film is formed on the entire surface of the substrate 10 by a sputtering method, the ITO film is selectively etched to form a pixel electrode 19. In the formation region of the input terminal 21 (see FIG. 6), the exposed wiring is covered with an ITO film, and these ITO films are covered with the input terminal 21.
And After that, an alignment film (not shown) is formed on the display region 24 of the substrate 10. Thus, a TFT substrate is completed.

On the other hand, a counter substrate in which a counter electrode, a color filter, an alignment film and the like are formed on a glass substrate is prepared. Then, as shown in FIG.
The surface on which the counter electrodes 32a and the like are formed and the surface on which the counter electrodes 32a and the like are formed face each other, and a liquid crystal 33 is filled between them and sealed with a sealant. Then
A board inspection is performed by connecting an inspection apparatus (not shown) to the input terminal 21 shown in FIG. At this time, the terminal wires 15a, 17
a input terminal 21, impurity resistances R ₁ to R _N having a resistance value of 50kΩ~1MΩ between the gate bus line 15 and the data bus line _{17, GR 1 ~GR N, DR} 1 ~DR N
Is connected, the inspection can be performed without any trouble even if the terminal wirings 15a and 17a remain connected.

Thereafter, when it is determined that there is no abnormality in the inspection, cutting through the portions indicated by broken lines in FIGS. 6 and 7, ie, impurity resistances R _{1 to} R _N , GR _{1 to} GR _N , and DR _{1 to} DR _N is performed. The TFT substrate 31 and the counter substrate 32 are cut along the line. Thereafter, polarizing plates are arranged on the outer surfaces of the TFT substrate 31 and the counter substrate 32, and the liquid crystal display device is completed. In the present embodiment, the impurity resistances R _{1 to} R of 50 kΩ to ₁ MΩ are provided between the terminal lines 15 a and 17 a and the gate bus line 15, the data bus line 17 and the input terminal 21.
_N, GR _{1 ~GR N,} since there is provided a DR ₁ ~DR _N, terminated bus 15a. The board inspection can be performed with the connection of 17a. As a result, the defective substrate does not need to be formed into a panel, so that the manufacturing cost can be reduced. Further, since each gate bus line 15 and each data bus line 17 are electrically connected to each other via the termination wirings 15a and 17a, damage due to static electricity generated at various points in the manufacturing process can be avoided. Moreover, in this embodiment, impurity resistances _{R 1 ~R N, GR 1 ~GR} N, DR 1
The ～DR _N relatively formed at an early stage, the gate bus lines 15 and the data bus line 17 is simultaneously terminated wire 15a and its formation, since connected to 17a, the effect of preventing damage due to static electricity from the initial stage of the manufacturing process Is obtained.

Further, in this embodiment, the substrate is cut.
When cutting, the impurity resistance R₁~ R _N, GR₁~ G
R_N, DR₁~ DR_NPart, that is, the polysilicon film
Is different from metal wiring such as aluminum.
Thus, a short circuit due to the peeling of the wiring is prevented. This
Production yields and product costs
Will be possible. Also, corrosion of metal from the cut surface is avoided.
You.

(Second Embodiment) FIG. 8 shows a second embodiment of the present invention.
FIG. 7 is a schematic view illustrating a method for manufacturing the liquid crystal display device of the embodiment. 8, the same components as those in FIG. 6 are denoted by the same reference numerals, and the detailed description thereof will be omitted. In the present embodiment, as shown in FIG. 8, driver circuits 22 and 23 are formed at one end of the gate bus line and the data bus line, and inspection circuits 25 and 26 are formed at the other end. The first impurity resistors GR _{1 to} GR ₁ are provided between the gate bus lines and the data bus lines and the inspection circuits 25 and 26.
R _N, DR ₁ ~DR _N is formed, the test circuits 25 and 26 and the terminal wiring 15a, the second impurity resistor G between the 17a
r _{1 to} Gr _N and Dr _{1 to} Dr _N are formed. These impurity resistances Gr _{1 to} Gr _N and Dr _{1 to} Dr _N are formed simultaneously with the polysilicon film serving as the source / drain of the polysilicon TFT, as in the first embodiment.

At the time of board inspection, a predetermined inspection is performed by supplying a power supply voltage and a signal to the inspection circuits 25 and 26. afterwards,
The portion indicated by a broken line in the figure, i.e., impurities resistance GR ₁ ~G
R _N, along a straight line passing through the DR ₁ ~DR _N cutting the substrate. Also in the present embodiment, in addition to obtaining the same effect as the first embodiment, since dedicated test circuits 25 and 26 are provided, there is no need to connect to an external test circuit, and the test process is simplified. There is an effect that can be made.

[0034]

As described above, according to the present invention,
Since an impurity resistor made of impurity-doped polysilicon is formed between the signal electrode and the scanning electrode and the terminating wiring, even if a voltage is applied to the signal electrode and the scanning electrode, the impurity remains between the signal electrode and the scanning electrode. Since the resistance is interposed, the short-circuit state does not occur, and the inspection can be performed in a state where the terminal wiring is connected. Thereby, the reliability of the liquid crystal display device is improved.

Further, in the present invention, since the substrate is cut at the impurity resistance portion made of polysilicon, a short circuit caused by peeling of the metal thin film can be avoided, and corrosion from the cut surface can be avoided, and the production yield can be reduced. improves.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view (part 1) illustrating a method for manufacturing a liquid crystal display device according to a first embodiment of the present invention, which is a cross-sectional view in a TFT formation region.

FIG. 2 is a cross-sectional view (part 2) illustrating the method for manufacturing the liquid crystal display device according to the first embodiment of the present invention, which is a cross-sectional view in a TFT formation region.

FIG. 3 is a cross-sectional view (No. 3) illustrating the method for manufacturing the liquid crystal display device of the first embodiment of the present invention, which is a cross-sectional view in an impurity resistance forming region.

FIG. 4 is a cross-sectional view (part 4) illustrating the method for manufacturing the liquid crystal display device of the first embodiment of the present invention, which is a cross-sectional view in an impurity resistance forming region.

FIG. 5 is a diagram showing a TFT during manufacturing according to the first embodiment of the present invention;
It is a top view which expands and shows a part of board | substrate.

FIG. 6 is a diagram showing a TFT in the course of manufacture according to the first embodiment of the present invention.
It is a schematic diagram which shows the whole board | substrate.

FIG. 7 is a cross-sectional view showing a junction between a TFT substrate and a counter substrate in the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 8 is a schematic view illustrating a method for manufacturing a liquid crystal display device according to a second embodiment of the present invention.

FIG. 9 shows a TF of a liquid crystal display device being manufactured by a conventional method.
It is a top view which expands and shows a part of T board | substrate.

FIG. 10 is a schematic diagram showing the entire TFT substrate of the liquid crystal display device.

FIG. 11 is a cross-sectional view showing a junction between a TFT substrate and a counter substrate in a method of manufacturing a liquid crystal display device according to a conventional method.

FIG. 12 is a cross-sectional view showing a conventional problem (part 1).

FIG. 13 is a sectional view showing a conventional problem (No. 2).

[Explanation of symbols]

10, 50 glass substrate, 12 amorphous silicon film, 12a to 12c, 52a polysilicon film, 15, 55 gate bus line (scanning electrode), 15a, 17a, 55a, 57a terminal wiring, 17, 57 data bus line (signal electrode) ), 19 pixel electrodes, 20 TFTs, 22 gate driver circuits, 23 data driver circuits, 25, 26 inspection circuits, 31, 81 TFT substrates, 32, 82 opposing substrates, 34, 84 sealants, R _{1 to} R _N , _{GR 1 ~GR N, DR 1 ~DR} N impurity resistance.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 GA59 HA28 JA25 JA33 JA35 JA39 JB56 JB77 KA04 KA05 KA10 KA12 KA18 KB04 MA08 MA27 MA30 MA37 NA14 NA16 NA18 NA30 PA06 PA08 5C094 AA31 AA41 BA03 BA43 CA19 EA04 EB05 EB05 EB05 EB05 EB05 EB05 EB05

Claims (6)

[Claims] A step of forming a plurality of impurity resistors made of impurity-doped polysilicon outside a display region on a transparent substrate; and an end of the plurality of impurity resistors passing through the display region on the transparent substrate. Forming a plurality of signal electrodes and scanning electrodes respectively connected to the side, and forming a terminating wire commonly connecting the other end of the impurity resistor; and cutting the transparent substrate at the impurity resistor portion And a method for manufacturing a liquid crystal display device. 2. The method according to claim 1, wherein the resistance value of the impurity resistor is set to 50 kΩ to 1 MΩ. 3. A plurality of signal electrodes and scanning electrodes passing through a display area of the transparent substrate are formed to define pixels, and a polysilicon thin film transistor and a pixel electrode are formed for each pixel.
Forming a plurality of impurity resistors made of impurity-doped polysilicon respectively connected to the signal electrode and the scanning electrode outside the display region, and a terminating wire commonly connecting the plurality of impurity resistors; Cutting the transparent substrate at a portion of the liquid crystal display device. 4. A polysilicon thin film transistor is formed outside the display region at the same time as the formation of the polysilicon thin film transistor in the display region, and a driving circuit for driving the thin film transistor in the display region is formed by the polysilicon thin film transistors. The method for manufacturing a liquid crystal display device according to claim 3, wherein: 5. A pixel is defined by forming a plurality of signal electrodes and scanning electrodes passing through a display area of a transparent substrate, and forming a polysilicon thin film transistor and a pixel electrode for each pixel.
A plurality of first impurity resistors made of impurity-doped polysilicon respectively connected to the signal electrode and the scan electrode outside the display region, an inspection circuit connected to the plurality of impurity resistors, a termination wiring, A second layer made of impurity-doped polysilicon for connecting between a circuit and the terminal wiring;
A liquid crystal display device comprising: a step of forming an impurity resistor of the type described above; a step of driving the inspection circuit to perform an inspection; and a step of cutting the transparent substrate at a portion of the first impurity resistor. Manufacturing method. 6. A polysilicon thin film transistor is formed outside the display region simultaneously with the formation of the polysilicon thin film transistor in the display region, and a driving circuit for driving the thin film transistor in the display region is formed by the polysilicon thin film transistor. A method for manufacturing a liquid crystal display device according to claim 5, wherein: