GB1451622A - Non-crucible zone melting oflsemiconductor rods - Google Patents

Non-crucible zone melting oflsemiconductor rods

Info

Publication number
GB1451622A
GB1451622A GB4525573A GB4525573A GB1451622A GB 1451622 A GB1451622 A GB 1451622A GB 4525573 A GB4525573 A GB 4525573A GB 4525573 A GB4525573 A GB 4525573A GB 1451622 A GB1451622 A GB 1451622A
Authority
GB
United Kingdom
Prior art keywords
zone
melt
melting
sept
modify
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4525573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247651 external-priority patent/DE2247651C3/en
Priority claimed from DE19732332968 external-priority patent/DE2332968C3/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1451622A publication Critical patent/GB1451622A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Abstract

1451622 Automatically controlled zone-melting SIEMENS AG 27 Sept 1973 [28 Sept 1972 28 June 1973] 45255/73 Heading BIS [Also in Division G3] In a process of non-crucible zone melting of a semi-conductor rod monitoring the melt zone by a television camera so that electrical pulses derived from the optical-electric imageconverter system from the recorded pictures are analysed to provide signal data about (a) volume of the melt. zone, (b) the solidification front, (c) distinctive angles at the melt front (d) the inflection point of the profile of the molten zone and (e) the diameter of the semiconductor rod at the solidification front and this data is used to modify the distance between the rod ends to delimit the melt zone and to modify the applied power. The modification is achieved by an intermediate volume control circuit which is subordinate to the actual diameter control circuit and any deviations from the distinctive angles from their setpoint values being used to correct the applied power. The specification includes a schematic drawing of an embodiment.
GB4525573A 1972-09-28 1973-09-27 Non-crucible zone melting oflsemiconductor rods Expired GB1451622A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19722247651 DE2247651C3 (en) 1972-09-28 1972-09-28 Device for controlling the diameter of a semiconductor rod
DE19732332968 DE2332968C3 (en) 1973-06-28 1973-06-28 Device for controlling the diameter of a semiconductor rod

Publications (1)

Publication Number Publication Date
GB1451622A true GB1451622A (en) 1976-10-06

Family

ID=25763898

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4525573A Expired GB1451622A (en) 1972-09-28 1973-09-27 Non-crucible zone melting oflsemiconductor rods

Country Status (7)

Country Link
US (1) US3814827A (en)
DD (1) DD110182A5 (en)
DK (1) DK141784C (en)
FR (1) FR2201132B1 (en)
GB (1) GB1451622A (en)
HK (1) HK26477A (en)
IT (1) IT993934B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2731250C2 (en) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Method for regulating the rod cross-section during crucible-free zone melting of a semiconductor rod
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
US4845332A (en) * 1987-09-16 1989-07-04 National Steel Corp. Galvanneal induction furnace temperature control system
JPH0651599B2 (en) * 1987-12-05 1994-07-06 信越半導体株式会社 Floating band control method
SE523237C2 (en) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Device for heating by means of induction

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE631568A (en) * 1962-04-27

Also Published As

Publication number Publication date
DK141784C (en) 1980-11-03
DK141784B (en) 1980-06-16
IT993934B (en) 1975-09-30
HK26477A (en) 1977-06-10
FR2201132B1 (en) 1980-04-30
US3814827A (en) 1974-06-04
DD110182A5 (en) 1974-12-12
FR2201132A1 (en) 1974-04-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee