IT970159B - Procedimento per produrre defini ti rapporti rispettivamente di corrente e resistenza in gruppi di transistori a effetto di cam po mis - Google Patents

Procedimento per produrre defini ti rapporti rispettivamente di corrente e resistenza in gruppi di transistori a effetto di cam po mis

Info

Publication number
IT970159B
IT970159B IT31221/72A IT3122172A IT970159B IT 970159 B IT970159 B IT 970159B IT 31221/72 A IT31221/72 A IT 31221/72A IT 3122172 A IT3122172 A IT 3122172A IT 970159 B IT970159 B IT 970159B
Authority
IT
Italy
Prior art keywords
procedure
groups
resistance ratio
mis transistors
ratio respectively
Prior art date
Application number
IT31221/72A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT970159B publication Critical patent/IT970159B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
IT31221/72A 1971-11-03 1972-11-02 Procedimento per produrre defini ti rapporti rispettivamente di corrente e resistenza in gruppi di transistori a effetto di cam po mis IT970159B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2154654A DE2154654C3 (de) 1971-11-03 1971-11-03 Spannungsteilerschaltungsanordnung und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
IT970159B true IT970159B (it) 1974-04-10

Family

ID=5824100

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31221/72A IT970159B (it) 1971-11-03 1972-11-02 Procedimento per produrre defini ti rapporti rispettivamente di corrente e resistenza in gruppi di transistori a effetto di cam po mis

Country Status (5)

Country Link
DE (1) DE2154654C3 (en, 2012)
FR (1) FR2158385B1 (en, 2012)
GB (1) GB1351088A (en, 2012)
IT (1) IT970159B (en, 2012)
NL (1) NL7214912A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838310C2 (de) * 1978-09-01 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM- Signalen, in diesen entsprechende Analog- Signale, mit einem R-2R-Kettennetzwerk
DE3027456C2 (de) * 1980-07-19 1984-11-15 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054513A (en, 2012) * 1963-03-21 1900-01-01
FR1563879A (en, 2012) * 1968-02-09 1969-04-18
DE1921131C3 (de) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors

Also Published As

Publication number Publication date
NL7214912A (en, 2012) 1973-05-07
DE2154654A1 (de) 1973-05-10
GB1351088A (en) 1974-04-24
DE2154654C3 (de) 1982-04-15
FR2158385A1 (en, 2012) 1973-06-15
DE2154654B2 (de) 1980-01-10
FR2158385B1 (en, 2012) 1977-12-23

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