JP2000002856A - 情報処理装置 - Google Patents
情報処理装置Info
- Publication number
- JP2000002856A JP2000002856A JP11042855A JP4285599A JP2000002856A JP 2000002856 A JP2000002856 A JP 2000002856A JP 11042855 A JP11042855 A JP 11042855A JP 4285599 A JP4285599 A JP 4285599A JP 2000002856 A JP2000002856 A JP 2000002856A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display
- information processing
- display device
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000010365 information processing Effects 0.000 claims abstract description 94
- 239000004973 liquid crystal related substance Substances 0.000 claims description 124
- 239000013078 crystal Substances 0.000 claims description 72
- 239000010409 thin film Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 6
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 68
- 239000000758 substrate Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 19
- 230000007547 defect Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 239000003054 catalyst Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 239000010407 anodic oxide Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
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- 238000010894 electron beam technology Methods 0.000 description 8
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- 210000003128 head Anatomy 0.000 description 7
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- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 238000005247 gettering Methods 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- 229920001721 polyimide Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
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- 238000004891 communication Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
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- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- -1 typically Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 206010048865 Hypoacusis Diseases 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006285 Si—Ni—Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 206010047531 Visual acuity reduced Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 208000003464 asthenopia Diseases 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical group 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 208000013057 hereditary mucoepithelial dysplasia Diseases 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 201000003152 motion sickness Diseases 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Controls And Circuits For Display Device (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11042855A JP2000002856A (ja) | 1998-02-25 | 1999-02-22 | 情報処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6044198 | 1998-02-25 | ||
| JP10-60441 | 1998-02-25 | ||
| JP11042855A JP2000002856A (ja) | 1998-02-25 | 1999-02-22 | 情報処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000002856A true JP2000002856A (ja) | 2000-01-07 |
| JP2000002856A5 JP2000002856A5 (https=) | 2006-04-13 |
Family
ID=26382597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11042855A Withdrawn JP2000002856A (ja) | 1998-02-25 | 1999-02-22 | 情報処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000002856A (https=) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003337963A (ja) * | 2002-05-17 | 2003-11-28 | Seiko Epson Corp | 画像処理装置および画像処理方法、ならびに、画像処理プログラムおよびその記録媒体 |
| JP2010139711A (ja) * | 2008-12-11 | 2010-06-24 | Brother Ind Ltd | ヘッドマウントディスプレイ |
| JP2016040623A (ja) * | 2000-01-17 | 2016-03-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018097141A (ja) * | 2016-12-13 | 2018-06-21 | 富士ゼロックス株式会社 | 頭部装着型表示装置、仮想物体表示システム |
| KR101892238B1 (ko) * | 2015-02-03 | 2018-09-28 | (주)이노시뮬레이션 | Hmd를 이용한 시뮬레이션 시스템 및 그 제어방법 |
| CN109616059A (zh) * | 2017-10-04 | 2019-04-12 | 夏普株式会社 | 显示驱动装置及显示装置 |
| KR20220158772A (ko) | 2020-03-27 | 2022-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| KR20230112706A (ko) | 2020-12-06 | 2023-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 보정 시스템 |
| KR20230113765A (ko) | 2020-12-11 | 2023-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 시스템의 동작 방법 |
| KR20230128008A (ko) | 2020-12-11 | 2023-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 시스템 |
| KR20230132505A (ko) | 2021-01-28 | 2023-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| KR20230135639A (ko) | 2021-02-05 | 2023-09-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 장치 |
| KR20240018520A (ko) | 2021-06-08 | 2024-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 시스템 |
| US11921919B2 (en) | 2021-02-19 | 2024-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| KR20240033247A (ko) | 2021-07-16 | 2024-03-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 장치 |
| KR20240056838A (ko) | 2021-09-22 | 2024-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 및 통신 시스템 |
| KR20240088919A (ko) | 2021-10-08 | 2024-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 장치 |
| KR20240090352A (ko) | 2021-10-15 | 2024-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 상기 표시 장치를 가지는 전자 기기 |
| KR20240104132A (ko) | 2021-11-12 | 2024-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 장치 |
| KR20240121821A (ko) | 2021-12-17 | 2024-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
| KR20240122458A (ko) | 2021-12-08 | 2024-08-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 장치 |
| KR20240129163A (ko) | 2021-12-24 | 2024-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
| KR20240149902A (ko) | 2022-02-04 | 2024-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
| KR20250127052A (ko) | 2022-12-28 | 2025-08-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| KR20250155511A (ko) | 2023-02-20 | 2025-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 시스템 |
-
1999
- 1999-02-22 JP JP11042855A patent/JP2000002856A/ja not_active Withdrawn
Cited By (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10522076B2 (en) | 2000-01-17 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Display system and electrical appliance |
| JP2016040623A (ja) * | 2000-01-17 | 2016-03-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2017033007A (ja) * | 2000-01-17 | 2017-02-09 | 株式会社半導体エネルギー研究所 | 電子機器 |
| US10467961B2 (en) | 2000-01-17 | 2019-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display system and electrical appliance |
| JP2003337963A (ja) * | 2002-05-17 | 2003-11-28 | Seiko Epson Corp | 画像処理装置および画像処理方法、ならびに、画像処理プログラムおよびその記録媒体 |
| JP2010139711A (ja) * | 2008-12-11 | 2010-06-24 | Brother Ind Ltd | ヘッドマウントディスプレイ |
| KR101892238B1 (ko) * | 2015-02-03 | 2018-09-28 | (주)이노시뮬레이션 | Hmd를 이용한 시뮬레이션 시스템 및 그 제어방법 |
| JP2018097141A (ja) * | 2016-12-13 | 2018-06-21 | 富士ゼロックス株式会社 | 頭部装着型表示装置、仮想物体表示システム |
| CN109616059B (zh) * | 2017-10-04 | 2021-05-28 | 夏普株式会社 | 显示驱动装置及显示装置 |
| US10564421B2 (en) | 2017-10-04 | 2020-02-18 | Sharp Kabushiki Kaisha | Display driving device and display apparatus |
| CN109616059A (zh) * | 2017-10-04 | 2019-04-12 | 夏普株式会社 | 显示驱动装置及显示装置 |
| KR20220158772A (ko) | 2020-03-27 | 2022-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| US11948515B2 (en) | 2020-03-27 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR20230112706A (ko) | 2020-12-06 | 2023-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 보정 시스템 |
| US12243482B2 (en) | 2020-12-06 | 2025-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display correction system |
| KR20230113765A (ko) | 2020-12-11 | 2023-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 시스템의 동작 방법 |
| KR20230128008A (ko) | 2020-12-11 | 2023-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 시스템 |
| US12229461B2 (en) | 2020-12-11 | 2025-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating display system using two display devices |
| US12230172B2 (en) | 2021-01-28 | 2025-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
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