ITRM20020148A1 - Programmazione di memorie flash. - Google Patents

Programmazione di memorie flash.

Info

Publication number
ITRM20020148A1
ITRM20020148A1 IT2002RM000148A ITRM20020148A ITRM20020148A1 IT RM20020148 A1 ITRM20020148 A1 IT RM20020148A1 IT 2002RM000148 A IT2002RM000148 A IT 2002RM000148A IT RM20020148 A ITRM20020148 A IT RM20020148A IT RM20020148 A1 ITRM20020148 A1 IT RM20020148A1
Authority
IT
Italy
Prior art keywords
programming
flash memories
memories
flash
Prior art date
Application number
IT2002RM000148A
Other languages
English (en)
Inventor
Pasquale Pistilli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2002RM000148A priority Critical patent/ITRM20020148A1/it
Publication of ITRM20020148A0 publication Critical patent/ITRM20020148A0/it
Priority to US10/341,314 priority patent/US7062599B2/en
Publication of ITRM20020148A1 publication Critical patent/ITRM20020148A1/it
Priority to US11/369,348 priority patent/US7162570B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
IT2002RM000148A 2002-03-18 2002-03-18 Programmazione di memorie flash. ITRM20020148A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT2002RM000148A ITRM20020148A1 (it) 2002-03-18 2002-03-18 Programmazione di memorie flash.
US10/341,314 US7062599B2 (en) 2002-03-18 2003-01-13 Flash memory programming
US11/369,348 US7162570B2 (en) 2002-03-18 2006-03-07 Flash memory programming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002RM000148A ITRM20020148A1 (it) 2002-03-18 2002-03-18 Programmazione di memorie flash.

Publications (2)

Publication Number Publication Date
ITRM20020148A0 ITRM20020148A0 (it) 2002-03-18
ITRM20020148A1 true ITRM20020148A1 (it) 2003-09-18

Family

ID=11456194

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002RM000148A ITRM20020148A1 (it) 2002-03-18 2002-03-18 Programmazione di memorie flash.

Country Status (2)

Country Link
US (2) US7062599B2 (it)
IT (1) ITRM20020148A1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US7403425B2 (en) * 2006-03-07 2008-07-22 Micron Technology, Inc. Programming a flash memory device
TW200828320A (en) * 2006-12-28 2008-07-01 Genesys Logic Inc Method for performing static wear leveling on flash memory
KR100871700B1 (ko) * 2007-02-13 2008-12-08 삼성전자주식회사 불휘발성 메모리 장치에서 전하 손실에 기인한 오류 데이터정정 방법
CN101833995B (zh) * 2009-03-11 2017-06-20 深圳市朗科科技股份有限公司 闪存介质的编程方法
US20150095728A1 (en) * 2013-09-30 2015-04-02 United Microelectronics Corp. Testing method for reducing number of overkills by repeatedly writing data to addresses in a non-volatile memory
US9472279B2 (en) * 2015-01-20 2016-10-18 Taiwan Semiconductor Manufacturing Company Limited Memory cell dynamic grouping using write detection
US9898059B2 (en) 2016-03-13 2018-02-20 Apple Inc. Dynamic control of power consumption based on memory device activity

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69223099T2 (de) * 1991-08-09 1998-06-10 Toshiba Kawasaki Kk Aufzeichnungsgerät für eine Speicherkarte
EP0563997A1 (en) * 1992-04-02 1993-10-06 Kabushiki Kaisha Toshiba Memory card apparatus
US5539696A (en) 1994-01-31 1996-07-23 Patel; Vipul C. Method and apparatus for writing data in a synchronous memory having column independent sections and a method and apparatus for performing write mask operations
DE69514802T2 (de) * 1995-09-29 2000-05-31 St Microelectronics Srl Verfahren zum Parallel-Programmieren von Speicherwörtern und entsprechende Schaltung
KR100237019B1 (ko) * 1996-12-28 2000-03-02 김영환 플래쉬 메모리셀의 프리-프로그램 방법
US20010011318A1 (en) * 1997-02-27 2001-08-02 Vishram P. Dalvi Status indicators for flash memory
US6085282A (en) * 1997-09-24 2000-07-04 Motorola, Inc. Method and apparatus for distinguishing register reads from memory reads in a flash memory
FR2803080A1 (fr) * 1999-12-22 2001-06-29 St Microelectronics Sa Memoire flash programmable page par page
US6418059B1 (en) * 2000-06-26 2002-07-09 Intel Corporation Method and apparatus for non-volatile memory bit sequence program controller

Also Published As

Publication number Publication date
ITRM20020148A0 (it) 2002-03-18
US7062599B2 (en) 2006-06-13
US20060149897A1 (en) 2006-07-06
US7162570B2 (en) 2007-01-09
US20030177302A1 (en) 2003-09-18

Similar Documents

Publication Publication Date Title
DE602004007173D1 (de) Nichtflüchtiger Halbleiterspeicher
DE60314068D1 (de) Nichtflüchtiger Halbleiterspeicher
ITRM20010525A0 (it) Memoria eeprom flash cancellabile per righe.
DE602004020504D1 (de) Speichersteuerung
DE60300777D1 (de) Nichtflüchtiger redundanzadressen-speicher
GB2430291B (en) Erase algorithum multi-level bit flash memory
DE602004028190D1 (de) Speicheranordnung
DE60213560D1 (de) Halbleiterspeicher
FR2858101B1 (fr) Systeme de memoire flash
ITMI20022240A1 (it) Architettura di memoria flash con cancellazione di modo
DE60332081D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
GB2401460B (en) Partial page programming of multi level flash semiconductor memory
EP1714294A4 (en) NON-VOLATILE MEMORY
DE60210416D1 (de) Speicherkarte
DE60217463D1 (de) Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle
ITRM20010516A0 (it) Architettura a schiera di memorie flash.
DE60317381D1 (de) Halbleiterspeicher
DE602004004017D1 (de) Nichtflüchtiger Flash-Speicher
DE60336787D1 (de) Halbleiterspeicher
DE60334276D1 (de) Programmierbarer Speichertransistor
ITRM20020148A1 (it) Programmazione di memorie flash.
DE60320975D1 (de) Hydrospeicher
DE502005005969D1 (de) Nicht-flüchtiges speicherelement
ITMI20042071A1 (it) Metodo di programmazione di memorie multilivello e relativo circuito
ITRM20020493A0 (it) Memoria cam non volatile di tipo and.