IT993934B - Procedimento e dispositivo per la fusione a zona progressiva senza orogiuolo di una bacchetta di materiale semiconduttore - Google Patents

Procedimento e dispositivo per la fusione a zona progressiva senza orogiuolo di una bacchetta di materiale semiconduttore

Info

Publication number
IT993934B
IT993934B IT29306/73A IT2930673A IT993934B IT 993934 B IT993934 B IT 993934B IT 29306/73 A IT29306/73 A IT 29306/73A IT 2930673 A IT2930673 A IT 2930673A IT 993934 B IT993934 B IT 993934B
Authority
IT
Italy
Prior art keywords
orogiuolo
wand
semiconductor material
zone melting
progressive zone
Prior art date
Application number
IT29306/73A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247651 external-priority patent/DE2247651C3/de
Priority claimed from DE19732332968 external-priority patent/DE2332968C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT993934B publication Critical patent/IT993934B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT29306/73A 1972-09-28 1973-09-25 Procedimento e dispositivo per la fusione a zona progressiva senza orogiuolo di una bacchetta di materiale semiconduttore IT993934B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19722247651 DE2247651C3 (de) 1972-09-28 1972-09-28 Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes
DE19732332968 DE2332968C3 (de) 1973-06-28 1973-06-28 Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes

Publications (1)

Publication Number Publication Date
IT993934B true IT993934B (it) 1975-09-30

Family

ID=25763898

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29306/73A IT993934B (it) 1972-09-28 1973-09-25 Procedimento e dispositivo per la fusione a zona progressiva senza orogiuolo di una bacchetta di materiale semiconduttore

Country Status (7)

Country Link
US (1) US3814827A (xx)
DD (1) DD110182A5 (xx)
DK (1) DK141784C (xx)
FR (1) FR2201132B1 (xx)
GB (1) GB1451622A (xx)
HK (1) HK26477A (xx)
IT (1) IT993934B (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2731250C2 (de) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Regelung des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Halbleiterstabes
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
US4845332A (en) * 1987-09-16 1989-07-04 National Steel Corp. Galvanneal induction furnace temperature control system
JPH0651599B2 (ja) * 1987-12-05 1994-07-06 信越半導体株式会社 浮遊帯域制御方法
SE523237C2 (sv) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Anordning för uppvärmning med hjälp av induktion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (xx) * 1962-04-27

Also Published As

Publication number Publication date
FR2201132B1 (xx) 1980-04-30
DK141784B (da) 1980-06-16
GB1451622A (en) 1976-10-06
DD110182A5 (xx) 1974-12-12
DK141784C (da) 1980-11-03
FR2201132A1 (xx) 1974-04-26
US3814827A (en) 1974-06-04
HK26477A (en) 1977-06-10

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