IT982562B - Circuito per migliorare il funzio namento di una memoria a semicon duttore - Google Patents

Circuito per migliorare il funzio namento di una memoria a semicon duttore

Info

Publication number
IT982562B
IT982562B IT21817/73A IT2181773A IT982562B IT 982562 B IT982562 B IT 982562B IT 21817/73 A IT21817/73 A IT 21817/73A IT 2181773 A IT2181773 A IT 2181773A IT 982562 B IT982562 B IT 982562B
Authority
IT
Italy
Prior art keywords
functioning
improving
circuit
semicon ductor
ductor memory
Prior art date
Application number
IT21817/73A
Other languages
English (en)
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT982562B publication Critical patent/IT982562B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
IT21817/73A 1972-03-24 1973-03-16 Circuito per migliorare il funzio namento di una memoria a semicon duttore IT982562B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23774972A 1972-03-24 1972-03-24

Publications (1)

Publication Number Publication Date
IT982562B true IT982562B (it) 1974-10-21

Family

ID=22895003

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21817/73A IT982562B (it) 1972-03-24 1973-03-16 Circuito per migliorare il funzio namento di una memoria a semicon duttore

Country Status (10)

Country Link
US (1) US3714638A (US07714131-20100511-C00024.png)
JP (1) JPS545935B2 (US07714131-20100511-C00024.png)
AU (1) AU469739B2 (US07714131-20100511-C00024.png)
BE (1) BE797275A (US07714131-20100511-C00024.png)
CA (1) CA984969A (US07714131-20100511-C00024.png)
FR (1) FR2177912B1 (US07714131-20100511-C00024.png)
GB (1) GB1423909A (US07714131-20100511-C00024.png)
IT (1) IT982562B (US07714131-20100511-C00024.png)
NL (1) NL180892C (US07714131-20100511-C00024.png)
SE (1) SE378151B (US07714131-20100511-C00024.png)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors
GB1401262A (en) * 1973-02-23 1975-07-16 Ibm Data storage apparatus
JPS5088944A (US07714131-20100511-C00024.png) * 1973-12-10 1975-07-17
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US3971004A (en) * 1975-03-13 1976-07-20 Rca Corporation Memory cell with decoupled supply voltage while writing
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS51128236A (en) * 1975-04-30 1976-11-09 Nec Corp A memory circuit
JPS583186A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd スタティック半導体メモリ
JPS60140594A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd センス回路
JPS60247892A (ja) * 1984-05-22 1985-12-07 Nec Corp スタテイツク型半導体記憶回路
EP0218747B1 (en) * 1985-10-15 1991-05-08 International Business Machines Corporation Sense amplifier for amplifying signals on a biased line
US4768167A (en) * 1986-09-30 1988-08-30 International Business Machines Corporation High speed CMOS latch with alternate data storage and test functions
US4813023A (en) * 1986-10-21 1989-03-14 Brooktree Corporation System employing negative feedback for decreasing the response time of a cell

Also Published As

Publication number Publication date
NL180892C (nl) 1987-05-04
CA984969A (en) 1976-03-02
GB1423909A (en) 1976-02-04
FR2177912B1 (US07714131-20100511-C00024.png) 1980-04-30
BE797275A (fr) 1973-07-16
AU469739B2 (en) 1976-02-26
US3714638A (en) 1973-01-30
NL7304118A (US07714131-20100511-C00024.png) 1973-09-26
DE2314994A1 (de) 1973-11-29
JPS499147A (US07714131-20100511-C00024.png) 1974-01-26
JPS545935B2 (US07714131-20100511-C00024.png) 1979-03-23
FR2177912A1 (US07714131-20100511-C00024.png) 1973-11-09
DE2314994B2 (de) 1976-05-26
AU5314173A (en) 1974-09-12
SE378151B (US07714131-20100511-C00024.png) 1975-08-18

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