ITMI20020306A0 - Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso - Google Patents

Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso

Info

Publication number
ITMI20020306A0
ITMI20020306A0 IT2002MI000306A ITMI20020306A ITMI20020306A0 IT MI20020306 A0 ITMI20020306 A0 IT MI20020306A0 IT 2002MI000306 A IT2002MI000306 A IT 2002MI000306A IT MI20020306 A ITMI20020306 A IT MI20020306A IT MI20020306 A0 ITMI20020306 A0 IT MI20020306A0
Authority
IT
Italy
Prior art keywords
retentations
same
epitaxial reactor
susceptor
susceptor equipped
Prior art date
Application number
IT2002MI000306A
Other languages
English (en)
Inventor
Vincenzo Ogliari
Franco Preti
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT2002MI000306A priority Critical patent/ITMI20020306A1/it
Publication of ITMI20020306A0 publication Critical patent/ITMI20020306A0/it
Priority to PCT/EP2003/001305 priority patent/WO2003069029A1/en
Priority to EP03706472A priority patent/EP1476591A2/en
Priority to AU2003208826A priority patent/AU2003208826A1/en
Publication of ITMI20020306A1 publication Critical patent/ITMI20020306A1/it
Priority to US10/916,780 priority patent/US20050051099A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT2002MI000306A 2002-02-15 2002-02-15 Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso ITMI20020306A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT2002MI000306A ITMI20020306A1 (it) 2002-02-15 2002-02-15 Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
PCT/EP2003/001305 WO2003069029A1 (en) 2002-02-15 2003-02-10 A susceptor provided with indentations and an epitaxial reactor which uses the same
EP03706472A EP1476591A2 (en) 2002-02-15 2003-02-10 A susceptor provided with indentations and an epitaxial reactor which uses the same
AU2003208826A AU2003208826A1 (en) 2002-02-15 2003-02-10 A susceptor provided with indentations and an epitaxial reactor which uses the same
US10/916,780 US20050051099A1 (en) 2002-02-15 2004-08-12 Susceptor provided with indentations and an epitaxial reactor which uses the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2002MI000306A ITMI20020306A1 (it) 2002-02-15 2002-02-15 Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso

Publications (2)

Publication Number Publication Date
ITMI20020306A0 true ITMI20020306A0 (it) 2002-02-15
ITMI20020306A1 ITMI20020306A1 (it) 2003-08-18

Family

ID=11449263

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2002MI000306A ITMI20020306A1 (it) 2002-02-15 2002-02-15 Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso

Country Status (5)

Country Link
US (1) US20050051099A1 (it)
EP (1) EP1476591A2 (it)
AU (1) AU2003208826A1 (it)
IT (1) ITMI20020306A1 (it)
WO (1) WO2003069029A1 (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7488922B2 (en) 2002-12-10 2009-02-10 E.T.C. Epitaxial Technology Center Srl Susceptor system
JP2006513559A (ja) 2002-12-10 2006-04-20 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル サセプタ・システム
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US20060275104A1 (en) * 2004-06-09 2006-12-07 E.T.C. Epitaxial Technology Center S R L Support system for treatment apparatuses
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
WO2010024943A2 (en) * 2008-08-29 2010-03-04 Veeco Instruments Inc. Wafer carrier with varying thermal resistance
US9637822B2 (en) * 2009-10-09 2017-05-02 Cree, Inc. Multi-rotation epitaxial growth apparatus and reactors incorporating same
US9570328B2 (en) 2010-06-30 2017-02-14 Applied Materials, Inc. Substrate support for use with multi-zonal heating sources
NL2006146C2 (en) 2011-02-04 2012-08-07 Xycarb Ceramics B V A method of processing substrate holder material as well as a substrate holder processed by such a method.
JP5477314B2 (ja) * 2011-03-04 2014-04-23 信越半導体株式会社 サセプタ及びこれを用いたエピタキシャルウェーハの製造方法
DE102011088147A1 (de) 2011-12-09 2013-06-13 Evonik Industries Ag Verbundkörper, umfassend ein Verbundmaterial
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
JP6189164B2 (ja) * 2013-09-30 2017-08-30 住友電工デバイス・イノベーション株式会社 成長装置
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
DE102014109327A1 (de) * 2014-07-03 2016-01-07 Aixtron Se Beschichtetes flaches scheibenförmiges Bauteil in einem CVD-Reaktor
JP6735549B2 (ja) * 2015-11-04 2020-08-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及びリング状部材
CN110520553A (zh) * 2017-02-28 2019-11-29 西格里碳素欧洲公司 基板-载体结构
DE102017105947A1 (de) 2017-03-20 2018-09-20 Aixtron Se Suszeptor für einen CVD-Reaktor
JP7018744B2 (ja) * 2017-11-24 2022-02-14 昭和電工株式会社 ＳｉＣエピタキシャル成長装置
USD860146S1 (en) 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
DE102020120449A1 (de) * 2020-08-03 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wafer-carrier und system für eine epitaxievorrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1924997A1 (de) * 1969-05-16 1970-11-19 Siemens Ag Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4858557A (en) * 1984-07-19 1989-08-22 L.P.E. Spa Epitaxial reactors
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
JPH0677140A (ja) * 1992-05-14 1994-03-18 Mitsubishi Electric Corp 気相結晶成長装置
IT1271233B (it) * 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
JP2001010894A (ja) * 1999-06-24 2001-01-16 Mitsubishi Materials Silicon Corp 結晶成長用サセプタとこれを用いた結晶成長装置、およびエピタキシャル・ウェーハとその製造方法

Also Published As

Publication number Publication date
AU2003208826A1 (en) 2003-09-04
ITMI20020306A1 (it) 2003-08-18
WO2003069029A8 (en) 2004-08-26
US20050051099A1 (en) 2005-03-10
WO2003069029A1 (en) 2003-08-21
EP1476591A2 (en) 2004-11-17

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