ITRM950357A0 - Supporto per corpi portanti in un dispositivo per la deposizione di materiale di semiconduttori. - Google Patents

Supporto per corpi portanti in un dispositivo per la deposizione di materiale di semiconduttori.

Info

Publication number
ITRM950357A0
ITRM950357A0 ITRM950357A ITRM950357A ITRM950357A0 IT RM950357 A0 ITRM950357 A0 IT RM950357A0 IT RM950357 A ITRM950357 A IT RM950357A IT RM950357 A ITRM950357 A IT RM950357A IT RM950357 A0 ITRM950357 A0 IT RM950357A0
Authority
IT
Italy
Prior art keywords
deposition
support
semiconductor material
carrying bodies
bodies
Prior art date
Application number
ITRM950357A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of ITRM950357A0 publication Critical patent/ITRM950357A0/it
Publication of ITRM950357A1 publication Critical patent/ITRM950357A1/it
Application granted granted Critical
Publication of IT1278082B1 publication Critical patent/IT1278082B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT95RM000357A 1994-07-14 1995-05-26 Supporto per corpi portanti in un dispositivo per la deposizione di materiale di semiconduttori. IT1278082B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4424929A DE4424929C2 (de) 1994-07-14 1994-07-14 Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial

Publications (3)

Publication Number Publication Date
ITRM950357A0 true ITRM950357A0 (it) 1995-05-26
ITRM950357A1 ITRM950357A1 (it) 1996-11-26
IT1278082B1 IT1278082B1 (it) 1997-11-17

Family

ID=6523188

Family Applications (1)

Application Number Title Priority Date Filing Date
IT95RM000357A IT1278082B1 (it) 1994-07-14 1995-05-26 Supporto per corpi portanti in un dispositivo per la deposizione di materiale di semiconduttori.

Country Status (4)

Country Link
US (1) US5593465A (it)
JP (1) JP2805457B2 (it)
DE (1) DE4424929C2 (it)
IT (1) IT1278082B1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0775808B1 (de) * 1995-11-23 2001-08-16 Scambia Industrial Developments Aktiengesellschaft Verfahren zur Herstellung eines Katalysatorkörpers für die katalytische Behandlung von Gas, Katalysatorkörper und Katalysator
DE10101040A1 (de) 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP4331901B2 (ja) * 2001-03-30 2009-09-16 日本碍子株式会社 セラミックサセプターの支持構造
JP2006240934A (ja) * 2005-03-04 2006-09-14 Tokuyama Corp 多結晶シリコンの製造装置
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP2008260973A (ja) * 2007-04-10 2008-10-30 Shinko Seiki Co Ltd 成膜装置用の被処理物の支持具
JP5266817B2 (ja) * 2008-03-17 2013-08-21 三菱マテリアル株式会社 多結晶シリコン製造装置
US8784565B2 (en) * 2008-04-14 2014-07-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
AU2009236679B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
JP5444860B2 (ja) * 2008-06-24 2014-03-19 三菱マテリアル株式会社 多結晶シリコン製造装置
JP5338574B2 (ja) * 2008-09-09 2013-11-13 三菱マテリアル株式会社 多結晶シリコン製造装置
DE102009044991A1 (de) 2009-09-24 2011-03-31 Wacker Chemie Ag Stabförmiges Polysilicium mit verbesserter Brucheigenschaft
JP5415914B2 (ja) 2009-11-26 2014-02-12 信越化学工業株式会社 炭素電極および多結晶シリコン棒の製造装置
AU2013251286B2 (en) * 2009-11-26 2015-03-19 Shin-Etsu Chemical Co., Ltd. Carbon electrode and apparatus for manufacturing polycrystalline silicon rod
DE102010003068A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
DE202012100839U1 (de) * 2012-03-08 2012-06-22 Silcontec Gmbh Laborreaktor
JP7345441B2 (ja) 2020-07-02 2023-09-15 信越化学工業株式会社 多結晶シリコン製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2618293A1 (de) * 1976-04-27 1977-11-17 Papst Motoren Kg Kollektorloser gleichstrommotor
DE2652218A1 (de) * 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
DE2854707C2 (de) * 1978-12-18 1985-08-14 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens

Also Published As

Publication number Publication date
DE4424929A1 (de) 1996-01-18
JPH0845847A (ja) 1996-02-16
IT1278082B1 (it) 1997-11-17
DE4424929C2 (de) 1997-02-13
JP2805457B2 (ja) 1998-09-30
US5593465A (en) 1997-01-14
ITRM950357A1 (it) 1996-11-26

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Legal Events

Date Code Title Description
0001 Granted