ITFI940194A0 - Sorgente di plasma a radiofrequenza - Google Patents
Sorgente di plasma a radiofrequenzaInfo
- Publication number
- ITFI940194A0 ITFI940194A0 ITFI940194A ITFI940194A ITFI940194A0 IT FI940194 A0 ITFI940194 A0 IT FI940194A0 IT FI940194 A ITFI940194 A IT FI940194A IT FI940194 A ITFI940194 A IT FI940194A IT FI940194 A0 ITFI940194 A0 IT FI940194A0
- Authority
- IT
- Italy
- Prior art keywords
- radio frequency
- plasma source
- frequency plasma
- source
- radio
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITFI940194A IT1269413B (it) | 1994-10-21 | 1994-10-21 | Sorgente di plasma a radiofrequenza |
DE69518050T DE69518050T2 (de) | 1994-10-21 | 1995-10-12 | Radiofrequenzplasmaquelle |
EP95830425A EP0710056B1 (en) | 1994-10-21 | 1995-10-12 | Radio-frequency plasma source |
US08/544,018 US5592055A (en) | 1994-10-21 | 1995-10-17 | Radio-frequency plasma source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITFI940194A IT1269413B (it) | 1994-10-21 | 1994-10-21 | Sorgente di plasma a radiofrequenza |
Publications (3)
Publication Number | Publication Date |
---|---|
ITFI940194A0 true ITFI940194A0 (it) | 1994-10-21 |
ITFI940194A1 ITFI940194A1 (it) | 1996-04-21 |
IT1269413B IT1269413B (it) | 1997-04-01 |
Family
ID=11351008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITFI940194A IT1269413B (it) | 1994-10-21 | 1994-10-21 | Sorgente di plasma a radiofrequenza |
Country Status (4)
Country | Link |
---|---|
US (1) | US5592055A (it) |
EP (1) | EP0710056B1 (it) |
DE (1) | DE69518050T2 (it) |
IT (1) | IT1269413B (it) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
US6293090B1 (en) * | 1998-07-22 | 2001-09-25 | New England Space Works, Inc. | More efficient RF plasma electric thruster |
GB2342927B (en) | 1998-10-23 | 2003-05-07 | Trikon Holdings Ltd | Apparatus and methods for sputtering |
US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
US6528751B1 (en) | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US7196283B2 (en) | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
US7910013B2 (en) | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
US7470626B2 (en) * | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
US7795153B2 (en) * | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
US7901952B2 (en) * | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
US7452824B2 (en) * | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
DE10331926A1 (de) * | 2003-07-15 | 2005-02-24 | Leybold Optics Gmbh | Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche |
DE10358505B4 (de) * | 2003-12-13 | 2007-10-11 | Roth & Rau Ag | Plasmaquelle zur Erzeugung eines induktiv gekoppelten Plasmas |
US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
US9228570B2 (en) * | 2010-02-16 | 2016-01-05 | University Of Florida Research Foundation, Inc. | Method and apparatus for small satellite propulsion |
AU2012253236B2 (en) * | 2011-05-12 | 2015-01-29 | Roderick William Boswell | Plasma micro-thruster |
US9820369B2 (en) | 2013-02-25 | 2017-11-14 | University Of Florida Research Foundation, Incorporated | Method and apparatus for providing high control authority atmospheric plasma |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5779621A (en) | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
JPH0616384B2 (ja) * | 1984-06-11 | 1994-03-02 | 日本電信電話株式会社 | マイクロ波イオン源 |
US4870245A (en) * | 1985-04-01 | 1989-09-26 | Motorola, Inc. | Plasma enhanced thermal treatment apparatus |
JPS6276137A (ja) * | 1985-09-30 | 1987-04-08 | Hitachi Ltd | イオン源 |
JPH0654644B2 (ja) | 1985-10-04 | 1994-07-20 | 株式会社日立製作所 | イオン源 |
US4714831A (en) | 1986-05-01 | 1987-12-22 | International Business Machines | Spherical retarding grid analyzer |
KR900003310B1 (ko) | 1986-05-27 | 1990-05-14 | 리가가구 겡큐소 | 이온 발생 장치 |
EP0339554A3 (de) | 1988-04-26 | 1989-12-20 | Hauzer Holding B.V. | Hochfrequenz-Ionenstrahlquelle |
JPH01289251A (ja) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスターの製造方法 |
US5107170A (en) * | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
US5075594A (en) | 1989-09-13 | 1991-12-24 | Hughes Aircraft Company | Plasma switch with hollow, thermionic cathode |
US5081398A (en) * | 1989-10-20 | 1992-01-14 | Board Of Trustees Operating Michigan State University | Resonant radio frequency wave coupler apparatus using higher modes |
JPH04901A (ja) * | 1990-04-18 | 1992-01-06 | Mitsubishi Electric Corp | プラズマ装置の高周波給電方法及び装置 |
IT1246682B (it) | 1991-03-04 | 1994-11-24 | Proel Tecnologie Spa | Dispositivo a catodo cavo non riscaldato per la generazione dinamica di plasma |
IT1246684B (it) | 1991-03-07 | 1994-11-24 | Proel Tecnologie Spa | Propulsore ionico a risonanza ciclotronica. |
-
1994
- 1994-10-21 IT ITFI940194A patent/IT1269413B/it active IP Right Grant
-
1995
- 1995-10-12 DE DE69518050T patent/DE69518050T2/de not_active Expired - Lifetime
- 1995-10-12 EP EP95830425A patent/EP0710056B1/en not_active Expired - Lifetime
- 1995-10-17 US US08/544,018 patent/US5592055A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITFI940194A1 (it) | 1996-04-21 |
EP0710056A1 (en) | 1996-05-01 |
DE69518050D1 (de) | 2000-08-24 |
US5592055A (en) | 1997-01-07 |
EP0710056B1 (en) | 2000-07-19 |
DE69518050T2 (de) | 2001-03-22 |
IT1269413B (it) | 1997-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19981029 |